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Jury Sandrini
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2020 – today
- 2023
- [i1]Joao Henrique Quintino Palhares, Yann Beilliard, Jury Sandrini, Franck Arnaud, Kevin Garello, Guillaume Prenat, Lorena Anghel, Fabien Alibart, Dominique Drouin, Philippe Galy:
A tunable and versatile 28nm FD-SOI crossbar output circuit for low power analog SNN inference with eNVM synapses. CoRR abs/2305.16187 (2023) - 2021
- [c6]Andrea Redaelli
, Anna Gandolfo, Giulia Samanni, Enrico Gomiero, Elisa Petroni, Luca Scotti, Andrea Lippiello, Paolo Mattavelli, J. Jasse, D. Codegoni, A. Serafini, Rossella Ranica, Christian Boccaccio, Jury Sandrini, R. Berthelon, J. C. Grenier, Olivier Weber, David Turgis, A. Valery, S. Del Medico, V. Caubet, J. P. Reynard, Didier Dutartre, L. Favennec, Antonino Conte, Fabio Disegni, M. De Tomasi, A. Ventre, Matteo Baldo, Daniele Ielmini, Alfonso Maurelli, P. Ferreira, Franck Arnaud, F. Piazza, Paolo Cappelletti, Roberto Annunziata, R. Gonella:
Improving Ge-rich GST ePCM reliability through BEOL engineering. ESSDERC 2021: 231-234 - [c5]Joel Minguet Lopez, Lucas Hudeley, Laurent Grenouillet, Diego Alfaro Robayo, Jury Sandrini, Gabriele Navarro
Elucidating 1S1R operation to reduce the read voltage margin variability by stack and programming conditions optimization. IRPS 2021: 1-6
2010 – 2019
- 2018
- [c4]Elmira Shahrabi, Cecilia Giovinazzo, Jury Sandrini, Yusuf Leblebici:
The key impact of incorporated Al2O3 barrier layer on W-based ReRAM switching performance. PRIME 2018: 69-72 - 2017
- [c3]B. Attarimashalkoubeh, Jury Sandrini, Elmira Shahrabi, Yusuf Leblebici:
Evolution of oxygen vacancies under electrical characterization for HfOx-based ReRAMs. ESSDERC 2017: 152-155 - 2016
- [j1]Jury Sandrini, Marios Barlas, Maxime Thammasack, Tugba Demirci, Michele De Marchi, Davide Sacchetto, Pierre-Emmanuel Gaillardon, Giovanni De Micheli, Yusuf Leblebici:
Co-Design of ReRAM Passive Crossbar Arrays Integrated in 180 nm CMOS Technology. IEEE J. Emerg. Sel. Topics Circuits Syst. 6(3): 339-351 (2016) - 2015
- [c2]Pierre-Emmanuel Gaillardon, Xifan Tang, Jury Sandrini, Maxime Thammasack, Somayyeh Rahimian Omam, Davide Sacchetto, Yusuf Leblebici, Giovanni De Micheli:
A ultra-low-power FPGA based on monolithically integrated RRAMs. DATE 2015: 1203-1208 - [c1]Jury Sandrini, Tugba Demirci, Maxime Thammasack, Davide Sacchetto, Yusuf Leblebici:
Low-voltage read/write circuit design for transistorless ReRAM crossbar arrays in 180nm CMOS technology. ISCAS 2015: 9-12
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