WO2011052572A1 - Élément de conversion photoélectrique organique - Google Patents
Élément de conversion photoélectrique organique Download PDFInfo
- Publication number
- WO2011052572A1 WO2011052572A1 PCT/JP2010/068946 JP2010068946W WO2011052572A1 WO 2011052572 A1 WO2011052572 A1 WO 2011052572A1 JP 2010068946 W JP2010068946 W JP 2010068946W WO 2011052572 A1 WO2011052572 A1 WO 2011052572A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- electrode
- photoelectric conversion
- conversion element
- organic photoelectric
- Prior art date
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 119
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 31
- 239000001301 oxygen Substances 0.000 claims abstract description 31
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000004065 semiconductor Substances 0.000 claims description 39
- 150000004703 alkoxides Chemical class 0.000 claims description 21
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 claims description 11
- 239000003960 organic solvent Substances 0.000 claims description 8
- WOZZOSDBXABUFO-UHFFFAOYSA-N tri(butan-2-yloxy)alumane Chemical compound [Al+3].CCC(C)[O-].CCC(C)[O-].CCC(C)[O-] WOZZOSDBXABUFO-UHFFFAOYSA-N 0.000 claims description 5
- 238000005247 gettering Methods 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 200
- 239000002346 layers by function Substances 0.000 description 57
- 238000000034 method Methods 0.000 description 46
- 239000000463 material Substances 0.000 description 43
- 239000000758 substrate Substances 0.000 description 41
- 239000011241 protective layer Substances 0.000 description 34
- 239000007788 liquid Substances 0.000 description 27
- 239000000203 mixture Substances 0.000 description 27
- 239000003795 chemical substances by application Substances 0.000 description 24
- 239000003566 sealing material Substances 0.000 description 23
- 239000000243 solution Substances 0.000 description 22
- 239000002904 solvent Substances 0.000 description 22
- 238000000576 coating method Methods 0.000 description 20
- 239000010408 film Substances 0.000 description 20
- -1 polysiloxane Polymers 0.000 description 20
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 14
- 238000004519 manufacturing process Methods 0.000 description 12
- 125000004432 carbon atom Chemical group C* 0.000 description 11
- 125000000623 heterocyclic group Chemical group 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- RFFLAFLAYFXFSW-UHFFFAOYSA-N 1,2-dichlorobenzene Chemical compound ClC1=CC=CC=C1Cl RFFLAFLAYFXFSW-UHFFFAOYSA-N 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 8
- 230000006866 deterioration Effects 0.000 description 8
- 229910003472 fullerene Inorganic materials 0.000 description 8
- 239000011368 organic material Substances 0.000 description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 7
- 239000000654 additive Substances 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000000996 additive effect Effects 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 5
- 238000007639 printing Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229940126062 Compound A Drugs 0.000 description 4
- NLDMNSXOCDLTTB-UHFFFAOYSA-N Heterophylliin A Natural products O1C2COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC2C(OC(=O)C=2C=C(O)C(O)=C(O)C=2)C(O)C1OC(=O)C1=CC(O)=C(O)C(O)=C1 NLDMNSXOCDLTTB-UHFFFAOYSA-N 0.000 description 4
- UUIQMZJEGPQKFD-UHFFFAOYSA-N Methyl butyrate Chemical compound CCCC(=O)OC UUIQMZJEGPQKFD-UHFFFAOYSA-N 0.000 description 4
- 125000003277 amino group Chemical group 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 230000001771 impaired effect Effects 0.000 description 4
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 238000009210 therapy by ultrasound Methods 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 125000002252 acyl group Chemical group 0.000 description 3
- 125000004423 acyloxy group Chemical group 0.000 description 3
- 125000003545 alkoxy group Chemical group 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- 125000004414 alkyl thio group Chemical group 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 125000004659 aryl alkyl thio group Chemical group 0.000 description 3
- 125000002102 aryl alkyloxo group Chemical group 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- 125000005110 aryl thio group Chemical group 0.000 description 3
- 125000004104 aryloxy group Chemical group 0.000 description 3
- 229920001940 conductive polymer Polymers 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 description 3
- 229920000767 polyaniline Polymers 0.000 description 3
- 229920000123 polythiophene Polymers 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000004408 titanium dioxide Substances 0.000 description 3
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- AZSFNTBGCTUQFX-UHFFFAOYSA-N C12=C3C(C4=C5C=6C7=C8C9=C(C%10=6)C6=C%11C=%12C%13=C%14C%11=C9C9=C8C8=C%11C%15=C%16C=%17C(C=%18C%19=C4C7=C8C%15=%18)=C4C7=C8C%15=C%18C%20=C(C=%178)C%16=C8C%11=C9C%14=C8C%20=C%13C%18=C8C9=%12)=C%19C4=C2C7=C2C%15=C8C=4C2=C1C12C3=C5C%10=C3C6=C9C=4C32C1(CCCC(=O)OC)C1=CC=CC=C1 Chemical compound C12=C3C(C4=C5C=6C7=C8C9=C(C%10=6)C6=C%11C=%12C%13=C%14C%11=C9C9=C8C8=C%11C%15=C%16C=%17C(C=%18C%19=C4C7=C8C%15=%18)=C4C7=C8C%15=C%18C%20=C(C=%178)C%16=C8C%11=C9C%14=C8C%20=C%13C%18=C8C9=%12)=C%19C4=C2C7=C2C%15=C8C=4C2=C1C12C3=C5C%10=C3C6=C9C=4C32C1(CCCC(=O)OC)C1=CC=CC=C1 AZSFNTBGCTUQFX-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229920000219 Ethylene vinyl alcohol Polymers 0.000 description 2
- 229910000846 In alloy Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- WQDUMFSSJAZKTM-UHFFFAOYSA-N Sodium methoxide Chemical compound [Na+].[O-]C WQDUMFSSJAZKTM-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Thiophene Chemical compound C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 2
- 125000002723 alicyclic group Chemical group 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 125000003368 amide group Chemical group 0.000 description 2
- 150000004982 aromatic amines Chemical class 0.000 description 2
- 125000005018 aryl alkenyl group Chemical group 0.000 description 2
- 125000003710 aryl alkyl group Chemical group 0.000 description 2
- 125000005015 aryl alkynyl group Chemical group 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- OCKPCBLVNKHBMX-UHFFFAOYSA-N butylbenzene Chemical compound CCCCC1=CC=CC=C1 OCKPCBLVNKHBMX-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 125000004093 cyano group Chemical group *C#N 0.000 description 2
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000002274 desiccant Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000007756 gravure coating Methods 0.000 description 2
- 238000007646 gravure printing Methods 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 230000005525 hole transport Effects 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 125000005462 imide group Chemical group 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 125000001820 oxy group Chemical group [*:1]O[*:2] 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 2
- 229920000548 poly(silane) polymer Polymers 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920006254 polymer film Polymers 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- LPNYRYFBWFDTMA-UHFFFAOYSA-N potassium tert-butoxide Chemical compound [K+].CC(C)(C)[O-] LPNYRYFBWFDTMA-UHFFFAOYSA-N 0.000 description 2
- 150000003219 pyrazolines Chemical class 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 125000004469 siloxy group Chemical group [SiH3]O* 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical class C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 2
- 239000000725 suspension Substances 0.000 description 2
- YTZKOQUCBOVLHL-UHFFFAOYSA-N tert-butylbenzene Chemical compound CC(C)(C)C1=CC=CC=C1 YTZKOQUCBOVLHL-UHFFFAOYSA-N 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 125000004149 thio group Chemical group *S* 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical compound CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 description 1
