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JP6686069B2 - Evaporation source device, vapor deposition device, and vapor deposition system - Google Patents

Evaporation source device, vapor deposition device, and vapor deposition system Download PDF

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JP6686069B2
JP6686069B2 JP2018102198A JP2018102198A JP6686069B2 JP 6686069 B2 JP6686069 B2 JP 6686069B2 JP 2018102198 A JP2018102198 A JP 2018102198A JP 2018102198 A JP2018102198 A JP 2018102198A JP 6686069 B2 JP6686069 B2 JP 6686069B2
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container
vapor deposition
cooling
source device
evaporation source
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JP2019206733A (en
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由季 菅原
由季 菅原
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Canon Tokki Corp
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225Oblique incidence of vaporised material on substrate
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/243Crucibles for source material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/26Vacuum evaporation by resistance or inductive heating of the source
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Description

本発明は、蒸発源装置、蒸着装置、および蒸着システムに関する。   The present invention relates to an evaporation source device, a vapor deposition device, and a vapor deposition system.

近年、ディスプレイの一種として、有機材料の電界発光を用いた有機EL素子を備えた有機EL装置が注目を集めている。かかる有機ELディスプレイ等の有機電子デバイス製造において、蒸発源装置を用いて、基板上に有機材料や金属電極材料などの蒸着材料を蒸着させて成膜を行う工程がある。   In recent years, as one kind of display, an organic EL device including an organic EL element using electroluminescence of an organic material has been attracting attention. In manufacturing an organic electronic device such as an organic EL display, there is a step of depositing a vapor deposition material such as an organic material or a metal electrode material on a substrate using an evaporation source device to form a film.

特許文献1の蒸着装置では、蒸発源装置を構成する容器の内部に発生した有機材料の蒸気は、該容器の開口から放出されると、蒸気調整部材によって規定される放出口を通って真空槽の内部に放出される。さらに、該蒸気調整部材の上には、筒状の防着板が、筒の一端を基板ホルダ側に向け、他端を放出口に向けた状態で配置されている。放出口から放出された有機材料の蒸気は、筒状の防着板の内部を通り、基板ホルダ側の端部の開口から放出される。   In the vapor deposition device of Patent Document 1, when the vapor of the organic material generated inside the container constituting the evaporation source device is discharged from the opening of the container, it passes through the discharge port defined by the steam adjusting member to form a vacuum chamber. Is released inside. Further, on the vapor adjusting member, a tubular deposition preventing plate is arranged with one end of the cylinder facing the substrate holder side and the other end facing the discharge port. The vapor of the organic material discharged from the discharge port passes through the inside of the cylindrical deposition preventive plate and is discharged from the opening at the end portion on the substrate holder side.

特開2005−325391号公報JP, 2005-325391, A

特許文献1に記載の防着板は、蒸着材料の放射角度を制限する制限部材として機能する。防着板には、輻射によって直接的に、あるいは有機材料の蒸気を介して間接的に、容器または容器を加熱するヒータからの熱が加わる。防着板に熱が加わると、その熱によって成膜対象の基板が加熱されてしまう可能性がある。成膜対象の基板が過度に加熱されると、基板上に形成されている回路や画素が損傷してしまう可能性があるため、好ましくない。   The deposition preventive plate described in Patent Document 1 functions as a limiting member that limits the radiation angle of the vapor deposition material. Heat from a container or a heater that heats the container is applied to the deposition preventive plate directly by radiation or indirectly through the vapor of the organic material. When heat is applied to the deposition preventive plate, the heat may heat the substrate to be film-formed. If the substrate to be film-formed is excessively heated, circuits and pixels formed on the substrate may be damaged, which is not preferable.

そこで本発明では、上述の課題に鑑み、制限部材の温度上昇を抑制することを目的とする。   Therefore, in view of the above-mentioned problems, the present invention aims to suppress the temperature rise of the limiting member.

本発明の一側面としての蒸発源装置は、蒸着材料を収容する容器と、冷却部材と、前記容器の開口から放出される蒸着材料の放射角度を一定の角度以下に制限する制限部材と、を備える蒸発源装置であって、前記制限部材は、前記冷却部材と対向する対向面を有し、
前記容器は、固体状態または液体状態の前記蒸着材料を収容する収容部と、前記開口と前記収容部との間に配置され、前記収容部と連通し、気体状態の前記蒸着材料を収容する蒸発部と、前記収容部と前記蒸発部との間に配置され、前記収容部および前記蒸発部のそれぞれと連通する中間部と、を有し、前記開口の開口面の法線方向を含み、前記対向面に垂直な断面において、前記冷却部材は、前記容器の少なくとも一部を挟むように配置され、前記制限部材は、前記冷却部材の少なくとも一部を挟むように配置され、前記中間部の幅は、前記蒸発部の幅および前記収容部の幅よりも小さいことを特徴とする。
本発明の別の一側面としての蒸発源装置は、蒸着材料をそれぞれ収容する複数の容器と、複数の冷却部材と、前記複数の容器のそれぞれの開口から放出される蒸着材料の放射角度を一定の角度以下にそれぞれ制限する複数の制限部材と、を備える蒸発源装置であって、前記複数の制限部材のそれぞれは、前記冷却部材のそれぞれと対向する対向面を有し、前記複数の容器のそれぞれについて、前記開口の開口面の法線方向を含み、前記対向面に垂直な断面において、前記複数の冷却部材のそれぞれは、前記複数の容器のそれぞれの少なくとも一部を挟むように配置され、前記複数の制限部材のそれぞれは、前記複数の冷却部材のそれぞれの少なくとも一部を挟むように配置され、前記複数の容器は並んで配置されており、隣り合う2つの前記容器のそれぞれに対応する2つの前記制限部材は、対向して配置されることを特徴とする。
本発明の別の一側面としての蒸発源装置は、蒸着材料を収容する容器と、冷却部材と、前記容器の開口から放出される蒸着材料の放射角度を一定の角度以下に制限する制限部材と、を備える蒸発源装置であって、前記制限部材は、前記冷却部材と対向する対向面を有し、前記冷却部材は、前記蒸発部の少なくとも一部を取り囲む第1の冷却部と、前記収容部の少なくとも一部を取り囲む第2の冷却部と、を有し、前記容器は、固体状態または液体状態の前記蒸着材料を収容する収容部と、前記開口と前記収容部との間に配置され、前記収容部と連通し、気体状態の前記蒸着材料を収容する蒸発部と、を含み、前記開口の開口面の法線方向を含み、前記対向面に垂直な断面において、前記冷却部材は、前記容器の少なくとも一部を挟むように配置され、前記制限部材は、前記冷却部材の少なくとも一部を挟むように配置され、前記蒸発部の前記対向面に垂直な方向の幅は、前記収容部の前記対向面に垂直な方向の幅よりも小さく、前記第1の冷却部の前記対向面に垂直な方向における幅は、前記第2の冷却部の前記対向面に垂直な方向における幅よりも小さいことを特徴とする。
本発明の別の一側面としての蒸発源装置は、蒸着材料を収容する容器と、冷却部材と、前記容器の開口から放出される蒸着材料の放射角度を一定の角度以下に制限する制限部材と、を備える蒸発源装置であって、前記制限部材は、前記冷却部材と対向する対向面を有し、前記開口の開口面の法線方向を含み、前記対向面に垂直な断面において、前記冷却部材は、前記容器の少なくとも一部を挟むように配置され、前記制限部材は、前記冷却部材の少なくとも一部を挟むように配置され、前記容器は、前記開口を形成するノズル部を含み、前記ノズル部は、前記容器の第1の面に対して突出して設けられ、前記冷却部材は、前記容器の前記第1の面に対向して配置される対向部を含み、前記制限部材は、前記対向部に対向するように延在する延在部を含むことを特徴とする。
本発明の別の一側面としての蒸発源装置は、蒸着材料を収容する容器と、冷却部材と、前記容器の開口から放出される蒸着材料の放射角度を一定の角度以下に制限する制限部材と、を備える蒸発源装置であって、前記制限部材は、前記冷却部材と対向する対向面を有し、前記開口の開口面の法線方向を含み、前記対向面に垂直な断面において、前記冷却部材は、前記容器の少なくとも一部を挟むように配置され、前記制限部材は、前記冷却部材の少なくとも一部を挟むように配置され、前記容器は、固体状態または液体状態の前記蒸着材料を収容する収容部と、前記開口と前記収容部との間に配置され、前記収容部と連通し、気体状態の前記蒸着材料を収容する蒸発部と、を含み、前記容器の前記収容部には、前記蒸着材料を収容するための坩堝部材と、前記坩堝部材の上部に配置された仕切部材が配置されることを特徴とする。
An evaporation source device according to one aspect of the present invention includes a container that contains a vapor deposition material, a cooling member, and a limiting member that limits the radiation angle of the vapor deposition material emitted from the opening of the container to a certain angle or less. An evaporation source device comprising, wherein the limiting member has a facing surface facing the cooling member,
The container is disposed between the container for accommodating the vapor deposition material in a solid state or a liquid state, the opening and the container, communicates with the container, and evaporates to accommodate the vapor deposition material in a gas state. A portion, an intermediate portion that is disposed between the accommodation portion and the evaporation portion, and communicates with each of the accommodation portion and the evaporation portion, and includes a normal direction of an opening surface of the opening, In a cross section perpendicular to the facing surface, the cooling member is arranged so as to sandwich at least a part of the container, the limiting member is arranged so as to sandwich at least a part of the cooling member, and the width of the intermediate portion. Is smaller than the width of the evaporating portion and the width of the accommodating portion .
An evaporation source device as another aspect of the present invention has a plurality of containers each containing a vapor deposition material, a plurality of cooling members, and a constant radiation angle of the vapor deposition material emitted from each opening of the plurality of containers. A plurality of limiting members each of which is limited to an angle of less than or equal to, and each of the plurality of limiting members has a facing surface that faces each of the cooling members, For each, including the normal direction of the opening surface of the opening, in a cross section perpendicular to the facing surface, each of the plurality of cooling members are arranged to sandwich at least a part of each of the plurality of containers, each of the plurality of limiting members, arranged so as to sandwich each of the at least a portion of said plurality of cooling members, wherein the plurality of containers are arranged side by side, two adjacent said Two of the restriction member corresponding to each of the vessel is characterized in that it is arranged to face.
An evaporation source device as another aspect of the present invention is a container that contains a vapor deposition material, a cooling member, and a limiting member that limits the radiation angle of the vapor deposition material emitted from the opening of the container to a certain angle or less. And a first cooling unit surrounding at least a part of the evaporation unit, wherein the limiting member has a facing surface facing the cooling member. A second cooling portion surrounding at least a part of the portion, and the container is disposed between the storage portion that stores the vapor deposition material in a solid state or a liquid state, and the opening and the storage portion. A section including a vaporization section that communicates with the accommodation section and accommodates the vapor deposition material in a gas state, includes a normal direction of an opening surface of the opening, and is perpendicular to the facing surface, the cooling member is Arrange so that at least a part of the container is sandwiched The limiting member is arranged so as to sandwich at least a part of the cooling member, and a width of the evaporation portion in a direction perpendicular to the facing surface is smaller than a width of the evaporator in a direction perpendicular to the facing surface. The width in the direction perpendicular to the facing surface of the first cooling unit is smaller than the width in the direction perpendicular to the facing surface of the second cooling unit.
An evaporation source device as another aspect of the present invention is a container that contains a vapor deposition material, a cooling member, and a limiting member that limits the radiation angle of the vapor deposition material emitted from the opening of the container to a certain angle or less. In the evaporation source device, the limiting member has a facing surface facing the cooling member, includes a direction normal to the opening surface of the opening, and includes the cooling in a cross section perpendicular to the facing surface. The member is arranged so as to sandwich at least a part of the container, the limiting member is arranged so as to sandwich at least a part of the cooling member, and the container includes a nozzle portion that forms the opening, The nozzle portion is provided so as to project from the first surface of the container, the cooling member includes a facing portion that is arranged to face the first surface of the container, and the limiting member is the The extension that extends to face the facing portion Characterized in that it comprises a part.
An evaporation source device as another aspect of the present invention is a container that contains a vapor deposition material, a cooling member, and a limiting member that limits the radiation angle of the vapor deposition material emitted from the opening of the container to a certain angle or less. In the evaporation source device, the limiting member has a facing surface facing the cooling member, includes a normal direction of the opening surface of the opening, and includes the cooling member in a cross section perpendicular to the facing surface. The member is arranged so as to sandwich at least a part of the container, the limiting member is arranged so as to sandwich at least a part of the cooling member, and the container contains the vapor deposition material in a solid state or a liquid state. A containing part, which is disposed between the opening and the containing part, communicates with the containing part, and includes an evaporating part that contains the vapor deposition material in a gaseous state, and the containing part of the container includes: For containing the vapor deposition material And堝部material, the upper part arranged partition member of the crucible member is being arranged.

