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51th ESSDERC 2021: Grenoble, France
- 51st IEEE European Solid-State Device Research Conference, ESSDERC 2021, Grenoble, France, September 13-22, 2021. IEEE 2021, ISBN 978-1-6654-3748-6
- Joël Hartmann, Paolo Cappelletti, Nitin Chawla, Franck Arnaud, Andreia Cathelin:
Artificial Intelligence: Why moving it to the Edge? 1-6 - Jean-René Léquepeys, Marc Duranton, Susana Bonnetier, Sandrine Catrou, Richard Fournel, Thomas Ernst
, Laurent Hérault, D. Louis, A. Jerraya, Alexandre Valentian, François Perruchot, Thomas Signamarcheix, Elisa Vianello, Carlo Reita:
Overcoming the Data Deluge Challenges with Greener Electronics. 7-14 - Jan M. Rabaey, Ana Claudia Arias, Rikky Muller:
Architecting the Human Intranet. 15-20 - Shimeng Yu
Compute-in-Memory: From Device Innovation to 3D System Integration. 21-28 - Mark J. W. Rodwell, Brian Markman, Yihao Fang, Logan Whitaker, Hsin-Ying Tseng, Ahmed S. H. Ahmed:
Transistors for 100-300GHz Wireless. 29-34 - Pierre Magnan:
The essential contribution of CMOS imaging technologies to Earth Observation applications. 35-42 - Suyash Pati Tripathi, Shai Bonen, Claudia Nastase, Sergiu Iordanescu
Compact Modelling of 22nm FDSOI CMOS Semiconductor Quantum Dot Cryogenic I-V Characteristics. 43-46 - Imran Bashir, Dirk Leipold, Mike Asker, Ali Esmailiyan, Elena Blokhina, David Redmond, Panagiotis Giounanlis, Dennis Andrade-Miceli, Robert Bogdan Staszewski:
Bias Generation and Calibration of CMOS Charge Qubits at 3.5 Kelvin in 22-nm FDSOI. 47-50 - Bozhi Yin, Hayk Gevorgyan, Deniz Onural, Anatol Khilo, Milos A. Popovic
Electronic-Photonic Cryogenic Egress Link. 51-54 - Amita Rawat
Performance Trade-Off Scenarios for GAA Nanosheet FETs Considering Inner-spacers and Epi-induced Stress: Understanding & Mitigating Process Risks. 55-58 - Damiano Marian, David Soriano, Enrique G. Marin, Giuseppe Iannaccone, Gianluca Fiori:
Electric-field controlled spin transport in bilayer CrI3. 59-62 - Benjamin Gys, Fahd A. Mohiyaddin, Rohith Acharya, Roy Li, Kristiaan De Greve, Georges G. E. Gielen, Bogdan Govoreanu, Iuliana P. Radu, Francky Catthoor:
Circuit Model for the Efficient Co-Simulation of Spin Qubits and their Control & Readout Circuitry. 63-66 - Asma Chabane, Mridula Prathapan, Peter Mueller, Eunjung Cha, Pier Andrea Francese
Cryogenic Characterization and Modeling of 14 nm Bulk FinFET Technology. 67-70 - Hung-Chi Han, Farzan Jazaeri, Antonio A. D'Amico, Andrea Baschirotto, Edoardo Charbon, Christian C. Enz:
Cryogenic Characterization of 16 nm FinFET Technology for Quantum Computing. 71-74 - Peter Deaville, Bonan Zhang, Lung-Yen Chen, Naveen Verma:
A Maximally Row-Parallel MRAM In-Memory-Computing Macro Addressing Readout Circuit Sensitivity and Area. 75-78 - Wantong Li
A 40nm RRAM Compute-in-Memory Macro Featuring On-Chip Write-Verify and Offset-Cancelling ADC References. 79-82 - Mona Ezzadeen, Atreya Majumdar, Marc Bocquet, Bastien Giraud, Jean-Philippe Noël, François Andrieu, Damien Querlioz, Jean-Michel Portal:
Low-Overhead Implementation of Binarized Neural Networks Employing Robust 2T2R Resistive RAM Bridges. 83-86 - Laura Bégon-Lours, Mattia Halter, Youri Popoff, Zhenming Yu, Donato Francesco Falcone, Bert Jan Offrein:
High-Conductance, Ohmic-like HfZrO4 Ferroelectric Memristor. 87-90 - Panagiotis Bousoulas, Ch. Papakonstantinopoulos, Dimitris Tsoukalas:
Emulating artificial mechanoreceptor functionalities from SiO2-based memristor and PDMS stretchable sensor for artificial skin applications. 91-94 - Ming Ming Wong, S. B. Shrestha, Vishnu P. Nambiar, Aarthy Mani, Yun Kwan Lee, Eng-Kiat Koh, W. Jiang, Kevin Tshun Chuan Chai, Anh-Tuan Do:
A 2.1 pJ/SOP 40nm SNN Accelerator Featuring On-chip Transfer Learning using Delta STDP. 95-98 - Lixuan Zhu, Weiwei Shan, Jiaming Xu, Yicheng Lu:
AAD-KWS: a sub-$\mu\mathrm{W}$ keyword spotting chip with a zero-cost, acoustic activity detector from a 170nW MFCC feature extractor in 28nm CMOS. 99-102 - Sanjeev Tannirkulam Chandrasekaran, Imon Banerjee
7.5nJ/inference CMOS Echo State Network for Coronary Heart Disease prediction. 103-106 - Yu-Tung Liu, ChuKing Kung, Ming-Hang Hsieh, Hsiu-Wen Wang, Chun-Pin Lin, Chao-Yang Yu, Chi-Shi Chen, Tzi-Dar Chiueh:
A 1.625 TOPS/W SOC for Deep CNN Training and Inference in 28nm CMOS. 107-110 - Benoit Larras, Antoine Frappé:
A 43pJ per Inference CBNN-based Compute-in-sensor Associative Memory in 28nm FDSOI. 111-114 - Jiyue Yang, Di Wu, Albert Lee, Seyed Armin Razavi, Puneet Gupta, Kang L. Wang, Sudhakar Pamarti
A Calibration-Free In-Memory True Random Number Generator Using Voltage-Controlled MRAM. 115-118 - Xinrui Guo, Xiaoyang Ma, Franz Müller
Exploiting FeFET Switching Stochasticity for Low-Power Reconfigurable Physical Unclonable Function. 119-122 - Gicheol Shin, Donguk Seo, Jaerok Kim, Johnny Rhe, Eunyoung Lee, Seonho Kim, Soyoun Jeong, Jong Hwan Ko, Yoonmyung Lee:
A Charge-Domain Computation-In-Memory Macro with Versatile All-Around-Wire-Capacitor for Variable-Precision Computation and Array-Embedded DA/AD Conversions. 123-126 - Viveka Konandur Rajanna, Sachin Taneja, Massimo Alioto:
SRAM with In-Memory Inference and 90% Bitline Activity Reduction for Always-On Sensing with 109 TOPS/mm2 and 749-1, 459 TOPS/W in 28nm. 127-130 - Chengshuo Yu, Kevin Tshun Chuan Chai, Tony Tae-Hyoung Kim, Bongjin Kim:
A Zero-Skipping Reconfigurable SRAM In-Memory Computing Macro with Binary-Searching ADC. 131-134 - Cédric Tubert, Pascal Mellot, Yann Desprez, Celine Mas, Arnaud Authié, Laurent Simony, Grégory Bochet, Stephane Drouard, Jeremie Teyssier, Damien Miclo, Jean-Raphael Bezal, Thibault Augey, Franck Hingant, Thomas Bouchet, Blandine Roig, Aurélien Mazard, Raoul Vergara, Gabriel Mugny, Arnaud Tournier, Frédéric Lalanne, François Roy, Boris Rodrigues Goncalves, Matteo Vignetti, Pascal Fonteneau, Vincent Farys, François Agut, Joao Miguel Melo Santos, David Hadden, Kevin Channon, Christopher Townsend, Bruce Rae, Sara Pellegrini:
$4.6\mu \mathrm{m}$ Low Power Indirect Time-of-Flight Pixel Achieving 88.5% Demodulation Contrast at 200MHz for 0.54MPix Depth Camera. 135-138 - Markus Dielacher, Martin Flatscher, Reinhard Gabl, Richard Gaggl
Advancements in indirect Time of Flight image sensors in front side illuminated CMOS. 139-142 - Mathieu Sicre, Megan Agnew, Christel Buj, Jean Coignus
Dark Count Rate in Single-Photon Avalanche Diodes: Characterization and Modeling study. 143-146 - Rubén Gómez-Merchán, María López-Carmona, Juan A. Leñero-Bardallo, Ángel Rodríguez-Vázquez:
A high-speed low-power sun sensor with solar cells and continuous operation. 147-150 - Gabriele Quarta
A 0. 94-\mu \mathrm{V}_{\text{rms}}$ Input Noise Pixel-Level Continuous Time $\Sigma\Delta$ IADC Interface for THz Sensing. 151-154 - Yuyang Li, Yejoong Kim, Eunseong Moon, Yuxin Gao, Jamie Phillips, Inhee Lee:
An Energy Autonomous Light Intensity Sensor for Monarch Butterfly Migration Tracking. 155-158 - Jonas Pelgrims, Kris Myny
A 36V Ultrasonic Driver for Haptic Feedback Using Advanced Charge Recycling Achieving 0.20CV2f Power Consumption. 159-162 - Peng Guo, Zu-Yao Chang, Emile Noothout, Hendrik J. Vos, Johan G. Bosch, Nico de Jong, Martin D. Verweij, Michiel A. P. Pertijs:
A Pitch-Matched Analog Front-End with Continuous Time-Gain Compensation for High-Density Ultrasound Transducer Arrays. 163-166 - Peishuo Li, Tom R. Molderez, Marian Verhelst
A 96-channel 40nm CMOS Fully-Integrated Potentiostat for Electrochemical Monitoring. 167-170 - Guowei Chen, Xinyang Yu, Yue Wang, Tran Minh Quan, Naofumi Matsuyama, Takuya Tsujimura, Md. Zahidul Islam
A 0.5 mm2 0.31 V/0.39 V 28 nW/144 nW 65 nm CMOS Solar Cell-Powered Biofuel Cell-Input Biosensing System with PIM/PDM LED Driving for Stand-Alone RF-Less Continuous Glucose Monitoring Contact Lens. 171-174 - R. Midahuen, Bernard Previtali, C. Fontelaye, G. Nonglaton, V. Stambouli, Sylvain Barraud:
Wafer-scale fabrication of biologically sensitive Si nanowire FET: from pH sensing to electrical detection of DNA hybridization. 175-178 - Eva Kempf, Pierre Labeye, Philippe Grosse, Frédéric Boeuf, Stéphane Monfray, Paul G. Charette, Régis Orobtchouk:
Design and Fabrication of a Ring-Coupled Mach-Zehnder Interferometer Gyroscope. 179-182 - Teodor Rosca, Fatemeh Qaderi, Adrian Mihai Ionescu:
High Tuning Range Spiking 1R-1T VO2 Voltage-Controlled Oscillator for Integrated RF and Optical Sensing. 183-186 - Quentin Courte, Martin Rack, M. Nabet, Pieter Cardinael
High-Temperature Characterization of Novel Silicon-Based Substrate Solutions for RF-IC Applications. 187-190 - Hans Herdian, Takeshi Inoue, Takuichi Hirano, Masatsugu Sogabe, Atsushi Shirane
Dual-Layer Proton Irradiation for Creating Thermally-Stable High-Resistivity Region in Si CMOS Substrate. 191-194 - Martin Rack, Lucas Nyssens, Quentin Courte, Dimitri Lederer, Jean-Pierre Raskin:
Impact of Device Shunt Loss on DC-80 GHz SPDT in 22 nm FD-SOI. 195-198 - Sameer H. Jain, Dimitri Lederer, Arvind Kumar, Sudesh Saroop, Chris Prindle, P. Srinivasan
Novel mmWave NMOS Device for High Pout mmWave Power Amplifiers in 45RFSOI. 199-202 - Jesús A. del Alamo, Xiaowei Cai, Xin Zhao, Alon Vardi, Jesús Grajal:
Nanoscale InGaAs FinFETs: Band-to-Band Tunneling and Ballistic Transport. 203-206 - Valentyn Solomko, Oguzhan Oezdamar, Robert Weigel, Amelie Hagelauer:
Model of Substrate Capacitance of MOSFET RF Switch Inspired by Inverted Microstrip Line. 207-210 - Richard Hudeczek, Peter Baumgartner:
Mechanical Band Gap Formation in Anisotropic CMOS Back-End-of-Line Stacks for Monolithic High-Q MEMS Resonator Confinement. 211-214 - Daniel Lizzit
Operation and Design of Ferroelectric FETs for a BEOL Compatible Device Implementation. 215-218 - Cristine Jin Estrada, Zichao Ma, Mansun Chan:
Complementary Two-Dimensional (2-D) MoS2 FET Technology. 219-222 - Michelly de Souza
Experimental Assessment of Variability in Junctionless Nanowire nMOS Transistors. 223-226 - Laura Zurauskaite
Improvement on Ge/GeOx/Tm2O3/HfO2 Gate Performance by Forming Gas Anneal. 227-230 - Andrea Redaelli
Improving Ge-rich GST ePCM reliability through BEOL engineering. 231-234 - Lukas Cvitkovich, Markus Jech, Dominic Waldhör
Multiscale Modeling Study of Native Oxide Growth on a Si(100) Surface. 235-238 - Diego Milardovich
Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide. 239-242 - Christoph Wilhelmer
Statistical Ab Initio Analysis of Electron Trapping Oxide Defects in the Si/SiO2 Network. 243-246 - Angeliki Tataridou, Gérard Ghibaudo, Christoforos G. Theodorou:
VERILOR: A Verilog-A Model of Lorentzian Spectra for Simulating Trap-related Noise in CMOS Circuits. 247-250 - C. Mukherjee, Marine Couret, Cristell Maneux, Didier Céli:
Impact of Hot Carrier Degradation on the Performances of Current Mirrors based on a 55 nm BiCMOS Integrated Circuit Technology. 251-254 - Riccardo Fontanini, Justine Barbot, Mattia Segatto
Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions. 255-258 - Etienne Becle, Philippe Talatchian, Guillaume Prenat, Lorena Anghel
Fast Behavioral VerilogA Compact Model for Stochastic MTJ. 259-262 - Fernando García-Redondo
A Fokker-Planck Solver to Model MTJ Stochasticity. 263-266 - Jérémy Grebot, Gabriel Mugny, Rémi Helleboid, Isobel Nicholson, Francesco Abbate, Denis Rideau, Hélène Wehbe-Alause, Claire Scheid, Stéphane Lanteri:
Semi-Empirical model for optical properties of Si1-xGex alloys accounting for strain and temperature. 267-270 - Rémi Helleboid, Denis Rideau, Isobel Nicholson, Norbert Moussy, Olivier Saxod, Marie Basset, Jérémy Grebot, Antonin Zimmerman, Bastien Mamdy, Dominique Golanski, Megan Agnew, Sara Pellegrini, Mathieu Sicre:
Comprehensive modeling and characterization of Photon Detection Efficiency and Jitter in advanced SPAD devices. 271-274 - Hyungrock Oh, Attilio Belmonte, Manu Perumkunnil, Jérôme Mitard, Nouredine Rassoul
Enhanced data integrity of In-Ga-Zn-Oxide based Capacitor-less 2T memory for DRAM applications. 275-278 - Yongwoo Lee
Vertical and lateral charge losses during short time retention in 3-D NAND flash memory. 279-282 - Olalekan Afuye, Shady Agwa, Christopher Batten, Alyssa B. Apsel:
Layout-Based Evaluation of Read/Write Performance of SOT-MRAM and SOTFET-RAM. 283-286 - Nikitas Siannas, Christina Zacharaki, Polychronis Tsipas, Stefanos Chaitoglou
Scaling ferroelectric HZO thickness for low power Ge MFS-FTJ memories. 287-290 - Fengben Xi
4-Terminal Ferroelectric Schottky Barrier Field Effect Transistors as Artificial Synapses. 291-294 - B. Rrustemi
Reliable method for low field temperature dependent mobility extraction at Al2O3/GaN interface. 295-298 - Roméo Kom Kammeugne
Parasitic Capacitance Analysis in Short Channel GaN MIS-HEMTs. 299-302 - Pieter Cardinael
Impact of III-N buffer layers on RF losses and harmonic distortion of GaN-on-Si Substrates. 303-306 - Anthony Calzolaro, Thomas Mikolajick
Integration and Reliability Aspects of Low-Temperature and Au-free Ta/Al-based Ohmic Contacts for AlGaN/GaN MIS-HEMTs. 307-310
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