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JPS5743413A - Semiconductor element and method of producing same - Google Patents

Semiconductor element and method of producing same

Info

Publication number
JPS5743413A
JPS5743413A JP56073356A JP7335681A JPS5743413A JP S5743413 A JPS5743413 A JP S5743413A JP 56073356 A JP56073356 A JP 56073356A JP 7335681 A JP7335681 A JP 7335681A JP S5743413 A JPS5743413 A JP S5743413A
Authority
JP
Japan
Prior art keywords
semiconductor element
producing same
producing
same
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56073356A
Other languages
English (en)
Other versions
JPS6236633B2 (ja
Inventor
Aaru Obushinsukii Sutanfuoodo
Deii Kiyanera Binsento
Izu Masatsugu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of JPS5743413A publication Critical patent/JPS5743413A/ja
Publication of JPS6236633B2 publication Critical patent/JPS6236633B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
    • H01L31/046—
    • H01L31/18—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Development (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
JP56073356A 1980-05-19 1981-05-15 Semiconductor element and method of producing same Granted JPS5743413A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/151,301 US4400409A (en) 1980-05-19 1980-05-19 Method of making p-doped silicon films

Publications (2)

Publication Number Publication Date
JPS5743413A true JPS5743413A (en) 1982-03-11
JPS6236633B2 JPS6236633B2 (ja) 1987-08-07

Family

ID=22538142

Family Applications (5)

Application Number Title Priority Date Filing Date
JP56073356A Granted JPS5743413A (en) 1980-05-19 1981-05-15 Semiconductor element and method of producing same
JP1152074A Expired - Lifetime JP2539916B2 (ja) 1980-05-19 1981-05-15 光起電力素子
JP56075588A Granted JPS57122581A (en) 1980-05-19 1981-05-19 Method and device for producing solar battery as well as method and chamber for coating amorphous silicon
JP60077525A Granted JPS6122622A (ja) 1980-05-19 1985-04-11 光起電力パネルの製造方法及び装置
JP61054540A Granted JPS61287176A (ja) 1980-05-19 1986-03-12 半導体素子の製造方法

Family Applications After (4)

Application Number Title Priority Date Filing Date
JP1152074A Expired - Lifetime JP2539916B2 (ja) 1980-05-19 1981-05-15 光起電力素子
JP56075588A Granted JPS57122581A (en) 1980-05-19 1981-05-19 Method and device for producing solar battery as well as method and chamber for coating amorphous silicon
JP60077525A Granted JPS6122622A (ja) 1980-05-19 1985-04-11 光起電力パネルの製造方法及び装置
JP61054540A Granted JPS61287176A (ja) 1980-05-19 1986-03-12 半導体素子の製造方法

Country Status (19)

Country Link
US (1) US4400409A (ja)
JP (5) JPS5743413A (ja)
KR (3) KR840000756B1 (ja)
AU (3) AU542845B2 (ja)
BR (1) BR8103030A (ja)
CA (1) CA1184096A (ja)
DE (3) DE3119481C2 (ja)
ES (3) ES502281A0 (ja)
FR (1) FR2482786B1 (ja)
GB (3) GB2076433B (ja)
IE (1) IE52688B1 (ja)
IL (1) IL62883A (ja)
IN (1) IN155670B (ja)
IT (1) IT1135827B (ja)
MX (1) MX155307A (ja)
NL (1) NL8102411A (ja)
PH (1) PH18408A (ja)
SE (1) SE456380B (ja)
ZA (1) ZA813076B (ja)

