KR101940617B1 - Light emitting device package and light emitting module - Google Patents

Abstract

An embodiment discloses a light emitting device package.
A light emitting device package according to an embodiment includes: a body having a cavity; A plurality of lead frames disposed in the cavity; A light emitting element disposed on the plurality of lead frames; A plurality of adhesive members disposed between the light emitting element and the plurality of lead frames; A translucent resin layer disposed in the cavity; And a light-emitting resin layer and a phosphor layer disposed on the light-emitting element, wherein the light-emitting element comprises: a light-emitting structure; A reflective electrode layer; A first electrode structure having a plurality of conductive layers; A second electrode structure disposed below the reflective electrode layer and having a plurality of conductive layers; An insulating layer disposed between the light emitting structure, the first electrode structure, and the second electrode structure; At least one first connection electrode disposed under the first electrode structure and electrically connected to the first lead frame; At least one second connection electrode disposed under the second electrode structure and electrically connected to the second lead frame; And a support member disposed around the at least one first connection electrode and the at least one second connection electrode.

Description

TECHNICAL FIELD [0001] The present invention relates to a light emitting device package and a light emitting module,

An embodiment relates to a light emitting device package and a light emitting module.

III-V nitride semiconductors (group III-V nitride semiconductors) are widely recognized as key materials for light emitting devices such as light emitting diodes (LEDs) and laser diodes (LD) due to their physical and chemical properties. The III-V group nitride semiconductors are usually made of a semiconductor material having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + y?

BACKGROUND ART Light emitting diodes (LEDs) are a kind of semiconductor devices that convert the electric power to infrared rays or light using the characteristics of compound semiconductors, exchange signals, or use as a light source.

 LEDs or LDs using such nitride semiconductor materials are widely used in light emitting devices for obtaining light, and they have been applied as light sources for various products such as a key pad light emitting portion of a cellular phone, a display device, an electric sign board, and a lighting device.

The embodiment provides a new light emitting device package.

Embodiments provide a light emitting device package including a light emitting device packaged at a wafer level and a phosphor layer spaced from the light emitting device.

Embodiments provide a light emitting device package having a light emitting device having a supporting member having a ceramic material additive and a light emitting module having the same.

Embodiments provide a light emitting module, a light emitting device package, and a lighting device having a light emitting element.

A light emitting device package according to an embodiment includes: a body having a cavity; A plurality of lead frames disposed in the cavity; A light emitting element disposed on the plurality of lead frames; A plurality of adhesive members disposed between the light emitting element and the plurality of lead frames; A translucent resin layer disposed in the cavity; And a phosphor layer disposed on the light-transmissive resin layer and the light-emitting element, wherein the light-emitting element includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer below the first conductivity type semiconductor layer, A light emitting structure including an active layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; A reflective electrode layer under the second conductive semiconductor layer; A first electrode structure disposed under the first conductive semiconductor layer and having a plurality of conductive layers; A second electrode structure disposed below the reflective electrode layer and having a plurality of conductive layers; An insulating layer disposed between the light emitting structure, the first electrode structure, and the second electrode structure; At least one first connection electrode disposed under the first electrode structure and electrically connected to the first lead frame; At least one second connection electrode disposed under the second electrode structure and electrically connected to the second lead frame; And a support member disposed around the at least one first connection electrode and the at least one second connection electrode.

A light emitting device package according to an embodiment includes: a body having a cavity; A plurality of lead frames disposed in the cavity; A light emitting element disposed on the plurality of lead frames; A plurality of adhesive members disposed between the light emitting element and the plurality of lead frames; And a phosphor layer covering the light emitting device and having a plurality of layers having different phosphor contents stacked in the cavity, wherein the light emitting device includes a first conductive semiconductor layer, a second conductive semiconductor layer below the first conductive semiconductor layer, A light emitting structure including a conductive semiconductor layer and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer; A reflective electrode layer under the second conductive semiconductor layer; A first electrode structure disposed under the first conductive semiconductor layer and having a plurality of conductive layers; A second electrode structure disposed below the reflective electrode layer and having a plurality of conductive layers; An insulating layer disposed between the light emitting structure, the first electrode structure, and the second electrode structure; At least one first connection electrode disposed under the first electrode structure and electrically connected to the first lead frame; At least one second connection electrode disposed under the second electrode structure and electrically connected to the second lead frame; And a support member disposed around the at least one first connection electrode and the at least one second connection electrode.

Embodiments can improve the light extraction efficiency of the light emitting device package by separating the phosphor layer from the light emitting device packaged at the wafer level.

The embodiment can improve the heat radiation efficiency of the light emitting device of the light emitting device package.

The embodiment can improve the current supplied to the light emitting device of the light emitting device package.

The embodiment can improve the reliability of a light emitting device package, a display device, and a lighting device having a light emitting device mounted in a flip manner.

1 is a side sectional view of a light emitting device according to a first embodiment.
2 is a bottom view of the light emitting device of FIG.
FIGS. 3 to 5 are views showing the first electrode and the second electrode structure of FIG. 1. FIG.
6 to 11 are views showing a manufacturing process of the light emitting device according to the first embodiment.
12 is a side cross-sectional view of a light emitting device according to the second embodiment.
13 and 14 are a side sectional view and a bottom view of the light emitting device according to the third embodiment.
15 and 16 are a side sectional view and a bottom view of the light emitting device according to the fourth embodiment.
17 is a side sectional view showing a light emitting device according to a fifth embodiment.
18 is a side sectional view showing a light emitting device according to the sixth embodiment.
19 is a side sectional view showing a light emitting device according to the seventh embodiment.
20 is a side sectional view showing a light emitting device according to an eighth embodiment.
21 is a side sectional view showing a light emitting device package according to the ninth embodiment.
22 is a side sectional view showing a light emitting device package according to the tenth embodiment.
23 is a side sectional view showing a light emitting device package according to the eleventh embodiment.
24 is a side sectional view showing a light emitting device package according to a twelfth embodiment.
25 is a side sectional view showing a light emitting device package according to the thirteenth embodiment.
26 is a cross-sectional side view showing a light emitting device package according to the fourteenth embodiment.
27 is a side sectional view showing a light emitting device package according to a fifteenth embodiment.
28 is a side sectional view showing a light emitting device package according to the sixteenth embodiment.
29 is a side sectional view showing a light emitting device package according to a seventeenth embodiment.
30 is a side sectional view showing a light emitting device package according to an eighteenth embodiment.
31 is a side sectional view showing a light emitting device package according to a nineteenth embodiment.
32 is a side sectional view showing a light emitting device package according to a comparative example.
33 is a graph comparing luminous fluxes according to the currents of the embodiment and the comparative example.
34 is a graph comparing the input current and the forward voltage in the embodiment and the comparative example.
35 is a view showing the color distribution of the embodiment and the comparative example.
36 is a view showing a display device having a light emitting element according to the embodiment.
37 is a view showing another example of a display device having a light emitting element according to the embodiment.
38 is a view showing a lighting device having a light emitting device according to the embodiment.

In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be formed "on" or "under" a substrate, each layer The terms " on "and " under " include both being formed" directly "or" indirectly " Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. Also, the size of each component does not entirely reflect the actual size.

Hereinafter, the present invention will be described with reference to the accompanying drawings.

FIG. 1 is a side sectional view showing a light emitting device according to a first embodiment, and FIG. 2 is a view showing an example of a bottom view of the light emitting device of FIG.

1 and 2, the light emitting device 100 includes a substrate 111, a light emitting structure 120, a reflective electrode layer 130, a first insulating layer 121, a first electrode structure having a plurality of conductive layers, A second electrode structure having a plurality of conductive layers 132, 134 and 136, a second insulating layer 123, a first connecting electrode 141, a second connecting electrode 143 and a supporting member 151 .

The substrate 111 may be formed of a material of the light transmissive, insulating or conductive, e.g., sapphire (Al ₂ O _3), SiC, Si, GaAs, GaN, ZnO, Si, GaP, InP, Ge, Ga ₂ O ₃ may be used. At least one of the upper surface and the lower surface of the substrate 111 may have a light extracting structure such as a concavo-convex pattern. The concavo-convex pattern may be formed through etching of the substrate 111, Can be formed. The concavo-convex pattern may include a stripe shape or a convex lens shape.

A first semiconductor layer 113 may be formed under the substrate 111. The first semiconductor layer 113 may selectively include Group II to VI compound semiconductors such as II-VI compound semiconductors or III-V compound semiconductors. The first semiconductor layer 113 may be formed of at least one layer or a plurality of layers by selectively using group II-VI compound semiconductors. The first semiconductor layer 113 may include at least one of a semiconductor using a Group III-V compound semiconductor, for example, GaN, InN, AlN, InGaN, AlGaN, InAlGaN and AlInN. The first semiconductor layer 113 may be formed of an oxide such as a ZnO layer, but is not limited thereto.

The first semiconductor layer 113 may be formed of a buffer layer, and the buffer layer may reduce a difference in lattice constant between the substrate 111 and the nitride semiconductor layer. The first semiconductor layer 113 may be formed of an undoped semiconductor layer. The undoped semiconductor layer may be formed of a Group III-V compound semiconductor, for example, a GaN-based semiconductor. The undoped semiconductor layer has a first conductivity type characteristic even when the conductive dopant is intentionally not doped in the fabrication process and has low conductivity lower than the conductivity type dopant concentration of the first conductive type semiconductor layer 115. The first semiconductor layer 113 may be formed of at least one of a buffer layer and an undoped semiconductor layer, or may be formed or removed.

A light emitting structure 120 may be formed under the first semiconductor layer 113. The light emitting structure 120 includes a group III-V compound semiconductor, and may include, for example, In _x Al _y Ga _1-xy N (0 x 1, 0 y 1, 0 x + y 1) Has a semiconductor having a composition formula and emits a predetermined main peak wavelength within a wavelength range from the ultraviolet band to the visible light band.

The light emitting structure 120 includes a first conductive semiconductor layer 115, a second conductive semiconductor layer 119, and a second conductive semiconductor layer 115 between the first conductive semiconductor layer 115 and the second conductive semiconductor layer 119 And an active layer 117 formed thereon.

The first conductive semiconductor layer 115 may be disposed under the first semiconductor layer 113 or the substrate 111. [ The first conductivity type semiconductor layer 115 is an n-type semiconductor layer. The first conductivity type semiconductor layer 115 is formed of a Group III-V compound semiconductor doped with a first conductivity type dopant, The conductive dopant is an n-type dopant including Si, Ge, Sn, Se, and Te.

A superlattice structure in which different semiconductor layers are alternately stacked may be formed between the first conductive type semiconductor layer 115 and the first semiconductor layer 113. Such a superlattice structure may reduce lattice defects . Each layer of the superlattice structure may be stacked to a thickness of several A or more.

A first clad layer may be formed between the first conductive semiconductor layer 115 and the active layer 117. The first clad layer may be formed of a GaN-based semiconductor or may have a band gap wider than a band gap of the active layer 117. The first cladding layer is formed in the first conductivity type and serves to constrain carriers.

An active layer 117 is formed under the first conductive type semiconductor layer 115. The active layer 117 selectively includes a single quantum well, a multiple quantum well (MQW), a quantum wire structure, or a quantum dot structure, and includes a well layer and a barrier layer period. The well layer comprises a composition formula of _{In x Al y Ga 1 -x- y} N (0≤x≤1, 0≤y≤1, 0≤x + y≤1), and wherein the barrier layer is In _x Al _y And Ga _1-xy N (0? X? 1, 0? Y? 1, 0? X + y? 1).

The period of the well layer / barrier layer may be one or more cycles using a lamination structure of, for example, InGaN / GaN, GaN / AlGaN, InGaN / AlGaN, InGaN / InGaN, and InAlGaN / InAlGaN. The barrier layer may be formed of a semiconductor material having a band gap wider than a band gap of the well layer.

A second conductive semiconductor layer 119 is formed under the active layer 117. The second conductive semiconductor layer 119 may be formed of any one of compound semiconductors such as GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN doped with a second conductive dopant. The second conductive type semiconductor layer 119 may be a p-type semiconductor layer, and the second conductive type dopant may include Mg, Zn, Ca, Sr, and Ba as a p-type dopant.

The second conductive semiconductor layer 119 may include a superlattice structure, and the superlattice structure may include an InGaN / GaN superlattice structure or an AlGaN / GaN superlattice structure. The superlattice structure of the second conductivity type semiconductor layer 119 may protect the active layer 117 by diffusing a current contained in the voltage abnormally.

For example, the first conductivity type semiconductor layer 115 may be a p-type semiconductor layer, and the second conductivity type semiconductor layer 119 may be an n-type semiconductor layer. can do. A first conductive semiconductor layer having a polarity opposite to the second conductive type may be further disposed on the second conductive semiconductor layer 119.

