JP2018010929A - 半導体モジュール、電力変換装置 - Google Patents
半導体モジュール、電力変換装置 Download PDFInfo
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- JP2018010929A JP2018010929A JP2016137730A JP2016137730A JP2018010929A JP 2018010929 A JP2018010929 A JP 2018010929A JP 2016137730 A JP2016137730 A JP 2016137730A JP 2016137730 A JP2016137730 A JP 2016137730A JP 2018010929 A JP2018010929 A JP 2018010929A
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- semiconductor chip
- insulating layer
- metal pattern
- bonding material
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 119
- 229910052751 metal Inorganic materials 0.000 claims abstract description 94
- 239000002184 metal Substances 0.000 claims abstract description 94
- 239000000463 material Substances 0.000 claims abstract description 71
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 2
- 230000017525 heat dissipation Effects 0.000 abstract description 15
- 238000002955 isolation Methods 0.000 abstract 4
- 238000009413 insulation Methods 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 description 9
- 239000000919 ceramic Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
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Abstract
Description
図1は、実施の形態1に係る半導体モジュールの断面図である。この半導体モジュールは絶縁基板12を備えている。絶縁基板12は、絶縁層12aと、絶縁層12aの上面に形成された第1金属パターン12bと、絶縁層12aの下面に形成された第2金属パターン12cとを有している。絶縁層12aの材料は例えばAlN、Al2O3又はSiNである。
図3は、実施の形態2に係る半導体モジュールの断面図である。半導体チップの厚さZ2は0.25mm以上0.35mm以下である。絶縁層12aの厚みZ3は0.8mm以上である。図4は、AlNで形成した絶縁層12aの厚みと、第1金属接合材16、20及び第2金属接合材14に及ぶひずみとの関係を示す図である。図4のAには、参考までに、半導体チップがSiで形成され、絶縁層AlNを0.653mmとしたときの、第1金属接合材16、20と第2金属接合材14の非弾性ひずみ増加分が示されている。
図5は、実施の形態3に係る半導体モジュールの断面図である。絶縁基板12と半導体チップ18はケース50に収容されている。ケース50は、放熱板10に固定されている。ケース50には端子52が固定されている。この端子52にはプリント基板54が固定されている。プリント基板54はケース50の中の絶縁基板12の直上にある。プリント基板54には導電性の材料でランド60が形成されている。このランド60には、制御IC64の端子64aがはんだ62で固定されている。制御IC64は、半導体チップ18を駆動させる駆動回路と、半導体チップ18の保護回路とを集積したICである。制御IC64はケース50の中に収容されている。
図6は、実施の形態4に係る電力変換装置を示す図である。電力変換装置は、実施の形態1〜3のいずれか1つで説明した半導体モジュールを少なくとも1つ有する。すなわち、電力変換装置の少なくとも一箇所は、実施の形態1〜3で説明した厚さの絶縁層12aと、半導体チップが形成される。図6には、半導体チップとして、6つのスイッチング素子と6つの還流ダイオードが設けられ、全体として3相交流インバータ回路を構成する電力変換装置が示されている。インバータ回路に限らず、コンバータ装置、サーボアンプ又は電源ユニットなどを形成してもよい。
Claims (7)
- 絶縁層と、前記絶縁層の上面に形成された第1金属パターンと、前記絶縁層の下面に形成された第2金属パターンとを有する絶縁基板と、
前記第1金属パターンに第1金属接合材で固定され、SiCによって形成された半導体チップと、
前記第2金属パターンに第2金属接合材で固定された放熱板と、を備え、
前記半導体チップの厚みは0.25mm以上0.35mm以下であり、
前記絶縁層の厚みは前記半導体チップの厚みに対し2.66倍以上5倍以下であることを特徴とする半導体モジュール。 - 絶縁層と、前記絶縁層の上面に形成された第1金属パターンと、前記絶縁層の下面に形成された第2金属パターンとを有する絶縁基板と、
前記第1金属パターンに第1金属接合材で固定され、SiCによって形成された半導体チップと、
前記第2金属パターンに第2金属接合材で固定された放熱板と、を備え、
前記半導体チップの厚さは0.25mm以上0.35mm以下であり、
前記絶縁層の厚みは0.8mm以上であることを特徴とする半導体モジュール。 - 前記絶縁層の材料は、AlN、Al2O3又はSiNであることを特徴とする請求項1又は2に記載の半導体モジュール。
- 前記絶縁基板と、前記半導体チップを収容し、前記放熱板に固定されたケースと、
前記半導体チップを駆動させる駆動回路と、前記半導体チップの保護回路とを集積した制御ICと、を備え、
前記制御ICは前記ケースの中に収容されたことを特徴とする請求項1〜3のいずれか1項に記載の半導体モジュール。 - 前記第2金属接合材は、前記半導体チップの直下にある直下部分と、前記直下部分につながり前記半導体チップの直下にない非直下部分とを有し、
前記第1金属接合材に導入されたクラックは、前記非直下部分に導入されたクラックより小規模であることを特徴とする請求項1〜4のいずれか1項に記載の半導体モジュール。 - 絶縁層と、前記絶縁層の上面に形成された第1金属パターンと、前記絶縁層の下面に形成された第2金属パターンとを有する絶縁基板と、前記第1金属パターンに第1金属接合材で固定され、SiCによって形成された半導体チップと、前記第2金属パターンに第2金属接合材で固定された放熱板と、を備え、前記半導体チップの厚みは0.25mm以上0.35mm以下であり、前記絶縁層の厚みは前記半導体チップの厚みに対し2.66倍以上5倍以下である半導体モジュールを、少なくとも1つ有することを特徴とする電力変換装置。
- 絶縁層と、前記絶縁層の上面に形成された第1金属パターンと、前記絶縁層の下面に形成された第2金属パターンとを有する絶縁基板と、前記第1金属パターンに第1金属接合材で固定され、SiCによって形成された半導体チップと、前記第2金属パターンに第2金属接合材で固定された放熱板と、を備え、前記半導体チップの厚さは0.25mm以上0.35mm以下であり、前記絶縁層の厚みは0.8mm以上である半導体モジュールを少なくとも1つ有することを特徴とする電力変換装置。
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