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JP6641242B2 - Evaporator and evaporation source - Google Patents

Evaporator and evaporation source Download PDF

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Publication number
JP6641242B2
JP6641242B2 JP2016133685A JP2016133685A JP6641242B2 JP 6641242 B2 JP6641242 B2 JP 6641242B2 JP 2016133685 A JP2016133685 A JP 2016133685A JP 2016133685 A JP2016133685 A JP 2016133685A JP 6641242 B2 JP6641242 B2 JP 6641242B2
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Prior art keywords
container
evaporation source
evaporation
opening end
port
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JP2018003122A5 (en
JP2018003122A (en
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博之 田村
博之 田村
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Canon Tokki Corp
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Canon Tokki Corp
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Priority to JP2016133685A priority Critical patent/JP6641242B2/en
Priority to KR1020170084996A priority patent/KR102182869B1/en
Priority to CN202110723236.8A priority patent/CN113416930A/en
Priority to CN201710539978.9A priority patent/CN107574411B/en
Publication of JP2018003122A publication Critical patent/JP2018003122A/en
Publication of JP2018003122A5 publication Critical patent/JP2018003122A5/ja
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Publication of JP6641242B2 publication Critical patent/JP6641242B2/en
Priority to KR1020200154533A priority patent/KR102279411B1/en
Priority to KR1020210091561A priority patent/KR102458193B1/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225—Oblique incidence of vaporised material on substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Description

本発明は、蒸着装置及び蒸発源に関するものである。   The present invention relates to a vapor deposition device and an evaporation source.

本出願人は自己の先願に係る特願２０１４−２６５９８１号において、蒸発源に設けられた複数の蒸発口部のうち、外側に位置する蒸発口部の開口端面を、蒸発源の長手方向外側に向くように傾斜させることで、蒸発口部を長手方向外側に広がって配設させなくても膜厚分布が均一で、成膜されたパターンにおける膜ボケが抑制された蒸着膜を得られるようにした真空蒸着装置を提案している。   In Japanese Patent Application No. 2014-265981 according to the prior application, the present applicant describes, among a plurality of evaporation ports provided in an evaporation source, an opening end face of an evaporation port located on an outer side in a longitudinal direction of the evaporation source. By tilting so as to face the evaporation port, it is possible to obtain a vapor deposition film in which the film thickness distribution is uniform and the film blur in the formed pattern is suppressed without disposing the evaporating port portion in the longitudinal direction outside. We have proposed a vacuum evaporation system.

ところで、上述のように蒸発源Ａの蒸発口部Ｂの開口端面を蒸発源の長手方向外側に向くように傾斜させた場合、この傾斜する開口端面から放出される蒸発した成膜材料の飛散範囲が蒸発源側に傾き、図１に図示したように、蒸発源Ａの両端部（図１中Ｃで示す範囲）にかかってしまう問題がある（一般的に蒸発口部から放出される成膜材料の放出角度分布は、開口の法線方向を０°とする余弦則に従い、開口端面を含む仮想平面より前方に飛散する。）。   When the opening end face of the evaporation port B of the evaporation source A is inclined so as to face outward in the longitudinal direction of the evaporation source as described above, the scattering range of the evaporated film-forming material released from the inclined opening end face. Is tilted toward the evaporation source side, and as shown in FIG. 1, there is a problem that both ends (range indicated by C in FIG. 1) of the evaporation source A are applied (generally, a film discharged from the evaporation port portion). The emission angle distribution of the material scatters in front of the virtual plane including the end face of the opening according to the cosine rule in which the normal direction of the opening is 0 °.)

蒸発源に直接成膜材料の飛散範囲がかかる場合、蒸発源は加熱されているため、飛散した成膜材料は、蒸発源で反射若しくは再蒸発して基板上に到達し、膜厚分布に影響を与える可能性がある。   If the evaporation source directly covers the scattering range of the deposition material, the evaporation source is heated, so the scattered deposition material is reflected or re-evaporated by the evaporation source and reaches the substrate, affecting the film thickness distribution. Could give.

また、蒸発源を冷却部材で覆っていた場合には、成膜材料の飛散範囲にかかっている冷却部材上に成膜材料が堆積することになる。冷却部材上の堆積物は再蒸発しにくく、徐々に成長し、いずれは蒸発口部の開口を塞ぐ可能性がある。   Further, when the evaporation source is covered with the cooling member, the film forming material is deposited on the cooling member covering the scattering range of the film forming material. The deposit on the cooling member is unlikely to re-evaporate, grows gradually, and may eventually block the opening of the evaporation port.

