BRPI0918071A2 - dispositivo de emissão de luz. acondicionamento de resina, corpo moldado em resina, e métodos para fabricar o dispositivo de emissão de luz, o acondicionamento de resina e o corpo moldado em resina - Google Patents
dispositivo de emissão de luz. acondicionamento de resina, corpo moldado em resina, e métodos para fabricar o dispositivo de emissão de luz, o acondicionamento de resina e o corpo moldado em resinaInfo
- Publication number
- BRPI0918071A2 BRPI0918071A2 BRPI0918071-0A BRPI0918071A BRPI0918071A2 BR PI0918071 A2 BRPI0918071 A2 BR PI0918071A2 BR PI0918071 A BRPI0918071 A BR PI0918071A BR PI0918071 A2 BRPI0918071 A2 BR PI0918071A2
- Authority
- BR
- Brazil
- Prior art keywords
- resin
- light emitting
- emitting device
- molded body
- packaging
- Prior art date
Links
- 239000011347 resin Substances 0.000 title 4
- 229920005989 resin Polymers 0.000 title 4
- 238000004806 packaging method and process Methods 0.000 title 2
- 238000000034 method Methods 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/0053—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor combined with a final operation, e.g. shaping
- B29C45/0055—Shaping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C45/00—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor
- B29C45/14—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles
- B29C45/14639—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components
- B29C45/14655—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49575—Assemblies of semiconductor devices on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49582—Metallic layers on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C2793/00—Shaping techniques involving a cutting or machining operation
- B29C2793/009—Shaping techniques involving a cutting or machining operation after shaping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00012—Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12035—Zener diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008225408A JP5217800B2 (ja) | 2008-09-03 | 2008-09-03 | 発光装置、樹脂パッケージ、樹脂成形体並びにこれらの製造方法 |
JP2008-225408 | 2008-09-03 | ||
PCT/JP2009/004170 WO2010026716A1 (ja) | 2008-09-03 | 2009-08-27 | 発光装置、樹脂パッケージ、樹脂成形体並びにこれらの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
BRPI0918071A2 true BRPI0918071A2 (pt) | 2018-09-25 |
BRPI0918071B1 BRPI0918071B1 (pt) | 2020-02-18 |
Family
ID=41796902
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BRPI0918071-0A BRPI0918071B1 (pt) | 2008-09-03 | 2009-08-27 | Método de fabricação de dispositivo de emissão de luz |
Country Status (9)
Country | Link |
---|---|
US (10) | US8530250B2 (pt) |
EP (4) | EP3598509B1 (pt) |
JP (1) | JP5217800B2 (pt) |
KR (10) | KR102171595B1 (pt) |
CN (4) | CN105576091B (pt) |
BR (1) | BRPI0918071B1 (pt) |
DE (1) | DE202009019173U1 (pt) |
TW (6) | TWI726214B (pt) |
WO (1) | WO2010026716A1 (pt) |
Families Citing this family (127)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5217800B2 (ja) | 2008-09-03 | 2013-06-19 | 日亜化学工業株式会社 | 発光装置、樹脂パッケージ、樹脂成形体並びにこれらの製造方法 |
DE102009032253B4 (de) * | 2009-07-08 | 2022-11-17 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Elektronisches Bauteil |
KR101186648B1 (ko) * | 2009-12-21 | 2012-09-28 | 서울반도체 주식회사 | Led 패키지 및 그의 제조 방법 |
US9263315B2 (en) | 2010-03-30 | 2016-02-16 | Dai Nippon Printing Co., Ltd. | LED leadframe or LED substrate, semiconductor device, and method for manufacturing LED leadframe or LED substrate |
WO2011125753A1 (ja) | 2010-04-02 | 2011-10-13 | 株式会社カネカ | 硬化性樹脂組成物、硬化性樹脂組成物タブレット、成形体、半導体のパッケージ、半導体部品及び発光ダイオード |
DE102010029368A1 (de) | 2010-05-27 | 2011-12-01 | Osram Opto Semiconductors Gmbh | Elektronische Anordnung und Verfahren zum Herstellen einer elektronischen Anordnung |
JP5721969B2 (ja) * | 2010-06-11 | 2015-05-20 | 日東電工株式会社 | 光半導体装置のリフレクタ用エポキシ樹脂組成物およびそれを用いて得られる光半導体装置用リードフレーム、ならびに光半導体装置 |
JP5871174B2 (ja) * | 2010-07-16 | 2016-03-01 | 大日本印刷株式会社 | Led用リードフレームまたは基板、半導体装置、およびled用リードフレームまたは基板の製造方法 |
JP5888236B2 (ja) | 2010-09-03 | 2016-03-16 | 日亜化学工業株式会社 | 発光装置、回路基板、発光装置用パッケージアレイ、及び発光装置用パッケージアレイの製造方法 |
JP5803925B2 (ja) * | 2010-09-03 | 2015-11-04 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
BR112013005190B1 (pt) * | 2010-09-03 | 2022-08-23 | Nichia Corporation | Dispositivo de emissão de luz |
JP2012069885A (ja) * | 2010-09-27 | 2012-04-05 | Sanken Electric Co Ltd | 発光ダイオードの製造方法、発光ダイオード |
KR101162906B1 (ko) * | 2010-10-22 | 2012-07-05 | 파나소닉 주식회사 | Led 리플렉터용 불포화 폴리에스터 수지 조성물 및 이를 이용한 led 리플렉터, led 조명 기구 |
KR101778832B1 (ko) | 2010-11-02 | 2017-09-14 | 다이니폰 인사츠 가부시키가이샤 | Led 소자 탑재용 리드 프레임, 수지 부착 리드 프레임, 반도체 장치의 제조 방법 및 반도체 소자 탑재용 리드 프레임 |
JP5862572B2 (ja) | 2010-11-11 | 2016-02-16 | 日亜化学工業株式会社 | 発光装置と、回路基板の製造方法 |
JP5733743B2 (ja) * | 2010-12-15 | 2015-06-10 | 日東電工株式会社 | 光半導体装置 |
JP2014038876A (ja) * | 2010-12-15 | 2014-02-27 | Panasonic Corp | 半導体発光装置 |