- RELMFMZEBKVZJC-UHFFFAOYSA-N 1,2,3-trichlorobenzene Chemical compound ClC1=CC=CC(Cl)=C1Cl RELMFMZEBKVZJC-UHFFFAOYSA-N 0.000 description 1
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 1
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 description 1
- MPPPKRYCTPRNTB-UHFFFAOYSA-N 1-bromobutane Chemical compound CCCCBr MPPPKRYCTPRNTB-UHFFFAOYSA-N 0.000 description 1
- MNDIARAMWBIKFW-UHFFFAOYSA-N 1-bromohexane Chemical compound CCCCCCBr MNDIARAMWBIKFW-UHFFFAOYSA-N 0.000 description 1
- YZWKKMVJZFACSU-UHFFFAOYSA-N 1-bromopentane Chemical compound CCCCCBr YZWKKMVJZFACSU-UHFFFAOYSA-N 0.000 description 1
- VFWCMGCRMGJXDK-UHFFFAOYSA-N 1-chlorobutane Chemical compound CCCCCl VFWCMGCRMGJXDK-UHFFFAOYSA-N 0.000 description 1
- MLRVZFYXUZQSRU-UHFFFAOYSA-N 1-chlorohexane Chemical compound CCCCCCCl MLRVZFYXUZQSRU-UHFFFAOYSA-N 0.000 description 1
- SQCZQTSHSZLZIQ-UHFFFAOYSA-N 1-chloropentane Chemical compound CCCCCCl SQCZQTSHSZLZIQ-UHFFFAOYSA-N 0.000 description 1
- XNCMQRWVMWLODV-UHFFFAOYSA-N 1-phenylbenzimidazole Chemical compound C1=NC2=CC=CC=C2N1C1=CC=CC=C1 XNCMQRWVMWLODV-UHFFFAOYSA-N 0.000 description 1
- YMMGRPLNZPTZBS-UHFFFAOYSA-N 2,3-dihydrothieno[2,3-b][1,4]dioxine Chemical compound O1CCOC2=C1C=CS2 YMMGRPLNZPTZBS-UHFFFAOYSA-N 0.000 description 1
- VFBJMPNFKOMEEW-UHFFFAOYSA-N 2,3-diphenylbut-2-enedinitrile Chemical group C=1C=CC=CC=1C(C#N)=C(C#N)C1=CC=CC=C1 VFBJMPNFKOMEEW-UHFFFAOYSA-N 0.000 description 1
- HONWGFNQCPRRFM-UHFFFAOYSA-N 2-n-(3-methylphenyl)-1-n,1-n,2-n-triphenylbenzene-1,2-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C(=CC=CC=2)N(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 HONWGFNQCPRRFM-UHFFFAOYSA-N 0.000 description 1
- CAAMSDWKXXPUJR-UHFFFAOYSA-N 3,5-dihydro-4H-imidazol-4-one Chemical compound O=C1CNC=N1 CAAMSDWKXXPUJR-UHFFFAOYSA-N 0.000 description 1
- ONKCIMOQGCARHN-UHFFFAOYSA-N 3-methyl-n-[4-[4-(3-methylanilino)phenyl]phenyl]aniline Chemical compound CC1=CC=CC(NC=2C=CC(=CC=2)C=2C=CC(NC=3C=C(C)C=CC=3)=CC=2)=C1 ONKCIMOQGCARHN-UHFFFAOYSA-N 0.000 description 1
- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 description 1
- CMSGUKVDXXTJDQ-UHFFFAOYSA-N 4-(2-naphthalen-1-ylethylamino)-4-oxobutanoic acid Chemical compound C1=CC=C2C(CCNC(=O)CCC(=O)O)=CC=CC2=C1 CMSGUKVDXXTJDQ-UHFFFAOYSA-N 0.000 description 1
- DDTHMESPCBONDT-UHFFFAOYSA-N 4-(4-oxocyclohexa-2,5-dien-1-ylidene)cyclohexa-2,5-dien-1-one Chemical class C1=CC(=O)C=CC1=C1C=CC(=O)C=C1 DDTHMESPCBONDT-UHFFFAOYSA-N 0.000 description 1
- DIVZFUBWFAOMCW-UHFFFAOYSA-N 4-n-(3-methylphenyl)-1-n,1-n-bis[4-(n-(3-methylphenyl)anilino)phenyl]-4-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 DIVZFUBWFAOMCW-UHFFFAOYSA-N 0.000 description 1
- 239000005725 8-Hydroxyquinoline Chemical class 0.000 description 1
- 229920003319 Araldite® Polymers 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 101000651021 Homo sapiens Splicing factor, arginine/serine-rich 19 Proteins 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- WRYCSMQKUKOKBP-UHFFFAOYSA-N Imidazolidine Chemical compound C1CNCN1 WRYCSMQKUKOKBP-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- 229930192627 Naphthoquinone Natural products 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 229920000292 Polyquinoline Polymers 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 102100027779 Splicing factor, arginine/serine-rich 19 Human genes 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- DHXVGJBLRPWPCS-UHFFFAOYSA-N Tetrahydropyran Chemical compound C1CCOCC1 DHXVGJBLRPWPCS-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- ULGYAEQHFNJYML-UHFFFAOYSA-N [AlH3].[Ca] Chemical compound [AlH3].[Ca] ULGYAEQHFNJYML-UHFFFAOYSA-N 0.000 description 1
- JFBZPFYRPYOZCQ-UHFFFAOYSA-N [Li].[Al] Chemical compound [Li].[Al] JFBZPFYRPYOZCQ-UHFFFAOYSA-N 0.000 description 1
- JHYLKGDXMUDNEO-UHFFFAOYSA-N [Mg].[In] Chemical compound [Mg].[In] JHYLKGDXMUDNEO-UHFFFAOYSA-N 0.000 description 1
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910001508 alkali metal halide Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910001615 alkaline earth metal halide Inorganic materials 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical class [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 description 1
- XEPMXWGXLQIFJN-UHFFFAOYSA-K aluminum;2-carboxyquinolin-8-olate Chemical compound [Al+3].C1=C(C([O-])=O)N=C2C(O)=CC=CC2=C1.C1=C(C([O-])=O)N=C2C(O)=CC=CC2=C1.C1=C(C([O-])=O)N=C2C(O)=CC=CC2=C1 XEPMXWGXLQIFJN-UHFFFAOYSA-K 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- AQNQQHJNRPDOQV-UHFFFAOYSA-N bromocyclohexane Chemical compound BrC1CCCCC1 AQNQQHJNRPDOQV-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- WVIIMZNLDWSIRH-UHFFFAOYSA-N cyclohexylcyclohexane Chemical group C1CCCCC1C1CCCCC1 WVIIMZNLDWSIRH-UHFFFAOYSA-N 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 229940117389 dichlorobenzene Drugs 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 125000005678 ethenylene group Chemical group [H]C([*:1])=C([H])[*:2] 0.000 description 1
- 239000004210 ether based solvent Substances 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 150000008376 fluorenones Chemical class 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- LHJOPRPDWDXEIY-UHFFFAOYSA-N indium lithium Chemical compound [Li].[In] LHJOPRPDWDXEIY-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- YZASAXHKAQYPEH-UHFFFAOYSA-N indium silver Chemical compound [Ag].[In] YZASAXHKAQYPEH-UHFFFAOYSA-N 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000002687 intercalation Effects 0.000 description 1
- 238000009830 intercalation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- GCICAPWZNUIIDV-UHFFFAOYSA-N lithium magnesium Chemical compound [Li].[Mg] GCICAPWZNUIIDV-UHFFFAOYSA-N 0.000 description 1
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000004702 methyl esters Chemical class 0.000 description 1
- UNFUYWDGSFDHCW-UHFFFAOYSA-N monochlorocyclohexane Chemical compound ClC1CCCCC1 UNFUYWDGSFDHCW-UHFFFAOYSA-N 0.000 description 1
- DCZNSJVFOQPSRV-UHFFFAOYSA-N n,n-diphenyl-4-[4-(n-phenylanilino)phenyl]aniline Chemical class C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 DCZNSJVFOQPSRV-UHFFFAOYSA-N 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- GIFAOSNIDJTPNL-UHFFFAOYSA-N n-phenyl-n-(2-phenylphenyl)naphthalen-1-amine Chemical group C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=CC=C1C1=CC=CC=C1 GIFAOSNIDJTPNL-UHFFFAOYSA-N 0.000 description 1
- LKKPNUDVOYAOBB-UHFFFAOYSA-N naphthalocyanine Chemical class N1C(N=C2C3=CC4=CC=CC=C4C=C3C(N=C3C4=CC5=CC=CC=C5C=C4C(=N4)N3)=N2)=C(C=C2C(C=CC=C2)=C2)C2=C1N=C1C2=CC3=CC=CC=C3C=C2C4=N1 LKKPNUDVOYAOBB-UHFFFAOYSA-N 0.000 description 1
- 150000002791 naphthoquinones Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical compound C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- 150000002987 phenanthrenes Chemical class 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical class N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 150000004033 porphyrin derivatives Chemical class 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical class C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- ZJMWRROPUADPEA-UHFFFAOYSA-N sec-butylbenzene Chemical compound CCC(C)C1=CC=CC=C1 ZJMWRROPUADPEA-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- QDRKDTQENPPHOJ-UHFFFAOYSA-N sodium ethoxide Chemical compound [Na+].CC[O-] QDRKDTQENPPHOJ-UHFFFAOYSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 125000001544 thienyl group Chemical group 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/88—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/115—Polyfluorene; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/151—Copolymers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Definitions
- the present invention relates to an organic photoelectric conversion element.