本発明は、上述のような現状に鑑みてなされたもので、最も外側に位置する蒸発口部の開口端面が蒸発源の長手方向外側に向くように傾斜した構成でも、成膜材料の蒸発源への反射若しくは再蒸発及び蒸発源周辺部材への堆積を防止できる蒸着装置及び蒸発源を提供するものである。   The present invention has been made in view of the above situation, and even in a configuration in which the opening end face of the outermost evaporation port portion is inclined so as to face outward in the longitudinal direction of the evaporation source, the evaporation source It is an object of the present invention to provide a vapor deposition apparatus and an evaporation source which can prevent reflection or re-evaporation on the surface and deposition on an evaporation source peripheral member.

成膜材料が収容される容器と、前記容器の長手方向に沿って設けられる複数の蒸発口部と、前記容器の周囲に設けられる蒸発源周辺部材とを有する蒸発源を備え、前記蒸発口部から前記成膜材料を放出することで、基板上に蒸着膜を形成するように構成した蒸着装置であって、前記蒸発源周辺部材は、前記容器を加熱するヒータ、前記容器からの熱を反射するリフレクタ、前記容器の周囲に設けられる水冷板若しくは前記容器を囲む防着板であり、前記複数の蒸発口部のうち最も外側に設けられた一対の外側蒸発口部は、夫々前記容器の長手方向外側に向くように傾斜する開口端面を有し、前記容器及び前記蒸発源周辺部材が、前記開口端面を含む仮想平面より外側に突出せず前記仮想平面の内側に収まるように構成されていることを特徴とする蒸着装置に係るものである。 An evaporation source having a container in which a film forming material is stored, a plurality of evaporation ports provided along a longitudinal direction of the container, and an evaporation source peripheral member provided around the container; A vapor deposition device configured to form a vapor deposition film on a substrate by discharging the film forming material from the substrate, wherein the peripheral member of the evaporation source includes a heater for heating the container, and heat from the container. A reflector, a water-cooling plate provided around the container or a deposition-preventing plate surrounding the container, and a pair of outer evaporating ports provided at the outermost of the plurality of evaporating ports are respectively formed in a longitudinal direction of the container. The container and the evaporation source peripheral member are configured to fit inside the virtual plane without protruding outside a virtual plane including the opening end surface. It is characterized by Those relating to that deposition apparatus.

本発明は上述のように構成したから、最も外側に位置する蒸発口部の開口端面が蒸発源の長手方向外側に向くように傾斜した構成でも、成膜材料の蒸発源への反射若しくは再蒸発及び蒸発源周辺部材への堆積を防止できる蒸着装置及び蒸発源となる。   Since the present invention is configured as described above, even if the opening end face of the outermost evaporation port is inclined so as to face outward in the longitudinal direction of the evaporation source, reflection or re-evaporation of the film-forming material to the evaporation source is performed. In addition, the vapor deposition device and the vapor source can prevent deposition on the peripheral members of the vapor source.

背景技術の概略説明図である。It is a schematic explanatory view of a background art. 本実施例の拡大概略説明断面図である。It is an expansion outline explanatory sectional view of a present Example. 本実施例の概略説明断面図である。It is a schematic explanatory sectional view of a present Example. 本実施例の要部の概略図である。It is the schematic of the principal part of a present Example. 別例１の拡大概略説明断面図である。It is an expansion schematic explanatory sectional view of another example 1. 別例２の概略説明断面図である。It is a schematic explanatory sectional view of another example 2. 別例３の拡大概略説明断面図である。It is an expansion schematic explanatory sectional view of another example 3. 別例４の概略説明正面図である。It is a schematic explanatory front view of another example 4. 別例４の概略説明側面図である。It is a schematic explanatory side view of another example 4. 蒸着装置の概略説明正面図である。It is a schematic explanatory front view of a vapor deposition apparatus. 蒸着装置の概略説明側面図である。It is a schematic explanatory side view of a vapor deposition apparatus.