本発明によれば、制限部材の温度上昇を抑制することができる。   According to the present invention, the temperature rise of the restriction member can be suppressed.

蒸着装置の模式的断面図Schematic cross-sectional view of vapor deposition device 実施例1の蒸発源装置の模式図Schematic diagram of the evaporation source device of Example 1 実施例2の蒸発源装置の模式図Schematic diagram of the evaporation source device of Example 2 実施例3の蒸発源装置の模式図Schematic diagram of the evaporation source device of Example 3 実施例4の蒸発源装置の模式図Schematic diagram of the evaporation source device of Example 4 実施例5の蒸発源装置の模式図Schematic diagram of the evaporation source device of Example 5 有機EL表示装置の説明図Illustration of organic EL display device

以下に図面を参照して、この発明を実施するための形態を、実施例に基づいて例示的に詳しく説明する。ただし、この実施の形態に記載されている構成部品の寸法、材質、形状それらの相対配置などは、発明が適用される装置の構成や各種条件により適宜変更されるべきものである。すなわち、この発明の範囲を以下の実施の形態に限定する趣旨のものではない。なお、以下で説明する各実施例を適宜組み合わせたものも、本発明の範囲に含まれることは言うまでもない。   MODES FOR CARRYING OUT THE INVENTION Modes for carrying out the present invention will be exemplarily described in detail below based on embodiments with reference to the drawings. However, the dimensions, materials, shapes, and relative arrangements of the components described in this embodiment should be appropriately changed depending on the configuration of the apparatus to which the invention is applied and various conditions. That is, the scope of the present invention is not intended to be limited to the following embodiments. Needless to say, a combination of the respective embodiments described below is appropriately included in the scope of the present invention.

[実施例1]
<真空装置の概略構成>
図1は、蒸着装置(成膜装置)100の構成を示す模式図である。蒸着装置100は、真空チャンバ200を有する。真空チャンバ200の内部は、減圧雰囲気に維持される。真空チャンバ200の内部には、被処理体設置台(基板ホルダ)210によって保持された被処理体である基板10と、マスク220と、蒸発源装置240が設けられる。被処理体設置台210は、基板10を載置するための受け爪などの支持具や、基板を押圧保持するためのクランプなどの押圧具を備え、基板を保持する。
[Example 1]
<Schematic configuration of vacuum device>
FIG. 1 is a schematic diagram showing a configuration of a vapor deposition device (film forming device) 100. The vapor deposition device 100 has a vacuum chamber 200. The inside of the vacuum chamber 200 is maintained in a reduced pressure atmosphere. Inside the vacuum chamber 200, the substrate 10, which is the object to be processed held by the object installation base (substrate holder) 210, the mask 220, and the evaporation source device 240 are provided. The processing object installation base 210 includes a support tool such as a receiving claw for mounting the substrate 10 and a pressing tool such as a clamp for pressing and holding the substrate, and holds the substrate.

基板10は、基板搬送装置に配置される搬送ロボット(不図示)により真空チャンバ200内に搬送されたのち、被処理体設置台210によって保持され、成膜時には水平面(XY平面)と平行となるよう固定される。基板搬送装置には、蒸着装置100を含む複数の蒸着装置が接続され、蒸着システムを構築している。マスク220は、基板10上に形成する所定パターンの薄膜パターンに対応する開口パターンをもつマスクであり、例えばメタルマスクである。成膜時にはマスク220の上に基板10が載置される。   The substrate 10 is transferred into the vacuum chamber 200 by a transfer robot (not shown) arranged in the substrate transfer device, and then is held by the object-to-be-processed table 210, and is parallel to the horizontal plane (XY plane) during film formation. So that it is fixed. A plurality of vapor deposition apparatuses including the vapor deposition apparatus 100 are connected to the substrate transfer apparatus to construct a vapor deposition system. The mask 220 is a mask having an opening pattern corresponding to a predetermined thin film pattern formed on the substrate 10, and is, for example, a metal mask. The substrate 10 is placed on the mask 220 during film formation.

真空チャンバ200内には、その他、基板10の温度上昇を抑制する冷却板(不図示)を備えていてもよい。また、真空チャンバ200の上には、基板10およびマスク220の少なくとも一方をアライメントするためのアライメント機構(不図示)を備えていてもよい。アライメント機構は、例えば、基板10およびマスク220の少なくとも一方をX方向またはY方向に移動させるアクチュエータや、基板10およびマスク220の少なくとも一方を保持するためのクランプ機構用アクチュエータなどの駆動手段を備えていてもよい。また、アライメント機構は、基板10およびマスク220の少なくとも一方を撮像するカメラを備えていてもよい。   In the vacuum chamber 200, in addition, a cooling plate (not shown) that suppresses the temperature rise of the substrate 10 may be provided. An alignment mechanism (not shown) for aligning at least one of the substrate 10 and the mask 220 may be provided on the vacuum chamber 200. The alignment mechanism includes driving means such as an actuator that moves at least one of the substrate 10 and the mask 220 in the X direction or the Y direction, and a clamp mechanism actuator that holds at least one of the substrate 10 and the mask 220. May be. Further, the alignment mechanism may include a camera that images at least one of the substrate 10 and the mask 220.

蒸発源装置240は、蒸着材料242を収容して保持する容器400と、蒸着材料242を加熱し、蒸着材料242の蒸気を容器400の開口から放出させるために、容器40
0を加熱する加熱部430を備える。その他の各構成要素については、後ほど詳しく述べる。蒸着装置100は、蒸発源装置240の他に、蒸着材料242の放出を抑えるシャッタや、基板10に形成された膜の膜厚を計測するための膜厚モニタなどを備えていてよい(いずれも不図示)。また、蒸着装置100は、成膜を一様に行うために蒸発源装置240を移動させる、移動機構250を備えてもよい。移動機構250は、蒸発源装置240をXY方向、すなわち、基板10の基板面に平行な方向に移動させる機構であることが好ましいが、これに限定はされず、Z方向、すなわち基板10の基板面に垂直な方向に移動させる機構であってもよい。移動機構250は、蒸発源装置240を搭載できる構成が好ましい。なお、図1における蒸発源装置240の各構成要素の形状、位置関係、サイズ比は例示にすぎない。
The evaporation source device 240 includes a container 400 for accommodating and holding the vapor deposition material 242, a container 40 for heating the vapor deposition material 242, and discharging vapor of the vapor deposition material 242 from an opening of the container 400.
A heating unit 430 for heating 0 is provided. Each of the other components will be described later in detail. In addition to the evaporation source device 240, the vapor deposition device 100 may include a shutter that suppresses the release of the vapor deposition material 242, a film thickness monitor for measuring the film thickness of the film formed on the substrate 10 (both of which are provided). (Not shown). Further, the vapor deposition device 100 may include a moving mechanism 250 that moves the evaporation source device 240 to uniformly form a film. The moving mechanism 250 is preferably a mechanism that moves the evaporation source device 240 in the XY directions, that is, in the direction parallel to the substrate surface of the substrate 10, but is not limited thereto, and the Z direction, that is, the substrate of the substrate 10. A mechanism for moving in a direction perpendicular to the plane may be used. The moving mechanism 250 is preferably configured so that the evaporation source device 240 can be mounted. The shape, positional relationship, and size ratio of each constituent element of the evaporation source device 240 in FIG. 1 are merely examples.

容器400の材質としては、例えば、セラミック、金属、カーボン材料などを用いることができるが、これに限定されず、蒸着材料242の物性や加熱部430による加熱温度との関係で好ましいものを用いる。中でも、容器400の材質としては、タングステン、レニウム、タンタル、モリブデン、ニオブ、バナジウム、ハフニウム、ジルコニウム、チタンなどの高融点金属、あるいは上記金属を含む合金が好ましい。ここで、高融点金属とは、鉄の融点より高い融点を有する金属を指す。   As a material of the container 400, for example, a ceramic, a metal, a carbon material, or the like can be used, but the material is not limited thereto, and a preferable material is used in consideration of the physical properties of the vapor deposition material 242 and the heating temperature of the heating unit 430. Above all, as a material of the container 400, a refractory metal such as tungsten, rhenium, tantalum, molybdenum, niobium, vanadium, hafnium, zirconium, or titanium, or an alloy containing the above metal is preferable. Here, the refractory metal refers to a metal having a melting point higher than that of iron.

加熱部430としては、例えば、シース加熱部や金属ワイヤ線などの抵抗加熱式の加熱部が挙げられるが、これに限定されず、蒸着材料242を蒸発させる加熱性能があればよい。また加熱部の形状についても、図1のようなプレート状のほか、ワイヤ状、メッシュ状など任意の形状を採用できる。蒸着時には、加熱部430の温度は、蒸着材料242が気体状態となるような温度に制御されることが好ましく、250℃以上1400℃以下となるように制御されることが好ましい。蒸着時には、加熱部430の温度は、蒸着材料242が有機材料の場合には250℃以上450℃以下となるように制御されることが好ましく、蒸着材料242が金属材料の場合には650℃以上1400℃以下となるように制御されることが好ましい。   Examples of the heating unit 430 include a sheath heating unit and a resistance heating type heating unit such as a metal wire wire. However, the heating unit 430 is not limited to this and may have a heating performance for evaporating the vapor deposition material 242. As for the shape of the heating portion, any shape such as a wire shape or a mesh shape can be adopted in addition to the plate shape as shown in FIG. During vapor deposition, the temperature of the heating unit 430 is preferably controlled to a temperature at which the vapor deposition material 242 is in a gas state, and is preferably controlled to 250 ° C. or higher and 1400 ° C. or lower. During vapor deposition, the temperature of the heating unit 430 is preferably controlled to be 250 ° C. or higher and 450 ° C. or lower when the vapor deposition material 242 is an organic material, and 650 ° C. or higher when the vapor deposition material 242 is a metal material. It is preferable that the temperature is controlled to 1400 ° C. or lower.

