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KR940004761A - 기밀 밀봉된 집적회로 - Google Patents

기밀 밀봉된 집적회로 Download PDF

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Publication number
KR940004761A
KR940004761A KR1019930016758A KR930016758A KR940004761A KR 940004761 A KR940004761 A KR 940004761A KR 1019930016758 A KR1019930016758 A KR 1019930016758A KR 930016758 A KR930016758 A KR 930016758A KR 940004761 A KR940004761 A KR 940004761A
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KR
South Korea
Prior art keywords
silicon
ceramic
layer
integrated circuit
bond pads
Prior art date
Application number
KR1019930016758A
Other languages
English (en)
Other versions
KR100287487B1 (ko
Inventor
찰스 카밀레티 로버트
찬드라 그리쉬
존 로보다 마크
윈턴 마이클 키쓰
알랜 시라프스키 데이빗
Original Assignee
노만 에드워드 루이스
다우 코닝 코포레이션
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Publication of KR940004761A publication Critical patent/KR940004761A/ko
Application granted granted Critical
Publication of KR100287487B1 publication Critical patent/KR100287487B1/ko

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    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
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    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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Abstract

본 발명은 주위환경으로부터 보호된 집적회로에 관한 것이다. 이러한 회로는 비부식성 전도성 층을 본드 패드에 피복하고 추가의 세라믹 층을 1차 불활성 층에 피복시켜 기밀 밀봉한다.

Description

기밀 밀봉된 집적회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 불활성 층 및 비부식성 전도성 층을 갖는 반도체 장치의 단면도이고,
제2도는 본 발명의 불활성 층,
차단 금속 층 및 비부식성 전도성 층을 갖는 반도체 장치의 단면도이다.

Claims (10)

  1. 하나 이상의 본드 패드를 갖는 회로 반조립 부품; 하나 이상의 본드 패드에서 노출된 반조립 부품의 표면위에 있는 1차 불활성 층; 노출된 본드 패드를 덮고 있는 하나 이상의 비부식성 전도성 층; 및 1차 불활성 층을 덮고 있는 세라믹 층(여기서, 세라믹 층을 회로를 예비세라믹 규소-함유 물질을 포함하는 조성물로 피복시킨 다음 당해 물질을 세라믹으로 전환시킴으로 특징으로 하는 방법에 의해 침착된 규소-함유 세라믹 물질을 포함하고, 세라믹 층을 전도성 층과 밀접하게 접촉한다)을 포함하는 기밀 밀봉된 집적회로.
  2. 제1항에 있어서, 비부식성 전도성 층이 금, 은, 텅스텐, 땜납, 은-충전된 에폭시 및 구리로 이루어진 그룹중에서 선택된 물질로부터 제조된 집적회로.
  3. 제1항에 있어서, 세라믹 층이 산화규소, 질화규소, 규소 옥시니트라이드, 규소 옥시카바이드, 규소 카보니트라이드, 규소 옥시카보니트라이드 및 규소 카바이드로 이루어진 그룹 중에서 선택된 집적회로.
  4. 제1항에 있어서, 예비세라믹 규소-함유 물질이 수소 실세스퀴옥산 수지인 집적회로.
  5. 제1항에 있어서, 예비세라믹 규소-함유 물질이 가수분해 되거나 부분적으로 가수분해된 RnSi(OR)C4-n(여기서, R은 각각 독립적으로 탄소수 1내지 20의 지방족, 지환족 또는 방향족 치환체이고, n은 0내지 3이다)인 집적회로.
  6. 제1항에 있어서, 세라믹 층이 SiO2피막, SiO2/세라믹 산화물 피막, 규소 피막, 규소 탄소 함유 피막, 규소 질소 함유 피막, 규소 산소 질소 함유 피막, 규소 탄소 질소 함유 피막 및 다이아몬드형 탄소 피막으로부터 선택된 하나 이상의 추가의 세라믹 층에 의해 피복된 집적회로.
  7. 제1항에 있어서, 유기 캡슐제 및 규소 캡슐제로 이루어진 그룹 중에서 선택된 물질내에 서로 연결되고 밀봉된 집적회로.
  8. 제1항에 있어서, 세라믹 층이 자외선 및 가시광선을 통과 시키지 않는 집적회로.
  9. 하나 이상의 본드 패드를 갖는 회로 반조립 부품; 하나 이상의 본드 패드에서 노출된 반조립 부품의 표면위에 있는 1차 불활성 층; 본드 패드를 덮고 있는 확산 차단 금속 층; 확산 차단 금속 층을 덮고 있는 비부식성 전도성 층; 및 1차 불활성 층을 덮고 있는 세라믹 층(예 : 세라믹 층은 회로를 예비세라믹 규소-함유 물질을 포함하는 조성물로 피복시킨 다음 당해 물질을 세라믹으로 전환시킴을 특징으로 하는 방법에 의해 침작된 규소-함유 세라믹 물질을 포함하고, 세라믹 층은 전도성 층과 밀접하게 첩촉한다)을 포함하는 기밀 밀봉된 집적 회로.
  10. 제9항에 있어서, 차단 금속 층이 티탄, 티탄과 텅스텐과의 합금 및 티탄 니트라이드로 이루어진 그룹 중에서 선택된 집적회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930016758A 1992-08-28 1993-08-27 기밀 밀봉된 집적회로의 제조방법 KR100287487B1 (ko)

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US5935638A (en) * 1998-08-06 1999-08-10 Dow Corning Corporation Silicon dioxide containing coating
WO2008122292A1 (en) * 2007-04-04 2008-10-16 Ecole Polytechnique Federale De Lausanne (Epfl) Diffusion-barrier coating for protection of moisture and oxygen sensitive devices
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US4849296A (en) * 1987-12-28 1989-07-18 Dow Corning Corporation Multilayer ceramic coatings from metal oxides and hydrogen silsesquioxane resin ceramified in ammonia
US4888226A (en) * 1988-08-08 1989-12-19 American Telephone And Telegraph Company Silicone gel electronic device encapsulant
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