TW478130B - Method of manufacturing semiconductor devices, etching composition for manufacturing semiconductor devices, and semiconductor devices made thereby - Google Patents

Method of manufacturing semiconductor devices, etching composition for manufacturing semiconductor devices, and semiconductor devices made thereby Download PDF

Info

Publication number: TW478130B
Authority: TW; Taiwan
Prior art keywords: semiconductor substrate; manufacturing; layer; patent application; etching
Prior art date: 1998-06-25

Application number

TW087112709A

Other languages

English (en)

Chinese (zh)

Inventor

Gyu-Hwan Kwag

Se-Jong Ko

Kyung-Seuk Hwang

Jun-Ing Gil

Sang-O Park

Original Assignee

Samsung Electronics Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1998-06-25

Filing date

1999-06-25

Publication date

2002-03-01

1999-06-25 Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd

2002-03-01 Application granted granted Critical

2002-03-01 Publication of TW478130B publication Critical patent/TW478130B/zh

Links

239000004065 semiconductor Substances 0.000 title claims abstract description 231
238000005530 etching Methods 0.000 title claims abstract description 156
239000000203 mixture Substances 0.000 title claims abstract description 126
238000004519 manufacturing process Methods 0.000 title claims abstract description 70
239000010410 layer Substances 0.000 claims abstract description 292
239000000758 substrate Substances 0.000 claims abstract description 139
239000007800 oxidant agent Substances 0.000 claims abstract description 39
239000007853 buffer solution Substances 0.000 claims abstract description 33
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 31
229910052721 tungsten Inorganic materials 0.000 claims abstract description 31
239000010937 tungsten Substances 0.000 claims abstract description 31
230000001590 oxidative effect Effects 0.000 claims abstract description 27
239000011229 interlayer Substances 0.000 claims abstract description 17
GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 14
229910017604 nitric acid Inorganic materials 0.000 claims abstract description 14
VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims abstract description 7
235000011114 ammonium hydroxide Nutrition 0.000 claims abstract description 7
LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 claims abstract description 6
238000000034 method Methods 0.000 claims description 134
230000008569 process Effects 0.000 claims description 43
230000002093 peripheral effect Effects 0.000 claims description 39
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 34
239000008367 deionised water Substances 0.000 claims description 33
229910021641 deionized water Inorganic materials 0.000 claims description 33
230000004888 barrier function Effects 0.000 claims description 31
238000011049 filling Methods 0.000 claims description 28
239000007789 gas Substances 0.000 claims description 18
239000010949 copper Substances 0.000 claims description 17
239000000126 substance Substances 0.000 claims description 17
230000002079 cooperative effect Effects 0.000 claims description 13
229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 13
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 12
229910052802 copper Inorganic materials 0.000 claims description 12
239000000463 material Substances 0.000 claims description 11
239000004020 conductor Substances 0.000 claims description 9
239000007921 spray Substances 0.000 claims description 6
238000002156 mixing Methods 0.000 claims description 5
229910052719 titanium Inorganic materials 0.000 claims description 4
150000004767 nitrides Chemical class 0.000 claims description 3
238000007639 printing Methods 0.000 claims description 3
239000011261 inert gas Substances 0.000 claims description 2
239000004575 stone Substances 0.000 claims description 2
PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 2
238000010438 heat treatment Methods 0.000 claims 1
230000015572 biosynthetic process Effects 0.000 abstract description 10
KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 abstract description 4
MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 abstract description 3
229910004003 H5IO6 Inorganic materials 0.000 abstract description 2
TWLXDPFBEPBAQB-UHFFFAOYSA-N orthoperiodic acid Chemical compound OI(O)(O)(O)(O)=O TWLXDPFBEPBAQB-UHFFFAOYSA-N 0.000 abstract description 2
VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract 1
NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract 1
QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract 1
TVWHTOUAJSGEKT-UHFFFAOYSA-N chlorine trioxide Chemical compound [O]Cl(=O)=O TVWHTOUAJSGEKT-UHFFFAOYSA-N 0.000 abstract 1
125000002084 dioxo-lambda(5)-bromanyloxy group Chemical group *OBr(=O)=O 0.000 abstract 1
239000003623 enhancer Substances 0.000 abstract 1
235000011007 phosphoric acid Nutrition 0.000 abstract 1
235000011149 sulphuric acid Nutrition 0.000 abstract 1
125000000021 trioxo-lambda(7)-iodanyloxy group Chemical group *OI(=O)(=O)=O 0.000 abstract 1
238000005498 polishing Methods 0.000 description 22
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
235000012431 wafers Nutrition 0.000 description 16
229920002120 photoresistant polymer Polymers 0.000 description 15
239000002002 slurry Substances 0.000 description 12
239000010936 titanium Substances 0.000 description 11
229910052718 tin Inorganic materials 0.000 description 10
238000001459 lithography Methods 0.000 description 9
238000009434 installation Methods 0.000 description 8
229910052751 metal Inorganic materials 0.000 description 8
239000002184 metal Substances 0.000 description 8
238000010586 diagram Methods 0.000 description 7
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
239000005380 borophosphosilicate glass Substances 0.000 description 6
238000005229 chemical vapour deposition Methods 0.000 description 6
229910052710 silicon Inorganic materials 0.000 description 6
239000010703 silicon Substances 0.000 description 6
239000000243 solution Substances 0.000 description 6
235000012239 silicon dioxide Nutrition 0.000 description 5
239000000377 silicon dioxide Substances 0.000 description 5
-1 HF as a promoter Substances 0.000 description 3
229910052581 Si3N4 Inorganic materials 0.000 description 3
230000008859 change Effects 0.000 description 3
239000010408 film Substances 0.000 description 3
239000005360 phosphosilicate glass Substances 0.000 description 3
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
229910052814 silicon oxide Inorganic materials 0.000 description 3
229910001868 water Inorganic materials 0.000 description 3
BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
239000003990 capacitor Substances 0.000 description 2
238000006243 chemical reaction Methods 0.000 description 2
239000011248 coating agent Substances 0.000 description 2
238000000576 coating method Methods 0.000 description 2
239000003989 dielectric material Substances 0.000 description 2
239000011521 glass Substances 0.000 description 2
229910052735 hafnium Inorganic materials 0.000 description 2
VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 2
238000002955 isolation Methods 0.000 description 2
238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
229910044991 metal oxide Inorganic materials 0.000 description 2
150000004706 metal oxides Chemical class 0.000 description 2
238000012986 modification Methods 0.000 description 2
230000004048 modification Effects 0.000 description 2
230000003647 oxidation Effects 0.000 description 2
238000007254 oxidation reaction Methods 0.000 description 2
239000002245 particle Substances 0.000 description 2
230000007261 regionalization Effects 0.000 description 2
238000005507 spraying Methods 0.000 description 2
238000004544 sputter deposition Methods 0.000 description 2
241000545744 Hirudinea Species 0.000 description 1
206010061218 Inflammation Diseases 0.000 description 1
NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
230000005856 abnormality Effects 0.000 description 1
238000009825 accumulation Methods 0.000 description 1
230000009471 action Effects 0.000 description 1
210000004556 brain Anatomy 0.000 description 1
239000013043 chemical agent Substances 0.000 description 1
238000005253 cladding Methods 0.000 description 1
210000000078 claw Anatomy 0.000 description 1
238000004140 cleaning Methods 0.000 description 1
230000000694 effects Effects 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
150000004820 halides Chemical class 0.000 description 1
230000004054 inflammatory process Effects 0.000 description 1
238000009413 insulation Methods 0.000 description 1
230000001678 irradiating effect Effects 0.000 description 1
230000002045 lasting effect Effects 0.000 description 1
235000012054 meals Nutrition 0.000 description 1
238000005192 partition Methods 0.000 description 1
229920005591 polysilicon Polymers 0.000 description 1
239000007787 solid Substances 0.000 description 1
229910052715 tantalum Inorganic materials 0.000 description 1
239000010409 thin film Substances 0.000 description 1
239000011135 tin Substances 0.000 description 1