蒸着装置100は、制御部270を有する。制御部270は、蒸発源装置240の制御、例えば、加熱の開始や終了のタイミング制御、温度制御、シャッタを設ける場合はその開閉タイミング制御、移動機構250を設ける場合はその移動制御などを行う。なお、複数の制御手段を組み合わせて制御部270を構成してもよい。複数の制御手段とは、例えば、加熱制御手段、シャッタ制御手段、蒸発源移動機構の移動制御手段などである。制御部270は、基板10の搬送およびアライメント制御手段など、蒸発源装置240以外の機構の制御手段を兼ねていてもよい。   The vapor deposition device 100 has a control unit 270. The control unit 270 controls the evaporation source device 240, for example, timing control of start and end of heating, temperature control, opening / closing timing control when a shutter is provided, and movement control when a moving mechanism 250 is provided. The control unit 270 may be configured by combining a plurality of control means. The plurality of control means are, for example, heating control means, shutter control means, movement control means of the evaporation source movement mechanism, and the like. The control unit 270 may also serve as a control unit for a mechanism other than the evaporation source device 240, such as a conveyance and alignment control unit for the substrate 10.

制御部270は、例えば、プロセッサ、メモリ、ストレージ、I/O、UIなどを有するコンピュータにより構成可能である。この場合、制御部270の機能は、メモリまたはストレージに記憶されたプログラムをプロセッサが実行することにより実現される。コンピュータとしては、汎用のコンピュータを用いてもよいし、組込型のコンピュータ又はPLC(programmable logic controller)を用いてもよい。あるいは、制御部270の機能の一部または全部をASICやFPGAのような回路で構成してもよい。なお、蒸着装置ごとに制御部270が設けられていてもよいし、1つの制御部270が複数の蒸着装置を制御してもよい。   The control unit 270 can be configured by, for example, a computer having a processor, memory, storage, I / O, UI, and the like. In this case, the function of the control unit 270 is realized by the processor executing the program stored in the memory or the storage. As the computer, a general-purpose computer may be used, or an embedded computer or a programmable programmable controller (PLC) may be used. Alternatively, some or all of the functions of the control unit 270 may be configured by a circuit such as an ASIC or FPGA. Note that the control unit 270 may be provided for each vapor deposition device, or one control unit 270 may control a plurality of vapor deposition devices.

容器400内部に蒸着材料242が収容され、基板10のマスク220への載置(あるいはマスク220の基板10への載置)やアライメントなどの準備が完了すると、制御部270の制御によって加熱部430が動作を開始し、蒸着材料242が加熱される。温度が十分に高まると、蒸着材料242が蒸発し、容器400の開口401から気体状態の蒸着材料242が放出され、基板10の表面に付着し、膜を形成する。容器400から放出
される蒸着材料242は、蒸着材料242の気体(蒸気)であり、この蒸気は加熱部430によって加熱されている。複数の容器に別種の蒸着材料をそれぞれ収容しておくことで、共蒸着を行うことも可能である。
When the vapor deposition material 242 is housed inside the container 400 and preparations such as placement of the substrate 10 on the mask 220 (or placement of the mask 220 on the substrate 10) and alignment are completed, the heating unit 430 is controlled by the control unit 270. Starts to heat the vapor deposition material 242. When the temperature rises sufficiently, the vapor deposition material 242 evaporates, the vaporized vapor deposition material 242 is released from the opening 401 of the container 400, and adheres to the surface of the substrate 10 to form a film. The vapor deposition material 242 released from the container 400 is a gas (vapor) of the vapor deposition material 242, and this vapor is heated by the heating unit 430. Co-deposition can be performed by accommodating different types of vapor deposition materials in a plurality of containers.

形成された膜の膜厚を膜厚モニタ(不図示)等で測定しながら制御を行うことで、基板上に所望の厚さを持った膜が形成される。一様な厚さで成膜するために、例えば、基板10を回転させたり、移動機構250により蒸発源装置240を移動させたりしながら蒸着を行ってもよい。また、基板10の大きさによっては、複数の容器400を並行して加熱することも好ましい。   A film having a desired thickness is formed on the substrate by controlling the film thickness of the formed film while measuring the film thickness with a film thickness monitor (not shown) or the like. In order to form a film with a uniform thickness, for example, vapor deposition may be performed while rotating the substrate 10 or moving the evaporation source device 240 by the moving mechanism 250. Further, depending on the size of the substrate 10, it is also preferable to heat the plurality of containers 400 in parallel.

容器400の形状は任意である。蒸発源装置240は、蒸着材料242を放出する開口が一つである点状の蒸発源装置であってもよいし、蒸着材料242を放出する開口を複数有しており、複数の開口が一列に配列された線状の蒸発源装置であってもよい。あるいは、蒸着材料242を放出する開口を複数有し、複数の開口が二次元的に面状に配列された面状の蒸発源装置であってもよいし、点状の蒸発源装置を複数用意し、材料がなくなった場合に使用する蒸発源装置を交換するリボルバ式の蒸発源装置であってもよい。   The shape of the container 400 is arbitrary. The evaporation source device 240 may be a dot-shaped evaporation source device having one opening for discharging the vapor deposition material 242, or may have a plurality of openings for discharging the vapor deposition material 242, and the plurality of openings are arranged in a row. It may be a linear evaporation source device arranged in a line. Alternatively, it may be a planar evaporation source device having a plurality of openings for discharging the vapor deposition material 242, and the plurality of openings are arranged two-dimensionally in a planar manner, or a plurality of point-like evaporation source devices may be prepared. However, it may be a revolver type evaporation source device that replaces the evaporation source device used when the material runs out.

後述するように、ある種類の蒸着材料が成膜された基板上に別種の蒸着材料を成膜することで、複層構造を形成できる。その場合、容器内の蒸着材料を交換したり、容器自体を別種の蒸着材料が格納されたものに交換したりしてもよい。また、真空チャンバ内に複数の蒸発源装置を設けて交換しながら用いてもよいし、基板10を現在の蒸着装置から搬出し、別種の蒸着材料が収納された蒸発源装置を備える他の蒸着装置に搬入してもよい。   As described later, a multilayer structure can be formed by depositing another type of vapor deposition material on a substrate on which a certain type of vapor deposition material is deposited. In that case, the vapor deposition material in the container may be exchanged, or the vessel itself may be exchanged for one in which another type of vapor deposition material is stored. Further, a plurality of evaporation source devices may be provided in the vacuum chamber and used while being exchanged, or the substrate 10 is carried out from the current evaporation device and another evaporation device having an evaporation source device in which another kind of evaporation material is stored. It may be loaded into the device.

<蒸発源装置の詳細構成>
図2(a)は、本実施形態の蒸発源装置240の構成を説明するための概略断面図である。図2(b)は、線状の蒸発源装置240の概略上面図であり、図2(c)は、点状の蒸発源装置240の概略上面図である。図2(b)、(c)のA−A断面が、図2(a)で示されている。なお、A−A断面は、後述する容器400の開口401の開口面の法線方向を含み、制限部材410の冷却部材420と対向する対向面に垂直な断面である。図2(a)〜(c)の図1と共通する構成については同じ符号を付し、説明を簡略化する。
<Detailed configuration of evaporation source device>
FIG. 2A is a schematic cross-sectional view for explaining the configuration of the evaporation source device 240 of this embodiment. FIG. 2B is a schematic top view of the linear evaporation source device 240, and FIG. 2C is a schematic top view of the point evaporation source device 240. The AA cross section of FIGS. 2B and 2C is shown in FIG. Note that the AA cross section is a cross section that includes the normal direction of the opening surface of the opening 401 of the container 400 described below and is perpendicular to the facing surface of the limiting member 410 that faces the cooling member 420. 2 (a) to 2 (c) that are common to FIG. 1 are assigned the same reference numerals to simplify the description.

蒸発源装置240は、容器400、制限部材410、冷却部材420、加熱部430、反射部材440を備える。容器400は、蒸着材料を保持する。本実施例では、容器400は、タンタルで構成される。容器400をタンタルで構成することで、加熱部430による加熱温度を1400℃にまで上げても、容器400の変形を抑制することができる。容器400の側面には、加熱部430が設けられ、容器400内に保持された蒸着材料を加熱し、容器400に設けられた開口401から気体状態の蒸着材料を放出する。本実施例の加熱部430は、容器400側面のみに配置されているが、容器400の上面や底面にも設けてもよい。   The evaporation source device 240 includes a container 400, a limiting member 410, a cooling member 420, a heating unit 430, and a reflecting member 440. The container 400 holds a vapor deposition material. In this embodiment, the container 400 is made of tantalum. By configuring the container 400 with tantalum, the deformation of the container 400 can be suppressed even when the heating temperature by the heating unit 430 is raised to 1400 ° C. A heating unit 430 is provided on the side surface of the container 400 to heat the vapor deposition material held in the container 400 and release the vapor deposition material from the opening 401 provided in the container 400. Although the heating unit 430 of the present embodiment is arranged only on the side surface of the container 400, it may be provided on the upper surface or the bottom surface of the container 400.

冷却部材420は、蒸着材料を加熱する熱により、真空チャンバ内全体の温度が上昇することを防ぐために、蒸着材料が保持される容器400の少なくとも一部を覆うように配置される。本実施例では、冷却部材420は、容器400と加熱部430を取り囲むように設けられている。冷却部材420の内部には、冷却用の液体を流動させるための流路(不図示)が設けられ、冷却部材420を冷却する。本実施例では、冷却部材420は、ステンレスで構成される。   The cooling member 420 is arranged so as to cover at least a part of the container 400 in which the vapor deposition material is held in order to prevent the temperature of the entire vacuum chamber from rising due to the heat of heating the vapor deposition material. In this embodiment, the cooling member 420 is provided so as to surround the container 400 and the heating unit 430. Inside the cooling member 420, a flow path (not shown) for flowing the cooling liquid is provided to cool the cooling member 420. In this embodiment, the cooling member 420 is made of stainless steel.

反射部材440は、加熱部430と冷却部材420との間に配置される。反射部材440は、冷却部材420により冷却され、冷却部材420と同様に蒸着材料を加熱する熱により、真空チャンバ内全体の温度が上昇することを防ぐ。本実施例では、反射部材440
は、モリブデンで構成されるが、タングステン、イリジウム、ルデニウム等の材料で構成されてもよい。また、反射部材440は、複数枚で構成され、それぞれの反射部材の間に空間を設ける構造としてもよい。
The reflection member 440 is arranged between the heating unit 430 and the cooling member 420. The reflecting member 440 is cooled by the cooling member 420, and prevents the temperature of the entire vacuum chamber from rising due to the heat of heating the vapor deposition material as with the cooling member 420. In this embodiment, the reflection member 440
Is composed of molybdenum, but may be composed of a material such as tungsten, iridium, or ruthenium. The reflecting member 440 may be composed of a plurality of sheets, and a space may be provided between the reflecting members.

