TWI447246B - Vacuum evaporation device - Google Patents

Description

Vacuum evaporation device

The present invention relates to a vacuum vapor deposition apparatus which deposits a vapor deposition material on a vapor-deposited body such as a substrate to form a thin film.

In the vacuum vapor deposition apparatus, an evaporation source containing a vapor deposition material and a vapor-deposited body such as a substrate are placed in a vacuum chamber; and the evaporation source is heated in a state where the vacuum chamber is decompressed, and the evaporation source is vaporized to make the gas. A vapor deposition material is deposited on the surface of the vapor-deposited body to form a film. However, some of the vapor deposition material vaporized from the evaporation source may not travel toward the vapor-deposited body and may not adhere to the surface of the vapor-deposited body. If such a vapor deposition material that does not adhere to the vapor-deposited body increases, the use efficiency of the material is lowered and the vapor deposition rate is lowered.

Therefore, a vacuum evaporation apparatus has been proposed in which a cylindrical body surrounds a space between an evaporation source and a vapor-deposited body, and the cylindrical body is heated at a temperature at which the vapor deposition material is re-evaporated to vaporize the vaporized body. The material is vapor-deposited on the surface of the vapor-deposited body in a cylindrical body (for example, see Patent Document 1).

However, when a plurality of evaporation sources are used to form a thin film of a plurality of types of materials, if the positions of the evaporation sources are different, the materials vaporized in the cylindrical body may not be uniformly distributed, and may be vapor-deposited on the vapor-deposited body. The evaporation material will be uneven. Therefore, it is known that a vacuum vapor deposition machine for adjusting the distribution and flow of a vapor deposition material is provided on a flow path of a vapor deposition material released from a plurality of evaporation sources, for example, referring to a patent. Literature 2).

[Practical Technical Literature] [Patent Literature]

Patent Document 1: Japanese Patent Laid-Open No. Hei 9-272703

Patent Document 2: Japanese Laid-Open Patent Publication No. 2005-213570

However, in the vapor deposition device described in Patent Document 2, when a perforated plate shutter is provided in the flow path of the vapor deposition material, the vapor deposition material adheres to the perforated plate shutter to cause clogging. When the perforated plate shutter is clogged, vapor deposition unevenness may occur in the vapor-deposited body, and the vapor deposition rate may not be accurately controlled, and the vapor deposition film having the desired film thickness may not be formed.

The present invention has been made to solve the above problems, and an object of the invention is to provide a vacuum vapor deposition apparatus which can form a vapor deposition film having a desired film thickness when a vapor deposition film formed on a vapor-deposited body is less likely to be uneven when a plurality of evaporation sources are used.

In order to solve the above problems, the vacuum vapor deposition apparatus of the present invention comprises: a plurality of evaporation sources for vapor-depositing a plurality of types of materials on the vapor-deposited body; a cylindrical body surrounding the plurality of evaporation sources and the steamed a space between the plating bodies having an opening surface on the side of the vapor-deposited body; and a vacuum chamber for vacating the space in which the vapor-deposited body, the evaporation source, and the cylindrical body are disposed; the vacuum evaporation The device is characterized in that it further has a partition plate disposed inside the cylindrical body; the partition plate has an opening portion; and the opening portion has a circumference of a diameter D centered on a center of gravity of a plan view shape of the partition plate In the range, at least one or more are provided; the diameter D is 2/3 of the maximum value between two points on the outer circumference of the partition plate.

In the above vacuum evaporation apparatus, the opening portion is preferably formed in a geometric shape.

In the above vacuum vapor deposition apparatus, it is preferable that the partition plate has an auxiliary opening portion having an opening area smaller than the opening portion at an outer peripheral position of the partition plate in a plan view shape.

In the above vacuum vapor deposition apparatus, the opening portion is preferably formed to be point-symmetric with respect to the center of gravity of the partition plate.

In the above vacuum vapor deposition apparatus, it is preferable to include a plurality of the partition plates; the plurality of partition plates preferably have openings having mutually different shapes.