好適と考える本発明の実施形態を、図面に基づいて本発明の作用を示して簡単に説明する。   Preferred embodiments of the present invention will be briefly described with reference to the drawings, showing the operation of the present invention.

容器１の蒸発口部２ａ・２ｂから蒸発した成膜材料を放出して基板に蒸着膜を形成する。   The evaporated film-forming material is discharged from the evaporation ports 2a and 2b of the container 1 to form a vapor-deposited film on the substrate.

この際、容器１及び加熱部材や冷却部材等の蒸発源周辺部材３が、外側蒸発口部２ａの開口端面を含む仮想平面より外側に突出せず、即ち、外側蒸発口部２ａの開口端面から放出される成膜材料がかかる領域に容器１及び蒸発源周辺部材３が存在しないから、外側蒸発口部２ａの開口端面から放出される成膜材料の容器１への反射若しくは再蒸発及び蒸発源周辺部材３への堆積を防止することができる。   At this time, the container 1 and the evaporation source peripheral members 3 such as the heating member and the cooling member do not protrude outside a virtual plane including the opening end surface of the outer evaporation opening 2a, that is, from the opening end surface of the outer evaporation opening 2a. Since the container 1 and the evaporation source peripheral member 3 do not exist in such a region where the film forming material to be discharged is present, reflection or reevaporation of the film forming material discharged from the opening end face of the outer evaporation port 2a to the container 1 and the evaporation source Accumulation on the peripheral member 3 can be prevented.

本発明の具体的な実施例について図面に基づいて説明する。   A specific embodiment of the present invention will be described with reference to the drawings.

本実施例は図１０，１１に図示したような蒸着装置に本発明を適用した例である。この蒸着装置は、減圧雰囲気を保持する真空槽20内で基板21に薄膜を形成させるために、成膜材料を放出する蒸発源25が基板21と対向する位置に配設され、蒸発源25から放出された蒸発粒子の蒸発レートをモニタする膜厚モニタ22と、真空槽20外に設けたモニタした蒸発粒子の量を膜厚に換算する膜厚計23と、換算された膜厚が所望の膜厚になるように成膜材料の蒸発レートを制御するために蒸発源25を加熱するヒータ用電源24とを設けている。また、基板21と蒸発源25とを相対的に移動させる相対移動機構が設けられており、相対移動しながら成膜を行うことで、基板全面に渡って均一な膜厚の蒸着膜を形成することができる。   This embodiment is an example in which the present invention is applied to a vapor deposition apparatus as shown in FIGS. In this evaporation apparatus, an evaporation source 25 for discharging a film-forming material is disposed at a position facing the substrate 21 in order to form a thin film on the substrate 21 in a vacuum chamber 20 holding a reduced-pressure atmosphere. A film thickness monitor 22 for monitoring the evaporation rate of the released evaporation particles, a film thickness meter 23 provided outside the vacuum chamber 20 for converting the amount of the monitored evaporation particles into a film thickness, and the converted film thickness is a desired value. A heater power supply 24 for heating the evaporation source 25 is provided to control the evaporation rate of the film-forming material so as to obtain a film thickness. Further, a relative movement mechanism for relatively moving the substrate 21 and the evaporation source 25 is provided, and by forming a film while moving relatively, a vapor deposition film having a uniform film thickness is formed over the entire surface of the substrate. be able to.

また、前記容器１と前記容器１に対向する位置に配設された基板とは、前記容器１の長手方向と直交する方向に相対的に移動し、蒸発口部２から前記成膜材料を放出することで、基板上に蒸着膜を形成するように構成している。   Further, the container 1 and the substrate disposed at a position facing the container 1 relatively move in a direction orthogonal to the longitudinal direction of the container 1 and discharge the film-forming material from the evaporation port 2. By doing so, a deposition film is formed on the substrate.

本実施例においては、成膜材料が収容される容器１と、この容器１に容器１の長手方向に沿って複数設けられる蒸発口部２ａ・２ｂとから成る蒸発源25を採用している。   In this embodiment, an evaporation source 25 including a container 1 in which a film-forming material is stored and a plurality of evaporation ports 2a and 2b provided in the container 1 along the longitudinal direction of the container 1 is employed.

本実施例の前記容器１及びこの容器１の周囲に設けられる蒸発源周辺部材３は、前記開口端面を含む仮想平面より外側に突出せず前記仮想平面の内側に収まるように構成されている。   The container 1 of this embodiment and the evaporation source peripheral member 3 provided around the container 1 are configured so as not to protrude outside a virtual plane including the opening end face but to fit inside the virtual plane.

