[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

TWI452164B - Crucible and vacuum evaporating system - Google Patents

Crucible and vacuum evaporating system Download PDF

Info

Publication number
TWI452164B
TWI452164B TW098119613A TW98119613A TWI452164B TW I452164 B TWI452164 B TW I452164B TW 098119613 A TW098119613 A TW 098119613A TW 98119613 A TW98119613 A TW 98119613A TW I452164 B TWI452164 B TW I452164B
Authority
TW
Taiwan
Prior art keywords
bottom plate
side wall
crucible
film material
ventilation ducts
Prior art date
Application number
TW098119613A
Other languages
Chinese (zh)
Other versions
TW201043719A (en
Inventor
Shao Kai Pei
Original Assignee
Hon Hai Prec Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hon Hai Prec Ind Co Ltd filed Critical Hon Hai Prec Ind Co Ltd
Priority to TW098119613A priority Critical patent/TWI452164B/en
Publication of TW201043719A publication Critical patent/TW201043719A/en
Application granted granted Critical
Publication of TWI452164B publication Critical patent/TWI452164B/en

Links

Landscapes

  • Physical Vapour Deposition (AREA)

Description

坩堝及真空蒸鍍系統坩埚 and vacuum evaporation system

本發明涉及一種坩堝及使用該坩堝之真空蒸鍍系統。The present invention relates to a crucible and a vacuum evaporation system using the crucible.

真空蒸鍍是在真空室中,加熱坩堝中待形成薄膜之原材料,使其原子或分子從表面氣化逸出,形成蒸汽流,入射到待鍍膜底板表面,凝結形成固態薄膜之方法。Vacuum evaporation is a method in which a raw material of a film to be formed in a crucible is heated in a vacuum chamber, and atoms or molecules are vaporized from the surface to form a vapor stream, which is incident on the surface of the substrate to be coated and condensed to form a solid film.

以電子槍蒸鍍配合離子助鍍法(Ion Assistance Deposition, IAD)之制程中,是以電子槍轟擊膜料蒸發至待鍍膜底板上成膜。而放入坩堝中之膜料可以區分為塊狀和顆粒狀,而塊狀膜料相對於顆粒狀膜料價格昂貴,且受限於坩堝之形狀,必需重新設計塊狀膜料之形狀,從而增加了生產成本。為了節省成本生產過程中往往使用顆粒狀膜料,但由於膜料之顆粒之間之間隙以及顆粒之晶體之間之孔隙,使得膜料內殘餘有一定量之水氣,而這些水氣會導致後續鍍膜之噴發面積不均,從而影響膜層表面品質。In the process of electron gun evaporation and Ion Assistance Deposition (IAD), the film is ejected by an electron gun to evaporate onto the substrate to be coated. The film material placed in the crucible can be divided into a block shape and a granular shape, and the block film material is expensive relative to the granular film material, and is limited by the shape of the crucible, and the shape of the block film material must be redesigned, thereby Increased production costs. In order to save cost, the granular film material is often used in the production process, but due to the gap between the particles of the film material and the pores between the crystals of the particles, a certain amount of water gas remains in the film material, and the water gas will cause subsequent The ejected area of the coating is uneven, which affects the surface quality of the film.

有鑑於此,有必要提供一種可對顆粒狀膜料進行烘乾之坩堝及使用該坩堝之真空蒸鍍系統。In view of the above, it is necessary to provide a crucible for drying a granular film material and a vacuum evaporation system using the crucible.

一種坩堝,用於放置顆粒狀膜料;所述坩堝包括一底板、一側壁及複數通風管道;所述底板上設置有一載料區,用於承載顆粒狀膜料;所述側壁垂直固設於底板邊緣,並與所述底板形成一容置空間,所述側壁上開設有複數通風口;所述每個通風管道包括一進氣端和一出氣端;複數通風管道容置於所述容置空間內,且其進氣端固設於側壁上且與側壁上之通風口相連通,出氣端朝向於底板並圍繞所述載料區分佈。a crucible for placing a granular film material; the crucible comprises a bottom plate, a side wall and a plurality of ventilation ducts; the bottom plate is provided with a loading zone for carrying the granular film material; the side wall is vertically fixed Forming an accommodating space with the bottom plate, the side wall is provided with a plurality of vents; each of the ventilation ducts includes an air inlet end and an air outlet end; and the plurality of ventilation ducts are accommodated in the receiving In the space, the inlet end is fixed on the side wall and communicates with the vent on the side wall, and the outlet end is distributed toward the bottom plate and distributed around the loading area.