In the above vacuum evaporation apparatus, the partition plate preferably has a heating mechanism and a temperature adjustment mechanism.

According to the invention, the opening of the partitioning plate is disposed in a circumferential range of the diameter D centered on the center of gravity of the planar shape of the partitioning plate; and the diameter D is the maximum distance between two points on the outer circumference of the partitioning plate. 2/3 of the value. Therefore, the flux distribution of the vaporized material to the vapor-deposited body side can be made the same; when a plurality of evaporation sources are used, the vapor deposited film formed on the vapor-deposited body is less likely to be uneven, and the obtained film thickness can be obtained. The vapor deposited film.

[Best form for implementing the invention]

A vacuum vapor deposition apparatus according to a first embodiment of the present invention will be described with reference to Figs. 1 to 3 . As shown in Fig. 1, the vacuum vapor deposition apparatus 1 of the present embodiment includes a plurality of evaporation sources 3 for depositing a plurality of types of materials on the vapor-deposited body 2, and a cylindrical body 4 surrounding the plural The space between the evaporation source 3 and the vapor-deposited body 2 has an opening surface on the side of the vapor-deposited body 2. Moreover, the vacuum vapor deposition apparatus 1 includes the vacuum chamber 5, and the space in which the vapor-deposited body 2, the evaporation source 3, and the cylindrical body 4 are disposed is in a vacuum state. The vacuum chamber 5 can be evacuated by the vacuum pump 6 to be depressurized to a vacuum state.

The cylindrical body 4 has an opening surface 41 at one end thereof, and a correction plate 48 for flow rate control to be described later is provided on the opening surface 41, and the vapor-deposited body 2 such as a substrate is disposed so as to face the same. At the other end of the cylindrical body 4, a plurality of evaporation sources 3 are disposed at positions different from each other, and a portion where the evaporation source 3 is not disposed is connected by the bottom portion 42.

Inside the cylindrical body 4, a partition plate 7 having at least one or more openings 70 is disposed. A locking portion (not shown) for locking the partition plate 7 horizontally is formed on the inner wall of the cylindrical body 4. The locking portion is provided at a predetermined interval from the bottom portion 42 of the cylindrical body 4 to the opening surface 41. The partitioning plate 7 can be provided at an appropriate height of the tubular body 4. The installation height of the partition plate 7 differs depending on the diameter of the cylindrical body 4, etc., but it is preferably located near the bottom portion 42 instead of the opening surface 41 side. In this way, the space between the partition plate 7 and the opening surface 41 in the cylindrical body 4 can be ensured, so that the vaporized material can be uniformly adhered to the vapor-deposited body 2. On the other hand, when the partition plate 7 is provided at a position close to the opening surface 41, the distance between the opening 70 of the partition plate 7 and the vapor-deposited body 2 becomes close, and the vapor deposition material is likely to be concentrated and adhered to the vapor-deposited body. The central area of 2. Therefore, the partition plate 7 is preferably provided such that the ratio of the space on the side of the evaporation source 3 to the space on the side of the vapor-deposited body 2 is, for example, 1:2 to 1:5 in the cylindrical body 4 divided therefrom.

At least one or more of the openings 70 of the partition plate 7 are provided in a circumferential range of the diameter D centering on the center of gravity P (see FIG. 2) of the plan view of the partition plate 7. Further, the diameter D is 2/3 of the maximum value between the two points on the outer circumference of the partition plate 7.

A cylindrical heater (hereinafter referred to as a heater 43) composed of a sheath heater or the like is wound around the outer circumference of the tubular body 4. The heater 43 is connected to the power source 44 to receive power, thereby heating the inside of the cylindrical body 4. Further, a temperature sensor 45 for measuring the temperature in the tubular body 4 is provided at the bottom portion 42 of the tubular body 4; the measurement information of the temperature sensor 45 is output to a CPU or a memory. Cylinder temperature controller 46. The cylindrical body temperature controller 46 receives the measurement information of the temperature sensor 45 to control the amount of power supplied from the power source 44 to the heater 43, thereby adjusting the temperature in the cylindrical body 4. degree. At this time, the partition plate 7 in the cylindrical body 4 can also be heated by the heater 43.