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58174570A (ja) * 1982-03-29 1983-10-13 エナージー・コンバーション・デバイセス・インコーポレーテッド グロー放電法による膜形成装置
JPS58196063A (ja) * 1982-05-10 1983-11-15 Matsushita Electric Ind Co Ltd 光起電力素子の製造方法
JPS5934668A (ja) * 1982-08-21 1984-02-25 Agency Of Ind Science & Technol 薄膜太陽電池の製造方法
JPS5950575A (ja) * 1982-09-16 1984-03-23 Agency Of Ind Science & Technol 太陽電池の製造方法
JPS59100516A (ja) * 1982-11-12 1984-06-09 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド 光電池素子の製造装置及びアセンブリ
JPS59155123A (ja) * 1982-12-22 1984-09-04 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド グロ−放電デポジシヨン装置
JPS59155124A (ja) * 1982-12-22 1984-09-04 エナ−ジ−・コンバ−シヨン・デバイセス・インコ−ポレ−テツド アツプストリ−ムカソ−ドアセンブリ
JPS59177922A (ja) * 1983-03-14 1984-10-08 エナージー・コンバーション・デバイセス・インコーポレーテッド プロセスガス導入及び移送システム
JPS59201471A (ja) * 1983-04-29 1984-11-15 Semiconductor Energy Lab Co Ltd 光電変換半導体装置
JPS59201472A (ja) * 1983-04-29 1984-11-15 Semiconductor Energy Lab Co Ltd 光電変換半導体装置作製方法
JPS59228716A (ja) * 1983-06-10 1984-12-22 Sanyo Electric Co Ltd 気相成長法
JPS6015918A (ja) * 1983-06-23 1985-01-26 エナージー・コンバーション・デバイセス・インコーポレーテッド 外部隔離モジユ−ル
JPS60119784A (ja) * 1983-12-01 1985-06-27 Kanegafuchi Chem Ind Co Ltd 絶縁金属基板の製法およびそれに用いる装置
JPS60214572A (ja) * 1984-04-11 1985-10-26 Matsushita Electric Ind Co Ltd 薄膜太陽電池およびその製造方法
JPS6142972A (ja) * 1984-08-06 1986-03-01 Showa Alum Corp ａ−Ｓｉ太陽電池用基板の製造方法
JPS61133675A (ja) * 1984-12-03 1986-06-20 Showa Alum Corp ａ−Ｓｉ太陽電池用基板の製造方法
JPS61133676A (ja) * 1984-12-03 1986-06-20 Showa Alum Corp ａ−Ｓｉ太陽電池用基板
JPH01125530U (ja) * 1988-05-12 1989-08-28
US6720576B1 (en) 1992-09-11 2004-04-13 Semiconductor Energy Laboratory Co., Ltd. Plasma processing method and photoelectric conversion device
JP5076172B2 (ja) * 2002-05-24 2012-11-21 スリーディー システムズ インコーポレーテッド 噴射可能な組成物

Families Citing this family (117)

