KR102730359B1 - Lighting source module and lighting apparatus having thereof - Google Patents

Abstract

The light source module disclosed in the embodiment includes: a circuit board; a plurality of semiconductor chips arranged on the circuit board; a reflective member arranged around the plurality of semiconductor chips; a phosphor layer arranged on the plurality of semiconductor chips and the reflective member; and a light-transmitting resin layer arranged on the phosphor layer.

Description

LIGHTING SOURCE MODULE AND LIGHTING APPARATUS HAVING THEREOF

The present invention relates to a light source module.

The present invention relates to a lighting device having a light source module.

Light-emitting devices, such as light-emitting diodes (LEDs), are a type of semiconductor device that converts electrical energy into light, and are receiving attention as a next-generation light source to replace existing fluorescent and incandescent lamps.

Light-emitting diodes use semiconductor elements to generate light, so they consume very little power compared to incandescent lamps, which generate light by heating tungsten, or fluorescent lamps, which generate light by striking a phosphor with ultraviolet rays generated through a high-voltage discharge.

In addition, light-emitting diodes generate light by utilizing the potential gap of semiconductor elements, so they have a longer lifespan, faster response characteristics, and are environmentally friendly compared to existing light sources.

Accordingly, much research is being conducted to replace existing light sources with light-emitting diodes, and light-emitting diodes are increasingly being used as light sources for lighting devices such as lamps, liquid crystal displays, billboards, streetlights, and headlights used indoors and outdoors.

The embodiment provides a light source module having improved luminous flux of light emitted through a phosphor layer.

The embodiment provides a light source module having a phosphor layer disposed on a plurality of semiconductor chips and a light-transmitting resin layer disposed on the phosphor layer.

The embodiment provides a light source module in which at least one of a side reflector of a reflective member and an outer protective portion of a light-transmitting resin layer is disposed on a side of a phosphor layer disposed on a reflective member and a semiconductor chip.

The embodiment provides a light source module having a light-extracting structure and a light-transmitting resin layer disposed on a phosphor layer.

The embodiment provides a lighting device having a light source module.

A circuit board according to an embodiment; a plurality of semiconductor chips arranged on the circuit board; a reflective member arranged around the plurality of semiconductor chips; a phosphor layer arranged on the plurality of semiconductor chips and the reflective member; and a light-transmitting resin layer arranged on the phosphor layer.

According to an embodiment of the present invention, a lighting device may include: the light source module; an inner lens on the plurality of light source modules; and an outer lens on the inner lens.

In an embodiment, the reflective member may have an area larger than the lower surface area of the fluorescent layer on the circuit board and may include a resin material.

In an embodiment, the reflective member may include a side reflector disposed on a side of the phosphor layer.

In an embodiment, the light-transmitting resin layer may include a light extracting structure.

According to an embodiment, the light-transmitting resin layer includes an incident portion arranged on the phosphor layer and a light extraction structure on the incident portion, and the light extraction structure may include at least one of a cone-shaped lens, a hemispherical lens, or an aspherical lens on the incident portion.

According to an embodiment, the light-transmitting resin layer may be formed of a resin material having a refractive index lower than that of the fluorescent layer.

In an embodiment, the light-transmitting resin layer may include an outer protective member arranged around an outer periphery of the light extraction structure. The outer protective member may be arranged on at least one area of an upper surface of the phosphor layer and an upper surface of the reflective member.

In an embodiment, the light-transmitting resin layer may include an outer protective member arranged on the outside of a side reflective portion of the reflective member.

According to an embodiment, a light guide layer made of a transparent resin material may be included between the reflective member and the semiconductor chip.

In addition, in the embodiment, the phosphor layer covers the plurality of semiconductor chips, and the side reflector may have a width that becomes thinner as it goes upward. In addition, in the embodiment, the reflective member may be in direct contact with the semiconductor chip. In addition, in the embodiment, the side reflector may be in direct contact with the phosphor layer. In addition, in the embodiment, the upper surface of the reflective member may be positioned below the height of the upper surfaces of the plurality of semiconductor chips. In addition, in the embodiment, the phosphor layer disposed on the plurality of semiconductor chips may be formed as an integral body. In addition, in the embodiment, the side reflector may not overlap the light-transmitting resin layer in the vertical direction of the upper surface of the circuit board.

A light source module according to an embodiment can effectively extract light emitted from a semiconductor chip by disposing a resin layer on a phosphor layer.

The embodiment can prevent a reduction in light loss and a reduction in light flux by suppressing a portion of a reflective member arranged around a semiconductor chip from penetrating into the side and upper surfaces of the phosphor layer.

The embodiment can reduce the color deviation emitted through the phosphor layer.

The embodiment can improve the luminous flux of the light source module.

The embodiment can improve the optical reliability of a light source module and a lighting device having the same.

Figure 1 is a plan view of a light source module according to the first embodiment.
Figure 2 is a cross-sectional view of the AA side of the light source module of Figure 1.
Figure 3 is a partially enlarged view of the light source module of Figure 2.
Fig. 4 is a cross-sectional view of the BB side of the light source module of Fig. 1.
Fig. 5 is another example of the light source module of Fig. 1.
Fig. 6 is a first variation example of the light source module of Fig. 2.
Fig. 7 is a second variation example of the light source module of Fig. 2.
Figure 8 is a cross-sectional side view of a light source module according to the second embodiment.
Figure 9 is a partially enlarged view of the light source module of Figure 8.
Fig. 10 is a drawing showing another shape of the light extraction structure of the light source module of Fig. 8.
Fig. 11 is a first variation example of the light source module of Fig. 8.
Fig. 12 is a second variation example of the light source module of Fig. 8.
Fig. 13 is a third variation example of the light source module of Fig. 8.
Fig. 14 is a fourth variation example of the light source module of Fig. 8.
Fig. 15 is a fifth variation example of the light source module of Fig. 8.
Fig. 16 is a plan view showing another form of a light source module according to an embodiment.
Fig. 17 is an example of a lighting device having a light source module according to an embodiment.
Fig. 18 is a drawing showing an example of a semiconductor chip according to an embodiment.
Figure 19 is a graph comparing the wavelength luminous intensity emitted from the light source module of Figure 2 with the wavelength luminous intensity of a comparative example.
Figure 20 is a graph comparing the wavelength luminous intensity emitted from the light source module of Figure 6 with the wavelength luminous intensity of a comparative example.
Figure 21 is a drawing comparing the wavelength luminous intensity emitted from the light source module of Figure 8 with the wavelength luminous intensity of a comparative example.
Figure 22 is a drawing comparing the wavelength luminous intensity emitted from the light source module of Figure 14 with the wavelength luminous intensity of a comparative example.

The present embodiments may be modified in other forms or several embodiments may be combined with each other, and the scope of the present invention is not limited to each embodiment described below. Even if a matter described in a specific embodiment is not described in another embodiment, it can be understood as a description related to the other embodiment, unless there is a description that is contrary or contradictory to the matter in another embodiment. For example, if a feature of component A is described in a specific embodiment and a feature of component B is described in another embodiment, even if an embodiment combining components A and B is not explicitly described, it should be understood that it falls within the scope of the present invention, unless there is a description that is contrary or contradictory.

Hereinafter, embodiments of the present invention that can specifically achieve the above purpose will be described with reference to the attached drawings.

In the description of embodiments according to the present invention, when it is described that each element is formed "on or under", "on or under" includes both cases where two elements are directly in contact with each other or where one or more other elements are formed by being disposed (indirectly) between the two elements. In addition, when expressed as "on or under", it can include the meaning of not only the upward direction but also the downward direction based on one element.

