KR20180087610A - Lighting source module and lighting apparatus having thereof - Google Patents

Abstract

The present invention relates to a light source module which improves light flux of light emitted through a phosphor layer. The light source module according to an embodiment of the present invention comprises: a circuit board; a plurality of semiconductor chips disposed on the circuit board; a reflective member disposed around the plurality of semiconductor chips; a phosphor layer disposed on the plurality of semiconductor chips and the reflective member; and a translucent resin layer disposed on the phosphor layer.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a light source module,

The present invention relates to a light source module.

The present invention relates to a lighting apparatus having a light source module.

BACKGROUND ART A light emitting device, for example, a light emitting device (Light Emitting Device) is a type of semiconductor device that converts electrical energy into light, and has been widely recognized as a next generation light source in place of existing fluorescent lamps and incandescent lamps.

Since the light emitting diode generates light by using a semiconductor element, the light emitting diode consumes very low power as compared with an incandescent lamp that generates light by heating tungsten, or a fluorescent lamp that generates ultraviolet light by impinging ultraviolet rays generated through high-pressure discharge on a phosphor .

In addition, since the light emitting diode generates light using the potential gap of the semiconductor device, it has a longer lifetime, faster response characteristics, and an environment-friendly characteristic as compared with the conventional light source.

Accordingly, a lot of researches for replacing an existing light source with a light emitting diode have been carried out. The light emitting diode is used as a light source for various lamps used in indoor and outdoor, lighting devices such as a liquid crystal display, .

The embodiment provides a light source module that improves the light flux of light emitted through the phosphor layer.

The embodiment provides a light source module in which a phosphor layer and a translucent resin layer are disposed on a plurality of semiconductor chips and the phosphor layer.

The embodiment provides a light source module in which at least one of the reflective member and the outer protective portion of the translucent resin layer is disposed on the side surface of the phosphor layer disposed on the semiconductor chip.

The embodiment provides a light source module in which a translucent resin layer disposed on a phosphor layer has a light extracting structure.

An embodiment provides a lighting device having a light source module.

A circuit board according to an embodiment; A plurality of semiconductor chips disposed on the circuit board; A reflective member disposed around the plurality of semiconductor chips; A plurality of semiconductor chips and a phosphor layer disposed on the reflective member; And a translucent resin layer disposed on the phosphor layer.

According to the illumination device of the embodiment, the light source module; An inner lens on the plurality of light source modules; And an outer lens on the inner lens.

According to the embodiment, the reflective member may include a resin material having an area larger than a lower surface area of the phosphor layer on the circuit board.

According to an embodiment, the reflective member may include a side reflector disposed on a side surface of the phosphor layer.

According to the embodiment, the light-transmitting resin layer may include a light extracting structure.

According to the embodiment, the light-transmitting resin layer includes an incident portion disposed on the phosphor layer and a light extracting structure on the incident portion, and the light extracting structure includes a horn-shaped, hemispherical lens or an aspherical surface Of the lens.

According to the embodiment, the light transmitting resin layer may be formed of a resin material having a refractive index lower than that of the phosphor layer.

According to the embodiment, the light-transmissive resin layer may include an outer protective portion disposed on the outer periphery of the light extracting structure. The outer guard may be disposed on at least one of an upper surface of the phosphor layer and an upper surface of the reflective member.

According to the embodiment, the light transmitting resin layer may include an outer protective portion disposed outside the side reflecting portion of the reflecting member.

According to an embodiment of the present invention, a light guide layer made of a transparent resin material may be disposed between the reflective member and the semiconductor chip.

The light source module according to the embodiment can efficiently extract the light emitted from the semiconductor chip by arranging the resin layer on the phosphor layer.

The embodiment can prevent the reflection member disposed around the semiconductor chip from partially penetrating the side surface and the upper surface of the phosphor layer, thereby preventing a decrease in light loss and a decrease in light speed.

The embodiment can reduce the color deviation emitted through the phosphor layer.

The embodiment can improve the light flux of the light source module.

Embodiments can improve the optical reliability of the light source module and the illumination device having the same.

