JP2015228397A - Method of manufacturing light-emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of manufacturing a light-emitting device capable of achieving high light extraction.SOLUTION: A method of manufacturing a light-emitting device where a light-emitting element is flip-chip mounted on a support includes a first step for preparing a structure including a semiconductor layer including first and second semiconductor layers, an n-side electrode for electrical connection with the first semiconductor layer, and a p-side electrode for electrical connection with the second semiconductor layer, on the lower surface of a substrate having an upper surface, a lower surface, and a side face including an inclined plane inclining outward from the lower surface side to the upper surface side, a second step for preparing a support having n-side wiring and p-side wiring on the same plane, a third step for electrically connecting the n-side electrode and p-side electrode of the structure, and the n-side wiring and p-side wiring of the support, respectively, a fourth step for covering the inclined plane of the side face of the substrate with a light reflection member, and a fifth step for obtaining a light-emitting element by removing the substrate from the structure following to the fourth step, and forming a recess including a wall becoming higher from the upper end of the semiconductor layer toward the outside in the light reflection member.

Description

  The present invention relates to a method for manufacturing a light emitting device.

  A light emitting device is generally manufactured by mounting a light emitting element such as a light emitting diode on a support. One method for mounting a light emitting element is flip chip mounting. In flip chip mounting, for example, an electrode formed on the side opposite to the substrate of the light emitting element is electrically connected to the support, and the substrate side can be used as a light emitting slope of the light emitting element.

  Furthermore, in order to improve the light extraction of the light emitting device, a light emitting device in which the substrate is removed after the light emitting element is flip-chip mounted is known. The removal of the substrate can be performed by laser lift off or the like. Specifically, laser light having a wavelength that is transmissive to the substrate and absorbed by the semiconductor layer is irradiated from the back side of the substrate toward the semiconductor layer of the light-emitting element. By doing so, the semiconductor layer near the interface between the substrate and the semiconductor layer is decomposed, and the substrate is separated from the semiconductor layer. As a result, light emitted from the light emitting element is not absorbed or diffused by the substrate, so that light extraction of the light emitting device can be improved.

  Note that an underfill is filled between the light emitting element and the support body before irradiation with the laser light, whereby the load applied to the light emitting element at the time of laser lift-off can be reduced. In the semiconductor light emitting device described in Patent Document 1, an underfill material is formed on the epitaxial structure and the side surface of the substrate, and the substrate is removed to form an encapsulant that contains the phosphor / transparent material mixture. With this enclosure, it is possible not only to control the thickness of the phosphor layer, but also to prevent light leakage from the side surface of the element.

JP 2006-344971 A

  However, in Patent Document 1, an underfill material is injected between a carrier substrate (support) and a semiconductor light-emitting element (structure), and the inclusion is formed by creeping up on the epitaxial structure and the side surface of the substrate. Therefore, it is difficult to form an encapsulant having a sufficient thickness, and there is a problem that light cannot be leaked from the semiconductor light emitting element and light cannot be efficiently reflected outside.

  The present invention has been made in view of the above problems, and provides a method for manufacturing a light emitting device capable of realizing high light extraction.

  A method of manufacturing a light emitting device according to one aspect of the present invention is a method of manufacturing a light emitting device in which a light emitting element is flip-chip mounted on a support, and includes an upper surface, a lower surface, and an outer surface from the lower surface side toward the upper surface side. A semiconductor layer including a first semiconductor layer and a second semiconductor layer on a lower surface side of a substrate having an inclined surface inclined in a direction; an n-side electrode electrically connected to the first semiconductor layer; A first step of preparing a structure in which a p-side electrode electrically connected to the second semiconductor layer is formed, and a first step of preparing a support body having an n-side wiring and a p-side wiring on the same surface. The third step of electrically connecting the n-side electrode and the p-side electrode of the structure, and the n-side wiring and the p-side wiring of the support, respectively, and the side surface of the substrate by the light reflecting member A fourth step of covering the inclined surface of the substrate, and the substrate is structured after the fourth step. By et removed, the light reflecting member, characterized in that it comprises a fifth step of forming a recess having a wall portion which increases outwardly from the upper end portion of the semiconductor layer.

  Thereby, the light-emitting device which can implement | achieve high light extraction can be manufactured.

FIG. 1 is a cross-sectional view showing a configuration of a light emitting device 100 according to Embodiment 1 of the present invention. FIG. 2A is a cross-sectional view showing the configuration of the structure 7 according to Embodiment 1 of the present invention. FIG. 2B is a cross-sectional view showing the configuration of the structure 7 according to Embodiment 1 of the present invention. FIG. 3A is a cross-sectional view showing the first step in the method for manufacturing light-emitting device 100 according to Embodiment 1 of the present invention. FIG. 3B is a cross-sectional view showing a first step in the method for manufacturing light-emitting device 100 according to Embodiment 1 of the present invention. FIG. 3C is a cross-sectional view showing a first step in the method for manufacturing light-emitting device 100 according to Embodiment 1 of the present invention. FIG. 3D is a cross-sectional view showing the first step in the method for manufacturing light-emitting device 100 according to Embodiment 1 of the present invention. FIG. 3E is a cross-sectional view showing the first step in the method for manufacturing light-emitting device 100 according to Embodiment 1 of the present invention. FIG. 3F is a cross-sectional view showing the first step in the method for manufacturing light-emitting device 100 according to Embodiment 1 of the present invention. FIG. 3G is a cross-sectional view showing a first step in the method for manufacturing light-emitting device 100 according to Embodiment 1 of the present invention. FIG. 4 shows the second step in the method for manufacturing the light emitting device 100 according to Embodiment 1 of the present invention, and is a cross-sectional view of a support that is a collective substrate. FIG. 5A is a cross-sectional view showing a third step in the method for manufacturing light-emitting device 100 according to Embodiment 1 of the present invention. FIG. 5B is a cross-sectional view showing a third step in the method for manufacturing light-emitting device 100 according to Embodiment 1 of the present invention. FIG. 6A is a cross-sectional view showing a fourth step in the method for manufacturing light-emitting device 100 according to Embodiment 1 of the present invention. FIG. 6B is a cross-sectional view showing a fourth step in the method for manufacturing light-emitting device 100 according to Embodiment 1 of the present invention. FIG. 7 is a cross-sectional view showing the fifth step in the method for manufacturing the light emitting device 100 according to Embodiment 1 of the present invention. FIG. 8 is a cross-sectional view illustrating the first sealing member forming step in the method for manufacturing the light emitting device 100 according to Embodiment 1 of the present invention. FIG. 9A is a cross-sectional view showing a reflective layer forming step in the method for manufacturing light emitting device 100 according to Embodiment 1 of the present invention. FIG. 9B is a cross-sectional view illustrating the reflective layer forming step in the method for manufacturing light emitting device 100 according to Embodiment 1 of the present invention. FIG. 10 is a cross-sectional view illustrating the second sealing member forming step in the method for manufacturing the light emitting device 100 according to Embodiment 1 of the present invention. FIG. 11A is a cross-sectional view illustrating a singulation process in the method for manufacturing light emitting device 100 according to Embodiment 1 of the present invention. FIG. 11A is a top view illustrating the light emitting device 100 that is separated into pieces in the method for manufacturing the light emitting device 100 according to Embodiment 1 of the present invention. FIG. 12 is a cross-sectional view illustrating a third step in the method for manufacturing the light emitting device 200 according to Embodiment 2 of the present invention. FIG. 13 is a cross-sectional view showing the fourth step in the method for manufacturing the light-emitting device 200 according to Embodiment 2 of the present invention. FIG. 14A is a cross-sectional view illustrating a configuration of a light emitting device 200 according to Embodiment 2 of the present invention. FIG. 14B is a top view showing the configuration of the light-emitting device 200 according to Embodiment 2 of the present invention. FIG. 15 is a cross-sectional view of the light emitting device 200 after the fifth step, showing the configuration of the light emitting device 200 according to Embodiment 2 of the present invention. FIG. 15 shows a configuration of a light emitting device 300 formed by a manufacturing method different from that of the light emitting device 200 according to Embodiment 2 of the present invention, and is a cross-sectional view of the light emitting device 300 after the fifth step.