Semiconductor devices may include various electronic devices such as light-emitting devices, photodetectors, optical modulators, and gas sensors. The embodiment describes a gas sensor as an example, but is not limited thereto and may be applied to various fields of electrical devices.

A semiconductor device according to an embodiment may include a light-emitting structure including a first conductive semiconductor layer; an active layer on the first conductive semiconductor layer; and a second conductive semiconductor layer on the active layer. The active layer may selectively emit light within a range of wavelengths from ultraviolet to visible light. Such a semiconductor device may be implemented as a chip and defined as a semiconductor chip or a light-emitting chip.

Hereinafter, a light source module according to a first embodiment of the present invention will be described with reference to FIGS. 1 to 4.

FIG. 1 is a plan view of a light source module according to the first embodiment, FIG. 2 is a cross-sectional view taken along the A-A side of the light source module of FIG. 1, FIG. 3 is a partially enlarged view of the light source module of FIG. 2, and FIG. 4 is a cross-sectional view taken along the B-B side of the light source module of FIG. 1.

Referring to FIGS. 1 to 4, a light source module (100) includes a circuit board (110), a semiconductor chip (150) disposed on the circuit board (110), a reflective member (130) disposed around the semiconductor chip (150), a phosphor layer (170) disposed on the semiconductor chip (150) and the reflective member (130), and a light-transmitting resin layer (180) disposed on the phosphor layer (170).

The light source module (100) according to the embodiment may include a light source such as a blue LED, a green LED, a red LED, a white LED, a laser, or a vertical cavity surface-emitting laser (VESEL). The light source module (100) may convert the wavelength of some of the light emitted from one or more semiconductor chips and emit it.

<Circuit board (110)>

The circuit board (110) may include a circuit pattern. The circuit board (110) may include at least one of a printed circuit board (PCB) made of a resin material, a metal core PCB (MCPCB, Metal Core PCB), a flexible PCB (FPCB, Flexible PCB), and a ceramic material. The circuit board (110) may include a layer of a resin material or a layer of a ceramic series, and the resin material may be formed of a thermosetting resin including silicone, an epoxy resin, or a plastic material, or a high heat resistance, high light resistance material. The ceramic material includes a low temperature co-fired ceramic (LTCC) or a high temperature co-fired ceramic (HTCC) that are simultaneously fired.

The circuit board (110) may be arranged such that the length in the X-axis direction is longer than the length in the Y-axis direction, as shown in FIG. 1. Here, the X-axis direction may be the direction in which the semiconductor chips (150) are arranged, the Y-axis direction may be a direction orthogonal to the X-axis direction, and the Z-axis direction may be a direction orthogonal to the X and Y-axis directions or a thickness direction. As another example, the circuit board (110) may have the same length in the X and Y-axis directions.

The circuit board (110) may have lead electrodes (112, 114) on its upper surface, and the lead electrodes (112, 114) may include a first lead electrode (112) and a second lead electrode (114) that are spaced apart from each other. At least one or both of the first and second lead electrodes (112, 114) may be disposed below the semiconductor chip (150). The first and second lead electrodes (112, 114) may be electrically connected to the semiconductor chip (150). The lead electrodes (112, 114) of the circuit board (110) may include a plurality of metals, for example, titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin (Sn), silver (Ag), and phosphorus (P), and may be formed in multiple layers. A protective layer such as solder resist may be placed on the upper surface of the circuit board (110).

A protection chip (not shown) that electrically protects the semiconductor chip (150) may be placed on the circuit board (110). The protection chip may be implemented with a thyristor, a zener diode, or a TVS (transient voltage suppression), and the protection chip protects the semiconductor chip (150) from ESD (electro static discharge). The protection chip may be implemented within the semiconductor chip (150), but is not limited thereto.

<Semiconductor Chip (150)>

The semiconductor chip (150) above is a light source and selectively emits light in a wavelength band from ultraviolet to visible light. The semiconductor chip (150) includes a UV (ultra violet) LED chip, a green LED chip, a blue LED chip, or a red LED chip. The semiconductor chip (150) may include a device such as a laser or a VCSEL. The semiconductor chip (150) may have a thickness of 50 μm or more, for example, in a range of 50 μm to 300 μm. The thickness of the semiconductor chip (150) may vary depending on whether it is a horizontal chip or a vertical chip, and an example may be a vertical chip or a flip chip. The semiconductor chip (150) may have a top-view shape of a polygon, for example, a square or a rectangle. The semiconductor chip (150) may have a top-view shape of a circle or another polygonal shape, but is not limited thereto.

When the semiconductor chip (150) is a vertical chip, as shown in FIGS. 1 and 4, a first lead electrode (112) may be placed under the semiconductor chip (150), and the second lead electrode (114) may be spaced apart from the first lead electrode (112) and connected to the semiconductor chip (150) by a wire (156). A first opening (175) exposing an electrode on the semiconductor chip (150) may be placed in the fluorescent layer (170) and the light-transmitting resin layer (180), and a second opening (135) exposing the second lead electrode (114) of the circuit board (110) may be placed in the reflective member (130). The first opening (175) may have a circular or polygonal shape in a top view, and may be placed on each semiconductor chip (150). The second opening (135) may be polygonal or circular, and may be arranged in multiple positions so that a plurality of wires (175) connected to each semiconductor chip (150) pass through it, or so that each wire (175) passes through it. When the semiconductor chip (150) is a flip-type chip, as shown in FIG. 5, first and second lead electrodes (not shown) may be arranged under the semiconductor chip (150), so that the semiconductor chip (150) and the first and second lead electrodes may be electrically connected.

The lead electrodes (112, 114) of the circuit board (110) may be implemented in various patterns depending on the type of the semiconductor chip (150) or the connection type with the semiconductor chip (150), and are not limited thereto. When a plurality of semiconductor chips (150) are arranged, the circuit board (110) may connect the semiconductor chips (150) in series, series-parallel, parallel, or parallel-series.

The semiconductor chip (150) above includes a light-emitting structure (152) and an electrode layer (154), as shown in FIG. 4. The light-emitting structure (152) may include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, and may selectively emit light in a wavelength range from ultraviolet to visible light. The light-emitting structure (152) may include a group III-V compound semiconductor and a group II-VI compound semiconductor. The electrode layer (154) is connected to a first lead electrode and supplies power, and the electrode (25) on the light-emitting structure (152) may be connected by a wire (156). The electrode layer (154) may be implemented as a single layer or multiple layers, but is not limited thereto.

The semiconductor chips (150) above may be arranged in multiples in at least one row or column, or in two rows or/and two or more columns. The semiconductor chips (150) above may be arranged in multiples within a circular area having a predetermined diameter, as shown in FIG. 16.

When the above semiconductor chips (150) are arranged in multiples, they may be spaced apart from each other. The multiple semiconductor chips (150) may have a constant interval or different intervals, but are not limited thereto.

