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CN107611111A - 半导体模块、电力转换装置 - Google Patents

半导体模块、电力转换装置 Download PDF

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Publication number
CN107611111A
CN107611111A CN201710565919.9A CN201710565919A CN107611111A CN 107611111 A CN107611111 A CN 107611111A CN 201710565919 A CN201710565919 A CN 201710565919A CN 107611111 A CN107611111 A CN 107611111A
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CN
China
Prior art keywords
semiconductor chip
insulating barrier
metal pattern
equal
thickness
Prior art date
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Granted
Application number
CN201710565919.9A
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English (en)
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CN107611111B (zh
Inventor
村上晴彦
米山玲
大月高实
山下秋彦
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Publication of CN107611111A publication Critical patent/CN107611111A/zh
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Abstract

本发明的目的在于，提供能够确保高半导体芯片散热性的半导体模块和电力转换装置。具备：绝缘基板，其具有绝缘层、形成于该绝缘层的上表面的第1金属图案、形成于该绝缘层的下表面的第2金属图案；半导体芯片，其通过第1金属接合材料固定于该第1金属图案，由SiC形成；以及散热板，其通过第2金属接合材料固定于该第2金属图案，该半导体芯片的厚度是大于或等于0.25mm且小于或等于0.35mm，该绝缘层的厚度相对于该半导体芯片的厚度是大于或等于2.66倍且小于或等于5倍。

