[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

KR910001781A - 반도체 메모리장치에 있어서 메모리 테스트용 멀티바이트 광역 병렬 라이트회로 - Google Patents

반도체 메모리장치에 있어서 메모리 테스트용 멀티바이트 광역 병렬 라이트회로

Info

Publication number
KR910001781A
KR910001781A KR1019890008098A KR890008098A KR910001781A KR 910001781 A KR910001781 A KR 910001781A KR 1019890008098 A KR1019890008098 A KR 1019890008098A KR 890008098 A KR890008098 A KR 890008098A KR 910001781 A KR910001781 A KR 910001781A
Authority
KR
South Korea
Prior art keywords
multibyte
wide area
write circuit
area parallel
parallel write
Prior art date
Application number
KR1019890008098A
Other languages
English (en)
Other versions
KR920001082B1 (ko
Inventor
최윤호
Original Assignee
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자 주식회사 filed Critical 삼성전자 주식회사
Priority to KR1019890008098A priority Critical patent/KR920001082B1/ko
Priority to US07/488,739 priority patent/US5202853A/en
Priority to JP02081485A priority patent/JP3090146B2/ja
Priority to DE4018296A priority patent/DE4018296A1/de
Priority to GB9013159A priority patent/GB2235555B/en
Publication of KR910001781A publication Critical patent/KR910001781A/ko
Application granted granted Critical
Publication of KR920001082B1 publication Critical patent/KR920001082B1/ko

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/30—Accessing single arrays
    • G11C29/34—Accessing multiple bits simultaneously
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/18—Address generation devices; Devices for accessing memories, e.g. details of addressing circuits
    • G11C29/26—Accessing multiple arrays
    • G11C29/28—Dependent multiple arrays, e.g. multi-bit arrays
KR1019890008098A 1989-06-13 1989-06-13 반도체 메모리장치에 있어서 메모리 테스트용 멀티바이트 광역 병렬 라이트회로 KR920001082B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1019890008098A KR920001082B1 (ko) 1989-06-13 1989-06-13 반도체 메모리장치에 있어서 메모리 테스트용 멀티바이트 광역 병렬 라이트회로
US07/488,739 US5202853A (en) 1989-06-13 1990-02-28 Circuit for performing a parallel write test of a wide multiple byte for use in a semiconductor memory device
JP02081485A JP3090146B2 (ja) 1989-06-13 1990-03-30 メモリテスト用マルチバイトワイド並列ライト回路
DE4018296A DE4018296A1 (de) 1989-06-13 1990-06-07 Elektrische schaltung fuer einen parallelschreibtest eines breiten mehrfachbytes in einer halbleiterspeichereinrichtung
GB9013159A GB2235555B (en) 1989-06-13 1990-06-13 Circuits for performing parallel write test in a semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890008098A KR920001082B1 (ko) 1989-06-13 1989-06-13 반도체 메모리장치에 있어서 메모리 테스트용 멀티바이트 광역 병렬 라이트회로

Publications (2)

Publication Number Publication Date
KR910001781A true KR910001781A (ko) 1991-01-31
KR920001082B1 KR920001082B1 (ko) 1992-02-01

Family

ID=19287037

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890008098A KR920001082B1 (ko) 1989-06-13 1989-06-13 반도체 메모리장치에 있어서 메모리 테스트용 멀티바이트 광역 병렬 라이트회로

Country Status (5)

Country Link
US (1) US5202853A (ko)
JP (1) JP3090146B2 (ko)
KR (1) KR920001082B1 (ko)
DE (1) DE4018296A1 (ko)
GB (1) GB2235555B (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100459698B1 (ko) * 2002-02-08 2004-12-04 삼성전자주식회사 병렬검사되는 개수를 증가시키는 반도체 소자의 전기적검사방법

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2681969B1 (fr) * 1991-09-26 1993-12-24 Hewlett Packard Cy Dispositif d'indication de la presence d'un composant optionnel sur une carte.
JP3251637B2 (ja) * 1992-05-06 2002-01-28 株式会社東芝 半導体記憶装置
JP3293935B2 (ja) * 1993-03-12 2002-06-17 株式会社東芝 並列ビットテストモード内蔵半導体メモリ
WO1995030227A1 (en) * 1994-04-29 1995-11-09 Texas Instruments Incorporated A method and apparatus for testing a memory circuit with parallel block write operation
US5574692A (en) * 1995-06-07 1996-11-12 Lsi Logic Corporation Memory testing apparatus for microelectronic integrated circuit
US6111800A (en) * 1997-12-05 2000-08-29 Cypress Semiconductor Corporation Parallel test for asynchronous memory
KR100269319B1 (ko) * 1997-12-29 2000-10-16 윤종용 동시칼럼선택라인활성화회로를구비하는반도체메모리장치및칼럼선택라인제어방법
KR100308191B1 (ko) * 1998-05-28 2001-11-30 윤종용 빌트-인패럴테스트회로를구비한반도체메모리장치
JP4216415B2 (ja) * 1999-08-31 2009-01-28 株式会社ルネサステクノロジ 半導体装置
KR100487946B1 (ko) * 2002-08-29 2005-05-06 삼성전자주식회사 반도체 테스트 시스템 및 이 시스템의 테스트 방법
KR100723889B1 (ko) * 2006-06-30 2007-05-31 주식회사 하이닉스반도체 직렬 입/출력 인터페이스를 가진 멀티 포트 메모리 소자
US20080141082A1 (en) * 2006-12-06 2008-06-12 Atmel Corporation Test mode multi-byte programming with internal verify and polling function
KR20120119532A (ko) * 2011-04-21 2012-10-31 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그의 테스트 방법
KR20160034698A (ko) * 2014-09-22 2016-03-30 에스케이하이닉스 주식회사 반도체장치 및 이를 포함하는 반도체시스템
WO2020030590A1 (en) * 2018-08-08 2020-02-13 Numascale As A digital circuit testing and analysis module, system and method thereof
CN116597878B (zh) * 2023-07-17 2023-12-01 长鑫存储技术有限公司 数据处理电路及存储器