<Absence of reflection (130)>

The above reflective member (130) is disposed on the circuit board (110). The reflective member (130) is disposed around the semiconductor chip (150) on the circuit board (110). The reflective member (130) may contact a surface of the semiconductor chip (150), for example, side surfaces of the semiconductor chip (150). The upper surface of the reflective member (130) may be disposed at a height equal to or lower than the upper surface of the semiconductor chip (150). The reflective member (130) may be disposed in an area between the semiconductor chips (150). The lower surface area of the reflective member (130) may be equal to or smaller than the upper surface area of the circuit board (110). The upper surface area of the reflective member (130) may be wider than the lower surface area of the fluorescent layer (170), thereby reducing light loss. The upper surface of the above reflective member (130) may be in contact with or attached to the lower surface of the above fluorescent layer (170). The reflective member (130) may reflect light traveling toward the side of the semiconductor chip (150) or re-reflect light reflected by the fluorescent layer (170) or the light-transmitting resin layer (180). Accordingly, light loss may be reduced and light extraction efficiency may be improved.

The above reflective member (130) is arranged around the periphery of the semiconductor chip (150) to reflect light traveling in the lateral direction of the semiconductor chip (150) and reduce light loss.

The above reflective member (130) has a metal oxide added to a resin material. The resin material includes silicone or epoxy, and the metal oxide is a material having a higher refractive index than the resin material, for example, includes at least one of Al ₂ O ₃ , TiO ₂ , or SiO ₂ . The metal oxide is formed in the reflective member (130) in an amount of 5 wt% or more, for example, in a range of 5 to 30 wt%. The reflective member (130) can have a reflectivity of 90% or more for light emitted from the semiconductor chip (150). The reflective member (130) can include a resin material such as a synthetic resin, and a reflective pattern can be formed on a surface. As the synthetic resin, polyethylene naphthalate, acrylic resin, coke carbonate, polystyrene, polyolefin, cellulose acetate, and weather-resistant vinyl chloride can be applied.

As shown in FIGS. 2 and 3, the reflective member (130) includes a side reflection portion (132). The side reflection portion (132) may be disposed on the side surface of the phosphor layer (170). The side reflection portion (132) may reflect light leaking from the side surface of the phosphor layer (170). Since the side reflection portion (132) is disposed on the outer side of the upper surface of the phosphor layer (170), it may not affect light extracted through the upper surface of the phosphor layer (170). The side reflection portion (132) of the reflective member (130) may be disposed higher than the lower surface of the phosphor layer (170) and the same as or lower than the upper surface of the phosphor layer (170). The side reflection portion (132) may have a width that gradually becomes thinner as it goes upward. Here, the width direction of the side reflector (132) may be the thickness in the X-axis direction or the Y-axis direction based on the center of the fluorescent layer (170).

The thickness of the above reflective member (130) may be the same as or smaller than the thickness of the semiconductor chip (150). Since the reflective member (130) is formed after the semiconductor chip (150) is mounted, the reflective member (130) may move along the surface of the semiconductor chip (150) due to a capillary phenomenon. To prevent this, the reflective member (130) is disposed at a height lower than the upper surface of the semiconductor chip (150), and a fluorescent layer (170) and a light-transmitting resin layer (180) are disposed on the reflective member (130), thereby preventing a part of the reflective member (130) from moving to the upper surface of the semiconductor chip (150) or the upper surface of the fluorescent layer (170).

<Phosphor layer (170)>

The above-described fluorescent layer (170) may be arranged on the above-described reflective member (130) and the above-described semiconductor chip (150). The above-described fluorescent layer (170) may be in contact with the upper surface of the above-described reflective member (130). As shown in FIG. 1, the length of the above-described fluorescent layer (170) may be arranged such that the length in the X-axis direction is longer than the length in the Y-axis direction. The length of the above-described fluorescent layer (170) in the X-axis direction may be arranged such that the length is longer than the spacing between the outermost semiconductor chips (150) arranged in the X-axis direction, and the length in the Y-axis direction may be arranged such that the length is longer than the length of each semiconductor chip in the Y-axis direction. The above-described fluorescent layer (170) may be arranged such that it covers a plurality of semiconductor chips (150).

The above fluorescent layer (170) absorbs some of the light emitted from the semiconductor chip (150) and converts the light into light of a different wavelength. The fluorescent layer (170) may include a fluorescent substance in a light-transmitting resin material such as silicone or epoxy. The above phosphor may include at least one of a yellow phosphor, a green phosphor, a blue phosphor, and a red phosphor, and may be at least one selected from, for example, a nitride phosphor, an oxynitride phosphor, and a cyanophosphor mainly activated by lanthanoid elements such as Eu and Ce, an alkaline earth halogen apatite phosphor mainly activated by lanthanoid elements such as Eu and transition metal elements such as Mn, an alkaline earth metal borate halogen phosphor, an alkaline earth metal aluminate phosphor, an alkaline earth silicate, an alkaline earth sulfide, an alkaline earth thiogallate, an alkaline earth silicon nitride, a germanate, or a rare earth aluminate mainly activated by lanthanoid elements such as Ce, a rare earth silicate, or an organic and organic complex mainly activated by lanthanoid elements such as Eu. As specific examples, the above phosphors can be used, but are not limited thereto.

The above-described fluorescent layer (170) may have a thickness (T1) different from the thickness of the semiconductor chip (150), as shown in FIG. 2. The fluorescent layer (170) may be formed with a thickness (T1) of 100 ㎛ or more, for example, in a range of 100 ㎛ to 200 ㎛. If it is smaller than the above-described range, the fluorescent distribution may not be uniform, which may cause color deviation, and if it is larger than the above-described range, the light extraction efficiency may be reduced. The fluorescent layer (170) may have a thickness (T1) smaller than the thickness of the semiconductor chip (150) and may be attached onto the semiconductor chip (150). The fluorescent layer (170) may be provided in a film form. The upper and lower surfaces of the fluorescent layer (170) may be provided as horizontal planes. The fluorescent layer (170) may include a single-layer or multi-layer structure.

The light emitted from the above fluorescent layer (170) and the light emitted from the semiconductor chip (150) can be mixed into white light. The white light can have a color temperature, for example, within a range of 2000 K to 10000 K. The white light can have at least one color temperature among warm white, cool white, and neutral white.

<Transparent resin layer (180)>

The above-mentioned light-transmitting resin layer (180) is disposed on the above-mentioned fluorescent layer (170). The above-mentioned light-transmitting resin layer (180) can be attached to the upper surface of the above-mentioned fluorescent layer (170). The above-mentioned light-transmitting resin layer (180) can be formed of a transparent resin material such as silicone or epoxy. The above-mentioned light-transmitting resin layer (180) can include a fluorine resin, in which case the moisture-proofing characteristic can be improved. The above-mentioned light-transmitting resin layer (180) can be formed of a transparent layer to which no impurities such as a diffusion agent or fluorescent substance are added thereto. The above-mentioned light-transmitting resin layer (180) can transmit light incident through the above-mentioned fluorescent layer (170). The above-mentioned light-transmitting resin layer (180) can be a material having a lower refractive index than that of the above-mentioned fluorescent layer (170), or can include a material having a refractive index difference of 0.3 or less with respect to the above-mentioned fluorescent layer (170). Since the above-mentioned light-transmitting resin layer (180) is formed of a material having a lower refractive index than that of the above-mentioned fluorescent layer (170), it can transmit light incident through the above-mentioned fluorescent layer (170) without reflecting it. The above-mentioned light-transmitting resin layer (180) can be formed of a single layer or multiple layers of a transparent resin material.