* Cited by examiner, † Cited by third party
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US5091334A (en) * 1980-03-03 1992-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JPS5713777A (en) 1980-06-30 1982-01-23 Shunpei Yamazaki Semiconductor device and manufacture thereof
US4677738A (en) * 1980-05-19 1987-07-07 Energy Conversion Devices, Inc. Method of making a photovoltaic panel
US5859443A (en) * 1980-06-30 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6900463B1 (en) 1980-06-30 2005-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US5262350A (en) * 1980-06-30 1993-11-16 Semiconductor Energy Laboratory Co., Ltd. Forming a non single crystal semiconductor layer by using an electric current
US4542711A (en) * 1981-03-16 1985-09-24 Sovonics Solar Systems Continuous system for depositing amorphous semiconductor material
DE3280293D1 (de) * 1981-11-04 1991-02-21 Kanegafuchi Chemical Ind Biegsame photovoltaische einrichtung.
JPS58169980A (ja) * 1982-03-19 1983-10-06 Matsushita Electric Ind Co Ltd 光起電力素子の製造方法
US4485125A (en) * 1982-03-19 1984-11-27 Energy Conversion Devices, Inc. Method for continuously producing tandem amorphous photovoltaic cells
US4462332A (en) * 1982-04-29 1984-07-31 Energy Conversion Devices, Inc. Magnetic gas gate
JPS5961077A (ja) * 1982-09-29 1984-04-07 Nippon Denso Co Ltd アモルフアスシリコン太陽電池
US4443652A (en) * 1982-11-09 1984-04-17 Energy Conversion Devices, Inc. Electrically interconnected large area photovoltaic cells and method of producing said cells
AU562641B2 (en) 1983-01-18 1987-06-18 Energy Conversion Devices Inc. Electronic matrix array
DE3400843A1 (de) * 1983-10-29 1985-07-18 VEGLA Vereinigte Glaswerke GmbH, 5100 Aachen Verfahren zum herstellen von autoglasscheiben mit streifenfoermigen blendschutzfiltern durch bedampfen oder sputtern, und vorrichtung zur durchfuehrung des verfahrens
US4514583A (en) * 1983-11-07 1985-04-30 Energy Conversion Devices, Inc. Substrate for photovoltaic devices
US4634605A (en) * 1984-05-23 1987-01-06 Wiesmann Harold J Method for the indirect deposition of amorphous silicon and polycrystalline silicone and alloys thereof
JPS6179548U (ja) * 1984-10-31 1986-05-27
US4609771A (en) * 1984-11-02 1986-09-02 Sovonics Solar Systems Tandem junction solar cell devices incorporating improved microcrystalline p-doped semiconductor alloy material
US4566403A (en) * 1985-01-30 1986-01-28 Sovonics Solar Systems Apparatus for microwave glow discharge deposition
FR2581781B1 (fr) * 1985-05-07 1987-06-12 Thomson Csf Elements de commande non lineaire pour ecran plat de visualisation electrooptique et son procede de fabrication
US4664951A (en) * 1985-07-31 1987-05-12 Energy Conversion Devices, Inc. Method provided for corrective lateral displacement of a longitudinally moving web held in a planar configuration
JPS6292485A (ja) * 1985-10-18 1987-04-27 Sanyo Electric Co Ltd 太陽電池の製造方法
FR2593343B1 (fr) * 1986-01-20 1988-03-25 Thomson Csf Matrice d'elements photosensibles et son procede de fabrication, procede de lecture associe, et application de cette matrice a la prise de vue d'images
JPH0744286B2 (ja) * 1986-03-04 1995-05-15 三菱電機株式会社 非晶質光発電素子モジュールの製造方法
US4874631A (en) * 1986-06-23 1989-10-17 Minnesota Mining And Manufacturing Company Multi-chamber deposition system
US4841908A (en) * 1986-06-23 1989-06-27 Minnesota Mining And Manufacturing Company Multi-chamber deposition system
IL82673A0 (en) * 1986-06-23 1987-11-30 Minnesota Mining & Mfg Multi-chamber depositions system
US5031571A (en) * 1988-02-01 1991-07-16 Mitsui Toatsu Chemicals, Inc. Apparatus for forming a thin film on a substrate
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US5001939A (en) * 1988-08-04 1991-03-26 Minnesota Mining And Manufacturing Co. Surface characterization apparatus and method
US5053625A (en) * 1988-08-04 1991-10-01 Minnesota Mining And Manufacturing Company Surface characterization apparatus and method
JPH02235327A (ja) * 1989-03-08 1990-09-18 Fujitsu Ltd 半導体成長装置および半導体成長方法
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DE3119481A1 (de) 1982-01-28
ES512728A0 (es) 1983-06-01
AU3487584A (en) 1985-03-07
JPS6122622A (ja) 1986-01-31
IN155670B (ja) 1985-02-23
ZA813076B (en) 1982-05-26
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JPS57122581A (en) 1982-07-30
ES8207658A1 (es) 1982-10-01
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IT1135827B (it) 1986-08-27
GB2147316A (en) 1985-05-09
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KR860001475A (ko) 1986-02-26
DE3153270C2 (de) 1986-03-27
JPH0461510B2 (ja) 1992-10-01
AU542845B2 (en) 1985-03-21
MX155307A (es) 1988-02-16
DE3153269A1 (ja) 1985-06-13
ES8306923A1 (es) 1983-06-01
GB8323742D0 (en) 1983-10-05
BR8103030A (pt) 1982-02-09
KR840000756B1 (ko) 1984-05-31
KR860001476A (ko) 1986-02-26
JPS6243554B2 (ja) 1987-09-14
PH18408A (en) 1985-06-24
JPS61287176A (ja) 1986-12-17
SE8103043L (sv) 1981-11-20
IE811099L (en) 1981-11-19
FR2482786B1 (fr) 1986-03-07
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GB2076433B (en) 1985-06-12
SE456380B (sv) 1988-09-26
ES8306921A1 (es) 1983-06-01
AU3487484A (en) 1985-03-07
GB2146045B (en) 1985-09-25
JPH0355977B2 (ja) 1991-08-27
JP2539916B2 (ja) 1996-10-02
GB8323741D0 (en) 1983-10-05
IL62883A0 (en) 1981-07-31
AU556596B2 (en) 1986-11-13
GB2147316B (en) 1985-10-30
JPH02168676A (ja) 1990-06-28
KR890003498B1 (ko) 1989-09-22
DE3119481C2 (de) 1986-01-02
GB2146045A (en) 1985-04-11
IE52688B1 (en) 1988-01-20
FR2482786A1 (fr) 1981-11-20
IT8121753A0 (it) 1981-05-15
JPS6236633B2 (ja) 1987-08-07
IL62883A (en) 1984-11-30
KR890003499B1 (ko) 1989-09-22

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