1 is a plan view of a light source module according to a first embodiment.
2 is a cross-sectional view of the light source module of Fig. 1 on the AA side.
3 is a partial enlarged view of the light source module of Fig.
4 is a sectional view of the light source module of Fig. 1 on the BB side.
5 is another example of the light source module of Fig.
6 is a first modification of the light source module of Fig.
FIG. 7 is a second modification of the light source module of FIG. 2. FIG.
8 is a side sectional view of the light source module according to the second embodiment.
Fig. 9 is a partially enlarged view of the light source module of Fig. 8; Fig.
10 is a view showing another shape of the light extracting structure of the light source module of FIG.
11 is a first modification of the light source module of Fig.
12 is a second modification of the light source module of Fig.
13 is a third modification of the light source module of Fig.
14 is a fourth modification of the light source module of Fig.
15 is a fifth modification of the light source module of Fig.
16 is a plan view showing another embodiment of the light source module according to the embodiment.
17 is an example of a lighting apparatus having a light source module according to an embodiment.
18 is a diagram showing an example of a semiconductor chip according to the embodiment.
FIG. 19 is a graph comparing wavelength luminous intensity emitted from the light source module of FIG. 2 and wavelength luminous intensity of a comparative example.
FIG. 20 is a graph comparing wavelength luminous intensity emitted from the light source module of FIG. 6 and wavelength luminous intensity of the comparative example.
FIG. 21 is a diagram comparing the wavelength luminous intensity emitted from the light source module of FIG. 8 and the wavelength luminous intensity of the comparative example.
FIG. 22 is a diagram comparing the wavelength luminous intensity emitted from the light source module of FIG. 14 and the wavelength luminous intensity of the comparative example.

The embodiments may be modified in other forms or various embodiments may be combined with each other, and the scope of the present invention is not limited to each embodiment described below. Although not described in the context of another embodiment, unless otherwise described or contradicted by the description in another embodiment, the description in relation to another embodiment may be understood. For example, if the features of configuration A are described in a particular embodiment, and the features of configuration B are described in another embodiment, even if the embodiment in which configuration A and configuration B are combined is not explicitly described, It is to be understood that they fall within the scope of the present invention.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features and advantages of the present invention will be more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG.

In the description of the embodiment according to the present invention, in the case of being described as being formed "on or under" of each element, the upper (upper) or lower (lower) or under are all such that two elements are in direct contact with each other or one or more other elements are indirectly formed between the two elements. Also, when expressed as "on or under", it may include not only an upward direction but also a downward direction with respect to one element.

The semiconductor device may include various electronic devices such as a light emitting device, a light receiving device, an optical modulator, and a gas sensor. Although the embodiment has been described by way of example of a gas sensor, the present invention is not limited thereto and can be applied to various fields of electric devices.

A semiconductor device according to an embodiment includes a first conductive semiconductor layer; An active layer on the first conductive semiconductor layer; And a light emitting structure including a second conductive semiconductor layer on the active layer. The active layer can selectively emit light in the range of ultraviolet wavelength to visible light wavelength. Such a semiconductor element may be embodied as a chip, and may be defined as a semiconductor chip or a light emitting chip.

Hereinafter, a light source module according to a first embodiment of the present invention will be described with reference to FIGS. 1 to 4. FIG.

1 is a plan view of the light source module according to the first embodiment, FIG. 2 is a sectional view of the light source module of FIG. 1 taken along the line AA, FIG. 3 is a partially enlarged view of the light source module of FIG. 2, Sectional view of the module on the BB side.

1 to 4, a light source module 100 includes a circuit board 110, a semiconductor chip 150 disposed on the circuit board 110, a reflective member (not shown) disposed around the semiconductor chip 150 130, a phosphor layer 170 disposed on the semiconductor chip 150 and the reflective member 130, and a translucent resin layer 180 disposed on the phosphor layer 170.

The light source module 100 according to an embodiment may include a light source such as a blue LED, a green LED, a red LED, a white LED, a laser, and a vertical cavity surface light emission raise (VESEL). The light source module 100 may convert and emit wavelengths of a part of light emitted from one or a plurality of semiconductor chips.