また、容器１には気化した成膜材料が拡散する拡散部４が設けられ、この拡散部４の容器１の長手方向における幅Ｗ１は蒸発口部２ａ・２ｂの配設幅Ｗ２より狭い幅に設定されている。本実施例においては、容器１の下部を材料収容部５とし、上部を拡散部４とした一体型の容器１を採用している。   Further, the container 1 is provided with a diffusion portion 4 in which the vaporized film-forming material is diffused, and the width W1 of the diffusion portion 4 in the longitudinal direction of the container 1 is smaller than the arrangement width W2 of the evaporation ports 2a and 2b. Is set. In this embodiment, an integrated container 1 in which a lower portion of the container 1 is a material storage portion 5 and an upper portion is a diffusion portion 4 is employed.

前記複数の蒸発口部２のうち最も外側に設けられた一対の外側蒸発口部２ａは、夫々前記容器１の長手方向外側に向くように傾斜する開口端面を有している。   A pair of outer evaporating ports 2a provided on the outermost side of the plurality of evaporating ports 2 each have an opening end face inclined so as to face outward in the longitudinal direction of the container 1.

また、外側蒸発口部２ａ以外の他の蒸発口部２ｂは、外側蒸発口部２ａと同様に容器１の長手方向外側に向くように傾斜する開口端面を有する構成としても良いし、長手方向内側を向くように傾斜する開口端面を有する構成としても良いし、容器１に垂直に立設された構成としても良い。   In addition, the other evaporating port 2b other than the outer evaporating port 2a may have an opening end surface that is inclined so as to face outward in the longitudinal direction of the container 1 similarly to the outer evaporating port 2a, or may be configured to have an inner side in the longitudinal direction. It may be configured to have an opening end face inclined so as to face, or may be configured to stand upright on the container 1.

本実施例においては、最も内側の一組を除く他の蒸発口部２ｂを外側蒸発口部２ａと同様の構成とし、最も内側の一組の蒸発口部２ｂを容器１に垂直に立設した構成としている。   In the present embodiment, the other evaporating ports 2b except for the innermost pair are configured similarly to the outer evaporating ports 2a, and the innermost pair of evaporating ports 2b are set upright on the container 1. It has a configuration.

本実施例の蒸発源周辺部材３は、平面視矩形状の容器１の周囲を囲むように設けられる角環状の部材であり、具体的には、容器１の加熱部材及び冷却部材である。   The evaporation source peripheral member 3 of the present embodiment is a rectangular ring-shaped member provided so as to surround the rectangular container 1 in plan view, and specifically, a heating member and a cooling member of the container 1.

本実施例においては、図２，３に図示したように、蒸発源周辺部材３として内側から順に、容器１を加熱するヒータ６と、容器１及びヒータ６からの熱を反射するリフレクタ７と、前記容器１、ヒータ６及びリフレクタ７からの熱を周囲に拡散させないための水冷板８と、容器１、ヒータ６、リフレクタ７及び水冷板８を囲む防着板９とを設けている。また、本実施例においては防着板９は、ヒータ６，リフレクタ７及び水冷板８の上面も覆う形状としている。更に、防着板９は、蒸発口部２ａ・２ｂの配設領域を除き、容器１の上面全体も覆う形状としている。   In the present embodiment, as shown in FIGS. 2 and 3, a heater 6 for heating the container 1 and a reflector 7 for reflecting heat from the container 1 and the heater 6 are arranged in order from the inside as the evaporation source peripheral member 3. A water cooling plate 8 for preventing heat from the container 1, the heater 6 and the reflector 7 from diffusing to the surroundings, and a deposition preventing plate 9 surrounding the container 1, the heater 6, the reflector 7 and the water cooling plate 8 are provided. Further, in this embodiment, the attachment-preventing plate 9 has a shape that also covers the upper surfaces of the heater 6, the reflector 7, and the water-cooling plate 8. Further, the attachment-preventing plate 9 is formed so as to cover the entire upper surface of the container 1 except for the area where the evaporation ports 2a and 2b are provided.

