[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

WO2009020004A1 - レーザ加工方法、レーザ加工装置及びその製造方法 - Google Patents

レーザ加工方法、レーザ加工装置及びその製造方法 Download PDF

Info

Publication number
WO2009020004A1
WO2009020004A1 PCT/JP2008/063531 JP2008063531W WO2009020004A1 WO 2009020004 A1 WO2009020004 A1 WO 2009020004A1 JP 2008063531 W JP2008063531 W JP 2008063531W WO 2009020004 A1 WO2009020004 A1 WO 2009020004A1
Authority
WO
WIPO (PCT)
Prior art keywords
laser beam
laser working
light modulator
spatial light
aberration
Prior art date
Application number
PCT/JP2008/063531
Other languages
English (en)
French (fr)
Inventor
Makoto Nakano
Koji Kuno
Tetsuya Osajima
Takashi Inoue
Masayoshi Kumagai
Original Assignee
Hamamatsu Photonics K.K.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics K.K. filed Critical Hamamatsu Photonics K.K.
Priority to KR1020137001188A priority Critical patent/KR101402475B1/ko
Priority to KR1020147017879A priority patent/KR101564523B1/ko
Priority to KR1020157007615A priority patent/KR101711311B1/ko
Priority to US12/671,820 priority patent/US8134099B2/en
Priority to KR1020137026492A priority patent/KR101711247B1/ko
Priority to CN200880101826.XA priority patent/CN101772398B/zh
Priority to KR1020127010532A priority patent/KR101302336B1/ko
Priority to EP08791766.2A priority patent/EP2186596B1/en
Publication of WO2009020004A1 publication Critical patent/WO2009020004A1/ja
Priority to US13/362,781 priority patent/US9428413B2/en
Priority to US15/213,723 priority patent/US10622254B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
    • B23K26/046—Automatically focusing the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08—Devices involving relative movement between laser beam and workpiece
    • B23K26/083—Devices involving movement of the workpiece in at least one axial direction
    • B23K26/0853—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane
    • B23K26/0861—Devices involving movement of the workpiece in at least in two axial directions, e.g. in a plane in at least in three axial directions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
    • B23K26/127—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an enclosure
    • B23K26/128—Laser beam path enclosures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/22—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
    • B28D1/221—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising by thermic methods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B33/00—Severing cooled glass
    • C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
    • C03B33/0222—Scoring using a focussed radiation beam, e.g. laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49826—Assembling or joining

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mining & Mineral Resources (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Laser Beam Processing (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)

Abstract

　加工対象物１の内部に集光されるレーザ光Ｌの収差が所定の収差以下となるように反射型空間光変調器２０３によって変調されたレーザ光Ｌが加工対象物１に照射される。そのため、レーザ光Ｌの集光点Ｐを合わせる位置で発生するレーザ光Ｌの収差を極力小さくして、その位置でのレーザ光Ｌのエネルギー密度を高め、切断の起点としての機能が高い改質領域７を形成することができる。しかも、反射型空間光変調器２０３を用いるため、透過型空間光変調器に比べてレーザ光Ｌの利用効率を向上させることができる。このようなレーザ光Ｌの利用効率の向上は、切断の起点となる改質領域７を板状の加工対象物１に形成する場合、特に重要である。
PCT/JP2008/063531 2007-08-03 2008-07-28 レーザ加工方法、レーザ加工装置及びその製造方法 WO2009020004A1 (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
KR1020137001188A KR101402475B1 (ko) 2007-08-03 2008-07-28 레이저 가공 방법, 레이저 가공 장치 및 그 제조 방법
KR1020147017879A KR101564523B1 (ko) 2007-08-03 2008-07-28 레이저 가공 방법, 레이저 가공 장치 및 그 제조 방법
KR1020157007615A KR101711311B1 (ko) 2007-08-03 2008-07-28 레이저 가공 방법, 레이저 가공 장치 및 그 제조 방법
US12/671,820 US8134099B2 (en) 2007-08-03 2008-07-28 Laser working method, laser working apparatus, and its manufacturing method
KR1020137026492A KR101711247B1 (ko) 2007-08-03 2008-07-28 레이저 가공 방법, 레이저 가공 장치 및 그 제조 방법
CN200880101826.XA CN101772398B (zh) 2007-08-03 2008-07-28 激光加工方法、激光加工装置及其制造方法
KR1020127010532A KR101302336B1 (ko) 2007-08-03 2008-07-28 레이저 가공 방법, 레이저 가공 장치 및 그 제조 방법
EP08791766.2A EP2186596B1 (en) 2007-08-03 2008-07-28 Laser working method and laser working apparatus
US13/362,781 US9428413B2 (en) 2007-08-03 2012-01-31 Laser working method, laser working apparatus, and its manufacturing method
US15/213,723 US10622254B2 (en) 2007-08-03 2016-07-19 Laser working method, laser working apparatus, and its manufacturing method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007203529A JP4402708B2 (ja) 2007-08-03 2007-08-03 レーザ加工方法、レーザ加工装置及びその製造方法
JP2007-203529 2007-08-03

