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CN113366616B - 热增强型封装和其制作过程 - Google Patents

热增强型封装和其制作过程 Download PDF

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Publication number
CN113366616B
CN113366616B CN201980090320.1A CN201980090320A CN113366616B CN 113366616 B CN113366616 B CN 113366616B CN 201980090320 A CN201980090320 A CN 201980090320A CN 113366616 B CN113366616 B CN 113366616B
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China
Prior art keywords
carrier
top surface
thinned die
molding compound
heat remover
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CN201980090320.1A
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CN113366616A (zh
Inventor
朱利奥·C·科斯塔
乔治·马克西姆
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Qorvo US Inc
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Qorvo US Inc
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Priority to CN202410364357.1A priority Critical patent/CN118263134A/zh
Publication of CN113366616A publication Critical patent/CN113366616A/zh
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Abstract

一种热增强型封装包含载体、所述载体之上的经减薄管芯、模制化合物以及除热器。所述经减薄管芯包含所述载体之上的装置层和所述装置层之上的介电层。所述模制化合物位于所述载体之上、围绕所述经减薄管芯并且延伸到所述经减薄管芯的顶表面之外以在所述模制化合物内和所述经减薄管芯之上限定开口。所述经减薄管芯的所述顶表面处于所述开口的底部处。所述除热器的至少一部分插入到所述开口中并且与所述经减薄管芯热接触。在本文中，所述除热器由金属或合金形成。

Description

热增强型封装和其制作过程
技术领域
本公开涉及一种封装和其制作过程，并且更具体地涉及热增强型封装和将至少一个除热器应用到封装中以获得增强的热性能的过程。
背景技术
随着当前便携式通信装置的普及和制造技术的发展，高速和高性能晶体管更密集地集成在装置模块上。因此，由于大量晶体管集成在装置模块上，大量功率穿过晶体管以及晶体管的高操作速度，由装置模块产生的热量将显著增加。因此，期望以用于实现更好的热管理的配置封装装置模块。
常规地，这些高功率装置模块可以直接位于散热器之上以用于散热。然而，此类组合件对于低轮廓应用没有吸引力。在一些应用中，散热器可以嵌入在印刷电路板(PCB)中。在高功率装置模块与PCB内的散热器之间需要优良的导热。此外，嵌入在PCB中的散热器可能阻断PCB中的电布线，以确保散热能力。
因此为了适应装置模块发热量的增加，因此本公开的目的是提供具有增强的热性能的改进的封装设计。进一步地，还需要在不增加封装大小或牺牲电性能的情况下增强装置模块的性能。
发明内容
本公开涉及一种热增强型封装和其制作过程。所公开的热增强型封装包含具有顶表面的载体、第一经减薄管芯、第一模制化合物以及第一除热器。所述第一经减薄管芯包含所述载体的所述顶表面之上的第一装置层和所述第一装置层之上的第一介电层。所述第一模制化合物位于所述载体的所述顶表面上、围绕所述第一经减薄管芯并且延伸到所述第一经减薄管芯的顶表面之外以在所述第一模制化合物内和所述第一经减薄管芯之上限定第一开口。在本文中，所述第一模制化合物不位于所述第一经减薄管芯之上并且提供所述第一开口的竖直壁，所述竖直壁在X方向和Y方向两者上与所述第一经减薄管芯的边缘对齐。所述X方向和所述Y方向平行于所述载体的所述顶表面，并且所述X方向和所述Y方向彼此正交。所述第一经减薄管芯的所述顶表面处于所述第一开口的底部处。另外，所述第一除热器的至少一部分插入到所述第一开口中并且与所述第一经减薄管芯热接触。所述第一除热器由金属或合金形成。
在热增强型封装的一个实施例中，所述第一介电层的顶表面是所述第一经减薄管芯的所述顶表面。
在热增强型封装的一个实施例中，所述第一除热器通过附接层附接到所述第一经减薄管芯，所述附接层由导热环氧树脂、导热硅酮或氧化铝热粘合剂形成。
在热增强型封装的一个实施例中，所述第一除热器的X方向尺寸和Y方向尺寸两者与所述第一经减薄管芯的X方向尺寸和Y方向尺寸基本上相同。
在热增强型封装的一个实施例中，所述第一除热器完全填充所述第一开口。所述第一除热器的顶表面和所述第一模制化合物的顶表面基本上处于同一平面。
在热增强型封装的一个实施例中，所述第一除热器的所述顶表面低于所述第一模制化合物的所述顶表面。
根据另一个实施例，所述热增强型封装进一步包含第二除热器。在本文中，所述第二除热器的至少一部分插入在所述第一开口中并且处于所述第一除热器之上。所述第二除热器、所述第一除热器和所述第一经减薄管芯热连接。
在热增强型封装的一个实施例中，所述第二除热器通过附接层附接到所述第一除热器，所述附接层由导热环氧树脂、导热硅酮或氧化铝热粘合剂形成。
在热增强型封装的一个实施例中，所述第一经减薄管芯进一步包含多个互连件，所述多个互连件从所述第一装置层的底表面延伸到所述载体的所述顶表面。
根据另一个实施例，所述热增强型封装进一步包含底部填充层，所述底部填充层位于所述第一模制化合物与所述载体的所述顶表面之间并且在所述第一装置层的所述底表面与所述载体的所述顶表面之间对所述第一经减薄管芯进行底部填充。所述底部填充层由与所述第一模制化合物相同的材料形成。
在热增强型封装的一个实施例中，所述载体包含所述载体的底表面处的多个天线贴片。每个天线贴片电连接到对应互连件。
在热增强型封装的一个实施例中，所述载体是以下之一：层压载体、晶圆级扇出型(WLFO)载体、晶圆级扇入型(WLFI)载体、引线框架和陶瓷载体。
根据另一个实施例，热增强型封装进一步包含第二经减薄管芯，所述第二经减薄管芯具有所述载体的所述顶表面之上的第二装置层和所述第二装置层之上的第二介电层。在本文中，所述第一模制化合物围绕所述第二经减薄管芯并且延伸到所述第二经减薄管芯的顶表面之外以在所述第一模制化合物内和所述第二经减薄管芯之上限定第二开口。所述第一模制化合物不位于所述第二经减薄管芯之上并且提供所述第一开口的竖直壁，所述竖直壁在所述X方向和所述Y方向两者上与所述第二经减薄管芯的边缘对齐。所述第二经减薄管芯的所述顶表面处于所述第二开口的底部处。所述第一除热器的第一部分插入在所述第一开口中并且与所述第一经减薄管芯热接触，并且所述第一除热器的第二部分插入在所述第二开口中并且与所述第二经减薄管芯热接触。所述第一除热器具有多指梳状结构。
在热增强型封装的一个实施例中，所述载体包含所述载体的所述顶表面处的多个载体触点。每个互连件电连接到对应载体触点。
根据另一个实施例，所述热增强型封装进一步包含至少一个模穿孔(throughmold via，TMV)，所述至少一个模穿孔通过对应载体触点电连接到所述第一经减薄管芯并且从所述第一模制化合物的底表面延伸穿过所述第一模制化合物到达所述第一模制化合物的顶表面。
根据另一个实施例，所述热增强型封装包含在系统组合件中。除了热增强型封装之外，系统组合件进一步包含具有位于印刷电路板(PCB)的底表面上的至少一个板触点的PCB。在本文中，所述PCB的所述底表面位于所述第一模制化合物的所述顶表面之上，并且所述至少一个TMV通过至少一个焊盘或至少一个焊球电连接到所述至少一个板触点。
在系统组合件的一个实施例中，PCB进一步包含PCB的底表面上的散热器结构。散热器结构与热增强型封装中的第一除热器热接触。
根据另一个实施例，所述热增强型封装进一步包含第二模制化合物，所述第二模制化合物形成于所述第一模制化合物之上并且包封所述第一除热器。在本文中，至少一个TMV延伸穿过第一模制化合物和第二模制化合物。至少一个焊盘或至少一个焊球形成于所述第二模制化合物之上并且电连接到所述至少一个TMV。
根据示例性过程，提供了前体封装，所述前体封装包含载体、附接到载体的顶表面的第一管芯以及第一模制化合物。第一模制化合物形成于载体的顶表面之上并且包封第一管芯。在本文中，第一管芯包含第一装置层、第一装置层之上的第一介电层以及第一介电层之上的第一管芯衬底。然后将第一模制化合物减薄以暴露第一管芯衬底的背面。接下来，去除整个第一管芯衬底以在第一模制化合物内产生第一开口并且提供第一经减薄管芯。所述第一开口形成于所述第一经减薄管芯之上，并且所述第一经减薄管芯的顶表面处于所述第一开口的底部处。最后，将由金属形成的除热器的至少一部分插入到第一开口中，使得除热器与第一经减薄管芯热接触。
本领域的技术人员将在结合附图阅读优选实施例的以下详细描述之后了解本公开的范围并且认识到本公开的另外的方面。
附图说明
并入本说明书中并且形成本说明书的一部分的附图展示了本公开的若干方面，并且与说明书一起用于解释本公开的原理。
图1示出了根据本公开的一个实施例的示例性热增强型封装。
图2至图8示出了根据本公开的一个实施例的替代性热增强型封装。
图9A至图9E提供了展示用于制造图1所示的示例性热增强型封装的过程的示例性步骤。
应当理解，为了清楚说明，图1至图9E可以不按比例绘制。
具体实施方式
下文阐述的实施例表示使本领域的技术人员能够实践实施例的必要信息，并且展示了实践实施例的最佳方式。在根据附图阅读以下说明时，本领域的技术人员将理解本公开的概念并且将认识到本文中未特别提出的这些概念的应用。应当理解，这些概念和应用落入本公开和所附权利要求的范围内。
应当理解，尽管本文中可以使用术语第一、第二等来描述各种元件，但是这些元件不应受到这些术语的限制。这些术语仅用于将一个元件与另一个元件相区分。例如，在不偏离本公开的范围的情况下，第一元件可以被称为第二元件，并且类似地，第二元件可以被称为第一元件。如本文所使用的，术语“和/或”包含相关联列举项中的一个或多个的任何组合和全部组合。
应当理解，当如层、区域或衬底等元件被称为“在另一个元件上”或延伸“到另一个元件上”时，其可以直接在其它元件上或直接延伸到其它元件上或者还可以存在中间元件。相比之下，当元件被称为“直接地在另一个元件上”或“直接地延伸到另一个元件上”时，不存在中间元件。同样，应当理解，当如层、区域或衬底等元件被称为“在另一个元件之上”或“在另一个元件之上”延伸时，其可以直接在另一个元件之上或直接在另一个元件之上延伸，或者还可以存在中间元件。相比之下，当元件被称为“直接在另一个元件之上”或“直接在另一个元件之上延伸”时，不存在中间元件。还应当理解，当元件被称为“连接”或“耦接”到另一个元件时，其可以直接地连接或耦接到其它元件，或者可以存在中间元件。相比之下，当元件被称为“直接地连接”或“直接地耦接”到另一个元件时，不存在中间元件。
如“下方”或“上方”或“上部”或“下部”或“水平”或“竖直”等相对术语可以在本文中用于描述如图所示的一个元件、层或区域与另一个元件、层或区域的关系。应当理解，除了附图中描绘的朝向之外，这些术语和上文所讨论的那些术语旨在涵盖装置的不同朝向。
本文所使用的术语仅出于描述特定实施例的目的并且不旨在限制本公开。如本文所使用的，单数形式“一个(a)”、“一种(an)”和“所述(the)”旨在同样包含复数形式，除非上下文另有明确指示。应进一步理解，当在本文中使用时，术语“包括(comprises)”、“包括(comprising)”、“包含(includes)”和/或“包含(including)”指定所陈述的特征、整体、步骤、操作、元件和/或组件的存在，但不排除一个或多个其它特征、整体、步骤、操作、元件、组件和/或其组合的存在或添加。
除非另外限定，否则本文所使用的所有术语(包含技术术语和科技术语)具有本公开所属领域的普通技术人员通常所理解的相同含义。应进一步理解的是，本文所使用的术语应被解释为具有与其在本说明书和相关领域的上下文中的含义一致的含义，并且除非本文中明确地如此定义，否则将不会在理想化的或过度正式的意义上进行解释。
本公开涉及一种热增强型封装和其制作过程。图1示出了根据本公开的一个实施例的示例性热增强型封装10。出于这种说明的目的，示例性热增强型封装10包含载体12、第一经减薄管芯14、底部填充层16、第一模制化合物部件18、第一除热器20和第一附接层22。在不同的应用中，热增强型封装10可以包含多个经减薄管芯。
具体地，载体12可以是层压载体、晶圆级扇出型(WLFO)载体、晶圆级扇入型(WLFI)载体、引线框架或陶瓷载体等。载体12包含多个第一载体触点24(为清楚起见，只有一个第一载体触点用附图标记标出)，所述多个第一载体触点形成于载体12的顶表面处并且被配置成电连接到第一经减薄管芯14。第一经减薄管芯14包含第一装置层26、第一装置层26的顶表面之上的第一介电层28以及从第一装置层26的底表面延伸到载体12的顶表面的多个第一互连件30(为清楚起见，只有一个第一互连件用附图标记标出)。在本文中，每个第一互连件30电连接到对应第一载体触点24。厚度介于10nm与20000nm之间的第一装置层26可以由氧化硅、砷化镓、氮化镓、硅锗等形成。厚度介于10nm与20000nm之间的第一介电层28可以由氧化硅、氮化硅或氮化铝等形成。高度介于5μm与200μm之间的第一互连件30可以是铜柱凸点、焊球凸点等。
在一个实施例中，第一经减薄管芯14可以由绝缘体上硅(SOI)结构形成，所述SOI结构是指包含硅衬底、硅外延层和夹置在硅衬底与硅外延层之间的隐埋氧化物(BOX)层的结构。第一经减薄管芯14的第一装置层26通过将电子组件(未示出)集成在SOI结构的硅外延层中或上而形成。第一经减薄管芯14的第一介电层28为SOI结构的BOX层。另外，SOI结构的硅衬底基本上去除以完成第一经减薄管芯14(更多细节在以下讨论中)。在一些应用中，第一经减薄管芯14的顶表面可以是第一介电层28的顶表面。
底部填充层16位于载体12的顶表面上，使得底部填充层16封装第一互连件30并且在第一装置层26的底表面与载体12的顶表面之间对第一经减薄管芯14进行底部填充。底部填充层16可以由常规聚合化合物形成，所述聚合化合物用于减轻由第一经减薄管芯14与载体12之间的热膨胀系数(CTE)不匹配引起的应力效应。
第一模制化合物组件18位于底部填充层16之上、围绕第一经减薄管芯14并且延伸到第一经减薄管芯14的顶表面之外以在第一模制化合物18内和第一经减薄管芯14之上限定第一开口32。第一经减薄管芯14的顶表面处于第一开口32的底部处。在本文中，第一模制化合物18不位于第一经减薄管芯14之上并且在Z方向上提供第一开口32的竖直壁。第一开口32的竖直壁在X方向和Y方向两者上都与第一经减薄管芯14的边缘良好对齐。在本文中，X方向和Y方向平行于载体12的顶表面，并且Z方向垂直于载体12的顶表面。X方向、Y方向和Z方向全部彼此正交。第一模制化合物18可以由与底部填充层16相同或不同的材料形成。当第一模制化合物18和底部填充层16由相同的材料形成时，第一模制化合物18和底部填充层16可以同时形成。用于形成第一模制化合物18的一种示例性材料是有机环氧树脂体系。
另外，第一除热器20的至少一部分插入到第一开口32中并且通过第一附接层22附接到第一经减薄管芯14的顶表面。第一除热器20可以是具有很大的热辐射面积的金属块。第一除热器20可以由铜、铝/铝合金、黄铜或具有高导热性的其它金属或合金形成。第一附接层22可以由热粘合剂或热油脂形成，如导热环氧树脂、导热硅酮、氧化铝热粘合剂或可以介于第一经减薄管芯14与第一除热器20之间的热界面中间的其它材料。第一附接层22的各种粘度、硬度和固化速度规格是可用的。如此，第一除热器20与第一经减薄管芯14热接触并且被配置成吸收从第一经减薄管芯14产生的热量。出于这种说明的目的，第一除热器20的X方向尺寸和Y方向尺寸两者与第一经减薄管芯14的X方向尺寸和Y方向尺寸基本上相同，并且第一除热器20的厚度(在Z方向尺寸上)与第一开口32的深度基本上相同。在本文中，基本上相同是指介于95％与100％之间。具体地，第一除热器20的X方向尺寸可以介于第一经减薄管芯14的X方向尺寸的95％与100％之间，并且第一除热器20的Y方向尺寸可以介于第一减薄14的Y方向尺寸的95％与100％之间。如此，第一除热器20完全填充第一开口32，并且第一除热器20的顶表面和第一模制化合物18的顶表面基本上处于同一平面。在不同的应用中，第一除热器20的厚度可以不同于第一开口32的深度，使得第一除热器20的顶表面可以低于或高于第一模制化合物18的顶表面(此处未示出)。
在第一除热器20的厚度比第一开口32的深度短的这些情况下，热增强型封装10可以进一步包含第二除热器34和第二附接层36，如图2所示。在本文中，第一除热器20位于第一开口32的下部区域内，并且第二除热器34的至少一部分插入到第一开口32的上部区域中并且通过第二附接层36附接到第一除热器20的顶表面。第二除热器34可以是具有很大的热辐射面积的金属块。第二除热器34可以由铜、铝/铝合金、黄铜或具有高导热性的其它金属或合金形成。第二附接层36可以由热粘合剂或热油脂形成，如导热环氧树脂、导热硅酮、氧化铝热粘合剂或可以介于第一除热器20与第二除热器34之间的热界面中间的其它材料。第二附接层36的各种粘度、硬度和固化速度规格是可用的。在本文中，第二除热器34、第一除热器20和第一经减薄管芯14热连接。第一除热器20和第二除热器34的组合被配置成吸收从第一经减薄管芯14产生的热量。出于说明的目的，第二除热器36的X方向尺寸和Y方向尺寸两者与第一经减薄管芯14的X方向尺寸和Y方向尺寸基本上相同。第一除热器20和第二除热器36的组合厚度与第一开口32的深度基本上相同。如此，第二除热器34的顶表面和第一模制化合物18的顶表面基本上处于同一平面。
在一些应用中，热增强型封装10包含多个经减薄管芯，如图3所示。在本文中，除了第一经减薄管芯14外，热增强型封装10还包含第二经减薄管芯38。第二经减薄管芯38包含第二装置层40、第二装置层40的顶表面之上的第二介电层42以及从第二装置层40的底表面延伸到载体12的顶表面的多个第二互连件44(为清楚起见，只有一个第二互连件用附图标记标出)。厚度介于10nm与20000nm之间的第二装置层40可以由氧化硅、砷化镓、氮化镓、硅锗等形成。厚度介于10nm与20000nm之间的第二介电层42可以由氧化硅、氮化硅或氮化铝等形成。高度介于5μm与200μm之间的第二互连件44可以是铜柱凸点、焊球凸点等。
底部填充层16包封第二互连件44并且在第二装置层40的底表面与载体12的顶表面之间对第二经减薄管芯38进行底部填充。第一模制化合物18位于底部填充层16之上、围绕第二经减薄管芯38并且延伸到第二经减薄管芯38的顶表面之外以在第一模制化合物18内限定第二开口46。第二开口46位于第二经减薄管芯38之上，并且第二经减薄管芯38的顶表面处于第二开口46的底部处。在本文中，第一模制化合物18不位于第二经减薄管芯38之上并且在Z方向上提供第二开口46的竖直壁。第二开口46的竖直壁在X方向和Y方向两者上都与第二经减薄管芯38的边缘良好对齐。
在此实施例中，第一除热器20-1的第一部分插入在第一开口32中并且与第一经减薄管芯14热接触，并且第一除热器20-2的第二部分插入在第二开口46中并且与第二经减薄管芯38热接触。第一除热器20可以具有“多指梳状结构”(在一些情况下也描述为组合的T形)。应当注意，第一除热器20可以是金属块、金属梳或具有很大的热辐射面积的其它合适的结构。第一除热器20-1的第一部分通过第一附接层22附接到第一经减薄管芯14的顶表面，并且第一除热器20-2的第二部分通过第三附接层48附接到第二经减薄管芯38的顶表面。第三附接层48可以由热粘合剂或热油脂形成，如导热环氧树脂、导热硅酮、氧化铝热粘合剂或可以介于第二经减薄管芯38与第一除热器20-2的第二部分之间的热界面中间的其它材料。第三附接层48的各种粘度、硬度和固化速度规格是可用的。第一除热器20-1的第一部分被配置成吸收从第一经减薄管芯14产生的热量，而第一除热器20-2的第二部分被配置成吸收从第二经减薄管芯38产生的热量。
此外，载体12还包含多个第二载体触点50(为清楚起见，只有一个第二载体触点用附图标记标出)，所述多个第二载体触点形成于载体12的顶表面处并且被配置成电连接到第二经减薄管芯38。每个第二互连件44电连接到对应第二载体触点50。
在一个实施例中，第二经减薄管芯38可以由绝缘体上硅(SOI)结构形成。第二经减薄管芯38的第二装置层40通过将电子组件(未示出)集成在SOI结构的硅外延层中或上而形成。第二经减薄管芯38的第二介电层42为SOI结构的BOX层。另外，SOI结构的硅衬底基本上去除以完成第二经减薄管芯38。在一些应用中，第二经减薄管芯38的顶表面是第二介电层42的顶表面。
在一些应用中，载体12可以进一步包含位于载体12的底表面处的多个天线贴片52以提供天线阵列，如图4所示。在本文中，每个天线贴片52可以通过一个载体通孔54电连接到对应第一载体触点24(为清楚起见，只有一个天线贴片和一个载体通孔用附图标记标出)。因此，每个天线贴片52电连接到第一经减薄管芯14。在载体12的底表面处形成的天线贴片52确保第一经减薄管芯14与天线阵列之间的最小互连长度。天线贴片52可以由金属板形成，所述金属板由铜、铝/铝合金、TLCC材料或具有高导电性以降低插入损耗的其它金属或合金建造。如果载体12是WLFO载体或WLFO载体，则当在载体12中形成重新分布层(RDL)时，可以实现第一载体触点24、载体通孔54和天线贴片52。
图5和6示出了热增强型封装10进一步包含第二模制化合物56以封闭第一除热器20。第二模制化合物56形成于第一模制化合物18和第一开口32之上。不管第一除热器20的厚度如何(第一除热器20的顶表面可以高于、低于第一模制化合物18的顶表面或处于与所述第一模制化合物的顶表面相同的平面水平)，第二模制化合物56都完全包封并直接连接到第一除热器20。第二模制化合物56是高导热性模制化合物。与具有1w/m·k导热性的正常模制化合物相比，高导热性模制化合物的导热性为2.5w/m·k到10w/m·k或更大。第二模制化合物56可以由如PPS(聚苯硫醚)、掺杂有氮化硼或氧化铝热添加剂的包覆模制的环氧树脂等热塑性或热固性材料形成。第二模制化合物56可以由与第一模制化合物18相同或不同的材料形成。然而，与第二模制化合物56不同，第一模制化合物18不具有导热性要求。
另外，热增强型封装10可以进一步包含一个或多个模穿孔(TMV)58，所述一个或多个TMV提供到第一经减薄管芯14的电性连接。每个TMV 58通过对应第一载体触点24电连接到第一经减薄管芯14并且延伸穿过底部填充层16、第一模制化合物18和第二模制化合物56。如果载体12包含天线贴片52，则TMV 58可以电连接到天线贴片52。焊盘60(图5)或焊球62(图6)可以形成于第二模制化合物56之上并且电连接到对应TMV 58。
图7示出了包含热增强型封装10的系统组合件64。在本实施例中，热增强型封装10可以不包含用于包封第一除热器20的第二模制化合物56，使得TMV 58仅延伸穿过底部填充层16和第一模制化合物18。每个焊盘60形成于第一模制化合物18之上并且电连接到对应TMV 58。除了热增强型封装10之外，系统组合件64还包含印刷电路板(PCB)66，所述PCB具有位于PCB 66的底表面处的多个板触点68。PCB 66位于热增强型封装10之上，并且第一模制化合物18上的每个焊盘60电连接到对应板触点68。此外，PCB 66还可以包含位于PCB 66的底表面处的散热器结构70，所述散热器结构通过热附接层72与第一除热器20热接触。热附接层72可以由热粘合剂或热油脂形成，如导热环氧树脂、导热硅酮、氧化铝热粘合剂或可以介于第一除热器20与散热器结构70之间的热界面中间的其它材料。热附接层72的各种粘度、硬度和固化速度规格都是可用的。热附接层72的导热性可以大于0.5w/m·k、或介于1w/m·k与3w/m·k之间。如果PCB 66不包含散热器结构70，则可能不需要将第一除热器20热耦接到PCB 66。在一些应用中，如图8所示，使用焊球62而不是焊盘60将TMV 58电连接到对应板触点68。可以忽略PCB 66中的散热器结构70和热附接层72。
图9A-9E提供了展示用于制造图1所示的示例性热增强型封装10的过程的示例性步骤。尽管示例性步骤以系列展示，但是示例性步骤不一定取决于顺序。一些步骤可能会以不同于所呈现的顺序进行。进一步地，本公开范围内的过程可以包含比图9A-9E所展示的步骤更少或更多的步骤。如果载体12是层压载体，则示例性步骤在模块水平中制造。如果载体12是WLFO载体或WLFI载体，则示例性步骤在晶圆水平中制造。
首先，如图9A所描绘的，提供前体封装74。出于这种说明的目的，前体封装74包含具有第一载体触点24的载体12、第一管芯14D、底部填充层16以及第一模制化合物组件18。在不同的应用中，前体封装74可以包含多个管芯。在本文中，第一管芯14D包含第一装置层26、第一装置层26的顶表面之上的第一介电层28、从第一装置层26的底表面延伸到载体12的顶表面的第一互连件30(为清楚起见，只有一个第一互连件用附图标记标出)以及第一介电层28的顶表面之上的第一管芯衬底76。如此，第一管芯衬底76的背面是第一管芯14D的顶表面。在本文中，第一互连件30中的每个第一互连件电连接到载体12中对应第一载体触点24。
在一个实施例中，第一管芯14D可以由SOI结构形成。第一管芯14D的第一装置层26通过将电子组件(未示出)集成在SOI结构的硅外延层中或上而形成。第一管芯14D的第一介电层28是SOI结构的BOX层。第一管芯14D的第一管芯衬底76是SOI结构的硅衬底。第一管芯14D的厚度分别介于25μm与250μm之间或介于25μm与750μm之间，并且第一管芯衬底76的厚度分别介于25μm与250μm之间或介于25μm与750μm之间。
另外，底部填充层16位于载体12的顶表面上，使得底部填充层16封装第一互连件30并且在第一装置层26的底表面与载体12的顶表面之间对第一管芯14D进行底部填充。第一模制化合物18位于底部填充层16之上并且包封第一管芯14D。在以下步骤中，第一模制化合物18可以用作蚀刻剂阻挡，以保护第一管芯14D免受如氢氧化四甲铵(TMAH)、氢氧化钾(KOH)、氢氧化钠(NaOH)和乙酰胆碱(ACH)等蚀刻化学物质的影响。
接下来，将第一模制化合物18减薄以暴露第一管芯14D的第一管芯衬底76的背面，如图9B所示。减薄程序可以利用机械研磨工艺进行。以下步骤是基本上去除第一管芯14D的第一管芯衬底76，以产生第一开口32并且提供第一经减薄管芯14，如图9C所示。在本文中，基本上去除第一管芯衬底76是指去除整个第一管芯衬底76的至少99％，并且也许是去除第一介电层28的一部分。在期望的情况下，完全去除第一管芯衬底76。如此，第一经减薄管芯14可以是指包含第一装置层26、第一装置层26之上的第一介电层28以及从第一装置层24延伸到载体12的第一互连件30的经减薄管芯。在本文中，第一介电层28的顶表面是第一经减薄管芯14的顶表面并且暴露于第一开口32。基本上去除第一管芯衬底76可以通过利用湿/干蚀刻计化学物质的蚀刻工艺来提供，所述湿/干蚀刻计化学物质可以是TMAH、KOH、ACH、NaOH等。
然后在第一开口32的底部处将第一附接层22施加在第一经减薄管芯14的顶表面之上，如图9D所示。第一附接层22可以通过粗略扩展、平滑扩展或特殊形状应用方法来施加。用于施加第一附接层22的一些典型形状是：中间的圆点、两个米粒状圆点、细线、粗线、多线、螺旋图案、X形、圆形、中间有圆点的圆形等。最后，第一除热器20的至少一部分插入到第一开口32中并且与第一附接层22接触，如图9E所示。如此，第一除热器20与第一经减薄管芯14热接触并且被配置成吸收从第一经减薄管芯14产生的热量。
本领域的技术人员将认识到对本公开的优选实施例的改进和修改。所有此类改进和修改都认为是在本文公开的概念和以下权利要求的范围内。

Claims (15)

1.一种设备，其包括：
●载体，所述载体具有顶表面以及与所述载体的所述顶表面相对的底表面，其中，所述载体包括在所述载体的底表面处的多个天线贴片；
●第一减薄管芯，所述第一减薄管芯包括所述载体的所述顶表面之上的第一装置层和所述第一装置层之上的第一介电层，其中：
●所述第一介电层和所述第一装置层具有相同的平面大小；
●所述第一减薄管芯和所述多个天线贴片位于所述载体的相对侧上；以及●所述第一减薄管芯电连接至所述多个天线贴片中的每一个；
●第一模制化合物，所述第一模制化合物位于所述载体的所述顶表面上、围绕所述第一减薄管芯并且延伸到所述第一减薄管芯的顶表面之外，以在所述第一模制化合物内和所述第一减薄管芯之上限定第一开口，其中：
●所述第一模制化合物不位于所述第一减薄管芯之上，使得所述第一介电层和所述第一装置层不水平延伸到所述第一开口之外；
●所述第一模制化合物提供所述第一开口的竖直壁，所述竖直壁在X方向和Y方向两者上与所述第一减薄管芯的边缘对齐；
●所述X方向和所述Y方向平行于所述载体的所述顶表面，并且所述X方向和所述Y方向彼此正交；并且
●所述第一减薄管芯的所述顶表面是所述第一介电层的顶表面，并且处于所述第一开口的底部处；
●第一除热器，所述第一除热器插入到所述第一开口中并且与所述第一减薄管芯热接触，其中：
●所述第一模制化合物围绕的所述第一除热器不在所述X方向和所述Y方向两者上水平延伸到所述第一减薄管芯之外；并且
●所述第一除热器由金属或合金形成；以及
●第二模制化合物，所述第二模制化合物形成于所述第一模制化合物之上并且包封所述第一除热器，其中：
●所述第一模制化合物、所述第二模制化合物和所述第一除热器由不同的材料形成；并且
●所述第一模制化合物的任何部分都不在第一除热器的顶表面之上。
2.根据权利要求1所述的设备，其中，所述第一除热器通过附接层附接到所述第一减薄管芯，所述附接层由导热环氧树脂、导热硅酮或氧化铝热粘合剂组成的组中的一种形成，其中所述附接层不在所述X方向和所述Y方向两者上水平延伸到所述第一减薄管芯之外。
3.根据权利要求1所述的设备，其中，所述第一除热器的X方向尺寸和Y方向尺寸两者与所述第一减薄管芯的X方向尺寸和Y方向尺寸基本上相同。
4.根据权利要求3所述的设备，其中
●所述第一除热器完全填充所述第一开口；并且
●所述第一除热器的顶表面和所述第一模制化合物的顶表面基本上处于同一平面。
5.一种设备，其包括：
●载体，所述载体具有顶表面；
●第一减薄管芯，所述第一减薄管芯包括所述载体的所述顶表面之上的第一装置层和所述第一装置层之上的第一介电层；
●第一模制化合物，所述第一模制化合物位于所述载体的所述顶表面上、围绕所述第一减薄管芯并且延伸到所述第一减薄管芯的顶表面之外，以在所述第一模制化合物内和所述第一减薄管芯之上限定第一开口，其中：
●所述第一模制化合物不位于所述第一减薄管芯之上，并且提供所述第一开口的竖直壁，所述竖直壁在X方向和Y方向两者上与所述第一减薄管芯的边缘对齐；
●所述X方向和所述Y方向平行于所述载体的所述顶表面，并且所述X方向和所述Y方向彼此正交；并且
●所述第一减薄管芯的所述顶表面处于所述第一开口的底部处；以及
●第一除热器，由金属或合金形成，插入到所述第一开口中，其中，所述第一除热器的顶表面低于所述第一模制化合物的顶表面；
●第二除热器的至少一部分，由金属或合金形成，插入到所述第一开口中并且位于所述第一除热器之上，其中：
●所述第二除热器通过附接层附接到所述第一除热器，所述附接层由导热环氧树脂、导热硅酮或氧化铝热粘合剂组成的组中的一种形成；并且
●所述第一除热器、所述第二除热器和所述第一减薄管芯热连接。
6.根据权利要求1所述的设备，其中，所述第一减薄管芯进一步包括多个互连件，所述多个互连件从所述第一装置层的底表面延伸到所述载体的所述顶表面。
7.根据权利要求6所述的设备，其进一步包括：底部填充层，所述底部填充层位于所述第一模制化合物与所述载体的所述顶表面之间并且在所述第一装置层的所述底表面与所述载体的所述顶表面之间对所述第一减薄管芯进行底部填充。
8.根据权利要求7所述的设备，其中所述底部填充层由与所述第一模制化合物相同的材料形成。
9.根据权利要求6所述的设备，其中，所述多个天线贴片中的每个天线贴片电连接到对应互连件。
10.根据权利要求1所述的设备，其中，所述载体是由以下组成的组中的一种：层压载体、晶圆级扇出型WLFO载体、晶圆级扇入型WLFI载体、引线框架和陶瓷载体。
11.根据权利要求6所述的设备，其中，所述载体包括所述载体的所述顶表面处的多个载体触点，其中所述多个互连件中的每个互连件电连接到所述多个载体触点中的对应载体触点。
12.根据权利要求11所述的设备，进一步包括：至少一个模穿孔TMV，所述至少一个模穿孔通过对应载体触点电连接到所述第一减薄管芯，并且延伸穿过所述第一模制化合物和所述第二模制化合物。
13.一种设备，其包括：
●载体，所述载体具有顶表面以及与所述载体的所述顶表面相对的底表面，其中，所述载体包括在所述载体的底表面处的多个天线贴片；
●第一减薄管芯，所述第一减薄管芯包括所述载体的所述顶表面之上的第一装置层和所述第一装置层之上的第一介电层，其中：
●所述第一介电层和所述第一装置层具有相同的平面大小；
●所述第一减薄管芯和所述多个天线贴片位于所述载体的相对侧上；以及●所述第一减薄管芯电连接至所述多个天线贴片中的每一个；
●第一模制化合物，所述第一模制化合物位于所述载体的所述顶表面上、围绕所述第一减薄管芯并且延伸到所述第一减薄管芯的顶表面之外，以在所述第一模制化合物内和所述第一减薄管芯之上限定第一开口，其中：
●所述第一模制化合物不位于所述第一减薄管芯之上，使得所述第一介电层和所述第一装置层不水平延伸到所述第一开口之外；
●所述第一模制化合物提供所述第一开口的竖直壁，所述竖直壁在X方向和Y方向两者上与所述第一减薄管芯的边缘对齐；
●所述X方向和所述Y方向平行于所述载体的所述顶表面，并且所述X方向和所述Y方向彼此正交；并且
●所述第一减薄管芯的所述顶表面是所述第一介电层的顶表面，并且处于所述第一开口的底部处；
●第一除热器的至少一部分，插入到所述第一开口中并且与所述第一减薄管芯热接触，其中：
●所述第一除热器的由所述第一模制化合物围绕的所述至少一部分不在所述X方向和所述Y方向两者上水平延伸到所述第一减薄管芯之外；并且
●所述第一除热器由金属或合金形成；以及
●印刷电路板PCB，所述PCB具有所述PCB的底表面上的至少一个板触点和散热器结构，其中：
●所述PCB的所述底表面处于所述第一模制化合物以及所述第一除热器之上；并且
●所述散热器结构与所述第一除热器热接触。
14.根据权利要求13所述的设备，进一步包括至少一个模穿孔TMV，其中：
●所述第一减薄管芯还包括从所述第一装置层的底面延伸到所述载体的顶表面的多个互连件；
●所述载体包括所述载体的所述顶表面处的多个载体触点，其中，所述多个互连件中的每个互连件电连接到所述多个载体触点中的对应载体触点；
●所述至少一个TMV通过对应载体触点电连接到所述第一减薄管芯，并且从所述第一模制化合物的底表面延伸穿过所述第一模制化合物到达所述第一模制化合物的顶表面；并且
●所述至少一个TMV电连接到所述至少一个板触点。
15.根据权利要求12所述的设备，其进一步包括：至少一个焊盘或至少一个焊球，所述至少一个焊盘或所述至少一个焊球形成于所述第二模制化合物之上并且电连接到所述至少一个TMV。
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