The cylindrical body 4 has a side opening portion 47 on its side wall, and a film thickness gauge 8 is attached to face the side opening portion 47. The film thickness meter 8 is composed of a crystal vibrator film thickness meter or the like, and automatically measures the film thickness of the film adhered to the surface by vapor deposition. The film thickness meter 8 outputs the film thickness data to the vapor deposition rate controller 37. On the opening surface 41, a correction plate 48 for controlling the flow rate of the vapor deposition material vaporized on the vapor-deposited body 2 from the cylindrical body 4 is provided. The correction plate 48 is provided with a plurality of openings that can be opened and closed freely. These openings are formed at point-symmetric positions centering on the center of gravity of the correction plate 48.

The evaporation source 3 holds the vapor deposition material 32 in the heating container 31 such as a crucible. The heating container 31 is embedded in the tubular body 4 such that the opening side thereof has the same height as the bottom portion 42 of the tubular body 4. In the vacuum vapor deposition apparatus 1 of the present embodiment, a plurality of evaporation sources 3 are disposed at different positions of the bottom portion 42 of the tubular body 4, respectively. Although any material can be used for the vapor deposition material 32, for example, an organic material such as an organic semiconductor material used for an organic electroluminescence device can be suitably used. An evaporation source heater 33 is disposed in a peripheral portion of the heating container 31. The evaporation source heater 33 is connected to the power source 34 to supply power, thereby heating the heating container 31 and the vapor deposition material 32. The heating vessel 31 is provided with a thermometer 35 for measuring the temperature thereof; the measurement information of the thermometer 35 is output to the evaporation source temperature controller 36. The evaporation source temperature controller 36 is connected to the evaporation rate controller 37. The vapor deposition rate controller 37 receives the measurement information of the thermometer 35 to control the amount of electric power supplied from the power source 34 to the evaporation source heater 33, thereby adjusting the temperature in the heating container 31, and measuring the film thickness data of the film thickness meter 8, and Control the evaporation rate.

As shown in FIGS. 2(a) and 2(b), the opening portion 70 of the partitioning plate 7 is provided in a circumferential range of the diameter D centered on the center of gravity P of the planar shape of the partitioning plate 7; the diameter D, The distance between two points on the outer circumference of the partition plate 7 is 2/3 of its maximum value. In other words, the maximum value of the distance between the two points of the partition plate 7 is 3/2 of the diameter D. That is, by making the diameter of the opening portion 70 within the above range, the opening portion 70 can be released to be vapor-deposited. The flux distribution of the gasification material on the body 2 side is the same. When the number of the opening portions 70 of the partitioning plate 7 is one, the diameter of the opening portion 70 is preferably larger than the circumference of the diameter which is 1/10 of the maximum value between the two points on the outer circumference of the partitioning plate 7. When the diameter of the opening portion 70 is within the above range, the vapor deposition material 32 vaporized from the evaporation source 3 is not seriously hindered by the partition plate 7, and can travel to the side of the vapor-deposited body 2.

Further, the opening portion 70 of the partitioning plate 7 is preferably provided to be point-symmetric with respect to the center of gravity P of the partitioning plate 7. In this manner, the vapor deposition material 32 can be uniformly adhered to the vapor-deposited body 2. The opening portion 70 of the partition plate 7 is formed in a geometric shape. It is not limited to a perfect circle as shown in FIGS. 2( a ) and ( b ). For example, as shown in FIGS. 3( a ) to ( d ), it may be an ellipse, a square, a rectangle, or a regular polygon (in the legend). Any one is a regular hexagon. Further, as shown in FIG. 3(e), a plurality of squares and a circular opening portion 70 may be combined. The shape of the opening portion 70 of the partition plate 7 can be selected in accordance with the position of the evaporation source 3 or the vapor deposition rate.