  Embodiments of the present invention will be described below with reference to the drawings. However, it is not specified in the manufacturing method of the light-emitting device described below, and the dimensions, materials, shapes, relative arrangements, etc. of the component parts are merely illustrative examples unless otherwise specified. The size and positional relationship of the members indicated by may be exaggerated for clarity of explanation. Further, in principle, the same names and symbols indicate the same or the same members, and detailed description thereof will be omitted as appropriate. Each element and embodiment constituting the present invention can be applied in appropriate combinations, changes, modifications, etc. unless otherwise specified.

Embodiment 1
As shown in FIG. 1, the light emitting device 100 according to the present embodiment is electrically connected to the first semiconductor layer 2 and the semiconductor layer 5 including the first semiconductor layer 2, the active layer 3, and the second semiconductor layer 4. The light emitting element 9 having the n-side electrode 6a and the p-side electrode 6b electrically connected to the second semiconductor layer 3 includes the n-side wiring 11a and the p-type wiring 11b on the support 11 including the base material 11c. And a mode of being electrically connected to each other. Further, the light reflecting member 20 formed so as to surround at least the periphery of the semiconductor layer 5 protrudes from the upper surface 5 a on the opposite side (semiconductor layer 5) of the semiconductor layer 5. The wall portion 20b protruding from the upper surface 5a is provided so as to become higher from the upper end portion of the semiconductor layer 5 toward the outside. Here, “outside” refers to the direction from the upper end of the semiconductor layer 5 to the outside of the light emitting device 100, and it is sufficient that at least a part of the wall 20 a has such a shape. Further, in this specification, “toward” is used to mean “to (in a certain direction)”.

The light emitting device 100 of this embodiment can be manufactured by the following steps.
<First step>
First, in the first step, a structure 7 as shown in FIG. 2A is prepared. The structure 7 includes a substrate 1, a semiconductor layer 5 formed on the substrate 1, an n-side conductive member 61a and a p-side conductive member 61b connected to the semiconductor layer 5, and an n-side electrode 6a and a p-side electrode 6b. And have.
The substrate 1 has an upper surface 1a, a lower surface 1b, and a side surface 1c. On the surface of the lower surface 1b, an n-type semiconductor layer that is the first semiconductor layer 2, an active layer 3, and a p-type semiconductor layer that is the second semiconductor layer 4 are sequentially stacked to form the semiconductor layer 5.
The side surface 1c of the substrate is a surface connecting the upper surface 1a and the lower surface 1b of the substrate, and indicates a surface other than the upper surface 1a and the lower surface 1b of the substrate. The side surface 1c of the substrate has an inclined surface 1ca that is inclined outward from the lower surface 1b side of the substrate toward the upper surface 1a side. Therefore, in a cross-sectional view, the angle formed by the lower surface 1b and the side surface 1c (inclined surface 1ca) of the substrate is an obtuse angle. In this embodiment, the surface area of the upper surface 1a of the substrate is larger than the surface area of the lower surface 1b of the substrate. As shown in FIG. 2B, it is only necessary that at least a part of the side surface 1c of the substrate has the inclined surface 1ca as described above. In addition, the shape of the substrate 1 can be freely formed as long as it is a shape that allows the substrate 1 to be removed in a fifth step described later. The side surface 1c of the substrate may have irregularities, but if it is configured with a smooth surface, the surface of the wall portion 20b to be described later can be smoothed and light can be efficiently reflected. This is preferable because it is possible.

  Hereinafter, a method for forming the structure 7 will be described in detail. In addition, the structure and formation method of the semiconductor layer 5, the electrode 6, the insulating layer 62, and the like of the structure 7 to be described in detail are examples, and can be freely changed as appropriate.

  First, as shown in FIG. 3A, a wafer is prepared in which an n-type semiconductor layer that is the first semiconductor layer 2, an active layer 3, and a p-type semiconductor layer that is the second semiconductor layer 4 are previously stacked on a substrate. Next, as shown in FIG. 3B, the n-type semiconductor layer 2, the active layer 3, and the p-type semiconductor layer 4 are partially removed by etching to expose the n-type semiconductor layer 2, thereby obtaining a semiconductor layer 5. As the substrate 1, for example, a sapphire substrate can be used, and the n-type semiconductor layer 2, the active layer 3, and the p-type semiconductor layer 4 can be nitride semiconductors. The semiconductor layer 5 may include a buffer layer and a contact layer. The exposed portion of the n-type semiconductor layer 2 may be provided so as to be an end portion of the structure 7, or may be provided so as to be surrounded by the p-type semiconductor layer 4 at the center of the structure 7, and is not particularly limited. . As will be described later, when this etching is performed, the n-type semiconductor layer 2 is etched wide and the lower surface 1c of the substrate is exposed to be wide as shown in FIG. It is easy to form 1ca. Thereafter, as shown in FIG. 3C, an n-side conductive member 61a and a p-side conductive member 61b are formed on the uppermost n-type semiconductor layer 2 and p-type semiconductor layer 4, respectively. The n-side conductive member 61a and the p-side conductive member 61b may be made of a material having a high light reflectivity including a metal such as aluminum or silver, and a translucent electrode such as ITO may be used as appropriate.

  Then, as shown in FIG. 3D, the insulating layer 62 that covers the n-side conductive member 61a, the p-side conductive member 61b, and the semiconductor layer 5 is exposed so that a part of the n-side conductive member 61a and the p-side conductive member 61b is exposed. Provide. The insulating layer 62 is for insulating the semiconductor layer 5 from the conductive member and the electrode. The material is preferably selected from at least one oxide or nitride selected from silicon, titanium, cerium, niobium, tantalum, and aluminum. Also, a DBR (Distributed Bragg Reflector) in which these are laminated can be used. The DBR has a multilayer structure in which a plurality of sets of dielectrics composed of a low refractive index layer and a high refractive index layer are stacked, and can selectively reflect light having a predetermined wavelength. In the present embodiment, a DBR that can reflect the emission wavelength from the active layer 3 is preferable. The insulating layer 62 can be formed by sputtering, vapor deposition, ALD, or the like.