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/671,820 A-371-Of-International US8134099B2 (en) 2007-08-03 2008-07-28 Laser working method, laser working apparatus, and its manufacturing method
US13/362,781 Continuation US9428413B2 (en) 2007-08-03 2012-01-31 Laser working method, laser working apparatus, and its manufacturing method

Publications (1)

Publication Number Publication Date
WO2009020004A1 true WO2009020004A1 (ja) 2009-02-12

Family

ID=40341239

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/063531 WO2009020004A1 (ja) 2007-08-03 2008-07-28 レーザ加工方法、レーザ加工装置及びその製造方法

Country Status (7)

Country Link
US (3) US8134099B2 (ja)
EP (1) EP2186596B1 (ja)
JP (1) JP4402708B2 (ja)
KR (7) KR101013286B1 (ja)
CN (4) CN102019508B (ja)
TW (3) TWI573649B (ja)
WO (1) WO2009020004A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150021507A (ko) 2012-05-29 2015-03-02 하마마츠 포토닉스 가부시키가이샤 강화 유리판의 절단 방법
US9076855B2 (en) 2009-04-20 2015-07-07 Hamamatsu Photonics K.K. Laser machining method
US9457424B2 (en) 2008-11-28 2016-10-04 Hamamatsu Photonics K.K. Laser machining device
EP2529875A4 (en) * 2010-01-27 2017-09-06 Hamamatsu Photonics K.K. Laser processing method