The light emitting device 100 may be defined as a light emitting structure 120 of the first conductivity type semiconductor layer 115, the active layer 117 and the second conductivity type semiconductor layer 119. The light emitting structure 120 ) May be implemented by any one of an np junction structure, a pn junction structure, an npn junction structure, and a pnp junction structure. Here, p is a p-type semiconductor layer, and n is an n-type semiconductor layer, and the - includes a structure in which the p-type semiconductor layer and the n-type semiconductor layer are in direct contact or indirect contact. Hereinafter, for convenience of explanation, the lowermost layer of the light emitting structure 120 will be described as the second conductivity type semiconductor layer 119. [

A reflective electrode layer 130 is formed under the second conductive semiconductor layer 119 and the reflective electrode layer 130 reflects light emitted from the active layer 117. The reflective electrode layer 130 may be formed of a conductive material such as a metal or a metal oxide, and may be a single layer or a multilayer structure.

The reflective electrode layer 130 includes at least one of an ohmic contact layer, a reflective layer, a diffusion prevention layer, and a protective layer. The reflective electrode layer 130 may have a structure of an ohmic contact layer / a reflective layer / a diffusion barrier layer / a protective layer, a reflective layer / a diffusion barrier layer / a protective layer or an ohmic contact layer / a reflective layer / , A reflection layer / a diffusion prevention layer, or a reflection layer.

Here, the ohmic contact layer is in contact with the second conductive semiconductor layer 119, and the contact area thereof may be 70% or more of the bottom area of the second conductive semiconductor layer 119. The ohmic contact layer may include a conductive material such as a metal oxide or a metal. For example, the ohmic contact layer may include at least one selected from the group consisting of ITO (indium tin oxide), IZO (indium zinc oxide), IZTO (indium zinc tin oxide) indium gallium zinc oxide, IGTO, aluminum zinc oxide, ATO, gallium zinc oxide, SnO, InO, INZnO, ZnO, IrOx, RuOx, NiO, Ni , Cr, and an optional compound or alloy thereof, and may be formed of at least one layer. The thickness of the ohmic contact layer may be 1 to 1,000 angstroms.

The reflective layer may be selected from a metal material having a reflectivity of 70% or more below the ohmic contact layer, for example, a metal of Al, Ag, Ru, Pd, Rh, Pt, Ir and at least two of the metals. The metal of the reflective layer may be in ohmic contact with the second conductive type semiconductor layer 119, and the ohmic contact layer may not be formed. The reflective layer may have a thickness of 1 to 10,000 ANGSTROM.

The diffusion preventing layer may be selected from Au, Cu, Hf, Ni, Mo, V, W, Rh, Ru, Pt, Pd, La, Ta and Ti and alloys of two or more thereof. The diffusion barrier prevents interdiffusion at the boundaries of the different layers. The thickness of the diffusion preventing layer may be 1 to 10,000 angstroms.

The protective layer may be selected from Au, Cu, Hf, Ni, Mo, V, W, Rh, Ru, Pt, Pd, La, Ta, Ti and alloys of two or more thereof. As shown in FIG.

As another example, the reflective electrode layer 130 may include a laminate structure of a transparent electrode layer / reflective layer. The transparent electrode layer may be formed of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO) IZO (indium aluminum zinc oxide), IGZO (indium gallium zinc oxide), IGTO (indium gallium tin oxide), AZO (aluminum zinc oxide), ATO (antimony tin oxide), GZO , ZnO, IrOx, and RuOx. A reflective layer may be formed below the transparent electrode layer, and the reflective layer may be formed of a metallic or non-metallic material. Wherein the non-metallic reflective layer includes a structure in which a first layer having a first refractive index and a second layer having a second refractive index are alternately stacked in two or more pairs, the first and second refractive indices being different from each other, Layer and the second layer may be formed of a material between 1.5 and 2.4, for example, a conductive or an insulating material, and this structure may be defined as a DBR (distributed bragg reflection) structure.

A light extracting structure such as a roughness may be formed on the surface of at least one of the second conductive type semiconductor layer 119 and the reflective electrode layer 130. Such a light extracting structure may change the critical angle of incident light, , The light extraction efficiency can be improved. The light extracting structure includes a concavo-convex pattern or a structure in which a plurality of projections are formed.

The first insulating layer 121 may be formed under the reflective electrode layer 130. The first insulating layer 121 is formed on the lower surface of the second conductive type semiconductor layer 119, the side surfaces of the second conductive type semiconductor layer 119 and the active layer 117, In the lower surface of the partial area A1. The first insulating layer 121 is formed in a region of the lower region of the light emitting structure 120 excluding the reflective electrode layer 130, the first electrode 131 and the second electrode 132, 120 are electrically protected.

The first insulating layer 121 includes an insulating material or an insulating resin formed of at least one of oxides, nitrides, fluorides, and sulfides having at least one of Al, Cr, Si, Ti, Zn and Zr. The above-mentioned insulating resin includes a polyimide material. The first insulating layer 121 may be formed of, for example, SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ , or TiO ₂ . The first insulating layer 121 may be formed as a single layer or a multilayer, but is not limited thereto. The first insulating layer 121 is formed to prevent interlayer short circuiting of the light emitting structure 120 when the metal structure for flip bonding is formed below the light emitting structure 120.

The first insulating layer 121 may be formed only on the surface of the light emitting structure 120 without being formed on the bottom surface of the reflective electrode layer 130. The first insulating layer 121 may not extend to the lower surface of the reflective electrode layer 130 by forming an insulating supporting member 151 on the lower surface of the reflective electrode layer 130.

The first insulating layer 121 may be formed of a DBR structure in which first and second layers having different refractive indexes are alternately arranged, and the first layer may be formed of SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ , and TiO ₂ , and the second layer may be formed of any material other than the first layer. In this case, the reflective electrode layer may not be formed.

The first insulating layer 121 may have a thickness of about 100 to 10,000 ANGSTROM. When the first insulating layer 121 has a multilayer structure, the first insulating layer 121 may have a thickness of 1 to 50,000 ANGSTROM or a thickness of about 100 ANGSTROM to 10,000 ANGSTROM. Here, the thickness of each layer in the first insulation layer 121 of the multi-layer structure can change the reflection efficiency according to the emission wavelength.

A first electrode 131 is formed under a partial region A1 of the first conductive type semiconductor layer 115. A first junction electrode 133 is disposed under the first electrode 131, A third junction electrode 135 is disposed below the first junction electrode 133. The first electrode 131 may be used as a pad and the first junction electrode 133 and the third junction electrode 135 may be disposed between the first electrode 131 and the first connection electrode 141 . At least one of the first junction electrode 133 and the third junction electrode 135 may not be formed, but the present invention is not limited thereto.

The first electrode 131 may be in ohmic contact with the first conductive semiconductor layer 115 and may be electrically connected to the first junction electrode 133 and the third junction electrode 135.

A portion 133A of the first junction electrode 133 may be further disposed under the first insulation layer 121 disposed below the light emitting structure 120, A portion 135A of the first junction electrode 133 may be further formed under the portion 133A of the first junction electrode 133 under the light emitting structure 120. [ The width of the first junction electrode 133 and the third junction electrode 135 may be greater than or equal to the width of the first electrode 131 as viewed from the side surface of the light emitting device. The widths of the first junction electrode 133 and the third junction electrode 135 may be the same or different from each other. The width direction of the first junction electrode 133 and the third junction electrode 135 may be perpendicular to the thickness direction of the light emitting structure 120.

The first electrode 131 may be spaced apart from the side surfaces of the active layer 117 and the second conductivity type semiconductor layer 119 and may be disposed in a partial region A1 of the first conductivity type semiconductor layer 115 .

A second electrode 132 may be formed under a part of the reflective electrode layer 130. A second bonding electrode 134 is disposed under the second electrode 132 and a fourth bonding electrode 136 is disposed under the second bonding electrode 134. The second electrode 132 may be used as a pad and the second junction electrode 134 and the fourth junction electrode 136 may be disposed between the second electrode 132 and the second connection electrode 143 And they are bonded to each other. At least one of the second junction electrode 134 and the fourth junction electrode 136 may not be formed, but the present invention is not limited thereto.

The second electrode 132 may be under the reflective electrode layer 132 and may be electrically connected to the second junction electrode 134 and the fourth junction electrode 136. The width of the second junction electrode 134 and the fourth junction electrode 136 may be smaller than or equal to the width of the second electrode 132 when viewed from the side surface of the light emitting device. The widths of the second junction electrode 134 and the fourth junction electrode 136 may be equal to or different from each other.

The second electrode 132 may be physically and / or electrically contacted with the second conductive type semiconductor layer 119 through the reflective electrode layer 130. A hole may be formed in the reflective electrode layer 130, and a part of the second electrode 132 may be disposed. The second electrode 132 includes an electrode pad.

The lamination structure of the first electrode structures 131, 133, and 135 and the second electrode structures 132, 134, and 136 may be a lamination structure of a plurality of conductive layers or a stacked structure of the same conductive layers or a stacked structure of different conductive layers.

At least one of the first electrode 131 and the second electrode 132 may be formed with a current diffusion pattern such as an arm or a finger structure which is branched from the pad. The pads of the first electrode 131 and the second electrode 132 may be formed of one or more pads, but the present invention is not limited thereto. After the first conductive semiconductor layer 115 is exposed through the via structure in the light emitting structure 120, the first electrode 131 may be connected in a via structure. However, the present invention is not limited thereto.

The second insulating layer 123 may be disposed below the third junction electrode 135, and a part of the second insulating layer 123 may be in contact with the first insulating layer 121. A part of the second insulating layer 123 may be disposed in the open region P2 formed in the first and third junction electrodes 133 and 135 and may cover the periphery of the second connection electrode 143. [ Accordingly, the second insulating layer 123 separates the second connecting electrode 143 from the first and third bonding electrodes 133 and 135.

The second insulating layer 123 may be made of the same material as that of the first insulating layer 121 or may be made of another material, but the present invention is not limited thereto. The second insulating layer 123 includes an insulating material or an insulating resin formed of at least one of oxides, nitrides, fluorides, and sulfides having at least one of Al, Cr, Si, Ti, Zn, and Zr. The above-mentioned insulating resin includes a polyimide material. The second insulating layer 123 may be selectively formed of, for example, SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ , or TiO ₂ . The first insulating layer 121 may be formed as a single layer or a multilayer, but is not limited thereto.

The second insulating layer 123 may have a structure in which first and second layers having different refractive indexes are alternately arranged, and the first layer may be formed of SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ And TiO ₂ , and the second layer may be formed of any material other than the first layer. In this case, the reflective electrode layer may not be formed. The second insulating layer 123 may be formed to a thickness of 100 to 10,000 ANGSTROM. When the multilayer structure is formed, each layer may have a thickness of 1 to 50,000 ANGSTROM or 100 to 10,000 ANGSTROM per layer.

The first insulating layer 121 and the second insulating layer 123 may be formed of an insulating material such as metal oxide or a material such as polyimide or a material having the insulating material and polyimide As shown in FIG.

At least one first connection electrode 141 is disposed below the first electrode structure 131, 133, and 135, for example, below the third junction electrode 135. At least one second connection electrode 143 is disposed under the second electrode structure 132, 134, and 136, for example, below the fourth junction electrode 136.

The first connection electrode 141 and the second connection electrode 143 provide a lead function and a heat dissipation path for supplying power. The first connection electrode 141 and the second connection electrode 143 may have a columnar cross-section and may have a shape such as a sphere, a circular column, or a polygonal column or a random shape. Here, the polygonal column may be conformal or non-conformal, but is not limited thereto. The top surface or bottom surface of the first connection electrode 141 and the second connection electrode 143 may include a circular shape or a polygonal shape, but the shape is not limited thereto. The lower surfaces of the first connection electrode 141 and the second connection electrode 143 may have different areas than the upper surface. For example, the lower surface area may be larger or smaller than the upper surface area. The lower surface of the first connection electrode 141 and the second connection electrode 143 may be formed as a flat surface, but the present invention is not limited thereto. The lower surfaces of the first connection electrode 141 and the second connection electrode 143 may be disposed on the same plane (i.e., a horizontal surface).

At least one of the first connection electrode 141 and the second connection electrode 143 may be formed to be smaller than the bottom width of the light emitting structure 120 and larger than the bottom width or diameter of the electrodes 131 and 132 .