  Subsequently, as shown in FIG. 3E, an n-side electrode 6a connected to the n-side conductive member 61a is formed in a portion exposed from the insulating layer 62, and a p-side electrode 6b connected to the p-side conductive member 61b is formed. To do. The material of the n-side electrode 6a and the p-side electrode 6b is not particularly limited as long as it can be electrically connected to the support 11 by an adhesive (for example, solder or anisotropic conductive member described later), and gold, Metals such as silver, platinum, aluminum, rhodium, tungsten, titanium, nickel, palladium, and copper can be used, and gold is particularly preferable. Moreover, although these metals may be used by a single layer, you may laminate | stack and use a some metal. In the case where the insulating layer 62 has light transmittance, it is preferable to use a material having a high light reflectivity at least on the surface in contact with the insulating layer 62. By doing so, light transmitted through the insulating layer 62 can be reflected, and the light-emitting device 100 with high light extraction efficiency can be obtained. In order to stably mount the structure 7 on the support 11, it is preferable that the heights of the n-side electrode 6 a and the p-side electrode 6 b are substantially the same. In addition, when the shape and area of the n-side electrode 6a and the p-side electrode 6b are substantially the same in plan view, the support 11 can be stably mounted. A metal bump or the like may be provided on the electrode.

  Thereafter, the wafer on which the semiconductor layer 5 and the electrodes are formed is appropriately separated into desired dimensions to obtain the desired structure 7 (chip of the light emitting element 9) shown in FIG. 2A. The side surface 1c of the substrate 1 of the structure 7 has an inclined surface 1ca that is inclined outward from the lower surface 1b side of the substrate toward the upper surface 1a side. In the present embodiment, as shown in FIG. 2A, substantially the entire side surface 1c of the substrate is inclined outward from the lower surface 1b side of the substrate toward the upper surface 1a side. Such a shape is preferable because a wall portion 20b (described later) of the light reflecting member 20 capable of efficiently reflecting light from the semiconductor layer 5 toward the light emitting surface side can be formed.

  Hereinafter, a method of forming the inclined surface 1ca that is inclined outward from the lower surface 1b side of the substrate 1 toward the upper surface 1a side on the side surface 1c of the substrate 1 will be described. Note that not only the side surface 1c of the substrate but also a part of the side surface of the semiconductor layer 5 may be inclined.

The inclined surface 1ca can be formed, for example, when the wafer on which the semiconductor layer 5 and the electrodes are formed is appropriately divided into desired dimensions. Hereinafter, an example of the method is shown in FIG. 3F.
First, a substrate 10 of a wafer is fixed, and a blade 10 having a pair of side surfaces with inclined surfaces that form an inclination angle with respect to the lower surface 1b of the substrate is prepared. Then, by cutting the wafer from the lower surface 1b side of the substrate, a desired structure 7 including a substrate having an inclined surface 1ca along the inclination of the blade 10 as shown in FIG. 3G can be obtained. Therefore, the substrate 1 of the structure 7 includes an inclined surface 1ca that is inclined outward from the lower surface 1b side to the upper surface 1a side of the substrate. In this case, as described above, if the lower surface 1b side of the substrate is exposed widely, it is easy to prevent the substrate 1 from being cracked or damaged, and to easily form the side surface 1c of the substrate into a desired shape. For example, when the wafer is singulated to form a structure having a thickness of about 50 to 200 μm, and the angle formed by the lower surface 1b of the substrate and the inclined surface 1ca of the substrate is about 20 to 60 °, It is preferable that the lower surface 1b of the substrate is exposed to about 35 to 700 μm, more preferably about 250 to 350 μm, respectively. In addition, after each of the structures 7 of the substrate is separated into pieces with the side surface of the substrate not inclined, that is, in a substantially vertical state, the side surface 1c of the substrate can be processed to form the inclined surface 1ca. . In addition, the inclined surface 1ca may be formed by etching or the like, and the inclined surface 1ca can be appropriately formed using a desired method.

  The inclination angle formed between the inclined surface 1ca and the lower surface 1b of the substrate is an obtuse angle, preferably about 100 to 150 °, more preferably about 120 to 150 °, and the substrate 1 is removed in the fifth step. This is preferable because the light from the semiconductor layer 5 can be efficiently reflected upward by the wall portion 20b of the light reflecting member 20 formed.

<Second step>
On the other hand, as shown in FIG. 4, in the second step, a support 11 having n-side wiring 11a and p-side wiring 11b on the same surface is prepared. For example, the support 11 may be configured such that the n-side wiring 11a and the p-side wiring 11b are supported by the base material 11c. In addition, in this embodiment, it can also be set as the support body 11 which does not provide the base material 11c by mounting the structure 7 in a lead frame.
The base material 11c is made of epoxy resin, silicone resin, PPA or the like, aluminum nitride (AIN), single crystal, polycrystal, sintered substrate, ceramic such as alumina, glass, semimetal or metal substrate such as silicon, or Those laminates and composites can be used. In particular, ceramic is not easily deformed by heat or the like, and can improve reliability in laser irradiation described later. The shape of the support 11 is preferably a flat plate because it is easy to make a small light emitting device.
The material of the n-side wiring 11a and the p-side wiring 11b is not particularly limited as long as it has conductivity. When a metal having high reflectance such as silver, aluminum, gold, or platinum is used, Light extraction efficiency can be improved. When gold is used as the wiring material, it is possible to obtain a wiring having high bonding reliability with the conductive particles 22 included in the anisotropic conductive member 21 described later. Specifically, for example, a wiring in which an Au layer having a thickness of about 10 to 50 μm is formed on a Ti layer having a thickness of about 10 nm can be used. In addition, nickel / gold, aluminum / gold, or the like may be used. When the wiring is formed with a lead frame using gold, silver, or the like, wettability with solder or the like used for mounting the light emitting device is good and preferable.

  The support 11 is preferably prepared as a collective substrate in which a plurality of the supports 11 are connected as shown in FIG. Thereby, since the some structure 11 can be mounted, mass-productivity can be improved. Moreover, also in the process of removing the board | substrate 1 mentioned later, a tact can be raised and mass productivity can be improved. The support 11 that is an aggregate substrate is finally separated into individual light emitting devices.

<Third step>
Next, in a third step, the structure 7 is flip-chip mounted on the support 11. More specifically, the n-side electrode 6a and the p-side electrode 6b of the structure 7 and the n-side wiring 11a and the p-side wiring 11b of the support 11 are opposed to each other and electrically connected to each other. For the connection, for example, a conductive adhesive 25 such as solder, an anisotropic conductive member 21 or the like can be used. In the first embodiment, a case where a conductive adhesive 25 such as solder is used will be described.

  In the third step of the first embodiment, first, as shown in FIG. 5A, solder 25 is supplied onto the n-side wiring 11 a and the p-side wiring 11 b of the support 11. The supply of the solder 25 can be performed by, for example, a coating method or a printing method. In addition, a known method such as a plating method, a vapor deposition method, or a stud bump method may be used. On the solder 25, the n-side electrode 11a and the p-side electrode 12b of the structure 7 are positioned and arranged, and heated (and optionally pressurized), so that the structure 7 and the support as shown in FIG. 5B. 11 are bonded and electrically connected. Here, the supply amount of the solder 25 is an amount that can electrically connect the electrode of the structure and the electrode of the support.

  Thereafter, it is preferable to fill the space between the structure 7 and the support 11 with an underfill. The underfill may be injected into the space between the structure 7 and the support 11 or may be applied on the support 11 before connecting the structure 7, and is not particularly limited. By disposing the underfill below the structure 7, it is possible to reduce the load applied to the structure 7 by laser lift-off or the like described later. When an underfill containing a light reflective material is used, light from the semiconductor layer 5 can be efficiently reflected toward the light emitting surface. The underfill may be formed integrally with the light reflecting member 20 described later.