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60115099A (ja) * 1983-11-25 1985-06-21 Fujitsu Ltd 半導体記憶装置
US4630240A (en) * 1984-07-02 1986-12-16 Texas Instruments Incorporated Dynamic memory with intermediate column derode
KR900005666B1 (ko) * 1984-08-30 1990-08-03 미쓰비시전기 주식회사 반도체기억장치
JPS61202400A (ja) * 1985-03-05 1986-09-08 Mitsubishi Electric Corp 半導体記憶装置
EP0253161B1 (en) * 1986-06-25 1991-10-16 Nec Corporation Testing circuit for random access memory device
JPS6337894A (ja) * 1986-07-30 1988-02-18 Mitsubishi Electric Corp ランダムアクセスメモリ
JPS63257999A (ja) * 1987-04-15 1988-10-25 Mitsubishi Electric Corp 半導体記憶装置
KR900006293B1 (ko) * 1987-06-20 1990-08-27 삼성전자 주식회사 씨모오스 디램의 데이터 전송회로
JPH01109599A (ja) * 1987-10-22 1989-04-26 Nec Corp 書込み・消去可能な半導体記憶装置
JPH0697560B2 (ja) * 1987-11-19 1994-11-30 三菱電機株式会社 半導体記憶装置
JP2680007B2 (ja) * 1987-12-04 1997-11-19 株式会社日立製作所 半導体メモリ
GB2222461B (en) * 1988-08-30 1993-05-19 Mitsubishi Electric Corp On chip testing of semiconductor memory devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100459698B1 (ko) * 2002-02-08 2004-12-04 삼성전자주식회사 병렬검사되는 개수를 증가시키는 반도체 소자의 전기적검사방법

Also Published As

Publication number Publication date
GB2235555B (en) 1993-08-18
GB2235555A (en) 1991-03-06
DE4018296C2 (ko) 1992-06-04
DE4018296A1 (de) 1990-12-20
GB9013159D0 (en) 1990-08-01
US5202853A (en) 1993-04-13
JP3090146B2 (ja) 2000-09-18
JPH0330199A (ja) 1991-02-08
KR920001082B1 (ko) 1992-02-01

Similar Documents

Publication Publication Date Title
DE69024773D1 (de) Halbleiterspeicherschaltungsanordnung
DE69024851D1 (de) Halbleiterspeicheranordnung
KR890015268A (ko) 반도체 기억회로
DE69027065D1 (de) Halbleiterspeicheranordnung
GB2266610B (en) Semiconductor memory device with test circuit
DE68926811D1 (de) Halbleiterspeicheranordnung
KR940008674U (ko) 반도체 메모리의 번 인 테스트(Burn-In Test) 장치
KR900010988A (ko) 반도체 집적회로장치
KR900008673A (ko) 반도체집적회로장치
KR910001781A (ko) 반도체 메모리장치에 있어서 메모리 테스트용 멀티바이트 광역 병렬 라이트회로
KR900012276A (ko) 다이내믹형 반도체기억장치
KR890017789A (ko) 반도체 집적회로장치
KR900017269A (ko) 반도체 집적회로 장치
KR860005446A (ko) 메모리 테스트 패턴 발생회로를 포함한 반도체 장치
DE69029013D1 (de) Programmierbare Halbleiterspeicheranordnung
DE69027953D1 (de) Halbleiterspeichervorrichtung
DE68926124D1 (de) Halbleiterspeicheranordnung
DE69030914D1 (de) Halbleiterspeicheranordnung
DE69031847D1 (de) Halbleiterspeicherbauteil
KR900012280A (ko) 반도체기억장치
DE69118220D1 (de) Halbleiterspeicher mit eingebauter Prüfschaltung
KR900012267A (ko) 반도체 메모리용 센스회로
DE69024112D1 (de) Halbleiterspeicheranordnung
DE69026899D1 (de) Integriertes Halbleiterschaltungsgerät mit Prüfschaltung
DE69024167D1 (de) Halbleiterspeicheranordnung

Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20090202

Year of fee payment: 18

EXPY Expiration of term