JP5626087B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5626087B2 JP5626087B2 JP2011089353A JP2011089353A JP5626087B2 JP 5626087 B2 JP5626087 B2 JP 5626087B2 JP 2011089353 A JP2011089353 A JP 2011089353A JP 2011089353 A JP2011089353 A JP 2011089353A JP 5626087 B2 JP5626087 B2 JP 5626087B2
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- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49861—Lead-frames fixed on or encapsulated in insulating substrates
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H01—ELECTRIC ELEMENTS
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Ceramic Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
図1は、本発明の実施の形態に係る半導体装置の平面図である。半導体装置10は、ケース12を備えている。ケース12にはCuベース14が固定されている。Cuベース14の上には複数の絶縁基板16が固定されている。絶縁基板16はAlNセラミックで形成されている。絶縁基板16の上には金属パターン18が形成されている。金属パターン18は銅で形成されたパターンである。
Claims (2)
- 絶縁基板と、
前記絶縁基板の上に形成された金属パターンと、
前記金属パターンの上に固定された電力端子と、
前記金属パターンの上に固定された複数のパワーチップと、
前記電力端子と前記複数のパワーチップの間の前記金属パターンの上に形成された、部品が固定されず表面に露出したはんだと、を備え、
前記複数のパワーチップのすべてが、前記電力端子と熱絶縁される距離だけ前記電力端子から離れたことを特徴とする半導体装置。 - 前記金属パターンは銅で形成されており、
前記パワーチップはIGBTチップ又はダイオードチップであり、
前記電力端子と、前記複数のパワーチップのうち前記電力端子と最も近接するパワーチップとの距離は、5mm以上であることを特徴とする請求項1に記載の半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011089353A JP5626087B2 (ja) | 2011-04-13 | 2011-04-13 | 半導体装置 |
US13/309,754 US8455997B2 (en) | 2011-04-13 | 2011-12-02 | High power semiconductor device |
DE102011090124.8A DE102011090124B4 (de) | 2011-04-13 | 2011-12-29 | Halbleitervorrichtung |
KR1020120034265A KR101365501B1 (ko) | 2011-04-13 | 2012-04-03 | 반도체장치 |
CN201210115290.5A CN102738134B (zh) | 2011-04-13 | 2012-04-10 | 半导体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011089353A JP5626087B2 (ja) | 2011-04-13 | 2011-04-13 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012222297A JP2012222297A (ja) | 2012-11-12 |
JP5626087B2 true JP5626087B2 (ja) | 2014-11-19 |
Family
ID=46935649
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011089353A Expired - Fee Related JP5626087B2 (ja) | 2011-04-13 | 2011-04-13 | 半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8455997B2 (ja) |
JP (1) | JP5626087B2 (ja) |
KR (1) | KR101365501B1 (ja) |
CN (1) | CN102738134B (ja) |
DE (1) | DE102011090124B4 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102034717B1 (ko) * | 2013-02-07 | 2019-10-21 | 삼성전자주식회사 | 파워모듈용 기판, 파워모듈용 터미널 및 이들을 포함하는 파워모듈 |
JP6759784B2 (ja) * | 2016-07-12 | 2020-09-23 | 三菱電機株式会社 | 半導体モジュール |
JP2020047725A (ja) * | 2018-09-18 | 2020-03-26 | トヨタ自動車株式会社 | 半導体装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5386576A (en) * | 1977-01-10 | 1978-07-31 | Nec Corp | Package for semiconductor element |
JP3215254B2 (ja) * | 1994-03-09 | 2001-10-02 | 株式会社東芝 | 大電力用半導体装置 |
TW408453B (en) * | 1997-12-08 | 2000-10-11 | Toshiba Kk | Package for semiconductor power device and method for assembling the same |
JP2000307058A (ja) | 1999-04-19 | 2000-11-02 | Mitsubishi Electric Corp | パワー半導体モジュール |
JP2008060430A (ja) * | 2006-08-31 | 2008-03-13 | Daikin Ind Ltd | 電力変換装置 |
KR101221807B1 (ko) * | 2006-12-29 | 2013-01-14 | 페어차일드코리아반도체 주식회사 | 전력 소자 패키지 |
JP5285348B2 (ja) * | 2008-07-30 | 2013-09-11 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | 回路装置 |
JP5182274B2 (ja) * | 2009-11-17 | 2013-04-17 | 三菱電機株式会社 | パワー半導体装置 |
JP5450192B2 (ja) * | 2010-03-24 | 2014-03-26 | 日立オートモティブシステムズ株式会社 | パワーモジュールとその製造方法 |
JP5467933B2 (ja) * | 2010-05-21 | 2014-04-09 | 株式会社東芝 | 半導体装置 |
-
2011
- 2011-04-13 JP JP2011089353A patent/JP5626087B2/ja not_active Expired - Fee Related
- 2011-12-02 US US13/309,754 patent/US8455997B2/en active Active
- 2011-12-29 DE DE102011090124.8A patent/DE102011090124B4/de active Active
-
2012
- 2012-04-03 KR KR1020120034265A patent/KR101365501B1/ko active IP Right Grant
- 2012-04-10 CN CN201210115290.5A patent/CN102738134B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE102011090124A1 (de) | 2012-10-18 |
US8455997B2 (en) | 2013-06-04 |
DE102011090124B4 (de) | 2018-10-04 |
CN102738134A (zh) | 2012-10-17 |
JP2012222297A (ja) | 2012-11-12 |
CN102738134B (zh) | 2015-09-16 |
US20120261811A1 (en) | 2012-10-18 |
KR101365501B1 (ko) | 2014-02-21 |
KR20120116859A (ko) | 2012-10-23 |
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