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Matthias Bucher
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2010 – 2019
- 2019
- [c20]Wladek Grabinski
, Ahmed Abo-Elhadid, Marek Mierzwinski, Laurent Lemaitre, Mike Brinson, Christophe Lallement
FOSS EKV2.6 Verilog-A Compact MOSFET Model. ESSDERC 2019: 190-193 - [c19]Nikolaos Makris
Compact Modeling of Low Frequency Noise and Thermal Noise in Junction Field Effect Transistors. ESSDERC 2019: 198-201 - [c18]Michael Jaritz, Cornelius Jaeger, Matthias Bucher, Jasmin Smajic, Djordje Vukovic, Sebastian Blume:
An Improved Model for Circulating Bearing Currents in Inverter-Fed AC Machines. ICIT 2019: 225-230 - [c17]Aristeidis Nikolaou, Loukas Chevas, Alexia Papadopoulou
Forward and Reverse Operation of Enclosed-Gate MOSFETs and Sensitivity to High Total Ionizing Dose. MIXDES 2019: 306-309 - [c16]Alexia Papadopoulou
Design of Micropower Operational Transconductance Amplifiers for High Total Ionizing Dose Effects. MOCAST 2019: 1-4 - 2018
- [c15]Nikolaos Makris
A Compact Model for Static and Dynamic Operation of Symmetric Double-Gate Junction FETs. ESSDERC 2018: 238-241 - [c14]Loukas Chevas, Aristeidis Nikolaou, Matthias Bucher
Investigation of Scaling and Temperature Effects in Total Ionizing Dose (TID) Experiments in 65 nm CMOS. MIXDES 2018: 313-318 - [c13]Aristeidis Nikolaou, Matthias Bucher
Extending a 65nm CMOS process design kit for high total ionizing dose effects. MOCAST 2018: 1-4 - 2017
- [j3]Angelos Papadimitriou, Matthias Bucher
Multi-objective Low-Noise Amplifier Optimization Using Analytical Model and Genetic Computation. Circuits Syst. Signal Process. 36(12): 4963-4993 (2017) - [c12]Angelos Papadimitriou, Matthias Bucher
Optimization of RF low noise amplifier design using analytical model and genetic computation. MIXDES 2017: 302-307 - 2016
- [j2]Rupendra Kumar Sharma
A comprehensive analysis of nanoscale single- and multi-gate MOSFETs. Microelectron. J. 52: 66-72 (2016) - [c11]Nikolaos Mavredakis, Matthias Bucher
Compact model for variability of low frequency noise due to number fluctuation effect. ESSDERC 2016: 464-467 - [c10]Michael Tschampion, Matthias A. Bucher, Andreas Ulbig
N-1 security assessment incorporating the flexibility offered by dynamic line rating. PSCC 2016: 1-7 - 2015
- [c9]Wladek Grabinski
FOSS EKV 2.6 parameter extractor. MIXDES 2015: 181-186 - 2014
- [i1]Matthias Bucher, Spyros Chatzivasileiadis, Göran Andersson:
Managing Flexibility in Multi-Area Power Systems. CoRR abs/1409.2234 (2014) - 2013
- [j1]Maria-Anna Chalkiadaki, Cédric Valla, Frédéric Poullet, Matthias Bucher
Why- and how- to integrate Verilog-A compact models in SPICE simulators. Int. J. Circuit Theory Appl. 41(11): 1203-1211 (2013) - 2012
- [c8]Athanasios Dimakos, Matthias Bucher
Ultra-low voltage drain-bulk connected MOS transistors in weak and moderate inversion. ICECS 2012: 17-20
2000 – 2009
- 2007
- [c7]Matthias Bucher
Determining MOSFET Parameters in Moderate Inversion. DDECS 2007: 349-352 - 2006
- [c6]Nikolaos Mavredakis, Matthias Bucher
Inversion-Coefficient Based Design of RF CMOS Low-Noise Amplifiers. ICECS 2006: 74-77 - 2004
- [c5]Matthias Bucher, Antonios Bazigos, Nikolaos Nastos, Yannis Papananos, François Krummenacher, Sadayuki Yoshitomi:
Analysis of harmonic distortion in deep submicron CMOS. ICECS 2004: 395-398 - 2002
- [c4]Daniel Foty, Matthias Bucher
Re-interpreting the MOS transistor via the inversion coefficient and the continuum of gms/Id. ICECS 2002: 1179-1182 - [c3]Matthias Bucher
Analysis of transconductances at all levels of inversion in deep submicron CMOS. ICECS 2002: 1183-1186 - 2000
- [c2]David M. Binkley, Matthias Bucher
Design-oriented characterization of CMOS over the continuum of inversion level and channel length. ICECS 2000: 161-164
1990 – 1999
- 1995
- [c1]Gerson A. S. Machado, Christian C. Enz, Matthias Bucher:
Estimating Key Parameters in the EKV MOST Model for Analogue Desgin and Simulation. ISCAS 1995: 1588-1591
Coauthor Index
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