The above-mentioned light-transmitting resin layer (180) may have an area equal to or smaller than the upper surface area of the above-mentioned fluorescent layer (170). If the above-mentioned light-transmitting resin layer (180) protrudes outwardly from the above-mentioned fluorescent layer (170), a problem may occur in which the protruding portion of the above-mentioned light-transmitting resin layer (180) is peeled off. Since the above-mentioned light-transmitting resin layer (180) is disposed on the above-mentioned fluorescent layer (170), the problem of a part of the above-mentioned reflective member (130) covering the upper surface of the above-mentioned fluorescent layer (170) is prevented, and the transmission efficiency of light incident through the above-mentioned fluorescent layer (170) can be improved. Accordingly, compared to a structure in which a medium such as air exists on the above-mentioned fluorescent layer (170), light loss can be reduced and light extraction efficiency can be improved.

As shown in FIG. 2, the thickness (T2) of the light-transmitting resin layer (180) may be arranged to be smaller than the thickness (T1) of the fluorescent layer (170), thereby reducing light loss. The thickness (T2) of the light-transmitting resin layer (180) may be arranged in a range of 0.1 to 0.9 times the thickness (T1) of the fluorescent layer (170), and may be arranged in a range of, for example, 10 μm to 180 μm. If the thickness (T2) of the light-transmitting resin layer (180) is smaller than the above range, the improvement in light extraction efficiency is minimal, and a problem may occur in which the reflective member (130) penetrates into the upper surface of the light-transmitting resin layer (180) having a thin thickness, and if it is larger than the above range, the light extraction efficiency may be reduced.

In the embodiment, since a light-transmitting resin layer (180) is arranged on the upper surface of a phosphor layer (170), the problem of a reflective member (130) penetrating into the upper surface of the edge side of the phosphor layer (170) can be prevented. Accordingly, the luminous flux of the light source module (100) can be improved. As shown in FIG. 19, the embodiment is a graph of the light source module of FIG. 2, and the comparative example is a graph showing the luminous flux when the light-transmitting resin layer (180) is removed from the light source module of FIG. 2. As in the luminous fluxes of the embodiment and the comparative example of FIG. 19, it can be seen that the luminous flux of the embodiment is higher by 2% or more in the peak wavelength emitted from the semiconductor chip (150) than that of the comparative example. For example, the semiconductor chip (150) emits a blue wavelength, and the phosphor layer (170) emits yellow light.

In the embodiment, a reflective member (130) is arranged around a plurality of semiconductor chips (150), and a fluorescent layer (170) is attached on the reflective member (130) and the semiconductor chip (150), thereby preventing the problem of the fluorescent layer (170) being peeled off, and improving the light incidence efficiency to the fluorescent layer (170). Since the fluorescent layer (170) is attached in a film form, a problem of color difference according to fluorescent distribution and a problem of luminescence deviation according to thickness difference can be eliminated.

FIG. 6 is a first modified example of the light source module of FIG. 2. In the description of FIG. 6, the description of the same configuration as the configuration disclosed above will be referred to the description above, and the configuration and description disclosed above can be selectively applied to the first modified example.

Referring to FIG. 6, the light source module includes a circuit board (110), a semiconductor chip (150), a reflective member (130), a phosphor layer (170), and a light-transmitting resin layer (180).

The above-described transparent resin layer (180) may be arranged on the upper surface of the fluorescent layer (170) with a predetermined thickness (T2). The transparent resin layer (180) includes an outer protective member (182), and the outer protective member (182) may extend to the side surfaces of the fluorescent layer (170) and the upper surface of the reflective member (130). The outer protective member (182) covers the perimeter of the entire side surface of the fluorescent layer (170). The outer protective member (182) may be provided in a flat shape on the upper surface. The outer protective member (182) may be arranged on the outer perimeter of the fluorescent layer (170) with a predetermined width (W1), and may be arranged with a width of, for example, 100 μm or more. When the width is less than 100 μm, the penetration path of the reflective member (130) may be short, which may reduce the penetration blocking effect. In addition, the outer protective part (182) can protect the side surface of the fluorescent layer (170) and extract light through the side surface of the fluorescent layer (170). The width of the outer protective part (182) can have a relationship of W1>T2.

The side reflection portion (132) of the above-described reflective member (130) may be arranged on the outer side of the outer protection portion (182) of the light-transmitting resin layer (180). By arranging the side reflection portion (132) on the outer side of the outer protection portion (182), light leaking in the lateral direction of the light-transmitting resin layer (180) may be effectively reflected, and the fluorescent layer (170) and the side reflection portion (132) of the reflective member (130) may be spaced apart. The side reflection portion (132) may be arranged along the outer perimeter of the outer protection portion (182). The side reflection portion (132) and the outer protection portion (182) may be arranged spaced apart from the edge of the reflective member (130).

As another example, the side reflection portion (132) of the reflective member (130) may be placed between the side surface of the fluorescent layer (170) and the outer protective portion (182) of the light-transmitting resin layer (180). The side reflection portion (132) may reflect light leaked through the side surface of the fluorescent layer (170). The side reflection portion (132) may improve the adhesion between the side surface of the fluorescent layer (170) and the outer protective portion (182) of the light-transmitting resin layer (180).

It can be seen that the embodiment of Fig. 6 shows that the luminous flux of the blue peak wavelength is 4% higher than that of the comparative example, as in Fig. 20. Here, the comparative example is a structure in which there is no light-transmitting resin layer (180) on the fluorescent layer (170) in the light source module of Fig. 6.

FIG. 7 is a second modified example of the light source module of FIG. 2. In the description of FIG. 7, the description of the same configuration as the configuration disclosed above will be referred to the description above, and the configuration and description disclosed above can be selectively applied to the second modified example.

Referring to FIG. 7, the light source module includes a circuit board (110), a semiconductor chip (150), a reflective member (130), a phosphor layer (170), and a light-transmitting resin layer (180).

The light source module may include a light guide layer (140) disposed between the reflective member (130) and the semiconductor chip (150). The light guide layer (140) may be disposed on a side surface of the semiconductor chip (150). The light guide layer (140) may be formed of a transparent resin material such as silicone or epoxy. The light guide layer (140) may be disposed along a groove (134) having a predetermined depth around the semiconductor chips (150). The depth of the groove (134) may be smaller than the thickness of the semiconductor chip (150), and the width of the groove (134) may be less than half the width of the semiconductor chip (150). The width of the groove (134) may gradually narrow as it goes downward or in the circuit board direction, but is not limited thereto.

A light guide layer (140) is arranged in the groove (134), and the light guide layer (140) can separate the reflective member (130) from the side surface of the semiconductor chip (150). The light guide layer (140) transmits and guides light emitted from the side surface of the semiconductor chip (150) or light reflected by the reflective member (130) arranged on the outside of the light guide layer (140). The light guide layer (140) can reflect light traveling in the lateral direction of the semiconductor chip (150) to the reflective member (130) and guide it in the emission direction. Accordingly, when the reflective member (130) is attached to the surface of the semiconductor chip (150), light loss from the side surface of the semiconductor chip (150) can be reduced. The above light guide layer (140) can be attached to the side surface of the semiconductor chip before mounting the semiconductor chip (150), and after mounting the semiconductor chip (150) and forming the reflective member (130), a groove (134) can be formed through the interface between the semiconductor chip (150) and the reflective member (130), and then the light guide layer (140) can be placed. The light guide layer (140) can be placed between the reflective member (130) and the semiconductor chip (150), thereby improving the extraction efficiency of side light in the semiconductor chip (150).

FIG. 8 is a cross-sectional side view showing a light source module according to the second embodiment, and FIG. 9 is a partial enlarged view of FIG. 8. In the description of FIGS. 8 and 9, the description of the same configuration as the configuration disclosed above will be referred to the description above, and the configuration and description disclosed above may be selectively applied.