Classifications

- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation

Landscapes

Engineering & Computer Science (AREA)
Chemical & Material Sciences (AREA)
Computer Hardware Design (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Materials Engineering (AREA)
Organic Chemistry (AREA)
Inorganic Chemistry (AREA)
Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Weting (AREA)
Electrodes Of Semiconductors (AREA)

TW087112709A 1998-06-25 1999-06-25 Method of manufacturing semiconductor devices, etching composition for manufacturing semiconductor devices, and semiconductor devices made thereby TW478130B (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
KR19980024232		1998-06-25
KR1019980031544A KR100271769B1 (ko)	1998-06-25	1998-08-03	반도체소자의 제조방법, 이를 위한 반도체소자 제조용 식각액조성물 및 반도체소자

Publications (1)

Publication Number	Publication Date
TW478130B true TW478130B (en)	2002-03-01

Family

ID=26633814

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW087112709A TW478130B (en)	1998-06-25	1999-06-25	Method of manufacturing semiconductor devices, etching composition for manufacturing semiconductor devices, and semiconductor devices made thereby

Country Status (5)

Country	Link
JP (3)	JP4180741B2 (ko)
KR (1)	KR100271769B1 (ko)
DE (1)	DE19928570B4 (ko)
NL (1)	NL1012430C2 (ko)
TW (1)	TW478130B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
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TWI614804B (zh) *	2011-12-27	2018-02-11	富士軟片股份有限公司	半導體基板製品的製造方法以及其利用的蝕刻方法