Description

半导体模块、电力转换装置
技术领域
本发明涉及用于例如大电流的通断等的半导体模块、以及使用了该半导体模块的电力转换装置。
背景技术
在专利文献1中公开了一种绝缘基板，其具有陶瓷板以及形成于陶瓷板的上表面和下表面的电极。并且，在一个电极处利用金属接合材料固定有基座板，在另一个电极处利用金属接合材料固定有半导体元件。
专利文献1：日本特开2014-130875号公报
电力控制用半导体模块搭载有IGBT、MOSFET、及FWDi等半导体芯片。这样的半导体模块称作功率模块。功率模块具备：绝缘基板，其焊接于散热板；以及半导体芯片，其焊接于绝缘基板的金属图案。
功率模块的应用产品即逆变器设备要求低损耗化和小型化，因此半导体模块也要求低损耗化和小型化。低损耗化是通过将所要搭载的半导体芯片变薄，或对半导体芯片的构造进行优化而实现的。小型化是通过封装构造的优化而实现的。然而，如果将半导体模块小型化，则在半导体模块内半导体芯片密集，散热面积也变小，因此可能导致散热性的恶化。为了避免该散热性的恶化，想到将绝缘基板的绝缘层变薄。
最近的趋势是，如上述那样，为了半导体模块的低损耗化而将半导体芯片变薄，为了改善散热性而将绝缘基板的绝缘层变薄。
对于将半导体芯片和绝缘基板进行接合的第1焊料以及将绝缘基板和散热板进行接合的第2焊料而言，在使用半导体模块时在半导体芯片的接合温度和壳体温度之间产生大的温度变化的动作模式中，由于半导体芯片、绝缘基板及散热板的线膨胀系数差而引起热疲劳。如果因热疲劳而在第1焊料和第2焊料产生裂纹，则存在半导体芯片的散热性恶化，可靠性的寿命降低的问题。
特别是如果利用诸如SiC这样的与Si相比具有较硬的物理特性值的材料形成半导体芯片，则当温度变化时在第1焊料产生大的应力应变。如果将绝缘层变薄，则在第1焊料产生更大的应力应变，存在使半导体模块的寿命缩短的问题。
想到通过将半导体芯片的厚度变薄而降低在第1焊料产生的应力应变。然而，SiC是比Si硬的材质，因此为了将晶片变薄而使用的研磨工具的磨损剧烈，量产效率恶化。
发明内容
本发明是为了解决上述课题而提出的，其目的在于提供能够确保高半导体芯片散热性的半导体模块和电力转换装置。
本发明涉及的半导体模块的特征在于具备：绝缘基板，其具有绝缘层、形成于该绝缘层的上表面的第1金属图案、形成于该绝缘层的下表面的第2金属图案；半导体芯片，其通过第1金属接合材料固定于该第1金属图案，由SiC形成；以及散热板，其通过第2金属接合材料固定于该第2金属图案，该半导体芯片的厚度是大于或等于0.25mm且小于或等于0.35mm，该绝缘层的厚度相对于该半导体芯片的厚度是大于或等于2.66倍且小于或等于5倍。
发明的效果
根据本发明，对在半导体芯片的正下方形成的第1金属接合材料的裂纹进行抑制，容许在使用了SiC半导体芯片时形成得较大的基板即绝缘基板之下的第2金属接合材料的裂纹，从而能够确保高半导体芯片散热性。
附图说明
图1是实施方式1涉及的半导体模块的剖视图。
图2是半导体模块的剖视图和俯视图。
图3是实施方式2涉及的半导体模块的剖视图。
图4是表示绝缘层的厚度与在第1金属接合材料及第2金属接合材料产生的应变之间的关系的图。
图5是实施方式3涉及的半导体模块的剖视图。
图6是表示实施方式4涉及的电力转换装置的图。
标号的说明
10散热板，12绝缘基板，12a绝缘层，12b第1金属图案，12c第2金属图案，14第2金属接合材料，16、20第1金属接合材料，18、22半导体芯片
具体实施方式
参照附图，对本发明的实施方式涉及的半导体模块和电力转换装置进行说明。对相同或对应的结构要素标注相同的标号，有时省略重复的说明。
实施方式1.
图1是实施方式1涉及的半导体模块的剖视图。该半导体模块具备绝缘基板12。绝缘基板12具有：绝缘层12a、形成于绝缘层12a的上表面的第1金属图案12b、以及形成于绝缘层12a的下表面的第2金属图案12c。绝缘层12a的材料例如是AlN、Al2O3或者是SiN。
在第1金属图案12b处利用第1金属接合材料16、20固定有半导体芯片18、22。半导体芯片18、22由SiC形成。半导体芯片18例如是IGBT(Insulated Gate BipolarTransistor)，半导体芯片22例如是续流二极管。由SiC形成的半导体芯片或者晶片的厚度通常为0.25mm～0.35mm。例如，在日本特开2014-82361号公报的说明书第0005段中公开了n型SiC晶片的厚度是350μm。本发明的实施方式1涉及的半导体模块的半导体芯片18、22的厚度Z2为大于或等于0.25mm且小于或等于0.35mm。
在第2金属图案12c处利用第2金属接合材料14固定有散热板10。散热板10例如由金属等散热性高的材料形成。第1金属接合材料16、20和第2金属接合材料14例如是焊料。第2金属接合材料14具有处于半导体芯片18、22的正下方的正下部分14a以及与正下部分14a相连且不处于半导体芯片18、22的正下方的非正下部分14b。第2金属接合材料14的形成面积比第1金属接合材料16、20的形成面积大。
然而，根据绝缘层12a和半导体芯片18、22的物理特性值及线膨胀系数之间的关系，如果将绝缘层12a的厚度变厚，则半导体芯片18、22之下的第1金属接合材料16、22的应变降低，绝缘基板12之下的第2金属接合材料14的应变增加。这样的关系不是仅在利用氮化铝形成绝缘层12a、利用SiC形成半导体芯片18、22的情况下成立，而是通常成立的关系。
如果由于热循环导致半导体模块的各部分反复膨胀和收缩，则在第1金属接合材料16、22的端部形成裂纹，在第2金属接合材料14的端部形成裂纹。在图1中示出了形成于第1金属接合材料20的裂纹20a和形成于第2金属接合材料14的裂纹14c。