Referring to FIGS. 8 and 9, the light source module includes a circuit board (110), a semiconductor chip (150), a reflective member (130), a phosphor layer (170), and a light-transmitting resin layer (190) having a light extraction structure.

The above-described transparent resin layer (190) may include a light extraction structure. The above-described transparent resin layer (190) may include an incident portion (191) and a light extraction structure having protrusions (192) on the incident portion (191). As shown in FIG. 9, the incident portion (191) may be arranged on the fluorescent layer (170) with a predetermined thickness (D3) to connect the protrusions (192) to each other. The incident portion (191) may be arranged with a thickness (D3) of 70 ㎛ or less, for example, in a range of 30 ㎛ to 70 ㎛, to reduce reflection loss of incident light and improve transmission efficiency. Light incident from the incident portion (191) may be extracted to the outside by changing the critical angle of the light through the light extraction structure. The light extraction structure includes a plurality of protrusions (192), and the plurality of protrusions (192) may be spaced apart from each other. Each of the above protrusions (192) may include at least one of a cone shape, for example, a polypyramid shape, a cone shape, a polypyramid truncated shape, a cone truncated shape, a hemispherical lens, and an aspherical lens. The plurality of protrusions (192) may be arranged in a matrix shape, or a plurality of rows or columns may be arranged in a zigzag shape. The area between the protrusions (192) may have a width that gradually narrows toward the incident portion (191).

As shown in FIG. 9, the period (D1) of the protrusions (192) may be n times the spacing (D5) between the protrusions (192), and n is a real number satisfying the relationship of 1 < n < 3. The period (D1) of the protrusions (192) may be m times the thickness of the incident portions (191), and m is a real number satisfying the relationship of 5 ≤ m ≤ 7. The height (D4) of the protrusions (192) may be in a range of 0.5 to 1.5 times the period (D1) between the protrusions (192). The height (D4) of the protrusions (192) may be greater than the thickness of the incident portions (191). The light-transmitting resin layer (190) having the light extraction structure may improve the extraction efficiency of light through the phosphor layer (170). In addition, since the light-transmitting resin layer (190) is arranged with an incident portion (191), it is possible to prevent the side reflection portion (132) of the reflection member (130) from penetrating into the upper surface of the fluorescent layer (170). The period (D1) may have a range of 2.5 μm to 3 μm.

The side reflection portion (132) of the above reflection member (130) is arranged on the side of the fluorescent layer (170) and can reflect light leaking in the lateral direction of the fluorescent layer (170). The side reflection portion (132) of the above reflection member (130) can be in contact with the side of the incident portion (191), but is not limited thereto.

FIG. 10 is another example of the light extraction structure of FIG. 9, in which the light extraction structure may have protrusions (192) having a hemispherical shape arranged in a zigzag pattern. Since the protrusions (192) of the light extraction structure are provided in a curved shape, they may refract incident light. In addition, since the light extraction structure is provided in a hemispherical shape, the height of the protrusions (192) may be lowered and the interval between the protrusions (192) may be narrowed. Accordingly, the amount of light transmitted to the protrusions (192) may be increased. The height (D4) of the protrusions (192) may be in the range of 1 μm to 2 μm and may be smaller than the period (D1) between the protrusions (192). The protrusions (192) having such a hemispherical lens shape may increase the bottom area, thereby improving the amount of incident light and extraction efficiency. The light extraction structure may be provided in the form of a micro lens array. The above protrusions (192) can be arranged in a hexagonal close-packed lattice or a face-centered cubic lattice form.

As shown in Fig. 21, it can be seen that the luminous flux of the light source module according to the second embodiment is increased by more than 2% compared to the comparative example. The comparative example has a structure in which light is extracted through the fluorescent layer (170) without a light-transmitting resin layer (190) having a light extraction structure.

Fig. 11 is a first variation example of the light source module of Fig. 8. In the description of Fig. 11, the description of the same configuration as the configuration disclosed above will be referred to the description above, and the configuration and description disclosed above may be selectively applied.

Referring to FIG. 11, the light source module includes a circuit board (110), a semiconductor chip (150), a reflective member (130), a phosphor layer (170), and a light-transmitting resin layer (190) having a light extraction structure.

The above-described transparent resin layer (190) includes an outer protective member (193). The outer protective member (193) is arranged along the outer perimeter of the protrusion (192), which is the light extraction structure, and may be formed in a ring shape or a frame shape. The outer protective member (193) is arranged on the upper edge area of the fluorescent layer (170) and functions as a dam. The outer protective member (193) protects the upper edge area of the fluorescent layer (170) from the reflective member (130). The outer protective member (193) may have a lateral cross-section in the shape of a triangle, a square, or a polygonal shape such as a trapezoid. The area of the lateral cross-section of the outer protective member (193) may be larger than the area of the lateral cross-section of each of the protrusions (192). The side reflective portion (132) of the above reflective member (130) may be in contact with the outer protective portion (193) of the light-transmitting resin layer (190), but is not limited thereto.

Fig. 12 is a second variation example of the light source module of Fig. 11. In the description of Fig. 12, the description of the same configuration as the configuration disclosed above will refer to the description above, and the configuration and description disclosed above may be selectively applied.

Referring to FIG. 12, the light source module includes a circuit board (110), a semiconductor chip (150), a reflective member (130), a phosphor layer (170), and a light-transmitting resin layer (190) having a light extraction structure.

A light guide layer (140) may be arranged between the reflective member (130) and the semiconductor chip (150). The light guide layer (140) may be in contact with a side surface of the semiconductor chip (150) and a lower surface of the fluorescent layer (170). The light guide layer (140) may guide light traveling through the side surface of the semiconductor chip (150) and reflect the light through the reflective member (130). The light guide layer (140) may be formed of a material such as silicon or epoxy. The light guide layer (140) may be arranged on one side surface, opposite sides surface, or all sides surface of the semiconductor chip (150), and may improve the extraction efficiency of light traveling laterally from the semiconductor chip (150).

Fig. 13 is a third variation example of the light source module of Fig. 11. In the description of Fig. 13, the description of the same configuration as the configuration disclosed above refers to the description above, and the configuration and description disclosed above can be selectively applied.

Referring to FIG. 13, the light source module includes a circuit board (110), a semiconductor chip (150), a reflective member (130), a phosphor layer (170), and a light-transmitting resin layer (190) having a light extraction structure.

The protrusion (192) of the light extraction structure includes a first region (A1) overlapping the semiconductor chip (150) and a second region (A2) overlapping the reflective member (130), and the height or size of the protrusion (192) arranged in the first region (A1) may be larger than the height or size of the protrusion (192) arranged in the second region (A2). By arranging the protrusion (192) of the first region (A1) arranged on the semiconductor chip (150) to have a larger size, the luminous intensity difference between the first region (A1) on the semiconductor chip (150) and the second region (A2) on the reflective member (130) can be reduced. The height of the protrusion (192) of the second region (A2) may be arranged in a range of 0.3 to 0.7 times the height of the protrusion (192) of the first region (A1).

Fig. 14 is a fourth variation example of the light source module of Fig. 11. In the description of Fig. 14, the description of the same configuration as the configuration disclosed above will refer to the description above, and the configuration and description disclosed above may be selectively applied.

Referring to FIG. 14, the light source module includes a circuit board (110), a semiconductor chip (150), a reflective member (130), a phosphor layer (170), and a light-transmitting resin layer (190) having a light extraction structure.