制限部材410は、容器400の開口401から放出される気体状の蒸着材料の放射角度を一定の角度以下に制限する機能を有する。制限部材410は、図2のA−A断面において容器400を挟むように配置され、容器400の開口端部から蒸着材料が放出する方向に延びる構成になっている。容器400から放出された蒸着材料は、制限部材410によって、放射角度が一定の角度以下に制限される。これにより、蒸着装置において蒸着を行う際の、蒸着材料の基板10への入射角度を一定の角度以下に制限することができ、マスク220を介した成膜におけるパターニング精度を高めることができる。また、蒸着材料が、真空チャンバ200の壁面など、基板10およびマスク220以外の部分に付着してしまうことを抑制することができる。なお、本明細書において、放射角度とは、容器の開口から放射される蒸着材料の放射方向と、容器の開口の法線とがなす角度をいう。また、本明細書において、入射角度とは、基板に入射する蒸着材料の入射方向と、基板の基板面の法線とがなす角度をいう。   The limiting member 410 has a function of limiting the radiation angle of the vapor deposition material in the form of gas discharged from the opening 401 of the container 400 to a certain angle or less. The limiting member 410 is arranged so as to sandwich the container 400 in the AA cross section of FIG. 2, and is configured to extend from the opening end of the container 400 in the direction in which the vapor deposition material is discharged. The emission angle of the vapor deposition material released from the container 400 is limited to a certain angle or less by the limiting member 410. This makes it possible to limit the incident angle of the vapor deposition material to the substrate 10 to a certain angle or less when performing vapor deposition in the vapor deposition apparatus, and improve the patterning accuracy in film formation via the mask 220. Further, it is possible to prevent the vapor deposition material from adhering to a portion other than the substrate 10 and the mask 220, such as the wall surface of the vacuum chamber 200. In this specification, the radiation angle means an angle formed by the radiation direction of the vapor deposition material emitted from the opening of the container and the normal line of the opening of the container. In this specification, the incident angle means an angle formed by the incident direction of the vapor deposition material which is incident on the substrate and the normal line of the substrate surface of the substrate.

本実施形態では、制限部材410は、図2のA−A断面において冷却部材420を挟むように配置されている。制限部材410は、冷却部材420の少なくとも一部を覆うように配置されており、冷却部材420と対向する対向面を有している。このように構成することで、容器400を冷却する冷却部材420は、容器400のみならず、制限部材410も冷却することができる。制限部材410は、容器400の開口401から放出された気体状の蒸着材料の一部を物理的に遮蔽することで蒸着材料の放射角度を制限するため、制限部材410は蒸着材料の熱によって温度が上昇しやすい。本実施形態のように、制限部材410が冷却部材420の少なくとも一部を挟むように配置されていることで、制限部材410は冷却部材420によって冷却されるため、蒸着中も制限部材410の温度上昇を抑制することができる。   In the present embodiment, the restriction member 410 is arranged so as to sandwich the cooling member 420 in the AA cross section of FIG. The limiting member 410 is arranged so as to cover at least a part of the cooling member 420, and has a facing surface facing the cooling member 420. With this configuration, the cooling member 420 that cools the container 400 can cool not only the container 400 but also the limiting member 410. The restriction member 410 restricts the radiation angle of the vapor deposition material by physically shielding a part of the vapor deposition material discharged from the opening 401 of the container 400, and therefore the restriction member 410 is heated by the heat of the vapor deposition material. Is easy to rise. Since the limiting member 410 is arranged so as to sandwich at least a part of the cooling member 420 as in the present embodiment, the limiting member 410 is cooled by the cooling member 420, so that the temperature of the limiting member 410 is reduced even during vapor deposition. The rise can be suppressed.

本実施形態において、制限部材410は、固定部材(不図示)によって、冷却部材420に固定されている。固定部材は特に限定されるものではないが、ボルトなどを用いることができる。金属など、熱伝導率の高い材料で構成された固定部材によって制限部材410を冷却部材420に固定することで、制限部材410と冷却部材420とを熱的に接続することができる。これにより、冷却部材420による制限部材410の冷却効率を高めることができる。一方、制限部材410と冷却部材420との間には空間が設けられていることが好ましい。これにより、制限部材410が冷却部材420によって過度に冷却されることを抑制することができる。   In the present embodiment, the limiting member 410 is fixed to the cooling member 420 by a fixing member (not shown). The fixing member is not particularly limited, but a bolt or the like can be used. The limiting member 410 and the cooling member 420 can be thermally connected by fixing the limiting member 410 to the cooling member 420 with a fixing member made of a material having a high thermal conductivity such as metal. As a result, the cooling efficiency of the restriction member 410 by the cooling member 420 can be improved. On the other hand, it is preferable that a space be provided between the limiting member 410 and the cooling member 420. As a result, it is possible to prevent the restriction member 410 from being excessively cooled by the cooling member 420.

なお、制限部材410の冷却部材420または容器400に対する固定方法は特に限定はされない。例えば、制限部材410の重力方向の下方に冷却部材420を延在させて制限部材410を突き当て支持する突き当て部(不図示)を形成し、これにより制限部材410を突き当て支持してもよい。これによれば、制限部材410の位置決めを容易にすることができ、その結果、蒸着材料の放射角度を容易に設定できるようになる。なお、突き当て部による突き当て支持と、上述の固定部材による固定とを組み合わせてもよい。   The method of fixing the limiting member 410 to the cooling member 420 or the container 400 is not particularly limited. For example, even if the cooling member 420 is extended below the restriction member 410 to form an abutting portion (not shown) for abutting and supporting the restriction member 410, the restriction member 410 may be abutted and supported. Good. According to this, the positioning of the limiting member 410 can be facilitated, and as a result, the radiation angle of the vapor deposition material can be easily set. The abutting support by the abutting portion and the fixing by the above-mentioned fixing member may be combined.

本実施形態において、制限部材410、冷却部材420、反射部材440は、それぞれ板状の部材であるため、制限部材410を制限板、冷却部材420を冷却板、反射部材440を反射板とそれぞれ呼ぶこともできる。制限部材410は、ステンレス、アルミ、チタン、カーボン等の材料で形成されるが、これに限定されない。また、制限部材410は、単一の材料で構成される形態に限らず、複数の材料で構成される形態でもよい。また、制限部材410は、単一の部品で構成される形態に限らず、複数の部品を溶接やネジ止め
などによって組み合わせて構成されてもよい。制限部材410を構成する複数の部品は、制限部材410のうちの蒸気の制限をする部分(制限部)を構成する部品と、制限部材410のうちの冷却部材420で冷却される部分(基部、冷却部)を構成する部品とを含みうる。これらの部品は、制限部が基部を介して冷却部材420で冷却されるように、複数の部品が熱的に接続されていればよい。
In the present embodiment, since the limiting member 410, the cooling member 420, and the reflecting member 440 are plate-shaped members, the limiting member 410 is called a limiting plate, the cooling member 420 is called a cooling plate, and the reflecting member 440 is called a reflecting plate. You can also The limiting member 410 is formed of a material such as stainless steel, aluminum, titanium, or carbon, but is not limited to this. Further, the limiting member 410 is not limited to the form made of a single material, but may be made of a plurality of materials. Further, the limiting member 410 is not limited to the form configured by a single component, and may be configured by combining a plurality of components by welding, screwing, or the like. The plurality of components forming the limiting member 410 include a component forming a portion of the limiting member 410 that limits steam (a limiting portion) and a portion of the limiting member 410 that is cooled by the cooling member 420 (a base portion, And a component forming a cooling unit). A plurality of these components may be thermally connected so that the limiting portion is cooled by the cooling member 420 via the base portion.

蒸着を行うと蒸着材料が制限部材410に付着するため、一定期間、蒸着工程が行われた後には、制限部材410を交換または洗浄する等のメンテナンスが必要となる。本実施形態では、制限部材410を冷却部材420に固定するための固定部材を取り外すことによって固定を解除することで、制限部材410を取り外すことができる。すなわち、制限部材410は、冷却部材420から取り外し可能に設けられている。これにより、上述のメンテナンス作業を容易に行うことができる。   Since vapor deposition material adheres to the limiting member 410 when vapor deposition is performed, maintenance such as replacement or cleaning of the limiting member 410 is required after the vapor deposition process is performed for a certain period. In the present embodiment, the restriction member 410 can be removed by releasing the fixing by removing the fixing member for fixing the restriction member 410 to the cooling member 420. That is, the limiting member 410 is provided so as to be removable from the cooling member 420. Thereby, the above-mentioned maintenance work can be easily performed.

より具体的には、制限部材410を冷却部材420よりもひと回り大きな筒状の部材とすることで、筒状の制限部材410に冷却部材420を脱挿入可能な構成とすることができる。これによれば、制限部材410の冷却部材420への固定を解除した状態で制限部材410を引き抜くことで、冷却部材420の表面に沿って制限部材410を移動させて取り外すことができる。この結果、メンテナンス作業をより一層容易に行うことができる。あるいは、制限部材410を筒状の部材とせずとも、制限部材410および冷却部材420の少なくとも一方に、制限部材410に対する冷却部材420の相対移動をガイドするガイド部を設けておいてもよい。これによっても、制限部材410を冷却部材420の表面に沿って移動させて取り外すことができるようにすることができる。   More specifically, when the limiting member 410 is a tubular member that is slightly larger than the cooling member 420, the cooling member 420 can be inserted into and removed from the tubular limiting member 410. According to this, by pulling out the limiting member 410 in a state where the fixing of the limiting member 410 to the cooling member 420 is released, the limiting member 410 can be moved and removed along the surface of the cooling member 420. As a result, the maintenance work can be performed more easily. Alternatively, even if the limiting member 410 is not a tubular member, at least one of the limiting member 410 and the cooling member 420 may be provided with a guide portion that guides the relative movement of the cooling member 420 with respect to the limiting member 410. This also allows the restriction member 410 to be moved along the surface of the cooling member 420 and removed.

本実施例で制限部材410は、冷却部材420の側面を囲むように設けているが、冷却部材420の側面一部に配置されない構成としてもよい。   Although the limiting member 410 is provided so as to surround the side surface of the cooling member 420 in the present embodiment, it may be configured not to be disposed on a part of the side surface of the cooling member 420.