  Examples of underfill materials include silicone resins, modified silicone resins, epoxy resins, modified epoxy resins, acrylic resins, urea resins, fluorine resins, combinations of these resins, or hybrid resins containing one or more of these resins. In particular, silicone resins and epoxy resins are preferable. Examples of the light reflecting material include titanium oxide, zinc oxide, titanium dioxide, silicon dioxide, zirconium dioxide, potassium titanate, alumina, aluminum nitride, boron nitride, mullite, niobium oxide, various rare earth oxides (for example, yttrium oxide). , Gadolinium oxide) and the like can be used.

  The supply amount and the viscosity of the underfill are not particularly limited as long as the space between the structure 7 and the support 11 can be satisfied, and can be provided outside the outer edge of the structure 7 in plan view. To do.

<4th process>
Next, in a fourth step, the light reflecting member 20 that covers at least the inclined surface 1ca of the substrate of the structure 7 is formed. In the fourth step of the first embodiment, the light reflecting member 20 is formed using a mold. More specifically, the electrically connected structure 7 and support 11 are set in a mold, and the light reflecting member 20 is filled in the mold and cured. As shown in FIG. 6A, the light reflecting member 20 covers at least the inclined surface 1ca on the side surface of the substrate of the structure 7 and is formed at a height not covering the upper surface 1a of the substrate. More specifically, the light reflecting member 20 covers the periphery of the structure 7 (that is, the semiconductor layer 5, the electrodes 6a and 6b, the substrate 1) and the support 11, and fills the space between the structure 7 and the support. Formed. When formed on the upper surface 1a of the substrate, the upper surface 1a of the substrate is exposed by appropriately removing it by cutting or polishing. In addition, the light reflection member 20 should just coat | cover at least one part of the inclined surface 1ca, as FIG. 6B shows.

  Thus, when the light reflecting member 20 is formed by molding with a mold, the shape can be easily controlled, and a light emitting device in which light from the semiconductor layer 5 hardly leaks to the side can be obtained. That is, the light reflecting member 20 formed by scooping up the resin or the like tends to be thinner as the upper portion of the wall portion 20b (the upper surface of the wall portion 20b is less likely to be a substantially flat surface or a substantially flat surface). However, when the light reflecting member 20 is formed using a mold, for example, the upper surface 20ba is a substantially flat surface, and a wall portion 20b having a sufficient thickness can be formed (see FIG. 1, FIG. 6A, etc.) This is preferable from the viewpoint of improving the light extraction of the light emitting device.

  As a material of the light reflecting member 20 of the first embodiment, a light transmissive base material containing the light reflective material 24 is preferable. As the base material, for example, a resin material can be used. As the resin material, a silicone resin, a modified silicone resin, an epoxy resin, a modified epoxy resin, an acrylic resin, a urea resin, a fluororesin, or a hybrid resin containing at least one or more of these resins can be used. Examples of the light reflecting material 24 include titanium oxide, zinc oxide, aluminum oxide, titanium dioxide, silicon dioxide, zirconium dioxide, potassium titanate, alumina, aluminum nitride, boron nitride, mullite, niobium oxide, various rare earth oxides ( Examples thereof include yttrium oxide and gadolinium oxide.

<Fifth step>
After the fourth step, as shown in FIG. 7, the substrate 1 is removed from the structure 7 in the fifth step, and the recess 20 a is formed in the light reflecting member 20. The removal of the substrate 1 can be performed by laser lift-off (LLO) by laser irradiation. For example, the semiconductor material is decomposed in the vicinity of the boundary between the substrate 1 and the semiconductor layer 5 by irradiating the semiconductor layer 5 with a high-power laser beam such as an excimer laser from the upper surface 1a side of the substrate. The substrate 1 is separated and separated. Note that laser light having a wavelength that passes through the substrate 1 and is absorbed by the semiconductor layer 5 is used. For example, when the substrate 1 is a sapphire substrate and the semiconductor layer 5 is GaN, the above-described excimer laser (wavelength: about 248 nm) or YAG laser (wavelength: about 266 nm) can be used.

  The remaining part from which the substrate 1 is removed from the structure 7 becomes the light emitting element 9. By removing the substrate 1 of the structure 7, the upper surface 5 a of the semiconductor layer 5 is exposed and a recess 20 a is formed. The wall 20b that forms the recess 20a protrudes from the upper surface 5a of the semiconductor layer and surrounds the periphery of the semiconductor layer 5. This wall portion 20b is the light reflecting member 20 formed so as to cover the inclined surface 1ca of the substrate in the fourth step, and the shape of the concave portion 20b is the shape of the substrate 1 covered by the light reflecting member 20. Depends on. Therefore, since the side surface 1c of the substrate has the inclined surface 1ca that is inclined outward from the lower surface 1b side to the upper surface 1a side, the concave portion 20a has a portion that becomes wider toward the light emitting surface side. That is, the wall portion 20 b (light reflecting member 20) has an inner surface that increases from the upper end portion of the semiconductor layer 5 toward the outside.

  As described above, from the viewpoint of preventing light leakage and reducing the size of the light emitting device 100, the upper surface 20ba of the wall portion 20b (light reflecting member) is preferably a substantially flat surface, more preferably a substantially flat surface. Such a substantially flat surface or a substantially flat surface may be formed when the light reflecting member 20 is formed, or may be formed by cutting or polishing after the substrate 1 is removed. Moreover, when the upper surface of the 1st sealing member 40 which is a light-projection surface mentioned later and the upper surface 20ba of the wall part 20b (light reflection member) are formed substantially flush | planar, it can be set as the light-emitting device with a good parting.

  The height of the upper surface 20ba of the wall portion 20b (light reflecting member) can be adjusted as appropriate. For example, the height may be adjusted in the fourth step of forming the light reflecting member 20, or after the substrate 1 is removed, It is also possible to adjust the height to be low by polishing or the like.

  Since the inner surface of the wall portion 20b functions as a light reflecting surface that reflects light from the semiconductor layer 5 upward, a smooth surface is preferable because light can be efficiently reflected. However, it may have irregularities due to the shape of the side surface 1c of the substrate, and in that case, the adhesion with the first sealing member 40 to be described later formed in the recess 20a can be improved. It is preferable from the viewpoint of preventing peeling between the two.

  As described above, the wall portion 20b (light reflecting member) can efficiently reflect the light from the semiconductor layer 5 toward the light emitting surface side of the light emitting device, and the recess portion 20a formed by the wall portion 20b It can be used as a cavity for forming a first sealing member 40 and / or a reflective layer 50 described later.

<Other processes>
(Roughening process)
It is preferable to roughen the upper surface 5a of the semiconductor layer after removing the substrate 1 in the fifth step. The roughening can be performed by a physical or chemical method, but is preferably performed by etching in order to reduce damage to the light emitting element 9. For example, the light-emitting element 9 and the support are put on an acidic liquid such as phosphoric acid or an alkaline liquid such as potassium hydroxide, sodium hydroxide, trimethylammonium, tetramethylammonium hydroxide solution, and the upper surface 5a of the semiconductor layer is etched. . By doing so, the upper surface 5a of the semiconductor layer can be roughened, and the light extraction efficiency can be improved. Further, if the lower surface 1b of the substrate has irregularities, the semiconductor layer 5 is stacked on the irregularities and the substrate 1 is removed, so that the upper surface 5a of the semiconductor layer corresponds to the irregularities of the lower surface 1b of the substrate. It can be.

