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Wolfgang Gös

Wolfgang Goes

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This is just a disambiguation page, and is not intended to be the bibliography of an actual person. Any publication listed on this page has not been assigned to an actual author yet. If you know the true author of one of the publications listed below, you are welcome to contact us.

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2020 – today

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2024
[c16]
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Mario Bendra, Bernhard Pruckner, R. L. de Orio, Siegfried Selberherr, Wolfgang Goes, Viktor Sverdlov:
Advancing Nonvolatile Memory Technologies: Enhancing Reliability and Performance through Double Spin Torque Magnetic Tunnel Junctions and Interlayer Exchange Coupling. DRC 2024: 1-2
[c15]
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Mario Bendra, R. L. de Orio, Siegfried Selberherr, Wolfgang Goes, Viktor Sverdlov:
Influence of Interface Exchange Coupling in Multilayered Spintronic Structures. MIPRO 2024: 1579-1583
[c14]
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Bernhard Pruckner, Nils Petter Jørstad, T. Hadámek, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov:
Field-Free Perpendicular Magnetization Switching of SOT-MRAM Devices by Magnetic Spin Hall Effect. MIPRO 2024: 1584-1589
2023
[c13]
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Viktor Sverdlov, Mario Bendra, Bernhard Pruckner, Simone Fiorentini, Wolfgang Goes, Siegfried Selberherr:
Comprehensive Modeling of Advanced Composite Magnetoresistive Devices. ESSDERC 2023: 93-96
[c12]
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Johannes Ender, Roberto Lacerda de Orio, Wolfgang Gös, Viktor Sverdlov:
Towards Efficient SOT-Assisted STT-MRAM Cell Switching Using Reinforcement Learning. LSSC 2023: 83-90
[c11]
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Mario Bendra, Simone Fiorentini, Johannes Ender, R. L. de Orio, T. Hadámek, Nils Petter Jørstad, Bernhard Pruckner, Siegfried Selberherr, Wolfgang Goes, Viktor Sverdlov:
Back-Hopping in Ultra-Scaled MRAM Cells. MIPRO 2023: 159-162
2022
[c10]
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Simone Fiorentini, Mario Bendra, Johannes Ender, Roberto Lacerda de Orio, Wolfgang Goes, Siegfried Selberherr, Viktor Sverdlov:
Spin Torques in ULTRA-Scaled MRAM Devices. ESSDERC 2022: 348-351
[c9]
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Mario Bendra, Simone Fiorentini, Johannes Ender, R. L. de Orio, T. Hadámek, W. J. Loch, Nils Petter Jørstad, Siegfried Selberherr, Wolfgang Goes, Viktor Sverdlov:
Spin Transfer Torques in Ultra-Scaled MRAM Cells. MIPRO 2022: 129-132
2021
[c8]
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Wolfgang Goes, D. Green, Philippe Blaise, Giuseppe Piccolboni, Alessandro Bricalli, Amir Regev, Gabriel Molas, Jean-Francois Nodin:
A Comprehensive Oxide-Based ReRAM TCAD Model with Experimental Verification. IMW 2021: 1-4
[c7]
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Mario Bendra, Johannes Ender, Simone Fiorentini, T. Hadámek, Roberto Lacerda de Orio, Wolfgang Goes, Viktor Sverdlov, Siegfried Selberherr:
Finite Element Method Approach to MRAM Modeling. MIPRO 2021: 70-73
2020
[c6]
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Anastasiia Kruv, Ben Kaczer, Alexander Grill, Mario Gonzalez, Jacopo Franco, Dimitri Linten, Wolfgang Goes, Tibor Grasser, Ingrid De Wolf:
On the impact of mechanical stress on gate oxide trapping. IRPS 2020: 1-5

2010 – 2019

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2019
[c5]
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Roberto Lacerda de Orio, Alexander Makarov, Siegfried Selberherr, Wolfgang Goes, Johannes Ender, Simone Fiorentini, Viktor Sverdlov:
Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM. ESSDERC 2019: 146-149
2018
[j4]
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Wolfgang Goes, Yannick Wimmer, Al-Moatasem El-Sayed, Gerhard Rzepa, Markus Jech, Alexander L. Shluger, Tibor Grasser:
Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence. Microelectron. Reliab. 87: 286-320 (2018)
2015
[c4]
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Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Erik Bury, Moonju Cho, Robin Degraeve, Dimitri Linten, Guido Groeseneken, Halil Kukner, Praveen Raghavan, Francky Catthoor, Gerhard Rzepa, Wolfgang Gös, Tibor Grasser:
The defect-centric perspective of device and circuit reliability - From individual defects to circuits. ESSDERC 2015: 218-225
[c3]
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Tibor Grasser, M. Wahl, Wolfgang Goes, Yannick Wimmer, Al-Moatasem El-Sayed, Alexander L. Shluger, Ben Kaczer:
On the volatility of oxide defects: Activation, deactivation, and transformation. IRPS 2015: 5
[c2]
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  - conf/iscas/RzepaGKG15
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Gerhard Rzepa, Wolfgang Goes, Ben Kaczer, Tibor Grasser:
Characterization and modeling of reliability issues in nanoscale devices. ISCAS 2015: 2445-2448
2014
[c1]
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Tibor Grasser, Gerhard Rzepa, Michael Waltl, Wolfgang Goes, Karina Rott, Gunnar Andreas Rott, Hans Reisinger, Jacopo Franco, Ben Kaczer:
Characterization and modeling of charge trapping: From single defects to devices. ICICDT 2014: 1-4

2000 – 2009

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2009
[j3]
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Stanislav Tyaginov, Viktor Sverdlov, Ivan A. Starkov, Wolfgang Gös, Tibor Grasser:
Impact of O-Si-O bond angle fluctuations on the Si-O bond-breakage rate. Microelectron. Reliab. 49(9-11): 998-1002 (2009)
2008
[j2]
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Enzo Ungersboeck, Wolfgang Gös, Siddhartha Dhar, Hans Kosina, Siegfried Selberherr:
The effect of uniaxial stress on band structure and electron mobility of silicon. Math. Comput. Simul. 79(4): 1071-1077 (2008)
2007
[j1]
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Markus Karner, Andreas Gehring, M. Wagner, Robert Entner, Stefan Holzer, Wolfgang Goes, M. Vasicek, Tibor Grasser, Hans Kosina, Siegfried Selberherr:
VSP - A gate stack analyzer. Microelectron. Reliab. 47(4-5): 704-708 (2007)

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