≪ Circuit board 110 >

The circuit board 110 may include a circuit pattern. The circuit board 110 may include at least one of a printed circuit board (PCB), a metal core PCB (MCPCB), a flexible PCB (FPCB), and a ceramic material. The circuit board 110 may include a resin material layer or a ceramic material layer. The resin material may be a thermosetting resin including silicon, epoxy resin, or plastic material, or a material having high heat resistance and high light resistance . The ceramic material includes a low temperature co-fired ceramic (LTCC) or a high temperature co-fired ceramic (HTCC) which is co-fired.

1, the length of the circuit board 110 in the X-axis direction may be longer than the length in the Y-axis direction. Here, the X axis direction may be a direction in which the semiconductor chips 150 are arranged, the Y axis direction is orthogonal to the X axis direction, the Z axis direction is a direction orthogonal to the X and Y axis directions, Lt; / RTI > As another example, the circuit board 110 may have the same length in the X and Y axis directions.

The circuit board 110 may include lead electrodes 112 and 114 on the upper surface thereof and the lead electrodes 112 and 114 may include a first lead electrode 112 and a second lead electrode 114 spaced from each other . At least one or both of the first and second lead electrodes 112 and 114 may be disposed under the semiconductor chip 150. The first and second lead electrodes 112 and 114 may be electrically connected to the semiconductor chip 150. The lead electrodes 112 and 114 of the circuit board 110 are made of a metal such as titanium, copper, nickel, gold, chromium, tantalum, ), Tin (Sn), silver (Ag), and phosphorus (P), and may be formed in multiple layers. A protective layer such as a solder resist may be disposed on the upper surface of the circuit board 110.

A protective chip (not shown) for electrically protecting the semiconductor chip 150 may be disposed on the circuit board 110. The protection chip may be implemented with a thyristor, a zener diode, or a TVS (Transient Voltage Suppression), and the protection chip protects the semiconductor chip 150 from electrostatic discharge (ESD). The protection chip may be implemented in the semiconductor chip 150, but is not limited thereto.

≪ Semiconductor chip 150 >

The semiconductor chip 150 is a light source and selectively emits light in a wavelength band from ultraviolet to visible light. The semiconductor chip 150 includes an ultraviolet (UV) LED chip, a green LED chip, a blue LED chip, or a red LED chip. The semiconductor chip 150 may include devices such as a laser and a VCSEL. The semiconductor chip 150 may have a thickness of 50 탆 or more, for example, in a range of 50 탆 to 300 탆. The thickness of the semiconductor chip 150 may vary depending on the horizontal chip or the vertical chip, and the embodiment may be a vertical chip or a flip chip. The top view shape of the semiconductor chip 150 may be polygonal, for example, square or rectangular. The shape of the top view of the semiconductor chip 150 may be circular or other polygonal shape, but the present invention is not limited thereto.

When the semiconductor chip 150 is a vertical chip, a first lead electrode 112 is disposed below the semiconductor chip 150 as shown in FIGS. 1 and 4, and the second lead electrode 114 is connected to a first lead May be spaced apart from the electrode 112 and connected to the semiconductor chip 150 by a wire 156. The first opening 175 may be formed in the phosphor layer 170 and the translucent resin layer 180 to expose the electrode on the semiconductor chip 150. The reflective member 130 may be provided with the circuit board 110, A second opening 135 may be formed to expose the second lead electrode 114 of the second substrate 110. The first openings 175 may have a circular or polygonal top view, and may be disposed on the semiconductor chips 150, respectively. The second openings 135 may have a polygonal shape or a circular shape and a plurality of wires 175 connected to the semiconductor chips 150 may be inserted or a plurality of wires 175 may be inserted have. 5, first and second lead electrodes (not shown) are disposed below the semiconductor chip 150 to electrically connect the semiconductor chip 150 and the first and second lead electrodes 150, Can be electrically connected.

The lead electrodes 112 and 114 of the circuit board 110 may be formed in various patterns depending on the type of the semiconductor chip 150 and the connection form with the semiconductor chip 150. However, The circuit board 110 may connect the semiconductor chips 150 in series, parallel-to-parallel, parallel, or bottle-to-serial when a plurality of the semiconductor chips 150 are arranged.