The outer protective part (193A) of the light-transmitting resin layer (190) may be arranged on the outer side of the side surface of the fluorescent layer (170). The outer protective part (193A) may extend to the side surface of the fluorescent layer (170) and the upper surface of the reflective member (130). The outer protective part (193A) of the light-transmitting resin layer (190) may be arranged in an area that does not overlap with the fluorescent layer (170) and may be in contact with the upper surface of the reflective member (130). The outer protective part (193A) may be attached to the side surface of the fluorescent layer (170) to prevent a part of the reflective member (130) from penetrating into the upper surface of the fluorescent layer (170). The side reflection portion (132) of the reflective member (130) is arranged on the outer side of the outer protection portion (193A) of the light-transmitting resin layer (190), and thus can be spaced apart from the fluorescent layer (170). The side reflection portion (132) of the reflective member (130) can be arranged between the outer protection portion (193A) of the light-transmitting resin layer (190) and the side of the fluorescent layer (170), so as to reflect light leaking in the lateral direction of the fluorescent layer (170), and can be closely coupled to the fluorescent layer (170) and the outer protection portion (193A). Here, the side reflection portion (132) of the reflective member (130) can be arranged on the outer periphery of the fluorescent layer (170) or on the outer periphery of the outer protection portion (193A).

As shown in FIG. 22, it can be seen that the luminous flux of the light source module of FIG. 14 is improved by more than 4% compared to the comparative example. The comparative example is a structure in which light is extracted through the fluorescent layer (170) without the light-transmitting resin layer (190) having the light extraction structure of the light source module. The light source module of FIG. 14 has a configuration in which an outer protective part (193A) of the light-transmitting resin layer (190) is further provided, compared to the light source module of FIG. 12, and the light extraction in the lateral direction of the fluorescent layer (170) can be improved by the outer protective part (193A).

Fig. 15 is a fourth variation example of the light source module of Fig. 11. In the description of Fig. 15, the description of the same configuration as the configuration disclosed above will refer to the description above, and the configuration and description disclosed above may be selectively applied.

Referring to FIG. 15, the light source module includes a circuit board (110), a semiconductor chip (150), a reflective member (130), a phosphor layer (170), and a light-transmitting resin layer (190) having a light extraction structure.

The light extraction structure of the above-described transparent resin layer (190) may expose the fluorescent layer (170) in the area between the plurality of protrusions (192). The light extraction structure may have the protrusions (192) spaced apart from each other, or the lower portions of the protrusions (192) may be in contact with each other. The light extraction structure may improve the light extraction efficiency by opening the area between the protrusions (192) or increasing the density of the protrusions (192).

FIG. 16 is a drawing showing another form of a light source module, in which a semiconductor chip (150) is arranged within a circular area having a predetermined diameter on a circuit board (110), and a fluorescent layer and a light-transmitting resin layer (190) may be arranged in a circular shape on the circular area. A reflective member (130) may be arranged on the circuit board (110) to reflect light. In this case, the number or density of the semiconductor chips (150) may be further increased. The shape of the outer line on which the semiconductor chips (150) are arranged may be a rectangular or square shape with a circular area, but is not limited thereto.

Fig. 17 is an example of a lighting device having a light source module according to an embodiment. In describing the lighting device above, the same parts as the configuration(s) disclosed above may be selectively applied. The lighting device may be variously applied to a backlight unit applied to a flat panel display, an interior light used in an indoor environment, a headlight, a fog light, a reversing light, a side light, a license plate light, a tail light, a brake light, a turn signal light, an emergency flasher light installed on the outside of a vehicle, or an interior light installed inside a vehicle.

Referring to FIG. 17, the lighting device includes a lighting module (200) having a light source module (100A, 100B, 100C) disclosed in the embodiment, an inner lens (215) for controlling the brightness of light emitted from the lighting module (110), a light shape control module (220) for controlling the light shape by diffracting the light emitted from the inner lens (215), and an outer lens (230) for implementing a light image by diffusing the light emitted from the light shape control module (220).

The light source modules (100A, 100B, 100C) of the above lighting module (200) are the light source modules disclosed above, and may be arranged in one or more, and may emit red, green, red, or white light. The plurality of light source modules (100A, 100B, 100C) may be driven individually or simultaneously, so that the brightness or amount of light may be controlled.

The inner lens (215) above can diffuse or focus incident light. The light shape control module (220) can be provided with a pattern for controlling the light shape at a position corresponding to each light source module (100A, 100B, 100C) at a predetermined distance (D) from the inner lens (215). The pattern can be applied to pattern an image that implements various light images on a transparent substrate, transparent film, or transparent sheet, or to implement a random pattern. For example, DOE (Diffractive optical elements) or HOE (Holographic optical elements) can be implemented.

The above outer lens (230) can implement an optical image by diffusing or focusing the incident light and outputting it. When applied to a vehicle lamp, this optical image can be implemented as a signal image, such as a straight strong light source, or a sudden stop, warning signal, or gradual path signal, for use in transmitting a predetermined signal.

Fig. 18 is an example of a semiconductor chip according to an embodiment.

Referring to FIG. 18, a semiconductor chip may include a light-emitting structure (10) having a plurality of semiconductor layers (11, 12, 13), a first electrode layer (20) under the light-emitting structure (10), a second electrode layer (50) under the first electrode layer (20), an insulating layer (41) between the first and second electrode layers (20, 50), and a plurality of first electrodes (25, 25A).

The above light-emitting structure (10) may include a first semiconductor layer (11), an active layer (12), and a second semiconductor layer (13). The active layer (12) may be arranged between the first semiconductor layer (11) and the second semiconductor layer (13). The active layer (12) may be arranged under the first semiconductor layer (11), and the second semiconductor layer (13) may be arranged under the active layer (12).

For example, the first semiconductor layer (11) may include an n-type semiconductor layer to which a first conductive dopant, for example, an n-type dopant, is added, and the second semiconductor layer (13) may include a p-type semiconductor layer to which a second conductive dopant, for example, a p-type dopant, is added. Also, conversely, the first semiconductor layer (11) may be formed as a p-type semiconductor layer, and the second semiconductor layer (13) may be formed as an n-type semiconductor layer.

The upper surface of the first semiconductor layer (11) may be formed as a rough uneven portion (11A), and this uneven surface (11A) may improve light extraction efficiency. The side cross-section of the uneven surface (11A) may include a polygonal shape or a hemispherical shape.

The first electrode layer (20) is disposed between the light-emitting structure (10) and the second electrode layer (50), is electrically connected to the second semiconductor layer (13) of the light-emitting structure (10), and is electrically insulated from the second electrode layer (50). The first electrode layer (20) includes a first contact layer (15), a reflective layer (17), and a capping layer (19), and the first contact layer (15) is disposed between the reflective layer (17) and the second semiconductor layer (13), and the reflective layer (17) is disposed between the first contact layer (15) and the capping layer (19). The first contact layer (15), the reflective layer (17), and the capping layer (19) may be formed of different conductive materials, but are not limited thereto.

The first contact layer (15) is in contact with the second semiconductor layer (13) and may form an ohmic contact with the second semiconductor layer (13), for example. The first contact layer (15) may be formed of, for example, a conductive oxide film, a conductive nitride, or a metal. The first contact layer 15 is, for example, Indium Tin Oxide (ITO), ITO Nitride (ITON), Indium Zinc Oxide (IZO), IZO Nitride (IZON), Aluminum Zinc Oxide (AZO), Aluminum Gallium Zinc Oxide (AGZO), Indium Zinc Tin Oxide (IZTO), Indium Aluminum Zinc Oxide (IAZO), It may be formed of at least one of Indium Gallium Zinc Oxide (IGZO), Indium Gallium Tin Oxide (IGTO), Antimony Tin Oxide (ATO), Gallium Zinc Oxide (GZO), IZO Nitride (IZON), ZnO, IrOx, RuOx, NiO, Pt, Ag, and Ti.