JP5743184B2 (ja) * | 2011-01-12 | 2015-07-01 | 大日本印刷株式会社 | 半導体装置およびその製造方法ならびに照明装置 |
TW201250964A (en) * | 2011-01-27 | 2012-12-16 | Dainippon Printing Co Ltd | Resin-attached lead frame, method for manufacturing same, and lead frame |
WO2012108065A1 (ja) * | 2011-02-09 | 2012-08-16 | 株式会社東芝 | 白色光源およびそれを用いた白色光源システム |
JP5867417B2 (ja) | 2011-02-10 | 2016-02-24 | 日亜化学工業株式会社 | 発光装置、発光装置の製造方法、及びパッケージアレイ |
JP5834467B2 (ja) * | 2011-04-27 | 2015-12-24 | 日亜化学工業株式会社 | 発光装置 |
DE102011075032A1 (de) * | 2011-04-29 | 2012-10-31 | Osram Ag | Leuchtvorrichtung und Verfahren zum Herstellen einer Leuchtvorrichtung |
KR101092015B1 (ko) * | 2011-05-03 | 2011-12-08 | 주식회사 네패스신소재 | 열경화형 광반사용 수지 조성물, 이의 제조 방법, 이로부터 제조된 광반도체 소자 탑재용 반사판, 및 이를 포함하는 광반도체 장치 |
CN103562290A (zh) * | 2011-05-18 | 2014-02-05 | 纳沛斯新素材 | 热固型光反射用树脂组合物及其制备方法、利用其制备的光半导体元件搭载用反射板以及包括其的光半导体装置 |
CN102800783A (zh) * | 2011-05-25 | 2012-11-28 | 宏齐科技股份有限公司 | 具有对称反射框架的发光二极管封装结构及其制作方法 |
JP5753446B2 (ja) * | 2011-06-17 | 2015-07-22 | 株式会社東芝 | 半導体発光装置の製造方法 |
US8878215B2 (en) * | 2011-06-22 | 2014-11-04 | Lg Innotek Co., Ltd. | Light emitting device module |
JP5527286B2 (ja) * | 2011-06-29 | 2014-06-18 | 豊田合成株式会社 | 発光装置 |
JP2013038254A (ja) * | 2011-08-09 | 2013-02-21 | Fusheng Industrial Co Ltd | 発光ダイオードの熱硬化性樹脂フレームの製造方法 |
JP5893868B2 (ja) * | 2011-08-12 | 2016-03-23 | シャープ株式会社 | 発光装置 |
JP2013041950A (ja) * | 2011-08-12 | 2013-02-28 | Sharp Corp | 発光装置 |
TWI426628B (zh) * | 2011-08-30 | 2014-02-11 | Fusheng Electronics Corp | 發光二極體的支架結構及其製作方法(一) |
JP5505735B2 (ja) * | 2011-09-22 | 2014-05-28 | 復盛精密工業股▲ふん▼有限公司 | 発光ダイオードの支持フレーム構造およびその製作方法(二) |
US8796052B2 (en) * | 2012-02-24 | 2014-08-05 | Intersil Americas LLC | Optoelectronic apparatuses with post-molded reflector cups and methods for manufacturing the same |
CN103325889A (zh) * | 2012-03-19 | 2013-09-25 | 展晶科技(深圳)有限公司 | 发光二极管封装方法 |
CN103367344B (zh) * | 2012-04-11 | 2016-04-27 | 光宝电子(广州)有限公司 | 连板料片、发光二极管封装品及发光二极管灯条 |
TWI488341B (zh) * | 2012-04-11 | 2015-06-11 | Lite On Electronics Guangzhou | 連板料片、發光二極體封裝品及發光二極體燈條 |
TWI447961B (zh) * | 2012-04-16 | 2014-08-01 | Lextar Electronics Corp | 發光二極體封裝體 |
CN103378226A (zh) * | 2012-04-25 | 2013-10-30 | 展晶科技(深圳)有限公司 | 发光二极管的制造方法 |
CN103378265A (zh) * | 2012-04-28 | 2013-10-30 | 展晶科技(深圳)有限公司 | 发光模组载板的制造方法 |
JP2013239540A (ja) * | 2012-05-14 | 2013-11-28 | Shin Etsu Chem Co Ltd | 光半導体装置用基板とその製造方法、及び光半導体装置とその製造方法 |
TWI497779B (zh) * | 2012-07-11 | 2015-08-21 | Fusheng Electronics Corp | 發光二極體的支架結構製作方法(三) |
KR20140020446A (ko) * | 2012-08-08 | 2014-02-19 | 삼성디스플레이 주식회사 | 백라이트 어셈블리 및 이를 갖는 표시 장치 |
JP2014060343A (ja) * | 2012-09-19 | 2014-04-03 | Sanken Electric Co Ltd | 発光ダイオードの製造方法、発光ダイオード |
DE102012109139A1 (de) * | 2012-09-27 | 2014-03-27 | Osram Opto Semiconductors Gmbh | Gehäuse für ein optoelektronisches Bauelement, Elektronische Baugruppe, Verfahren zum Herstellen von Gehäusen und Verfahren zum Herstellen elektronischer Baugruppen |
NL2010379C2 (nl) | 2013-03-01 | 2014-09-03 | Besi Netherlands B V | Mal, drager met te omhullen elektronische componenten, drager met omhulde elektronische componenten, gesepareerd omhulde elektronisch component en werkwijze voor het omhullen van elektronische componenten. |
JP6131664B2 (ja) | 2013-03-25 | 2017-05-24 | 日亜化学工業株式会社 | 発光装置の製造方法および発光装置 |
DE102013206963A1 (de) | 2013-04-17 | 2014-11-06 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zu seiner Herstellung |
JP2014216622A (ja) * | 2013-04-30 | 2014-11-17 | 日亜化学工業株式会社 | 発光装置の製造方法 |
US9257616B2 (en) | 2013-08-27 | 2016-02-09 | Glo Ab | Molded LED package and method of making same |
US9142745B2 (en) | 2013-08-27 | 2015-09-22 | Glo Ab | Packaged LED device with castellations |
US8999737B2 (en) | 2013-08-27 | 2015-04-07 | Glo Ab | Method of making molded LED package |
CN104681690A (zh) * | 2013-12-03 | 2015-06-03 | 复盛精密工业股份有限公司 | 侧向型发光二极管的支架结构 |
JP6237174B2 (ja) | 2013-12-05 | 2017-11-29 | 日亜化学工業株式会社 | 発光装置 |
DE102013225552A1 (de) | 2013-12-11 | 2015-06-11 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
US11227982B2 (en) | 2014-01-08 | 2022-01-18 | Lumileds Llc | Deep molded reflector cup used as complete LED package |
JP6392654B2 (ja) | 2014-02-04 | 2018-09-19 | エイブリック株式会社 | 光センサ装置 |
DE102014103942B4 (de) * | 2014-03-21 | 2024-05-02 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines Gehäuses für ein elektronisches Bauelement und eines elektronischen Bauelements, Gehäuse für ein elektronisches Bauelement und elektronisches Bauelement |
JP6410083B2 (ja) * | 2014-07-31 | 2018-10-24 | シーシーエス株式会社 | Led実装用基板、led |
KR20160028014A (ko) | 2014-09-02 | 2016-03-11 | 삼성전자주식회사 | 반도체 소자 패키지 제조방법 |
JP6477328B2 (ja) * | 2014-09-29 | 2019-03-06 | 日亜化学工業株式会社 | パッケージの製造方法及び発光装置の製造方法、並びにパッケージ及び発光装置 |
EP3000579B1 (en) | 2014-09-29 | 2019-04-17 | Nichia Corporation | Method for manufacturing package, method for manufacturing light emitting device, package and light emitting device |