一種真空蒸鍍系統,其包括一蒸鍍腔、一底座、一坩堝及一熱風源;所述底座設置於蒸鍍腔內;所述坩堝設置於底座上,用於放置顆粒狀膜料;所述熱風源位於底座下方,該熱風源與坩堝相連通;所述坩堝包括一底板、一側壁及複數通風管道;所述底板上設置有一載料區,用於承載顆粒狀膜料;所述側壁垂直固設於底板邊緣,並與所述底板形成一容置空間,所述側壁上開設有複數通風口;所述每個通風管道包括一進氣端和一出氣端;複數通風管道容置於所述容置空間內,且其進氣端固設於側壁上且與側壁上之通風口相連通,出氣端朝向於底板並圍繞所述載料區分佈。A vacuum evaporation system, comprising: an evaporation chamber, a base, a stack and a hot air source; the base is disposed in the evaporation chamber; the crucible is disposed on the base for placing the granular film material; The hot air source is located under the base, and the hot air source is in communication with the crucible; the crucible comprises a bottom plate, a side wall and a plurality of ventilation ducts; the bottom plate is provided with a loading area for carrying the granular film material; Vertically fixed on the edge of the bottom plate and forming an accommodating space with the bottom plate, the side wall is provided with a plurality of vents; each of the ventilation ducts includes an air inlet end and an air outlet end; and the plurality of ventilation ducts are accommodated The accommodating space is fixed on the side wall and communicates with the vent on the side wall, and the air outlet end is distributed toward the bottom plate and distributed around the loading area.

與先前技術相比,本發明提供之坩堝及真空蒸鍍系統通過通風管道對放置於載料區中之顆粒狀膜料進行加熱,去除膜料間所含有之水氣,從而有效保證了鍍膜品質。Compared with the prior art, the crucible and the vacuum evaporation system provided by the invention heat the granular film material placed in the loading zone through the ventilation duct to remove the moisture contained in the film material, thereby effectively ensuring the coating quality. .

下面將結合附圖與實施例對本技術方案之背光模組固定治具作進一步詳細說明。The backlight module fixing jig of the present technical solution will be further described in detail below with reference to the accompanying drawings and embodiments.

如圖1所示,為本發明實施方式提供之一種坩堝10,用於放置顆粒狀膜料;其採用鎢、鉬或鉭等高溫耐熱金屬材料製成。所述坩堝10採用一體成型。As shown in FIG. 1 , a crucible 10 provided for an embodiment of the present invention is used for placing a granular film material; and it is made of a high temperature heat resistant metal material such as tungsten, molybdenum or niobium. The crucible 10 is integrally formed.

所述坩堝10包括一底板11、一側壁12及複數通風管道13。所述底板11為圓形結構,該底板11上靠近中心之位置處設置有一載料區111,用於承載顆粒狀膜料。所述側壁12由所述底板11邊緣垂直延伸而成,並與所述底板11形成一半封閉之容置空間14。所述側壁12上間隔均勻之開設有複數圓形通風口121。所述每一通風管道13包括一進氣端131和一出氣端132,複數通風管道13容置於所述容置空間14內,且每一通風管道13之進氣端131固設於側壁12上且與側壁12上之通風口121相連通。所述複數通風管道13之出氣端132朝向於底板11,且圍繞所述載料區111分佈。所述通風管道13與底板11形成一朝向於側壁12之銳角。The crucible 10 includes a bottom plate 11, a side wall 12, and a plurality of ventilation ducts 13. The bottom plate 11 has a circular structure, and a loading area 111 is disposed on the bottom plate 11 at a position close to the center for carrying the granular film material. The side wall 12 is vertically extended from the edge of the bottom plate 11 and forms a half-closed accommodating space 14 with the bottom plate 11. The side walls 12 are evenly spaced apart to provide a plurality of circular vents 121. Each of the ventilation ducts 13 includes an air inlet end 131 and an air outlet end 132. The plurality of air ducts 13 are received in the accommodating space 14, and the air inlet end 131 of each air duct 13 is fixed to the side wall 12. It is connected to the vent 121 on the side wall 12. The outlet end 132 of the plurality of ventilation ducts 13 faces the bottom plate 11 and is distributed around the loading zone 111. The ventilation duct 13 and the bottom plate 11 form an acute angle toward the side wall 12.