4, the semiconductor chip 150 includes a light emitting structure 152 and an electrode layer 154. The light emitting structure 152 includes a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer And can selectively emit light in the wavelength range of ultraviolet to visible light. The light emitting structure 152 may include Group III-V compound semiconductors and Group II-VII compound semiconductors. The electrode layer 154 is connected to the first lead electrode and supplies power, and the electrode 25 on the light emitting structure 152 may be connected by a wire 156. The electrode layer 154 may be formed as a single layer or a multilayer, but the present invention is not limited thereto.

The plurality of semiconductor chips 150 may be arranged in at least one row or column, or may be arranged in two rows and / or two or more columns. The semiconductor chips 150 may be arranged in a plurality of circular regions having a predetermined diameter as shown in FIG.

When a plurality of the semiconductor chips 150 are arranged, they may be spaced apart from each other. The plurality of semiconductor chips 150 may have a predetermined interval or may have different intervals, but the present invention is not limited thereto.

≪ Reflecting member 130 >

The reflective member 130 is disposed on the circuit board 110. The reflective member 130 is disposed on the circuit board 110 around the semiconductor chip 150. The reflective member 130 may be in contact with the surface of the semiconductor chip 150, for example, the side surfaces of the semiconductor chip 150. The upper surface of the reflective member 130 may be disposed at the same height as or lower than the upper surface of the semiconductor chip 150. The reflective member 130 may be disposed in an area between the semiconductor chips 150. The bottom surface area of the reflective member 130 may be equal to or less than the top surface area of the circuit board 110. The upper surface area of the reflective member 130 may be larger than the lower surface area of the phosphor layer 170, thereby reducing light loss. The lower surface of the phosphor layer 170 may be in contact with or attached to the upper surface of the reflective member 130. The reflective member 130 may reflect light traveling to the side surface of the semiconductor chip 150 or may reflect the light reflected by the phosphor layer 170 or the transparent resin layer 180. Therefore, the light loss can be reduced and the light extraction efficiency can be improved.

The reflective member 130 is disposed around the semiconductor chip 150 to reflect light traveling in a lateral direction of the semiconductor chip 150 and reduce light loss.

The reflection member 130 is doped with a metal oxide in a resin material. The resin material includes silicon or epoxy, and the metal oxide includes at least one of Al ₂ O ₃ , TiO _2, and SiO ₂ as a material having a higher refractive index than a resin material. The metal oxide is formed in the reflective member 130 in a range of 5 wt% or more, for example, 5 to 30 wt%. The reflective member 130 may have a reflectance of 90% or more with respect to the light emitted from the semiconductor chip 150. The reflective member 130 may include a resin material such as synthetic resin, and a reflective pattern may be formed on the surface. As the synthetic resin, polyethyleneterephthalate, polyethylene naphthalate, acrylic resin, colicarbonate, polystyrene, polyolefin, cellulosic acid acetate and weather-resistant vinyl chloride may be applied as the synthetic resin.

As shown in FIGS. 2 and 3, the reflective member 130 includes a side reflective portion 132. The side reflector 132 may be disposed on a side surface of the phosphor layer 170. The side reflector 132 may reflect light leaking from the side surface of the phosphor layer 170. Since the side reflecting portion 132 is disposed outside the upper surface of the phosphor layer 170, the side reflecting portion 132 may not affect light extracted through the upper surface of the phosphor layer 170. The side reflective portion 132 of the reflective member 130 may be disposed at a level higher than the lower surface of the phosphor layer 170 and lower or equal to the upper surface of the phosphor layer 170. The side reflector 132 may have a gradually thinner width toward the upper side. Here, the width direction of the side reflector 132 may be a thickness in the X-axis direction or the Y-axis direction with respect to the center of the phosphor layer 170.

The thickness of the reflective member 130 may be equal to or less than the thickness of the semiconductor chip 150. The reflection member 130 is formed after mounting the semiconductor chip 150 so that the reflection member 130 can be moved along the surface of the semiconductor chip 150 by capillary phenomenon. The reflective member 130 is disposed at a height lower than the upper surface of the semiconductor chip 150 and the phosphor layer 170 and the translucent resin layer 180 are disposed on the reflective member 130, It is possible to prevent a part of the reflective member 130 from moving on the upper surface of the semiconductor chip 150 or the upper surface of the phosphor layer 170. [

<Phosphor layer 170>

The phosphor layer 170 may be disposed on the reflective member 130 and the semiconductor chip 150. The phosphor layer 170 may be in contact with the upper surface of the reflective member 130. The length of the phosphor layer 170 may be longer than the length in the Y-axis direction in the X-axis direction, as shown in FIG. The length of the phosphor layer 170 in the X-axis direction may be greater than the distance between the outermost semiconductor chips 150 arranged in the X-axis direction, and the length in the Y- As shown in FIG. The phosphor layer 170 may be arranged to cover the plurality of semiconductor chips 150.

