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49th ESSDERC 2019: Cracow, Poland
- 49th European Solid-State Device Research Conference, ESSDERC 2019, Cracow, Poland, September 23-26, 2019. IEEE 2019, ISBN 978-1-7281-1539-9
- Edoardo Charbon:
Cryo-CMOS Electronics for Quantum Computing Applications. 1-6 - Franck Arnaud, Sébastien Haendler, Sylvain Clerc, Rossella Ranica, Anna Gandolfo, Olivier Weber:
28nm FDSOI Platform with Embedded PCM for IoT, ULP, Digital, Analog, Automotive and others Applications. 7-10 - Jeffrey Abbott, Tianyang Ye, Hongkun Park, Donhee Ham
:
CMOS interface with biological molecules and cells : Invited review paper. 13-16 - Michael Heuken:
GaN based HEMT technology for Power and RF applications. 17-20 - Jong-Ho Lee, Yoohyun Noh, Hyeongsu Kim, Jangsaeng Kim, Jong-Ho Bae, Sung Yun Woo, Sungtae Lee, Suhwan Lim, Won-Mook Kang, Young-Tak Seo
Review of candidate devices for neuromorphic applications. 22-27 - Klaus Pressel, Andreas Grassmann, Markus Fink, Guenter Tutsch:
I. Double-Sided Cooling Technology for Emobility. 28-30 - Daniel Baierhofer:
Current SiC Power Device Development, Material Defect Measurements and Characterization at Bosch. 31-34 - Michele Calabretta
Power Packages Interconnections for High Reliability Automotive Applications. 35-39 - Dominik Scholz, Stefan Groetsch, Michael Wittmann, Alexander Pfeuffer, Martin Strassburg, Andreas Ploessl:
Pixelated Light: Merging microelectronics and photonics. 40-43 - Stefan Majoni:
Bosch MEMS Foundry Service. 44-46 - Gabriel Kittler:
Micro-Transfer-Printing - A unique technology for heterogeneous integration of (opto-) electronic components. 47-49 - Giovanni Paternoster
Silicon Photomultipliers Technology at Fondazione Bruno Kessler and 3D Integration Perspectives. 50-53 - Dominique Thomas, Jean Michailos, Krysten Rochereau:
Challenges and capabilities of 3D integration in CMOS imaging sensors. 54-56 - Thomas Scherübl, Yael Sufrin, Avi Cohen, Ofir Sharoni, Rolf Seltmann:
Excursion prevention and increasing device performance using mask correction for intrafield CD and Overlay improvement. 57-60 - Heiko Feldmann, Paul Gräupner, Peter Kürz, Winfried Kaiser:
High-NA EUV Optics - The key for miniaturization of integrated circuits in the next decade. 61-63 - Walter Schwarzenbach, L. Loubriat, Vincent Joseph, Laurent Viravaux, Olivier Moreau, Sebastien Lasserre, Bich-Yen Nguyen:
22FD-SOI Variability Improvement Thanks to SmartCut Thickness Control at Atomic Scale. 64-65 - Sebastian Höppner, Jörg Schreiter, Robert Niebsch, Stephan Scherzer, Ulrich Hensel, Jörg Winkler, Mario Orgis, Holger Eisenreich, Dennis Walter, Uwe Steeb, André Scharfe, Clifford Dmello, Robert Sinkwitz, Heiner Bauer, Alexander Oefelein, Florian Schraut
How to Achieve World-Leading Energy Efficiency using 22FDX with Adaptive Body Biasing on an Arm Cortex-M4 IoT SoC. 66-69 - Maciej Wiatr, Sabine Kolodinski:
22FDX™ Technology and Add-on-Functionalities. 70-73 - Sabine Kolodinski, Boli Peng, Ciro Esposito, Yves Zimmermann, Michael Schröter, Xin Xu, Paolo Valerio Testa, Corrado Carta
IPCEI subcontracts contributing to 22-FDX Add-On Functionalities at GF. 74-77 - Aditi Agarwal, Kijeong Han, B. Jayant Baliga:
Impact of Channel Length on Characteristics of 600V 4H-SiC Inversion-channel Planar MOSFETs. 78-81 - Davide Cornigli, Andrea Natale Tallarico
Characterization and Modeling of BTI in SiC MOSFETs. 82-85 - Federico Giuliano, Riccardo Depetro, Giuseppe Croce, Andrea Natale Tallarico