The first connection electrode 141 and the second connection electrode 143 may have a diameter or width ranging from 1 탆 to 100,000 탆, for example, from 3 탆 to 100 탆. The height of the first connection electrode 141 and the second connection electrode 143 may be 1 μm to 100,000 μm, for example, 10 μm to 300 μm. Here, the thickness of the first connection electrode 141 may be greater than the thickness of the second connection electrode 143. The thickness direction of the first and second connection electrodes 141 and 143 may be a thickness direction of each layer of the light emitting structure 120.

The first connection electrode 141 and the second connection electrode 143 may be formed of a single layer using any one metal or alloy, and the width and height of the single layer may be in the range of 1 탆 to 100,000 탆 For example, the thickness of the single layer may be greater than the thickness of the second electrode 143.

The first connection electrode 141 and the second connection electrode 143 are formed of a metal such as Ag, Al, Au, Cr, Co, Cu, Fe, Hf, In, Mo, Ni, Si, Sn, W and a selective alloy of these metals. The first connection electrode 141 and the second connection electrode 143 may be formed of In, Sn, Ni, Cu, or an alloy thereof selectively for improving adhesion to the first electrode 131 and the second electrode 132. [ Or the like. At this time, the plating thickness may be in the range of 1 to 100,000 angstroms, for example, in the range of 10 to 100 angstroms.

A plating layer may further be formed on the surfaces of the first connection electrode 141 and the second connection electrode 143. The plating layer may be formed of Tin or an alloy thereof, Ni or an alloy thereof, or a Tin-Ag-Cu alloy. And the thickness thereof may be formed to 0.5 탆 to 10 탆. Such a plating layer can improve bonding with other bonding layers.

The first connection electrode 141 and the second connection electrode 143 may be made of any one of Ag, Al, Au, Cr, Co, Cu, Fe, Hf, In, Mo, Ni, Si, Sn, W, and their alloys. The first connection electrode 141 and the second connection electrode 143 may be formed of a metal such as In, Sn, Ni, Cu, and alloys thereof for adhesion between the first electrode 131 and the second electrode 132. [ And the thickness of the plating layer may be 1 to 100,000 angstroms. The first connection electrode 141 and the second connection electrode 143 may be used as a solder ball or a metal bump, but the invention is not limited thereto.

The first connection electrode 141 and the second connection electrode 143 may be made of any one of Ag, Al, Au, Cr, Co, Cu, Fe, Hf, In, Mo, Ni, Si, Sn, W, and their alloys. The first connection electrode 141 and the second connection electrode 143 may be formed of a metal such as In, Sn, Ni, Cu, and alloys thereof for adhesion between the first electrode 131 and the second electrode 132. [ And the thickness of the plating layer may be 1 to 100,000 angstroms. The first connection electrode 141 and the second connection electrode 143 may be used as a single metal such as a solder ball or a metal bump, but the invention is not limited thereto.

The support member 151 is used as a support layer for supporting the light emitting device 100. The supporting member 151 is formed of an insulating material, and the insulating material is formed of a resin layer such as silicon or epoxy. As another example, the insulating material may include a paste or an insulating ink. The insulating material is selected from the group consisting of polyacrylate resin, epoxy resin, phenolic resin, polyamide resin, polyimides rein, unsaturated polyesters resin, polyphenylene ether resin (PPE), polyphenylene oxide resin (PPO), polyphenylenesulfide resin, cyanate ester resin, benzocyclobutene (BCB), Polyamido-amine Dendrimers (PAMAM), and Polypropylene-imine, Dendrimers (PPI), and PAMAM-internal structures and PAMAM-OS (organosilicon) with organic-silicone outer surfaces alone or combinations thereof . The support member 151 may be formed of a material different from that of the first insulating layer 121.

At least one of compounds such as oxides, nitrides, fluorides and sulfides having at least one of Al, Cr, Si, Ti, Zn and Zr may be added to the support member 151. Here, the compound added to the support member 151 may be a heat spreader, and the heat spreader may be used as powder particles, pellets, fillers, and additives having a predetermined size. For convenience of explanation, The diffusion agent will be described. Here, the heat spreader may be an insulating material or a conductive material. The size of the heat spreader may be 1 ANGSTROM to 100,000 ANGSTROM and may be 1,000 ANGSTROM to 50,000 ANGSTROM for thermal diffusion efficiency. The particle shape of the heat spreader may include a spherical shape or an irregular shape, but is not limited thereto.

The heat spreader may include a ceramic material. The ceramic material may include a low temperature co-fired ceramic (LTCC), a high temperature co-fired ceramic (HTCC), an alumina, Quartz, calcium zirconate, forsterite, SiC, graphite, fused silica, mullite, cordierite, zirconia, beryllia, ), And aluminum nitride. The ceramic material may be formed of a metal nitride having thermal conductivity higher than that of nitride or oxide among the insulating materials such as nitride or oxide, and the metal nitride may include a material having a thermal conductivity of, for example, 140 W / mK or more. The ceramic material may be, for example, SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , BN, Si ₃ N ₄ , SiC (SiC- CeO 2, AlN, and the like. The thermally conductive material may comprise a component of C (diamond, CNT).

The support member 151 may be formed of a ceramic-based support layer, a polyimide material, or a polyimide material under the ceramic substrate support layer. The polyimide is a highly heat resistant material and is stable to heat generated from the light emitting structure 120 and heat transmitted to the bonding process. The polyimide may be provided in the form of a film, but is not limited thereto.

The support member 151 may be formed as a single layer or a multilayer, but is not limited thereto. The strength of the support member 151 can be improved and the thermal conductivity can be improved by adding a heat diffusion agent such as powder of a ceramic material having a heat transfer rate higher than that of the resin material in the interior of the resin material of the support member 151 have.

The heat diffusion agent contained in the support member 151 may be added in a proportion of about 1 to 99 wt%, and may be added in an amount of 50 to 99 wt% for efficient heat diffusion. By adding the heat spreader to the support member 151, the heat conductivity inside can be further improved. The support member 151 has a coefficient of thermal expansion of 4-11 [x 10 ⁶ / ° C], and the coefficient of thermal expansion of the support member 151 has the same or similar thermal expansion coefficient as that of the substrate 111, for example, The reliability of the light emitting device can be prevented from being deteriorated by suppressing warpage or defects of the wafer due to the difference in thermal expansion from the light emitting structure 120 formed on the substrate 111.

Here, the lower surface area of the support member 151 may be substantially the same as the upper surface of the substrate 111. The bottom surface of the support member 151 may have the same area as the top surface of the first conductive semiconductor layer 115. The lower surface of the support member 151 may have a width equal to the width of the upper surface of the substrate 111 and the upper surface of the first conductive semiconductor layer 115. This is because the support member 151 and the side surfaces of the substrate 111 and the first conductivity type semiconductor layer 115 can be disposed on the same plane by forming the support member 151 and then separating the support member 151 into individual chips .

The embodiment may electrically isolate electrode structures connected with different polarities using a plurality of insulating layers 121 and 123, and at least one of the first and second insulating layers 121 and 123 may be a metal oxide, Or the support member 151 may be formed of a ceramic substrate support layer or a polyimide material.

The thickness of the light emitting device 100 may range from 200 탆 to 500 탆, but is not limited thereto.

1 and 2, the length D1 of the first side of the support member 151 is substantially the same as the length of the first side of the substrate 111, May be formed to be substantially equal to the length of the second side of the base 111. In addition, the distance D5 between the first connection electrode 141 and the second connection electrode 143 may be separated by at least one third of the length of one side of the light emitting device, but the invention is not limited thereto. The first connection electrode 141 may be spaced apart from the side surface by a predetermined distance D4 or may not be spaced apart. At least one of the first and second connection electrodes 141 and 143 may be exposed in plural as viewed from the lower surface of the support member 151, but the present invention is not limited thereto.

The lower surface of the support member 151 may be formed as a substantially flat surface or an irregular surface, but the present invention is not limited thereto.

The thickness of the support member 151 may be in the range of 1 탆 to 100,000 탆, and may be in the range of 50 탆 to 1,000 탆.

The lower surface of the support member 151 is formed to be lower than the lower surfaces of the first electrode 131 and the second electrode 132. The lower surface of the first connection electrode 141 and the lower surface of the second connection electrode 143 (I.e., the horizontal surface) of the lower surface of the substrate (e.g.

The support member 151 is in contact with the circumferential surfaces of the first connection electrode 141 and the second connection electrode 143. Accordingly, the heat conducted from the first connection electrode 141 and the second connection electrode 143 can be diffused through the support member 151 and dissipated. At this time, the thermal conductivity of the support member 151 is improved by the internal heat spreader, and the heat dissipation is performed through the entire surface. Therefore, the light emitting device 100 can improve reliability by heat.

The side surface of the support member 151 may be disposed on the same plane (that is, the vertical surface) of the light emitting structure 120 and the side surface of the substrate 111.

Most of the light is emitted in the direction of the top surface of the substrate 111 and a part of the light is transmitted through the side surface of the substrate 111 and the side surface of the light emitting structure 120 The light extraction efficiency and the heat radiation efficiency can be improved.

FIGS. 3 to 5 are views showing the electrode structure of FIG. 1 in detail.

FIG. 3 is a view showing the first and second electrodes 131 and 132, FIG. 4 is a view showing the first and second bonding electrodes 133 and 134, and FIG. 5 is a view showing the third and fourth bonding electrodes 135 and 136 FIG.

3, the first and second electrodes 131 and 132 include an adhesive layer 31, a reflective layer 32 under the adhesive layer 31, a diffusion prevention layer 33 under the reflective layer 32, 0.0 > 34 < / RTI > The adhesive layer 31 is in contact with the reflective electrode layer 130 or the first conductive type semiconductor layer 115 in FIG. 1 and is formed of Cr, Ti, Co, Ni, V, Hf, And its thickness may be formed to 1 to 1,000 angstroms. The reflective layer 32 is formed under the adhesive layer 31 and may be formed of Ag, Al, Ru, Rh, Pt, Pd, or an alloy thereof. . The diffusion preventing layer 33 is formed under the reflective layer 32 and may be formed of Ni, Mo, W, Ru, Pt, Pd, La, Ta, Ti, The thickness includes 1 to 10,000 angstroms. The bonding layer 34 may be formed of Al, Au, Cu, Hf, Pd, Ru, Rh, Pt, or an alloy thereof. The second electrode 132 may not include the reflective layer 32. The first and second electrodes 131 and 132 may have the same or different lamination structure, but the present invention is not limited thereto.

The structures of the first electrode 131 and the second electrode 133 may be the same or different. The first electrode 131 and the second electrode 133 are formed on the structure of the adhesive layer 31 / the reflection layer 32 / the diffusion preventing layer 33 / the bonding layer 34 or the adhesive layer 31 / the diffusion preventing layer 33 / The bonding layer 34 may be formed.

Referring to FIG. 4, the first and second junction electrodes 133 and 134 may be formed of at least three metal layers. The first and second junction electrodes 133 and 134 include an adhesive layer 35, a support layer 36 under the adhesive layer 35 and a protective layer 37 under the support layer 36. The adhesive layer 35 may be formed of Cr, Ti, Co, Cu, Ni, V, Hf and two or more alloys thereof. The thickness of the adhesive layer 35 may be 1 to 1,000 Å . The supporting layer 36 may be formed of a material selected from the group consisting of Ag, Al, Au, Co, Cu, Hf, Mo, Ni, Ru, Rh, Pt, Pd, And the thickness thereof is in the range of 1 to 500,000 angstroms, and as another example, it may be formed in the thickness of 1,000 to 10,000 angstroms. The protective layer 37 is a layer for protecting the influence on the semiconductor layer and may be formed of one of Au, Cu, Ni, Hf, Mo, V, W, Rh, Ru, Pt, Pd, La, 2 or more alloys, and the thickness thereof may be 1 to 50,000 angstroms.

As another example, the lamination period of the adhesive layer 35 and the supporting layer 36 may be repeatedly laminated, and the lamination period may be formed in one cycle or longer.

Referring to FIG. 5, the third and fourth junction electrodes 135 and 136 may be formed of at least three metal layers, and may include an adhesive layer 38, a diffusion prevention layer 39 under the adhesive layer 38, 39). ≪ / RTI > The adhesive layer 38 may be selected from the group consisting of Cr, Ti, Co, Ni, V, Hf and two or more of these alloys. The thickness of the adhesive layer 38 may be 1 to 1,000 Å As shown in FIG. The diffusion preventive layer 39 may be selected from among Ni, Mo, Hf, W, Ru, Pt, Pd, La, Ta, Ti and two or more alloys thereof, 1 to 10,000 ANGSTROM. The bonding layer 40 is a layer for bonding with the connection electrode and may be a layer of Au, Cu, Ni, Hf, Mo, V, W, Rh, Ru, Pt, Pd, La, Ta, Ti, And the thickness may be set to 1 to 10,000 angstroms. The stacking period of the adhesive layer 38 and the diffusion preventing layer 39 may be repeatedly stacked, and the stacking period may be one or more cycles.