In the vacuum vapor deposition apparatus 1 configured as described above, when the vapor deposition material 32 is deposited on the vapor-deposited body 2, the vapor deposition material 32 is first accommodated in the heating container 31 of each evaporation source 3, and the vacuum pumping is performed. 6 is actuated to decompress the vacuum chamber 5 into a vacuum state. Next, the evaporation source heaters 33 of the respective evaporation sources 3 are heated to heat the respective vapor deposition materials 32, and the cylindrical body 4 and the partition plate 7 are heated so that all the vapor deposition materials 32 are not caused by the heaters 43 or the like. The temperature of gasification and decomposition. On the other hand, when the evaporation source heater 33 of each evaporation source 3 is heated, and each vapor deposition material 32 is vaporized by evaporation or sublimation from melting, the vaporized material to be vaporized is directly or set to be vapor-deposited. The inner wall surface of the cylindrical body 4 at which the material 32 is vaporized and the both sides of the partitioning plate 7 are reflected, and travel toward the opening surface 41 of the cylindrical body 4, are released from the opening of the correction plate 48, and are deposited on the The surface of the body 2 is vapor-deposited.

At this time, the vapor deposition material 32 vaporized from each of the evaporation sources 3 passes through the opening of the partition plate 7 regardless of the position of the vapor deposition body 2 and the evaporation source 3, or the shape or inclination of the evaporation source 3. The portion 70 is closer to the vapor deposition body 2 side than the partition plate 7 of the cylindrical body 4 The area travels. Therefore, in the vicinity of the opening surface 41 of the tubular body 4 on the side of the vapor-deposited body 2, the flux distribution of each vaporized material is the same, and the mixing ratio of each vapor-deposited material 32 can be made on the entire surface of the vapor-deposited body 2. It is uniform.

Further, when the opening portion 70 of the partitioning plate 7 is provided to be point-symmetric with respect to the center of gravity P of the partitioning plate 7, the flux distribution of each vaporized material is centered on the center of gravity of the opening surface 41 of the cylindrical body 4. And integrated into point symmetry. According to the point-symmetric flux distribution, the film thickness deposited on the vapor-deposited body 2 can be made uniform by the correction plate 48 having a predetermined shape.

Regarding which vapor deposition film was formed by using the vacuum vapor deposition device 1 of the present embodiment, simulation was performed using a direct simulation Monte Carlo method. In the cylindrical body 4, a rectangular parallelepiped square tube having an inner wall width of 200 mm, a depth of 100 mm, and a height of 200 mm was used, and the heating temperature of the cylindrical body 4 was 300 °C. Moreover, the two evaporation sources 3 are disposed in the cylindrical body 4 at positions different from each other. One of the evaporation sources 3 (first evaporation source) is located at the center of gravity of the bottom portion 42 of the cylindrical body 4; the opening surface of the heating container 31 having an opening diameter of 30 mm is located at the height of the bottom portion 42 of the tubular body 4. One of the evaporation sources 3 is disposed at the center of gravity of the bottom portion 42 of the tubular body 4; the opening surface of the heating container 31 having an opening diameter of 30 mm is located at the height of the bottom portion 42 of the tubular body 4. The other evaporation source 3 (second evaporation source) is disposed at a position centered on a point shifted by 65 mm from the center of gravity of the bottom portion 42 of the cylindrical body 4 in the width direction of the tubular body 4; and a heating container 31 having an opening diameter of 30 mm. The opening face is located at the height of the bottom portion 42 of the cylindrical body 4.

It is assumed that each of the heating vessels 31 of the first and second evaporation sources contains a (8-hydroxyquinoline) aluminum complex (Alq ₃ ), and the molecular weight, molecular size, evaporation temperature, and the like of the Alq ₃ are Benchmarks to determine the calculation conditions in the simulation. In addition, in the above case, the evaporation rate of each evaporation source 3 is set so that the vapor deposition rate ratio of the first evaporation source 3 and the second evaporation source 3 in the vapor-deposited body 2 is 1:0.1. The plating speed was simulated.