Families Citing this family (135)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4659300B2 (ja) * 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
WO2003076119A1 (en) * 2002-03-12 2003-09-18 Hamamatsu Photonics K.K. Method of cutting processed object
TWI326626B (en) * 2002-03-12 2010-07-01 Hamamatsu Photonics Kk Laser processing method
EP3664131A3 (en) 2002-03-12 2020-08-19 Hamamatsu Photonics K. K. Substrate dividing method
TWI520269B (zh) 2002-12-03 2016-02-01 Hamamatsu Photonics Kk Cutting method of semiconductor substrate
FR2852250B1 (fr) * 2003-03-11 2009-07-24 Jean Luc Jouvin Fourreau de protection pour canule, un ensemble d'injection comportant un tel fourreau et aiguille equipee d'un tel fourreau
EP1609559B1 (en) * 2003-03-12 2007-08-08 Hamamatsu Photonics K. K. Laser beam machining method
US7605344B2 (en) * 2003-07-18 2009-10-20 Hamamatsu Photonics K.K. Laser beam machining method, laser beam machining apparatus, and laser beam machining product
JP4563097B2 (ja) 2003-09-10 2010-10-13 浜松ホトニクス株式会社 半導体基板の切断方法
JP4509578B2 (ja) 2004-01-09 2010-07-21 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP4598407B2 (ja) * 2004-01-09 2010-12-15 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP4601965B2 (ja) * 2004-01-09 2010-12-22 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP5138219B2 (ja) 2004-03-30 2013-02-06 浜松ホトニクス株式会社 レーザ加工方法
CN100548564C (zh) * 2004-08-06 2009-10-14 浜松光子学株式会社 激光加工方法及半导体装置
JP4762653B2 (ja) * 2005-09-16 2011-08-31 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP4907965B2 (ja) * 2005-11-25 2012-04-04 浜松ホトニクス株式会社 レーザ加工方法
JP4804911B2 (ja) * 2005-12-22 2011-11-02 浜松ホトニクス株式会社 レーザ加工装置
JP4907984B2 (ja) 2005-12-27 2012-04-04 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップ
JP5183892B2 (ja) 2006-07-03 2013-04-17 浜松ホトニクス株式会社 レーザ加工方法
US7897487B2 (en) 2006-07-03 2011-03-01 Hamamatsu Photonics K.K. Laser processing method and chip
JP4954653B2 (ja) 2006-09-19 2012-06-20 浜松ホトニクス株式会社 レーザ加工方法
CN102489883B (zh) * 2006-09-19 2015-12-02 浜松光子学株式会社 激光加工方法和激光加工装置
JP5101073B2 (ja) * 2006-10-02 2012-12-19 浜松ホトニクス株式会社 レーザ加工装置
JP5132911B2 (ja) * 2006-10-03 2013-01-30 浜松ホトニクス株式会社 レーザ加工方法
JP4964554B2 (ja) * 2006-10-03 2012-07-04 浜松ホトニクス株式会社 レーザ加工方法
EP2070636B1 (en) * 2006-10-04 2015-08-05 Hamamatsu Photonics K.K. Laser processing method
JP5336054B2 (ja) * 2007-07-18 2013-11-06 浜松ホトニクス株式会社 加工情報供給装置を備える加工情報供給システム
JP4402708B2 (ja) 2007-08-03 2010-01-20 浜松ホトニクス株式会社 レーザ加工方法、レーザ加工装置及びその製造方法
JP5449665B2 (ja) * 2007-10-30 2014-03-19 浜松ホトニクス株式会社 レーザ加工方法
JP5054496B2 (ja) * 2007-11-30 2012-10-24 浜松ホトニクス株式会社 加工対象物切断方法
JP5134928B2 (ja) * 2007-11-30 2013-01-30 浜松ホトニクス株式会社 加工対象物研削方法
JP5692969B2 (ja) 2008-09-01 2015-04-01 浜松ホトニクス株式会社 収差補正方法、この収差補正方法を用いたレーザ加工方法、この収差補正方法を用いたレーザ照射方法、収差補正装置、及び、収差補正プログラム
JP5241527B2 (ja) 2009-01-09 2013-07-17 浜松ホトニクス株式会社 レーザ加工装置