在图2中示出了半导体模块的剖视图和俯视图。在图2中，为了便于说明而表现出形成于第2金属接合材料14的裂纹14c和形成于第1金属接合材料20的裂纹20a。第1金属接合材料20的裂纹20a和半导体芯片22的散热性的恶化有直接关系。另一方面，对于第2金属接合材料14的裂纹14c，由于其形成于非正下部分14b，因此对半导体芯片22的散热性的影响小。
并且，裂纹20a、14c的规模如上所述，能够通过绝缘层12a的厚度调整。在本发明的实施方式1中，绝缘层12a的厚度Z1相对于半导体芯片18、22的厚度Z2为大于或等于2.66倍且小于或等于5倍。即，将绝缘层12a变厚，减少半导体芯片18、22之下的第1金属接合材料16、20的裂纹，使绝缘基板12之下的第2金属接合材料14的裂纹增加。
即，对使半导体芯片18、20的散热性大幅恶化的第1金属接合材料16、20的裂纹进行抑制，在对半导体芯片18、20的散热性贡献小的第2金属接合材料14的非正下部分14b生成裂纹。由此，能够确保高半导体芯片散热性。在将半导体芯片18、20的材料设为诸如SiC这样的硬的材料的情况下，在第1金属接合材料16、20处特别容易产生裂纹，但通过如上所述地对裂纹的产生容易度进行调整，从而能够抑制因第1金属接合材料16、20的热疲劳引起的裂纹或将其止于小规模。
这样，就本发明的实施方式1涉及的半导体模块而言，导入至第1金属接合材料16、20的裂纹的规模小于导入至第2金属接合材料14的裂纹。在第2金属接合材料14导入相对大规模的裂纹，但在俯视观察时将半导体芯片18、20配置在绝缘基板12的中央，从而能够在防止向正下部分14a形成裂纹的同时在非正下部分14b形成裂纹，因此不会大幅损害半导体芯片18、22的散热性。
由于在利用SiC形成半导体芯片18、20的情况下能够处理大电流，因此将绝缘基板12变大。在该情况下，第2金属接合材料14的非正下部分14b的面积变大，因此能够降低裂纹从非正下部分14b发展至正下部分14a的可能性。
本发明的实施方式1涉及的半导体模块能够在不丧失其特征的范围进行各种各样的变形。例如，固定于绝缘基板12的半导体芯片的数量是任意的。对以下的实施方式涉及的半导体模块和电力转换装置也同样适用。此外，以下的实施方式涉及的半导体模块和电力转换装置与实施方式1的类似点多，因此以与实施方式1的不同点为中心进行说明。
实施方式2.
图3是实施方式2涉及的半导体模块的剖视图。半导体芯片的厚度Z2是大于或等于0.25mm且小于或等于0.35mm。绝缘层12a的厚度Z3是大于或等于0.8mm。图4是表示由AlN形成的绝缘层12a的厚度与在第1金属接合材料16、20及第2金属接合材料14产生的应变之间的关系的图。在图4的A中，作为参考，示出在半导体芯片由Si形成，将绝缘层AlN设为0.653mm时，第1金属接合材料16、20和第2金属接合材料14的非弹性应变增加量。
在该情况下，在处于绝缘基板12之下的第2金属接合材料14处产生的应变比第1金属接合材料16、20大。然而，如图4的B所示，如果将半导体芯片的材料变更为SiC，则即使将由AlN形成的绝缘层12a的厚度保持0.653mm不变，在半导体芯片之下的第1金属接合材料16、20也将产生大的应变。其原因在于，SiC是比Si硬的材料。这样，在利用SiC形成半导体芯片的情况下，第1金属接合材料16、20容易产生大的应变。
然而，如图4的C、D、E所示，如果将绝缘层12a的厚度增加为0.8mm、1.0mm、1.5mm，则在第1金属接合材料16、20处产生的应变减少，在第2金属接合材料14处产生的应变增加。在本发明的实施方式2中，将绝缘层12a的厚度Z3设为大于或等于0.8mm，因此在第1金属接合材料16、20产生的应变始终比在第2金属接合材料14产生的应变小。具体地说，能够使第1金属接合材料16、20的应变与如图4的A所示的绝缘层为Si的情况等同或更小。由此，能够确保高半导体芯片散热性。
实施方式3.
图5是实施方式3涉及的半导体模块的剖视图。绝缘基板12和半导体芯片18收容于壳体50。壳体50固定于散热板10。在壳体50固定有端子52。在该端子52固定有印刷基板54。印刷基板54处于壳体50中的绝缘基板12的正上方。在印刷基板54利用导电性材料形成有焊垫60。在该焊垫60利用焊料62固定有控制IC 64的端子64a。控制IC 64是集成有半导体芯片18的保护电路以及对半导体芯片18进行驱动的驱动电路的IC。控制IC 64收容于壳体50中。
在印刷基板54连接有延伸至壳体50之外的端子56。端子56作为信号端子起作用。在壳体50固定有延伸至壳体50的外部的主端子70。在壳体50安装有盖74。将如上述那样在壳体50中内置有控制IC 64的半导体模块称作智能功率模块(IPM)，该控制IC 64集成有半导体芯片18的驱动电路和保护电路。在IPM的情况下，要求比半导体模块更小型化。如果伴随封装件的小型化而将芯片高集成化，则IPM内部的热密度变高，IPM工作时的芯片接合温度的温度变化变大。如果在这样的状况下采用实施方式1、2中所说明的结构，则能够确保高半导体芯片散热性。
实施方式4.
图6是表示实施方式4涉及的电力转换装置的图。电力转换装置至少具有1个在实施方式1～3的任一者中说明的半导体模块。即，在电力转换装置的至少一处，形成实施方式1～3中所说明的厚度的绝缘层12a和半导体芯片。在图6中示出作为半导体芯片而设置有6个开关元件和6个续流二极管，整体上构成3相交流逆变器电路的电力转换装置。不限于逆变器电路，也可以形成转换器装置、伺服放大器或者电源单元等。
在电力转换装置中使用实施方式1～3中的任意者的半导体模块，从而能够将半导体模块自身小型化、高密度化、高寿命化。因此，电力转换装置的框体及母线的设计制约减少，能够将电力转换装置的框体尺寸小型化。另外，以往，由于相对于逆变器的框体尺寸来说能够搭载的半导体模块的布局制约，逆变器的控制电力元件数受限，但通过应用本发明的半导体模块，从而使电力转换装置内的布局自由度提高，因此能够增加控制电力元件数，能够实现逆变器自身的功能的提高。
此外，在以上说明的各实施方式中说明的技术特征也可以适当地组合而使用。