本實施方式中,所述坩堝10包括五個通風管道13,所述側壁12上對應所述通風管道13設有五個通風口121。所述五個通風管道13之出氣端132兩兩相互鄰接將所述載料區111環繞。In this embodiment, the crucible 10 includes five ventilation ducts 13 , and the side walls 12 are provided with five ventilation openings 121 corresponding to the ventilation ducts 13 . The outlet ends 132 of the five ventilation ducts 13 are adjacent to each other to surround the loading zone 111.

如圖2所示,本發明還提供一種使用所述坩堝10之真空蒸鍍系統100,所述真空蒸鍍系統100還包括一蒸鍍腔20、一底座30及一熱風源40;所述底座30設置於蒸鍍腔20內;所述坩堝10設置於底座30上;所述熱風源40位於底座30下方,該熱風源40與坩堝10之通風管道13相連通。As shown in FIG. 2, the present invention also provides a vacuum evaporation system 100 using the crucible 10, the vacuum evaporation system 100 further includes an evaporation chamber 20, a base 30, and a hot air source 40; 30 is disposed in the vapor deposition chamber 20; the crucible 10 is disposed on the base 30; the hot air source 40 is located below the base 30, and the hot air source 40 is in communication with the ventilation duct 13 of the crucible 10.

在鍍膜開始前,使用者將顆粒狀膜料放入到載料區111,然後打開熱風源40。由所述熱風源40產生之熱風經過通風管道13通入到坩堝10之載料區111,所述熱風通過對所述顆粒狀膜料進行烘烤,將位於顆粒之間之間隙以及顆粒之晶體之間之孔隙內之水氣蒸發帶走。Before the start of the coating, the user places the granular film material into the loading zone 111 and then opens the hot air source 40. The hot air generated by the hot air source 40 is introduced into the loading zone 111 of the crucible 10 through the ventilation duct 13, and the hot air is baked in the gap between the particles and the crystal of the particles by baking the granular film material. The water vapor in the pores evaporates away.

在鍍膜過程中,在電子槍之轟擊作用下,位於載料區111內之顆粒狀膜料部分變成融熔狀態,由於所述通風管道13與底板11之間保持一定之傾角,使得顆粒狀膜料以及融熔狀態膜料不會進入到通風管道13中,防下殘餘膜料對下次鍍膜之影響。In the coating process, under the action of the bombardment of the electron gun, the portion of the granular film material in the loading zone 111 becomes a molten state, and the granular film material is maintained due to a certain inclination angle between the ventilation duct 13 and the bottom plate 11. And the molten film material does not enter the ventilation duct 13, and the effect of the residual film on the next coating is prevented.

本發明實施方式提供之坩堝及真空蒸鍍系統通過通風管道對放置於載料區中之顆粒狀膜料進行加熱,去除膜料間所含有之水氣,從而有效保證了鍍膜品質。The crucible and vacuum evaporation system provided by the embodiment of the invention heats the granular film material placed in the loading zone through the ventilation duct to remove the moisture contained in the film material, thereby effectively ensuring the coating quality.

綜上所述,本發明確已符合發明專利之要件,遂依法提出專利申請。惟,以上所述者僅為本發明之較佳實施方式,自不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝之人士援依本發明之精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.