JP5241525B2 (ja) 2009-01-09 2013-07-17 浜松ホトニクス株式会社 レーザ加工装置
WO2010090111A1 (ja) 2009-02-09 2010-08-12 浜松ホトニクス株式会社 加工対象物切断方法
CN102317030B (zh) 2009-04-07 2014-08-20 浜松光子学株式会社 激光加工装置以及激光加工方法
JP5451238B2 (ja) * 2009-08-03 2014-03-26 浜松ホトニクス株式会社 レーザ加工方法
JP5775265B2 (ja) * 2009-08-03 2015-09-09 浜松ホトニクス株式会社 レーザ加工方法及び半導体装置の製造方法
US8932510B2 (en) 2009-08-28 2015-01-13 Corning Incorporated Methods for laser cutting glass substrates
US8946590B2 (en) 2009-11-30 2015-02-03 Corning Incorporated Methods for laser scribing and separating glass substrates
JP5479925B2 (ja) * 2010-01-27 2014-04-23 浜松ホトニクス株式会社 レーザ加工システム
JP5980471B2 (ja) * 2010-02-26 2016-08-31 浜松ホトニクス株式会社 収差補正方法、この収差補正方法を用いた顕微鏡観察方法、この収差補正方法を用いたレーザ照射方法、収差補正装置、及び、収差補正プログラム
JP2011201759A (ja) * 2010-03-05 2011-10-13 Namiki Precision Jewel Co Ltd 多層膜付き単結晶基板、多層膜付き単結晶基板の製造方法および素子製造方法
US8939766B2 (en) * 2010-04-19 2015-01-27 Alan Wong Dental tools for photo-curing of dental fillings
US20120264077A1 (en) * 2011-04-13 2012-10-18 Alan Wong Dental Tools for Photo-Curing of Dental Filings
DE112011100039B4 (de) * 2010-06-14 2014-01-02 Mitsubishi Electric Corp. Laserbearbeitungsvorrichtung und Laserbearbeitungsverfahren
JP5597051B2 (ja) * 2010-07-21 2014-10-01 浜松ホトニクス株式会社 レーザ加工方法
JP5597052B2 (ja) * 2010-07-21 2014-10-01 浜松ホトニクス株式会社 レーザ加工方法
WO2012014709A1 (ja) * 2010-07-26 2012-02-02 浜松ホトニクス株式会社 レーザ加工方法
JP2012037572A (ja) 2010-08-03 2012-02-23 Hamamatsu Photonics Kk レーザ光整形及び波面制御用光学系
TWI513670B (zh) 2010-08-31 2015-12-21 Corning Inc 分離強化玻璃基板之方法
US8722516B2 (en) 2010-09-28 2014-05-13 Hamamatsu Photonics K.K. Laser processing method and method for manufacturing light-emitting device
KR101124347B1 (ko) * 2011-01-25 2012-03-23 주식회사아톤 사각 방향으로 조사되는 스캔된 레이저 빔을 이용한 대상물의 가공 방법 및 그 장치
JP5848877B2 (ja) 2011-02-14 2016-01-27 浜松ホトニクス株式会社 レーザ光整形及び波面制御用光学系
WO2013039162A1 (ja) * 2011-09-16 2013-03-21 浜松ホトニクス株式会社 レーザ加工方法及びレーザ加工装置
JP2013063454A (ja) * 2011-09-16 2013-04-11 Hamamatsu Photonics Kk レーザ加工方法及びレーザ加工装置
JP5775811B2 (ja) * 2011-12-26 2015-09-09 浜松ホトニクス株式会社 レーザ加工装置及びレーザ加工方法
US10357850B2 (en) * 2012-09-24 2019-07-23 Electro Scientific Industries, Inc. Method and apparatus for machining a workpiece
TW201343296A (zh) * 2012-03-16 2013-11-01 Ipg Microsystems Llc 使一工件中具有延伸深度虛飾之雷射切割系統及方法
US9938180B2 (en) 2012-06-05 2018-04-10 Corning Incorporated Methods of cutting glass using a laser
TWI606880B (zh) * 2012-09-13 2017-12-01 Hamamatsu Photonics Kk Optical modulation control method, control program, control device, and laser light irradiation device
CN104620163B (zh) * 2012-09-13 2018-03-27 浜松光子学株式会社 光调制控制方法、控制程序、控制装置和激光照射装置
US9610653B2 (en) 2012-09-21 2017-04-04 Electro Scientific Industries, Inc. Method and apparatus for separation of workpieces and articles produced thereby
JP6036173B2 (ja) * 2012-10-31 2016-11-30 三星ダイヤモンド工業株式会社 レーザー加工装置
