[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

EP2091083A3 - Siliziumkarbid-Halbleitervorrichtung mit tiefer Schicht - Google Patents

Siliziumkarbid-Halbleitervorrichtung mit tiefer Schicht Download PDF

Info

Publication number
EP2091083A3
EP2091083A3 EP20090001454 EP09001454A EP2091083A3 EP 2091083 A3 EP2091083 A3 EP 2091083A3 EP 20090001454 EP20090001454 EP 20090001454 EP 09001454 A EP09001454 A EP 09001454A EP 2091083 A3 EP2091083 A3 EP 2091083A3
Authority
EP
European Patent Office
Prior art keywords
layer
base region
trench
semiconductor device
silicon carbide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
EP20090001454
Other languages
English (en)
French (fr)
Other versions
EP2091083A2 (de
Inventor
Naohiro Suzuki
Eiichi Okuno
Hideo Matsuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2008031704A external-priority patent/JP4793390B2/ja
Priority claimed from JP2008322233A external-priority patent/JP2010147222A/ja
Priority claimed from JP2008322426A external-priority patent/JP4793437B2/ja
Application filed by Denso Corp filed Critical Denso Corp
Publication of EP2091083A2 publication Critical patent/EP2091083A2/de
Publication of EP2091083A3 publication Critical patent/EP2091083A3/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H01L29/0623—Buried supplementary region, e.g. buried guard ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063—Reduced surface field [RESURF] pn-junction structures
    • H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0856—Source regions
    • H01L29/086—Impurity concentration or distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H01L29/7828—Vertical transistors without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0638—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layer, e.g. with channel stopper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0661—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body specially adapted for altering the breakdown voltage by removing semiconductor material at, or in the neighbourhood of, a reverse biased junction, e.g. by bevelling, moat etching, depletion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873—Drain regions
    • H01L29/0878—Impurity concentration or distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
EP20090001454 2008-02-13 2009-02-03 Siliziumkarbid-Halbleitervorrichtung mit tiefer Schicht Ceased EP2091083A3 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008031704A JP4793390B2 (ja) 2008-02-13 2008-02-13 炭化珪素半導体装置およびその製造方法
JP2008322233A JP2010147222A (ja) 2008-12-18 2008-12-18 炭化珪素半導体装置およびその製造方法
JP2008322426A JP4793437B2 (ja) 2008-12-18 2008-12-18 炭化珪素半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
EP2091083A2 EP2091083A2 (de) 2009-08-19
EP2091083A3 true EP2091083A3 (de) 2009-10-14

Family

ID=40521732

Family Applications (1)

Application Number Title Priority Date Filing Date
EP20090001454 Ceased EP2091083A3 (de) 2008-02-13 2009-02-03 Siliziumkarbid-Halbleitervorrichtung mit tiefer Schicht

Country Status (3)

Country Link
US (1) US8193564B2 (de)
EP (1) EP2091083A3 (de)
KR (1) KR101015445B1 (de)