Claims (7)

1.一种半导体模块，其特征在于，具备：
绝缘基板，其具有绝缘层、形成于所述绝缘层的上表面的第1金属图案、形成于所述绝缘层的下表面的第2金属图案；
半导体芯片，其通过第1金属接合材料固定于所述第1金属图案，由SiC形成；以及
散热板，其通过第2金属接合材料固定于所述第2金属图案，
所述半导体芯片的厚度是大于或等于0.25mm且小于或等于0.35mm，
所述绝缘层的厚度相对于所述半导体芯片的厚度是大于或等于2.66倍且小于或等于5倍。
2.一种半导体模块，其特征在于，具备：
绝缘基板，其具有绝缘层、形成于所述绝缘层的上表面的第1金属图案、形成于所述绝缘层的下表面的第2金属图案；
半导体芯片，其通过第1金属接合材料固定于所述第1金属图案，由SiC形成；以及
散热板，其通过第2金属接合材料固定于所述第2金属图案，
所述半导体芯片的厚度是大于或等于0.25mm且小于或等于0.35mm，
所述绝缘层的厚度是大于或等于0.8mm。
3.根据权利要求1或2所述的半导体模块，其特征在于，
所述绝缘层的材料是AlN、Al2O3或SiN。
4.根据权利要求1至3中任一项所述的半导体模块，其特征在于，具备：
壳体，其对所述绝缘基板和所述半导体芯片进行收容，固定于所述散热板；以及
控制IC，其集成有对所述半导体芯片进行驱动的驱动电路和所述半导体芯片的保护电路，
所述控制IC收容于所述壳体之中。
5.根据权利要求1至4中任一项所述的半导体模块，其特征在于，
所述第2金属接合材料具有处于所述半导体芯片的正下方的正下部分和与所述正下部分相连且不处于所述半导体芯片的正下方的非正下部分，
导入至所述第1金属接合材料的裂纹的规模小于导入至所述非正下部分的裂纹。
6.一种电力转换装置，其特征在于，
至少具有1个半导体模块，所述半导体模块具备：绝缘基板，其具有绝缘层、形成于所述绝缘层的上表面的第1金属图案、形成于所述绝缘层的下表面的第2金属图案；半导体芯片，其通过第1金属接合材料固定于所述第1金属图案，由SiC形成；以及散热板，其通过第2金属接合材料固定于所述第2金属图案，所述半导体芯片的厚度是大于或等于0.25mm且小于或等于0.35mm，所述绝缘层的厚度相对于所述半导体芯片的厚度是大于或等于2.66倍且小于或等于5倍。
7.一种电力转换装置，其特征在于，
至少具有1个半导体模块，所述半导体模块具备：绝缘基板，其具有绝缘层、形成于所述绝缘层的上表面的第1金属图案、形成于所述绝缘层的下表面的第2金属图案；半导体芯片，其通过第1金属接合材料固定于所述第1金属图案，由SiC形成；以及散热板，其通过第2金属接合材料固定于所述第2金属图案，所述半导体芯片的厚度是大于或等于0.25mm且小于或等于0.35mm，所述绝缘层的厚度是大于或等于0.8mm。
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