[実施例2]
図3に示す本実施例の蒸発源装置240は、容器400の高さ方向に対して、制限部材の構成が実施例1と異なる例を示す。他の実施例と共通する構成については同じ符号を付し、説明を簡略化する。図3に示すように、容器400を以下のように分けて説明する。ノズル部400(a)は、開口401を形成し、容器400の面(第1の面)に突出して設けられる領域である。収容部400(c)は、固体状態または液体状態の蒸着材料を収容する領域である。蒸発部400(b)は、ノズル部400(a)と収容部400(c)の間に位置し、気体状態の蒸着材料を収容する領域である。蒸発部400(b)は、収容部400(c)と連通しており、収容部400(c)で生じた気体状態の蒸着材料が移動可能に構成されている。なお、図3は図2(a)と同様に、容器400の開口401の開口面の法線方向を含み、制限部材412の冷却部材420と対向する対向面に垂直な断面(A−A断面)を示している。
[Example 2]
The evaporation source device 240 of the present embodiment shown in FIG. 3 shows an example in which the configuration of the limiting member is different from that of the first embodiment in the height direction of the container 400. The same components as those in the other embodiments are designated by the same reference numerals to simplify the description. As shown in FIG. 3, the container 400 will be described separately as follows. The nozzle part 400 (a) is a region that forms the opening 401 and is provided so as to project from the surface (first surface) of the container 400. The housing portion 400 (c) is a region for housing a vapor deposition material in a solid state or a liquid state. The evaporation unit 400 (b) is a region that is located between the nozzle unit 400 (a) and the containing unit 400 (c) and contains the vapor deposition material in a gaseous state. The evaporation unit 400 (b) communicates with the accommodation unit 400 (c), and the vapor deposition material in the gas state generated in the accommodation unit 400 (c) is movable. Note that, similarly to FIG. 2A, FIG. 3 includes a cross section (A-A cross section) including the normal direction of the opening surface of the opening 401 of the container 400 and perpendicular to the facing surface of the limiting member 412 facing the cooling member 420. ) Is shown.

また、本実施例では、容器400の内部に蒸着材料を収容するための坩堝部材450と坩堝部材450の上部に配置された仕切部材460を有する。坩堝部材450と仕切部材460は、収容部400(c)と対向する位置に配置されている。坩堝部材450を設けることで、蒸着材料の交換を簡単に行うことができる。仕切部材460は、気体状態の蒸着材料が通過する開口を有しており、蒸着材料の突沸による飛び散りを防止することができる。仕切部材460の有する開口の形状や個数については特に限定はされないが、仕切部材460の有する開口は、ノズル部400(a)と対向する位置以外の位置に設けられていることが好ましい。これにより、蒸着材料の突沸による飛び散りをより一層防止することができる。   Further, in this embodiment, a crucible member 450 for accommodating the vapor deposition material is provided inside the container 400, and a partition member 460 arranged above the crucible member 450. The crucible member 450 and the partition member 460 are arranged at positions facing the housing portion 400 (c). By providing the crucible member 450, the vapor deposition material can be easily replaced. The partition member 460 has an opening through which the vapor deposition material in a gaseous state passes, and can prevent the vapor deposition material from scattering due to bumping. The shape and number of the openings of the partition member 460 are not particularly limited, but the openings of the partition member 460 are preferably provided at positions other than the positions facing the nozzle portion 400 (a). This can further prevent the vapor deposition material from scattering due to bumping.

加熱部430は、蒸発部400(b)に対向する第1の加熱部430(a)と、収容部
400(c)に対向する第2の加熱部430(b)に分かれた構成となっている。このような構成にすることにより、蒸発部400(b)への加熱温度と収容部400(c)への加熱温度とを個別に調節することが可能となる。
The heating unit 430 is divided into a first heating unit 430 (a) facing the evaporation unit 400 (b) and a second heating unit 430 (b) facing the accommodation unit 400 (c). There is. With such a configuration, it is possible to individually adjust the heating temperature for the evaporation unit 400 (b) and the heating temperature for the storage unit 400 (c).

一般的には、収容部400(c)に収容される固体状態または液体状態の蒸着材料に関して、高温の熱による材料の劣化が懸念される。そのため第2の加熱部430(b)は、固体状態または液体状態の蒸着材料を気体状態に変化させられる程度の温度で制御されることが好ましい。具体的には、蒸着材料の昇華温度または沸点付近の温度で制御されることが好ましい。それに対し、蒸発部400(b)に収容される気体状態の蒸着材料は、ノズル部400(a)に蒸着材料が凝固しないように気体状態を維持する必要がある。そのため第1の加熱部430(a)は、第2の加熱部430(b)よりも高い温度で制御される。   In general, regarding the vapor deposition material in the solid state or the liquid state stored in the storage section 400 (c), deterioration of the material due to high temperature heat is concerned. Therefore, the second heating unit 430 (b) is preferably controlled at a temperature at which the vapor deposition material in the solid state or the liquid state can be changed to the gas state. Specifically, it is preferably controlled at the sublimation temperature of the vapor deposition material or at a temperature near the boiling point. On the other hand, the vapor deposition material stored in the evaporation unit 400 (b) needs to be maintained in the vapor state so that the vapor deposition material does not solidify in the nozzle unit 400 (a). Therefore, the first heating unit 430 (a) is controlled at a higher temperature than the second heating unit 430 (b).

本実施例において、冷却部材420は、容器400の開口401の開口面の法線方向を含み、制限部材412の冷却部材420と対向する対向面に垂直な断面において、蒸発部400(b)と収容部400(c)とを挟むように配置されている。   In the present embodiment, the cooling member 420 includes the evaporating portion 400 (b) in a cross section that includes the normal direction of the opening surface of the opening 401 of the container 400 and is perpendicular to the facing surface of the limiting member 412 that faces the cooling member 420. It is arranged so as to sandwich the housing portion 400 (c).

制限部材412は、容器400の開口401の開口面の法線方向を含み、制限部材412の冷却部材420と対向する対向面に垂直な断面において、冷却部材420と蒸発部400(b)を挟むように配置されている。制限部材412の冷却部材420に対する固定方法は実施例1と同様である。制限部材412は、蒸発部400(b)の少なくとも一部および冷却部材420の少なくとも一部を覆うように配置されている。本実施例では、制限部材412は、第1の加熱部430(a)に対向し、第2の加熱部430(b)とは対向しない構成になっている。ただし、この構成に限定はされず、制限部材412が、第2の加熱部430(b)の一部と対向する構成であってもよい。   The restricting member 412 includes the normal direction of the opening surface of the opening 401 of the container 400, and sandwiches the cooling member 420 and the evaporation unit 400 (b) in a cross section perpendicular to the facing surface of the restricting member 412 that faces the cooling member 420. Are arranged as follows. The method of fixing the limiting member 412 to the cooling member 420 is the same as in the first embodiment. The restriction member 412 is arranged so as to cover at least a part of the evaporation unit 400 (b) and at least a part of the cooling member 420. In this embodiment, the limiting member 412 is configured to face the first heating unit 430 (a) and not face the second heating unit 430 (b). However, the configuration is not limited to this, and the configuration may be such that the limiting member 412 faces a part of the second heating unit 430 (b).

[実施例3]
図4に示す本実施例の蒸発源装置240は、容器400のノズル部400(a)周辺の制限部材の構成が実施例1、2と異なる例を示す。他の実施例と共通する構成については同じ符号を付し、説明を簡略化する。冷却部材420を以下のように分けて説明する。対向部420(a)は、ノズル部400(a)が配置される容器400の上面である面(第1の面)に対向して配置される領域である。側面部420(b)は、容器400の側面に対向して配置される領域である。底面部420(c)は、容器400の底面に対向して配置される領域である。なお、図4は図2(a)と同様に、容器400の開口401の開口面の法線方向を含み、制限部材414の冷却部材420と対向する対向面に垂直な断面(A−A断面)を示している。
[Example 3]
The evaporation source device 240 of this embodiment shown in FIG. 4 is different from the first and second embodiments in the configuration of the limiting member around the nozzle portion 400 (a) of the container 400. The same components as those in the other embodiments are designated by the same reference numerals to simplify the description. The cooling member 420 will be described separately below. The facing portion 420 (a) is a region arranged so as to face the surface (first surface) that is the upper surface of the container 400 in which the nozzle portion 400 (a) is arranged. The side surface portion 420 (b) is an area arranged to face the side surface of the container 400. The bottom surface portion 420 (c) is an area arranged to face the bottom surface of the container 400. Note that, similarly to FIG. 2A, FIG. 4 includes a cross section (A-A cross section) including the normal direction of the opening surface of the opening 401 of the container 400 and perpendicular to the facing surface of the limiting member 414 facing the cooling member 420. ) Is shown.

制限部材414は、容器400の側面に対向する基部414(c)、ノズル部400(a)の開口端部から蒸着材料が放出する方向に位置する制限部414(b)、冷却部材420の対向部420(a)に対向して延びる延在部414(a)を含む。制限部材414の冷却部材420に対する固定方法は実施例1と同様である。この構成により、実施例1、2に比べて、制限部材414が冷却部材420との対向する面積を増やすことができ、制限部材414の冷却効率を向上させることができる。   The limiting member 414 faces the base portion 414 (c) facing the side surface of the container 400, the limiting portion 414 (b) positioned in the direction in which the vapor deposition material is discharged from the opening end of the nozzle portion 400 (a), and the cooling member 420. An extending portion 414 (a) extending opposite the portion 420 (a) is included. The method of fixing the limiting member 414 to the cooling member 420 is the same as in the first embodiment. With this configuration, the area where the restriction member 414 faces the cooling member 420 can be increased as compared with the first and second embodiments, and the cooling efficiency of the restriction member 414 can be improved.

[実施例4]
図5に示す本実施例の蒸発源装置240は、蒸発部400(b)と収容部400(c)をつなぐ中間部400(d)を設ける例を示す。他の実施例と共通する構成については同じ符号を付し、説明を簡略化する。なお、図5は図2(a)と同様に、容器400の開口401の開口面の法線方向を含み、制限部材416の冷却部材420と対向する対向面に垂直な断面(A−A断面)を示している。
[Example 4]
The evaporation source device 240 of this embodiment shown in FIG. 5 shows an example in which an intermediate portion 400 (d) that connects the evaporation portion 400 (b) and the housing portion 400 (c) is provided. The same components as those in the other embodiments are designated by the same reference numerals to simplify the description. Note that, like FIG. 2A, FIG. 5 includes a cross section (A-A cross section) including the normal direction of the opening surface of the opening 401 of the container 400 and perpendicular to the facing surface of the limiting member 416 facing the cooling member 420. ) Is shown.

中間部400(d)は、蒸発部400(b)および収容部400(c)のそれぞれと連通している。中間部400(d)は、蒸発部400(b)と収容部400(c)より蒸着材料を収容する領域の体積が小さい。A−A断面において、中間部400(d)の制限部材416の冷却部材420と対向する対向面に垂直な方向における幅502は、蒸発部400(b)および収容部400(c)の制限部材416の冷却部材420と対向する対向面に垂直な方向における幅(501、503)のいずれよりも小さい。さらに、蒸発部400(b)は、収容部400(c)より蒸着材料を収容する領域の体積が小さい。A−A断面において、蒸発部400(b)の制限部材416の冷却部材420と対向する対向面に垂直な方向における幅501は、収容部400(c)の制限部材416の冷却部材420と対向する対向面に垂直な方向における幅503よりも小さい。なお、本実施例の場合は、上記の各幅は、「制限部材に挟まれる方向における幅」と言い換えることもできる。   The middle part 400 (d) communicates with each of the evaporation part 400 (b) and the containing part 400 (c). The intermediate portion 400 (d) has a smaller volume of the region for containing the vapor deposition material than the evaporation portion 400 (b) and the containing portion 400 (c). In the AA cross section, the width 502 in the direction perpendicular to the facing surface of the limiting member 416 of the intermediate portion 400 (d) facing the cooling member 420 has a limiting member of the evaporation portion 400 (b) and the containing portion 400 (c). It is smaller than any of the widths (501, 503) in the direction perpendicular to the facing surface of 416 facing the cooling member 420. Further, the evaporation section 400 (b) has a smaller volume of the region for accommodating the vapor deposition material than the accommodating section 400 (c). In the AA cross section, the width 501 in the direction perpendicular to the facing surface of the limiting member 416 of the evaporation unit 400 (b) facing the cooling member 420 faces the cooling member 420 of the limiting member 416 of the accommodation unit 400 (c). Is smaller than the width 503 in the direction perpendicular to the facing surface. In addition, in the case of the present embodiment, each of the above-mentioned widths can be paraphrased as "a width in the direction sandwiched by the restriction members".