DE102014116133B4 (de) | 2014-11-05 | 2023-03-09 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement, Verfahren zum Herstellen eines optoelektronischen Bauelements und Verfahren zum Herstellen einer optoelektronischen Anordnung |
JP6458471B2 (ja) * | 2014-12-04 | 2019-01-30 | 株式会社カネカ | 発光素子実装用リードフレーム、これを用いた発光素子実装用樹脂成型体及び表面実装型発光装置 |
JP6428245B2 (ja) * | 2014-12-19 | 2018-11-28 | 日亜化学工業株式会社 | 発光装置 |
JP2015159324A (ja) * | 2015-04-30 | 2015-09-03 | 大日本印刷株式会社 | リフレクタ付きled用リードフレーム及びそれを用いた半導体装置の製造方法 |
JP2015149509A (ja) * | 2015-05-11 | 2015-08-20 | 大日本印刷株式会社 | 半導体装置およびその製造方法ならびに照明装置 |
WO2016188566A1 (en) * | 2015-05-26 | 2016-12-01 | Osram Opto Semiconductors Gmbh | Optoelectronic package device and method for producing the same |
JP2015195389A (ja) * | 2015-06-17 | 2015-11-05 | 大日本印刷株式会社 | 半導体装置およびその製造方法 |
JP2017027991A (ja) * | 2015-07-16 | 2017-02-02 | 大日本印刷株式会社 | 樹脂付きリードフレーム、樹脂付きリードフレームの多面付け体、光半導体装置、光半導体装置の多面付け体、樹脂付きリードフレーム用金型 |
JP6135721B2 (ja) * | 2015-08-10 | 2017-05-31 | 大日本印刷株式会社 | 樹脂付リードフレームおよびその製造方法、ならびに半導体装置およびその製造方法 |
TWI587548B (zh) * | 2015-09-07 | 2017-06-11 | 隆達電子股份有限公司 | 發光二極體封裝件 |
DE102015115824A1 (de) * | 2015-09-18 | 2017-03-23 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
US10366948B2 (en) * | 2016-03-17 | 2019-07-30 | Rohm Co., Ltd. | Semiconductor device and method for manufacturing the same |
WO2017209043A1 (ja) * | 2016-05-31 | 2017-12-07 | 三菱瓦斯化学株式会社 | 樹脂組成物、積層体、樹脂組成物層付き半導体ウェハ、樹脂組成物層付き半導体搭載用基板及び半導体装置 |
JP6724634B2 (ja) * | 2016-07-28 | 2020-07-15 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP6837314B2 (ja) * | 2016-11-01 | 2021-03-03 | 旭化成エレクトロニクス株式会社 | 半導体装置 |
US11049849B2 (en) | 2016-12-13 | 2021-06-29 | Lumileds Llc | Arrangement of LEDs on a leadframe |
TWI629431B (zh) * | 2017-02-17 | 2018-07-11 | 隆達電子股份有限公司 | 框架、應用其的發光裝置以及應用其的發光裝置的製作方法 |
US9991194B1 (en) * | 2017-04-18 | 2018-06-05 | Ubotic Company Limited | Sensor package and method of manufacture |
CN106935694A (zh) * | 2017-04-20 | 2017-07-07 | 江苏稳润光电科技有限公司 | 一种csp led封装方法 |
CN106887505B (zh) * | 2017-04-24 | 2019-07-16 | 芜湖聚飞光电科技有限公司 | 一种单面发光芯片级led的制作方法 |
US10153416B1 (en) | 2017-05-23 | 2018-12-11 | Radiant Choice Limited | Package body and light emitting device using same |
US10270020B2 (en) | 2017-06-20 | 2019-04-23 | Lextar Electronics Corporation | LED package structure |
JP7248379B2 (ja) * | 2017-07-24 | 2023-03-29 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
US10892211B2 (en) * | 2017-08-09 | 2021-01-12 | Semtech Corporation | Side-solderable leadless package |
JP6909976B2 (ja) * | 2017-09-07 | 2021-07-28 | 日亜化学工業株式会社 | 発光装置 |
JP6637003B2 (ja) * | 2017-09-08 | 2020-01-29 | サンコール株式会社 | バスバーアッセンブリ |
JP6879172B2 (ja) * | 2017-11-10 | 2021-06-02 | 日亜化学工業株式会社 | 発光装置 |
DE102017128457A1 (de) * | 2017-11-30 | 2019-06-06 | Osram Opto Semiconductors Gmbh | Herstellung optoelektronischer bauelemente |
US10862015B2 (en) | 2018-03-08 | 2020-12-08 | Samsung Electronics., Ltd. | Semiconductor light emitting device package |
JP6879262B2 (ja) * | 2018-05-08 | 2021-06-02 | 日亜化学工業株式会社 | 発光装置 |
CN110233199A (zh) * | 2018-08-31 | 2019-09-13 | 深圳市聚飞光电股份有限公司 | Led支架及其制作方法、led发光器件、发光装置 |
US11056615B2 (en) * | 2018-09-28 | 2021-07-06 | Nichia Corporation | Method for manufacturing light emitting module with concave surface light guide plate |
WO2020066074A1 (ja) * | 2018-09-28 | 2020-04-02 | 三井金属鉱業株式会社 | 多層配線板の製造方法 |
US11056624B2 (en) * | 2018-10-31 | 2021-07-06 | Nichia Corporation | Method of manufacturing package and method of manufacturing light-emitting device |
JP6717361B2 (ja) * | 2018-11-27 | 2020-07-01 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
US10971650B2 (en) | 2019-07-29 | 2021-04-06 | Lextar Electronics Corporation | Light emitting device |
US11152540B2 (en) | 2019-07-29 | 2021-10-19 | Lextar Electronics Corporation | Light emitting diode structure and method of manufacturing thereof |
CN112445024B (zh) * | 2019-09-03 | 2024-03-22 | 纬联电子科技(中山)有限公司 | 显示器及其背光模块与灯源支架 |
US11038088B2 (en) * | 2019-10-14 | 2021-06-15 | Lextar Electronics Corporation | Light emitting diode package |
JP7348521B2 (ja) | 2019-12-24 | 2023-09-21 | 日亜化学工業株式会社 | 発光装置 |
EP3848981A1 (en) * | 2020-01-10 | 2021-07-14 | Lumileds Holding B.V. | Led module, mold and method for manufacturing the same |
JP7396057B2 (ja) * | 2020-01-14 | 2023-12-12 | オムロン株式会社 | スイッチの製造方法及び光学ユニットの製造方法 |
DE102020107409B4 (de) * | 2020-03-18 | 2023-11-02 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Gehäuse für ein optoelektronisches halbleiterbauelement und optoelektronisches halbleiterbauelement |
EP3916073B1 (en) | 2020-05-29 | 2024-02-21 | Nichia Corporation | Light emitting device |
US20210399041A1 (en) * | 2020-06-18 | 2021-12-23 | Seoul Semiconductor Co., Ltd. | Light emitting module having a plurality of unit pixels, method of fabricating the same, and displaying apparatus having the same |
TWI838548B (zh) * | 2020-06-24 | 2024-04-11 | 方略電子股份有限公司 | 發光裝置 |