- the photoelectric conversion element is an element that can convert light energy into electric energy, and a solar cell is an example.
- a silicon solar cell is known as a typical solar cell.
- the manufacturing cost is high. For this reason, the organic solar cell whose manufacturing cost is cheap compared with a silicon-type solar cell attracts attention.
- Patent Document 1 describes a configuration in which a getter agent made of a desiccant is provided in an organic photoelectric conversion element.
- the organic photoelectric conversion element is provided with a getter agent made of a desiccant, the water in the organic photoelectric conversion element can be adsorbed by the getter agent, so that deterioration of the organic material in the organic photoelectric conversion element due to water is suppressed.
- the life of the organic photoelectric conversion element can be extended.
- the technique described in Patent Document 1 does not provide a long lifetime, and a technique for further extending the lifetime of the organic photoelectric conversion element has been desired.
- the present invention has been made in view of the above problems, and provides a long-life organic photoelectric conversion element.
- the present inventor has found that one of the major causes of the deterioration of the organic photoelectric conversion element is the deterioration of the electrode, and that oxygen and water are in direct contact with the electrode. It has been found that the electrode can be effectively prevented from being deteriorated by providing a getter layer capable of adsorbing and thus the present invention has been completed.
- An organic photoelectric conversion element comprising a first electrode, a second electrode, an active layer, and a getter layer
- the active layer is a layer that is provided between the first electrode and the second electrode, and is capable of generating an electric charge upon incidence of light
- the getter layer is an organic photoelectric conversion element which is in contact with the surface of the second electrode opposite to the first electrode and can adsorb oxygen and water.
- the organic photoelectric conversion element according to [1] wherein the active layer includes a p-type semiconductor and an n-type semiconductor.
- FIG. 1 is a schematic cross-sectional view of an organic photoelectric conversion element according to an embodiment of the present invention.
- the organic photoelectric conversion element of the present invention includes a first electrode, a second electrode, an active layer, and a getter layer.
- the active layer is a layer that is provided between the first electrode and the second electrode and can generate an electric charge upon incidence of light.
- the getter layer is in contact with the surface of the second electrode opposite to the first electrode, and is a layer that can adsorb oxygen and water. Therefore, the arrangement order of the layers is the order of the first electrode, the active layer, the second electrode, and the getter layer.
- the getter layer adsorbs oxygen and water that have passed through the substrate, protective layer, sealing material layer, etc. and entered the organic photoelectric conversion element, or is organic in the active layer or the like constituting the organic photoelectric conversion element.
- the organic photoelectric conversion element of the present invention Since residual oxygen and residual moisture mixed in the manufacturing process of the photoelectric conversion element can be adsorbed, it is possible to prevent the material in the organic photoelectric conversion element from being deteriorated by oxygen and water. Furthermore, in the organic photoelectric conversion element of the present invention, since the getter layer is provided in contact with the second electrode, the distance from the first electrode and the second electrode to the getter layer is very short. Therefore, it is possible to effectively prevent electrode deterioration (particularly oxidation), which is a major cause of deterioration of the organic photoelectric conversion element. Oxidation of the electrode is often the biggest cause of deterioration of the organic photoelectric conversion element. However, the organic photoelectric conversion element of the present invention can effectively prevent oxidation of the electrode, so that the life can be extended more than before. It has become.
- the organic photoelectric conversion element of this invention may be provided with layers other than a 1st electrode, an active layer, a 2nd electrode, and a getter layer.
- the organic photoelectric conversion element of this invention is equipped with the protective layer which covers the surface of an organic photoelectric conversion element.
- the organic photoelectric conversion element of the present invention may include a functional layer between the first electrode and the active layer, and may include a functional layer between the active layer and the second electrode. Also good.
- the organic photoelectric conversion element of the present invention usually comprises a substrate, and each layer constituting the organic photoelectric conversion element of the present invention on the substrate (for example, a first electrode, an active layer, a second electrode, a getter layer, a protective layer) A layer and a functional layer).
- substrate is a member which functions as a support body of the organic photoelectric conversion element of this invention.
- the substrate a member that does not change chemically is usually used when an electrode is formed or an organic material layer is formed.
- the material for the substrate include glass, plastic, polymer film, and silicon.
- substrate may be used individually by 1 type, and may be used combining two or more types by arbitrary ratios.
- a transparent or translucent member is used as the substrate, but an opaque substrate can also be used.
- the electrode opposite to the substrate that is, the electrode farther from the opaque substrate among the first electrode and the second electrode
- First electrode and second electrode One of the first electrode and the second electrode is an anode, and the other is a cathode. In order for light to easily enter the active layer located between the first electrode and the second electrode, at least one of the first electrode and the second electrode is preferably transparent or translucent.
- Examples of the transparent or translucent electrode include a conductive metal oxide film and a translucent metal thin film.
- Examples of the material of the transparent or translucent electrode include indium oxide, zinc oxide, tin oxide, and indium tin oxide (ITO), indium zinc oxide (IZO), NESA which are composites thereof. Examples thereof include a film manufactured using a conductive material such as gold, platinum, silver, and copper. Of these, ITO, indium / zinc / oxide, and tin oxide are preferable. It is also possible to use an organic material as the material of the transparent or translucent electrode. Examples of organic materials that can be used as an electrode material include conductive polymers such as polyaniline and derivatives thereof, polythiophene and derivatives thereof.
- Examples of the material for the opaque electrode include metals and conductive polymers. Specific examples include lithium, sodium, potassium, rubidium, cesium, magnesium, calcium, strontium, barium, aluminum, scandium, vanadium, zinc, yttrium, indium, cerium, samarium, europium, terbium, ytterbium, and the like, Of the metals, two or more kinds of alloys, one or more kinds of the metals, and one or more kinds of metals selected from the group consisting of gold, silver, platinum, copper, manganese, titanium, cobalt, nickel, tungsten, and tin Examples include alloys, graphite, graphite intercalation compounds, polyaniline and its derivatives, polythiophene and its derivatives.