Figure 4 shows the use of a vacuum evaporation apparatus without a partition plate 7, that is, Comparative Example 1 In the vacuum vapor deposition apparatus, the simulation results of the film thickness distribution of the vapor deposition film formed on the vapor-deposited body 2 are obtained. As shown in the figure, it is understood that the film thickness distribution (?) of the vaporized material from the first evaporation source does not coincide with the film thickness distribution (?) from the second evaporation source, and in particular, the second evaporation source has a film thickness distribution biased. shift. At this time, the mixing ratio of the two vapor deposition materials caused a difference of about 10% due to the position on the vapor-deposited body 2.

Fig. 5 shows a simulation result of the film thickness distribution when a vacuum vapor deposition device (Comparative Example 2) having a partition plate 7 at a height of 50 mm from the bottom portion 42 of the cylindrical body 4 is used. The partition plate 7 is divided into the cylindrical body 4 so that the ratio of the space on the side of the evaporation source 3 to the space on the side of the vapor-deposited body 2 is 1:3. The opening 70 of the partition plate 7 has a diameter of 150 mm, and the diameter of the opening 70 is 3/4 with respect to the width (200 mm) of the inner wall of the tubular body 4. As shown in the figure, it is understood that the film thickness distribution (◇) from the second evaporation source is relatively uniform compared to the comparative example 1 shown in FIG. 4 described above, but the film thickness distribution of the vaporized material from the first evaporation source (Δ) ) The film thickness distribution (◇) from the second evaporation source is still inconsistent. At this time, the mixing ratio of the two vapor deposition materials caused a difference of about 8% due to the position on the vapor-deposited body 2.

6 shows a vacuum vapor deposition apparatus in which the diameter of the opening 70 of the partition plate 7 is 133 mm, and the diameter of the opening 70 is 2/3 with respect to the width (200 mm) of the inner wall of the cylindrical body 4 (Example 1). When the film thickness distribution is simulated. As shown in the figure, it is understood that the film thickness distribution (◇) from the second evaporation source is relatively uniform compared to the comparative examples 1 and 2 shown in FIGS. 4 and 5 described above, and the vaporized material from the first evaporation source is The film thickness distribution (?) coincides with the film thickness distribution (?) from the second evaporation source. At this time, the mixing ratio of the two vapor deposition materials caused a difference of about 5% due to the position on the vapor-deposited body 2. That is, the vapor deposition film is uniformly formed on the entire surface of the vapor-deposited body 2.

7 shows a vacuum vapor deposition apparatus in which the diameter of the opening 70 of the partition plate 7 is 100 mm, and the diameter of the opening 70 is 1/2 with respect to the width (200 mm) of the inner wall of the cylindrical body 4 (Example 2). When the film thickness distribution is simulated. As shown in the figure, it is understood that the film thickness distribution (◇) from the second evaporation source is relatively uniform compared to the above-described first embodiment, and the film thickness distribution (?) of the vaporized material from the first evaporation source is from the second Film thickness of the evaporation source The distribution (◇) is consistent. At this time, the mixing ratio of the two vapor deposition materials caused a difference of about 4% due to the position on the vapor-deposited body 2.

8 shows a vacuum vapor deposition apparatus in which the diameter of the opening 70 of the partitioning plate 7 is 30 mm, and the diameter of the opening 70 is 3/20 with respect to the width (200 mm) of the inner wall of the cylindrical body 4 (Example 3). When the film thickness distribution is simulated. As shown in the figure, it is understood that the film thickness distribution (◇) from the second evaporation source is more uniform than in the above-described first and second embodiments, and the film thickness distribution (?) of the vaporized material from the first evaporation source is derived from The film thickness distribution (◇) of the second evaporation source is more uniform. At this time, the mixing ratio of the two vapor deposition materials caused a difference of about 3% due to the position on the vapor-deposited body 2.

As a result of the simulations, it is shown that the opening portion 70 of the partitioning plate 7 is provided in the circumferential range of the diameter D centered on the center of gravity P, and the diameter D is the distance between two points on the outer circumference of the partitioning plate 7. Since the maximum value is 2/3, the flux distribution of the vaporized material released from the opening portion 70 to the vapor-deposited body 2 side can be made the same. Therefore, according to the vacuum vapor deposition apparatus of the present embodiment, even when a plurality of evaporation sources are used, the vapor deposition film formed on the vapor-deposited body 2 is less likely to be uneven, and a vapor deposition film having a desired film thickness can be formed.

