JP5500732B2 - 発光ダイオードパッケージ構造及びその製造方法 - Google Patents
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H10H20/80—Constructional details
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- H10H20/851—Wavelength conversion means
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- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
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Description
本願は、2010年9月30日出願の台湾・中華民国出願099133380号明細書"発光ダイオードパッケージ構造及びその製造方法"の優先権を主張するものであり、前記出願の内容は、参照により本明細書に組み込まれる。
蛍光基質の第1面から突出する複数の導電柱を形成するべく、複数の貫通孔を電気めっきし、蛍光基質の第1面と同一平面に導電部材が設けられるように、導電柱を研磨することによって、複数の導電部材を形成してもよい。一実施形態において、研磨は、研磨装置を使用して、蛍光基質の厚みを低減し、導電部材を露出させるべく、蛍光基質を削り取ることを含む。
Claims (10)
- 第1面、及び前記第1面と対向する第2面を有し、蛍光材料及びガラス材料を含む蛍光基質と、
前記蛍光基質の前記第1面に設けられる第1導電パターンと、
前記蛍光基質の前記第2面に設けられる第2導電パターンと、
前記蛍光基質を貫通して、前記第1導電パターンと前記第2導電パターンとを接続する少なくとも1つの導電部材と、
前記第2導電パターンと接続された光取り出し面を有し、前記蛍光基質の前記第2面に設けられる発光ダイオード(LED)チップと、
前記LEDチップの側面を覆わないように、前記LEDチップの前記光取り出し面と前記蛍光基質の前記第2面との間に配置されたアンダーフィルと
を備え、
前記LEDチップは、前記少なくとも1つの導電部材を介して前記第1導電パターンと電気的に接続される、LEDパッケージ構造。 - 前記蛍光基質の厚みは、前記蛍光基質全体にわたって一定である請求項1に記載のLEDパッケージ構造。
- 前記蛍光材料は、黄色蛍光物質、又は、少なくとも2つの異なる波長の蛍光物質を含む請求項1または2に記載のLEDパッケージ構造。
- 前記蛍光物質は、少なくとも2つの異なる波長を含む場合、黄色蛍光物質、赤色蛍光物質及び緑色蛍光物質のうちの少なくとも2つを含む請求項3に記載のLEDパッケージ構造。
- 回路基板を更に備え、
前記光取り出し面に対向する前記LEDチップの背面は、前記回路基板上に配置される請求項1から4の何れか1項に記載のLEDパッケージ構造。 - 第1面、及び前記第1面と対向する第2面を有し、少なくとも1つの蛍光材料とガラス材料との混合物を含み、前記第1面と前記第2面とを接続する複数の導電部材が形成される蛍光基質を設ける工程と、
前記第1面に第1導電パターンを、前記第2面に第2導電パターンを形成する工程と、
複数の発光ダイオード(LED)チップを、前記蛍光基質の前記第2面上にボンディングする工程と、
前記蛍光基質の前記第2面に前記複数のLEDチップをボンディングした後に、前記複数のLEDチップの側面を覆わないよう、前記複数のLEDチップの前記光取り出し面と前記蛍光基質の前記第2面との間に、アンダーフィルを形成する工程と
を備え、
前記複数の導電部材の少なくとも一部は、前記第1導電パターンと前記第2導電パターンとを接続し、
前記複数のLEDチップのそれぞれは、前記第2導電パターンと接続された対応する光取り出し面を有し、前記複数の導電部材の対応する1つを介して前記第1導電パターンと電気的に接続されている、LEDパッケージ構造の製造方法。 - 前記第1面と前記第2面とを接続する複数の貫通孔を前記蛍光基質に形成し、
前記蛍光基質の前記第1面から突出する複数の導電柱を形成するべく、前記複数の貫通孔を電気めっきし、
前記蛍光基質の前記第1面と同一平面に前記複数の導電部材が設けられるように、前記複数の導電柱を研磨することによって、前記複数の導電部材が形成される請求項6に記載のLEDパッケージの製造方法。 - 前記研磨は、研磨装置を使用して、前記蛍光基質の厚みを低減し、前記複数の導電部材を露出させるべく、前記蛍光基質を削り取ることを含む請求項7に記載のLEDパッケージの製造方法。
- 支持基板の凹部に、複数の導電バンプを形成し、
前記複数の導電バンプを覆うように、前記支持基板の凹部に、前記少なくとも1つの蛍光材料と前記ガラス材料とを満たし、
前記複数の導電バンプ、前記少なくとも1つの蛍光材料及び前記ガラス材料を一緒に加熱して、前記蛍光基質に前記複数の導電バンプが埋め込まれるように前記蛍光基質を形成し、
前記蛍光基質の前記第1面と同一平面に前記複数の導電部材が設けられるように、前記蛍光基質及び前記複数の導電バンプを研磨することによって、前記複数の導電部材が形成される請求項6から8の何れか1項に記載のLEDパッケージの製造方法。 - 前記アンダーフィルを形成する工程の後に、複数のLEDパッケージ構造を形成する切断工程を実行する工程を更に備える請求項6から9の何れか1項に記載のLEDパッケージの製造方法。
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KR101983774B1 (ko) * | 2012-09-20 | 2019-05-29 | 엘지이노텍 주식회사 | 발광 소자 |
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- 2011-05-26 EP EP11167682.1A patent/EP2437321A3/en not_active Withdrawn
- 2011-05-27 US US13/118,007 patent/US8772807B2/en not_active Expired - Fee Related
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US10361351B2 (en) | 2017-08-22 | 2019-07-23 | Samsung Electronics Co., Ltd. | Semiconductor light emitting element package including solder bump |
Also Published As
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TW201214786A (en) | 2012-04-01 |
US20120080702A1 (en) | 2012-04-05 |
US20120080703A1 (en) | 2012-04-05 |
EP2437321A3 (en) | 2014-08-06 |
EP2437321A2 (en) | 2012-04-04 |
CN102447046A (zh) | 2012-05-09 |
TWI446590B (zh) | 2014-07-21 |
US8772807B2 (en) | 2014-07-08 |
CN102447046B (zh) | 2014-10-22 |
US8796713B2 (en) | 2014-08-05 |
JP2012080070A (ja) | 2012-04-19 |
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