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KR20180084824A - 감방사선성 조성물, 패턴 형성 방법 및 감방사선성 산 발생제 - Google Patents

감방사선성 조성물, 패턴 형성 방법 및 감방사선성 산 발생제 Download PDF

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Publication number
KR20180084824A
KR20180084824A KR1020187015095A KR20187015095A KR20180084824A KR 20180084824 A KR20180084824 A KR 20180084824A KR 1020187015095 A KR1020187015095 A KR 1020187015095A KR 20187015095 A KR20187015095 A KR 20187015095A KR 20180084824 A KR20180084824 A KR 20180084824A
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KR
South Korea
Prior art keywords
radiation
sensitive
forming method
pattern forming
acid generator
Prior art date
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KR1020187015095A
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English (en)
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KR102648061B1 (ko
Inventor
도모키 나가이
다케히코 나루오카
켄 마루야마
모토히로 시라타니
히사시 나카가와
Original Assignee
제이에스알 가부시끼가이샤
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Publication of KR20180084824A publication Critical patent/KR20180084824A/ko
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Publication of KR102648061B1 publication Critical patent/KR102648061B1/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C303/00—Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides
    • C07C303/32—Preparation of esters or amides of sulfuric acids; Preparation of sulfonic acids or of their esters, halides, anhydrides or amides of salts of sulfonic acids
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01—Sulfonic acids
    • C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
    • C07C309/06—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing halogen atoms, or nitro or nitroso groups bound to the carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01—Sulfonic acids
    • C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
    • C07C309/07—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton
    • C07C309/12—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing oxygen atoms bound to the carbon skeleton containing esterified hydroxy groups bound to the carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01—Sulfonic acids
    • C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/19—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of a saturated carbon skeleton containing rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01—Sulfonic acids
    • C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/24—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of a carbon skeleton containing six-membered aromatic rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020187015095A 2015-12-01 2016-11-11 감방사선성 조성물, 패턴 형성 방법 및 감방사선성 산 발생제 KR102648061B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015235237 2015-12-01
JPJP-P-2015-235237 2015-12-01
PCT/JP2016/083609 WO2017094479A1 (ja) 2015-12-01 2016-11-11 感放射線性組成物、パターン形成方法及び感放射線性酸発生剤

Publications (2)

Publication Number Publication Date
KR20180084824A true KR20180084824A (ko) 2018-07-25
KR102648061B1 KR102648061B1 (ko) 2024-03-18

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ID=58797113

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KR1020187015095A KR102648061B1 (ko) 2015-12-01 2016-11-11 감방사선성 조성물, 패턴 형성 방법 및 감방사선성 산 발생제

Country Status (5)

Country Link
US (1) US11204552B2 (ko)
JP (1) JP6886113B2 (ko)
KR (1) KR102648061B1 (ko)
TW (1) TWI697735B (ko)
WO (1) WO2017094479A1 (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109851539A (zh) * 2017-11-30 2019-06-07 罗门哈斯电子材料有限责任公司 盐和包含其的光致抗蚀剂
TWI733069B (zh) 2017-12-31 2021-07-11 美商羅門哈斯電子材料有限公司 單體、聚合物及包含其的微影組合物
JP7024744B2 (ja) * 2018-02-22 2022-02-24 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
US11131927B2 (en) * 2018-05-09 2021-09-28 Tokyo Ohka Kogyo Co., Ltd. Chemically amplified positive-type photosensitive resin composition, photosensitive dry film, method of manufacturing photosensitive dry film, method of manufacturing patterned resist film, method of manufacturing substrate with template and method of manufacturing plated article
WO2020116238A1 (ja) * 2018-12-05 2020-06-11 富士フイルム株式会社 パターン形成方法、感光性樹脂組成物、硬化膜、積層体、及び、デバイス
WO2021029422A1 (ja) * 2019-08-15 2021-02-18 Jsr株式会社 感放射線性組成物及びレジストパターン形成方法
CN114303098A (zh) * 2019-08-29 2022-04-08 富士胶片株式会社 感光化射线性或感放射线性树脂组合物、感光化射线性或感放射线性膜、图案形成方法及电子器件的制造方法
CN114728306B (zh) * 2019-11-14 2024-06-14 共荣社化学株式会社 热固性树脂组合物、固化膜、多层涂膜的形成方法、酯化合物以及聚合物