10‧‧‧坩堝
11‧‧‧底板
12‧‧‧側壁
13‧‧‧通風管道
14‧‧‧容置空間
111‧‧‧載料區
131‧‧‧進氣端
132‧‧‧出氣端
121‧‧‧通風口
20‧‧‧蒸鍍腔
30‧‧‧底座
40‧‧‧熱風源
10‧‧‧坩埚
11‧‧‧floor
12‧‧‧ side wall
13‧‧‧ ventilation duct
14‧‧‧ accommodating space
111‧‧‧Loading area
131‧‧‧ intake end
132‧‧‧Exhaust end
121‧‧‧ vents
20‧‧‧vapor plating chamber
30‧‧‧Base
40‧‧‧hot air source

圖1係本發明實施方式提供之坩堝之立體示意圖。FIG. 1 is a schematic perspective view of a crucible provided by an embodiment of the present invention.

圖2係使用圖1中所提供之坩堝之真空蒸鍍系統剖示圖。Figure 2 is a cross-sectional view of a vacuum evaporation system using the crucible provided in Figure 1.

10‧‧‧坩堝 10‧‧‧坩埚

11‧‧‧底板 11‧‧‧floor

12‧‧‧側壁 12‧‧‧ side wall

13‧‧‧通風管道 13‧‧‧ ventilation duct

14‧‧‧容置空間 14‧‧‧ accommodating space

111‧‧‧載料區 111‧‧‧Loading area

131‧‧‧進氣端 131‧‧‧ intake end

132‧‧‧出氣端 132‧‧‧Exhaust end

121‧‧‧通風口 121‧‧‧ vents

Claims (8)

一種坩堝,用於放置顆粒狀膜料;其改進在於:所述坩堝包括一底板、一側壁及複數通風管道;所述底板上設置有一載料區,用於承載顆粒狀膜料;所述側壁垂直固設於底板邊緣,並與所述底板形成一容置空間,所述側壁上開設有複數通風口;所述每個通風管道包括一進氣端和一出氣端;複數通風管道容置於所述容置空間內,且其進氣端固設於側壁上且與側壁上之通風口相連通,出氣端朝向於底板並圍繞所述載料區分佈。a crucible for placing a granular film material; the improvement is that the crucible comprises a bottom plate, a side wall and a plurality of ventilation ducts; the bottom plate is provided with a loading zone for carrying the granular film material; Vertically fixed on the edge of the bottom plate and forming an accommodating space with the bottom plate, the side wall is provided with a plurality of vents; each of the ventilation ducts includes an air inlet end and an air outlet end; and the plurality of ventilation ducts are accommodated The accommodating space is fixed on the side wall and communicates with the vent on the side wall, and the air outlet end is distributed toward the bottom plate and distributed around the loading area. 如申請專利範圍第1項所述之坩堝,其中:所述複數通風管道之出氣端兩兩相互鄰接將所述載料區環繞。The invention as claimed in claim 1, wherein: the outlet ends of the plurality of ventilation ducts are adjacent to each other to surround the loading zone. 如申請專利範圍第1項所述之坩堝,其中:所述底板為圓形結構。The invention as claimed in claim 1, wherein the bottom plate has a circular structure. 如申請專利範圍第1項所述之坩堝,其中:所述複數通風口均勻間隔開設於側壁。The invention as claimed in claim 1, wherein the plurality of vents are evenly spaced apart from the side wall. 如申請專利範圍第1項所述之坩堝,其中:所述坩堝採用一體成型。As described in claim 1, wherein the crucible is integrally formed. 如申請專利範圍第1項所述之坩堝,其中:所述坩堝採用高溫耐熱金屬材料製成。As described in claim 1, wherein the crucible is made of a high temperature heat resistant metal material. 如申請專利範圍第6項所述之坩堝,其中:所述高溫耐熱金屬材料為鎢、鉬或鉭中之一種。The invention as claimed in claim 6, wherein the high temperature heat resistant metal material is one of tungsten, molybdenum or tantalum. 一種真空蒸鍍系統,其包括一蒸鍍腔、一底座、一坩堝及一熱風源;所述底座設置於蒸鍍腔內;所述坩堝設置於底座上,用於放置顆粒狀膜料;所述熱風源位於底座下方,該熱風源與坩堝相連通;其改進在於:所述坩堝包括一底板、一側壁及複數通風管道;所述底板上設置有一載料區,用於承載顆粒狀膜料;所述側壁垂直固設於底板邊緣,並與所述底板形成一容置空間,所述側壁上開設有複數通風口;所述每個通風管道包括一進氣端和一出氣端;複數通風管道容置於所述容置空間內,且其進氣端固設於側壁上且與側壁上之通風口相連通,出氣端朝向於底板並圍繞所述載料區分佈。A vacuum evaporation system, comprising: an evaporation chamber, a base, a stack and a hot air source; the base is disposed in the evaporation chamber; the crucible is disposed on the base for placing the granular film material; The hot air source is located under the base, and the hot air source is connected to the crucible; the improvement is that the crucible comprises a bottom plate, a side wall and a plurality of ventilation ducts; and the bottom plate is provided with a loading area for carrying the granular film material The side wall is vertically fixed to the edge of the bottom plate, and forms an accommodating space with the bottom plate. The side wall is provided with a plurality of vents; each of the ventilation ducts includes an air inlet end and an air outlet end; The duct is received in the accommodating space, and the air inlet end is fixed on the side wall and communicates with the vent on the side wall, and the air outlet end is distributed toward the bottom plate and distributed around the loading area.
TW098119613A 2009-06-11 2009-06-11 Crucible and vacuum evaporating system TWI452164B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW098119613A TWI452164B (en) 2009-06-11 2009-06-11 Crucible and vacuum evaporating system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW098119613A TWI452164B (en) 2009-06-11 2009-06-11 Crucible and vacuum evaporating system