The above reflection layer (17) can be electrically connected to the first contact layer (15) and the capping layer (19). The above reflection layer (17) can perform the function of reflecting light incident from the light-emitting structure (10) to increase the amount of light extracted to the outside.

The above reflection layer (17) may be formed of a metal having a light reflectance of 70% or more. For example, the above reflection layer (17) may be formed of a metal or alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au, and Hf. In addition, the reflective layer (17) may be formed as a multilayer using the metal or alloy and a light-transmitting conductive material such as ITO (Indium-Tin-Oxide), IZO (Indium-Zinc-Oxide), IZTO (Indium-Zinc-Tin-Oxide), IAZO (Indium-Aluminum-Zinc-Oxide), IGZO (Indium-Gallium-Zinc-Oxide), IGTO (Indium-Gallium-Tin-Oxide), AZO (Aluminum-Zinc-Oxide), ATO (Antimony-Tin-Oxide). For example, in the embodiment, the reflective layer (17) may include at least one of Ag, Al, an Ag-Pd-Cu alloy, or an Ag-Cu alloy. For example, the reflection layer (17) may be formed by alternating Ag layers and Ni layers, and may include Ni/Ag/Ni, Ti layers, or Pt layers. As another example, the first contact layer (15) may be formed below the reflection layer (17), and at least a portion thereof may pass through the reflection layer (17) to contact the second semiconductor layer (13). As another example, the reflection layer (17) may be arranged below the first contact layer (15), and a portion thereof may pass through the first contact layer (15) to contact the second semiconductor layer (13).

A semiconductor chip according to an embodiment may include a capping layer (19) disposed under the reflective layer (17). The capping layer (19) is in contact with a lower surface of the reflective layer (17), and a contact portion (34, 34A) is coupled with a first electrode (25, 25A), thereby functioning as a wiring layer that transmits power supplied from the first electrode (25, 25A). The capping layer (19) may be formed of a metal, and may include at least one of, for example, Au, Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo.

The plurality of first electrodes (25, 25A) include pads and may be arranged on the outside of the light-emitting structure (10). As another example, the plurality of second electrodes may be arranged on the outside of the light-emitting structure (10) or on the upper surface of the light-emitting structure (10).

The contact portion (34, 34A) of the capping layer (19) is arranged in an area that does not vertically overlap with the light-emitting structure (10) and vertically overlaps with the first electrode (25, 25A). The contact portion (34, 34A) of the capping layer (19) is arranged in an area that does not vertically overlap with the first contact layer (15) and the reflective layer (17). The contact portion (34, 34A) of the capping layer (19) is arranged at a lower position than the light-emitting structure (10) and can be in direct contact with the first electrode (25, 25A).

The above first electrode (25, 25A) may be formed as a single layer or multiple layers, and the single layer may be Au, and in the case of multiple layers, may include at least two of Ti, Ag, Cu, and Au. Here, in the case of multiple layers, it may have a stacked structure of Ti/Ag/Cu/Au or a stacked structure of Ti/Cu/Au. Among the above reflection layer (17) and the first contact layer (15), the first electrode (25, 25A) may be in direct contact with the first electrode, but is not limited thereto.

The first electrode (25, 25A) may be placed in an area between the outer wall of the first electrode layer (20) and the light-emitting structure (10). The protective layer (30) and the light-transmitting layer (45) may be in contact with the periphery of the first electrode (25, 25A).

The protective layer (30) is placed on the lower surface of the light-emitting structure (10) and can be in contact with the lower surface of the second semiconductor layer (13) and the first contact layer (15), and can be in contact with the reflective layer (17).

The inner portion of the protective layer (30) that vertically overlaps with the light-emitting structure (10) may be arranged to vertically overlap with the area of the protrusion (16). The outer portion of the protective layer (30) extends over the contact portion (34, 34A) of the capping layer (19) and is arranged to vertically overlap with the contact portion (34, 34A). The outer portion of the protective layer (30) may be in contact with the first electrode (25, 25A) and may be arranged, for example, on the peripheral surface of the first electrode (25, 25A).

The inner part of the protective layer (30) may be arranged between the light-emitting structure (10) and the first electrode layer (20), and the outer part may be arranged between the light-transmitting layer (45) and the contact part (34, 34A) of the capping layer (19). The outer part of the protective layer (30) may extend to an outer region than the side wall of the light-emitting structure (10), thereby preventing moisture from penetrating.

The above protective layer (30) may be defined as a channel layer, a low-refractive material, or an isolation layer. The protective layer (30) may be implemented with an insulating material, and may be implemented with, for example, an oxide or a nitride. For example, the protective layer (30) may be formed by selecting at least one from the group consisting of SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , AlN, etc. The protective layer (30) may be formed with a transparent material.

A semiconductor chip according to an embodiment may include an insulating layer (41) that electrically insulates the first electrode layer (20) and the second electrode layer (50). The insulating layer (41) may be disposed between the first electrode layer (20) and the second electrode layer (50). An upper portion of the insulating layer (41) may be in contact with the protective layer (30). The insulating layer (41) may be implemented with, for example, an oxide or a nitride. For example, the insulating layer (41) may be formed by selecting at least one from the group consisting of SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , AlN, etc.

The insulating layer (41) may be formed with a thickness of, for example, 100 nm to 2000 nm. If the thickness of the insulating layer (41) is formed to be less than 100 nm, a problem may occur in the insulating properties, and if the thickness of the insulating layer (41) is formed to be more than 2000 nm, breakage may occur in a subsequent process step. The insulating layer (41) contacts the lower surface of the first electrode layer (20) and the upper surface of the second electrode layer (50), and may be formed thicker than the thickness of each of the protective layer (30), the capping layer (19), the contact layer (15), and the reflective layer (17).

The second electrode layer (50) may include a diffusion barrier layer (52) disposed under the insulating layer (41), a bonding layer (54) disposed under the diffusion barrier layer (52), and a conductive support member (56) disposed under the bonding layer (54), and may be electrically connected to the first semiconductor layer (11). In addition, the second electrode layer (50) may selectively include one or two of the diffusion barrier layer (52), the bonding layer (54), and the conductive support member (56), and at least one of the diffusion barrier layer (52) or the bonding layer (54) may not be formed.

The diffusion barrier layer (52) may include at least one of Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo materials. The diffusion barrier layer (52) may also function as a diffusion barrier layer between the insulating layer (41) and the bonding layer (54). The diffusion barrier layer (52) may be electrically connected to the bonding layer (54) and the conductive support member (56), and may be electrically connected to the first semiconductor layer (11).

The above diffusion prevention layer (52) can perform a function of preventing a material included in the bonding layer (54) from diffusing toward the reflection layer (17) in the process of providing the bonding layer (54). The diffusion prevention layer (52) can prevent a material such as tin (Sn) included in the bonding layer (54) from affecting the reflection layer (17).

The bonding layer (54) includes a barrier metal or a bonding metal, and may include, for example, at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd, or Ta. The conductive support member (56) may support the light-emitting structure (10) according to the embodiment and perform a heat dissipation function. The bonding layer (54) may also include a seed layer.