A vacuum vapor deposition apparatus according to a modification of the above embodiment will be described with reference to Fig. 9 . In the vacuum vapor deposition apparatus 1 of this modification, the partition plate 7 has the heater 71 as a heating means. The heater 71 is constituted by a jacket heater or the like embedded in the partition plate 7. The heater 71 is also connected to the power source 72 in the same manner as the cylindrical body 4 and the like, and receives power, whereby the partition plate 7 can be heated. Further, a temperature sensor 73 for measuring the temperature of the partition plate 7 itself is provided on the partition plate 7, and measurement information of the temperature sensor 73 is output to the partition plate temperature controller 74. The partition temperature controller 74 controls the amount of electric power supplied from the power source 72 to the heater 71, whereby the temperature of the partition plate 7 can be adjusted. Further, the partition plate temperature controller 74 may be electrically connected to the cylindrical body temperature controller 46 and adjust the temperature of the partitioning plate 7 so that the temperature of the partitioning plate 7 is equal to that of the cylindrical body 4.

When the cylindrical diameter of the cylindrical body 4 is smaller, the size of the partitioning plate 7 is also smaller. Therefore, when the cylindrical body 4 is heated by the heater 43, the heat of the cylindrical body 4 is also thermally conducted to be mounted in a cylindrical shape. a partitioning plate 7 of the inner wall of the body 4. However, if the cylindrical diameter of the cylindrical body 4 is larger, the entire partition plate 7 cannot be heated by the heater 43. Therefore, the heater 71 is housed in the partition plate 7 itself, whereby the deposition of the vapor deposition material 32 on the partition plate 7 can be suppressed, and the opening portion 70 can be prevented from being blocked by the vapor deposition material 32.

A vacuum vapor deposition apparatus according to a second embodiment of the present invention will be described with reference to Figs. 10 to 13 . As shown in FIG. 10 and FIG. 11 , the vacuum vapor deposition device 1 of the present embodiment has an auxiliary opening 75 having an opening area smaller than the opening 70 at an outer circumferential position of the partition plate 7 in a plan view shape.

When the evaporation source 3 is disposed away from the center of the tubular body 4 in plan view, it is difficult to obtain a uniform effect by the opening portion 70 of the partition plate 7. Therefore, in the present embodiment, the auxiliary opening portion 75 is provided at the outer peripheral position of the partition plate 7, whereby the vapor deposition material 32 from the evaporation source 3 disposed far from the center is dispersed in the cylindrical shape through the auxiliary opening portion 75. In the body 4, the distribution of the film thickness adhering to the vapor-deposited body 2 can be optimized. Moreover, since the opening area of the auxiliary opening portion 75 is made smaller than the opening portion 70, the influence of the other evaporation source 3 on the film thickness distribution can be reduced.

The relationship between the position of the evaporation source 3 and the opening 70 of the partition plate and the auxiliary opening 75, and the presence or absence of the auxiliary opening 75 in the partition plate 7 will be described with reference to Figs. 12 and 13 . . Here, as shown in FIG. 12, the first evaporation source 3a is disposed at the center of the tubular body 4 in plan view, and the second evaporation source 3b is disposed at a position 150 mm from the first evaporation source 3a toward the outer peripheral side. Further, the tubular body 4 is a rectangular parallelepiped square tube having an inner wall width of 350 mm, a depth of 100 mm, and a height of 250 mm, and a partition plate 7 is provided at a position of 100 mm from the bottom surface 42 of the cylindrical body 4. The opening area 70 of the partition plate 7 has an opening area of 50 cm ² , and the opening area of the auxiliary opening portion 75 is 5 cm ² .