容器１は、容器１の長手方向端面から外側蒸発口部２ａまでの距離が、容器１の両端部及び前記蒸発源周辺部材３が前記仮想平面の外側に位置しない長さとなるように構成されている。   The container 1 is configured such that the distance from the longitudinal end face of the container 1 to the outer evaporation port 2a is a length such that both ends of the container 1 and the evaporation source peripheral member 3 are not located outside the virtual plane. I have.

具体的には、容器１の長手方向端面から外側蒸発口部２ａまでの長さ、外側蒸発口部２ａの開口端面の傾斜角度、蒸発源周辺部材３の厚みを適宜設定し、容器１及び蒸発源周辺部材３が前記仮想平面の内側に収まるように構成されている。ここで、外側蒸発口部２ａの開口端面の傾斜角度は３０°〜４５°に設定するのが好ましい。   Specifically, the length from the longitudinal end face of the container 1 to the outer evaporation port 2a, the inclination angle of the opening end face of the outer evaporation port 2a, and the thickness of the evaporation source peripheral member 3 are appropriately set, and the container 1 and the evaporation The source peripheral member 3 is configured to fit inside the virtual plane. Here, it is preferable that the inclination angle of the opening end face of the outer evaporation port 2a is set to 30 ° to 45 °.

例えば、図４に図示したように、容器１の長手方向端面から外側蒸発口部２ａまでの長さＭ１、蒸発源周辺部材３の端面から外側蒸発口部２ａまでの長さＭ２及び蒸発源周辺部材３の厚みＭ３は、外側蒸発口部２ａの開口端面の傾斜角度θ、外側蒸発口部２ａの（容器１の上面から突出する）先端長Ｌ２を用い、以下のようにして決定することができる。なお、図中Ｌ１は外側蒸発口部２ａの全体長である。   For example, as shown in FIG. 4, the length M1 from the longitudinal end face of the container 1 to the outer evaporation port 2a, the length M2 from the end face of the evaporation source peripheral member 3 to the outer evaporation port 2a, and the vicinity of the evaporation source The thickness M3 of the member 3 can be determined as follows using the inclination angle θ of the opening end surface of the outer evaporation port 2a and the tip length L2 (projecting from the upper surface of the container 1) of the outer evaporation port 2a. it can. In the drawing, L1 is the entire length of the outer evaporation port 2a.

Ｍ１＝Ｌ２×ｓｉｎθ
Ｍ２＝Ｌ２÷ｓｉｎθ
Ｍ３＝Ｍ２−Ｍ１
例えば、Ｌ２が４０ｍｍ、θが４０°の場合、Ｍ１は２５．７ｍｍ、Ｍ２は６２．２ｍｍ、Ｍ３は３６．５ｍｍとなる。 M1 = L2 × sin θ
M2 = L2 ÷ sin θ
M3 = M2-M1
For example, when L2 is 40 mm and θ is 40 °, M1 is 25.7 mm, M2 is 62.2 mm, and M3 is 36.5 mm.

また、蒸発源周辺部材３は、図２においては容器１の端部の側面及び端面を囲む構成としているが、容器１の端部の上面まで囲む構成としても良い。例えば、図５に図示した別例１のように、ヒータ６、リフレクタ７及び防着板９が容器１の端部の上面も覆う構成としても良い。   Further, although the evaporation source peripheral member 3 is configured to surround the side surface and the end surface of the end of the container 1 in FIG. 2, it may be configured to surround the upper surface of the end of the container 1. For example, as in another example 1 illustrated in FIG. 5, the heater 6, the reflector 7, and the protection plate 9 may also be configured to cover the upper surface of the end of the container 1.

また、容器１の構成として上述したような一体型に限らず、例えば図６に図示した別例２の蒸発源25のように、材料収容部５と、拡散部４とが連通部12を介して設けられ、前記材料収容部５と前記拡散部４の２つを合わせて容器１とする分離型としても良い。この場合、拡散部４の幅Ｗ１を前記仮想平面から容器１等が外側に突出しないように狭くすれば、材料収容部５の幅Ｗ３は前記仮想平面の内側に収めるために短くする必要がないから、拡散部４の幅Ｗ１より広くしてより多くの材料を収容できる構成を実現でき、また、材料収容部５の基板温度への影響を抑制できる等、一層良好に成膜を行える構成となる。   Further, the configuration of the container 1 is not limited to the integral type as described above. For example, as in the evaporation source 25 of another example 2 shown in FIG. 6, the material storage unit 5 and the diffusion unit 4 are connected via the communication unit 12. The material storage unit 5 and the diffusion unit 4 may be separated to form a container 1 by combining the two. In this case, if the width W1 of the diffusion unit 4 is reduced so that the container 1 and the like do not protrude outward from the virtual plane, the width W3 of the material storage unit 5 does not need to be shortened to fit inside the virtual plane. Therefore, it is possible to realize a configuration capable of accommodating a larger amount of material by making the width wider than the width W1 of the diffusion section 4, and to suppress the influence of the material accommodation section 5 on the substrate temperature, and to perform a better film formation. Become.