JP6121733B2 (ja) 2013-01-31 2017-04-26 浜松ホトニクス株式会社 レーザ加工装置及びレーザ加工方法
DE112014001653B4 (de) * 2013-03-27 2024-06-06 Hamamatsu Photonics K.K. Laserbearbeitungsvorrichtung und Laserbearbeitungsverfahren
JP6382797B2 (ja) 2013-03-27 2018-08-29 浜松ホトニクス株式会社 レーザ加工装置及びレーザ加工方法
CN105102179B (zh) 2013-03-27 2017-04-26 浜松光子学株式会社 激光加工装置及激光加工方法
KR102219653B1 (ko) 2013-03-27 2021-02-25 하마마츠 포토닉스 가부시키가이샤 레이저 가공 장치 및 레이저 가공 방법
US9764978B2 (en) * 2013-04-04 2017-09-19 Lpkf Laser & Electronics Ag Method and device for separating a substrate
US9812361B2 (en) * 2013-09-11 2017-11-07 Nxp B.V. Combination grinding after laser (GAL) and laser on-off function to increase die strength
JP6353683B2 (ja) * 2014-04-04 2018-07-04 浜松ホトニクス株式会社 レーザ加工装置及びレーザ加工方法
JP6272145B2 (ja) 2014-05-29 2018-01-31 浜松ホトニクス株式会社 レーザ加工装置及びレーザ加工方法
JP6258787B2 (ja) 2014-05-29 2018-01-10 浜松ホトニクス株式会社 レーザ加工装置及びレーザ加工方法
DE102014108259A1 (de) * 2014-06-12 2015-12-17 Scanlab Ag Vorrichtung zur Lasermaterialbearbeitung
JP2016054204A (ja) 2014-09-03 2016-04-14 株式会社ディスコ ウエーハの加工方法
JP2016055319A (ja) * 2014-09-10 2016-04-21 浜松ホトニクス株式会社 光照射装置および光照射方法
JP6320261B2 (ja) * 2014-09-26 2018-05-09 株式会社ディスコ ウエーハの加工方法
JP2016072274A (ja) * 2014-09-26 2016-05-09 株式会社ディスコ ウエーハの加工方法
JP6347714B2 (ja) 2014-10-02 2018-06-27 株式会社ディスコ ウエーハの加工方法
CN107000125B (zh) 2014-11-27 2022-08-12 西尔特克特拉有限责任公司 基于激光器的分离方法
JP6632203B2 (ja) * 2014-11-27 2020-01-22 株式会社東京精密 レーザー加工装置及びレーザー加工方法
JP6399913B2 (ja) * 2014-12-04 2018-10-03 株式会社ディスコ ウエーハの生成方法
JP6358941B2 (ja) * 2014-12-04 2018-07-18 株式会社ディスコ ウエーハの生成方法
JP2016129202A (ja) 2015-01-09 2016-07-14 株式会社ディスコ ウエーハの加工方法
JP2016129203A (ja) 2015-01-09 2016-07-14 株式会社ディスコ ウエーハの加工方法
DE102015003193A1 (de) * 2015-03-12 2016-09-15 Siltectra Gmbh Vorrichtung und Verfahren zum kontinuierlichen Behandeln eines Festkörpers mittels Laserstrahlen
JP6478821B2 (ja) * 2015-06-05 2019-03-06 株式会社ディスコ ウエーハの生成方法
BR112018002737B1 (pt) * 2015-08-14 2022-08-30 Laser Engineering Applications Dispositivo de usinagem e método para usinagem de um alvo
KR101825923B1 (ko) * 2015-09-03 2018-03-22 주식회사 이오테크닉스 레이저 가공장치 및 레이저 가공방법
DE102016215473B4 (de) * 2015-09-10 2023-10-26 Disco Corporation Verfahren zum Bearbeiten eines Substrats
JP6531345B2 (ja) * 2015-09-29 2019-06-19 株式会社東京精密 レーザー加工装置及びレーザー加工方法
JP6620976B2 (ja) * 2015-09-29 2019-12-18 株式会社東京精密 レーザー加工装置及びレーザー加工方法
CN105598594A (zh) * 2015-12-18 2016-05-25 中国电子科技集团公司第五十五研究所 一种复合结构SiC芯片的激光分离方法
US9984918B2 (en) * 2015-12-31 2018-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and manufacturing method thereof
JP6654435B2 (ja) * 2016-01-07 2020-02-26 株式会社ディスコ ウエーハ生成方法
US10518358B1 (en) 2016-01-28 2019-12-31 AdlOptica Optical Systems GmbH Multi-focus optics
JP6689631B2 (ja) 2016-03-10 2020-04-28 浜松ホトニクス株式会社 レーザ光照射装置及びレーザ光照射方法
TWI725133B (zh) * 2016-03-10 2021-04-21 日商濱松赫德尼古斯股份有限公司 雷射光照射裝置及雷射光照射方法