Families Citing this family (85)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2091083A3 (de) 2008-02-13 2009-10-14 Denso Corporation Siliziumkarbid-Halbleitervorrichtung mit tiefer Schicht
JP4640436B2 (ja) * 2008-04-14 2011-03-02 株式会社デンソー 炭化珪素半導体装置の製造方法
JP4640439B2 (ja) * 2008-04-17 2011-03-02 株式会社デンソー 炭化珪素半導体装置
JP2009283540A (ja) * 2008-05-20 2009-12-03 Denso Corp 炭化珪素半導体装置およびその製造方法
JPWO2010119789A1 (ja) * 2009-04-13 2012-10-22 ローム株式会社 半導体装置および半導体装置の製造方法
JP5170074B2 (ja) * 2009-12-25 2013-03-27 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP5659558B2 (ja) * 2010-05-20 2015-01-28 富士電機株式会社 超接合半導体装置の製造方法
JP5531787B2 (ja) * 2010-05-31 2014-06-25 株式会社デンソー 炭化珪素半導体装置およびその製造方法
US8981384B2 (en) 2010-08-03 2015-03-17 Sumitomo Electric Industries, Ltd. Semiconductor device and method for manufacturing same
TWI453913B (zh) 2010-12-02 2014-09-21 Sinopower Semiconductor Inc 溝渠式空乏型半導體元件及其製作方法
JP2012169385A (ja) 2011-02-11 2012-09-06 Denso Corp 炭化珪素半導体装置
JP2012169384A (ja) 2011-02-11 2012-09-06 Denso Corp 炭化珪素半導体装置およびその製造方法
JP5728992B2 (ja) * 2011-02-11 2015-06-03 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP5717661B2 (ja) * 2011-03-10 2015-05-13 株式会社東芝 半導体装置とその製造方法
JP5729331B2 (ja) * 2011-04-12 2015-06-03 株式会社デンソー 半導体装置の製造方法及び半導体装置
JP6006918B2 (ja) * 2011-06-06 2016-10-12 ルネサスエレクトロニクス株式会社 半導体装置、半導体装置の製造方法、及び電子装置
US8686439B2 (en) * 2011-06-27 2014-04-01 Panasonic Corporation Silicon carbide semiconductor element
JP5482745B2 (ja) 2011-08-10 2014-05-07 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP6290526B2 (ja) 2011-08-24 2018-03-07 ローム株式会社 半導体装置およびその製造方法
JP5699878B2 (ja) 2011-09-14 2015-04-15 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP2013069964A (ja) 2011-09-26 2013-04-18 Sumitomo Electric Ind Ltd 炭化珪素半導体装置
JP5742657B2 (ja) 2011-10-20 2015-07-01 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
US8759908B2 (en) * 2011-11-01 2014-06-24 Alpha And Omega Semiconductor Incorporated Two-dimensional shielded gate transistor device and method of manufacture
JP5764046B2 (ja) 2011-11-21 2015-08-12 住友電気工業株式会社 炭化珪素半導体装置の製造方法
WO2013080806A1 (ja) 2011-11-28 2013-06-06 富士電機株式会社 絶縁ゲート型半導体装置およびその製造方法
JP5995252B2 (ja) 2012-03-30 2016-09-21 富士電機株式会社 縦型高耐圧半導体装置および縦型高耐圧半導体装置の製造方法
JP5812029B2 (ja) * 2012-06-13 2015-11-11 株式会社デンソー 炭化珪素半導体装置およびその製造方法
CN104241341A (zh) * 2012-07-27 2014-12-24 俞国庆 一种高频低功耗的功率mos场效应管器件
JP6061181B2 (ja) * 2012-08-20 2017-01-18 ローム株式会社 半導体装置
WO2014061367A1 (ja) 2012-10-18 2014-04-24 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
JP5954140B2 (ja) * 2012-11-29 2016-07-20 住友電気工業株式会社 炭化珪素半導体装置
JP2014131008A (ja) 2012-11-29 2014-07-10 Fuji Electric Co Ltd ワイドバンドギャップ半導体装置
WO2014115253A1 (ja) 2013-01-23 2014-07-31 株式会社日立製作所 炭化珪素半導体装置及びその製造方法
JP2014175518A (ja) 2013-03-11 2014-09-22 Sumitomo Electric Ind Ltd 炭化珪素半導体装置
JP6077380B2 (ja) * 2013-04-24 2017-02-08 トヨタ自動車株式会社 半導体装置
JP6048317B2 (ja) 2013-06-05 2016-12-21 株式会社デンソー 炭化珪素半導体装置
US9748341B2 (en) * 2013-07-02 2017-08-29 General Electric Company Metal-oxide-semiconductor (MOS) devices with increased channel periphery
US9024328B2 (en) * 2013-07-02 2015-05-05 General Electric Company Metal-oxide-semiconductor (MOS) devices with increased channel periphery and methods of manufacture
JP6135364B2 (ja) * 2013-07-26 2017-05-31 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
WO2015015808A1 (ja) 2013-08-01 2015-02-05 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
US10211304B2 (en) 2013-12-04 2019-02-19 General Electric Company Semiconductor device having gate trench in JFET region
JP6231396B2 (ja) * 2014-02-10 2017-11-15 トヨタ自動車株式会社 半導体装置及び半導体装置の製造方法
JP6279927B2 (ja) 2014-02-17 2018-02-14 トヨタ自動車株式会社 絶縁ゲート型スイッチング素子を製造する方法及び絶縁ゲート型スイッチング素子
JP6237408B2 (ja) * 2014-03-28 2017-11-29 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
JP2016058679A (ja) 2014-09-12 2016-04-21 株式会社東芝 半導体装置およびその製造方法