また、本実施例においては、蒸発口部２ａ・２ｂの容器１の長手方向外側に向くように傾斜する開口端面の傾斜角度を同一としているが、外側蒸発口部２ａの開口端面の傾斜角度が最も大きくなるように、各開口端面の傾斜角度を異なる角度に設定しても良い。また、その際、蒸発口部２ａ・２ｂの開口端面の傾斜角度は、これより内側の蒸発口部２ｂの開口端面の傾斜角度以上の角度となるように設定しても良い。   Further, in the present embodiment, the inclination angles of the opening end faces of the evaporation ports 2a and 2b that are inclined so as to face outward in the longitudinal direction of the container 1 are the same, but the inclination angles of the opening end faces of the outer evaporation ports 2a are the same. The angle of inclination of each opening end face may be set to a different angle so as to be the largest. At this time, the inclination angle of the opening end faces of the evaporation ports 2a and 2b may be set to be equal to or larger than the inclination angle of the opening end faces of the evaporation ports 2b inside the evaporation ports 2a and 2b.

この場合、内側の蒸発口部２ｂから放出した蒸発粒子が外側の蒸発口部２ａ・２ｂに付着し再蒸発しない構成とすることができる。また、外側の蒸発口部２ａ・２ｂの方が基板端までの距離が長く、より遠くまで蒸発粒子を到達させる必要があるが、外側程傾斜角度を大きくすることで外側の蒸発口部２ａ・２ｂから放出される蒸発粒子をより遠くまで到達させることが可能となる。   In this case, it is possible to adopt a configuration in which evaporating particles released from the inner evaporating port 2b adhere to the outer evaporating ports 2a and 2b and do not re-evaporate. In addition, the outer evaporation ports 2a and 2b have a longer distance to the substrate edge, and it is necessary to reach the evaporation particles farther. However, the outer evaporation ports 2a and 2b are increased by increasing the inclination angle toward the outer side. It is possible to make the evaporating particles emitted from 2b reach farther.

また、図７に図示した別例３のように、外側蒸発口部２ａだけでなく、容器１の長手方向外側に向くように傾斜する開口端面を有する他の蒸発口部２ｂに対しても夫々、容器１及びこの容器１の周囲に設けられる蒸発源周辺部材３が、各蒸発口部２ａ・２ｂの開口端面を含む仮想平面より外側に突出せず前記仮想平面の内側に収まるように構成するとより一層効果が大きい。   Further, as shown in FIG. 7, not only the outer evaporating port 2a but also the other evaporating ports 2b having an opening end surface inclined so as to face outward in the longitudinal direction of the container 1, respectively. The container 1 and the evaporation source peripheral member 3 provided around the container 1 do not protrude outside the virtual plane including the opening end faces of the evaporation ports 2a and 2b, but fit inside the virtual plane. Greater effect.

また、一体型の容器１若しくは分離型の容器１の上部を、図８及び図９に図示した別例４のように、左右両端上部若しくは前後両端上部または左右両端上部及び前後両端上部を所定角度で面取りした構成としても良い。図８の場合、容器１の長手方向の蒸発源周辺部材３への材料付着を、図９の場合、蒸発源短手方向前後の蒸発源周辺部材３への材料付着を一層防止できる構成となる。   8 and 9, the upper portion of the integrated container 1 or the separated type container 1 is formed at a predetermined angle between the upper left and right ends, the upper front and rear ends, or the upper right and left ends and the upper front and rear ends. Alternatively, a chamfered configuration may be used. In the case of FIG. 8, the material is prevented from adhering to the evaporation source peripheral member 3 in the longitudinal direction of the container 1, and in the case of FIG. 9, the material is prevented from adhering to the evaporation source peripheral member 3 before and after the evaporation source in the short direction. .