Publications (2)

Publication Number Publication Date
TW201043719A TW201043719A (en) 2010-12-16
TWI452164B true TWI452164B (en) 2014-09-11

Family

ID=45001032

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098119613A TWI452164B (en) 2009-06-11 2009-06-11 Crucible and vacuum evaporating system

Country Status (1)

Country Link
TW (1) TWI452164B (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4444728A (en) * 1982-01-21 1984-04-24 Engelhard Corporation Iridium-rhenium crucible

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4444728A (en) * 1982-01-21 1984-04-24 Engelhard Corporation Iridium-rhenium crucible

Also Published As

Publication number Publication date
TW201043719A (en) 2010-12-16

Similar Documents

Publication Publication Date Title
US20080014825A1 (en) Deposition apparatus
US7943886B2 (en) Heat treatment apparatus
KR102036597B1 (en) Linear evaporation source, apparatus having the same and method using the same
US9435022B2 (en) Deposition source
TWI452164B (en) Crucible and vacuum evaporating system
TW201221681A (en) Sputtering device
JP7572475B2 (en) Vapor deposition apparatus and method for coating a substrate in a vacuum chamber - Patents.com
JP2023528467A (en) Temperature controlled shield for evaporation source, material deposition apparatus, and method for depositing material on substrate
TW202217041A (en) Asymmetric exhaust pumping plate design for a semiconductor processing chamber
TWI689616B (en) Device for coating large substrates
TWI386499B (en) Evaporation equipment
CN101906610B (en) Crucible and vacuum evaporation system
JP3735287B2 (en) Vacuum deposition apparatus and vacuum deposition method
KR100581860B1 (en) Evaporation apparatus of thin layer
JP2014077161A (en) Film deposition apparatus and substrate holder
JP2011021264A (en) Film deposition system
JP2006292327A (en) Drier
JP4902123B2 (en) Evaporation source for organic materials and organic vapor deposition equipment
KR102195903B1 (en) Wafer baking device
TWI539021B (en) Evaporating device and vaccum evaporation equipment using the same
TWI541612B (en) Organic vacuum coating system and film forming method
KR20060064879A (en) Device for depositing electroluminescent layer
KR20240125604A (en) Coating source, coating equipment, and substrate coating method
JP2015168876A (en) Ion irradiation apparatus and film deposition apparatus
JP2008303403A (en) Tray structure for use in vacuum film-forming apparatus

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees