JP5677711B2 - 高性能金属酸化物及び金属酸窒化物薄膜トランジスタを作るためのゲート誘電体の処理 - Google Patents
高性能金属酸化物及び金属酸窒化物薄膜トランジスタを作るためのゲート誘電体の処理 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims description 8
- 229910052751 metal Inorganic materials 0.000 title description 7
- 239000002184 metal Substances 0.000 title description 7
- 229910044991 metal oxide Inorganic materials 0.000 title description 6
- 150000004706 metal oxides Chemical class 0.000 title description 6
- 239000003989 dielectric material Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 claims description 84
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 53
- 238000000151 deposition Methods 0.000 claims description 52
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 51
- 229910052760 oxygen Inorganic materials 0.000 claims description 48
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 45
- 239000001301 oxygen Substances 0.000 claims description 45
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 36
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 30
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 24
- 229910052718 tin Inorganic materials 0.000 claims description 19
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 18
- 229910052738 indium Inorganic materials 0.000 claims description 18
- 229910052757 nitrogen Inorganic materials 0.000 claims description 18
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 17
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 17
- 229910052793 cadmium Inorganic materials 0.000 claims description 17
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 17
- 230000008021 deposition Effects 0.000 claims description 17
- 229910052733 gallium Inorganic materials 0.000 claims description 17
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 17
- 229910052725 zinc Inorganic materials 0.000 claims description 17
- 239000011701 zinc Substances 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000004544 sputter deposition Methods 0.000 claims description 9
- -1 further Chemical compound 0.000 claims description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 7
- 239000001257 hydrogen Substances 0.000 claims 7
- 229910052739 hydrogen Inorganic materials 0.000 claims 7
- 229910021529 ammonia Inorganic materials 0.000 claims 6
- 238000011065 in-situ storage Methods 0.000 claims 3
- 239000010410 layer Substances 0.000 description 171
- 239000007789 gas Substances 0.000 description 31
- 239000000463 material Substances 0.000 description 15
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 14
- 230000000694 effects Effects 0.000 description 14
- 238000009832 plasma treatment Methods 0.000 description 14
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 238000011282 treatment Methods 0.000 description 8
- 239000011787 zinc oxide Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 6
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000005477 sputtering target Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910007717 ZnSnO Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 101100214488 Solanum lycopersicum TFT2 gene Proteins 0.000 description 1
- 101100214491 Solanum lycopersicum TFT3 gene Proteins 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000011221 initial treatment Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
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- H01L21/02518—Deposited layers
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- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
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- H01L21/02612—Formation types
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
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Description
本発明の実施形態は、概して、薄膜トランジスタ(TFT)を作る方法に関する。
現在、TFTアレイへの関心は特に高く、なぜなら、これらの装置はコンピュータ及びテレビのフラットパネルにしばしば使用される種類のアクティブマトリックス液晶ディスプレイ(LCD)で使用できるからである。LCDには、バックライト照明用の発光ダイオード(LED)も含まれるかもしれない。更に、有機発光ダイオード(OLED)は、アクティブマトリックスディスプレイに使用されてきており、これらのOLEDは、ディスプレイの動作を記述するためにTFTが必要である。
Claims (15)
- 薄膜トランジスタの製造方法であって、
ゲート電極及び基板の上にゲート誘電体層を堆積するステップと、
前記ゲート誘電体層を酸素含有プラズマに曝露するステップと、
前記ゲート誘電体層を水素プラズマ又はアンモニアプラズマに曝露するステップと、
前記ゲート誘電体層の上に酸窒化物半導体層を堆積するステップであって、前記半導体層は、酸素と窒素とを含み、更に、亜鉛、ガリウム、インジウム、カドミウム、スズ、及びそれらの組み合わせから成る群から選択される1以上の元素を含むステップと、
前記半導体層の上に導電層を堆積するステップと、
ソース及びドレイン電極及びアクティブチャネルを画定するために前記導電層をエッチングするステップとを含み、前記アクティブチャネルは前記半導体層の一部を露出する方法。 - 前記ゲート誘電体層は、窒化珪素、酸化珪素、又は窒化珪素と酸化珪素の二重層を含む請求項1記載の方法。
- 前記ゲート誘電体層を水素プラズマ又はアンモニアプラズマに曝露するステップは、前記ゲート誘電体を前記酸素含有プラズマに曝露した後に、前記ゲート誘電体層を水素プラズマに曝露するステップを含む請求項1記載の方法。
- 前記半導体層はスパッタリングによって堆積され、前記曝露はゲート誘電体層の堆積と共にインサイチューで実行され、前記酸素含有プラズマはN2Oを含む請求項1記載の方法。
- 薄膜トランジスタの製造方法であって、
ゲート電極及び基板の上に窒化珪素層を堆積するステップと、
前記窒化珪素層の上に酸化珪素層を堆積するステップと、
前記酸化珪素層を酸素含有プラズマに曝露するステップと、
前記酸化珪素層を水素プラズマ又はアンモニアプラズマに曝露するステップと、
前記酸化珪素層の上に酸窒化物半導体層を堆積するステップであって、前記半導体層は、酸素と窒素とを含み、更に、亜鉛、ガリウム、インジウム、カドミウム、スズ、及びそれらの組み合わせから成る群から選択される1以上の元素を含むステップと、
前記半導体層の上に導電層を堆積するステップと、
ソース及びドレイン電極及びアクティブチャネルを画定するために前記導電層をエッチングするステップとを含み、前記アクティブチャネルは前記半導体層の一部を露出する方法。 - 前記酸素含有プラズマは、N2Oプラズマである請求項5記載の方法。
- 前記曝露は前記酸化珪素層の堆積と共にインサイチューで行う請求項5記載の方法。
- 薄膜トランジスタの製造方法であって、
ゲート電極及び基板の上に窒化珪素層を堆積するステップと、
前記窒化珪素層の上に酸化珪素層を堆積するステップと、
前記酸化珪素層をN2Oプラズマに曝露するステップと、
N2Oプラズマに曝露した後で、前記酸化珪素層を酸素プラズマに曝露するステップと、
前記酸化珪素層の上に酸窒化物半導体層を堆積するステップであって、前記半導体層は、酸素と窒素とを含み、更に、亜鉛、ガリウム、インジウム、カドミウム、スズ、及びそれらの組み合わせから成る群から選択される1以上の元素を含むステップと、
前記半導体層の上に導電層を堆積するステップと、
ソース及びドレイン電極及びアクティブチャネルを画定するために前記導電層をエッチングするステップとを含み、前記アクティブチャネルは前記半導体層の一部を露出する方法。 - 前記半導体層はスパッタリングによって堆積される請求項5記載の方法。
- 薄膜トランジスタの製造方法であって、
ゲート電極及び基板の上に酸化珪素層を堆積するステップと、
前記酸化珪素層を酸素含有プラズマに曝露するステップと、
前記酸化珪素層を水素プラズマ又はアンモニアプラズマに曝露するステップと、
前記酸化珪素層の上に酸窒化物半導体層を堆積するステップであって、前記半導体層は、酸素と窒素とを含み、更に、亜鉛、ガリウム、インジウム、カドミウム、スズ、及びそれらの組み合わせから成る群から選択される1以上の元素を含むステップと、
前記半導体層の上に導電層を堆積するステップと、
ソース及びドレイン電極及びアクティブチャネルを画定するために前記導電層をエッチングするステップとを含み、前記アクティブチャネルは前記半導体層の一部を露出する方法。 - 酸素含有プラズマは、N2Oプラズマであり、
前記酸化珪素層をN2Oプラズマに曝露した後に、前記酸化珪素層を水素プラズマ又はアンモニアプラズマに曝露するステップであって、前記半導体層はスパッタリングによって堆積されるステップを含む請求項10記載の方法。 - 前記酸素含有プラズマは、N2Oプラズマであり、
前記酸化珪素層のN 2 Oプラズマへの前記曝露は前記酸化珪素層の堆積と共にインサイチューで行い、前記半導体層はスパッタリングによって堆積される請求項10記載の方法。 - 薄膜トランジスタの製造方法であって、
ゲート電極及び基板の上に窒化珪素層を堆積するステップと、
前記酸化珪素層をN2Oプラズマに曝露するステップと、
N2Oプラズマに曝露した後で、前記酸化珪素層を酸素プラズマに曝露するステップであって、前記半導体層はスパッタリングによって堆積されるステップと、
前記酸化珪素層の上に酸窒化物半導体層を堆積するステップであって、前記半導体層は、酸素と窒素とを含み、更に、亜鉛、ガリウム、インジウム、カドミウム、スズ、及びそれらの組み合わせから成る群から選択される1以上の元素を含むステップと、
前記半導体層の上に導電層を堆積するステップと、
ソース及びドレイン電極及びアクティブチャネルを画定するために前記導電層をエッチングするステップとを含み、前記アクティブチャネルは前記半導体層の一部を露出する方法。 - 薄膜トランジスタであって、
ゲート電極及び基板の上に配置された酸化珪素層であって、前記酸化珪素層を酸素含有プラズマに曝露した後に、水素プラズマ又はアンモニアプラズマで処理された酸化珪素層と、
前記酸化珪素層の上に配置された酸窒化物半導体層とを含み、前記半導体層は、酸素と窒素とを含み、更に、亜鉛、ガリウム、インジウム、カドミウム、スズ、及びそれらの組み合わせから成る群から選択される1以上の元素を含み、
前記トランジスタは、前記半導体層の上に配置されたソース電極及びドレイン電極を更に含み、前記ソース及びドレイン電極は、前記半導体層の一部を露出させるために互いに空間を隔てているトランジスタ。 - 前記ゲート電極及び基板の上、及び前記酸化珪素層の下に配置された窒化珪素層を更に含む請求項14記載のトランジスタ。
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