As shown in Fig. 13, when the auxiliary opening portion 75 is not provided in the partition plate 7, (□), the film thickness distribution of the second evaporation source 3b is shifted, and the film thickness distribution range is 9.5% in the range of ±100 mm in the width direction. . On the other hand, when the auxiliary opening portion 75 is provided at the outer peripheral position of the partition plate 7, the film thickness distribution range is improved to 3.4%. Moreover, since the opening area of the auxiliary opening 75 is 1/10 of the opening 70, the influence of the first evaporation source 3a on the film thickness distribution can be reduced.

A vacuum vapor deposition device according to a third embodiment of the present invention will be described with reference to Figs. 14 and 16 . As shown in Fig. 14, the vacuum vapor deposition apparatus 1 of the present embodiment has a plurality of partition plates, and the partition plates have openings having mutually different shapes. Further, when the shapes of the openings are different from each other, the positions of the openings or the number of the openings in the partition plate are different from each other. Here, the description will be made based on the following configuration. This configuration has a first partitioning plate 7; and a second partitioning plate 9 provided at a predetermined interval from the first partitioning plate 7 on the side of the evaporation source 3. As shown in FIG. 15( a ), the first partition plate 7 has an opening 70 centering on the center of gravity P in the plan view shape of the partition plate 7 . Further, as shown in FIG. 15(b), the second partitioning plate 9 has two opening portions 90 that are symmetrical with respect to the center of gravity P. Each of the openings 70 and 90 is provided in a circumferential range of the diameter D centered on the center of gravity P, and the diameter D is 2/3 of the maximum value between the two points on the outer circumference of the partition plate 7. The distance between the first partitioning plate 7 and the second partitioning plate 9 or the position of each of the openings 70 and 90 is set, for example, as shown in FIG. 16 so as not to interfere with the first partitioning plate 7 The opening 90 of the second partition plate 9 is disposed in a range on a straight line connecting the openings 70 to the respective evaporation sources 3.

As described above, the more the evaporation source 3 disposed at the center when the cylindrical body 4 is viewed from above, the more difficult it is to obtain the uniform thickness distribution of the first partition plate 7 . At this time, for example, in the lower portion of the first partition plate 7, the second partition plate 9 is disposed so as not to interfere with the range on the straight line connecting the opening portion 70 of the first partition plate 7 and each of the evaporation sources 3, respectively. Since the second partitioning plate 9 has two opening portions 90 that are symmetrical with respect to the first partitioning plate 7, the opening portion 90 serves as a virtual evaporating surface, and the effect of uniform film thickness distribution can be improved.

Further, the present invention is not limited to the above embodiment, and various modifications are possible. For example, a drive mechanism that makes the partitioning height of the partitioning plate 7 in the tubular body 4 variable can be provided.

The present application is based on Japanese Patent Application No. 2011-151044, the content of which is incorporated herein by reference in its entirety in its entirety in the the the the the the the

1‧‧‧Vacuum evaporation device

2‧‧‧Extruded body

3, 3a, 3b‧‧‧ evaporation source

31‧‧‧heating container

32‧‧‧vapor deposition materials

33‧‧‧Evaporation source heater

34, 44, 72‧‧‧ power supply

35‧‧‧ thermometer

36‧‧‧Evaporation source temperature controller

37‧‧‧Extruding speed controller

4‧‧‧Cylinder

41‧‧‧Open face

42‧‧‧ bottom

43‧‧‧heater

45‧‧‧Temperature Sensor

46‧‧‧Cylinder temperature controller

47‧‧‧Side opening

48‧‧‧Correction board

5‧‧‧vacuum chamber

6‧‧‧vacuum pump

7, 9‧‧‧ divider

70, 90‧‧‧ openings

71‧‧‧heater (heating mechanism)

73‧‧‧Temperature Sensor (Temperature Adjustment Mechanism)

74‧‧‧Separator temperature controller

75‧‧‧Auxiliary opening

8‧‧‧ Film Thickness Gauge

D‧‧‧diameter

Center of gravity in the top view of the P‧‧ ‧ partition

Fig. 1 is a side sectional view showing a vacuum vapor deposition device according to a first embodiment of the present invention.

2(a) and 2(b) are plan views showing the shapes of the partition plates used in the same device, respectively.

3(a) to 3(e) are plan views showing a modification of the partition plate, respectively.