6 to 11 are views showing a manufacturing process of the light emitting device according to the first embodiment. Although the following manufacturing processes are shown as individual elements for ease of explanation, they are manufactured at the wafer level, and individual elements can be described as being manufactured through a processing process described below. Further, the present invention is not limited to the production process of the individual elements described below, and can be manufactured in an additional process or a fewer process in a specific process of each process.

Referring to FIG. 6, the substrate 111 may be loaded into a growth apparatus, and a compound semiconductor of Group II to VI elements may be formed thereon in a layer or pattern form. The substrate 111 is used as a growth substrate.

The substrate 111 may be a transparent substrate, an insulating substrate, or a conductive substrate. The substrate 111 may be a sapphire substrate (Al ₂ O ₃ ), GaN, SiC, ZnO, Si, GaP, InP, Ga ₂ O ₃ , GaAs, and the like. On the upper surface of the substrate 111, a light extracting structure such as an irregular pattern may be formed. The irregular pattern may change the critical angle of light to improve the light extraction efficiency.

The growth equipment may be an electron beam evaporator, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), dual-type thermal evaporator, sputtering, MOCVD vapor deposition, and the like, and the present invention is not limited thereto.

A first semiconductor layer 113 is formed on the substrate 111. The first semiconductor layer 113 may be formed of a buffer layer and / or an undoped semiconductor layer.

The light emitting structure 120 may be formed on the first semiconductor layer 113. The light emitting structure 120 may include a first conductive semiconductor layer 115, an active layer 117, and a second conductive semiconductor layer 119 in this order.

The first conductive semiconductor layer 115 may be a compound semiconductor of a Group III-V element doped with a first conductive dopant, for example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, and the like. When the first conductivity type is an n-type semiconductor, the first conductivity type dopant includes n-type dopants such as Si, Ge, Sn, Se, and Te. The first conductive semiconductor layer 115 may be formed as a single layer or a multilayer, but the present invention is not limited thereto. The first conductive semiconductor layer 115 may further include a superlattice structure having different materials, but the present invention is not limited thereto.

An active layer 117 is formed on the first conductive semiconductor layer 115 and the active layer 117 may include at least one of a single quantum well structure, a multiple quantum well structure, a quantum wire structure, and a quantum dot structure. . The active layer 117 is made of a compound semiconductor material of Group 3-V group elements, and is made of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + For example, the period of the InGaN well layer / the GaN barrier layer, the period of the InGaN well layer / AlGaN barrier layer, the period of the InGaN well layer / the InGaN barrier layer, and the like And is not limited thereto.

A cladding layer may be formed on and / or below the active layer 117, and the cladding layer may be formed of an AlGaN-based semiconductor. Here, the barrier layer of the active layer 117 may be formed to have a bandgap higher than that of the well layer, and the clad layer may be formed to have a bandgap higher than that of the barrier layer.

The second conductivity type semiconductor layer 119 is formed on the active layer 117 and the second conductivity type semiconductor layer 119 is a compound semiconductor of a group III-V element doped with the second conductivity type dopant, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP and the like. When the second conductivity type is a p-type semiconductor, the second conductivity type dopant includes a p-type dopant such as Mg, Zn, and the like. The second conductive semiconductor layer 119 may be formed as a single layer or a multilayer, but is not limited thereto. The second conductive semiconductor layer 119 may further include a superlattice structure having different materials, but the present invention is not limited thereto.

The first conductive semiconductor layer 115, the active layer 117, and the second conductive semiconductor layer 119 may be defined as a light emitting structure 120. Also, a first conductive semiconductor layer, for example, an n-type semiconductor layer having a polarity opposite to that of the second conductive type may be formed on the second conductive semiconductor layer 119. Accordingly, the light emitting structure 120 may be formed of at least one of an np junction, a pn junction, an npn junction, and a pnp junction structure.

Referring to FIG. 7, etching is performed on a partial area A1 of the light emitting structure 120. FIG. The first conductivity type semiconductor layer 115 may be exposed in a part of the region A1 of the light emitting structure 120 and the exposed portion of the first conductivity type semiconductor layer 115 may be exposed on the upper surface of the active layer 117 May be formed at a lower height. A part of the region A1 of the light emitting structure 120 may be formed along the edge region of the light emitting structure 120 or may be formed on one side or edge region. However, the present invention is not limited thereto.

The etching process is performed by masking the upper surface region of the light emitting structure 120 with a mask pattern and then performing a dry etching process on a partial region A1 of the light emitting structure 120. The dry etching includes at least one of ICP (Inductively Coupled Plasma) equipment, RIE (Reactive Ion Etching) equipment, CCP (Capacitive Coupled Plasma) equipment, and ECR (Electron Cyclotron Resonance) equipment. As another etching method, wet etching may be further included, but the present invention is not limited thereto.

Here, a part of the area A1 of the light emitting structure 120 may be an arbitrary area as an etching area, and the number of the areas A1 may be one or more.

A reflective electrode layer 130 is formed on the light emitting structure 120. The reflective electrode layer 130 may have an area less than the area of the upper surface of the second conductive type semiconductor layer 119. This may prevent a short circuit due to the manufacturing process of the reflective electrode layer 130. Here, the reflective electrode layer 130 may be masked with a mask not to form the reflective electrode layer 130, and then may be deposited using a sputtering apparatus or a vapor deposition apparatus. The reflective electrode layer 130 may include a metal material having a reflectivity of 70% or more, or a metal material having a reflectance of at least 90%.

The reflective electrode layer 130 may be formed of, for example, a structure of an ohmic contact layer / a reflective layer / a diffusion barrier layer / a protective layer, a structure of a reflective layer / a diffusion barrier layer / a protective layer, or a structure of an ohmic contact layer / Or may be formed as a reflective layer. The material and thickness of each layer will be described with reference to FIG. Here, the order of the etching process and the process of the reflection electrode layer may be changed, but the invention is not limited thereto.

A second electrode 132 is formed on the reflective electrode layer 130 and a first electrode 131 is formed on the first conductive semiconductor layer 115. The first electrode 131 and the second electrode 132 may be formed by the same process, but the present invention is not limited thereto.

The first electrode 131 and the second electrode 132 may be formed by sputtering and / or vapor deposition equipment after masking regions other than the electrode formation region with a mask, but the present invention is not limited thereto. The first electrode 131 and the second electrode 132 may be formed of one selected from the group consisting of Cr, Ti, Co, Ni, V, Hf, Ag, Al, Ru, Rh, Pt, Pd, Ni, Mo, And their optional alloys. The first electrode 131 and the second electrode 132 may be formed in multiple layers, and may include at least two layers of an adhesive layer / a reflective layer / a diffusion prevention layer / a bonding layer using the above materials. The first electrode 131 and the second electrode 132 may be formed in the same process and have the same lamination structure, but the present invention is not limited thereto.

The second electrode 132 may be in physical contact with the reflective electrode layer 130 and the second conductive type semiconductor layer 119.

Referring to FIG. 8, a first insulating layer 121 is formed in regions except for the open regions P1 and P2 of the first electrode 131 and the second electrode 132. Referring to FIG. The first insulating layer 121 may be formed by a sputtering method or a vapor deposition method. The first insulating layer 121 is formed on a region except for the first electrode 131 and the second electrode 132 so that the reflective electrode layer 130 and the second conductive semiconductor layer 119 And covers the exposed surface of the first conductive type semiconductor layer 115.

The first insulating layer 121 includes an insulating material such as oxide, nitride, fluoride, or sulfide of a material such as Al, Cr, Si, Ti, Zn, or Zr or an insulating resin. The insulating resin includes a polyimide material. The first insulating layer 121 may be formed of, for example, SiO ₂ , Si ₃ N ₄ , Al ₂ O ₃ , or TiO ₂ . The first insulating layer 121 may be formed as a single layer or a multilayer, but is not limited thereto.

9, a first bonding electrode 133 is formed on the first electrode 131 and a second bonding electrode 134 is formed on the open region P2 of the second electrode 132 do. A third junction electrode 135 is formed on the first junction electrode 133 and a fourth junction electrode 136 is formed on the second junction electrode 134.

The first and third junction electrodes 133 and 135 and the second and fourth junction electrodes 134 and 136 may be formed by masking an area to be protected by a mask and then sputtering and / I do not. Such a bonding electrode will be described with reference to FIGS. 4 and 5. FIG.

The portions 133A and 135A of the first and third junction electrodes 133 and 135 may be further disposed in a region overlapping the second conductive type semiconductor layer 119 of the light emitting structure 120, Do not.

10, a second insulating layer 123 is formed on the third and fourth junction electrodes 135 and 136 and the second insulating layer 123 is formed on the regions of the first and second connection electrodes 141 and 143 Are formed on the region except for the electrode structure, and the contact between the different electrode structures is blocked.

A first connection electrode 141 is bonded to the third junction electrode 135 and a second connection electrode 143 is bonded to the fourth junction electrode 136. The first connection electrode 141 includes a conductive pad such as a solder ball and / or a metal bump. The first connection electrode 141 is bonded on the third junction electrode 135 and may be disposed in a direction perpendicular to the upper surface of the first conductive type semiconductor layer 115. The second connection electrode 143 includes a conductive pad such as a solder ball and / or a metal bump. The second connection electrode 143 is bonded on the fourth junction electrode 136, and is formed on the upper surface of the second conductive type semiconductor layer 119 As shown in Fig.

The thickness of the first connection electrode 141 may be greater than the thickness of the second connection electrode 143. The thickness of the first connection electrode 141 and the second connection electrode 143 Are disposed on different planes, and their upper surfaces are disposed on the same plane (i.e., horizontal plane).

Referring to FIG. 11, the support member 151 is formed on the second insulation layer 121 by a squeegee and / or a dispensing method. Further, the support member 151 may be formed of a material such as polyimide. When the supporting member 151 is a film type, the supporting member 151 may have an open area corresponding to the first and second connection electrodes 141 and 143 and may be adhered thereto.

The support member 151 is formed of an insulating support layer by adding a thermal diffusion agent in a resin such as silicone or epoxy. The heat spreader may include at least one material selected from the group consisting of oxides, nitrides, fluorides, and sulfides having a material such as Al, Cr, Si, Ti, Zn, and Zr. The heat spreader may be defined as a powder particle, a grain, a filler, or an additive having a predetermined size.

The heat spreader includes a ceramic material, and the ceramic material includes a low temperature co-fired ceramic (LTCC) or a high temperature co-fired ceramic (HTCC). The ceramic material may be formed of a metal nitride having thermal conductivity higher than that of nitride or oxide among the insulating materials such as nitride or oxide, and the metal nitride may include a material having a thermal conductivity of, for example, 140 W / mK or more. The ceramic material may be selected from the group consisting of SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , BN, Si ₃ N ₄ , SiC (BeC) And may be a ceramic type such as AlN. The thermally conductive material may comprise a component of C (diamond, CNT). The heat spreader may be contained in the support member 151 in an amount of about 1 to 99 Wt /%, and may be added in an amount of 50% or more for thermal diffusion efficiency.

The support member 151 may be formed by mixing a polymer material with ink or paste. The mixing method of the polymer material may be a ball mill, a planetary ball mill, an impeller mixing, a bead mill, or a basket mill. In this case, a solvent and a dispersant can be used for uniform dispersion, and the solvent is added for viscosity control, and it is preferably 3 to 400 Cps for the ink and 1000 to 1 million Cps for the paste. It is also possible to use water, methanol, ethanol, isopropanol, butylcabitol, MEK, toluene, xylene, diethylene glycol (DEG) , Formamide (FA), alpha -terpineol (TP), gamma -butylurolactone (BL), methylcellosolve (MCS), propylmethylcellosolve (Propylmethylcellosolve; PM), or a combination thereof. Additionally, in order to increase inter-particle bonding, 1-Trimethylsilylbut-1-yne-3-ol, Allytrimethylsilane, Trimethylsilyl methanesulfonate, Trimethylsilyl

tricholoracetate, Methyl trimethylsilylacetate, Trimethylsilyl propionic acid

And other silane-based additives.

Here, in the manufacturing process, the connection electrodes 141 and 143 such as solder bumps may be manufactured and bonded in advance, and then the support members 151 may be formed around the connection electrodes 141 and 143. On the contrary, the second insulating layer 123 such as ink or paste is printed or dispensed, and after curing, holes corresponding to the connecting electrodes 141 and 143 are formed, and then conductive materials are filled to form connecting electrodes 141 and 143 can do.