KR20190019125A (ko) * 2016-06-14 2019-02-26 에바나 테크놀로지스, 유에이비 웨이퍼 다이싱 또는 커팅을 위한 다중-세그먼트 포커싱 렌즈 및 레이저 가공 시스템
JP6768444B2 (ja) * 2016-10-14 2020-10-14 浜松ホトニクス株式会社 レーザ加工装置、及び、動作確認方法
JP6786374B2 (ja) * 2016-12-16 2020-11-18 株式会社スミテック レーザ加工装置及びレーザ加工方法
JP6831253B2 (ja) * 2017-01-27 2021-02-17 株式会社ディスコ レーザー加工装置
KR102356415B1 (ko) * 2017-03-06 2022-02-08 엘피케이에프 레이저 앤드 일렉트로닉스 악티엔게젤샤프트 전자기 방사선과 후속 에칭공정을 이용해 재료 안으로 적어도 하나의 리세스를 도입하기 위한 방법
CN107186364B (zh) * 2017-07-11 2024-02-02 华侨大学 无机械运动实现精确激光切割轨迹和显微细胞切割方法
JP7034621B2 (ja) * 2017-07-25 2022-03-14 浜松ホトニクス株式会社 レーザ加工装置
JP6955932B2 (ja) * 2017-08-25 2021-10-27 株式会社ディスコ レーザービームプロファイラユニット及びレーザー加工装置
JP2019051529A (ja) * 2017-09-13 2019-04-04 東芝メモリ株式会社 半導体製造装置
IT201700114962A1 (it) * 2017-10-12 2019-04-12 Automotive Lighting Italia Spa Attrezzatura di saldatura laser simultanea di un fanale automobilistico e metodo di saldatura laser simultanea di un fanale automobilistico
JP7222906B2 (ja) * 2017-11-07 2023-02-15 浜松ホトニクス株式会社 レーザ加工方法、及び、レーザ加工装置
JP7105058B2 (ja) 2017-12-05 2022-07-22 株式会社ディスコ ウェーハの加工方法
JP7088761B2 (ja) * 2018-07-05 2022-06-21 浜松ホトニクス株式会社 レーザ加工装置
JP7105639B2 (ja) * 2018-07-05 2022-07-25 浜松ホトニクス株式会社 レーザ加工装置
JP7404336B2 (ja) * 2018-07-25 2023-12-25 ノヴァ リミテッド 材料特性評価のための光学技術
JP7139050B2 (ja) * 2018-08-02 2022-09-20 株式会社ディスコ ウェーハの加工方法
KR102158106B1 (ko) * 2018-09-28 2020-09-21 주식회사 이솔 레이저 가공 방법
JP7319770B2 (ja) * 2018-10-04 2023-08-02 浜松ホトニクス株式会社 撮像装置、レーザ加工装置、及び、撮像方法
US10589445B1 (en) * 2018-10-29 2020-03-17 Semivation, LLC Method of cleaving a single crystal substrate parallel to its active planar surface and method of using the cleaved daughter substrate
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
JP2020163432A (ja) * 2019-03-29 2020-10-08 株式会社東京精密 レーザ加工装置の収差調整方法及び収差制御方法
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
JP6719074B2 (ja) * 2019-05-21 2020-07-08 株式会社東京精密 レーザー加工領域の確認装置及び確認方法
JP7334065B2 (ja) * 2019-05-28 2023-08-28 株式会社ディスコ チップの製造方法
JP7286464B2 (ja) * 2019-08-02 2023-06-05 株式会社ディスコ レーザー加工装置
JP7303078B2 (ja) * 2019-09-11 2023-07-04 浜松ホトニクス株式会社 レーザ加工装置及びレーザ加工方法
JP7386672B2 (ja) * 2019-11-15 2023-11-27 株式会社ディスコ レーザー加工装置及び位相パターンの調整方法
KR102235761B1 (ko) * 2019-12-31 2021-04-02 한국과학기술원 3d 프린팅 공정의 펨토초 레이저 기반 초음파 계측 장치 및 이를 구비한 3d 프린팅 시스템
KR102691408B1 (ko) * 2020-02-07 2024-08-05 살바그니니 이탈리아 에스.피.에이. 기계 공구를 위한 레이저 절단 헤드
CN112025088B (zh) * 2020-08-06 2022-04-15 武汉华工激光工程有限责任公司 一种激光光束像散补偿方法及激光加工系统
DE102020123785A1 (de) 2020-09-11 2022-03-17 Trumpf Laser- Und Systemtechnik Gmbh Verfahren zum Bearbeiten eines Materials
JPWO2022254844A1 (ja) * 2021-06-01 2022-12-08
WO2023101861A2 (en) * 2021-11-30 2023-06-08 Corning Incorporated Systems and methods for fabricating an article with an angled edge using a laser beam focal line
KR20240015188A (ko) 2022-07-26 2024-02-05 주식회사 메디포 소양증 완화 및 피부장벽 회복용 조성물