JP6428489B2 (ja) * 2014-09-16 2018-11-28 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP6335089B2 (ja) * 2014-10-03 2018-05-30 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
WO2016059871A1 (ja) 2014-10-15 2016-04-21 富士電機株式会社 炭化珪素半導体装置およびその製造方法
JP6613610B2 (ja) 2015-05-14 2019-12-04 富士電機株式会社 半導体装置および半導体装置の製造方法
JP6409681B2 (ja) 2015-05-29 2018-10-24 株式会社デンソー 半導体装置およびその製造方法
WO2016199546A1 (ja) * 2015-06-09 2016-12-15 三菱電機株式会社 電力用半導体装置
JP6488204B2 (ja) * 2015-07-07 2019-03-20 株式会社豊田中央研究所 半導体装置の製造方法
CN106558616B (zh) 2015-09-24 2019-11-12 丰田合成株式会社 纵型场效应晶体管以及电力转换装置
DE102015224965A1 (de) 2015-12-11 2017-06-14 Robert Bosch Gmbh Flächenoptimierter Transistor mit Superlattice-Strukturen
JP6485382B2 (ja) * 2016-02-23 2019-03-20 株式会社デンソー 化合物半導体装置の製造方法および化合物半導体装置
KR101786738B1 (ko) * 2016-05-11 2017-10-18 현대오트론 주식회사 반도체 장치
JP6740759B2 (ja) 2016-07-05 2020-08-19 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP6696329B2 (ja) * 2016-07-05 2020-05-20 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP6696328B2 (ja) 2016-07-05 2020-05-20 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP6914624B2 (ja) 2016-07-05 2021-08-04 株式会社デンソー 炭化珪素半導体装置およびその製造方法
CN106024902B (zh) * 2016-07-22 2019-04-30 泰科天润半导体科技（北京）有限公司 具有高阻断特性的SiC基穿通型沟槽MOSFET的制作方法
CN107871664A (zh) * 2016-09-26 2018-04-03 北大方正集团有限公司 超结功率器件及其制造方法
JP6871562B2 (ja) 2016-11-16 2021-05-12 富士電機株式会社 炭化珪素半導体素子およびその製造方法
JP6673174B2 (ja) 2016-12-12 2020-03-25 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP6731571B2 (ja) 2016-12-27 2020-07-29 株式会社デンソー ＳｉＣ−ＭＯＳＦＥＴの製造方法
JP6673232B2 (ja) 2017-01-17 2020-03-25 株式会社デンソー 炭化珪素半導体装置
JP6828449B2 (ja) 2017-01-17 2021-02-10 株式会社デンソー 半導体装置およびその製造方法
CN110431669B (zh) 2017-03-07 2023-03-28 三菱电机株式会社 半导体装置以及电力变换装置
JP6729523B2 (ja) 2017-08-31 2020-07-22 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP6750590B2 (ja) * 2017-09-27 2020-09-02 株式会社デンソー 炭化珪素半導体装置
JP7067021B2 (ja) 2017-11-07 2022-05-16 富士電機株式会社 絶縁ゲート型半導体装置及びその製造方法
KR102335490B1 (ko) * 2017-12-14 2021-12-03 현대자동차 주식회사 반도체 소자 및 그 제조 방법
US11056586B2 (en) * 2018-09-28 2021-07-06 General Electric Company Techniques for fabricating charge balanced (CB) trench-metal-oxide-semiconductor field-effect transistor (MOSFET) devices
JP7180402B2 (ja) * 2019-01-21 2022-11-30 株式会社デンソー 半導体装置
DE102019210681A1 (de) * 2019-05-31 2020-12-03 Robert Bosch Gmbh Leistungstransistorzelle und Leistungstransistor
JP7288827B2 (ja) * 2019-09-06 2023-06-08 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP7278913B2 (ja) 2019-09-13 2023-05-22 株式会社東芝 半導体装置、半導体装置の製造方法、インバータ回路、駆動装置、車両、及び、昇降機
JP7425943B2 (ja) * 2019-12-12 2024-02-01 株式会社デンソー 炭化珪素半導体装置
JP7331783B2 (ja) * 2020-05-29 2023-08-23 豊田合成株式会社 半導体装置の製造方法
KR102379156B1 (ko) * 2020-09-03 2022-03-25 현대모비스 주식회사 전력 반도체 소자 및 그 제조 방법
JP2023545962A (ja) * 2020-10-14 2023-11-01 ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト トレンチＳｉＣパワー半導体デバイス
JP2022168904A (ja) * 2021-04-27 2022-11-09 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
CN113345965B (zh) * 2021-08-05 2021-11-09 浙江大学杭州国际科创中心 一种具有电场屏蔽结构的沟槽栅mosfet器件
CN114038908B (zh) * 2021-11-30 2023-05-26 电子科技大学 集成二极管的沟槽栅碳化硅mosfet器件及制造方法
JP2024042414A (ja) * 2022-09-15 2024-03-28 株式会社東芝 半導体装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5998268A (en) * 1996-09-30 1999-12-07 Denso Corporation Manufacturing method of semiconductor device with a groove
JP2001267570A (ja) * 2000-03-15 2001-09-28 Mitsubishi Electric Corp 半導体装置及び半導体装置製造方法
EP1168455A2 (de) * 2000-06-30 2002-01-02 Kabushiki Kaisha Toshiba Leistungshalbleiter-Schaltelement
US20020027237A1 (en) * 2000-09-05 2002-03-07 Fuji Electric Co., Ltd.. Semiconductor device
US20040135228A1 (en) * 2002-10-10 2004-07-15 Susumu Iwamoto Semiconductor element
US20050233539A1 (en) * 2004-04-14 2005-10-20 Yuuichi Takeuchi Method for manufacturing semiconductor device having trench in silicon carbide semiconductor substrate
US20070052015A1 (en) * 2005-09-07 2007-03-08 Nec Electronics Corporation Semiconductor device