The thickness of the support member 151 may be the same as the thickness of the upper surface of the first connection electrode 141 and the second connection electrode 143.

The support member 151 is filled around the first connection electrode 141 and the second connection electrode 143. An upper surface of the first connection electrode 141 and a surface of the second connection electrode 143 are exposed on the upper surface of the support member 151.

The support member 151 is an insulating support layer and supports the periphery of the plurality of connection electrodes 141 and 143. That is, the plurality of connection electrodes 141 and 143 are inserted into the support member 151.

The thickness of the support member 151 may be such that the upper surfaces of the first connection electrode 141 and the second connection electrode 143 are exposed. The support member 151 is cured at a predetermined temperature, for example, 200 ° C ± 100 ° C, and the curing temperature is a range that does not affect the semiconductor layer.

Here, after the support member 151 is formed, a connection electrode hole may be formed in the support member 151, and then the first and second connection electrodes 141 and 143 may be formed.

Here, the substrate 111 may have a thickness of 150 μm or more, or may have a thickness ranging from 30 μm to 150 μm through a process of polishing the lower surface of the substrate 111. This is because the substrate 111 is further provided with a separate support member 151 on the opposite side of the substrate 111 in the light emitting device 100 so that the thickness of the substrate 111 is more It can be processed thinly. Here, the surface of the support member 151, the first connection electrode 141, and the second connection electrode 143 may be subjected to a polishing process such as a chemical mechanical polishing (CMP) process.

And the light emitting device manufactured as shown in FIG. 11 is rotated 180 degrees. Such a light emitting device is packaged as a support member 151 at the wafer level and can be provided as an individual light emitting device by scribing, braking, and / or cutting in at least one chip unit. The light emitting device may be packaged at a wafer level so that it can be mounted on a lead frame of a module substrate or a package without a separate wire in a flip bonding manner. The upper surface area of the support member 151 may be the same as the lower surface area of the substrate 111.

12 is a side sectional view of the light emitting device 100A according to the second embodiment.

12, a plurality of protrusions 11 are formed on the substrate 111. The plurality of protrusions 11 protrude in a direction opposite to the support member 151, Thereby changing the critical angle of the light incident through the light source. Accordingly, the light extraction efficiency of the light emitting device can be improved. The convex portion 11 may have a convex lens shape, a hemispherical shape, or a polygonal shape arranged in a stripe or matrix form.

FIG. 13 is a view showing a light emitting device according to a third embodiment, and FIG. 14 is a bottom view of FIG.

Referring to FIGS. 13 and 14, a separation groove 152B is formed between the support members 152 and 152A, and the separation groove 152B physically divides the support members 152 and 152A on both sides. The first supporting member 152 is disposed under the first region of the light emitting structure 120 and is formed in the peripheral region of the first connecting electrode 141. The second supporting member 152A is disposed under the second region of the light emitting structure 120 and is formed in a peripheral region of the second connecting electrode 143. [ The first connection electrode 141 and the second connection electrode 143 are physically or electrically separated from each other.

The separation groove 152B physically and electrically separates the first support member 152 and the second support member 152A and a second insulation layer 123 is formed below the separation groove 152B. Lt; / RTI >

The first supporting member 152 and the second supporting member 152A may be formed of an insulating material or a conductive material. The conductive material may be a conductive material such as carbon or silicon carbide (SiC), or may be formed of a metal. When the first supporting member 152 and the second supporting member 152A are made of a conductive material, they may be formed of a material different from the material of the first connecting electrode 141 and the second connecting electrode 143 have.

The first supporting member 152 and the second supporting member 152A of the conductive material are separated by the silver separating groove 152B so that the first connecting electrode 141 and the second connecting electrode 143 ) The liver is electrically opened.

The separation groove 152B may have an interval between the first support member 152 and the second support member 152A and the depth may be formed to a thickness of the second support member 152A. The separation groove 152B can prevent electrical interference between the first support member 152 and the second support member 152A and can provide an individual heat dissipation path.

The lower surfaces of the first support member 152 and the second support member 152A may be disposed on the same plane as the lower surfaces of the first connection electrode 141 and the second connection electrode 143. Here, the first supporting member 152 and the second supporting member 152A may be mounted through the first connecting electrode 141 and the second connecting electrode 143, even if they are made of a conductive material.

A ceramic-based insulating material may further be disposed between the first supporting member 152 and the second supporting member 152A, and the ceramic-based insulating material may be disposed between the first supporting member 152 and the second supporting member 152A. And can be disposed on the same horizontal surface as the lower surface of the support member 152A.

FIG. 15 is a side sectional view showing a light emitting device according to a fourth embodiment, and FIG. 16 is a bottom view of the light emitting device of FIG.

15 and 16, the light emitting device includes a plurality of support members 153 and 153A, and the plurality of support members 153 and 153A are formed around the connection electrodes 141 and 143, respectively. The periphery of the first connection electrode 141 is covered by the first support member 153 and the periphery of the second connection electrode 143 is covered by the second support member 153A. The materials of the first and second support members 153 and 153A may be an insulating material or a conductive material.

The width W3 of the first support member 153 is wider than the width of the first connection electrode 141 so that the first support member 153 can be used as a thermal conduction path and an electrical conduction path . The width of the second support member 153A is wider than the width of the second connection electrode 143 so that the second support member 153A can be used as a thermal conduction path and an electrical conduction path.

The distance between the first supporting member 153 and the second supporting member 153A may be at least one third of the length of either side of the light emitting structure 120.

A ceramic material may be further disposed between the first supporting member 153 and the second supporting member 153A and the insulating material of the ceramic material may be disposed between the first supporting member 153 and the second supporting member 153A, And can be disposed on the same horizontal surface as the lower surface of the support member 153A.

17 is a side sectional view showing a light emitting device according to a fifth embodiment.

Referring to FIG. 17, the light emitting structure 120 exposes the first conductivity type semiconductor layer 115 to the center side etching region. The light emitting structure 120 may have a plurality of cell structures or may expose a portion of the first conductivity type semiconductor layer 115 in an open region.

The first electrode structures 131, 133 and 135 may be formed under the exposed first conductive semiconductor layer 115 and the reflective electrode layer 130 may be disposed around the first connection electrode 141. A plurality of second electrode structures 132, 134, and 136 may be formed under the reflective electrode layer 130, respectively. The second electrode structures 131, 133, and 135 may be disposed on both sides of the first electrode structures 131, 133, and 135 to uniformly supply current. Since the light emitting structure 120 is formed of a plurality of cells, the overall luminance can be improved.

18 is a side sectional view showing a light emitting device according to the sixth embodiment.

18, the light emitting device includes a substrate 111, a first semiconductor layer 113, a light emitting structure 120, a reflective electrode layer 130, a first insulating layer 121, first electrode structures 131, 133, and 135, A second electrode layer 123, a first connection electrode 141, a second connection electrode 143, and a support member 151. The second electrode structure 132, 134, 136, the second insulation layer 123,

At least one of the first pattern portion 12 and the second pattern portion 13 may be formed on the substrate 111. The first pattern portion 12 is formed in a first concavo-convex structure having a plurality of projections, and the second pattern portion 13 is formed in a second concavo-convex structure having a plurality of concavities on the first concavo-convex structure . The second concavo-convex structure may be formed on the first concavo-convex structure with fine irregularities having a size smaller than the size of the protrusions.

The projection of the first pattern unit 12 may be formed in a protruding shape or a raised shape from the upper surface of the substrate 111. As another example, the first pattern portion 12 may be formed as a recess having a recessed shape or a depressed shape with a lower depth than the upper surface of the substrate 111. The concave portion of the second pattern portion 13 may be formed on the surface of the first pattern portion 12 to have a recessed shape or a concave shape with a size smaller than the size of the protrusion of the first pattern portion 12. As another example, the second pattern portion 13 may have a protruding shape having a convex or concave shape and a size smaller than that of the protrusions of the first pattern portion 12. The arrangement pattern of the first pattern units 12 may be formed in a matrix form or a lattice form. The protrusion of the first pattern portion 12 may be formed in a shape such as a hemispherical shape, a conical shape, a polygonal pyramid shape, a columnar shape such as a circular column or a polygonal column, or a conical shape. Each of the protrusions may include a circular shape, a polygonal shape, and a shape in which spherical and angular surfaces are mixed when viewed from above.

The concave portion of the second pattern portion 13 may have a shape such as a hemispherical shape, a conical shape, a polygonal pyramid, a columnar shape such as a circular column or a polygonal column, or a conical shape. The second pattern portion 13 may include a circular shape, a polygonal shape, and a shape in which spherical and angular surfaces are mixed when viewed from above.

The size or thickness of the width of the protrusion of the first pattern unit 12 may be in the range of 0.1 탆 to 10 탆 and may be smaller than the thickness of the substrate 111, for example. Here, the width of the projection may be larger than the thickness (L1) or height of the projection, but is not limited thereto. The depth or width of the concave portion of the second pattern portion 13 may be in the range of 0.1 nm to 100 nm or in the range of 0.1 nm to 100 탆. The period between the protrusions of the first pattern portion 12 may be in the range of 0.1 탆 - 100 탆, and the period between the recesses of the second pattern portion 13 may be in the range of 0.1 탆 - 100 탆 .

The first pattern unit 12 and the second pattern unit 13 may change the critical angle of incident light to lower the total reflection ratio of the incident light to improve the light extraction efficiency. The phosphor layer may be in contact with the substrate 111 or may be disposed at a predetermined distance, but the present invention is not limited thereto.

19 is a side sectional view showing a light emitting device according to the seventh embodiment.

19, the light emitting device 101 includes a light emitting structure 120, a reflective electrode layer 130, a first insulating layer 121, a first electrode structure 131, 133, 135, a second electrode structure 132, 134, 136, An insulating layer 123, a first connecting electrode 141, a second connecting electrode 143, and a supporting member 151.

A semiconductor layer, for example, a first conductivity type semiconductor layer 115, is disposed on the light emitting device 101 due to removal of the substrate. A supporting member 151 is disposed below the light emitting device 101. The upper surface of the first conductive type semiconductor layer 115 and the lower surface of the supporting member 151 are disposed on the opposite sides.

The first conductive semiconductor layer 115, the active layer 117, and the second conductive semiconductor layer 119 may be defined as the light emitting structure 120. The light emitting structure 120 includes a group III-V compound semiconductor, for example, In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + ), And can emit a predetermined peak wavelength within a wavelength range from the ultraviolet band to the visible light band.

The light emitting device 101 may be formed by removing the substrate or the first semiconductor layer from the light emitting device of FIG. 1, and the first conductive semiconductor layer 115 or another semiconductor layer may be disposed thereon. The thickness of the light emitting device 101 may be 200 탆 or less, but the present invention is not limited thereto.

A light extracting structure such as a roughness may be formed on the surface of at least one of the second conductive type semiconductor layer 119 and the reflective electrode layer 130. Such a light extracting structure may change the critical angle of incident light, , The light extraction efficiency can be improved.

The side surface of the support member 151 may be disposed on the same plane (i.e., a vertical surface) as the side surface of the light emitting structure 120.

Since most of the light is emitted in the direction of the top surface of the light emitting structure 120 and some light is emitted through the side surface of the light emitting structure 120, Loss can be reduced. Accordingly, the light extraction efficiency and heat dissipation efficiency of the light emitting device can be improved.

20 is a side sectional view of the light emitting device according to the seventh embodiment.

20, a plurality of protrusions 115A are formed on the first conductive semiconductor layer 115. The plurality of protrusions 115A protrude in a direction opposite to the support member 151, The critical angle of light incident through the first conductive type semiconductor layer 115 is changed. Accordingly, the light extraction efficiency of the light emitting device can be improved. The protrusions 115A may be arranged in a stripe shape or a matrix shape in a lens shape, a horn shape, or a polygonal shape. Each protrusion 115 includes a plurality of three-dimensional structures, for example, polygonal horns.

Fig. 21 is a view showing a light emitting device package on which the light emitting element of Fig. 1 is mounted as an eighth embodiment.

21, the light emitting device package 200 includes a body 211 having a cavity 212, a plurality of lead frames 215 and 217 disposed in the cavity 212 of the body 211, A light emitting device 100 disposed on the lead frames 215 and 217; a light transmitting resin layer 21 disposed on the cavity 212 to cover the light emitting device 100; Layer (22).

The body 211 may be formed of a resin-based insulating material, for example, a resin material such as polyphthalamide (PPA), PET, or an epoxy molding compound (EMC). Alternatively, the body 211 may be formed of a thermosetting resin including a silicone-based material, an epoxy-based material, or a plastic material, or a material having high heat resistance and high light resistance. The above-mentioned silicon includes a white-based resin. Such thermosetting resin or high heat-resistant material can be formed through a transfer molding process.

