JP4651008B2 - 発光ダイオード - Google Patents
発光ダイオード Download PDFInfo
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- JP4651008B2 JP4651008B2 JP2005025682A JP2005025682A JP4651008B2 JP 4651008 B2 JP4651008 B2 JP 4651008B2 JP 2005025682 A JP2005025682 A JP 2005025682A JP 2005025682 A JP2005025682 A JP 2005025682A JP 4651008 B2 JP4651008 B2 JP 4651008B2
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- coil spring
- light emitting
- emitting diode
- substrate
- white light
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
前記蛍光材は、発光ダイオード素子20からの発光エネルギによって励起され短波長の可視光を長波長の可視光に変換するものであり、例えばイットリウム化合物等の蛍光物質が用いられる。
本発明の目的は上記従来技術における課題を解決して発光ダイオードが携帯電話等の補助光源として搭載される場合に、筐体デザイン(特に厚み)に柔軟に対応し、簡単な構成により、容易に且つ低コストで実装できる発光ダイオードを提供することにある。また、実装工程において、高温のリフロー工程を無くすことで、透光性封止樹脂と基板との界面剥離を防止し、信頼性や、長期安定性を向上させた発光ダイオードを提供することにある。
前記基板の一対の端子電極のそれぞれの近傍に設ける貫通穴と、前記枠体の前記貫通穴に対応する位置に設ける凹部と、該凹部と前記基板との間に配置され圧縮保持されている導電性の第1のコイルバネと、前記第1のコイルバネの内側及び前記貫通穴に挿通配置される導電性の第2のコイルバネとを有し、前記第1のコイルバネと前記第2のコイルバネとは別体に形成され、前記第1のコイルバネはその一端が前記枠体の凹部の底部に当接され、他端が前記基板の端子電極と当接し電気的に接続され、前記第2のコイルバネは渦巻き状に形成された一端が前記第1のコイルバネの渦巻き状に形成された一端に当接され、前記第2のコイルバネと前記第1のコイルバネとが電気的に接続されると共に、前記第2のコイルバネの他端が前記貫通穴の外側に突出して配置されていることを特徴とする。
また、導電性弾性部材における径大部と径小部とを別体とし、それぞれ独立した部材とすることによって、発光ダイオードを組立後に径小部を基板の貫通穴から挿入することができ、搭載される筐体デザイン(特に厚み)に合わせてその長さを自由に設定することができる。
次に反射枠25を基板22に押圧する。この時、基板22と反射枠25とが、互いに当接する部分で接着材39によって接着され固定される。これによって、図15に示すように、第1のコイルバネ65が圧縮され、その他端65bが基板22の端子電極であるカソード電極23に当接し、押圧され機械的接触により電気的に接続される。
12 ガラエポ基板
13 カソード電極
14 アノード電極
15 マザーボード
16 17 プリント配線
18 半田
19 透光性封止樹脂
20 発光ダイオード素子
21 蛍光材含有層
22 基板
23 カソード電極
24 アノード電極
25 反射枠
26 透光性封止樹脂
27、28 ボンディングワイヤ
30 白色発光ダイオード
31、32 反射枠の凹部
33、34 基板の貫通穴
35、36 第1のコイルバネ
37、38 第2のコイルバネ
39 接着剤
40 ストロボ部
41 下側筐体
42 マザーボード
43、44 プリント配線
45 上側筐体
46 補助カバー
51、52、71、72 導電性弾性部材
55、56、65、66 第1のコイルバネ
57、58、67、68 第2のコイルバネ
Claims (6)
- 一対の端子電極を有する基板と、該基板上に実装された発光ダイオード素子と、該発光ダイオード素子を被覆する透光性封止樹脂と、前記基板上に形成された枠体とを有し、マザーボードに実装される発光ダイオードにおいて、
前記基板の一対の端子電極のそれぞれの近傍に設ける貫通穴と、前記枠体の前記貫通穴に対応する位置に設ける凹部と、該凹部と前記基板との間に配置され圧縮保持されている導電性の第1のコイルバネと、前記第1のコイルバネの内側及び前記貫通穴に挿通配置される導電性の第2のコイルバネとを有し、前記第1のコイルバネと前記第2のコイルバネとは別体に形成され、前記第1のコイルバネはその一端が前記枠体の凹部の底部に当接され、他端が前記基板の端子電極と当接し電気的に接続され、前記第2のコイルバネは渦巻き状に形成された一端が前記第1のコイルバネの渦巻き状に形成された一端に当接され、前記第2のコイルバネと前記第1のコイルバネとが電気的に接続されると共に、前記第2のコイルバネの他端が前記貫通穴の外側に突出して配置されていることを特徴とする発光ダイオード。 - 前記第2のコイルバネの弾性を利用して前記第2のコイルバネの他端を前記マザーボード上のプリント配線に押圧することによって、前記第2のコイルバネの他端と前記マザーボード上のプリント配線とが電気的に接続されると共に、所定の筐体に保持、固定されてなることを特徴とする請求項1に記載の発光ダイオード。
- 前記第1のコイルバネの外径は、前記基板に設ける貫通穴の内径より大きく、前記枠体に設ける凹部の内径より小さい値に設定されていることを特徴とする請求項1または請求項2に記載の発光ダイオード。
- 前記基板に設ける貫通穴の内径は、前記枠体に設ける凹部の内径と比較して小さい値に設定されていることを特徴とする請求項1から請求項3のいずれか1項に記載の発光ダイオード。
- 前記枠体と前記基板とは接着剤または接着シートで固定されていることを特徴とする請求項1から請求項4のいずれか1項に記載の発光ダイオード。
- 前記枠体が前記発光ダイオード素子から発光された光を反射する反射枠であることを特徴とする請求項1から請求項5のいずれか1項に記載の発光ダイオード。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005025682A JP4651008B2 (ja) | 2005-02-01 | 2005-02-01 | 発光ダイオード |
CNB2006100937024A CN100536181C (zh) | 2005-02-01 | 2006-01-27 | 发光二极管 |
DE102006004406.1A DE102006004406B4 (de) | 2005-02-01 | 2006-01-31 | Leuchtdiode mit elektrisch leitenden elastischen Elementen und zugehöriges Gerät |