WO2022027470A1 (zh) * | 2020-08-06 | 2022-02-10 | 深圳市汇顶科技股份有限公司 | 一种芯片及芯片封装方法、电子设备 |
CN112248359A (zh) * | 2020-09-28 | 2021-01-22 | 徐君东 | 一种定向反光膜的制作工艺 |
CN112838153A (zh) * | 2021-02-02 | 2021-05-25 | 东莞市华彩威科技有限公司 | 一种led灯串、制造方法以及用于该led灯串中的led器件 |
CN114914351A (zh) * | 2021-02-08 | 2022-08-16 | 健策精密工业股份有限公司 | 导线架结构及其制造方法 |
TWI765569B (zh) * | 2021-02-08 | 2022-05-21 | 健策精密工業股份有限公司 | 導線架結構及其製造方法 |
US20240222573A1 (en) | 2021-04-26 | 2024-07-04 | Nichia Corporation | Light emitting device, light fixture and street light |
JP7502650B2 (ja) | 2021-04-26 | 2024-06-19 | 日亜化学工業株式会社 | 発光装置、灯具及び街路灯 |
JP7534642B2 (ja) | 2021-04-26 | 2024-08-15 | 日亜化学工業株式会社 | 発光装置、灯具及び街路灯 |
DE112021007723T5 (de) | 2021-05-26 | 2024-03-07 | Nichia Corporation | Oxidleuchtstoff, lichtemittierende Vorrichtung und Verfahren zur Herstellung von Oxidleuchtstoff |
JP7492142B2 (ja) | 2021-07-01 | 2024-05-29 | 日亜化学工業株式会社 | 発光装置、灯具及び照明器具 |
JP2023046654A (ja) | 2021-09-24 | 2023-04-05 | スタンレー電気株式会社 | 発光装置及び発光装置の製造方法 |
JP2023072239A (ja) | 2021-11-12 | 2023-05-24 | スタンレー電気株式会社 | 発光装置及びリードフレーム |
JP2023080391A (ja) | 2021-11-30 | 2023-06-09 | 日亜化学工業株式会社 | 酸化物蛍光体及び発光装置 |
JP2023082632A (ja) | 2021-12-02 | 2023-06-14 | スタンレー電気株式会社 | 半導体発光装置 |
US20230335691A1 (en) * | 2021-12-26 | 2023-10-19 | Seoul Viosys Co., Ltd. | Light emitting module and display apparatus having the same |
JP2024029785A (ja) * | 2022-08-23 | 2024-03-07 | Towa株式会社 | 半導体部品の製造方法及び半導体部品の製造装置 |
EP4339509A1 (en) | 2022-09-15 | 2024-03-20 | Nichia Corporation | Vehicle light-emitting device and vehicle lighting device |
DE102023104437A1 (de) * | 2023-02-23 | 2024-08-29 | Ams-Osram International Gmbh | Elektronisches Bauelement und Verfahren zum Montieren eines elektronischen Bauelements |
Family Cites Families (167)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5469068A (en) | 1977-11-14 | 1979-06-02 | Hitachi Ltd | Semiconductor device and its manufacture |
JPS60262476A (ja) | 1984-06-08 | 1985-12-25 | Matsushita Electric Ind Co Ltd | 発光素子 |
JP3088193B2 (ja) | 1992-06-05 | 2000-09-18 | 三菱電機株式会社 | Loc構造を有する半導体装置の製造方法並びにこれに使用するリードフレーム |
KR0128251Y1 (ko) | 1992-08-21 | 1998-10-15 | 문정환 | 리드 노출형 반도체 조립장치 |
US5302849A (en) | 1993-03-01 | 1994-04-12 | Motorola, Inc. | Plastic and grid array semiconductor device and method for making the same |
SG68542A1 (en) * | 1993-06-04 | 1999-11-16 | Seiko Epson Corp | Semiconductor device and manufacturing method thereof |
JPH0799345A (ja) | 1993-09-28 | 1995-04-11 | Nichia Chem Ind Ltd | 発光ダイオード |
JPH0837252A (ja) | 1994-07-22 | 1996-02-06 | Nec Corp | 半導体装置 |
KR100244853B1 (ko) | 1996-12-31 | 2000-02-15 | 구자홍 | 가변형 광원과 그를 이용한 이종 광디스크용광픽업 장치 |
US6274890B1 (en) * | 1997-01-15 | 2001-08-14 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and its manufacturing method |
TW467401U (en) | 1997-03-21 | 2001-12-01 | Rohm Co Ltd | Lead frame and the semiconductor device utilizing the lead frame |
WO1999000852A1 (fr) | 1997-06-27 | 1999-01-07 | Iwasaki Electric Co., Ltd. | Diode electroluminescente de type reflechissante |
JP3165078B2 (ja) | 1997-07-24 | 2001-05-14 | 協和化成株式会社 | 表面実装部品の製造方法 |
JP3472450B2 (ja) | 1997-09-04 | 2003-12-02 | シャープ株式会社 | 発光装置 |
JPH11145523A (ja) | 1997-11-05 | 1999-05-28 | Matsushita Electron Corp | 半導体発光装置 |
JP3877402B2 (ja) | 1997-11-28 | 2007-02-07 | 三洋電機株式会社 | 半導体装置の製造方法 |
JP3831504B2 (ja) | 1997-12-25 | 2006-10-11 | 三洋電機株式会社 | リードフレーム |
JP3877410B2 (ja) * | 1997-12-26 | 2007-02-07 | 三洋電機株式会社 | 半導体装置の製造方法 |
JPH11220170A (ja) * | 1998-01-29 | 1999-08-10 | Rohm Co Ltd | 発光ダイオード素子 |
JPH11214754A (ja) * | 1998-01-28 | 1999-08-06 | Rohm Co Ltd | 半導体発光装置 |
US6184544B1 (en) * | 1998-01-29 | 2001-02-06 | Rohm Co., Ltd. | Semiconductor light emitting device with light reflective current diffusion layer |
US6252254B1 (en) | 1998-02-06 | 2001-06-26 | General Electric Company | Light emitting device with phosphor composition |
JP4065051B2 (ja) * | 1998-04-17 | 2008-03-19 | スタンレー電気株式会社 | 表面実装ledとその製造方法 |
US6498099B1 (en) | 1998-06-10 | 2002-12-24 | Asat Ltd. | Leadless plastic chip carrier with etch back pad singulation |
JP2000156435A (ja) | 1998-06-22 | 2000-06-06 | Fujitsu Ltd | 半導体装置及びその製造方法 |
US7332375B1 (en) | 1998-06-24 | 2008-02-19 | Amkor Technology, Inc. | Method of making an integrated circuit package |
US6143981A (en) | 1998-06-24 | 2000-11-07 | Amkor Technology, Inc. | Plastic integrated circuit package and method and leadframe for making the package |
US6429583B1 (en) * | 1998-11-30 | 2002-08-06 | General Electric Company | Light emitting device with ba2mgsi2o7:eu2+, ba2sio4:eu2+, or (srxcay ba1-x-y)(a1zga1-z)2sr:eu2+phosphors |
JP3667125B2 (ja) | 1998-12-07 | 2005-07-06 | 日亜化学工業株式会社 | 光半導体装置とその製造方法 |
JP3217322B2 (ja) * | 1999-02-18 | 2001-10-09 | 日亜化学工業株式会社 | チップ部品型発光素子 |
JP3795248B2 (ja) | 1999-03-19 | 2006-07-12 | ローム株式会社 | チップ型発光装置 |
KR100425566B1 (ko) | 1999-06-23 | 2004-04-01 | 가부시키가이샤 시티즌 덴시 | 발광 다이오드 |