In addition, the body 211 may be optionally added with an acid anhydride, an antioxidant, a release agent, a light reflector, an inorganic filler, a curing catalyst, a light stabilizer, a lubricant, and titanium dioxide. The body 211 may be formed of at least one member selected from the group consisting of an epoxy resin, a modified epoxy resin, a silicone resin, a modified silicone resin, an acrylic resin, and a urethane resin. For example, an epoxy resin comprising triglycidylisocyanurate, hydrogenated bisphenol A diglycidyl ether and the like and an acid comprising hexahydrophthalic anhydride, 3-methylhexahydrophthalic anhydride, 4-methylhexahydrophthalic anhydride and the like DBU (1,8-Diazabicyclo (5,4,0) undecene-7) as a curing accelerator in an epoxy resin, ethylene glycol, titanium oxide pigment and glass fiber as a cocatalyst were added, A solid epoxy resin composition that has been cured and B-staged can be used. However, the present invention is not limited thereto.

In addition, a light shielding material or a diffusing agent may be mixed in the body 211 to reduce the transmitted light. In order to have a predetermined function, the body 211 may be formed by appropriately mixing at least one member selected from the group consisting of a diffusing agent, a pigment, a fluorescent material, a reflective material, a light shielding material, a light stabilizer, .

The body 211 may be formed of a light-transmitting material or a material having a conversion material for converting the wavelength of incident light. The body 211 may have a single-layer structure or a multi-layer structure, but the present invention is not limited thereto.

The cathode mark may be selectively formed in the region of the body 211 or any one of the lead frames 215 and 217. The cathode mark is displayed to distinguish the polarities of the different lead frames 215 and 217 of the light emitting device package 200.

A cavity 212 is formed in the body 211, and the cavity 212 has a concave shape with an open top. The cavity 212 may be formed in a circular shape, an elliptical shape, or a polygonal shape when viewed from the device top side, but the present invention is not limited thereto. A plurality of lead frames 215 and 217 are disposed on the bottom of the cavity 212. The plurality of lead frames 215 and 217 are spaced apart from each other.

The circumferential surface 212A of the cavity 212 may be curved or angled and may be inclined or perpendicular to the bottom of the cavity 212. The circumferential surface 212A of the cavity 212 may be formed in a stepped structure, but the present invention is not limited thereto.

At least a portion of the plurality of lead frames 215 and 217 is disposed at the bottom of the cavity 212 and the gap portion 214 is disposed between the plurality of lead frames 215 and 217.

The plurality of lead frames 215 and 217 may be formed of a metal plate having a predetermined thickness, and another metal layer may be plated on the surface of the metal plate. However, the present invention is not limited thereto. The plurality of lead frames 215 and 217 may be formed of a metal material such as titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta) ), Tin (Sn), silver (Ag), and phosphorus (P).

The plurality of lead frames 215 and 217 include at least two and include, for example, a first lead frame 215 and a second lead frame 217. The first and second lead frames 215 and 217 may have a multi-layer structure, but the present invention is not limited thereto. The thickness of the first and second lead frames 215 and 217 may be in the range of 100 to 100 mm, in the range of 0.3 to 1.5 mm, or in the range of 0.3 to 0.8 mm.

The gap 214 may be formed of the same material as that of the body 211 or may be formed of a material different from that of the body 211. The gap portion 214 is formed of an insulating material so as to electrically open between the first and second lead frames 215 and 217.

The first and second lead frames 215 and 217 are disposed on the bottom of the cavity 212 and electrically connected to the first connection electrode 141 and the second connection electrode 141 of the light emitting device 100 by adhesive members 221 and 222, (Not shown). The light emitting devices 100 may be disposed in the cavity 212 or may be at least one of an ultraviolet LED chip, a blue LED chip, a red LED chip, and a green LED chip. However, the present invention is not limited thereto.

The adhesive members 221 and 222 may be formed of a material including a conductive material such as a solder. Alternatively, the bonding members 221 and 222 include a metal material or a mixture thereof, and the metal material includes at least one of Sn, Ag, Ni, and Au. The thickness of the adhesive members 221 and 222 may be in the range of 1000 Å to 1000 袖 m, for example, in the range of 3000 Å to 30 탆.

The first bonding member 221 is bonded and electrically connected between the first connection electrode 141 of the light emitting device 100 and the first lead frame 215. The second bonding member 222 is bonded and electrically connected between the second connection electrode 143 of the light emitting device 100 and the second lead frame 217. The first attachment member 221 may have a width larger than the width of the first connection electrode 141 of the light emitting device 100 and may be in surface contact with the support member 151, May have a width larger than the width of the second connection electrode 143 of the light emitting device 100 and may be in surface contact with the support member 151. [ The heat radiation efficiency of the light emitting device 100 can be increased in proportion to the contact area of the first adhesive member 221 and the second adhesive member 222. [

The lower surface of the support member 151 of the light emitting device 100 may be spaced apart from the upper surfaces of the first and second lead frames 215 and 217 at regular intervals. An insulating bonding member may be further disposed between the lower surface of the support member 151 of the light emitting device 100 and the upper surface of the first and second lead frames 215 and 217. For the heat conductivity, And may be formed of a material such as TiO ₂ or SiO ₂ added to a resin material such as silicon.

The light emitting device 100 may be disposed at the center of the bottom of the cavity 212 to improve the directivity distribution of the light emitted from the light emitting device package 200.

The light emitting device 100 described above is an example of the light emitting device of FIG. 1, and the light emitting device of another embodiment may be selectively applied. Alternatively, the light emitting device 100 may be provided with a substrate 111, have.

The translucent resin layer 21 includes a transparent resin such as silicone or epoxy. The translucent resin layer 21 may be a layer that does not include a phosphor or may be a layer that separates the phosphor from the light emitting device 100. Alternatively, the light transmitting resin layer 21 may be a layer for separating the phosphor layer 22, that is, the phosphor from the light emitting structure 120 of the light emitting device 100.

The refractive index of the light-transmitting resin layer 21 may be lower than 2.0 and lower than the refractive index of the light emitting structure 120, for example, between 1.2 and 1.7. The upper surface 21-1 of the translucent resin layer 21 may be formed as a flat surface. The upper surface 21-1 of the translucent resin layer 21 may be formed with a light extracting structure like a concavo-convex pattern, but the invention is not limited thereto.

The upper surface 21-1 of the light transmitting resin layer 21 and the upper surface of the light emitting device 100 are spaced apart from each other by a first distance T1 and the first distance T1 may be 0.1 탆 or more.

The translucent resin layer 21 may separate the light emitting device 100 from the phosphor layer 22 to guide the light emitted from the light emitting device 100 to the entire area.

The phosphor layer 22 is formed on the translucent resin layer 21. The translucent resin layer 21 is formed of a resin material such as silicone or epoxy, and includes a fluorescent material therein. The phosphor may be selectively formed from YAG, TAG, Silicate, Nitride, and Oxy-nitride based materials. The phosphor includes at least one of a blue phosphor, a red phosphor, a yellow phosphor, and a green phosphor, and excites a part of light emitted from the light emitting structure 120 to emit light with a different wavelength. Blue phosphor Sr ₂ MgSi ₂ O _7: material, BaMgAl ₁₀ O of _{^{Eu 2+ 17: Eu (Mn)}} , Sr 5 Ba 3 MgSi 2 O 8: Eu 2 +, Sr 2 P 2 O 7: Eu 2 +, _{SrSiAl 2 O 3 N 2: Eu} 2+, (Ba 1 - x Sr x) SiO 4: Eu 2 +, (Sr, Ca, Ba, Mg) 10 (PO 4) 6 C l2: Eu 2 +, CaMgSi 2 O ₆ : Eu ^{2 +} . Red phosphor ^{_{La 2 O 2 S: Eu 3+}} , Y 2 O 2 S: Eu 3 +, Y 2 O 3: Eu 3 + (Bi 3 +), CaS: Eu 2 +, (Zn, Cd) S: ^{Ag + (Cl -), K} 5 (WO 4) 6.25: Eu 3 + 2.5, LiLa 2 O 2 BO 3: may include at least one of Eu ^3+. Green phosphor ^{ZnS: Cu + (Al 3 +} ), SrGa 2 S 4: Eu 2 +, CaMgSi 2 O 7: Eu 2 +, Ca 8 Mg (SiO 4) Cl 2: Eu 2+ (Mn 2+), _{(Ba, Sr) 2 SiO 4} : may include at least one of Eu _{2 +.} The yellow phosphor may include at least one of Y ₃ Al ₅ O ₁₂ : Ce ^{3 +} , and Sr ₂ SiO ₄ : Eu ^{2 +} .

The phosphor composition of the phosphor layer 22 may be used in the range of 0.1-99 wt%, for example, 5-50 wt%. The thickness of the phosphor layer 22 may be less than the thickness of the light transmitting resin layer 21, and may be in a range of, for example, 1-100,000 mu m, for example, 1-50 mu m. The phosphor layer 22 may have a refractive index equal to or lower than that of the light transmitting resin layer 21.

The phosphor layer 22 may be spaced at least 201 탆 or more from the bottom of the cavity 212. It is possible to remove the phosphor layer 22 from the light emitting device 100 and to prevent occurrence of a ring shape in a color coordinate distribution. When the light emitting device 100 is mounted in a flip manner, a first conductivity type semiconductor layer (for example, an n-type semiconductor layer) thicker than the second conductivity type semiconductor layer Semiconductor layer) and a transparent substrate 111 are arranged. Accordingly, the gap between the active layer and the phosphor layer 22 can be further spaced apart from other chip structures. As a result, a path through which light travels can be ensured and the color distribution can be improved. It is also seen that the luminous flux is increased at a current of 1.5 times or more than that of the comparative example M1 as shown in the luminous flux graph according to the current increase of the embodiment M1 of FIG. 34, the forward voltage VF according to the current can also be lowered in the embodiment (M1).

The reflective electrode layer 130 of the light emitting device 100 is disposed below the light emitting structure 120 to reflect light traveling downward from the light emitting structure 120. The light emitted from the light emitting device 100 is transmitted through the light transmitting resin layer 21 and the light transmitted through the light transmitting resin layer 22 is emitted through the phosphor layer 22. At this time, the phosphor of the phosphor layer 22 wavelength-converts a part of light and emits light of a longer wavelength than the light emitted from the light emitting structure 120.

22 is a view showing a light emitting device package having the light emitting element of Fig. 1 as a ninth embodiment. In describing the ninth embodiment, the same components as those in Fig. 21 will be described with reference to the description of Fig.

22, the light emitting device package includes a body 211 having a cavity 212, a plurality of lead frames 215 and 217 disposed in the cavity 212 of the body 211, A translucent resin layer 21 disposed on the cavity 212 to cover the light emitting element 100 and a phosphor layer 22 on the translucent resin layer 21, ).

The upper surface 21-1 of the translucent resin layer 21 has a concave shape and is formed to have a height gradually increasing from the center area to the outer area with respect to the bottom of the cavity 212. [

The phosphor layer 22 is spaced from the upper surface of the light emitting device 100. The light emitting device 100 may be spaced apart from the phosphor layer 22 by a second interval T2 and the second interval T2 may be at least 0.1 m or more.

The upper surface 22-1 of the phosphor layer 22 may be formed in a concave shape. Since the upper surface 22-1 of the phosphor layer 22 is concave, the directivity angle distribution of the emitted light can be increased.

The phosphor layer 22 may have the same thickness as the center region and the outer region. When the thickness of the phosphor layer 22 is formed to a constant thickness, the luminance distribution of the light emitted from the phosphor layer 22 may be uniform.

Fig. 23 is a tenth embodiment, which includes the light emitting device package having the light emitting element of Fig. In describing the tenth embodiment, detailed description of the same components as those in FIG. 21 or 22 will be omitted.

23, the light emitting device package includes a body 211 having a cavity 212, a plurality of lead frames 215 and 217 disposed in the cavity 212 of the body 211, A translucent resin layer 21 disposed on the cavity 212 to cover the light emitting element 100 and a phosphor layer 22 on the translucent resin layer 21, ).

The phosphor layer 22 is spaced apart from the light emitting structure 120 such that the phosphor layer 22 is spaced apart from the upper surface of the light emitting device 100 by a second interval T2, As shown in FIG.

The upper surface 22-1 of the phosphor layer 22 may be formed as a flat or concave surface. The phosphor layer 22 includes a concave portion 22-2 at the central portion thereof and the concave portion 22-2 is formed in the center of the light emitting element 22-2 with respect to the extension line of the upper surface 22-1 of the phosphor layer 22. [ (100) direction. Accordingly, the central portion of the concave portion 22-2 has the thinnest thickness and is arranged to correspond to the center of the light emitting device 100. [ The concave portion 22-2 may have a conical shape, a polygonal shape, or a hemispherical shape when viewed from the side end face. The structure of the concave portion 22-2 may be a part of the light incident from the light emitting element 100 The critical angle can be changed or the total reflection can be performed.