- the alloy examples include magnesium-silver alloy, magnesium-indium alloy, magnesium-aluminum alloy, indium-silver alloy, lithium-aluminum alloy, lithium-magnesium alloy, lithium-indium alloy, calcium-aluminum alloy, etc. Is mentioned.
- the material of an electrode may be used individually by 1 type, and may be used combining two or more types by arbitrary ratios.
- the thicknesses of the first electrode and the second electrode are different depending on the type of electrode material, but are preferably 500 nm or less from the viewpoint of improving the light transmittance and reducing the electric resistance. Preferably it is 200 nm or less. In addition, although there is no restriction
- Examples of the method for forming the first electrode and the second electrode include a vacuum deposition method, a sputtering method, an ion plating method, a plating method, and the like. Further, when the first electrode and the second electrode are formed of, for example, a conductive polymer, they may be formed by a coating method.
- the active layer is a layer that can generate an electric charge upon incidence of light, and usually includes a p-type semiconductor that is an electron-donating compound and an n-type semiconductor that is an electron-accepting compound.
- the organic photoelectric conversion element of the present invention is referred to as an “organic” photoelectric conversion element because an organic compound is used as at least one of the p-type semiconductor and the n-type semiconductor, usually both. Note that the p-type semiconductor and the n-type semiconductor are relatively determined from the energy level of the energy level of the semiconductor.
- charges are generated in the active layer in the following manner.
- light energy incident on the active layer is absorbed by one or both of the n-type semiconductor and the p-type semiconductor, excitons in which electrons and holes are combined are generated.
- the generated excitons move and reach the heterojunction interface where the n-type semiconductor and the p-type semiconductor are adjacent, the respective HOMO (highest occupied orbit) energy and LUMO (lowest empty orbit) at the heterojunction interface.
- Electrons and holes are separated due to the difference in energy, and charges (electrons and holes) that can move independently are generated.
- the generated charges can be taken out as electric energy (current) to the outside of the organic photoelectric conversion element of the present invention by moving to the respective electrodes.
- the active layer may be a single-layered layer composed of only one layer or a layered structure including two or more layers.
- Examples of the layer structure of the active layer include the following examples. However, the layer configuration of the active layer is not limited to the following examples.
- Examples of p-type semiconductors include pyrazoline derivatives, arylamine derivatives, stilbene derivatives, triphenyldiamine derivatives, oligothiophene and derivatives thereof, polyvinylcarbazole and derivatives thereof, polysilane and derivatives thereof, and aromatic amines in side chains or main chains. And polysiloxane derivatives, polyaniline and derivatives thereof, polythiophene and derivatives thereof, polypyrrole and derivatives thereof, polyphenylene vinylene and derivatives thereof, and polythienylene vinylene and derivatives thereof.
- suitable p-type semiconductors include organic polymer compounds having a structural unit represented by the following structural formula (1).
- organic polymer compound a copolymer of a compound having a structural unit represented by the structural formula (1) and a compound represented by the following structural formula (2) is more preferable.
- Ar 1 and Ar 2 are the same or different and each represents a trivalent heterocyclic group.
- R 3 , R 4 , R 5 , R 6 , R 7 and R 8 are the same or different and are a hydrogen atom, a halogen atom, an alkyl group, an alkyloxy group, an alkylthio group, an aryl group, an aryloxy group, an arylthio group, Arylalkyl group, arylalkyloxy group, arylalkylthio group, acyl group, acyloxy group, amide group, acid imide group, amino group, substituted amino group, substituted silyl group, substituted silyloxy group, substituted silylthio group, substituted silylamino group, 1
- a valent heterocyclic group, heterocyclic oxy group, heterocyclic thio group, arylalkenyl group, arylalkynyl group, carboxyl group or cyano group is represented.
- R 50 is a hydrogen atom, halogen atom, alkyl group, alkyloxy group, alkylthio group, aryl group, aryloxy group, arylthio group, arylalkyl group, arylalkyloxy group, arylalkylthio group, acyl group, acyloxy group, amide Group, acid imide group, amino group, substituted amino group, substituted silyl group, substituted silyloxy group, substituted silylthio group, substituted silylamino group, monovalent heterocyclic group, heterocyclic oxy group, heterocyclic thio group, arylalkenyl group, An arylalkynyl group, a carboxyl group or a cyano group is represented.
- R 51 is an alkyl group having 6 or more carbon atoms, an alkyloxy group having 6 or more carbon atoms, an alkylthio group having 6 or more carbon atoms, an aryl group having 6 or more carbon atoms, an aryloxy group having 6 or more carbon atoms, or 6 or more carbon atoms.
- one type of p-type semiconductor may be used, or two or more types may be used in combination at any ratio.
- n-type semiconductor examples include oxadiazole derivatives, anthraquinodimethane and its derivatives, benzoquinone and its derivatives, naphthoquinone and its derivatives, anthraquinone and its derivatives, tetracyanoanthraquinodimethane and its derivatives, fluorenone derivatives, diphenyl dicyanoethylene and derivatives thereof, diphenoquinone derivatives, 8-hydroxyquinoline and metal complexes of derivatives thereof, polyquinoline and derivatives thereof, polyquinoxaline and derivatives thereof, polyfluorene and derivatives thereof, fullerenes and derivatives thereof such as C 60, such as bathocuproine
- fullerene examples include derivatives such as C 60 , C 70 , C 76 , C 78, and C 84 .
- specific examples of the fullerene derivative include compounds having the following structures.
- examples of another fullerene derivative [6,6] phenyl -C 61 butyric acid methyl ester C60PCBM, [6,6] -Phenyl C 61 butyric acid methyl ester), [6,6] phenyl -C 71 Butyric acid methyl ester (C70PCBM, [6,6] -Phenyl C 71 butyric acid methyl ester), [6,6] Phenyl-C 85 butyric acid methyl ester (C84PCBM, [6,6] -Phenyl C 85 butyric acid methyl ester) , and the like [6,6] thienyl -C 61 butyric acid methyl ester ([6,6] -Thienyl C 61 butyric acid methyl ester).
- one type of n-type semiconductor may be used, or two or more types may be used in combination at any ratio.
- the amount ratio of the p-type semiconductor and the n-type semiconductor in the active layer is arbitrary as long as the effect of the present invention is not impaired.
- the amount of the n-type semiconductor with respect to 100 parts by weight of the p-type semiconductor is preferably 10 parts by weight or more. More preferably, it is 20 parts by weight or more, preferably 1000 parts by weight or less, more preferably 500 parts by weight or less.
- the thickness of the active layer is usually 1 nm or more, preferably 2 nm or more, more preferably 5 nm or more, particularly preferably 20 nm or more, and usually 100 ⁇ m or less, preferably 1000 nm or less, more preferably 500 nm or less, particularly preferably 200 nm or less. is there.
- the formation method of the active layer there is no limitation on the formation method of the active layer, and for example, a film deposition method from a liquid composition containing a material of the active layer (for example, one or both of a p-type semiconductor and an n-type semiconductor), a physical vapor deposition method such as a vacuum deposition method Examples thereof include a film formation method by a vapor deposition method such as (PVD method) and chemical vapor deposition (CVD method). Among these, a film forming method from a liquid composition is preferable because formation is easy and cost can be reduced.