JP4390317B2 (ja) | 1999-07-02 | 2009-12-24 | 株式会社ルネサステクノロジ | 樹脂封止型半導体パッケージ |
JP4183859B2 (ja) | 1999-09-02 | 2008-11-19 | 株式会社アドバンテスト | 半導体基板試験装置 |
JP2001077235A (ja) | 1999-09-06 | 2001-03-23 | Mitsui High Tec Inc | 半導体素子搭載用基板 |
US6320251B1 (en) | 2000-01-18 | 2001-11-20 | Amkor Technology, Inc. | Stackable package for an integrated circuit |
JP3420153B2 (ja) | 2000-01-24 | 2003-06-23 | Necエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
JP3429246B2 (ja) | 2000-03-21 | 2003-07-22 | 株式会社三井ハイテック | リードフレームパターン及びこれを用いた半導体装置の製造方法 |
JP2001326295A (ja) | 2000-05-15 | 2001-11-22 | Rohm Co Ltd | 半導体装置および半導体装置製造用フレーム |
TW511401B (en) * | 2000-09-04 | 2002-11-21 | Sanyo Electric Co | Method for manufacturing circuit device |
JP4523138B2 (ja) * | 2000-10-06 | 2010-08-11 | ローム株式会社 | 半導体装置およびそれに用いるリードフレーム |
KR100371567B1 (ko) | 2000-12-08 | 2003-02-07 | 삼성테크윈 주식회사 | Ag 선도금을 이용한 반도체 패키지용 리드프레임 |
US6424024B1 (en) | 2001-01-23 | 2002-07-23 | Siliconware Precision Industries Co., Ltd. | Leadframe of quad flat non-leaded package |
US6627482B2 (en) * | 2001-02-09 | 2003-09-30 | Harvatek Corporation | Mass production technique for surface mount optical device with a focusing cup |
JP4505849B2 (ja) * | 2001-03-28 | 2010-07-21 | 住友電気工業株式会社 | 光通信モジュールの製造方法 |
JP2002314138A (ja) | 2001-04-09 | 2002-10-25 | Toshiba Corp | 発光装置 |
JP2002314143A (ja) * | 2001-04-09 | 2002-10-25 | Toshiba Corp | 発光装置 |
DE10117889A1 (de) | 2001-04-10 | 2002-10-24 | Osram Opto Semiconductors Gmbh | Leiterrahmen und Gehäuse für ein strahlungsemittierendes Bauelement, strahlungsemittierendes Bauelement sowie Verfahren zu dessen Herstellung |
JP4034073B2 (ja) | 2001-05-11 | 2008-01-16 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
JP3844196B2 (ja) | 2001-06-12 | 2006-11-08 | シチズン電子株式会社 | 発光ダイオードの製造方法 |
JP2003023134A (ja) | 2001-07-09 | 2003-01-24 | Hitachi Ltd | 半導体装置およびその製造方法 |
US6624007B2 (en) | 2001-07-26 | 2003-09-23 | Rohm Co., Ltd. | Method of making leadframe by mechanical processing |
JP4672201B2 (ja) | 2001-07-26 | 2011-04-20 | ローム株式会社 | 半導体装置の製造方法 |
JP2003110145A (ja) | 2001-09-27 | 2003-04-11 | Harvatek Corp | 発光ダイオード用の翼形表面実装パッケージ |
CA2358379A1 (en) | 2001-10-05 | 2003-04-05 | Elysium Broadband Inc. | Method and device for preventing signal loss in unterminated bridge taps |
DE10153259A1 (de) | 2001-10-31 | 2003-05-22 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
JP2003152296A (ja) | 2001-11-15 | 2003-05-23 | Shin Kobe Electric Mach Co Ltd | Led搭載プリント配線板 |
JP4009097B2 (ja) | 2001-12-07 | 2007-11-14 | 日立電線株式会社 | 発光装置及びその製造方法、ならびに発光装置の製造に用いるリードフレーム |
JP3939554B2 (ja) | 2002-01-15 | 2007-07-04 | シャープ株式会社 | 半導体用リードフレーム |
JP2003218398A (ja) | 2002-01-18 | 2003-07-31 | Citizen Electronics Co Ltd | 表面実装型発光ダイオード及びその製造方法 |
JP2003304000A (ja) | 2002-04-08 | 2003-10-24 | Citizen Electronics Co Ltd | 発光ダイオード用パッケージの製造方法 |
US7799611B2 (en) | 2002-04-29 | 2010-09-21 | Unisem (Mauritius) Holdings Limited | Partially patterned lead frames and methods of making and using the same in semiconductor packaging |
TW546799B (en) | 2002-06-26 | 2003-08-11 | Lingsen Precision Ind Ltd | Packaged formation method of LED and product structure |
DE10237084A1 (de) * | 2002-08-05 | 2004-02-19 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines elektrischen Leiterrahmens und Verfahren zum Herstellen eines oberflächenmontierbaren Halbleiterbauelements |
CN100533723C (zh) * | 2002-08-05 | 2009-08-26 | 奥斯兰姆奥普托半导体有限责任公司 | 电引线架的制造方法,表面安装的半导体器件的制造方法和引线架带 |
JP4059293B2 (ja) | 2002-09-05 | 2008-03-12 | 日亜化学工業株式会社 | 発光装置 |
TWI292961B (en) | 2002-09-05 | 2008-01-21 | Nichia Corp | Semiconductor device and an optical device using the semiconductor device |
US6879040B2 (en) | 2002-09-18 | 2005-04-12 | Agilent Technologies, Inc. | Surface mountable electronic device |
JP4280050B2 (ja) | 2002-10-07 | 2009-06-17 | シチズン電子株式会社 | 白色発光装置 |
JP3666594B2 (ja) | 2002-10-17 | 2005-06-29 | ローム株式会社 | パッケージ型電子部品におけるリード端子の切断方法 |
US7692206B2 (en) | 2002-12-06 | 2010-04-06 | Cree, Inc. | Composite leadframe LED package and method of making the same |
FR2849158B1 (fr) * | 2002-12-20 | 2005-12-09 | Valeo Vision | Module d'eclairage pour projecteur de vehicule |
JP3910171B2 (ja) * | 2003-02-18 | 2007-04-25 | シャープ株式会社 | 半導体発光装置、その製造方法および電子撮像装置 |
JP2006313943A (ja) * | 2003-02-18 | 2006-11-16 | Sharp Corp | 半導体発光装置、その製造方法および電子撮像装置 |
JP4341951B2 (ja) | 2003-05-07 | 2009-10-14 | シチズン電子株式会社 | 発光ダイオード及びそのパッケージ構造 |
US20050133808A1 (en) | 2003-09-11 | 2005-06-23 | Kyocera Corporation | Package for housing light-emitting element, light-emitting apparatus and illumination apparatus |
US7157744B2 (en) * | 2003-10-29 | 2007-01-02 | M/A-Com, Inc. | Surface mount package for a high power light emitting diode |
JP4792726B2 (ja) * | 2003-10-30 | 2011-10-12 | 日亜化学工業株式会社 | 半導体素子用支持体の製造方法 |
US7183588B2 (en) * | 2004-01-08 | 2007-02-27 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Light emission device |