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US20010054706A1 (en) *	1999-07-19	2001-12-27	Joseph A. Levert	Compositions and processes for spin etch planarization
KR100641950B1 (ko) *	2000-06-27	2006-11-02	주식회사 하이닉스반도체	반도체소자의 콘택플러그 형성방법
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KR100372647B1 (ko) *	2000-10-13	2003-02-19	주식회사 하이닉스반도체	다마신 금속게이트 형성방법
AU2001296420A1 (en) *	2000-11-28	2002-06-11	Lightcross, Inc	Formation of a smooth surface on an optical component
JP3609761B2 (ja)	2001-07-19	2005-01-12	三洋電機株式会社	半導体装置の製造方法
KR100881388B1 (ko) *	2002-11-04	2009-02-05	주식회사 하이닉스반도체	반도체 소자의 제조 방법
KR100536593B1 (ko) *	2002-12-05	2005-12-14	삼성전자주식회사	선택적인 막 제거를 위한 세정 용액 및 그 세정 용액을사용하여 실리사이드 공정에서 막을 선택적으로 제거하는방법
JP4355201B2 (ja) *	2003-12-02	2009-10-28	関東化学株式会社	タングステン金属除去液及びそれを用いたタングステン金属の除去方法
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KR100624089B1 (ko)	2005-07-12	2006-09-15	삼성전자주식회사	패턴 형성 방법, 이를 이용한 다중게이트 산화막 및 플래쉬메모리 셀의 제조 방법
KR101264421B1 (ko)	2005-12-09	2013-05-14	동우 화인켐 주식회사	금속막 식각용액
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JP4906417B2 (ja) *	2006-07-11	2012-03-28	ラピスセミコンダクタ株式会社	半導体装置の製造方法
KR100860367B1 (ko)	2006-08-21	2008-09-25	제일모직주식회사	금속실리사이드막 대비 실리콘 산화막에 대한 상대적인 식각 선택성이 향상된 식각용액
JP5017709B2 (ja)	2006-09-07	2012-09-05	ジルトロニックアクチエンゲゼルシャフト	シリコンウェーハのエッチング方法および半導体シリコンウェーハの製造方法
JP5047881B2 (ja) *	2007-07-13	2012-10-10	東京応化工業株式会社	窒化チタン剥離液、及び窒化チタン被膜の剥離方法
US8623236B2 (en)	2007-07-13	2014-01-07	Tokyo Ohka Kogyo Co., Ltd.	Titanium nitride-stripping liquid, and method for stripping titanium nitride coating film
JP5439466B2 (ja) *	2011-12-26	2014-03-12	富士フイルム株式会社	シリコンエッチング方法、これに用いられるシリコンエッチング液、及びそのキット
JP2014146623A (ja) *	2013-01-25	2014-08-14	Fujifilm Corp	半導体基板のエッチング方法、エッチング液及び半導体素子の製造方法
JP6454605B2 (ja)	2015-06-01	2019-01-16	東芝メモリ株式会社	基板処理方法および基板処理装置
JP6917807B2 (ja) *	2017-07-03	2021-08-11	東京エレクトロン株式会社	基板処理方法
JP7398969B2 (ja) *	2019-03-01	2023-12-15	東京エレクトロン株式会社	基板処理方法、基板処理装置および記憶媒体

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1998
- 1998-08-03 KR KR1019980031544A patent/KR100271769B1/ko not_active IP Right Cessation
1999
- 1999-06-22 DE DE19928570A patent/DE19928570B4/de not_active Expired - Fee Related
- 1999-06-24 JP JP17850599A patent/JP4180741B2/ja not_active Expired - Fee Related
- 1999-06-24 NL NL1012430A patent/NL1012430C2/nl not_active IP Right Cessation
- 1999-06-25 TW TW087112709A patent/TW478130B/zh active
2004
- 2004-10-26 JP JP2004310392A patent/JP4343084B2/ja not_active Expired - Fee Related
- 2004-10-26 JP JP2004310391A patent/JP2005057304A/ja active Pending

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TWI614804B (zh) *	2011-12-27	2018-02-11	富士軟片股份有限公司	半導體基板製品的製造方法以及其利用的蝕刻方法

Also Published As

Publication number	Publication date
DE19928570B4 (de)	2008-04-10
JP2000031114A (ja)	2000-01-28
JP4343084B2 (ja)	2009-10-14
KR100271769B1 (ko)	2001-02-01
NL1012430C2 (nl)	2004-10-13
DE19928570A1 (de)	1999-12-30
JP4180741B2 (ja)	2008-11-12
JP2005045285A (ja)	2005-02-17
JP2005057304A (ja)	2005-03-03
NL1012430A1 (nl)	2000-01-04
KR20000004840A (ko)	2000-01-25

Publication	Publication Date	Title
TW478130B (en)	2002-03-01	Method of manufacturing semiconductor devices, etching composition for manufacturing semiconductor devices, and semiconductor devices made thereby
US6232228B1 (en)	2001-05-15	Method of manufacturing semiconductor devices, etching composition for manufacturing semiconductor devices, and semiconductor devices made using the method
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2001-10-30	GD4A	Issue of patent certificate for granted invention patent

TW478130B - Method of manufacturing semiconductor devices, etching composition for manufacturing semiconductor devices, and semiconductor devices made thereby - Google Patents

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