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5322802A (en) 1993-01-25 1994-06-21 North Carolina State University At Raleigh Method of fabricating silicon carbide field effect transistor
JPH08264772A (ja) 1995-03-23 1996-10-11 Toyota Motor Corp 電界効果型半導体素子
US5637898A (en) 1995-12-22 1997-06-10 North Carolina State University Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance
US6133587A (en) 1996-01-23 2000-10-17 Denso Corporation Silicon carbide semiconductor device and process for manufacturing same
JP3471509B2 (ja) 1996-01-23 2003-12-02 株式会社デンソー 炭化珪素半導体装置
US6057558A (en) 1997-03-05 2000-05-02 Denson Corporation Silicon carbide semiconductor device and manufacturing method thereof
JP3719323B2 (ja) * 1997-03-05 2005-11-24 株式会社デンソー 炭化珪素半導体装置
US5969378A (en) 1997-06-12 1999-10-19 Cree Research, Inc. Latch-up free power UMOS-bipolar transistor
US6054752A (en) 1997-06-30 2000-04-25 Denso Corporation Semiconductor device
JP2000269518A (ja) 1999-03-18 2000-09-29 Toshiba Corp 電力用半導体素子及び半導体層の形成方法
US7345342B2 (en) 2001-01-30 2008-03-18 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US6645815B2 (en) 2001-11-20 2003-11-11 General Semiconductor, Inc. Method for forming trench MOSFET device with low parasitic resistance
US7091573B2 (en) 2002-03-19 2006-08-15 Infineon Technologies Ag Power transistor
JP3634830B2 (ja) 2002-09-25 2005-03-30 株式会社東芝 電力用半導体素子
AU2003260899A1 (en) 2002-10-04 2004-04-23 Koninklijke Philips Electronics N.V. Power semiconductor devices
AU2003275541A1 (en) 2002-10-18 2004-05-04 National Institute Of Advanced Industrial Science And Technology Silicon carbide semiconductor device and its manufacturing method
GB0225812D0 (en) * 2002-11-06 2002-12-11 Koninkl Philips Electronics Nv Semiconductor devices and methods of manufacturing thereof
US7652326B2 (en) 2003-05-20 2010-01-26 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US7407837B2 (en) 2004-01-27 2008-08-05 Fuji Electric Holdings Co., Ltd. Method of manufacturing silicon carbide semiconductor device
GB0403934D0 (en) 2004-02-21 2004-03-24 Koninkl Philips Electronics Nv Trench-gate semiconductor devices and the manufacture thereof
JP4068597B2 (ja) 2004-07-08 2008-03-26 株式会社東芝 半導体装置
JP5002148B2 (ja) 2005-11-24 2012-08-15 株式会社東芝 半導体装置
JP5101030B2 (ja) 2006-04-10 2012-12-19 三菱電機株式会社 トレンチ型ｍｏｓｆｅｔ及びその製造方法
JP2007288545A (ja) 2006-04-18 2007-11-01 Japan Radio Co Ltd 前置歪補償回路
JP2008108962A (ja) * 2006-10-26 2008-05-08 Toshiba Corp 半導体装置
US8421148B2 (en) * 2007-09-14 2013-04-16 Cree, Inc. Grid-UMOSFET with electric field shielding of gate oxide
EP2091083A3 (de) 2008-02-13 2009-10-14 Denso Corporation Siliziumkarbid-Halbleitervorrichtung mit tiefer Schicht
JP2009302436A (ja) 2008-06-17 2009-12-24 Denso Corp 炭化珪素半導体装置の製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5998268A (en) * 1996-09-30 1999-12-07 Denso Corporation Manufacturing method of semiconductor device with a groove
JP2001267570A (ja) * 2000-03-15 2001-09-28 Mitsubishi Electric Corp 半導体装置及び半導体装置製造方法
EP1168455A2 (de) * 2000-06-30 2002-01-02 Kabushiki Kaisha Toshiba Leistungshalbleiter-Schaltelement
US20020027237A1 (en) * 2000-09-05 2002-03-07 Fuji Electric Co., Ltd.. Semiconductor device
US20040135228A1 (en) * 2002-10-10 2004-07-15 Susumu Iwamoto Semiconductor element
US20050233539A1 (en) * 2004-04-14 2005-10-20 Yuuichi Takeuchi Method for manufacturing semiconductor device having trench in silicon carbide semiconductor substrate
US20070052015A1 (en) * 2005-09-07 2007-03-08 Nec Electronics Corporation Semiconductor device