US7288797B2 (en) * | 2004-01-20 | 2007-10-30 | Nichia Corporation | Semiconductor light emitting element |
JP3877732B2 (ja) * | 2004-02-26 | 2007-02-07 | 松下電器産業株式会社 | リードフレームおよびそれを用いた半導体装置およびその半導体装置の製造方法 |
US20050211991A1 (en) | 2004-03-26 | 2005-09-29 | Kyocera Corporation | Light-emitting apparatus and illuminating apparatus |
JP2005306952A (ja) | 2004-04-20 | 2005-11-04 | Japan Epoxy Resin Kk | 発光素子封止材用エポキシ樹脂組成物 |
JP4635471B2 (ja) | 2004-04-22 | 2011-02-23 | ソニー株式会社 | 半導体装置及びその製造方法、半導体装置の実装構造並びにリードフレーム |
JP2005317661A (ja) | 2004-04-27 | 2005-11-10 | Sharp Corp | 半導体発光装置およびその製造方法 |
JP2005322804A (ja) | 2004-05-10 | 2005-11-17 | Nitto Denko Corp | 光半導体装置 |
US7456499B2 (en) | 2004-06-04 | 2008-11-25 | Cree, Inc. | Power light emitting die package with reflecting lens and the method of making the same |
JP4359195B2 (ja) | 2004-06-11 | 2009-11-04 | 株式会社東芝 | 半導体発光装置及びその製造方法並びに半導体発光ユニット |
JP2006049442A (ja) | 2004-08-02 | 2006-02-16 | Sharp Corp | 半導体発光装置およびその製造方法 |
JP4593201B2 (ja) | 2004-08-20 | 2010-12-08 | 日立化成工業株式会社 | チップ部品型発光装置及びそのための配線基板 |
KR200373718Y1 (ko) | 2004-09-20 | 2005-01-21 | 주식회사 티씨오 | 정전기 방전 충격에 대한 보호 기능이 내장된 고휘도발광다이오드 |
WO2006033239A1 (ja) | 2004-09-22 | 2006-03-30 | Kabushiki Kaisha Toshiba | 発光装置とそれを用いたバックライトおよび液晶表示装置 |
US8816369B2 (en) * | 2004-10-29 | 2014-08-26 | Led Engin, Inc. | LED packages with mushroom shaped lenses and methods of manufacturing LED light-emitting devices |
JP5060707B2 (ja) | 2004-11-10 | 2012-10-31 | 日立化成工業株式会社 | 光反射用熱硬化性樹脂組成物 |
JP4329678B2 (ja) | 2004-11-11 | 2009-09-09 | 株式会社デンソー | 半導体装置に用いるリードフレームの製造方法 |
JP4608294B2 (ja) | 2004-11-30 | 2011-01-12 | 日亜化学工業株式会社 | 樹脂成形体及び表面実装型発光装置並びにそれらの製造方法 |
KR100638721B1 (ko) | 2005-01-28 | 2006-10-30 | 삼성전기주식회사 | 수지 흐름 개선용 리드 프레임 구조를 갖는 측면형발광다이오드 패키지 |
JP4651008B2 (ja) * | 2005-02-01 | 2011-03-16 | シチズン電子株式会社 | 発光ダイオード |
JP2006278427A (ja) | 2005-03-28 | 2006-10-12 | Matsushita Electric Works Ltd | 光結合素子およびそれに用いるリードフレームならびに光結合素子の製造方法 |
JP4857594B2 (ja) | 2005-04-26 | 2012-01-18 | 大日本印刷株式会社 | 回路部材、及び回路部材の製造方法 |
JP2006324410A (ja) | 2005-05-18 | 2006-11-30 | Showa Denko Kk | 発光ダイオード封止材用樹脂組成物 |
CN100519132C (zh) * | 2005-05-24 | 2009-07-29 | 株式会社村田制作所 | 嵌件成型品的制造方法和设备 |
KR100593945B1 (ko) | 2005-05-30 | 2006-06-30 | 삼성전기주식회사 | 고출력 led 패키지 및 그 제조방법 |
KR100638868B1 (ko) | 2005-06-20 | 2006-10-27 | 삼성전기주식회사 | 금속 반사 층을 형성한 엘이디 패키지 및 그 제조 방법 |
JP2007005722A (ja) | 2005-06-27 | 2007-01-11 | Toshiba Corp | 光半導体素子用外囲器およびそれを用いた光半導体装置 |
JP5392805B2 (ja) | 2005-06-28 | 2014-01-22 | 東レ・ダウコーニング株式会社 | 硬化性オルガノポリシロキサン樹脂組成物および光学部材 |
JP4739842B2 (ja) | 2005-07-25 | 2011-08-03 | スタンレー電気株式会社 | 表面実装型led |
EP1914811B2 (en) | 2005-08-04 | 2016-01-13 | Nichia Corporation | Light-emitting device, method for manufacturing same, molded body and sealing member |
JP4857709B2 (ja) * | 2005-10-25 | 2012-01-18 | 日亜化学工業株式会社 | 発光装置 |
TWI271835B (en) | 2005-11-07 | 2007-01-21 | High Power Lighting Corp | Packaging structure of high power LED chip and method of manufacturing the same |
JP2007134376A (ja) | 2005-11-08 | 2007-05-31 | Akita Denshi Systems:Kk | 発光ダイオード装置及びその製造方法 |
KR100637476B1 (ko) | 2005-11-09 | 2006-10-23 | 알티전자 주식회사 | 측면발광 다이오드 및 그 제조방법 |
US7943431B2 (en) * | 2005-12-02 | 2011-05-17 | Unisem (Mauritius) Holdings Limited | Leadless semiconductor package and method of manufacture |
US20070126020A1 (en) | 2005-12-03 | 2007-06-07 | Cheng Lin | High-power LED chip packaging structure and fabrication method thereof |
TW200741905A (en) * | 2005-12-28 | 2007-11-01 | Renesas Tech Corp | Semiconductor device manufacturing method |
JP5232369B2 (ja) * | 2006-02-03 | 2013-07-10 | 日立化成株式会社 | 光半導体素子搭載用パッケージ基板の製造方法およびこれを用いた光半導体装置の製造方法 |
JP2007297601A (ja) | 2006-04-06 | 2007-11-15 | Hitachi Chem Co Ltd | 光反射用熱硬化性樹脂組成物、これを用いた光半導体素子搭載用基板とその製造方法および光半導体装置 |
KR100735325B1 (ko) | 2006-04-17 | 2007-07-04 | 삼성전기주식회사 | 발광다이오드 패키지 및 그 제조방법 |
JP4952233B2 (ja) * | 2006-04-19 | 2012-06-13 | 日亜化学工業株式会社 | 半導体装置 |
KR100775574B1 (ko) | 2006-04-20 | 2007-11-15 | 알티전자 주식회사 | 고효율 발광 다이오드 패키지 |
JP2007294506A (ja) | 2006-04-21 | 2007-11-08 | Matsushita Electric Ind Co Ltd | 放熱基板とその製造方法及び、これを用いた発光モジュール及び表示装置 |
US9502624B2 (en) | 2006-05-18 | 2016-11-22 | Nichia Corporation | Resin molding, surface mounted light emitting apparatus and methods for manufacturing the same |
CN102983248B (zh) * | 2006-06-02 | 2017-11-14 | 日立化成株式会社 | 光半导体元件搭载用封装及使用其的光半导体装置 |
US8044418B2 (en) | 2006-07-13 | 2011-10-25 | Cree, Inc. | Leadframe-based packages for solid state light emitting devices |
JP5233186B2 (ja) | 2006-07-25 | 2013-07-10 | 日立化成株式会社 | 熱硬化性光反射用樹脂組成物、これを用いた光半導体素子搭載用基板とその製造方法および光半導体装置 |
US8092735B2 (en) * | 2006-08-17 | 2012-01-10 | 3M Innovative Properties Company | Method of making a light emitting device having a molded encapsulant |
US7763478B2 (en) * | 2006-08-21 | 2010-07-27 | Cree, Inc. | Methods of forming semiconductor light emitting device packages by liquid injection molding |