- solvents include toluene, xylene, mesitylene, tetralin, decalin, bicyclohexyl, unsaturated hydrocarbon solvents such as n-butylbenzene, sec-butylbenzene, tert-butylbenzene, carbon tetrachloride, chloroform, dichloromethane , Halogenated saturated hydrocarbon solvents such as dichloroethane, chlorobutane, bromobutane, chloropentane, bromopentane, chlorohexane, bromohexane, chlorocyclohexane, bromocyclohexane, and halogenated unsaturated hydrocarbons such as chlorobenzene, dichlorobenzene, and trichlorobenzene
- the solvent include ether solvents such as tetrahydrofuran and tetrahydropyran.
- a solvent may be used individually by 1 type and may be
- the concentration of each of the p-type semiconductor and the n-type semiconductor in the liquid composition is usually 0.1% by weight or more based on the solvent.
- liquid composition film forming method examples include spin coating, casting, micro gravure coating, gravure coating, bar coating, roll coating, wire bar coating, dip coating, spray coating, and screen.
- printing method examples include gravure printing method, flexographic printing method, offset printing method, inkjet printing method, dispenser printing method, nozzle coating method, capillary coating method and the like. Of these, spin coating, flexographic printing, gravure printing, ink jet printing, and dispenser printing are preferred.
- an active layer is obtained by performing a process such as removing the solvent from the formed film by drying as necessary.
- the respective layers constituting the active layer may be sequentially laminated by, for example, the method described above.
- the getter layer is a layer that can adsorb oxygen and water.
- the getter layer adsorbs oxygen and water to reduce the amount of oxygen and water present in the organic photoelectric conversion element of the present invention, and the materials in the organic photoelectric conversion element of the present invention are deteriorated by oxygen and water. Can be prevented.
- the getter layer is in contact with at least a part, preferably the whole, of the surface of the second electrode opposite to the first electrode. Therefore, since the getter layer is close to the electrode, it is possible to effectively prevent the oxidation of the electrode. Particularly, since the getter layer is in contact with the second electrode, the oxidation of the second electrode can be strongly prevented.
- Oxidation of the electrode is considered to be one of the main causes of deterioration of the organic photoelectric conversion element. Therefore, by effectively preventing the oxidation of the electrode, the organic photoelectric conversion element of the present invention has a longer photoelectric conversion efficiency than before. It becomes a long-life organic photoelectric conversion element capable of maintaining the above.
- the getter layer includes a getter agent that is a material capable of adsorbing oxygen and water.
- the getter agent include alkoxides such as aluminum-S-butoxide, sodium methoxide, sodium ethoxide, potassium t-butoxide, potassium t-butoxide, and the like.
- the alkoxide is capable of forming a getter layer by a coating method, has high affinity with the second electrode, can effectively prevent oxidation of the second electrode, and has high stability of the getter agent itself. Is preferred.
- alkoxides selected from the group consisting of aluminum-s-butoxide and titanium isopropoxide are particularly preferable because they are particularly excellent in water absorption.
- a getter agent may be used individually by 1 type, and may be used combining two or more types by arbitrary ratios.
- the getter layer may contain other components in addition to the getter agent as long as the effects of the present invention are not significantly impaired.
- maintaining a getter agent will be mentioned.
- the binder include a resin, and specific examples thereof include polyethylene trifluoride, poly (trifluoroethylene chloride) (PCTFE), polyimide, polycarbonate, polyethylene terephthalate, alicyclic polyolefin, and ethylene-vinyl alcohol copolymer. Etc.
- additives such as a filler and antioxidant, are also mentioned, for example.
- the other component may be used individually by 1 type, and may be used combining two or more types by arbitrary ratios.
- the proportion of the getter agent in the getter layer is preferably 80% by volume or more and 100% by volume or less, more preferably 90% by volume or more and 100% by volume or less, particularly preferably from the viewpoint of effectively adsorbing oxygen and water. It is 95 volume% or more and 100 volume% or less.
- the thickness of the getter layer is usually 5 ⁇ m or more, preferably 10 ⁇ m or more, more preferably 100 ⁇ m or more, and usually 500 ⁇ m or less, preferably 300 ⁇ m or less. If the getter layer is too thin, oxygen and water may not be sufficiently adsorbed, and if it is too thick, the organic photoelectric conversion element may be excessively thick.
- the getter layer can be formed by any method depending on the type of getter agent.
- the getter layer material (getter agent or the like) is formed by a vapor deposition method such as a physical vapor deposition method (PVD method) such as a sputtering method or a vacuum vapor deposition method and a chemical vapor deposition method (CVD method). do it.
- the getter layer is preferably formed by a coating method.
- a coating method is suitable when an alkoxide is used as a getter agent.
- a method for forming a getter layer by a coating method when an alkoxide is used as a getter agent will be described.
- the getter layer is preferably formed through a step of preparing a getter layer forming solution containing an alkoxide and an organic solvent and applying the getter layer forming solution.
- Examples of the organic solvent contained in the solution for forming the getter layer include the same solvents as those contained in the liquid composition for forming the active layer.
- an organic solvent may be used individually by 1 type, and may be used combining two or more types by arbitrary ratios.
- the getter layer contains a component other than the alkoxide, the component is usually included in the solution for forming the getter layer.
- the amount of the organic solvent in the solution for forming the getter layer is usually 1000 parts by weight or more, preferably 5000 parts by weight or more, more preferably 10,000 parts by weight or more, and usually 20000 parts by weight with respect to 100 parts by weight of the alkoxide as the getter agent. It is 1 part by weight or less, preferably 15000 parts by weight or less, more preferably 12000 parts by weight or less.
- the solution After preparing a solution for forming a getter layer, the solution is applied to a predetermined position where a getter layer is to be formed.
- a solution for forming a getter layer is usually applied on the second electrode.
- Examples of the application method of the solution for forming the getter layer include the same application method as the application method of the liquid composition for forming the active layer.
- a film containing an alkoxide as a getter agent is formed by applying a solution for forming a getter layer. Therefore, after application of the solution for forming the getter layer, a getter layer containing an alkoxide can be obtained by performing a process such as drying the formed film and removing the organic solvent, if necessary.
- the organic photoelectric conversion element of the present invention usually includes a protective layer.
- a protective layer is a layer which protects the organic photoelectric conversion element of this invention from oxygen, water, etc., for example, hits a layer called a gas barrier layer, a gas barrier property film, etc.
- a protective layer is provided so as to cover the first electrode, the second electrode, the active layer, and the getter layer. Therefore, usually, the first electrode, the second electrode, the active layer, and the getter layer are located in a space surrounded by the protective layer and the substrate.
- the protective layer is preferably formed of a material having a property of blocking water vapor (water vapor barrier property) or a property of blocking oxygen (oxygen barrier property).
- suitable materials for the protective layer include trifluorinated polyethylene, polytrifluoroethylene chloride (PCTFE), polyimide, polycarbonate, polyethylene terephthalate, alicyclic polyolefin, and ethylene-vinyl alcohol copolymer.
- organic materials such as resins, inorganic materials such as silicon oxide, silicon nitride, aluminum oxide, and diamond-like carbon.
- the material of a protective layer may be used individually by 1 type, and may be used combining two or more types by arbitrary ratios.
- An additive may be included in the protective layer as necessary.
- the said getter agent will be mentioned.
- the protective layer contains a getter agent, the protective layer itself can function in the same manner as the getter layer, so that the amount of oxygen and water that enter the organic light source conversion element of the present invention can be further reduced. Thereby, it can prevent more effectively that the material in the organic photoelectric conversion element of this invention deteriorates with oxygen and water, and can implement
- the additive contained in a protective layer may be used individually by 1 type, and may be used combining two or more types by arbitrary ratios.
- the amount of the getter agent in the protective layer is usually 3% by volume or more, preferably 5% by volume or more, more preferably 10% by volume or more, and usually 50% by volume or less, preferably 30% by volume or less, more preferably 25%. % By volume or less. If the amount of the getter agent is too small, the effect of the getter agent may not be sufficiently exhibited, and if it is too large, oxygen and water may not be sufficiently blocked.