The conductive support member (56) may be formed of at least one of a metal or carrier substrate, for example, Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, Cu-W, or an impurity-injected semiconductor substrate (for example, Si, Ge, GaN, GaAs, ZnO, SiC, SiGe, etc.). The conductive support member (56) is a layer for supporting the light-emitting element (100), and its thickness is 80% or more of the thickness of the second electrode layer (50), and may be formed to be 30 ㎛ or more.

Meanwhile, the second contact layer (33) is arranged inside the first semiconductor layer (11) and is in contact with the first semiconductor layer (11). The upper surface of the second contact layer (33) may be arranged above the lower surface of the first semiconductor layer (11), is electrically connected to the first semiconductor layer (11), and is insulated from the active layer (12) and the second semiconductor layer (13).

The second contact layer (33) may be electrically connected to the second electrode layer (50). The second contact layer (33) may be arranged to penetrate the first electrode layer (20), the active layer (12), and the second semiconductor layer (15). The second contact layer (33) is arranged in a recess (2) arranged in the light-emitting structure (10), and is insulated by the active layer (12), the second semiconductor layer (15), and the protective layer (30). A plurality of second contact layers (33) may be arranged spaced apart from each other.

The second contact layer (33) may be connected to a protrusion (51) of the second electrode layer (50), and the protrusion (51) may protrude from the diffusion barrier layer (52). The protrusion (51) may penetrate through a hole (41A) arranged in the insulating layer (41) and the protective layer (30), and may be insulated from the first electrode layer (20).

The second contact layer (33) may include, for example, at least one of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au, and Mo. The protrusion (501) may include, as another example, at least one of the materials constituting the diffusion barrier layer (52) and the bonding layer (54), but is not limited thereto. For example, the protrusion (51) may include, for example, at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd, or Ta.

The first electrode (25, 25A) is electrically connected to the first electrode layer (20) and may be exposed to an area outside the side wall of the light-emitting structure (10). The first electrodes (25, 25A) may be arranged in multiples. The first electrodes (25, 25A) may include at least one of, for example, Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe, and Mo materials.

The light-transmitting layer (45) can protect the surface of the light-emitting structure (10), insulate between the first electrode (25, 25A) and the light-emitting structure (10), and can be in contact with the periphery of the protective layer (30). The light-transmitting layer (45) has a lower refractive index than the material of the semiconductor layer constituting the light-emitting structure (10), and can improve light extraction efficiency. The light-transmitting layer (45) can be implemented with, for example, an oxide or a nitride. For example, the light-transmitting layer (45) can be formed by selecting at least one from the group consisting of Si0 ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , AlN, etc. Meanwhile, the light-transmitting layer (45) may be omitted depending on the design. According to an embodiment, the light-emitting structure (10) can be driven by the first electrode layer (20) and the second electrode layer (50).

The vehicle lighting unit according to the present invention can be applied to tail lights, stop lights, and turn signals. In other words, it can be applied to various lamp devices requiring lighting, such as vehicle lamps, household lighting devices, and industrial lighting devices. For example, when applied to vehicle lamps, it can also be applied to headlights, vehicle interior lighting, door scarves, rear lights, etc. In addition, the lighting device of the present invention can be applied to the field of backlight units applied to liquid crystal displays, and in addition, it can be applied to all lighting-related fields that are currently developed and commercialized or can be implemented according to future technological developments.

The features, structures, effects, etc. described in the embodiments above are included in at least one embodiment of the present invention, and are not necessarily limited to just one embodiment. Furthermore, the features, structures, effects, etc. exemplified in each embodiment can be combined or modified and implemented in other embodiments by a person having ordinary knowledge in the field to which the embodiments belong. Therefore, the contents related to such combinations and modifications should be interpreted as being included in the scope of the present invention.

In addition, although the above description has been made with reference to examples, these are merely examples and do not limit the present invention, and those with ordinary knowledge in the field to which the present invention pertains will recognize that various modifications and applications not exemplified above are possible without departing from the essential characteristics of the present invention. For example, each component specifically shown in the examples can be modified and implemented. And, the differences related to such modifications and applications should be interpreted as being included in the scope of the present invention defined in the appended claims.

110: Circuit board
130: Absence of reflection
132: Side reflector
150: Semiconductor Chips
170: Fluorescent film
180,190: Translucent resin layer
191: Admissions Department
192: Light extraction structure
193: Outer Protection Unit

Claims (11)

circuit board;
A plurality of semiconductor chips arranged on the circuit board;
A reflective member arranged around the periphery of the plurality of semiconductor chips;
A phosphor layer disposed on the plurality of semiconductor chips and the reflective member;
A light-transmitting resin layer disposed on the above fluorescent layer, and
It includes a side reflector formed on the above reflective member and arranged on the side of the fluorescent layer,
The above fluorescent layer and the light-transmitting resin layer are disposed on the upper portion of the plurality of semiconductor chips and in the region between the plurality of semiconductor chips,
The above fluorescent layer covers the plurality of semiconductor chips,
The side reflector above becomes thinner as it goes up.
A light source module in which the phosphor layers arranged on the plurality of semiconductor chips are formed as an integral body. In the first paragraph,
A light source module in which the above reflective member is in direct contact with the semiconductor chip. In the first paragraph,
A light source module in which the above-mentioned side reflector is in direct contact with the above-mentioned phosphor layer. In the first paragraph,
A light source module wherein the above-mentioned light-transmitting resin layer includes an incident portion arranged on the above-mentioned phosphor layer and a light extraction structure having a plurality of protrusions on the incident portion. In the first paragraph,
The above-mentioned light-transmitting resin layer includes a resin material having a lower refractive index than that of the above-mentioned fluorescent layer,
A light source module in which the lower surface of the above-mentioned light-transmitting resin layer has an area equal to or smaller than the upper surface area of the above-mentioned fluorescent material layer. delete delete In the first paragraph,
A light source module including a light guide layer made of a transparent resin material arranged between the reflective member and each side of the plurality of semiconductor chips. In the first paragraph,
A first opening is disposed on the light-transmitting resin layer and the phosphor layer to expose the electrodes of each of the plurality of semiconductor chips, and a second opening is disposed on the reflective member and exposes the upper portion of the circuit board.
The circuit board includes a plurality of first lead electrodes arranged below each of the plurality of semiconductor chips, and a second lead electrode exposed through the second opening and connected to the electrodes of each of the plurality of semiconductor chips by wires.
Each of the above plurality of semiconductor chips is a light source module electrically connected to the first and second lead electrodes. In the first paragraph,
A light source module, wherein the side reflector does not overlap the light-transmitting resin layer in the vertical direction of the upper surface of the circuit board. At least one light source module;
Inner lens on the above light source module; and
An outer lens is included on the inner lens,
The above light source module,
circuit board;
A plurality of semiconductor chips arranged on the circuit board;
A reflective member arranged around the periphery of the plurality of semiconductor chips;
A phosphor layer disposed on the plurality of semiconductor chips and the reflective member;
A light-transmitting resin layer disposed on the above fluorescent layer; and
It includes a side reflector formed on the above reflective member and arranged on the side of the fluorescent layer,
The above fluorescent layer and the light-transmitting resin layer are disposed on the upper portion of the plurality of semiconductor chips and in the region between the plurality of semiconductor chips,
The above fluorescent layer covers the plurality of semiconductor chips,
The side reflector above becomes thinner as it goes up.
A lighting device including a light source module in which the phosphor layers arranged on the plurality of semiconductor chips are formed as an integral part.

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