KR100773350B1 (ko) | 2006-08-29 | 2007-11-05 | 삼성전자주식회사 | 설비의 이상패턴 규명을 위한 기준정보형성방법 및 이를이용한 반도체 제조설비의 모니터링 방법 |
US7485480B2 (en) | 2006-09-21 | 2009-02-03 | Harvatek Corporation | Method of manufacturing high power light-emitting device package and structure thereof |
JP5298468B2 (ja) * | 2006-09-26 | 2013-09-25 | 日立化成株式会社 | 熱硬化性光反射用樹脂組成物、これを用いた光半導体素子搭載用基板とその製造方法および光半導体装置 |
JP5564162B2 (ja) * | 2006-09-29 | 2014-07-30 | フューチャー ライト リミテッド ライアビリティ カンパニー | 発光ダイオード装置 |
TWI311824B (en) * | 2006-10-02 | 2009-07-01 | Ind Tech Res Inst | Light emitting diode package structure |
US8088635B2 (en) | 2006-10-17 | 2012-01-03 | C.I. Kasei Company, Limited | Vertical geometry light emitting diode package aggregate and production method of light emitting device using the same |
JP2008108958A (ja) | 2006-10-26 | 2008-05-08 | C I Kasei Co Ltd | 発光装置および発光装置の製造方法 |
JP2008103460A (ja) | 2006-10-18 | 2008-05-01 | Sony Corp | 半導体パッケージ及びその製造方法 |
US7999277B2 (en) | 2006-11-08 | 2011-08-16 | C. I. Kasei Company, Limited | Light emitting device and production method of same |
JP5023781B2 (ja) | 2006-11-13 | 2012-09-12 | 日亜化学工業株式会社 | 発光装置 |
WO2008059856A1 (en) * | 2006-11-15 | 2008-05-22 | Hitachi Chemical Co., Ltd. | Heat curable resin composition for light reflection, process for producing the resin composition, and optical semiconductor element mounting substrate and optical semiconductor device using the resin composition |
JP2008130735A (ja) | 2006-11-20 | 2008-06-05 | C I Kasei Co Ltd | 発光装置の製造方法 |
JP4961978B2 (ja) | 2006-11-30 | 2012-06-27 | 日亜化学工業株式会社 | 発光装置およびその製造方法 |
US7679099B2 (en) | 2006-12-04 | 2010-03-16 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Low thermal resistance high power LED |
WO2008078791A1 (ja) | 2006-12-27 | 2008-07-03 | Showa Denko K.K. | 発光装置の製造方法 |
KR101026914B1 (ko) | 2006-12-28 | 2011-04-04 | 니치아 카가쿠 고교 가부시키가이샤 | 발광 장치, 패키지, 발광 장치의 제조 방법, 패키지의 제조방법 및 패키지 제조용 금형 |
EP2109157B1 (en) | 2006-12-28 | 2018-11-28 | Nichia Corporation | Light emitting device and method for manufacturing the same |
JP5380774B2 (ja) | 2006-12-28 | 2014-01-08 | 日亜化学工業株式会社 | 表面実装型側面発光装置及びその製造方法 |
JP4872683B2 (ja) | 2007-01-29 | 2012-02-08 | 株式会社デンソー | モールドパッケージの製造方法 |
JP2008187045A (ja) | 2007-01-30 | 2008-08-14 | Matsushita Electric Ind Co Ltd | 半導体装置用リードフレームとその製造方法、半導体装置 |
JP5470680B2 (ja) * | 2007-02-06 | 2014-04-16 | 日亜化学工業株式会社 | 発光装置及びその製造方法並びに成形体 |
JP2008189827A (ja) * | 2007-02-06 | 2008-08-21 | Shin Etsu Chem Co Ltd | 熱硬化性エポキシ樹脂組成物及び半導体装置 |
US20080255283A1 (en) * | 2007-02-06 | 2008-10-16 | Takayuki Aoki | Thermosetting epoxy resin composition and semiconductor device |
JP5608955B2 (ja) | 2007-02-06 | 2014-10-22 | 日亜化学工業株式会社 | 発光装置及びその製造方法並びに発光装置用成形体 |
JP4205135B2 (ja) | 2007-03-13 | 2009-01-07 | シャープ株式会社 | 半導体発光装置、半導体発光装置用多連リードフレーム |
JP2008262939A (ja) * | 2007-04-10 | 2008-10-30 | Matsushita Electric Ind Co Ltd | リードフレームおよび封止金型および封止方法 |
TW200843130A (en) * | 2007-04-17 | 2008-11-01 | Wen Lin | Package structure of a surface-mount high-power light emitting diode chip and method of making the same |
JP2007329502A (ja) | 2007-08-16 | 2007-12-20 | Toshiba Corp | 発光装置 |
JP4522442B2 (ja) * | 2007-08-20 | 2010-08-11 | 三菱鉛筆株式会社 | 衝撃緩和装置付きノック式筆記具 |
US7968899B2 (en) * | 2007-08-27 | 2011-06-28 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | LED light source having improved resistance to thermal cycling |
US8716848B2 (en) | 2008-03-24 | 2014-05-06 | SemiLEDs Optoelectronics Co., Ltd. | LED device with conductive wings and tabs |
JP3142406U (ja) * | 2008-03-31 | 2008-06-12 | サンケン電気株式会社 | 半導体発光装置及び半導体発光ユニット |
KR100869376B1 (ko) | 2008-05-20 | 2008-11-19 | 주식회사 정진넥스텍 | 발광다이오드 칩 실장용 리드 프레임 어셈블리와 그의 제조방법 |
JP2010021259A (ja) | 2008-07-09 | 2010-01-28 | Toshiba Corp | 光半導体装置 |
JP5217800B2 (ja) | 2008-09-03 | 2013-06-19 | 日亜化学工業株式会社 | 発光装置、樹脂パッケージ、樹脂成形体並びにこれらの製造方法 |
US8829685B2 (en) * | 2009-03-31 | 2014-09-09 | Semiconductor Components Industries, Llc | Circuit device having funnel shaped lead and method for manufacturing the same |
EP2421060A1 (en) * | 2009-04-13 | 2012-02-22 | Panasonic Electric Works Co., Ltd. | Light-emitting diode |
JP5383611B2 (ja) * | 2010-01-29 | 2014-01-08 | 株式会社東芝 | Ledパッケージ |
JP5527450B2 (ja) | 2013-03-06 | 2014-06-18 | 日亜化学工業株式会社 | 発光装置、樹脂パッケージ、樹脂成形体並びにこれらの製造方法 |
JP2013145908A (ja) | 2013-03-06 | 2013-07-25 | Nichia Chem Ind Ltd | 発光装置、樹脂パッケージ、樹脂成形体並びにこれらの製造方法 |
-
2008
- 2008-09-03 JP JP2008225408A patent/JP5217800B2/ja active Active
-
2009
- 2009-08-24 TW TW107119884A patent/TWI726214B/zh active
- 2009-08-24 TW TW098128401A patent/TWI525848B/zh active
- 2009-08-24 TW TW109108764A patent/TWI725777B/zh active
- 2009-08-24 TW TW106112359A patent/TWI635629B/zh active
- 2009-08-24 TW TW104140582A patent/TWI596806B/zh active
- 2009-08-24 TW TW110111023A patent/TWI850544B/zh active
- 2009-08-27 EP EP19189739.6A patent/EP3598509B1/en active Active