TCAD predictions of hot-electron injection in p-type LDMOS transistors. 86-89 - Pavlo Sai
Electrical and Noise Characteristics of Fin-Shaped GaN/AlGaN Devices for High Frequency Operation. 90-93 - Arnout Beckers
Cryogenic MOSFET Threshold Voltage Model. 94-97 - Pascal Alexander 't Hart, Masoud Babaie, Edoardo Charbon, Andrei Vladimirescu, Fabio Sebastiano:
Subthreshold Mismatch in Nanometer CMOS at Cryogenic Temperatures. 98-101 - Oleg V. Dvornikov, Nikolay N. Prokopenko
Test Chip for Identifying Spice-Parameters of Cryogenic BiFET Circuits. 102-105 - Maneesha Rupakula, Junrui Zhang, Francesco Bellando, Fabien Wildhaber, Clarissa Convertino, Heinz Schmid, Kirsten E. Moselund
Monolithically integrated catalyst-free High Aspect Ratio InAs-On-Insulator (InAsOI) FinFETs for pH sensing. 106-109 - Sungju Choi, Jungmok Kim, Jinsu Yoon, Inseok Chae, Sung-Jin Choi, Dong Myong Kim
The Module of Gain-controllable Amplifier Readout Circuits based on Si Nanowire ISFET for Biochips for Optimization of Dynamic Range, Linearity, and Resolution. 110-113 - Eva Bestelink
49dB depletion-load amplifiers with polysilicon source-gated transistors. 114-117 - Evelyn T. Breyer
Ultra-dense co-integration of FeFETs and CMOS logic enabling very-fine grained Logic-in-Memory. 118-121 - Gerardo Malavena
Impact of Program Accuracy and Random Telegraph Noise on the Performance of a NOR Flash-based Neuromorphic Classifier. 122-125 - Nicola Polino, Mario Laudato, Elia Ambrosi, Alessandro Bricalli, Daniele Ielmini:
Joule Heating in SiOx RRAM Device Studied by an Integrated Micro-Thermal Stage. 126-129 - Francesco Maria Puglisi
SIMPLY: Design of a RRAM-Based Smart Logic-in-Memory Architecture using RRAM Compact Model. 130-133 - Jens Trommer
Eliminating Charge Sharing in Clocked Logic Gates on the Device Level Employing Transistors with Multiple Independent Inputs. 134-137 - Melkamu Belete
Large Scale MoS2/Si Photodiodes with Graphene Transparent Electrodes. 138-141 - Ryosho Nakane
Si-based Spin Metal-Oxide-Semiconductor Field-Effect Transistors with an Inversion Channel. 142-145 - Roberto Lacerda de Orio
Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM. 146-149 - Chhandak Mukherjee, Patrick Mounaix, Cristell Maneux, Michele Natrella, James Seddon
First Uni-Traveling Carrier Photodiode Compact Model Enabling Future Terahertz Communication System Design. 150-153 - Marine Couret
Impact of SiGe HBT hot-carrier degradation on the broadband amplifier output supply current. 154-157 - Shuzhen You, Xiangdong Li, Stefaan Decoutere, Guido Groeseneken
Monolithically integrated GaN power ICs designed using the MIT virtual source GaNFET (MVSG) compact model for enhancement-mode p-GaN gate power HEMTs, logic transistors and resistors. 158-161 - Lucas Nyssens, Arka Halder
Self-Heating in 28 FDSOI UTBB MOSFETs at Cryogenic Temperatures. 162-165 - Zhixing Zhao, Patrick James Artz, Klaus Hempel, Juergen Faul, Tianbing Chen, Richard Taylor, Jerome Mazurier, Carsten Grass, Jan Hoentschel, David Harame, Steffen Lehmann, Luca Lucci, Yogadissen Andee, Alexis Divay, Luca Pirro, Tom Herrmann, Alban Zaka, Ricardo Sousa
22FDX® fMAX Optimization through Parasitics Reduction and GM Boost. 166-169 - Shon Yadav, Wai Heng Chow, Abdellatif Bellaouar, Jen Shuang Wong, Tianbing Chen, Satoshi Sekine, Christoph Schwan, Mei See Chin, Glenn Workman, Kok Wai J. Chew:
Demonstration and Modelling of Excellent RF Switch Performance of 22nm FD-SOI Technology for Millimeter-Wave Applications. 170-173 - Valerio Milo