反射部材440は、蒸発部400(b)に対向する第1の反射部材440(a)と、収容部400(c)に対向する第2の反射部材440(b)に分かれた構成となっている。また本実施例では、第1の反射部材440(a)は、蒸発部400(b)のみに対向しているが、中間部400(d)に対向してもよいし、中間部400(d)に対向する反射部材を別途設けてもよい。   The reflection member 440 is divided into a first reflection member 440 (a) facing the evaporation unit 400 (b) and a second reflection member 440 (b) facing the storage unit 400 (c). There is. Further, in this embodiment, the first reflecting member 440 (a) faces only the evaporating section 400 (b), but may face the intermediate section 400 (d) or the intermediate section 400 (d). ) May be provided separately.

冷却部材420は、蒸発部400(b)の少なくとも一部を取り囲む第1の冷却部と、収容部400(c)の少なくとも一部を取り囲む第2の冷却部と、を有する。本実施例では、第1の冷却部は中間部400(d)の少なくとも一部も取り囲んでいる。A−A断面において、第1の冷却部の制限部材416の冷却部材420と対向する対向面に垂直な方向における幅504は、第2の冷却部の制限部材416の冷却部材420と対向する対向面に垂直な方向における幅505よりも小さい。制限部材416は、冷却部材420の蒸発部400(b)と中間部400(d)に対向する領域を挟むように配置され、冷却部材420の収容部400(c)に対向する領域には対向しない構成となっている。制限部材416の蒸発部400(b)と冷却部材420を挟む方向における間隔506は、冷却部材420の収容部400(c)を挟む方向における幅505より小さい。このことにより、スペースを活用して蒸発源装置240を構成することができる。   The cooling member 420 includes a first cooling unit that surrounds at least a part of the evaporation unit 400 (b) and a second cooling unit that surrounds at least a part of the housing unit 400 (c). In the present embodiment, the first cooling section also surrounds at least a part of the intermediate section 400 (d). In the AA cross section, the width 504 in the direction perpendicular to the facing surface of the limiting member 416 of the first cooling unit that faces the cooling member 420 faces the cooling member 420 of the limiting member 416 of the second cooling unit that faces the cooling member 420. It is smaller than the width 505 in the direction perpendicular to the plane. The limiting member 416 is arranged so as to sandwich the region of the cooling member 420 facing the evaporation part 400 (b) and the intermediate part 400 (d), and faces the region of the cooling member 420 facing the accommodation part 400 (c). It is not configured. The interval 506 in the direction sandwiching the evaporation member 400 (b) and the cooling member 420 of the restriction member 416 is smaller than the width 505 in the sandwiching direction of the housing part 400 (c) of the cooling member 420. This makes it possible to configure the evaporation source device 240 by utilizing the space.

[実施例5]
本実施例の蒸発源装置240は、容器400を複数設ける例を示す。図6に示すように、蒸発源装置240は、実施例4での蒸発源装置が2つ並べられた構成を有している。なお、図6は図2(a)と同様に、容器400の開口401の開口面の法線方向を含み、制限部材416の冷却部材420と対向する対向面に垂直な断面(A−A断面)を示している。
[Example 5]
The evaporation source device 240 of the present embodiment shows an example in which a plurality of containers 400 are provided. As shown in FIG. 6, the evaporation source device 240 has a configuration in which two evaporation source devices according to the fourth embodiment are arranged. Note that, similarly to FIG. 2A, FIG. 6 includes a cross section (A-A cross section) including the normal direction of the opening surface of the opening 401 of the container 400 and perpendicular to the facing surface of the limiting member 416 facing the cooling member 420. ) Is shown.

制限部材416は、固定部材であるボルト600により冷却部材420に固定されている。制限部材416と冷却部材420との間には、空間が設けられている。このように制限部材416と冷却部材420の間に空間を設け、輻射により制限部材416を冷却することにより、制限部材416が過度に冷却されることを抑制することができる。ボルト600を外すことによって固定を解除すれば、制限部材416を冷却部材420の側面に沿って移動させることができるようになり、制限部材416を冷却部材420から取り外すことができる。容器400は、冷却部材420に設けられたボルト状の突起部610に配置されている。加熱部430、反射部材440は、冷却部材420にボルト600とは異なるボルト(不図示)で固定されている。   The limiting member 416 is fixed to the cooling member 420 by a bolt 600 that is a fixing member. A space is provided between the limiting member 416 and the cooling member 420. By thus providing a space between the restriction member 416 and the cooling member 420 and cooling the restriction member 416 by radiation, it is possible to prevent the restriction member 416 from being excessively cooled. When the fixing is released by removing the bolt 600, the limiting member 416 can be moved along the side surface of the cooling member 420, and the limiting member 416 can be removed from the cooling member 420. The container 400 is arranged on a bolt-shaped protrusion 610 provided on the cooling member 420. The heating unit 430 and the reflection member 440 are fixed to the cooling member 420 with a bolt (not shown) different from the bolt 600.

蒸発源装置240は、移動機構250上に設けられている。移動機構250の内部は、真空チャンバ200とは遮蔽された大気空間になっており、蒸発源装置240に接続され
る配線等(不図示)を収納することができる。この移動機構250が移動されることで、蒸発源装置240を移動しながら、蒸着することが可能となる。
The evaporation source device 240 is provided on the moving mechanism 250. The inside of the moving mechanism 250 is an atmospheric space that is shielded from the vacuum chamber 200, and can accommodate wiring and the like (not shown) connected to the evaporation source device 240. By moving the moving mechanism 250, vapor deposition can be performed while moving the evaporation source device 240.

[実施例6]
<有機電子デバイスの製造方法の具体例>
本実施形態では、蒸発源装置を備える蒸着装置(蒸着装置)を用いた有機電子デバイスの製造方法の一例を説明する。以下、有機電子デバイスの例として有機EL表示装置の構成および製造方法を例示する。まず、製造する有機EL表示装置について説明する。図7(a)は有機EL表示装置60の全体図、図7(b)は1画素の断面構造を表している。本実施形態の蒸着装置が備える蒸発源装置240としては、上記の各実施形態にいずれかに記載の装置を用いる。
[Example 6]
<Specific Example of Method for Manufacturing Organic Electronic Device>
In the present embodiment, an example of a method for manufacturing an organic electronic device using a vapor deposition apparatus (vapor deposition apparatus) including an evaporation source device will be described. Hereinafter, the configuration and manufacturing method of an organic EL display device will be illustrated as an example of an organic electronic device. First, the organic EL display device to be manufactured will be described. 7A shows an overall view of the organic EL display device 60, and FIG. 7B shows a sectional structure of one pixel. As the evaporation source device 240 included in the vapor deposition device of the present embodiment, the device described in any of the above embodiments is used.

図7(a)に示すように、有機EL表示装置60の表示領域61には、発光素子を複数備える画素62がマトリクス状に複数配置されている。詳細は後で説明するが、発光素子のそれぞれは、一対の電極に挟まれた有機層を備えた構造を有している。なお、ここでいう画素とは、表示領域61において所望の色の表示を可能とする最小単位を指している。本図の有機EL表示装置の場合、互いに異なる発光を示す第1発光素子62R、第2発光素子62G、第3発光素子62Bの組合せにより画素62が構成されている。画素62は、赤色発光素子と緑色発光素子と青色発光素子の組合せで構成されることが多いが、黄色発光素子とシアン発光素子と白色発光素子の組み合わせでもよく、少なくとも1色以上であれば特に制限されるものではない。   As shown in FIG. 7A, in the display area 61 of the organic EL display device 60, a plurality of pixels 62 including a plurality of light emitting elements are arranged in a matrix. Although details will be described later, each of the light emitting elements has a structure including an organic layer sandwiched between a pair of electrodes. It should be noted that the pixel here refers to the minimum unit that enables display of a desired color in the display area 61. In the case of the organic EL display device shown in the figure, the pixel 62 is configured by a combination of the first light emitting element 62R, the second light emitting element 62G, and the third light emitting element 62B which emit different lights. The pixel 62 is often composed of a combination of a red light emitting element, a green light emitting element, and a blue light emitting element, but may be a combination of a yellow light emitting element, a cyan light emitting element, and a white light emitting element. It is not limited.

図7(b)は、図7(a)のA−B線における部分断面模式図である。画素62は、被蒸着体である基板63上に、第1電極(陽極)64と、正孔輸送層65と、発光層66R,66G,66Bのいずれかと、電子輸送層67と、第2電極(陰極)68と、を備える有機EL素子を有している。これらのうち、正孔輸送層65、発光層66R,66G,66B、電子輸送層67が有機層に当たる。また、本実施形態では、発光層66Rは赤色を発する有機EL層、発光層66Gは緑色を発する有機EL層、発光層66Bは青色を発する有機EL層である。発光層66R,66G,66Bは、それぞれ赤色、緑色、青色を発する発光素子(有機EL素子と記述する場合もある)に対応するパターンに形成されている。また、第1電極64は、発光素子ごとに分離して形成されている。正孔輸送層65と電子輸送層67と第2電極68は、複数の発光素子62R,62G,62Bと共通で形成されていてもよいし、発光素子毎に形成されていてもよい。なお、第1電極64と第2電極68とが異物によってショートするのを防ぐために、第1電極64間に絶縁層69が設けられている。さらに、有機EL層は水分や酸素によって劣化するため、水分や酸素から有機EL素子を保護するための保護層70が設けられている。   FIG. 7B is a schematic partial sectional view taken along the line AB of FIG. The pixel 62 includes a first electrode (anode) 64, a hole transport layer 65, any one of the light emitting layers 66R, 66G, and 66B, an electron transport layer 67, and a second electrode on a substrate 63 that is a vapor deposition target. And a (cathode) 68. Among these, the hole transport layer 65, the light emitting layers 66R, 66G, 66B, and the electron transport layer 67 correspond to the organic layers. Further, in the present embodiment, the light emitting layer 66R is an organic EL layer that emits red, the light emitting layer 66G is an organic EL layer that emits green, and the light emitting layer 66B is an organic EL layer that emits blue. The light emitting layers 66R, 66G, and 66B are formed in patterns corresponding to light emitting elements that emit red, green, and blue (sometimes described as organic EL elements). The first electrode 64 is formed separately for each light emitting element. The hole transport layer 65, the electron transport layer 67, and the second electrode 68 may be formed in common with the plurality of light emitting elements 62R, 62G, 62B, or may be formed for each light emitting element. An insulating layer 69 is provided between the first electrodes 64 in order to prevent the first electrode 64 and the second electrode 68 from being short-circuited by foreign matter. Furthermore, since the organic EL layer is deteriorated by water and oxygen, a protective layer 70 is provided to protect the organic EL element from water and oxygen.