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0919784A (ja) * 1995-07-03 1997-01-21 Nec Corp レーザパターニング加工装置および加工方法
JP2001228449A (ja) * 2000-02-14 2001-08-24 Hamamatsu Photonics Kk レーザ集光装置及びレーザ加工装置
JP2005292662A (ja) 2004-04-02 2005-10-20 Hamamatsu Photonics Kk 波面補償装置、波面補償方法、プログラム、及び、記録媒体
WO2005106564A1 (ja) 2004-04-28 2005-11-10 Olympus Corporation レーザ加工装置
JP2006068762A (ja) 2004-08-31 2006-03-16 Univ Of Tokushima レーザー加工方法およびレーザー加工装置
JP2007141995A (ja) * 2005-11-16 2007-06-07 Denso Corp 半導体チップの製造方法

Family Cites Families (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6384789A (ja) * 1986-09-26 1988-04-15 Semiconductor Energy Lab Co Ltd 光加工方法
GB8819351D0 (en) * 1988-08-15 1988-09-14 Gersan Anstalt Making elongate cut using high energy radiation
JP3475947B2 (ja) 1991-05-21 2003-12-10 セイコーエプソン株式会社 光学装置
US5619381A (en) * 1995-06-02 1997-04-08 Texas Instruments Incorporated Offset zoom lens for reflective light modulators
US6075656A (en) * 1998-11-09 2000-06-13 Eastman Kodak Company High numerical aperture objective lens
JP2002182174A (ja) 2000-12-14 2002-06-26 Pioneer Electronic Corp 収差補正装置及び方法
JP2002049002A (ja) 2000-08-03 2002-02-15 Hamamatsu Photonics Kk レーザ加工装置
JP4659300B2 (ja) * 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
US6625181B1 (en) * 2000-10-23 2003-09-23 U.C. Laser Ltd. Method and apparatus for multi-beam laser machining
US6624880B2 (en) * 2001-01-18 2003-09-23 Micronic Laser Systems Ab Method and apparatus for microlithography
JP4880820B2 (ja) * 2001-01-19 2012-02-22 株式会社レーザーシステム レーザ支援加工方法
JP2002273583A (ja) * 2001-03-19 2002-09-25 Inst Of Physical & Chemical Res 透明媒質加工装置
US6717104B2 (en) * 2001-06-13 2004-04-06 The Regents Of The University Of California Programmable phase plate for tool modification in laser machining applications
JP3775250B2 (ja) 2001-07-12 2006-05-17 セイコーエプソン株式会社 レーザー加工方法及びレーザー加工装置
GB0121308D0 (en) * 2001-09-03 2001-10-24 Thomas Swan & Company Ltd Optical processing
JP4420672B2 (ja) 2001-10-25 2010-02-24 浜松ホトニクス株式会社 位相変調装置及び位相変調方法
WO2003076119A1 (en) * 2002-03-12 2003-09-18 Hamamatsu Photonics K.K. Method of cutting processed object
WO2004068553A2 (en) * 2003-01-29 2004-08-12 The Regents Of The University Of Michigan Method for forming nanoscale features
DE10325867B4 (de) * 2003-06-06 2013-08-01 Eberhard Piehler Projektionsvorrichtung
JP2005019667A (ja) 2003-06-26 2005-01-20 Disco Abrasive Syst Ltd レーザ光線を利用した半導体ウエーハの分割方法
JP2005103630A (ja) * 2003-10-02 2005-04-21 Matsushita Electric Ind Co Ltd レーザ加工装置及びレーザ加工方法
JP2005138143A (ja) * 2003-11-06 2005-06-02 Disco Abrasive Syst Ltd レーザ光線を利用する加工装置
JP2005189434A (ja) 2003-12-25 2005-07-14 Asahi Glass Co Ltd 波面制御素子及び液晶レンズ並びに収差補正素子
JP4456881B2 (ja) 2004-01-28 2010-04-28 株式会社リコー レーザ加工装置
JP4477893B2 (ja) 2004-02-13 2010-06-09 株式会社リコー レーザ加工方法及び装置、並びに、レーザ加工方法を使用した構造体の製造方法
JP2005268752A (ja) * 2004-02-19 2005-09-29 Canon Inc レーザ割断方法、被割断部材および半導体素子チップ
JP4576137B2 (ja) 2004-03-19 2010-11-04 オリンパス株式会社 顕微鏡
JP4536407B2 (ja) 2004-03-30 2010-09-01 浜松ホトニクス株式会社 レーザ加工方法及び加工対象物
JP4634089B2 (ja) * 2004-07-30 2011-02-16 浜松ホトニクス株式会社 レーザ加工方法
CN100548564C (zh) * 2004-08-06 2009-10-14 浜松光子学株式会社 激光加工方法及半导体装置
DE502004001824D1 (de) * 2004-09-30 2006-11-30 Trumpf Laser Gmbh & Co Kg Vorrichtung zur Fokussierung eines Laserstrahls
JP4761432B2 (ja) 2004-10-13 2011-08-31 株式会社リコー レーザ加工装置
JP4647965B2 (ja) 2004-10-22 2011-03-09 株式会社リコー レーザ加工方法及びレーザ加工装置及びにこれよって作製された構造体
JP2006131443A (ja) * 2004-11-04 2006-05-25 Shibuya Kogyo Co Ltd 脆性材料の割断方法とその装置
US8093530B2 (en) * 2004-11-19 2012-01-10 Canon Kabushiki Kaisha Laser cutting apparatus and laser cutting method
US7893384B2 (en) * 2004-12-07 2011-02-22 Chosen Technologies, Inc. Systems and methods for laser material manipulation
FR2884743B1 (fr) * 2005-04-20 2007-07-20 Impulsion Soc Par Actions Simp Dispositif de micro-usinage par laser femtoseconde avec conformation dynamique de faisceau
JP4407584B2 (ja) 2005-07-20 2010-02-03 セイコーエプソン株式会社 レーザ照射装置およびレーザスクライブ方法
JP2007029959A (ja) * 2005-07-22 2007-02-08 Olympus Corp レーザ加工機
JP4749799B2 (ja) 2005-08-12 2011-08-17 浜松ホトニクス株式会社 レーザ加工方法
CN100496855C (zh) * 2005-08-19 2009-06-10 中国科学院光电技术研究所 精密加工激光切割机
CN101248487A (zh) * 2005-08-26 2008-08-20 松下电器产业株式会社 促动器、光头装置及光信息装置
US7626138B2 (en) * 2005-09-08 2009-12-01 Imra America, Inc. Transparent material processing with an ultrashort pulse laser
JP4867293B2 (ja) 2005-11-04 2012-02-01 セイコーエプソン株式会社 レーザ加工装置
CN1966197B (zh) * 2005-11-18 2010-11-10 鸿富锦精密工业（深圳）有限公司 一种激光加工系统及加工方法
JP2007250598A (ja) * 2006-03-14 2007-09-27 Renesas Technology Corp 半導体装置の製造方法
US20070298529A1 (en) * 2006-05-31 2007-12-27 Toyoda Gosei, Co., Ltd. Semiconductor light-emitting device and method for separating semiconductor light-emitting devices
US8731013B2 (en) * 2007-01-24 2014-05-20 Raytheon Company Linear adaptive optics system in low power beam path and method
JP4402708B2 (ja) * 2007-08-03 2010-01-20 浜松ホトニクス株式会社 レーザ加工方法、レーザ加工装置及びその製造方法
US20090212030A1 (en) * 2008-02-25 2009-08-27 Optisolar, Inc., A Delaware Corporation Autofocus for Ablation Laser
JP5479924B2 (ja) * 2010-01-27 2014-04-23 浜松ホトニクス株式会社 レーザ加工方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0919784A (ja) * 1995-07-03 1997-01-21 Nec Corp レーザパターニング加工装置および加工方法
JP2001228449A (ja) * 2000-02-14 2001-08-24 Hamamatsu Photonics Kk レーザ集光装置及びレーザ加工装置
JP2005292662A (ja) 2004-04-02 2005-10-20 Hamamatsu Photonics Kk 波面補償装置、波面補償方法、プログラム、及び、記録媒体
WO2005106564A1 (ja) 2004-04-28 2005-11-10 Olympus Corporation レーザ加工装置
JP2006068762A (ja) 2004-08-31 2006-03-16 Univ Of Tokushima レーザー加工方法およびレーザー加工装置
JP2007141995A (ja) * 2005-11-16 2007-06-07 Denso Corp 半導体チップの製造方法