Low-energy inference machine with multilevel HfO2 RRAM arrays. 174-177 - Koki Kamimura, Susumu Nohmi, Kenta Suzuki, Ken Takeuchi:
Parallel Product-Sum Operation Neuromorphic Systems with 4-bit Ferroelectric FET Synapses. 178-181 - Andrei Vladimirescu:
The Synergy SPICE - Compact Models. 182-185 - André Lange, Fabio A. Velarde Gonzalez, Insaf Lahbib, Sonja Crocoll:
Comparison of modeling approaches for transistor degradation: model card adaptations vs subcircuits. 186-189 - Wladek Grabinski
FOSS EKV2.6 Verilog-A Compact MOSFET Model. 190-193 - Renan Trevisoli
Compact Analytical Model for Trap-Related Low Frequency Noise in Junctionless Transistors. 194-197 - Nikolaos Makris
Compact Modeling of Low Frequency Noise and Thermal Noise in Junction Field Effect Transistors. 198-201 - Atieh Farokhnejad
Evaluation of Static/Transient Performance of TFET Inverter Regarding Device Parameters Using a Compact Model. 202-205 - Nandish Mehta
Design and Characterization of Monolithic Microring Resonator based Photodetector in 45nm SOI CMOS. 206-209 - Tulio Chaves de Albuquerque, Dylan Issartel, Raphael Clerc, Patrick Pittet
Body-biasing considerations with SPAD FDSOI: advantages and drawbacks. 210-213 - Tsuyoshi Takahashi, Kenichi Kawaguchi, Masaru Sato, Michihiko Suhara, Naoya Okamoto
Highly Sensitive p-GaAsSb/n-InAs Nanowire Backward Diodes for Low-Power Microwaves. 214-217 - Quang Huy Le
DC-110 GHz Characterization of 22FDX® FDSOI Transistors for 5G Transmitter Front-End. 218-221 - Aurelio Mannara, Alessandro S. Spinelli, Andrea L. Lacaita
Current Transport in Polysilicon-channel GAA MOSFETs: A Modeling Perspective. 222-225 - Patrick Scharf, Christoph Sohrmann, Steffen Holland, Volkhard Beyer:
Investigations on current filamentation in PIN diodes using TLP measurements and TCAD simulations. 226-229 - Federico Pace, Olivier Marcelot, Philippe Martin-Gonthier, Olivier Saint-Pé, Michel Breart de Boisanger, Rose-Marie Sauvage, Pierre Magnan:
A Fast Method for Modeling and Optimizing Parasitic Light Sensitivity in Global Shutter CMOS Image Sensors. 230-233 - Andrea Vici, Felice Russo, Nicola Lovisi, Aldo Marchioni, Antonio Casella, Fernanda Irrera:
Generation of oxide traps in Back-Side-Illuminated CMOS Image Sensors and impact on reliability. 234-237 - Carlos Marquez
Temperature and Gate Leakage Influence on the Z2-FET Memory Operation. 238-241 - Tihomir Knezevic
Back-end-of-line CMOS-compatible diode fabrication with pure boron deposition down to 50 °C. 242-245 - Luigi Di Benedetto
A Novel 4H-SiC UV Photo-transistor based on a Shallow Mesa Structure. 246-249 - Ion Vornicu
Low-Noise and High-Efficiency Near-IR SPADs in 110nm CIS Technology. 250-253 - Andreas Mai
Photonic thermal sensor integration towards electronic-photonic-IC technologies. 254-257 - Gergo P. Szakmany, Gary H. Bernstein, Alexei O. Orlov, Wolfgang Porod:
Suspended Antenna-Coupled Nanothermocouple Array for Long-Wave Infrared Detection. 258-261 - Alexander Makarov, Dimitri Linten, Stanislav Tyaginov, Ben Kaczer, Philippe Roussel, Adrian Vaisman Chasin, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed
Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants. 262-265 - Stefania Carapezzi
On the electron mobility of strained InGaAs channel MOSFETs. 266-269 - Florian Ludwig
Circuit-Based Hydrodynamic Modeling of AlGaN/GaN HEMTs. 270-273
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