US11/344,603 US7345322B2 (en) | 2005-02-01 | 2006-02-01 | Light emitting diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005025682A JP4651008B2 (ja) | 2005-02-01 | 2005-02-01 | 発光ダイオード |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006216623A JP2006216623A (ja) | 2006-08-17 |
JP4651008B2 true JP4651008B2 (ja) | 2011-03-16 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2005025682A Expired - Fee Related JP4651008B2 (ja) | 2005-02-01 | 2005-02-01 | 発光ダイオード |
Country Status (4)
Country | Link |
---|---|
US (1) | US7345322B2 (ja) |
JP (1) | JP4651008B2 (ja) |
CN (1) | CN100536181C (ja) |
DE (1) | DE102006004406B4 (ja) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4674487B2 (ja) * | 2005-04-25 | 2011-04-20 | パナソニック電工株式会社 | 表面実装型発光装置 |
US8044412B2 (en) | 2006-01-20 | 2011-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd | Package for a light emitting element |
KR100782798B1 (ko) * | 2006-02-22 | 2007-12-05 | 삼성전기주식회사 | 기판 패키지 및 그 제조 방법 |
DE102006015335B4 (de) * | 2006-04-03 | 2013-05-02 | Ivoclar Vivadent Ag | Halbleiter-Strahlungsquelle sowie Lichthärtgerät |
JP4798000B2 (ja) * | 2007-01-15 | 2011-10-19 | パナソニック電工株式会社 | Ledパッケージ |
CN101573555B (zh) * | 2007-03-08 | 2012-08-22 | 夏普株式会社 | Led背光源和液晶显示装置 |
TWM328763U (en) * | 2007-05-21 | 2008-03-11 | Univ Nat Taiwan | Structure of heat dissipation substrate |
CN101413652B (zh) * | 2007-10-16 | 2010-11-10 | 富士迈半导体精密工业(上海)有限公司 | 发光二极管光源装置 |
KR101104034B1 (ko) | 2007-12-06 | 2012-01-09 | 엘지이노텍 주식회사 | 발광다이오드, 발광장치 및 그 제조방법 |
US8304660B2 (en) * | 2008-02-07 | 2012-11-06 | National Taiwan University | Fully reflective and highly thermoconductive electronic module and method of manufacturing the same |
DE102008013028A1 (de) * | 2008-03-07 | 2009-09-10 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauteil, Gerät zur Aufzeichnung von Bildinformation und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils |
JP5217800B2 (ja) * | 2008-09-03 | 2013-06-19 | 日亜化学工業株式会社 | 発光装置、樹脂パッケージ、樹脂成形体並びにこれらの製造方法 |
JP2010177404A (ja) * | 2009-01-29 | 2010-08-12 | Shihen Tech Corp | 発光装置用の冷却構造 |
JP5268032B2 (ja) * | 2009-07-22 | 2013-08-21 | カシオ計算機株式会社 | ユニット装置 |
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CN104332445A (zh) * | 2013-07-22 | 2015-02-04 | 西安永电电气有限责任公司 | Igbt模块封装结构的固定装置 |
DE102015109333A1 (de) | 2015-06-11 | 2016-12-15 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
US10257932B2 (en) | 2016-02-16 | 2019-04-09 | Microsoft Technology Licensing, Llc. | Laser diode chip on printed circuit board |
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- 2006-01-31 DE DE102006004406.1A patent/DE102006004406B4/de not_active Expired - Fee Related
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US7345322B2 (en) | 2008-03-18 |
JP2006216623A (ja) | 2006-08-17 |
DE102006004406A1 (de) | 2006-09-07 |
CN1866565A (zh) | 2006-11-22 |
DE102006004406B4 (de) | 2014-09-11 |
US20060169991A1 (en) | 2006-08-03 |
CN100536181C (zh) | 2009-09-02 |
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