次に、有機EL表示装置の製造方法の例について具体的に説明する。
まず、有機EL表示装置を駆動するための回路(不図示)および第1電極64が形成された基板63を準備する。
Next, an example of the method for manufacturing the organic EL display device will be specifically described.
First, a circuit (not shown) for driving the organic EL display device and the substrate 63 on which the first electrode 64 is formed are prepared.

第1電極64が形成された基板63の上にアクリル樹脂をスピンコートで形成し、アクリル樹脂をリソグラフィ法により、第1電極64が形成された部分に開口が形成されるようにパターニングし絶縁層69を形成する。この開口部が、発光素子が実際に発光する発光領域に相当する。   An acrylic resin is formed by spin coating on the substrate 63 on which the first electrode 64 is formed, and the acrylic resin is patterned by a lithography method so that an opening is formed in a portion where the first electrode 64 is formed. 69 is formed. This opening corresponds to a light emitting region where the light emitting element actually emits light.

絶縁層69がパターニングされた基板63を第1の蒸着装置に搬入し、被処理体設置台210にて基板を保持し、正孔輸送層65を、表示領域の第1電極64の上に共通する層として成膜する。正孔輸送層65は真空蒸着により成膜される。実際には正孔輸送層65は表示領域61よりも大きなサイズに形成されるため、高精細なマスクは不要である。こ
こで、本ステップでの成膜や、以下の各レイヤーの成膜において用いられる蒸着装置は、上記各実施形態のいずれかに記載された蒸発源装置を備えている。
The substrate 63 on which the insulating layer 69 is patterned is loaded into the first vapor deposition apparatus, the substrate is held on the object-to-be-processed installation base 210, and the hole transport layer 65 is commonly used on the first electrode 64 in the display area. The layer is formed as a layer. The hole transport layer 65 is formed by vacuum vapor deposition. Since the hole transport layer 65 is actually formed to have a size larger than that of the display region 61, a high-definition mask is unnecessary. Here, the vapor deposition apparatus used in the film formation in this step and in the film formation of each layer described below includes the evaporation source apparatus described in any of the above embodiments.

次に、正孔輸送層65までが形成された基板63を第2の蒸着装置に搬入し、被処理体設置台210にて保持する。基板とマスクとのアライメントを行い、基板をマスクの上に載置し、基板63の赤色を発する素子を配置する部分に、赤色を発する発光層66Rを成膜する。本例によれば、マスクと基板とを良好に重ね合わせることができ、高精度な成膜を行うことができる。   Next, the substrate 63 on which the hole transport layer 65 has been formed is carried into the second vapor deposition apparatus, and is held by the target object mounting base 210. The substrate and the mask are aligned, the substrate is placed on the mask, and the light emitting layer 66R that emits red light is formed on the portion of the substrate 63 where the element that emits red light is arranged. According to this example, the mask and the substrate can be satisfactorily overlapped with each other, and highly accurate film formation can be performed.

発光層66Rの成膜と同様に、第3の蒸着装置により緑色を発する発光層66Gを成膜し、さらに第4の蒸着装置により青色を発する発光層66Bを成膜する。発光層66R、66G、66Bの成膜が完了した後、第5の蒸着装置により表示領域61の全体に電子輸送層67を成膜する。電子輸送層67は、3色の発光層66R、66G、66Bに共通の層として形成される。   Similar to the film formation of the light emitting layer 66R, the light emitting layer 66G emitting green is formed by the third vapor deposition device, and the light emitting layer 66B emitting blue is formed by the fourth vapor deposition device. After the film formation of the light emitting layers 66R, 66G, 66B is completed, the electron transport layer 67 is formed over the entire display region 61 by the fifth vapor deposition device. The electron transport layer 67 is formed as a layer common to the three color light emitting layers 66R, 66G, and 66B.

電子輸送層67までが形成された基板をスパッタリング装置に移動し、第2電極68を成膜し、その後プラズマCVD装置に移動して保護層70を成膜して、有機EL表示装置60が完成する。   The substrate on which the electron transport layer 67 has been formed is moved to the sputtering apparatus, the second electrode 68 is formed, and then the plasma CVD apparatus is formed to form the protective layer 70, and the organic EL display device 60 is completed. To do.

絶縁層69がパターニングされた基板63を蒸着装置に搬入してから保護層70の成膜が完了するまでは、水分や酸素を含む雰囲気にさらしてしまうと、有機EL材料からなる発光層が水分や酸素によって劣化してしまうおそれがある。したがって、本例において、蒸着装置間の基板の搬入搬出は、真空雰囲気または不活性ガス雰囲気の下で行われる。   If the substrate 63 on which the insulating layer 69 is patterned is carried into the vapor deposition apparatus and until the film formation of the protective layer 70 is completed, if the substrate 63 is exposed to an atmosphere containing water or oxygen, the light emitting layer made of the organic EL material will have water. It may be deteriorated by oxygen or oxygen. Therefore, in this example, loading and unloading of the substrate between the vapor deposition devices are performed in a vacuum atmosphere or an inert gas atmosphere.

このようにして得られた有機EL表示装置は、発光素子ごとに発光層が精度よく形成される。上記製造方法を用いれば、基板や有機EL表示装置を駆動するための回路の損傷に起因する有機EL表示装置の不良の発生を抑制することができる。本実施形態に係る蒸着装置によれば、蒸発源装置の制限部材の温度上昇を抑制することができるため、成膜対象の基板の加熱を抑制することができるため、良好な蒸着が可能となる。   In the organic EL display device thus obtained, the light emitting layer is accurately formed for each light emitting element. By using the manufacturing method described above, it is possible to suppress the occurrence of defects in the organic EL display device due to damage to the substrate or a circuit for driving the organic EL display device. According to the vapor deposition device according to the present embodiment, it is possible to suppress the temperature rise of the restriction member of the evaporation source device, it is possible to suppress the heating of the substrate of the film formation target, it is possible to perform good vapor deposition .

240:蒸発源装置,400:容器,420:冷却部材,410:制限部材   240: evaporation source device, 400: container, 420: cooling member, 410: restriction member

Claims (24)