A support portion 213 is disposed under the body 211 and a portion 217A of the first lead frame 215 and a portion 217A of the second lead frame 217 217A may be bent from the first and second lead frames 215, The supporting portion 213 may be injection-molded using the same material as the body 211, or may be bonded to each other using different materials, but the present invention is not limited thereto.

Fig. 24 is a eleventh embodiment, which includes a light emitting device package having the light emitting element of Fig. In the description of the eleventh embodiment, the same elements as those in FIG. 21 or 22 will not be described in detail.

Referring to FIG. 24, in the light emitting device package, the upper surface 22-3 of the phosphor layer 22 may be formed in a concavo-convex pattern. The shape of the concavo-convex pattern includes a polygonal shape or a horn shape, and iron patterns having a constant interval or irregular intervals may be arranged.

25 is a side sectional view of a light emitting device package having the light emitting device 100A of Fig. 12 as a twelfth embodiment. In explaining FIG. 25, the description of the components in FIGS. 21 to 24 will be referred to.

25, the light emitting device package includes a body 211 having a cavity 212, a plurality of lead frames 215 and 217 disposed in the cavity 212 of the body 211, A translucent resin layer 21 disposed on the cavity 212 and covering the light emitting element 100A; and a phosphor layer 24 on the translucent resin layer 21, And a lens 25, as shown in Fig.

The upper surface 21-2 of the light transmitting resin layer 21 may be disposed at least higher than the upper surface of the light emitting device 100A and the center region may be in contact with the upper surface of the light emitting device 100A. When the height of the upper surface 21-2 of the translucent resin layer 21 is viewed, the height of the outer region is high and the height of the center region is low with respect to the bottom of the cavity 212.

Since the plurality of protrusions 11 of the substrate 111 protrude toward the phosphor layer 24, the light extraction efficiency of the light emitting device 100A can be increased. Accordingly, the phosphor layer 24 is in contact with the plurality of protrusions 11, and light having a critical angle changed by the plurality of protrusions 11 can be effectively incident on the phosphor layer 24. Accordingly, the color conversion efficiency by the phosphor layer 24 can be improved.

A lens 25 is disposed on the phosphor layer 24 and a concave portion 25-1 is formed in the center of the hemispherical shape of the lens 25. The concave portion 25-1 may be recessed in the direction of the light emitting device 100A and may have a full reflecting surface. The lens 25 can broaden the distribution of the light directing angle by reflecting the light incident by the concave portion 25-1 in the side direction.

26 is a side sectional view of a light emitting device package having the light emitting device 100 of Fig. 1 as a thirteenth embodiment. In the description of Fig. 26, the description of the components described above will be referred to.

26, the light emitting device package includes a body 211 having a cavity 212, a plurality of lead frames 215 and 217 disposed in a cavity 212 of the body 211, A translucent resin layer 21 disposed on the cavity 212 to cover the light emitting element 100 and a phosphor layer 22 on the translucent resin layer 21, ).

The light transmissive resin layer 21 is formed in a spherical shape having a convex surface on the upper surface 21-3 and a center region thereof is formed to be thicker than a top surface height of the light emitting device 100, As shown in FIG.

The phosphor layer 22 is formed on the light transmitting resin layer 21 and is spaced from the upper surface of the light emitting device 100. The phosphor layer 22 may have a structure in which the thickness T3 of the center region is the thinnest and the thickness of the outer region is the thickest. As another example, the upper surface of the phosphor layer 22 may be formed in a concave shape or a convex shape, but the invention is not limited thereto.

27 is a side sectional view of a light emitting device package having the light emitting device 100 of Fig. 1 as a fourteenth embodiment. In the description of FIG. 27, the description of the components described above will be referred to.

27, the light emitting device package includes a body 211 having a cavity 212, a plurality of lead frames 215 and 217 disposed in the cavity 212 of the body 211, And a phosphor layer 51 disposed on the cavity 212 and covering the light emitting device 100. The light emitting device 100 includes a light emitting device 100,

The phosphor layer 51 includes a plurality of layers P1-PN and the first layer P1 is formed so as to cover the surface of the light emitting device 100, Is formed so as to cover the surface of the first layer (P1). In this way, N (two or more natural number) layers can be stacked, and moisture penetration can be prevented. The first N layer PN may be formed in a flat, concave, or convex shape on its top surface, or may have a concavo-convex pattern.

Each of the plurality of layers P1-PN may be formed of a phosphor emitting the same color, or at least two layers may be added to a phosphor emitting the same color. As another example, the content of phosphor added in each layer (P1-PN) gradually increases in the direction from the first layer (P1) to the Nth layer (PN) It can be formed to be gradually reduced. Alternatively, the plurality of layers (P1-PN) may have different phosphor contents, for example, the first layer (P1) and the Nth layer (PN) may have the least amount of phosphor content compared to the other layers .

Here, the thicknesses of the first layer (P1) and the N-layer (PN) may be thicker than those of the other layers. This is because the first layer P1 protects the phosphor from heat generated from the light emitting device 100, and the Nth layer PN can prevent moisture penetration from the outside and protect the surface.

The phosphor composition of each layer P1-PN may be in the range of 0.1-99 wt%, for example, 5-50 wt%, and the thickness of each layer may be in the range of 1-100000 mu m, for example, 1-50 mu m have. Since the phosphor layer 51 is formed of a plurality of layers P1-PN as described above, the color coordinate distribution is distributed on the R1 region as in the embodiment M1 of Fig.

28 is a side sectional view of a light emitting device package having the light emitting device 100 of FIG. 1 as a fifteenth embodiment. In the description of Fig. 28, the description of the components described above will be referred to.

28, the light emitting device package includes a body 211 having a cavity 212, a plurality of lead frames 215 and 217 disposed in the cavity 212 of the body 211, A translucent resin layer 31 disposed on the cavity 212 and covering the light emitting element 100 and a phosphor layer (not shown) disposed on the translucent resin layer 31 52).

The translucent resin layer 31 does not have a phosphor and can separate the phosphor from the light emitting element 100. [ The upper surface of the light-transmissive resin layer 31 may be formed on the upper surface of the light emitting device 100, but the present invention is not limited thereto.

The phosphor layers 52 may be formed of a plurality of layers (P11-PN, N being a natural number of 2 or more), and the plurality of layers P11-PN may include phosphors emitting light of the same color, A phosphor capable of emitting light of a different color may be added, but the present invention is not limited thereto.

The phosphor layers of the plurality of layers P11-PN may have different compositions. For example, the phosphor may be added to the light emitting device 100 to gradually decrease the phosphor content, or the phosphor may be added thereto gradually. By changing the content of the phosphor, the color tone can be improved.

A lens 33 may be disposed on the phosphor layer 52 and the body 211. The lens 33 has a hemispherical shape, and the top surface 33-1 of the lens 33 may be formed in a concavo-convex pattern, but the present invention is not limited thereto.

29 is a side cross-sectional view of a light emitting device package having the light emitting device 100 of FIG. 1 as a sixteenth embodiment. In describing Fig. 29, reference will be made to the description of the components described above.

29, the light emitting device package includes a body 211 having a cavity 212, a plurality of lead frames 215 and 217 disposed in the cavity 212 of the body 211, A light transmitting element layer 53 disposed on the cavity 212 and covering the light emitting element 100 and a phosphor layer (not shown) disposed on the light transmitting resin layer 53. The light emitting element 100, 54).

The upper surface of the light transmitting resin layer 53 is formed to have a lower thickness than the upper surface of the light emitting device 100. For example, the light emitting structure 120 or the reflective electrode layer 130 of the light emitting device 100, The height T5 may be less than the height T5. The upper surface of the light transmitting resin layer 53 may be formed to have a height between the reflective electrode layer 130 and the light emitting structure 120.

The light transmitting resin layer 53 may be doped with SiO ₂ or TiO ₂ having a high refractive index and may increase the light reflectance. The light transmitting resin layer 53 can reflect the light leaking to the outside of the reflective electrode layer 130 without being lost by the adhesive members 221 and 222. The reflectivity of the translucent resin layer 53 may be higher than that of the phosphor layer 54. [

The phosphor layer 54 may be formed of a plurality of layers P21-PN (N: 2 or more natural numbers) on the light-transmitting resin layer 53, and at least one of the plurality of layers P21- (P21) is brought into contact with the side surface of the light emitting structure 120, thereby converting a part of light into a wavelength. The plurality of layers P21-PN may include phosphors emitting different lights or phosphors emitting the same light, and at least one of the layers may have a different phosphor content than the other layers.

The phosphor layer 54 may be disposed on the side surface and the upper surface of the light emitting device 100 to maximize the wavelength conversion to improve the color mixing ratio.

30 is a side sectional view of a light emitting device package having the light emitting device 100 of Fig. 1 as a seventeenth embodiment. In describing Fig. 30, the description of the components described above will be referred to.

30, the light emitting device package includes a body 211 having a cavity 212, a plurality of lead frames 215 and 217 disposed in the cavity 212 of the body 211, A light emitting device 100 having a first phosphor layer 58 on the light emitting device 100 and a light transmitting resin layer 55 and 56 disposed on the cavity 212 to cover the light emitting device 100, And a second phosphor layer (57) disposed on the second phosphor layer (56).

The first phosphor layer 58 is formed on the upper surface of the substrate 111 such that the first phosphor layer 58 is formed in the same area as the upper surface area of the light emitting device 100, do. The first phosphor layer 58 includes at least one of a red phosphor, a green phosphor, a yellow phosphor, and a blue phosphor. The first phosphor layer 58 may not be formed.

The light transmitting resin layers 55 and 56 include a first light transmitting resin layer 55 disposed between the light emitting structure 120 and the reflective electrode layer 130 and a second light transmitting resin layer 55 between the first light transmitting resin layer 55 and the second phosphor layer And a second translucent resin layer (56) disposed between the first and second transparent resin layers. The upper surface of the second translucent resin layer 56 may have the same height as the upper surface of the light emitting device 100, but the present invention is not limited thereto.

The first light-transmissive resin layer 55 and the second may be formed of a highly reflective layer than the light-transmitting resin layer 56 is, for example, a SiO ₂ or TiO ₂ can be added to the inside more than 0.1wt%. Accordingly, the light reflectance of the first light transmitting resin layer 55 is higher than that of the second light transmitting resin layer 56, so that the light loss can be reduced. The second translucent resin layer 56 guides the incident light to proceed.

The second phosphor layer 57 is disposed on the second translucent resin layer 56 and the first phosphor layer 58 and has a color different from that of the phosphor of the first phosphor layer 58 .

The first and second phosphor layers 58 and 57 include phosphors emitting different colors, thereby improving the color of the light emitting device package.

31 is a side sectional view of a light emitting device package having the light emitting device 100 of FIG. 1 as an eighteenth embodiment. In the description of FIG. 31, the description of the components described above will be referred to.

31, the light emitting device package includes a body 211B having a cavity 212, a plurality of lead frames 215 and 217 disposed in the cavity 212 of the body 211B, A light transmitting element layer 61 disposed on the cavity 212 and covering the light emitting element 100; and a light emitting element 100 disposed on the light transmitting resin layer 61 and the body 211B And a phosphor layer 62 disposed on the phosphor layer 62.

The body 211B may be formed of a material having a transmittance of 0.1% or more, and may include at least one of silicon, epoxy, and PPA. A fluorescent material such as a blue fluorescent material may be added to the body 211B, but the present invention is not limited thereto.

The phosphor layer 211B may be formed on the surface of the body 211B and the upper surface of the light transmitting resin layer 61. [ The phosphor layer 211B can convert a part of light transmitted through the translucent resin layer 61 and a part of light transmitted through the body 211B.

32 is a side sectional view of a light emitting device package having the light emitting device 100 of FIG. 1 as a comparative example. In the description of Fig. 32, reference will be made to the description of the components described above.

32, the light emitting device package includes a body 211B having a cavity 212, a plurality of lead frames 215 and 217 disposed in a cavity 212 of the body 211B, And a translucent resin layer 71 disposed on the cavity 212 and covering the light emitting device 100. The light emitting device 100 includes a light emitting device 100 having a phosphor layer 72 on a substrate 210,

The phosphor layer 72 is disposed on the surface of the light emitting device 100 and the light emitting structure 120 and the phosphor layer 72 are disposed closely to each other so that the wavelength conversion efficiency of light emitted from the light emitting structure 120 is lowered . Further, the phosphor may be disposed adjacent to the surface of the light emitting device 100, and the phosphor may be damaged by the heat generated from the light emitting device 100.