Also Published As

Publication number Publication date
KR101015445B1 (ko) 2011-02-18
US8193564B2 (en) 2012-06-05
KR20090087833A (ko) 2009-08-18
US20090200559A1 (en) 2009-08-13
EP2091083A2 (de) 2009-08-19

Similar Documents

Publication Publication Date Title
EP2091083A3 (de) Siliziumkarbid-Halbleitervorrichtung mit tiefer Schicht
EP2302668A3 (de) Halbleiterbauelement mit spitzenlosen epitaktischen Source-/Drain-Bereichen
EP1094525A3 (de) Feldeffekt-Halbleiteranordnung mit einer Graben-Gateelektrode und Verfahren zu dessen Herstellung
WO2007024467A3 (en) Semiconductor devices employing poly-filled trenches
EP2631951A3 (de) Hochleistungsbipolar Transistoren mit isoliertem Gate
WO2008105077A1 (ja) 化合物半導体装置とその製造方法
WO2007110832A3 (en) Trench-gate semiconductor device and method of fabrication thereof
SG131008A1 (en) Different sti depth for ron improvement for ldmos integration with submicron devices
WO2005036650A3 (en) Insulated gate type semiconductor device and manufacturing method thereof
NZ590751A (en) Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making
TW200633125A (en) Semiconductor device and method of semiconductor device
WO2006017376A3 (en) Semiconductor power device having a top-side drain using a sinker trench
EP2482322A3 (de) Bipolarer Transistor mit VTS-isoliertem Gate
EP2755237A3 (de) Halbleiteranordnung mit Graben-Gateelektrode und Verfahren zu deren Herstellung
EP2418682A3 (de) Halbleitervorrichtung und zugehöriges Herstellungsverfahren
EP2267769A3 (de) DRAM-Transistor mit einem in einem Substratgraben ausgebildeten Gatter
EP2482321A3 (de) Verfahren zur Herstellung eines bipolaren Transistors mit tiefgrabenisoliertem Gate
WO2009019837A1 (ja) 炭化珪素半導体素子およびその製造方法
JP2009539259A5 (de)
WO2008013931A3 (en) Bottom source ldmosfet structure and method
EP2146377A3 (de) Graben-Gate-Feldeffektvorrichtungen
EP2482325A3 (de) Bipolarer Transistor mit tiefgrabenisoliertem Gate
EP1244150A3 (de) Vertikaler MOSFET mit einer Graben-Gateelektrode und Verfahren zu dessen Herstellung
EP2089907A1 (de) Halbleiterbauelement und herstellungsverfahren dafür
TW200717806A (en) Planar ultra-thin semiconductor-on-insulator channel MOSFET with embedded source/drains

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL BA RS

PUAL Search report despatched

Free format text: ORIGINAL CODE: 0009013

AK Designated contracting states

Kind code of ref document: A3

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL BA RS

17P Request for examination filed

Effective date: 20100331

AKX Designation fees paid

Designated state(s): DE IT SE

17Q First examination report despatched

Effective date: 20120417

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION HAS BEEN REFUSED

18R Application refused

Effective date: 20160207