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08146610A (ja) 1994-11-17 1996-06-07 Nippon Zeon Co Ltd レジスト組成物及びそれを用いたパターン形成方法
JPH10226658A (ja) * 1996-10-03 1998-08-25 Alain Vallee フッ素化されたイオン性スルホニルイミド及びスルホニルメチリド、それらの製造方法並びに光開始剤としての使用
JPH11125907A (ja) 1997-08-18 1999-05-11 Jsr Corp 感放射線性樹脂組成物
JP2000298347A (ja) 1998-08-28 2000-10-24 Shipley Co Llc 新規なポリマー及びそれらを含有してなるフォトレジスト組成物
US20080274432A1 (en) * 2007-04-07 2008-11-06 Tsutomu Ogihara Silicone-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method
JP2010152136A (ja) * 2008-12-25 2010-07-08 Fujitsu Ltd レジスト組成物及びそれを用いた半導体装置の製造方法
US20100209827A1 (en) * 2009-02-19 2010-08-19 Shin-Etsu Chemical Co., Ltd. Novel sulfonate and its derivative, photosensitive acid generator, and resist composition and patterning process using the same
US20110183264A1 (en) * 2008-09-12 2011-07-28 Sumitomo Chemical Company, Limited Resist processing method and use of positive type resist composition
US20120270155A1 (en) * 2011-04-20 2012-10-25 Tokyo Ohka Kogyo Co., Ltd. Compound, polymeric compound, acid generator, resist composition, and method of forming resist pattern
US20140120469A1 (en) * 2012-10-31 2014-05-01 Rohm And Haas Electronic Materials Llc Thermal acid generators for use in photoresist
JP2015172727A (ja) * 2014-02-21 2015-10-01 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、及び、パターン形成方法、並びに、これらを用いた電子デバイスの製造方法、及び、電子デバイス

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* Cited by examiner, † Cited by third party
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KR100551653B1 (ko) 1997-08-18 2006-05-25 제이에스알 가부시끼가이샤 감방사선성수지조성물
TWI432408B (zh) * 2007-01-09 2014-04-01 Jsr Corp 化合物及敏輻射線性組成物
JP2009134088A (ja) 2007-11-30 2009-06-18 Jsr Corp 感放射線性樹脂組成物
JP4998293B2 (ja) * 2008-01-31 2012-08-15 Ｊｓｒ株式会社 着色層形成用感放射線性組成物、カラーフィルタおよびカラー液晶表示素子
EP2472321A1 (en) * 2010-12-31 2012-07-04 Rohm and Haas Electronic Materials LLC Method of preparing photoacid-generating monomer
EP2472322A2 (en) * 2010-12-31 2012-07-04 Rohm and Haas Electronic Materials LLC Photoacid generating monomer and precursor thereof

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08146610A (ja) 1994-11-17 1996-06-07 Nippon Zeon Co Ltd レジスト組成物及びそれを用いたパターン形成方法
JPH10226658A (ja) * 1996-10-03 1998-08-25 Alain Vallee フッ素化されたイオン性スルホニルイミド及びスルホニルメチリド、それらの製造方法並びに光開始剤としての使用
JPH11125907A (ja) 1997-08-18 1999-05-11 Jsr Corp 感放射線性樹脂組成物
JP2000298347A (ja) 1998-08-28 2000-10-24 Shipley Co Llc 新規なポリマー及びそれらを含有してなるフォトレジスト組成物
US20080274432A1 (en) * 2007-04-07 2008-11-06 Tsutomu Ogihara Silicone-containing film-forming composition, silicon-containing film, silicon-containing film-bearing substrate, and patterning method
US20110183264A1 (en) * 2008-09-12 2011-07-28 Sumitomo Chemical Company, Limited Resist processing method and use of positive type resist composition
JP2010152136A (ja) * 2008-12-25 2010-07-08 Fujitsu Ltd レジスト組成物及びそれを用いた半導体装置の製造方法
US20100209827A1 (en) * 2009-02-19 2010-08-19 Shin-Etsu Chemical Co., Ltd. Novel sulfonate and its derivative, photosensitive acid generator, and resist composition and patterning process using the same
US20120270155A1 (en) * 2011-04-20 2012-10-25 Tokyo Ohka Kogyo Co., Ltd. Compound, polymeric compound, acid generator, resist composition, and method of forming resist pattern
US20140120469A1 (en) * 2012-10-31 2014-05-01 Rohm And Haas Electronic Materials Llc Thermal acid generators for use in photoresist
JP2015172727A (ja) * 2014-02-21 2015-10-01 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、及び、パターン形成方法、並びに、これらを用いた電子デバイスの製造方法、及び、電子デバイス

Also Published As

Publication number Publication date
TWI697735B (zh) 2020-07-01
US11204552B2 (en) 2021-12-21
JP6886113B2 (ja) 2021-06-16
US20200041902A9 (en) 2020-02-06
US20180267406A1 (en) 2018-09-20
KR102648061B1 (ko) 2024-03-18
JPWO2017094479A1 (ja) 2018-11-01
TW201728997A (zh) 2017-08-16
WO2017094479A1 (ja) 2017-06-08

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