- the thickness of the protective layer depends on the type of material of the protective layer, but is usually 5 ⁇ m or more, preferably 10 ⁇ m or more, and usually 300 ⁇ m or less, preferably 100 ⁇ m or less, from the viewpoint of protection performance by the protective layer and production cost. is there.
- the active layer may be a single-layer structure including only one layer, or may be a layered structure including two or more layers.
- the protective layer can be formed by an arbitrary method depending on the type of material of the protective layer, and examples thereof include a vapor deposition method. Further, for example, the protective layer may be formed by applying a liquid composition containing a material for the protective layer by a coating method such as a spin coating method, a dip method, or a spray method. Furthermore, for example, a film-shaped molded product formed in advance may be formed by sticking with an adhesive or the like.
- the organic photoelectric conversion element of the present invention may include a functional layer between the first electrode and the active layer and between the second electrode and the active layer.
- the functional layer is a layer that can transport the charge generated in the active layer to the electrode, and the functional layer between the first electrode and the active layer can transport the charge generated in the active layer to the first electrode.
- a functional layer between the second electrode and the active layer can transport charges generated in the active layer to the second electrode.
- the functional layer may be provided on one or both of the first electrode and the active layer and between the second electrode and the active layer.
- the functional layer provided between the active layer and the anode can transport holes generated in the active layer to the anode, and is sometimes called a hole transport layer or an electron blocking layer.
- the functional layer provided between the active layer and the cathode can transport electrons generated in the active layer to the cathode, and is sometimes referred to as an electron transport layer or a hole blocking layer.
- the effective photoelectric conversion element of the present invention can increase the efficiency of extracting holes generated in the active layer at the anode, increase the efficiency of extracting electrons generated in the active layer at the cathode, It is possible to prevent holes generated in the layer from moving to the cathode and to prevent electrons generated in the active layer from moving to the anode, and to improve photoelectric conversion efficiency.
- the material of the functional layer may be any material that has the ability to transport charges generated in the active layer.
- the functional layer between the active layer and the anode preferably contains a material that has the ability to transport holes and can prevent electrons from moving to the functional layer.
- the functional layer between the active layer and the cathode preferably contains a material that has the ability to transport electrons and can prevent holes from moving to the functional layer.
- Examples of functional layer materials include alkali metal or alkaline earth metal halides and oxides such as lithium fluoride, inorganic semiconductors such as titanium dioxide, bathocuproine, bathophenanthroline and derivatives thereof, triazole compounds, tris ( 8-hydroxyquinolinate) aluminum complex, bis (4-methyl-8-quinolinato) aluminum complex, oxadiazole compound, distyrylarylene derivative, silole compound, 2,2 ′, 2 ′′-(1,3,5 -Benzenetolyl) tris- [1-phenyl-1H-benzimidazole] (TPBI) phthalocyanine derivative, naphthalocyanine derivative, porphyrin derivative, N, N'-bis (3-methylphenyl)-(1,1'-biphenyl) -4,4'-diamine (TPD), 4,4'-bi Aromatic diamine compounds such as [N- (naphthyl) -N-phenyl-amino] biphenyl
- the functional layer may contain other components in addition to the materials described above as long as the effects of the present invention are not significantly impaired.
- the other component may be used individually by 1 type, and may use 2 or more types together by arbitrary ratios.
- the thickness of the functional layer is usually 0.01 nm or more, preferably 0.1 nm or more, more preferably 1 nm or more, and usually 1000 nm or less, preferably 500 nm or less, more preferably 100 nm or less. If the functional layer is too thin, the function of the functional layer described above may not be sufficiently exhibited, and if it is too thick, the organic photoelectric conversion element may be excessively thick.
- the functional layer may be formed by, for example, a vapor deposition method, but is easy to form and can be manufactured at a low cost. Therefore, the functional layer is formed through a step of applying a liquid composition containing the functional layer material to a predetermined position. It is preferable.
- the method for forming the functional layer from the liquid composition will be described.
- the liquid composition for forming the functional layer usually contains a functional layer material and a solvent.
- the liquid composition may be a dispersion in which the functional layer material is dispersed in the solvent, or may be a solution in which the functional layer material is dissolved in the solvent.
- Examples of the solvent contained in the liquid composition for forming a functional layer include the same solvents as those contained in the liquid composition for forming an active layer.
- a solvent may be used individually by 1 type and may be used combining two or more types by arbitrary ratios.
- the amount of the solvent in the liquid composition is usually 100 parts by weight or more, preferably 1000 parts by weight or more, more preferably 10,000 parts by weight or more, and usually 1000000 parts by weight or less, preferably 100 parts by weight of the functional layer material. Is less than 100,000 parts by weight.
- the liquid composition After preparing the liquid composition for forming the functional layer, the liquid composition is applied to a predetermined position where the functional layer is to be formed. Usually, the liquid composition is applied onto a layer (usually a first electrode, a second electrode, or an active layer) that comes into contact with the functional layer in the organic photoelectric conversion device of the present invention.
- a layer usually a first electrode, a second electrode, or an active layer
- the coating method of a liquid composition the coating method similar to the coating method of the liquid composition for active layer formation is mentioned.
- the film containing the functional layer material is formed by applying the liquid composition for forming the functional layer. Therefore, after applying the liquid composition, the functional layer can be obtained by performing a process such as drying the formed film and removing the solvent, if necessary.
- the organic photoelectric conversion device of the present invention includes layers other than the substrate, the first electrode, the second electrode, the active layer, the getter layer, the protective layer, and the functional layer, as long as the effects of the present invention are not significantly impaired. May be.
- the photoelectric conversion element of the present invention may include a sealing material layer.
- a sealing material layer is a layer which protects the organic photoelectric conversion element of this invention from external air, dust, etc.
- the sealing material layer is formed as a sealing material layer covering the first electrode, the second electrode, the active layer, the getter layer, the protective layer, and the functional layer. Therefore, usually, the first electrode, the second electrode, the active layer, the getter layer, the protective layer, and the functional layer are located in the space formed by the sealant layer and the substrate.
- an inorganic sealing material or an organic sealing material may be used.
- inorganic sealing materials include silicon compounds such as silicon oxide, silicon nitride, silicon oxynitride and silicon carbide, aluminum compounds such as aluminum oxide, aluminum nitride and aluminum silicate, zirconium oxide, tantalum oxide and titanium oxide. And metal oxides such as titanium nitride, diamond-like carbon, and the like.
- organic sealing material include a photocurable resin and a thermosetting resin, and preferable examples include a silicone resin, an epoxy resin, a fluorine resin, and a wax.
- a sealing material may be used individually by 1 type, and may be used combining two or more types by arbitrary ratios.
- the thickness of the sealing material layer depends on the type of the sealing material, but is usually 1 ⁇ m or more, preferably 10 ⁇ m or more, and usually 100 ⁇ m or less from the viewpoints of the protection performance by the sealing material layer and the manufacturing cost.
- a method for forming the sealing material layer for example, in the case of a sealing material layer using an inorganic sealing material, a vapor-phase film-forming method may be mentioned.
- spin Examples thereof include a coating method, a dip method, a coating method such as a spray method, and a method of attaching a previously formed film-like molded product.
- an additive may be included in the sealing material layer as necessary.
- preferred additives include getter agents, wavelength conversion agents, and ultraviolet absorbers.
- an additive may be used individually by 1 type and may be used combining two or more types by arbitrary ratios.
- FIG. 1 is a schematic cross-sectional view of an organic photoelectric conversion device according to an embodiment of the present invention. In the following embodiments, a state in which the substrate of the organic photoelectric conversion element is placed horizontally will be described.