(First sealing member forming step)
In the present embodiment, as shown in FIG. 8, a translucent first sealing member 40 can be formed in the recess 20 a. By doing so, the upper surface 5a of the semiconductor layer can be protected. In addition, the light of the light-emitting device 100 can be made into a desired luminescent color by forming the 1st sealing member 40 containing phosphor. Although the 1st sealing member 40 may be comprised only with fluorescent substance, what mixed fluorescent substance with the translucent base material is preferable.
As the base material, a resin material, an inorganic material such as glass, or the like can be used. In particular, as a resin material, a silicone resin, a modified silicone resin, an epoxy resin, a modified epoxy resin, an acrylic resin, a hybrid resin containing at least one of these resins, or the like can be used.
Various phosphors can be used as long as the phosphors can absorb light from the semiconductor layer 5 and emit light of another wavelength. For example, nitride phosphors and oxynitride phosphors mainly activated by lanthanoid elements such as europium and cerium, more specifically, α or β sialon phosphors activated by europium, various alkalis Earth metal nitride silicate phosphors, lanthanoid elements such as europium, alkaline earth metal halogenapatite phosphors mainly activated by transition metal elements such as manganese, alkaline earth halosilicate phosphors, alkaline earth metals Silicate phosphor, alkaline earth metal halogen borate phosphor, alkaline earth metal aluminate phosphor, alkaline earth metal silicate, alkaline earth metal sulfide, alkaline earth metal thiogallate, alkaline earth metal nitride Rare earth aluminate mainly activated by lanthanoid elements such as silicon, germanate, cerium, Examples thereof include organic substances and organic complexes mainly activated with lanthanoid elements such as rare earth silicates or europium. In particular, a YAG phosphor that is a yellow phosphor, a KSF that is a red phosphor, a LAG phosphor that is a green phosphor, and the like are preferably used. In addition, phosphors having similar performance and effects can be used as appropriate. A fluorescent substance can be used individually or in mixture of 2 or more types.
The density | concentration of fluorescent substance is adjusted so that the light-emitting device 100 may become a desired luminescent color. The concentration of the phosphor can be, for example, about 5 to 50%. If the concentration is increased on the lower side of the first sealing member 40, the light emitted from the light emitting device 100 can be hardly scattered.

In the present embodiment, the first sealing member 40 is easily formed by dripping and curing a liquid phosphor resin in which a phosphor as a base material is contained in the recess 20a of the light reflecting member 20. can do. Further, the first sealing member 40 is formed by adhering a sheet-like phosphor sheet (or phosphor plate, the same applies hereinafter) in which a phosphor is contained in a resin as a base material to the upper surface 5a of the semiconductor layer. It may be formed. For the adhesion, for example, an adhesive such as a translucent silicone resin may be used. In particular, when a phosphor sheet having flexibility in a semi-cured state is used, the upper surface 5a of the semiconductor layer can be easily covered because it deforms along the shape of the formation region.
The phosphor sheet may be cut in advance corresponding to the size of the upper surface 5a of the semiconductor layer and the size of the light emitting device 100. However, when the support 11 is a collective substrate, the phosphor sheet is connected on the support. By covering the plurality of light emitting elements 9 together, mass productivity can be improved. In addition, when separated into pieces in advance, it is preferable that the size is the same as or larger than the upper surface 5a of the exposed semiconductor layer so as to cover the entire upper surface 5a of the exposed semiconductor layer. The first sealing member 40 may be provided at a position away from the semiconductor layer 5.

Alternatively, the first sealing member 40 can be provided by spraying. By doing so, the thin 1st sealing member 40 of about 5-50 micrometers can be formed, for example, and a light-emitting device with high light extraction efficiency can be formed. Further, the light-emitting device can be adjusted to a desired light emission color, and the yield can be improved. In addition, the first sealing member 40 can be formed using various methods such as electrodeposition, printing, compression molding, transfer molding, and the like.
The upper surface of the first sealing member 40 formed by the method as described above may be a substantially flat surface as shown, or may have irregularities, inclinations, and curved surfaces.

(Reflective layer forming process)
In the present embodiment, as shown in FIG. 9A, the reflective layer 50 can be formed on the wall 20b. By forming the reflective layer 50, light can be reflected more efficiently upward. The reflective layer 50 is preferably a member having a higher reflectance than the light reflecting member 20.
Specifically, for example, a mask is formed on the upper surface 5a of the semiconductor layer so that the reflective layer 50 does not cover the upper surface 5a of the semiconductor layer, and the wall portion 20b is sprayed, sputtered, printed, applied, or the like by an appropriate desired method. The reflective layer 50 is formed. Similarly, the inclination of the inclined surface 1ca on the side surface of the substrate is larger as the inclination of the wall 20b is larger (that is, the angle formed by the inner surface of the wall 20b and the upper surface 5a of the semiconductor layer is larger in a cross-sectional view) (that is, In the first embodiment, the larger the angle between the inclined surface 1ca of the substrate and the lower surface 1b of the substrate is, the easier it is to form the reflective layer 50 on the wall portion 20b.

  The reflective layer 50 can be formed of a metal material or an insulating material having a high light reflectance. Examples of the metal material include silver, a silver alloy, aluminum, and gold. In particular, a silver alloy excellent in oxidation resistance is preferable. The thickness of the reflective film 50 is not particularly limited, and can be a thickness (for example, about 20 nm to about 1 μm) that can effectively reflect the light emitted from the semiconductor layer 5. As the insulating material, a resin obtained by adding a light reflective material can be used. A reflection film can be formed by applying a light-reflective material added to a liquid resin before curing to the surface of the wall and then curing it. As the resin material, for example, a silicone resin, a modified silicone resin, an epoxy resin, a modified epoxy resin, an acrylic resin, a urea resin, a fluororesin, or a hybrid resin including at least one of these resins can be used. Examples of the light reflecting material include titanium oxide, zinc oxide, aluminum oxide, titanium dioxide, silicon dioxide, zirconium dioxide, potassium titanate, alumina, aluminum nitride, boron nitride, mullite, niobium oxide, various rare earth oxides (for example, Yttrium oxide, gadolinium oxide) and the like can be used. By increasing the addition amount of the light reflective material, the reflectance of the reflective layer can be increased. Preferably, the addition amount of the light reflective material can be adjusted so that the reflectance with respect to light emitted from the semiconductor layer 5 is 60% or more, more preferably 70%, 80%, or 90% or more. Thereby, the light from the semiconductor layer 5 can be reflected efficiently.

  As shown in FIG. 9B, after forming the reflective layer 50 on the wall 20b, the first sealing member 40 containing the phosphor in the recess 20a is formed, so that the first sealing member 40 has a wavelength. The converted light can be efficiently reflected to the light exit surface side.

(Second sealing member forming step)
As shown in FIG. 10, the light emitting device 100 may form a second sealing member 60 that further seals the first sealing member 40 and the light reflecting member 20. By providing the second sealing member 60, the light emitting device 100 having desired light distribution characteristics can be formed. The second sealing member 60 can be formed, for example, by transfer molding a translucent resin on the first sealing member 40 or the reflective layer 50 provided in the recess 20a. In addition, the second sealing member 60 may be formed by a dropping method or the like. As a material of the second sealing member 60, an epoxy resin, a silicone resin, glass or the like can be used, and a silicone resin is particularly preferable from the viewpoint of transparency, translucency, and heat resistance. The formation of the second sealing member 60 can be performed by transfer molding, potting, spin coating, compression molding, or the like.