- 2009-08-27 KR KR1020207018684A patent/KR102171595B1/ko active IP Right Grant
- 2009-08-27 KR KR1020207030577A patent/KR102294486B1/ko active IP Right Grant
- 2009-08-27 CN CN201610048316.7A patent/CN105576091B/zh active Active
- 2009-08-27 KR KR1020217026637A patent/KR102405355B1/ko active IP Right Grant
- 2009-08-27 KR KR1020237009267A patent/KR102677856B1/ko active IP Right Grant
- 2009-08-27 EP EP09811246.9A patent/EP2325901B1/en active Active
- 2009-08-27 EP EP24184101.4A patent/EP4427906A2/en active Pending
- 2009-08-27 KR KR1020167009743A patent/KR101763086B1/ko active IP Right Grant
- 2009-08-27 CN CN200980134526.6A patent/CN102144306B/zh active Active
- 2009-08-27 KR KR1020187029629A patent/KR102011235B1/ko active IP Right Grant
- 2009-08-27 CN CN201610048719.1A patent/CN105576109B/zh active Active
- 2009-08-27 KR KR1020177008341A patent/KR101909896B1/ko active IP Right Grant
- 2009-08-27 CN CN201610048537.4A patent/CN105563728B/zh active Active
- 2009-08-27 DE DE202009019173.7U patent/DE202009019173U1/de not_active Expired - Lifetime
- 2009-08-27 US US12/737,940 patent/US8530250B2/en active Active
- 2009-08-27 KR KR1020227018361A patent/KR102512557B1/ko active IP Right Grant
- 2009-08-27 EP EP17182766.0A patent/EP3267494B1/en active Active
- 2009-08-27 KR KR1020117007597A patent/KR101614975B1/ko active IP Right Grant
- 2009-08-27 KR KR1020197023217A patent/KR102129936B1/ko active IP Right Grant
- 2009-08-27 BR BRPI0918071-0A patent/BRPI0918071B1/pt active IP Right Grant
- 2009-08-27 WO PCT/JP2009/004170 patent/WO2010026716A1/ja active Application Filing
-
2013
- 2013-08-16 US US13/969,182 patent/US9287476B2/en active Active
-
2015
- 2015-10-30 US US14/928,570 patent/US9490411B2/en active Active
- 2015-10-30 US US14/928,550 patent/US9537071B2/en active Active
-
2016
- 2016-11-23 US US15/360,316 patent/US10115870B2/en active Active
-
2018
- 2018-06-13 US US16/007,954 patent/US10573788B2/en active Active
- 2018-10-02 US US16/150,255 patent/US10573789B2/en active Active
- 2018-10-02 US US16/150,259 patent/US10700241B2/en active Active
-
2020
- 2020-05-26 US US16/883,714 patent/US11094854B2/en active Active
-
2021
- 2021-07-09 US US17/371,943 patent/US20210336094A1/en active Pending
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
BRPI0918071A2 (pt) | dispositivo de emissão de luz. acondicionamento de resina, corpo moldado em resina, e métodos para fabricar o dispositivo de emissão de luz, o acondicionamento de resina e o corpo moldado em resina | |
BRPI0911051A2 (pt) | composição de resina termoplástica. | |
BRPI0909788A2 (pt) | método para fabricar um dispositivo emissor de luz, e, dispositivo emissor de luz. | |
NL1032195A1 (nl) | Artikeltransportinrichting. | |
NL1032232A1 (nl) | Artikeltransportinrichting. | |
BRPI0918757A2 (pt) | resina de poliamida | |
EP2204074A4 (en) | NANO-POWERED GATE VOLTAGE-CONTROLLED LUMINAIRE DIODES | |
BRPI0813806A2 (pt) | Dispositivo operado por pedal. | |
EP2249408A4 (en) | LIGHT-EMITTING DIODE AND METHOD FOR THE PRODUCTION THEREOF AND LIGHT-EMITTING DEVICE AND METHOD FOR THE PRODUCTION OF THE LIGHT-EMITTING DEVICE | |
SE0801651L (sv) | Granuleringskvarn | |
DE602006021578D1 (de) | Kunstharzflaschenkörper | |
NL2000997A1 (nl) | Artikeltransportmiddel. | |
EP2091118A4 (en) | OPTICAL SEMICONDUCTOR, SEMICONDUCTOR LASER WITH OPTICAL SEMICONDUCTOR DEVICE AND OPTICAL TRANSPONDER WITH SEMICONDUCTOR LASER | |
BRPI0909489A2 (pt) | recipientes moldados por injeção | |
BRPI0820794A2 (pt) | Composição, resina e têxtil de resina | |
DE502006000065D1 (de) | Anleger mit Sicherheitseinrichtung | |
BRPI0911955A2 (pt) | composto, e, dispositivo orgânico de emissão de luz | |
FR2936592B1 (fr) | Dispositif eclairant ameliore. | |
DE112006001460A5 (de) | Ventilvorrichtung mit Sicherheitsmechanismus | |
NO20054036D0 (no) | Mateanordning. | |
NL1032019A1 (nl) | Kunststof pot. | |
ES1061986Y (es) | Bolsa de plastico. | |
FI20065102A (fi) | Laukaisumekanismi | |
ES1061131Y (es) | Dispositivo de seguridad autocentrante para dumpers. | |
ITGE20050063A1 (it) | Dispositivo di sicurezza per altalene |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
B15K | Others concerning applications: alteration of classification |
Free format text: A CLASSIFICACAO ANTERIOR ERA: H01L 33/00 Ipc: B29C 45/14 (1985.01), H01L 23/00 (1974.07), H01L 3 |
|
B06F | Objections, documents and/or translations needed after an examination request according [chapter 6.6 patent gazette] | ||
B06T | Formal requirements before examination [chapter 6.20 patent gazette] | ||
B06A | Patent application procedure suspended [chapter 6.1 patent gazette] | ||
B09A | Decision: intention to grant [chapter 9.1 patent gazette] | ||
B16A | Patent or certificate of addition of invention granted [chapter 16.1 patent gazette] |
Free format text: PRAZO DE VALIDADE: 10 (DEZ) ANOS CONTADOS A PARTIR DE 18/02/2020, OBSERVADAS AS CONDICOES LEGAIS. |