蒸着材料を収容する容器と、
冷却部材と、
前記容器の開口から放出される蒸着材料の放射角度を一定の角度以下に制限する制限部材と、を備える蒸発源装置であって、
前記制限部材は、前記冷却部材と対向する対向面を有し、
前記容器は、固体状態または液体状態の前記蒸着材料を収容する収容部と、前記開口と前記収容部との間に配置され、前記収容部と連通し、気体状態の前記蒸着材料を収容する蒸発部と、前記収容部と前記蒸発部との間に配置され、前記収容部および前記蒸発部のそれぞれと連通する中間部と、を有し、
前記冷却部材は、前記蒸発部の少なくとも一部を取り囲む第1の冷却部と、前記収容部の少なくとも一部を取り囲む第2の冷却部と、を有し、
前記開口の開口面の法線方向を含み、前記対向面に垂直な断面において、
前記冷却部材は、前記容器の少なくとも一部を挟むように配置され、
前記制限部材は、前記冷却部材の少なくとも一部を挟むように配置され、
前記中間部の幅は、前記蒸発部の幅および前記収容部の幅よりも小さく、
前記蒸発部の前記対向面に垂直な方向の幅は、前記収容部の前記対向面に垂直な方向の幅よりも小さく、
前記第1の冷却部の前記対向面に垂直な方向における幅は、前記第2の冷却部の前記対向面に垂直な方向における幅よりも小さい
ことを特徴とする蒸発源装置。
A container containing the vapor deposition material,
A cooling member,
A vaporization source device comprising: a limiting member that limits the radiation angle of the vapor deposition material emitted from the opening of the container to a certain angle or less,
The limiting member has a facing surface facing the cooling member,
The container is disposed between the container for accommodating the vapor deposition material in a solid state or a liquid state, the opening and the container, communicates with the container, and evaporates to accommodate the vapor deposition material in a gas state. A portion, and an intermediate portion that is disposed between the accommodation portion and the evaporation portion and that communicates with each of the accommodation portion and the evaporation portion,
The cooling member includes a first cooling section that surrounds at least a part of the evaporation section, and a second cooling section that surrounds at least a part of the accommodation section,
In a cross section perpendicular to the facing surface, including the normal direction of the opening surface of the opening,
The cooling member is arranged so as to sandwich at least a part of the container,
The limiting member is arranged so as to sandwich at least a part of the cooling member,
The width of the intermediate portion, rather smaller than the width of the width and the housing portion of the evaporation section,
The width of the evaporation portion in the direction perpendicular to the facing surface is smaller than the width of the accommodation portion in the direction perpendicular to the facing surface,
The evaporation source device , wherein the width of the first cooling unit in a direction perpendicular to the facing surface is smaller than the width of the second cooling unit in a direction perpendicular to the facing surface .
蒸着材料をそれぞれ収容する複数の容器と、
複数の冷却部材と、
前記複数の容器のそれぞれの開口から放出される蒸着材料の放射角度を一定の角度以下にそれぞれ制限する複数の制限部材と、を備える蒸発源装置であって、
前記複数の制限部材のそれぞれは、前記冷却部材のそれぞれと対向する対向面を有し、
前記複数の容器のそれぞれについて、前記開口の開口面の法線方向を含み、前記対向面に垂直な断面において、
前記複数の冷却部材のそれぞれは、前記複数の容器のそれぞれの少なくとも一部を挟む
ように配置され、
前記複数の制限部材のそれぞれは、前記複数の冷却部材のそれぞれの少なくとも一部を挟むように配置され、
前記複数の容器は並んで配置されており、
隣り合う2つの前記容器のそれぞれに対応する2つの前記制限部材は、対向して配置される
ことを特徴とする蒸発源装置。
A plurality of containers each containing a vapor deposition material,
A plurality of cooling members,
A plurality of limiting members for limiting the radiation angle of the vapor deposition material emitted from the respective openings of the plurality of containers to a certain angle or less, and an evaporation source device comprising:
Each of the plurality of limiting members has a facing surface that faces each of the cooling members,
For each of the plurality of containers, including a normal direction of the opening surface of the opening, in a cross section perpendicular to the facing surface,
Each of the plurality of cooling members is arranged so as to sandwich at least a part of each of the plurality of containers,
Each of the plurality of limiting members is arranged so as to sandwich at least a part of each of the plurality of cooling members,
The plurality of containers are arranged side by side,
The evaporation source device, wherein the two limiting members corresponding to the two adjacent containers are arranged to face each other.
蒸着材料を収容する容器と、
冷却部材と、
前記容器の開口から放出される蒸着材料の放射角度を一定の角度以下に制限する制限部材と、を備える蒸発源装置であって、
前記制限部材は、前記冷却部材と対向する対向面を有し、
前記容器は、固体状態または液体状態の前記蒸着材料を収容する収容部と、前記開口と前記収容部との間に配置され、前記収容部と連通し、気体状態の前記蒸着材料を収容する蒸発部と、を含み、
前記冷却部材は、前記蒸発部の少なくとも一部を取り囲む第1の冷却部と、前記収容部の少なくとも一部を取り囲む第2の冷却部と、を有し
記開口の開口面の法線方向を含み、前記対向面に垂直な断面において、
前記冷却部材は、前記容器の少なくとも一部を挟むように配置され、
前記制限部材は、前記冷却部材の少なくとも一部を挟むように配置され、
前記蒸発部の前記対向面に垂直な方向の幅は、前記収容部の前記対向面に垂直な方向の幅よりも小さく、
前記第1の冷却部の前記対向面に垂直な方向における幅は、前記第2の冷却部の前記対向面に垂直な方向における幅よりも小さい
ことを特徴とする蒸発源装置。
A container containing the vapor deposition material,
A cooling member,
A vaporization source device comprising: a limiting member that limits the radiation angle of the vapor deposition material emitted from the opening of the container to a certain angle or less,
The limiting member has a facing surface facing the cooling member,
The container is disposed between the container for accommodating the vapor deposition material in a solid state or a liquid state, the opening and the container, communicates with the container, and evaporates to accommodate the vapor deposition material in a gas state. Part and including,
The cooling member includes a first cooling section that surrounds at least a part of the evaporation section, and a second cooling section that surrounds at least a part of the accommodation section ,
Includes normal direction of the opening surface of the front Symbol opening, in a cross section perpendicular to the facing surface,
The cooling member is arranged so as to sandwich at least a part of the container,
The limiting member is arranged so as to sandwich at least a part of the cooling member,
The width of the evaporation portion in the direction perpendicular to the facing surface is smaller than the width of the accommodation portion in the direction perpendicular to the facing surface,
The width of the first cooling unit in the direction perpendicular to the facing surface is smaller than the width of the second cooling unit in the direction perpendicular to the facing surface.
An evaporation source device characterized by the above.
蒸着材料を収容する容器と、
冷却部材と、
前記容器の開口から放出される蒸着材料の放射角度を一定の角度以下に制限する制限部材と、を備える蒸発源装置であって、
前記制限部材は、前記冷却部材と対向する対向面を有し、
前記開口の開口面の法線方向を含み、前記対向面に垂直な断面において、
前記冷却部材は、前記容器の少なくとも一部を挟むように配置され、
前記制限部材は、前記冷却部材の少なくとも一部を挟むように配置され、
前記容器は、前記開口を形成するノズル部を含み、
前記ノズル部は、前記容器の第1の面に対して突出して設けられ、
前記冷却部材は、前記容器の前記第1の面に対向して配置される対向部を含み、
前記制限部材は、前記対向部に対向するように延在する延在部を含む
ことを特徴とする蒸発源装置。
A container containing the vapor deposition material,
A cooling member,
A vaporization source device comprising: a limiting member that limits the radiation angle of the vapor deposition material emitted from the opening of the container to a certain angle or less,
The limiting member has a facing surface facing the cooling member,
In a cross section perpendicular to the facing surface, including the normal direction of the opening surface of the opening,
The cooling member is arranged so as to sandwich at least a part of the container,
The limiting member is arranged so as to sandwich at least a part of the cooling member,
The container includes a nozzle portion forming the opening,
The nozzle portion is provided so as to project with respect to the first surface of the container,
The cooling member includes a facing portion arranged facing the first surface of the container,
The limiting member includes an extending portion that extends so as to face the facing portion.
An evaporation source device characterized by the above.
前記制限部材は、前記冷却部材により冷却される
ことを特徴とする請求項1から4のいずれか一項に記載の蒸発源装置。
Wherein the restriction member, the evaporation source device according to claim 1, any one of 4, characterized in that it is cooled by the cooling member.
前記制限部材は、前記冷却部材と熱的に接続されている
ことを特徴とする請求項1から5のいずれか一項に記載の蒸発源装置。
The evaporation source device according to any one of claims 1 to 5, wherein the limiting member is thermally connected to the cooling member.
前記制限部材は、前記制限部材を前記冷却部材に対して固定する固定部材を介して、前記冷却部材と熱的に接続されている
ことを特徴とする請求項1からのいずれか一項に記載の蒸発源装置。
7. The limiting member is thermally connected to the cooling member via a fixing member that fixes the limiting member to the cooling member, according to any one of claims 1 to 6. The evaporation source device described.
前記冷却部材は、前記容器の少なくとも一部を取り囲むように配置されている
ことを特徴とする請求項1からのいずれか一項に記載の蒸発源装置。
The said cooling member is arrange | positioned so that at least one part of the said container may be surrounded, The evaporation source apparatus as described in any one of Claim 1 to 7 characterized by the above-mentioned.
前記断面において、前記制限部材は、前記蒸発部の少なくとも一部および前記冷却部材の少なくとも一部を挟むように配置されている
ことを特徴とする請求項1または3に記載の蒸発源装置。
In the cross section, the limiting member, the evaporation source device according to claim 1 or 3, characterized in that it is arranged so as to sandwich at least a portion of at least a portion and the cooling member of the evaporation section.
前記断面において、
前記制限部材の前記蒸発部の少なくとも一部を挟む部分の前記対向面に垂直な方向における間隔は、前記第2の冷却部の前記対向面に垂直な方向における幅よりも小さい
ことを特徴とする請求項に記載の蒸発源装置。
In the cross section,
An interval between portions of the limiting member that sandwich at least a part of the evaporation portion in a direction perpendicular to the facing surface is smaller than a width of the second cooling portion in a direction perpendicular to the facing surface. The evaporation source device according to claim 9 .
前記容器を加熱する加熱部をさらに備え、
前記加熱部は、前記容器と前記冷却部材との間に配置される
ことを特徴とする請求項1から10のいずれか一項に記載の蒸発源装置。
Further comprising a heating unit for heating the container,
The evaporation source device according to any one of claims 1 to 10 , wherein the heating unit is disposed between the container and the cooling member.
前記容器を加熱する加熱部をさらに備え、
前記加熱部は、第1の加熱部と第2の加熱部とを含み、
前記第1の加熱部は、前記蒸発部に対向するように配置され、
前記第2の加熱部は、前記収容部に対向するように配置され、
前記第1の加熱部および前記第2の加熱部は、前記容器と前記冷却部材との間に配置されることを特徴とする請求項1,3,9または10のいずれか一項に記載の蒸発源装置。
Further comprising a heating unit for heating the container,
The heating unit includes a first heating unit and a second heating unit,
The first heating unit is arranged to face the evaporation unit,
The second heating unit is arranged to face the accommodation unit,
The said 1st heating part and the said 2nd heating part are arrange | positioned between the said container and the said cooling member, The any one of Claim 1, 3, 9 or 10 characterized by the above-mentioned. Evaporation source device.
前記第1の加熱部は、前記第2の加熱部よりも高い温度で制御される
ことを特徴とする請求項12に記載の蒸発源装置。
The evaporation source device according to claim 12 , wherein the first heating unit is controlled at a temperature higher than that of the second heating unit.
前記加熱部の温度が250℃以上1400℃以下となるように制御される
ことを特徴とする請求項11から13のいずれか一項に記載の蒸発源装置。
The evaporation source device according to any one of claims 11 to 13 , wherein the temperature of the heating unit is controlled to be 250 ° C or higher and 1400 ° C or lower.
前記加熱部と前記冷却部材との間に配置され、前記加熱部からの熱を反射する反射部材をさらに備え、
前記反射部材は、前記冷却部材により冷却される
ことを特徴とする請求項11から14のいずれか一項に記載の蒸発源装置。
Disposed between the heating unit and the cooling member, further comprising a reflecting member that reflects heat from the heating unit,
The evaporation source device according to any one of claims 11 to 14 , wherein the reflection member is cooled by the cooling member.
前記反射部材はモリブデンにより構成され、前記容器はタンタルにより構成され、前記制限部材は、ステンレスにより構成される
ことを特徴とする請求項15に記載の蒸発源装置。
The evaporation source device according to claim 15 , wherein the reflection member is made of molybdenum, the container is made of tantalum, and the limiting member is made of stainless steel.
前記制限部材は、前記冷却部材の表面に沿って取り外し可能に設けられている
ことを特徴とする請求項1から16のいずれか一項に記載の蒸発源装置。
The evaporation source device according to any one of claims 1 to 16 , wherein the limiting member is detachably provided along a surface of the cooling member.
前記容器は、前記開口を形成するノズル部を含み、
前記ノズル部は、前記容器の第1の面に対して突出して設けられ、
前記冷却部材は、前記容器の前記第1の面に対向して配置される対向部を含み、
前記制限部材は、前記対向部に対向するように延在する延在部を含む
ことを特徴とする請求項1から17のいずれか一項に記載の蒸発源装置。
The container includes a nozzle portion forming the opening,
The nozzle portion is provided so as to project with respect to the first surface of the container,
The cooling member includes a facing portion arranged facing the first surface of the container,
The evaporation source device according to any one of claims 1 to 17 , wherein the limiting member includes an extending portion that extends so as to face the facing portion.
前記冷却部材は、前記冷却部材の内部に、冷却用の液体を流動させるための流路が設けられている
ことを特徴とする請求項1から18のいずれか一項に記載の蒸発源装置。
The evaporation source device according to any one of claims 1 to 18 , wherein the cooling member is provided with a flow path for flowing a cooling liquid inside the cooling member.
前記容器は、前記開口を複数有する
ことを特徴とする請求項1から19のいずれか一項に記載の蒸発源装置。
The container, the evaporation source device according to any one of claims 1 to 19, characterized in that a plurality of said openings.
前記断面において、前記制限部材の前記蒸発部の少なくとも一部を挟む部分の前記対向面に垂直な方向における間隔は、前記第2の冷却部の前記対向面に垂直な方向における幅よりも小さい
ことを特徴とする請求項1または3に記載の蒸発源装置。
In the cross section, the interval in the direction perpendicular to the facing surface of the portion that sandwiches at least a part of the evaporation portion of the limiting member is smaller than the width of the second cooling unit in the direction perpendicular to the facing surface. The evaporation source device according to claim 1 or 3 , characterized in that.
請求項1から21のいずれか一項に記載の蒸発源装置と、
前記蒸発源装置が配置され、蒸着が行われる真空チャンバと、を備える
ことを特徴とする蒸着装置。
An evaporation source device according to any one of claims 1 to 21 ,
A vacuum chamber in which the evaporation source device is disposed and in which vapor deposition is performed, the vapor deposition device.
前記蒸着装置は、前記蒸発源装置が搭載される移動機構を有し、
前記移動機構を移動させて蒸着を行う
ことを特徴とする請求項22に記載の蒸着装置。
The vapor deposition device has a moving mechanism on which the evaporation source device is mounted,
The vapor deposition apparatus according to claim 22 , wherein vapor deposition is performed by moving the moving mechanism.
各々が請求項1から請求項21のいずれか一項の蒸発源装置を備える複数の蒸着装置と、
前記複数の蒸着装置が接続される基板搬送装置と、を備える蒸着システム。

A plurality of vapor deposition devices each comprising the evaporation source device according to any one of claims 1 to 21 ;
A substrate transport device to which the plurality of vapor deposition devices are connected.

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