  Although the shape of the 2nd sealing member 60 is not specifically limited, In order to improve the light extraction efficiency from the light emitting element 9, it is preferable to provide in the substantially hemispherical shape centering on the light emitting element 9. FIG. Further, if the upper surface of the second sealing member 60 is formed to be substantially flat, the light emitting device 100 can be thinned. Further, the second sealing member 60 may contain a phosphor.

(Individualization process)
After performing the first to fifth steps and appropriately performing the other steps described above, the support 11 that is an aggregate substrate on which the plurality of light emitting elements 9 are mounted is cut into individual pieces to obtain desired light emission. Device 100 can be obtained. For example, dicing as shown in FIG. 11A can complete the light emitting device 100 in which the light reflecting member 20 forms the outer surface.
When the light emitting device is formed in this way, the wall portion 20b (light reflecting member) can be formed to a desired thickness, and thus the light emitting device 100 can be made small while preventing light from leaking to the side of the light emitting element. Is possible. For example, the thickness A of the light reflecting member 20 can be set to about 30 to 730 μm or more, for example, about 120 to 210 μm in the thick part (that is, the side of the semiconductor layer 5), and thin part (that is, the upper part of the substrate 1). Is preferably about 30 to 50 μm.

  As described above, according to the manufacturing method of the present embodiment, the light emitting device 100 capable of realizing high light extraction can be easily manufactured. In the present embodiment, since the substrate 1 is removed from the light emitting device 100, it is possible to eliminate the loss of light due to the reflection and attenuation of light within the substrate. Further, by removing the substrate 1, The light reflecting member 20 can be formed with a concave portion 20a including a wall portion 20b surrounding the semiconductor layer 5. Since the wall portion 20b (light reflecting member 20) becomes higher from the upper end portion of the semiconductor layer 5 toward the outside, the light from the semiconductor layer 5 can be efficiently reflected. Further, the concave portion 20a and the wall portion 20b as described above have a shape in which the side surface 1c of the substrate is provided with an inclined surface 1ca that inclines outward from the lower surface 1b side of the substrate toward the upper surface 1a side. After coating with the light reflecting member 20, it can be easily formed by removing the substrate 1.

<< Embodiment 2 >>
In the second embodiment, in the third step, the structure 7 and the support 11 are electrically connected using the anisotropic conductive member 21 containing the light reflective material 24. At this time, the anisotropic conductive member 21 is scooped up so as to cover the inclined surface 1ca of the substrate, thereby forming the anisotropic conductive member 21 as the light reflecting member 20 as shown in FIG. be able to. That is, in Embodiment 2, the third step and the fourth step can be performed at a time, and the light emitting device 200 can be manufactured with a small number of steps, which is preferable from the viewpoint of manufacturing efficiency. In addition, about the structure and manufacturing method of a light-emitting device other than that, it can be substantially the same as the light-emitting device 100 of Embodiment 1, and description is abbreviate | omitted suitably.

  In the method for manufacturing the light emitting device 200 according to the second embodiment, first, similarly to the first embodiment, the desired structure 7 and the support 11 are prepared in the first step and the second step. Then, as shown in FIG. 12, in the third step, the anisotropic conductive member 21 containing the light reflective material 24 is supplied onto the n-side wiring 11 a and the p-side wiring 11 b of the support 11. Subsequently, the n-side electrode 6a and the p-side electrode 6b of the structure 7 are aligned and arranged on the supplied anisotropic conductive member 21, and heated and pressurized with a heat tool or the like. By doing so, as shown in FIG. 13, the anisotropic conductive member 21 is formed so as to fill between the structure 7 and the support 11, and the structure 7 and the support 11 are bonded. Furthermore, at least one conductive particle 22 in the anisotropic conductive member 21 is sandwiched between each electrode and the wiring, and bonded in a state where pressure is applied, so that the structure 7 and the support are supported. The body 11 is electrically connected. Here, the anisotropic conductive member 21 is formed and cured so as to cover the inclined surface 1ca of the substrate. Note that the anisotropic conductive member 21 may be cured by using a heat tool that simultaneously heats and pressurizes from the substrate 1 side of the structure 7 as in this embodiment, or a device that performs different heating and pressurization. May be used. For example, pressurization can be performed from the substrate 1 side, and heating can be performed from the support 11 side by a hot plate or the like.

  As a material for the anisotropic conductive member 21, it is preferable to use an anisotropic conductive paste (ACP) that is liquid before curing. That is, the anisotropic conductive paste (ACP) can be scooped up so as to cover the inclined surface 1ca of the substrate by heating and pressurization when the structure 7 and the support 11 are electrically connected. The light reflecting member 20 can be efficiently formed. When using an anisotropic conductive paste (ACP), in addition to using dispense, it can be supplied onto the support by printing or the like.

  In the present embodiment, an anisotropic conductive paste (ACP) that is liquid before curing is used as the anisotropic conductive member 21. The anisotropic conductive paste (ACP) includes a binder resin 23, conductive particles 22 dispersed in the binder resin 23, and a light reflective material 24. The binder resin 23 may be a thermosetting resin such as an epoxy resin, a silicone resin, or a hybrid resin thereof, and may be mixed with a thermoplastic resin. In particular, a silicone resin or a hybrid silicone resin can be suitably used because of high light resistance and heat resistance.

  The electroconductive particle 22 can be comprised with the insulating core (for example, resin ball) and the electroconductive coating layer which coat | covers a core. In addition, the conductive particles 22 are obtained by further covering the above-described conductive particles with an insulating coating layer, a conductive core (for example, a metal ball), and covering the conductive core with another conductive coating layer. And the like can be used as appropriate. As a material for the conductive coating layer and the conductive core, a metal such as gold, nickel, lead-free solder, or the like can be used. The conductive coating layer 22b can be formed on the surface of an insulating core made of resin by electroless plating, electrolytic plating, mechanofusion (mechanochemical reaction), or the like. The insulating core and the insulating coating film can be formed of any appropriate resin such as methacrylic resin.

  As the light reflective material 24, a material having a light reflectance higher than that of at least conductive particles can be used. Examples of such materials include titanium oxide, zinc oxide, aluminum oxide, titanium dioxide, silicon dioxide, zirconium dioxide, potassium titanate, alumina, aluminum nitride, boron nitride, mullite, niobium oxide, various rare earth oxides (for example, Yttrium oxide, gadolinium oxide) and the like can be used. It is particularly preferable that the light reflective material 24 is one kind of oxide selected from the group consisting of titanium, xerium, niobium, and aluminum because the refractive index difference with the binder resin 23 becomes high. Further, by adding the light reflective material 24 to the anisotropic conductive member 21, the hardness of the anisotropic conductive member 21 after curing can be increased, and the semiconductor layer 5 is cracked when the substrate described later is removed. Can be prevented.

In addition to the conductive particles 22, the anisotropic conductive member 21 may have a joining auxiliary material that assists electrical connection. Examples of such a material include fine particles of gold-tin, tin-copper, tin-silver-copper, tin-palladium solder, tin, and the like, when the anisotropic conductive member 21 is bonded (heated). And is provided between the electrode and the wiring. By using such a bonding auxiliary material, the bonding strength between the structure 7 and the support 11 can be further improved, and the heat dissipation can be further improved.
In addition, the anisotropic conductive member 21 may contain additives such as a curing accelerator, a viscosity modifier, and a filler that adjusts the hardness after curing.