- An organic photoelectric conversion element 100 shown in FIG. 1 includes a first electrode 2 that functions as an anode, a functional layer 3 that functions as a hole transport layer, and an active layer 4 that can generate an electric charge upon incidence of visible light.
- a functional layer 5 functioning as an electron transporting layer a second electrode 6 functioning as a cathode, and a getter layer 7 capable of adsorbing oxygen and water.
- a terminal (not shown) is connected to the first electrode 2 and the second electrode 6 so that electricity can be taken out to the outside.
- the first electrode 2, the functional layer 3, the active layer 4, the functional layer 5, the second electrode 6 and the getter layer 7 are sealed by covering portions other than the terminals with the protective layer 8.
- a substrate 9 is provided on the protective layer 8.
- the organic photoelectric conversion element 100 is provided between the first electrode 2 and the second electrode 6 via the first electrode 2, the second electrode 6, and the functional layer 3 and the functional layer 5.
- An active layer 4 and a getter layer 7 are provided.
- the getter layer 7 is in contact with the entire surface of the upper surface (surface opposite to the first electrode 2) 6U of the second electrode 6.
- the organic photoelectric conversion element 100 is configured as described above, when irradiated with light, the irradiated light enters the active layer 4 and charges are generated in the active layer 4. As for the electric charges generated in the active layer 4, holes are transported from the functional layer 3 to the first electrode 2, and electrons are transported from the functional layer 5 to the second electrode 6, and are taken out through the terminals.
- the organic photoelectric conversion element 100 includes the protective layer 8, it is difficult for oxygen and water to enter the space surrounded by the substrate 1 and the protective layer 8. Further, even if oxygen and moisture penetrate through the protective layer 8 and enter the space, the penetrated oxygen and moisture can be adsorbed by the getter layer 7. Further, even if oxygen and moisture remaining in the device during the manufacturing process of the organic photoelectric conversion device 100 exist, the remaining oxygen and moisture can be adsorbed by the getter layer 7.
- the organic photoelectric conversion element 100 of the present embodiment the first electrode 2, the functional layer 3, the active layer 4, the functional layer 5, and the second electrode 6 can be hardly deteriorated by oxygen and moisture.
- the second electrode 6 since the second electrode 6 is in direct contact with the getter layer 7, deterioration (particularly oxidation) of the second electrode 6 due to oxygen and water can be effectively prevented.
- the organic photoelectric conversion element 100 is a long-life organic photoelectric conversion element that can maintain photoelectric conversion efficiency over a long period of time as compared with a conventional organic photoelectric conversion element.
- the example in which the far side to the getter layer 7 is an anode and the near side is a cathode is shown. Conversely, the far side to the getter layer 7 is a cathode and the near side is an anode. The same effect can be obtained.
- a photovoltaic force is generated between the electrodes of the organic photoelectric conversion element of the present invention by irradiation with light such as sunlight in the manner described above.
- the organic photoelectric conversion element of this invention can be used as a solar cell, for example using the said photovoltaic power.
- the organic photoelectric conversion element of the present invention is usually used as a solar battery cell of an organic thin film solar battery.
- a plurality of solar cells may be integrated into a solar cell module (organic thin film solar cell module) and used in the form of a solar cell module. Since the organic photoelectric conversion element of the present invention has a long lifetime as described above, a solar cell including the organic photoelectric conversion element of the present invention can be expected to have a long lifetime.
- the organic photoelectric conversion element of the present invention can be used as an organic photosensor.
- the organic photoelectric conversion element of the present invention when light is applied to the organic photoelectric conversion element of the present invention with voltage applied between the electrodes or without application, charges are generated. Therefore, if the charges are detected as photocurrents,
- the organic photoelectric conversion element can be operated as an organic light sensor. Furthermore, it can also be used as an organic image sensor by integrating a plurality of organic optical sensors.
- the solar cell module can basically have the same module structure as a conventional solar cell module.
- a solar cell module generally has a configuration in which solar cells are provided on a support substrate such as metal or ceramic, and the solar cell is covered with a filling resin, protective glass, or the like. Light can be captured through the opposite surface.
- the solar cell module has a configuration in which a transparent material such as tempered glass is used as a support substrate and solar cells are provided on the support substrate, and light can be taken in through the transparent support substrate. It may be.
- the configuration of the solar cell module for example, a super straight type, a substrate type, a potting type or the like module structure, a substrate integrated module structure used in an amorphous silicon solar cell, or the like is known.
- an appropriate module structure may be appropriately selected according to the purpose of use, the place of use, the environment, and the like.
- a super straight type and substrate type solar cell module which is a typical module structure, has a structure in which solar cells are arranged at regular intervals between a pair of support substrates.
- One or both of the support substrates are transparent and are usually subjected to antireflection treatment.
- Adjacent solar cells are electrically connected to each other by wiring such as metal leads and flexible wiring, and an integrated electrode is disposed on the outer edge portion of the solar cell module so that power generated in the solar cells can be taken out to the outside. It has become.
- a layer of a filling material such as a plastic material such as ethylene vinyl acetate (EVA) may be provided as necessary for protecting the solar cells and improving the current collection efficiency.
- the filling material may be attached after being formed into a film shape in advance, or may be cured after filling a resin at a desired position.
- one support substrate may not be provided.
- a surface protective layer is provided on the surface of the solar cell module on which the support substrate is not provided, for example, by covering with a transparent plastic film or by curing the resin after coating with a filling resin, thereby providing a protective function. It is preferable.
- the periphery of the support substrate is fixed by sandwiching the solar cell module with a metal frame in order to ensure the internal sealing and the rigidity of the solar cell module. Further, a hermetic seal is usually applied between the support substrate and the frame with a sealing material.
- the solar cell module can be used in a mode that takes advantage of the organic photoelectric conversion element.
- an organic photoelectric conversion element can be configured as a flexible element
- a solar cell module can be provided on a curved surface by using a flexible material as a support substrate, a filling material, a sealing material, and the like.
- a solar cell module can also be manufactured using a coating method.
- a coating method For example, when manufacturing a solar cell module using a flexible support such as a polymer film as a support substrate, solar cells are sequentially formed using a coating method or the like while feeding a roll-shaped flexible support, After cutting to a desired size, the solar cell module main body can be manufactured by sealing the periphery of the cut piece with a flexible and moisture-proof material.
- a solar cell module having a module structure called “SCAF” described in Solar Energy Materials and Solar Cells, 48, p383-391 can be obtained.
- the solar cell module using a flexible support can be used by being bonded and fixed to curved glass or the like.
- Example 1 A glass substrate on which an ITO film having a thickness of about 150 nm was patterned as a first electrode by sputtering was prepared.
- the prepared glass substrate was washed with an organic solvent, an alkaline detergent, and ultrapure water, dried, and then subjected to ultraviolet-ozone treatment (UV-O 3 treatment) using a UV-O 3 apparatus.
- UV-O 3 treatment ultraviolet-ozone treatment
- a suspension of poly (3,4) ethylenedioxythiophene / polystyrene sulfonic acid (manufactured by HC Starck B-Tech, Bytron P TP AI 4083) was prepared and filtered through a filter having a pore size of 0.5 micron.
- the filtered suspension was spin-coated on the surface of the glass substrate on which the ITO film was formed to form a film with a thickness of 70 nm. Thereafter, the film was dried on the hot plate at 200 ° C. for 10 minutes in the atmosphere to form a functional layer.
- polymer compound A which is an alternating polymer of the monomer represented by formula (3) and the monomer represented by formula (4), and [6,6] -phenyl C 61 butyric
- An orthodichlorobenzene solution containing acid methyl ester (hereinafter abbreviated as “[6,6] -PCBM” as appropriate) at a weight ratio of 1: 3 was prepared.