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
"Ultrashort Pulse Laser Microprocessing of Silicon", PRE-PRINTS OF THE NATIONAL MEETING OF JWS (JAPAN WELDING SOCIETY), vol. 66, 3991220, pages 72 - 73
D. DU; X. LIU; G. KORN; J. SQUIER; G. MOUROU: "Laser Induced Breakdown by Impact Ionization in Si02 with Pulse Widths from 7ns to 150fs", APPL PHYS LETT, vol. 64, no. 23, 6131019
See also references of EP2186596A4

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9457424B2 (en) 2008-11-28 2016-10-04 Hamamatsu Photonics K.K. Laser machining device
US9076855B2 (en) 2009-04-20 2015-07-07 Hamamatsu Photonics K.K. Laser machining method
TWI552822B (zh) * 2009-04-20 2016-10-11 Hamamatsu Photonics Kk Laser processing method
EP2529875A4 (en) * 2010-01-27 2017-09-06 Hamamatsu Photonics K.K. Laser processing method
KR20150021507A (ko) 2012-05-29 2015-03-02 하마마츠 포토닉스 가부시키가이샤 강화 유리판의 절단 방법

Also Published As

Publication number Publication date
TW201311384A (zh) 2013-03-16
KR101711311B1 (ko) 2017-02-28
TWI595953B (zh) 2017-08-21
KR20120048717A (ko) 2012-05-15
CN102528294B (zh) 2014-12-10
TW200911433A (en) 2009-03-16
CN102019508B (zh) 2016-05-18
KR20130114761A (ko) 2013-10-17
KR101302336B1 (ko) 2013-08-30
US8134099B2 (en) 2012-03-13
TW201323124A (zh) 2013-06-16
TWI573649B (zh) 2017-03-11
US10622254B2 (en) 2020-04-14
KR101564523B1 (ko) 2015-10-29
EP2186596A1 (en) 2010-05-19
CN102528294A (zh) 2012-07-04
CN103706950A (zh) 2014-04-09
CN102019508A (zh) 2011-04-20
KR20100044791A (ko) 2010-04-30
KR101212936B1 (ko) 2012-12-14
TWI394627B (zh) 2013-05-01
EP2186596A4 (en) 2015-04-15
KR20150039875A (ko) 2015-04-13
US20120196427A1 (en) 2012-08-02
KR101402475B1 (ko) 2014-06-05
US9428413B2 (en) 2016-08-30
CN101772398B (zh) 2014-02-12
KR20140092411A (ko) 2014-07-23
JP2009034723A (ja) 2009-02-19
US20110000897A1 (en) 2011-01-06
EP2186596B1 (en) 2016-06-08
KR20130012036A (ko) 2013-01-30
US20160329246A1 (en) 2016-11-10
JP4402708B2 (ja) 2010-01-20
KR101013286B1 (ko) 2011-02-09
KR101711247B1 (ko) 2017-02-28
CN101772398A (zh) 2010-07-07
KR20100113628A (ko) 2010-10-21
CN103706950B (zh) 2016-03-23

Similar Documents

Publication Publication Date Title
WO2009020004A1 (ja) レーザ加工方法、レーザ加工装置及びその製造方法
WO2009069510A1 (ja) 加工対象物切断方法
EP1777031A4 (en) LASER TREATMENT METHOD
WO2009057558A1 (ja) レーザ加工方法
WO2005081940A3 (en) Magnetically enhanced, inductively coupled plasma source for a focused ion beam system
WO2004075174A3 (en) System and method for cutting using a variable astigmatic focal beam spot
WO2009106272A3 (de) Verfahren und laserbearbeitungsgerät zur bearbeitung von biologischem gewebe
AU2003211581A1 (en) Method of cutting processed object
WO2009137703A3 (en) High brightness diode output methods and devices
WO2014144866A3 (en) Widely tunable swept source
WO2012155106A3 (en) Uv diode laser excitation in flow cytometry
PT2334465E (pt) Processo e instalação de corte a laser com modificação do factor de qualidade do feixe laser por um componente óptico difractivo
MX2007003742A (es) Metodo de trazado para materiales fragiles y aparato de trazado.
WO2009023280A3 (en) Laser machining method utilizing variable inclination angle
EP2372449A3 (en) Radiation source apparatus and DUV beam generation method
WO2010128481A3 (en) Light source comprising light deflecting particles
TWI318590B (en) Device and method to create a low divergence, high power laser beam for material processing applications
TW200802570A (en) Laser scribing method, laser scribing apparatus and substrate cut by using such method or apparatus
WO2014023828A3 (de) Anordnung zum bearbeiten von werkstücken mit einem laserstrahl
WO2009074140A3 (de) Verfahren zum keyhole-freien laserschmelzschneiden mittels vor- und nachlaufender laserstrahlen
EP2505992A3 (en) Method and apparatus for measuring pH of medium solution
WO2014089544A3 (en) High power lasers, wavelength conversions, and matching wavelengths use environments
CN203887388U (zh) 一种激光打标机
WO2008000961A3 (fr) Procédé et dispositif d'usinage d'une cible par faisceau laser femtoseconde
WO2011032129A3 (en) Multiple laser beam focusing head

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880101826.X

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08791766

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 20107001324

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

WWE Wipo information: entry into national phase

Ref document number: 2008791766

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 12671820

Country of ref document: US