  In addition, the composition of the anisotropic conductive member 21 (the content ratio of the conductive particles 22, the binder resin 23, and the light reflecting material 24), the average particle size of the conductive particles 22 (the core particle size, the coating film) The (thickness) etc. can be appropriately selected. For example, the particle diameter of the conductive particles 22 in the present embodiment is such that the electrode close to the support 11 (specifically, the p-side electrode 6b) and the wiring connected to the electrode (specifically, the p-side wiring 11b). ) Is preferably provided to be smaller than the total thickness. Specifically, the conductive particles 22 are made conductive by making the particle size of the conductive particles 22 smaller than the thickness of the n-side wiring 11a and the p-side wiring 11b or the thickness of the n-side electrode 6a and the p-side electrode 6b on the insulating layer 62. It is possible to prevent the conductive particles 22 from being pressed and electrically connected in unnecessary portions such as between the wirings. For example, when the conductive particles 22 having a particle diameter of about 1 to 20 μm are used, it is possible to prevent leakage between the conductive particles, and the conductive particles 22 can be well distributed in the binder resin 23. . In addition, when the structure 7 and the support 11 are pressure-bonded, damage to the structure 7 can be reduced. In particular, it is preferable to use a particle having a particle diameter smaller than the thickness of the electrode of the structure 7 because a short circuit between the structure 7 and the support 11 can be prevented.

  The supply amount and viscosity of the anisotropic conductive member 21 are not particularly limited as long as they can satisfy the space between the structure 7 and the support 11, but are provided outside the outer edge of the structure 7 in plan view. Supply possible quantity. Further, the supply amount and the viscosity are adjusted so as to cover the inclined surface 1ca of the substrate and not to cover the upper surface 1a of the substrate. In the present embodiment, since the side surface 1c of the substrate includes the inclined surface 1ca that is inclined outward from the lower surface 1b side to the upper surface 1a side, the anisotropic conductive member 21 (ACP) extends to the upper surface 1a of the substrate. It is difficult to go up and the substrate 1 is easily removed in the fifth step.

  The thickness of the anisotropic conductive member 21 that joins the structure 7 and the support 11 is preferably about 1 to 5 μm, for example, between the n-side electrode 6a and the p-side wiring 6b. Thereby, the semiconductor layer 5 is firmly held, the removal of the substrate 1 described later is facilitated, and the heat dissipation from the semiconductor layer 5 to the support 11 can be improved.

  The anisotropic conductive member 21 preferably has a Shore hardness of D80 or higher after curing. By using a relatively hard material as described above, the structure 7 can be firmly supported, and the semiconductor 5 can be prevented from cracking at the time of laser lift-off described later. In addition, reliability can be improved even during use of the light emitting device 100.

  As mentioned above, in this embodiment, although the example which uses the anisotropic conductive member 21, especially an anisotropic conductive paste (ACP) for the electrical connection of the structure 7 and the support body 11 was shown, other anisotropic conductive films ( ACF) may be used. An anisotropic conductive film (ACF) is preferable from the viewpoint of removing the substrate in the fifth step because it is difficult to creep up to the upper surface 1a of the substrate when the structure 7 and the support 11 are electrically connected.

  In the second embodiment, after the light reflecting member 20 is formed by the anisotropic conductive member 21, the substrate 1 is removed in the fifth step, and other steps are appropriately performed, so that a desired one as shown in FIG. 14A is obtained. The light emitting device 200 can be completed. As shown in FIGS. 14A and 14B, when the thickness B of the light reflecting member 20 (anisotropic conductive member 21) of Embodiment 2 is about 30 to 350 μm or more, the light reflecting surface does not transmit light. It is preferable because it can be reflected to the side. This thickness B can be appropriately adjusted by adjusting the supply amount and viscosity of the anisotropic conductive member 21, the heating temperature, and the pressurizing pressure.

  As described above, when the light reflecting member 20 is formed by scooping up the light-reflective anisotropic conductive member 21 or the like on the inclined surface 1ca of the substrate, the light reflecting member 20 is formed in the third step. Therefore, it is preferable from the viewpoint of manufacturing efficiency. In addition, the light emitting device 200 according to the manufacturing method of Embodiment 2 has a semiconductor layer more than the light emitting device 300 using the structure 7 having a substrate whose side surface is substantially perpendicular to the lower surface (having no inclined surface). The light leaking from 5 to the side can be suppressed (see FIGS. 15 and 16). That is, since the light emitting device 200 of Embodiment 2 shown in FIG. 15 has the inclined surface 1ca of the substrate, the thickness B (particularly the upper part) of the light reflecting member 20 (anisotropic conductive member 21) is shown in FIG. It is easy to form thicker than the thickness B of the light reflecting member 20 (anisotropic conductive member 21) of the light emitting device 300 to be manufactured. Therefore, it is possible to more reliably reflect the light from the semiconductor layer 5 to the light emitting surface side.

Example 1
In this example, the light emitting device 100 is manufactured according to the first embodiment.

  First, a sapphire substrate wafer is used as the substrate 1, and the following semiconductor layers 5 are sequentially grown on the MOCVD reactor. First, an AlGaN buffer layer and a non-doped GaN layer are stacked on a sapphire substrate 1 having irregularities. Next, a Si-doped GaN layer is laminated thereon as an n-type contact layer, and a non-doped GaN layer and a Si-doped GaN layer are alternately laminated in a total of five layers as an n-type cladding layer. A superlattice structure of an undoped InGaN layer is formed, and an n-type semiconductor layer 2 composed of these layers is formed. On this n-type semiconductor layer, a Si-doped GaN barrier layer and a non-doped GaN barrier layer are sequentially laminated, and further, nine layers of InGaN well layers and InGaN barrier layers are repeatedly laminated to form a multiple quantum well structure. An active layer 3 composed of these layers is formed. On this active layer, an Mg-doped AlGaN layer as a p-type cladding layer and an Mg-doped GaN layer as a p-type contact layer are sequentially laminated to form a p-type semiconductor layer 4 composed of these layers. As described above, a wafer in which the semiconductor layer 5 is laminated on the substrate is obtained.

Next, the n-type semiconductor layer 2, the active layer 3, and the p-type semiconductor layer 4 are partially removed by etching to expose the n-type semiconductor layer 2. At this time, the surface of the lower surface 1b (semiconductor layer forming surface) of the substrate is exposed by about 300 to 350 μm. Thereafter, on the uppermost p-type contact layer (on the light emitting region) and on the exposed n-type contact layer, a p-side conductive member 61b and an n-side conductive member 61a are sequentially formed from the semiconductor layer 5 side by ITO (about 120 nm). ) / Rh (about 100 nm) / Au (about 550 nm) / Rh (about 100 nm). Further, a DBR film made of a laminate of SiO ₂ and Nb ₂ O ₅ is formed with a thickness of about 1 μm as the insulating layer 62 so as to cover the semiconductor layer 5, the n-side conductive member 61a, and the p-side conductive member 61b. Thereafter, through holes are provided in the insulating layer 62 to expose the n-side conductive member 61a and through-holes to expose the p-side conductive member 61b.