なお、本発明は、本実施例に限られるものではなく、各構成要件の具体的構成は適宜設計し得るものである。   It should be noted that the present invention is not limited to the present embodiment, and a specific configuration of each component can be appropriately designed.

１ 容器
２ａ・２ｂ 蒸発口部
３ 蒸発源周辺部材
４ 拡散部
５ 材料収容部
６ ヒータ
７ リフレクタ
８ 水冷板
９ 防着板 DESCRIPTION OF SYMBOLS 1 Container 2a, 2b Evaporation port part 3 Evaporation source peripheral member 4 Diffusion part 5 Material storage part 6 Heater 7 Reflector 8 Water cooling plate 9 Deposition plate

Claims (14)

成膜材料が収容される容器と、前記容器の長手方向に沿って設けられる複数の蒸発口部と、前記容器の周囲に設けられる蒸発源周辺部材とを有する蒸発源を備え、前記蒸発口部から前記成膜材料を放出することで、基板上に蒸着膜を形成するように構成した蒸着装置であって、前記蒸発源周辺部材は、前記容器を加熱するヒータ、前記容器からの熱を反射するリフレクタ、前記容器の周囲に設けられる水冷板若しくは前記容器を囲む防着板であり、前記複数の蒸発口部のうち最も外側に設けられた一対の外側蒸発口部は、夫々前記容器の長手方向外側に向くように傾斜する開口端面を有し、前記容器及び前記蒸発源周辺部材が、前記開口端面を含む仮想平面より外側に突出せず前記仮想平面の内側に収まるように構成されていることを特徴とする蒸着装置。 An evaporation source having a container in which a film forming material is stored, a plurality of evaporation ports provided along a longitudinal direction of the container, and an evaporation source peripheral member provided around the container; A vapor deposition device configured to form a vapor deposition film on a substrate by discharging the film forming material from the substrate, wherein the peripheral member of the evaporation source includes a heater for heating the container, and heat from the container. A reflector, a water-cooling plate provided around the container or a deposition-preventing plate surrounding the container, and a pair of outer evaporating ports provided at the outermost of the plurality of evaporating ports are respectively formed in a longitudinal direction of the container. The container and the evaporation source peripheral member are configured to fit inside the virtual plane without protruding outside a virtual plane including the opening end surface. It is characterized by That the vapor deposition apparatus. 前記容器には蒸発した前記成膜材料が拡散する拡散部が設けられ、この拡散部の容器の長手方向における幅は前記蒸発口部の配設幅より狭い幅に設定されていることを特徴とする請求項１に記載の蒸着装置。   The container is provided with a diffusion portion in which the evaporated film-forming material is diffused, and the width of the diffusion portion in the longitudinal direction of the container is set to be smaller than the arrangement width of the evaporation port portion. The vapor deposition device according to claim 1. 前記外側蒸発口部を除くいずれかの蒸発口部は前記容器の長手方向外側に向くように傾斜する開口端面を有し、前記外側蒸発口部の開口端面の傾斜角度が最も大きくなるように設定されていることを特徴とする請求項１，２のいずれか１項に記載の蒸着装置。   Any one of the evaporating ports except the outer evaporating port has an opening end face inclined so as to face outward in the longitudinal direction of the container, and the inclination angle of the opening end face of the outer evaporating port is set to be the largest. The vapor deposition apparatus according to any one of claims 1 and 2, wherein the vapor deposition apparatus is used. 前記蒸発口部の開口端面の傾斜角度は、これより内側の蒸発口部の開口端面の傾斜角度以上の角度に設定されていることを特徴とする請求項１〜３のいずれか１項に記載の蒸着装置。   The angle of inclination of the opening end face of the evaporating port is set to an angle equal to or greater than the angle of inclination of the opening end face of the evaporating port inside of the evaporating port. Deposition equipment. 前記外側蒸発口部の開口端面の傾斜角度は３０°〜４５°に設定されていることを特徴とする請求項１〜４のいずれか１項に記載の蒸着装置。   The vapor deposition apparatus according to any one of claims 1 to 4, wherein an inclination angle of an opening end surface of the outer evaporation port is set to 30 ° to 45 °. 前記容器は、材料収容部と拡散部とで構成されていることを特徴とする請求項１〜５のいずれか１項に記載の蒸着装置。   The said container is comprised by the material accommodation part and the diffusion part, The vapor deposition apparatus of any one of Claims 1-5 characterized by the above-mentioned. 前記材料収容部の幅は前記拡散部の幅より広い幅に設定されていることを特徴とする請求項６に記載の蒸着装置。   The vapor deposition apparatus according to claim 6, wherein the width of the material storage unit is set to be wider than the width of the diffusion unit. 成膜材料が収容される容器と、前記容器の長手方向に沿って設けられる複数の蒸発口部と、前記容器の周囲に設けられる蒸発源周辺部材とを有する蒸発源であって、前記蒸発源周辺部材は、前記容器を加熱するヒータ、前記容器からの熱を反射するリフレクタ、前記容器の周囲に設けられる水冷板若しくは前記容器を囲む防着板であり、前記複数の蒸発口部のうち最も外側に設けられた一対の外側蒸発口部は、夫々前記容器の長手方向外側に向くように傾斜する開口端面を有し、前記容器及び前記蒸発源周辺部材が、前記開口端面を含む仮想平面より外側に突出せず前記仮想平面の内側に収まるように構成されていることを特徴とする蒸発源。 A container film forming material is contained, a evaporation source having a plurality of evaporation port portion provided along the longitudinal direction of the container, and a evaporation source peripheral member provided around the vessel, the evaporation source The peripheral member is a heater that heats the container, a reflector that reflects heat from the container, a water-cooled plate provided around the container, or a deposition-preventing plate that surrounds the container. A pair of outer evaporating ports provided on the outside each have an opening end surface inclined so as to face outward in the longitudinal direction of the container, and the container and the evaporation source peripheral member are more than a virtual plane including the opening end surface. An evaporation source, wherein the evaporation source is configured to fit inside the virtual plane without protruding outside. 前記容器には蒸発した前記成膜材料が拡散する拡散部が設けられ、この拡散部の容器の長手方向における幅は前記蒸発口部の配設幅より狭い幅に設定されていることを特徴とする請求項８に記載の蒸発源。 The container is provided with a diffusion portion in which the evaporated film-forming material is diffused, and the width of the diffusion portion in the longitudinal direction of the container is set to be smaller than the arrangement width of the evaporation port portion. The evaporation source according to claim 8 , wherein 前記外側蒸発口部を除くいずれかの蒸発口部は前記容器の長手方向外側に向くように傾斜する開口端面を有し、前記外側蒸発口部の開口端面の傾斜角度が最も大きくなるように設定されていることを特徴とする請求項８，９のいずれか１項に記載の蒸発源。 Any one of the evaporating ports except the outer evaporating port has an opening end face inclined so as to face outward in the longitudinal direction of the container, and the inclination angle of the opening end face of the outer evaporating port is set to be the largest. The evaporation source according to claim 8 , wherein the evaporation source is provided. 前記蒸発口部の開口端面の傾斜角度は、これより内側の蒸発口部の開口端面の傾斜角度以上の角度に設定されていることを特徴とする請求項８〜１０のいずれか１項に記載の蒸発源。 The inclination angle of the opening end face of the said evaporating port part is set to the angle more than the inclination angle of the opening end face of the evaporating port part inside this, The Claims 8-10 characterized by the above-mentioned. Evaporation source. 前記外側蒸発口部の開口端面の傾斜角度は３０°〜４５°に設定されていることを特徴とする請求項８〜１１のいずれか１項に記載の蒸発源。 The evaporation source according to any one of claims 8 to 11 , wherein an inclination angle of an opening end surface of the outer evaporation port is set to 30 ° to 45 °. 前記容器は、材料収容部と拡散部とで構成されていることを特徴とする請求項８〜１２のいずれか１項に記載の蒸発源。 The evaporation source according to any one of claims 8 to 12 , wherein the container includes a material storage unit and a diffusion unit. 前記材料収容部の幅は前記拡散部の幅より広い幅に設定されていることを特徴とする請求項１３に記載の蒸発源。 14. The evaporation source according to claim 13 , wherein the width of the material storage unit is set to be wider than the width of the diffusion unit.
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CN113416930A (en) 2021-09-21
JP2018003122A (en) 2018-01-11

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