Fig. 4 is a view showing a simulation result of a film thickness distribution in a vacuum vapor deposition device of a comparative example having no separator.

Fig. 5 is a view showing a simulation result of a film thickness distribution in a vacuum vapor deposition device of a comparative example in which the opening diameter is 3/4 of the separator plate diameter.

Fig. 6 is a view showing a simulation result of a film thickness distribution in a vacuum vapor deposition device of a comparative example in which the opening diameter is 2/3 of the separator diameter.

Fig. 7 is a view showing a simulation result of a film thickness distribution in a vacuum vapor deposition device of an embodiment in which the opening diameter is 1/2 of the diameter of the partition plate.

Fig. 8 is a graph showing the results of simulation of the film thickness distribution in the vacuum vapor deposition apparatus of the embodiment in which the opening diameter is 3/20 of the separator diameter.

Fig. 9 is a side sectional view showing a vacuum vapor deposition apparatus according to a modification of the above embodiment.

Fig. 10 is a side sectional view showing a vacuum vapor deposition device according to a second embodiment of the present invention.

Figure 11 is a plan view showing the shape of a partition plate used in the same device.

Fig. 12 is a perspective view for explaining a relationship position of each configuration of the same embodiment.

Fig. 13 is a view showing a simulation result of a film thickness distribution in a vacuum vapor deposition device of an embodiment in which a partition plate having an auxiliary opening portion is used.

Figure 14 is a side cross-sectional view showing a vacuum vapor deposition device according to a third embodiment of the present invention.

15(a) and 15(b) are plan views showing the shape of a partition plate used in the same apparatus.

Figure 16 is a side cross-sectional view showing the shape of a position of a partition plate used in the same apparatus in relation to an evaporation source.

1‧‧‧Vacuum evaporation device

2‧‧‧Extruded body

3‧‧‧ evaporation source

31‧‧‧heating container

32‧‧‧vapor deposition materials

33‧‧‧Evaporation source heater

34‧‧‧Power supply

35‧‧‧ thermometer

36‧‧‧Evaporation source temperature controller

37‧‧‧Extruding speed controller

4‧‧‧Cylinder

41‧‧‧Open face

42‧‧‧ bottom

43‧‧‧heater

44‧‧‧Power supply

45‧‧‧Temperature Sensor

46‧‧‧Cylinder temperature controller

47‧‧‧Side opening

48‧‧‧Correction board

5‧‧‧vacuum chamber

6‧‧‧vacuum pump

7‧‧‧ partition board

70‧‧‧ openings

8‧‧‧ Film Thickness Gauge

Claims (6)

A vacuum evaporation apparatus comprising: a plurality of evaporation sources for depositing a plurality of types of materials on a vapor-deposited body; a cylindrical body surrounding the plurality of evaporation sources and a space between the vapor-deposited bodies, The vapor deposition body side has an opening surface; and the vacuum chamber has a space in which the vapor deposition body, the evaporation source, and the cylindrical body are disposed; the vacuum evaporation device is characterized by: a partition plate disposed inside the cylindrical body; the partition plate has an opening portion; and the opening portion is provided at least 1 in a circumference of a diameter D centered on a center of gravity of a plan view shape of the partition plate More than one; the diameter D is 2/3 of the maximum value of the distance between two points on the outer circumference of the partition plate. The vacuum evaporation apparatus of claim 1, wherein the opening is formed in a geometric shape. The vacuum vapor deposition device according to claim 1 or 2, wherein the partition plate has an auxiliary opening portion having an opening area smaller than the opening portion at an outer circumferential position in a plan view shape. The vacuum vapor deposition device according to claim 1 or 2, wherein the opening portion is formed to be point-symmetric with respect to a center of gravity of the partition plate. A vacuum vapor deposition apparatus according to claim 1 or 2, comprising: a plurality of the partition plates; the plurality of partition plates having openings having mutually different shapes. A vacuum evaporation apparatus according to claim 1 or 2, wherein the partitioning plate has a heating mechanism and a temperature adjustment mechanism.