The light flux, forward voltage, and color coordinate distribution of the light emitting device package (any one of Figs. 21 to 31) and the light emitting device package (Fig. 32) of the comparative example of the above- .

FIG. 33 is a graph comparing the luminous fluxes according to the currents of the embodiment and the comparative example. In the embodiment (M1), the luminous flux according to the increase of the input current is increased 1.5 times or more as compared with the luminous flux of the comparative example (M2).

Fig. 34 is a graph comparing the input current and the forward voltage in the embodiment and the comparative example, and the forward voltage of the embodiment M1 can be driven lower than that of the comparative example M2.

35 shows the color distributions of the examples and the comparative examples. The distribution of the color coordinates of the example (M1) and the comparative example (M2, M3) shows that the comparative example 1 (M2) is distributed in the R2 distribution area (M3) are distributed in the R3 distribution area, and the embodiments (M1) are distributed in the R1 distribution area. The difference (G1) between the distribution region R2 and the R3 distribution region has a difference (average) of 0.5Cd or more, and the difference (G2) between the distribution regions R3 and R2 has a difference (average) of 0.3Cd or more. Here, the embodiment (M1) is an example of the light emitting device package of Figs. 27 to 30. Comparative Example 1 (M1) is a light emitting device package of Fig. 32, and Comparative Example 2 (M3) is a structure in which a phosphor layer doped with a phosphor is dispensed in a cavity with a single layer structure. The color coordinate distribution of the embodiment is distributed in a more uniform region than the color coordinate distribution of Comparative Examples 1 and 2.

<Lighting system>

The light emitting device 100 or the light emitting device package 200 according to the embodiment may be applied to a light unit. The light unit will be described by way of example in which a plurality of light emitting device packages 200 are arranged. The display device shown in Figs. 36 and 37, and the lighting device shown in Fig. 38, and may include an illumination lamp, a traffic light, a vehicle headlight, an electric signboard, and the like.

36 is an exploded perspective view of the display device according to the embodiment.

36, a display device 1000 according to an embodiment includes a light guide plate 1041, a light emitting module 1031 for providing light to the light guide plate 1041, and a reflection member 1022 An optical sheet 1051 on the light guide plate 1041, a display panel 1061 on the optical sheet 1051, the light guide plate 1041, a light emitting module 1031, and a reflecting member 1022 But the present invention is not limited thereto.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 serves to diffuse light into a surface light source. The light guide plate 1041 may be made of a transparent material such as acrylic resin such as polymethyl methacrylate (PET), polyethylene terephthalate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate Resin. &Lt; / RTI &gt;

The light emitting module 1031 provides light to at least one side of the light guide plate 1041, and ultimately acts as a light source of the display device.

The light emitting module 1031 may include at least one light source, and may provide light directly or indirectly from one side of the light guide plate 1041. The light emitting module 1031 includes a module substrate 1033 and a light emitting device package 200 according to the embodiment described above and the light emitting device package 200 is mounted on the module substrate 1033 at a predetermined interval, . As another example, the light emitting device 100 according to the embodiment may be arrayed on the module substrate 1033.

The module substrate 1033 may be a printed circuit board (PCB) including a circuit pattern (not shown). However, the module substrate 1033 may include not only a general PCB, but also a metal core PCB (MCPCB), a flexible PCB (FPCB), and the like. When the light emitting device package 200 is mounted on the side surface of the bottom cover 1011 or on the heat radiation plate, the module substrate 1033 can be removed. Here, a part of the heat radiating plate may be in contact with the upper surface of the bottom cover 1011.

The plurality of light emitting device packages 200 may be mounted on the module substrate 1033 such that the light emitting surface is spaced apart from the light guiding plate 1041 by a predetermined distance. However, the present invention is not limited thereto. The light emitting device package 200 may directly or indirectly provide light to at least one side surface of the light guide plate 1041. However, the present invention is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflection member 1022 reflects the light incident on the lower surface of the light guide plate 1041 so as to face upward, thereby improving the brightness of the light unit 1050. The reflective member 1022 may be formed of, for example, PET, PC, or PVC resin, but is not limited thereto. The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may house the light guide plate 1041, the light emitting module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be coupled to the top cover, but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, including first and second transparent substrates facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 displays information by light passing through the optical sheet 1051. Such a display device 1000 can be applied to various types of portable terminals, monitors of notebook computers, monitors of laptop computers, televisions, and the like.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light-transmitting sheet. The optical sheet 1051 may include at least one of a sheet such as a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The diffusion sheet diffuses incident light, and the horizontal and / or vertical prism sheet condenses incident light into a display area. The brightness enhancing sheet improves the brightness by reusing the lost light. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

Here, the optical path of the light emitting module 1031 may include the light guide plate 1041 and the optical sheet 1051 as an optical member, but the present invention is not limited thereto.

37 is a view showing a display device according to the embodiment.

37, the display device 1100 includes a bottom cover 1152, a module substrate 1120 on which the above-described light emitting device package 200 is arrayed, an optical member 1154, and a display panel 1155 do.

The module substrate 1120 and the light emitting device package 200 may be defined as a light emitting module 1160. The bottom cover 1152, the at least one light emitting module 1160, and the optical member 1154 may be defined as a light unit 1150. On the module substrate 1120, light emitting devices may be mounted and arrayed in a flip manner. Also, the light emitting device package disclosed in the embodiment may be arrayed on the module substrate 1120. The bottom cover 1152 may include a receiving portion 1153, but the present invention is not limited thereto.

Here, the optical member 1154 may include at least one of a lens, a light guide plate, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The light guide plate may be made of a PC material or a PMMA (poly methy methacrylate) material, and such a light guide plate may be removed. The diffusion sheet diffuses incident light, and the horizontal and vertical prism sheets condense incident light into a display area. The brightness enhancing sheet enhances brightness by reusing the lost light.

38 is a perspective view of a lighting apparatus according to the embodiment.

Referring to FIG. 38, the lighting apparatus 1500 includes a case 1510, a light emitting module 1530 installed in the case 1510, a connection terminal (not shown) installed in the case 1510 and supplied with power from an external power source 1520).

The case 1510 is preferably formed of a material having a good heat dissipation property, and may be formed of, for example, a metal material or a resin material.

The light emitting module 1530 may include a module substrate 1532 and a light emitting device package 200 mounted on the module substrate 1532 according to an embodiment. A plurality of the light emitting device packages 200 may be arrayed in a matrix or at a predetermined interval. On the module substrate 1532, a light emitting device may be mounted in a flip manner.

The module substrate 1532 may have a circuit pattern printed on an insulator. For example, the module substrate 1532 may be a printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB And the like.

In addition, the module substrate 1532 may be formed of a material that efficiently reflects light, or may be a coating layer of a color such as white, silver, or the like whose surface is efficiently reflected.

At least one light emitting device package 200 may be mounted on the module substrate 1532. Each of the light emitting device packages 200 may include at least one LED (Light Emitting Diode) chip. The LED chip may include a colored light emitting diode that emits red, green, blue, or white colored light, and a UV light emitting diode that emits ultraviolet (UV) light.

The light emitting module 1530 may be arranged to have a combination of various light emitting device packages 200 to obtain colors and brightness. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be arranged in combination in order to secure a high color rendering index (CRI).

The connection terminal 1520 may be electrically connected to the light emitting module 1530 to supply power. The connection terminal 1520 is connected to the external power source by being inserted in a socket manner, but the present invention is not limited thereto. For example, the connection terminal 1520 may be formed in a pin shape and inserted into an external power source or may be connected to an external power source through wiring.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to one embodiment. Further, the features, structures, effects, and the like illustrated in the embodiments can be combined and modified by other persons having ordinary skill in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

21, 31, 53, 55, 56, 61, 71:
22, 24, 51, 52, 54, 57,
25, 33: Lens
100, 100A, 101: light emitting element 111: substrate
113: first semiconductor layer 115: first conductive type semiconductor layer
117: active layer 119: second conductive type semiconductor layer
120: light emitting structure 130: reflective electrode layer
121, 123: insulating layer 131, 132: electrode
133, 134, 135, and 136: junction electrodes 141, 141A, and 143:
151, 152, 152A, 153, 153A:
200: Light emitting device package
215, 217: Lead frame
221, 222:

Claims (17)

A body having a cavity;
A plurality of lead frames disposed in the cavity;
A light emitting element disposed on the plurality of lead frames;
A plurality of adhesive members disposed between the light emitting element and the plurality of lead frames;
A translucent resin layer disposed in the cavity; And
And a phosphor layer disposed on the light-transmissive resin layer and the light-emitting element,
The plurality of lead frames including first and second lead frames spaced from each other,
The light emitting device includes a first conductivity type semiconductor layer, a second conductivity type semiconductor layer below the first conductivity type semiconductor layer, and an active layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer structure; A reflective electrode layer under the second conductive semiconductor layer; A first electrode structure disposed under the first conductive semiconductor layer and having a plurality of conductive layers; A second electrode structure disposed below the reflective electrode layer and having a plurality of conductive layers; An insulating layer disposed between the light emitting structure, the first electrode structure, and the second electrode structure; At least one first connection electrode disposed under the first electrode structure and electrically connected to the first lead frame; At least one second connection electrode disposed under the second electrode structure and electrically connected to the second lead frame; And a support member disposed around the at least one first connection electrode and the at least one second connection electrode,
Wherein the support member includes a first support member and a second support member that are spaced apart from each other by a separation groove,
Wherein the first supporting member is disposed around the first connecting electrode and the second supporting member is disposed around the second connecting electrode,
Wherein the first and second support members comprise an insulating or conductive material,
And a part of the back surface of the insulating layer is exposed by the separation groove. The light emitting device package according to claim 1, wherein the light transmitting resin layer comprises multiple layers, and the lower layer of the light transmitting resin layer is in non-contact with the phosphor layer and contacts at least one of a side surface of the cavity and an upper surface of the lead frame. The light emitting device according to claim 1 or 2, wherein at least one of concave portions recessed toward the light emitting element in the upper surface center region of the phosphor layer, and at least one of an upper surface of the light transmitting resin layer and an upper surface of the phosphor layer Emitting device package. The light emitting device according to claim 1 or 2, wherein the light emitting device includes a light transmitting substrate on the light emitting structure, the substrate includes a plurality of protrusions on an upper surface thereof,
Wherein the plurality of protrusions protrude from the interface between the phosphor layer and the light-transmitting resin layer toward the phosphor layer,
Wherein the insulating layer has a DBR (Distributed Bragg Reflection) structure. 5. The phosphor according to claim 4, further comprising a lens having a concave portion disposed at a central portion on the body and the phosphor layer,
The lens is in contact with the phosphor layer and the upper surface of the body,
Wherein the upper surface of the lens has a gradually lower height toward the top edge of the body.  The light emitting device package according to claim 1 or 2, wherein the light transmitting resin layer includes a first region disposed above the upper surface of the light emitting element and a second region disposed at a lower height than the upper surface of the light emitting element. The light-emitting device according to claim 1, wherein the upper surface of the light-transmitting resin layer is disposed below the height of the reflective electrode layer of the light-
Wherein the light transmitting resin layer has a reflectance higher than that of the phosphor layer. The light emitting device according to claim 1, wherein the light transmitting resin layer comprises: a first light transmitting resin layer formed at a lower height of the reflective electrode layer of the light emitting element; And a second translucent resin layer disposed between the first translucent resin layer and the phosphor layer,
Wherein a reflectivity of the first light transmitting resin layer is higher than a reflectance of the second light transmitting resin layer. The optical module according to claim 1 or 2, wherein the body comprises a silicon or epoxy material having a light transmittance,
Wherein the phosphor layer is disposed on at least one of an upper surface and a side surface of the body. The phosphor according to claim 1 or 2, wherein the phosphor layer is formed by laminating a plurality of layers having different phosphor contents,
Wherein the plurality of layers of the phosphor layer gradually increase in the phosphor content as the distance from the light emitting element increases. The light emitting device package according to claim 1, wherein the lower surface of the support member is disposed on the same plane as the lower surface of the first connection electrode and the lower surface of the second connection electrode. The light emitting device package according to claim 1, wherein a height of the second supporting member is lower than a maximum height of the first supporting member and corresponds to a height of the separating groove. The light emitting device package according to claim 1, wherein an interval between the first supporting member and the second supporting member is one third or more of a length of either side of the light emitting structure. The light emitting device package according to claim 1, wherein the light transmitting resin layer surrounds the side surface and the back surface of the light emitting element. delete delete delete

Images