- the polymer compound A was 1% by weight with respect to orthodichlorobenzene.
- the prepared solution was stirred and mixed and subjected to ultrasonic treatment.
- the solution subjected to ultrasonic treatment was spin-coated on the functional layer, and then dried in an N 2 atmosphere. As a result, an active layer having a thickness of 100 nm was obtained.
- the polymer compound A had a polystyrene equivalent weight average molecular weight of 17,000 and a polystyrene equivalent number average molecular weight of 5,000. Furthermore, the light absorption edge wavelength of the polymer compound A was 925 nm.
- a functional layer is formed by forming a LiF film with a thickness of about 2.3 nm in a resistance heating vapor deposition apparatus, and subsequently forming a second electrode with a film of Al having a thickness of about 70 nm. Formed. A solution in which 5% by weight of titanium isopropoxide was dropped into acetone and mixed by stirring was prepared. The prepared solution was spin-coated on the second electrode and dried under reduced pressure to form a getter layer having a thickness of about 100 ⁇ m. Furthermore, sealing treatment was performed by adhering a glass substrate with an epoxy resin (rapid curing type araldite) as a sealing material from above the getter layer to obtain an organic photoelectric conversion element.
- an epoxy resin rapid curing type araldite
- Example 2 An organic photoelectric conversion device was produced in the same manner as in Example 1 except that aluminum-S-butoxide was used instead of titanium isopropoxide used in Example 1.
- Example 3 An organic photoelectric conversion element was obtained in the same manner as in Example 1 except that the active layer was formed as described below.
- the active layer was formed as follows. First, an orthodichlorobenzene solution containing poly (3-hexylthiophene) (hereinafter abbreviated as “P3HT” as appropriate) and [6,6] -PCBM at a weight ratio of 1: 0.8 was prepared. P3HT was 1% by weight with respect to orthodichlorobenzene. The prepared solution was stirred and mixed and subjected to ultrasonic treatment. The solution subjected to ultrasonic treatment was spin-coated on the functional layer, and then dried in an N 2 atmosphere. As a result, an active layer having a thickness of 150 nm was obtained.
- P3HT poly (3-hexylthiophene)
- the organic photoelectric conversion element of the present invention can be used for, for example, a solar cell, an optical sensor and the like.
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Abstract
L'invention concerne un élément de conversion photoélectrique organique présentant une longue durée de vie. Plus spécifiquement, l'invention concerne un élément de conversion photoélectrique organique (100) comprenant une première électrode (2), une seconde électrode (6), une couche active (4), ainsi qu'une couche absorbante (7). La couche active (4) est formée entre la première électrode (2) et la seconde électrode (6) et peut générer une charge électrique lors de l'incidence de lumière. La couche absorbante (7) est en contact avec une surface (6U) de la seconde électrode (6) qui est opposée à la première électrode (2) et peut absorber l'oxygène et l'eau.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009-250770 | 2009-10-30 | ||
JP2009250770 | 2009-10-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2011052572A1 true WO2011052572A1 (fr) | 2011-05-05 |
Family
ID=43921996
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2010/068946 WO2011052572A1 (fr) | 2009-10-30 | 2010-10-26 | Élément de conversion photoélectrique organique |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP5608040B2 (fr) |
WO (1) | WO2011052572A1 (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150303318A1 (en) * | 2012-01-06 | 2015-10-22 | Hitachi Chemical Company, Ltd. | Composition for forming passivation film, semiconductor substrate provided with passivation film and production method therefor, and photovoltaic cell element and production method therefor |
CN111430549A (zh) * | 2020-03-24 | 2020-07-17 | 杭州纤纳光电科技有限公司 | 一种钙钛矿太阳能电池及其制备方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3364473A4 (fr) * | 2015-10-16 | 2019-06-12 | Sumitomo Chemical Company, Limited | Élément de conversion photoélectrique organique |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05198832A (ja) * | 1991-09-30 | 1993-08-06 | Canon Inc | 太陽電池 |
JP2006068729A (ja) * | 2004-08-02 | 2006-03-16 | Dynic Corp | 透明性乾燥剤 |
JP2009099805A (ja) * | 2007-10-17 | 2009-05-07 | Komatsu Seiren Co Ltd | 有機薄膜太陽電池用ホットメルト型部材及び有機薄膜太陽電池素子筐体封止パネル |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1974386A4 (fr) * | 2006-01-04 | 2010-11-17 | Univ California | Couche de passivation utilisee dans des dispositifs electroniques flexibles |
JP2010034489A (ja) * | 2008-06-30 | 2010-02-12 | Mitsubishi Chemicals Corp | 膜状太陽電池及び太陽電池パネル |
-
2010
- 2010-10-26 WO PCT/JP2010/068946 patent/WO2011052572A1/fr active Application Filing
- 2010-10-27 JP JP2010241245A patent/JP5608040B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05198832A (ja) * | 1991-09-30 | 1993-08-06 | Canon Inc | 太陽電池 |
JP2006068729A (ja) * | 2004-08-02 | 2006-03-16 | Dynic Corp | 透明性乾燥剤 |
JP2009099805A (ja) * | 2007-10-17 | 2009-05-07 | Komatsu Seiren Co Ltd | 有機薄膜太陽電池用ホットメルト型部材及び有機薄膜太陽電池素子筐体封止パネル |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150303318A1 (en) * | 2012-01-06 | 2015-10-22 | Hitachi Chemical Company, Ltd. | Composition for forming passivation film, semiconductor substrate provided with passivation film and production method therefor, and photovoltaic cell element and production method therefor |
CN111430549A (zh) * | 2020-03-24 | 2020-07-17 | 杭州纤纳光电科技有限公司 | 一种钙钛矿太阳能电池及其制备方法 |
CN111430549B (zh) * | 2020-03-24 | 2023-02-21 | 杭州纤纳光电科技有限公司 | 一种钙钛矿太阳能电池及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2011119684A (ja) | 2011-06-16 |
JP5608040B2 (ja) | 2014-10-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5553727B2 (ja) | 有機光電変換素子及びその製造方法 | |
JP5608041B2 (ja) | 有機光電変換素子及び有機光電変換モジュール | |
WO2011052571A1 (fr) | Élément de conversion photoélectrique organique | |
WO2011052573A1 (fr) | Elément de conversion photoélectrique organique | |
WO2011052565A1 (fr) | Élément de conversion photoélectrique organique | |
US20120216866A1 (en) | Organic photovoltaic cell | |
US20120211741A1 (en) | Organic photovoltaic cell | |
KR101033304B1 (ko) | 발광특성을 가지는 유기 태양전지 및 그 제조방법 | |
JP2014053383A (ja) | タンデム型の有機光電変換素子およびこれを用いた太陽電池 | |
JP5608040B2 (ja) | 有機光電変換素子 | |
JP5715796B2 (ja) | 有機光電変換素子の製造方法 | |
JP5553728B2 (ja) | 有機光電変換素子 | |
WO2011052580A1 (fr) | Élément de conversion photoélectrique organique et procédé de fabrication associé | |
WO2012121274A1 (fr) | Procédé de production pour élément de conversion photoélectrique | |
WO2011052579A1 (fr) | Élément de conversion photoélectrique organique et procédé de fabrication associé | |
JP2013077760A (ja) | 有機光電変換素子およびこれを用いた太陽電池 | |
JP2011054947A (ja) | 光電変換素子用電極バッファー材料ならびにこれを用いた光電変換素子 | |
JP7166756B2 (ja) | 有機光電変換素子 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 10826704 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 10826704 Country of ref document: EP Kind code of ref document: A1 |