Then, AlSiCu alloy (about 500 nm) / Ti (about 200 nm) / Pt (about 500 nm) are sequentially formed on the insulating layer 62 and the n-side conductive member 61a and the n-side conductive member 61b exposed in the through holes from the semiconductor layer 5 side. ) / Au (about 500 nm) n-side electrode 6a and p-side electrode 6b are formed by sputtering. The through holes are filled with the n-side electrode 6a and the p-side electrode 6b, respectively. Thereafter, a protective film having through holes for conduction is formed on the n-side electrode 6a and the p-side electrode 6b with SiO ₂ (about 300 nm). The difference in height between the n-side electrode 6a and the p-side electrode 6b is about 2 μm at the maximum portion. The n-side electrode 6a and the p-side electrode 6b are provided in a substantially rectangular shape of about 300 μm × 800 μm in plan view, and are arranged so as to be symmetric with respect to the center line of the singulated light emitting device. ing.
Thereafter, a blade 10 having an inclination of about 20 ° to 30 ° on both sides with respect to the center line C of the blade edge is prepared, and dicing is performed from the lower surface 1b side of the substrate while the wafer is fixed. By doing so, the substrate of the structure has an upper surface 1a of about 1.0 mm × 1.0 mm, a lower surface 1b of about 0.85 mm × 0.85 mm, and an inclination angle formed by the lower surface 1b of the substrate and the side surface 1c of about 135 °. And is separated into individual structures. The thickness of the separated structure 7 is about 150 μm.

  Then, a collective substrate having an aluminum nitride base material 11c in which 20 × 30 support bodies 11 of about 1.4 mm × 1.4 mm having n-side wirings 11a and p-side wirings 11b on the same surface are connected. Are prepared, and a solder paste containing Au-Sn (80:20) solder is dispensed onto each wiring provided with a thickness of about 25 μm. It is preferable that the solder paste contains flux in addition to the solder. Then, the structure 7 produced above is turned upside down, placed in alignment with the support 11, reflowed and heated. Specifically, heating is performed at about 280 to 300 °. As a result, the n-side electrode 6 a and the p-side electrode 6 b are electrically connected to the n-side wiring 61 a and the p-side wiring 61 b, and the structure 7 is flip-chip mounted on the support 11.

  Thereafter, an underfill is filled between the structure 7 and the support 11, and an excimer laser (wavelength of about 248 nm) is irradiated from the upper surface 1a side of the sapphire substrate 1, and the substrate 1 is formed at the boundary between the AlGaN layer and the non-doped GaN layer. The light emitting element 9 is formed by separating the semiconductor layer 5 and the semiconductor layer 5. By separating the substrate 1, a recess 20 a is formed in the light reflecting member 20. The concave portion 20a is made of a wall portion 20b, and the wall portion 20b becomes higher from the upper end portion of the semiconductor layer 5 toward the outside. The depth of the recess 20b is about 150 μm, which is the same as the thickness of the removed substrate 1. Thereafter, the collective substrate 21 is immersed in a TMAH solution, and the upper surface of the semiconductor layer 5 is etched and roughened. And it wash | cleans with a pure water and removes a TMAH solution.

  Thereafter, a reflection layer 50 of, for example, about 0.1 μm thick Ag (member, thickness, etc.) is provided on the wall 20b by sputtering or the like, and a phosphor resin in which a YAG phosphor is contained in a liquid silicone resin is formed in the recess. After forming by a dropping method or spraying, the first sealing member 40 is formed by curing. Finally, in order to obtain the light emitting device 100, the support 11 is cut by dicing in units of each support. The completed light emitting device 100 is about 1.2 mm × about 1.2 mm when viewed from the light emitting surface side, has a light emitting surface of about 1.0 × 1.0 mm, and has a wall thickness A of about 0.05 to 0.2 mm. The height of the light emitting device is about 0.55 mm, and the light reflecting member 20 forms the outer surface of the light emitting device 100. The light emitting surface of the light emitting device 100 is the upper surface of the first sealing member 40, and the upper surface of the first sealing member 40 and the upper surface of the light reflecting member 20 are substantially flush with each other.

  Through the above steps, the light-emitting device 100 of Embodiment 1 can be manufactured.

DESCRIPTION OF SYMBOLS 1 ... Board | substrate, 1a ... Upper surface, 1b ... Lower surface, 1c ... Side surface, 1ca ... Inclined surface 2 ... 1st (n-type) semiconductor layer 3 ... Active layer 4 ... 2nd (p-type) semiconductor layer 5 ... Semiconductor layer, 5a ... upper surface 6a (semiconductor layer) ... n-side electrode, 6b ... p-side electrode 61a ... n-side conductive member, 61b ... p-side conductive member 62 ... insulating layer 7 ... structure 9 ... light emitting element 10 ... blade 11 ... support 11a ... n-side wiring, 11b ... p-side wiring, 11c ... base material 20 ... light reflecting member, 20a ... concave portion, 20b ... wall portion, 20ba ... upper surface 21 (of wall portion) ... anisotropic conductive member 22 ... conductive Particles 23 ... binder resin 24 ... light reflective material 25 ... conductive adhesive (solder)
40 ... 1st sealing member 50 ... Reflective layer 60 ... 2nd sealing member 100 ... Light-emitting device A ... Thickness B of the light reflection member (of Embodiment 1) ... (Embodiment 2) Light reflection member (anisotropic) Conductive member) thickness C ... center line of blade edge (of blade)

Claims (9)

A method of manufacturing a light emitting device in which a light emitting element is flip-chip mounted on a support,
A semiconductor layer including a first semiconductor layer and a second semiconductor layer on the lower surface side of the substrate having an upper surface, a lower surface, and a side surface including an inclined surface inclined outward from the lower surface side toward the upper surface side. And a first step of preparing a structure in which an n-side electrode electrically connected to the first semiconductor layer and a p-side electrode electrically connected to the second semiconductor layer are formed. ,
a second step of preparing a support having an n-side wiring and a p-side wiring on the same surface;
A third step of electrically connecting the n-side electrode and the p-side electrode of the structure and the n-side wiring and the p-side wiring of the support, respectively;
A fourth step of covering the inclined surface of the side surface of the substrate with a light reflecting member,
After the fourth step, by removing the substrate from the structure, the light reflecting member is formed with a recess having a wall portion that rises outward from the upper end portion of the semiconductor layer. The manufacturing method of the light-emitting device characterized by including a process.   The method for manufacturing a light emitting device according to claim 1, wherein the light reflecting member is an anisotropic conductive member.   The method for manufacturing a light emitting device according to claim 1, wherein the light reflecting member is filled between the structure and the support.   4. The method for manufacturing a light emitting device according to claim 1, wherein, in the fifth step, the substrate is removed from the structure by irradiating a laser having a wavelength that transmits the substrate. 5.   The manufacturing method of the light-emitting device of any one of Claims 1-4 which forms a sealing member in the said recessed part.   The manufacturing method of the light-emitting device of any one of Claims 1-5 which forms a reflection layer in the said wall part.   The method for manufacturing a light emitting device according to claim 1, wherein the light reflecting member forms an outer surface of the light emitting device.   The manufacturing method of the light-emitting device of any one of Claims 1-7 which forms the substantially flat surface of the said light reflection member in the light-projection surface of a light-emitting device. In the second step, the support is prepared as a collective substrate in which a plurality are connected,
In the third step, the plurality of structures and the collective substrate are electrically connected,
9. The method for manufacturing a light-emitting device according to claim 1, wherein after the fifth step, the light-emitting device is separated into pieces by cutting the collective substrate and the light reflecting member.

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