The phosphor layer 170 absorbs a part of light emitted from the semiconductor chip 150 and converts the wavelength into light having a different wavelength. The phosphor layer 170 may include a phosphor in a light transmitting resin material such as silicon or epoxy. The phosphor may include at least one of a yellow phosphor, a green phosphor, a blue phosphor, and a red phosphor. For example, the phosphor may be a nitride-based phosphor, an oxynitride-based phosphor, or the like, which is mainly activated by a lanthanoid- Alkaline earth metal borate halogen phosphors, alkaline earth metal aluminate phosphors, alkaline earth silicate, alkaline earth metal silicate phosphors, alkaline earth metal silicate phosphors, alkaline earth metal silicate phosphors, alkaline earth metal silicate phosphors, A rare earth aluminate, a rare earth silicate, or a lanthanoid-based element such as Eu which is mainly activated by a lanthanoid element such as Ce or the like, which is mainly activated by a rare earth aluminate, a rare earth aluminate, Organic and organic complexes, and the like. The. As a specific example, the above-mentioned phosphors can be used, but the present invention is not limited thereto.

The phosphor layer 170 may have a thickness T1 different from that of the semiconductor chip 150, as shown in FIG. The phosphor layer 170 may be formed to have a thickness (T1) in the range of 100 탆 or more, for example, 100 탆 to 200 탆. If the phosphor layer 170 is smaller than the above range, the phosphor may not be uniformly distributed, The light extraction efficiency may be lowered. The phosphor layer 170 may have a thickness T1 smaller than the thickness of the semiconductor chip 150 and may be attached on the semiconductor chip 150. [ The phosphor layer 170 may be provided in a film form. The upper surface and the lower surface of the phosphor layer 170 may be provided in a horizontal plane. The phosphor layer 170 may include a single layer or a multi-layer structure.

The light emitted from the phosphor layer 170 and the light emitted from the semiconductor chip 150 may be mixed with white light. The white light may have a color temperature within a color temperature range of, for example, 2000K to 10000K. The white light may have a color temperature of at least one of Warm white, Cool white, or Neutral white.

&Lt; Transparent resin layer 180 >

The translucent resin layer 180 is disposed on the phosphor layer 170. The translucent resin layer 180 may be attached to the upper surface of the phosphor layer 170. The translucent resin layer 180 may be formed of a transparent resin material such as silicon or epoxy. The translucent resin layer 180 may include a fluororesin, and in this case, the moisture-proof property may be improved. The translucent resin layer 180 may be formed of a transparent layer in which an impurity such as a diffusing agent or a fluorescent material is not added. The light transmitting resin layer 180 may transmit light incident through the phosphor layer 170. The translucent resin layer 180 may be made of a material having a refractive index lower than that of the phosphor layer 170 or a material having a refractive index difference of 0.3 or less with respect to the phosphor layer 170. Since the translucent resin layer 180 is disposed of a material lower than the refractive index of the phosphor layer 170, the light incident through the phosphor layer 170 can be transmitted without being reflected. The translucent resin layer 180 may be formed of a transparent resin material in a single layer or in multiple layers.

The light transmitting resin layer 180 may have the same area as the top surface area of the phosphor layer 170 or a small area. When the light transmitting resin layer 180 protrudes outward from the phosphor layer 170, a protruding portion of the light transmitting resin layer 180 may be peeled off. Since the translucent resin layer 180 is disposed on the phosphor layer 170 to prevent a part of the reflective member 130 from covering the upper surface of the phosphor layer 170, The transmission efficiency of the incident light can be improved. Accordingly, compared to the structure in which a medium such as air exists on the phosphor layer 170, the light loss can be reduced and the light extraction efficiency can be improved.

2, the thickness T2 of the translucent resin layer 180 may be smaller than the thickness T1 of the phosphor layer 170 to reduce light loss. The thickness T2 of the translucent resin layer 180 may be in the range of 0.1 to 0.9 times the thickness T1 of the phosphor layer 170 and may be in the range of 10 to 180 mu m, . If the thickness T2 of the light transmitting resin layer 180 is smaller than the above range, the light extraction efficiency is not sufficiently improved and the reflective member 130 may penetrate the upper surface of the light transmitting resin layer 180 having a small thickness If it is larger than the above range, the light extraction efficiency may be lowered.

In the embodiment, the translucent resin layer 180 is disposed on the upper surface of the phosphor layer 170, thereby preventing the reflective member 130 from penetrating into the upper edge surface of the phosphor layer 170. Accordingly, the light flux of the light source module 100 can be improved. As shown in Fig. 19, the embodiment is a graph of the light source module of Fig. 2, and the comparative example is a graph showing the light flux when the light-transmitting resin layer 180 is removed from the light source module of Fig. As can be seen from the luminous fluxes of the embodiment and the comparative example of Fig. 19, the peak wavelength emitted from the semiconductor chip 150 is 2% higher than that of the comparative example. For example, the semiconductor chip 150 emits a blue wavelength, and the phosphor layer 170 emits yellow light.

A reflective member 130 is disposed around a plurality of semiconductor chips 150 and a phosphor layer 170 is attached to the reflective member 130 and the semiconductor chip 150 to form the phosphor layer 170 Can be prevented from being peeled off, and the light incidence efficiency into the phosphor layer 170 can be improved. By attaching the phosphor layer 170 in the form of a film, it is possible to eliminate a problem of chromatic aberration due to the distribution of phosphors and a problem of light emitting deviations due to thickness differences.

6 is a first modification of the light source module of FIG. 2. In the description of FIG. 6, the description of the same configuration as that described above will be referred to the above description. It can be selectively applied to the modified example.

6, the light source module includes a circuit board 110, a semiconductor chip 150, a reflective member 130, a phosphor layer 170, and a translucent resin layer 180.

The translucent resin layer 180 may be disposed on the upper surface of the phosphor layer 170 with a predetermined thickness T2. The transparent resin layer 180 includes an outer protective portion 182 and the outer protective portion 182 may extend to the side surfaces of the phosphor layer 170 and the upper surface of the reflective member 130. The outer frame protecting portion 182 covers a periphery of the front surface of the phosphor layer 170. The outer protective part 182 may be provided in a flat shape. The outer guard part 182 may be disposed at a predetermined width W1 around the outer periphery of the phosphor layer 170, and may be disposed at a width of 100 mu m or more, for example. If the width is less than 100 mu m, the infiltration path of the reflection member 130 is short, and the infiltration blocking effect may be deteriorated. Also, the outer cover protector 182 protects the side surface of the phosphor layer 170 and can extract light through the side surface of the phosphor layer 170. The width W1 > T2 of the outer guard portion 182 can be set.

The side reflective portion 132 of the reflective member 130 may be disposed outside the outer protective portion 182 of the transparent resin layer 180. The side reflective portion 132 is disposed outside the outer protective portion 182 to effectively reflect light leaking laterally of the transparent resin layer 180. The phosphor layers 170 and So that the side reflecting portion 132 of the reflecting member 130 can be spaced apart. The side reflector 132 may be disposed along the outer periphery of the outer guard 182. The side reflecting portion 132 and the outer protecting portion 182 may be spaced apart from the edge of the reflecting member 130.

As another example, the side reflective portion 132 of the reflective member 130 may be disposed between the side surface of the phosphor layer 170 and the outer protective portion 182 of the translucent resin layer 180. The side reflecting portion 132 may reflect the light leaked through the side surface of the phosphor layer 170. The side reflector 132 may improve adhesion between the side surface of the phosphor layer 170 and the outer protective portion 182 of the transparent resin layer 180.

As shown in FIG. 20, the embodiment of FIG. 6 shows that the luminous flux of the blue peak wavelength is 4% higher than that of the comparative example. Here, in the comparative example, the light-transmitting resin layer 180 does not exist on the phosphor layer 170 in the light source module of FIG.

7 is a second modification of the light source module of Fig. 2. In the description of Fig. 7, the same constitution as that described above will be described with reference to the above description, It can be selectively applied to the modified example.

Referring to FIG. 7, the light source module includes a circuit board 110, a semiconductor chip 150, a reflective member 130, a phosphor layer 170, and a transparent resin layer 180.

The light source module may include a light guide layer 140 disposed between the reflective member 130 and the semiconductor chip 150. The light guide layer 140 may be disposed on a side surface of the semiconductor chip 150. The light guide layer 140 may be formed of a transparent resin material such as silicon or epoxy. The optical guide layer 140 may be disposed along the groove 134 having a predetermined depth around the semiconductor chips 150. The depth of the groove 134 may be less than the thickness of the semiconductor chip 150 and the width of the groove 134 may be less than a half of the width of the semiconductor chip 150. The width of the groove 134 may gradually become narrower toward the lower direction or the circuit board direction, but is not limited thereto.

A light guide layer 140 is disposed in the groove 134 and the light guide layer 140 may separate the reflective member 130 from the side surface of the semiconductor chip 150. The light guide layer 140 guides the light emitted to the side of the semiconductor chip 150 or the light reflected by the reflective member 130 disposed outside the light guide layer 140. The light guiding layer 140 may reflect the light traveling in the lateral direction of the semiconductor chip 150 to the reflection member 130 and guide the light in the emission direction. Accordingly, when the reflective member 130 is attached to the surface of the semiconductor chip 150, the light loss at the side surface of the semiconductor chip 150 can be reduced. The optical guide layer 140 may be attached to the side surface of the semiconductor chip before the semiconductor chip 150 is mounted on the semiconductor chip 150. After the semiconductor chip 150 is mounted and the reflective member 130 is formed, The grooves 134 may be formed through the interface between the reflective layer 150 and the reflective member 130, and then the optical guide layer 140 may be disposed. The light guide layer 140 may be disposed between the reflective member 130 and the semiconductor chip 150 to improve the extraction efficiency of the side light in the semiconductor chip 150.

FIG. 8 is a side sectional view showing the light source module according to the second embodiment, and FIG. 9 is a partially enlarged view of FIG. In the description of Fig. 8 and Fig. 9, the description of the same configuration as that described above is referred to the above description, and the configuration and explanation described above can be selectively applied.

8 and 9, the light source module includes a circuit board 110, a semiconductor chip 150, a reflective member 130, a phosphor layer 170, and a light-transmitting resin layer 190 having a light extracting structure .

The light transmitting resin layer 190 may include a light extracting structure. The light transmitting resin layer 190 may include a light extracting structure having an incident portion 191 and protrusions 192 on the incident portion 191. 9, the incident portion 191 may be disposed on the phosphor layer 170 with a predetermined thickness D3 to connect the protrusions 192 to each other. The incident portion 191 may be disposed in a range of a thickness D3 of 70 μm or less, for example, 30 μm to 70 μm to reduce reflection loss and improve transmission efficiency. The incident light from the incident portion 191 can be extracted to the outside through the light extracting structure by changing the critical angle of the light. The light extracting structure may include a plurality of protrusions 192, and the plurality of protrusions 192 may be spaced apart from each other. Each of the protrusions 192 may include at least one of a horn shape, a polygonal pyramid shape, a conical shape, a polygonal pyramid shape, a frustum shape, a hemispherical shape, and an aspherical shape. The plurality of protrusions 192 may be arranged in a matrix form, or a plurality of rows or columns may be arranged in a zigzag form. The area between the projections 192 may have a gradually narrower width toward the incidence portion 191. [

9, the period D1 of the protrusion 192 may be n times the interval D5 between the protrusions 192, and n is a real number satisfying the relation 1 <n <3. The period D1 of the protrusion 192 may be m times the thickness of the incident portion 191, and m is a real number satisfying the relationship of 5? M? 7. The height D4 of the protrusion 192 may range from 0.5 to 1.5 times the period D1 between the protrusions 192. [ The height D4 of the protrusion 192 may be greater than the thickness of the incident portion 191. [ The light-transmitting resin layer 190 having the light extracting structure can improve light extraction efficiency through the phosphor layer 170. Since the light transmitting resin layer 190 is disposed with the incident portion 191, the side reflection portion 132 of the reflection member 130 can be prevented from penetrating the upper surface of the phosphor layer 170. The period D1 may range from 2.5 [mu] m to 3 [mu] m.

The side reflective portion 132 of the reflective member 130 may be disposed on a side surface of the phosphor layer 170 to reflect light leaking laterally of the phosphor layer 170. The side reflecting portion 132 of the reflecting member 130 may be in contact with the side surface of the incident portion 191, but the present invention is not limited thereto.

FIG. 10 is another example of the light extracting structure of FIG. 9, in which the light extracting structure may be arranged in a jig as shown in FIG. Since the protrusion 192 of the light extracting structure is provided as a curved surface, the incident light can be refracted. Further, since the light extracting structure is provided in a hemispherical shape, the height of the protrusion 192 can be lowered and the gap between the protrusions 192 can be further narrowed. Accordingly, the amount of light traveling to the protrusions 192 can be increased. The height D4 of the protrusion 192 may be in the range of 1 탆 to 2 탆 and may be smaller than the period D1 between the protrusions 192. Such hemispherical lens-shaped protrusions 192 can enlarge the floor area and improve the incident light quantity and extraction efficiency. The light extracting structure may be provided in the form of a micro lens array. The protrusions 192 may be arranged in the form of a hexagonal close-packed grating or a face-centered cubic grating.

As shown in FIG. 21, the luminous flux of the light source module according to the second embodiment is increased by 2% or more as compared with the comparative example. The comparative example is a structure in which light is extracted through the phosphor layer 170 without the light-transmitting resin layer 190 having a light extracting structure.

11 is a first modification of the light source module of Fig. In the description of FIG. 11, the description of the same configuration as that described above is referred to the above description, and the configuration and explanation disclosed above can be selectively applied.

11, the light source module includes a circuit board 110, a semiconductor chip 150, a reflective member 130, a phosphor layer 170, and a light-transmitting resin layer 190 having a light extracting structure.

The translucent resin layer 190 includes an outer protective portion 193. The outer guard 193 is disposed along the outer circumference of the protrusion 192, which is the light extracting structure, and may be formed in a ring shape or a frame shape. The outer guard part 193 is disposed in the edge area of the phosphor layer 170 to serve as a dam. The outer guard part 193 protects the upper edge area of the phosphor layer 170 from the reflective member 130. The outer guard part 193 may have a polygonal shape such as a triangular shape, a quadrangular shape, or a trapezoid. The area of the side end face of the outer guard part 193 may be larger than the area of the side end face of each of the projecting parts 192. [ The side reflective portion 132 of the reflective member 130 may be in contact with the outer protective portion 193 of the transparent resin layer 190 and is not limited thereto.

12 is a second modification of the light source module of Fig. In the description of FIG. 12, description of the same configuration as that described above is referred to the above description, and the configuration and explanation disclosed above can be selectively applied.

12, the light source module includes a circuit board 110, a semiconductor chip 150, a reflective member 130, a phosphor layer 170, and a light-transmitting resin layer 190 having a light extracting structure.

A light guide layer 140 may be disposed between the reflective member 130 and the semiconductor chip 150. The light guide layer 140 may be in contact with the side surface of the semiconductor chip 150 and the lower surface of the phosphor layer 170. The light guide layer 140 guides the light traveling through the side surface of the semiconductor chip 150 and reflects the light through the reflection member 130. The light guide layer 140 may be formed of a material such as silicon or epoxy. The light guide layer 140 may be disposed on one side of the semiconductor chip 150, on opposite sides of the semiconductor chip 150, or on all sides of the semiconductor chip 150 to improve light extraction efficiency in a lateral direction from the semiconductor chip 150 .

13 is a third modification of the light source module of Fig. In the description of FIG. 13, the description of the same configuration as that described above is referred to the above description, and the configuration and explanation disclosed above can be selectively applied.

13, the light source module includes a circuit board 110, a semiconductor chip 150, a reflective member 130, a phosphor layer 170, and a light-transmitting resin layer 190 having a light extracting structure.

The protrusion 192 of the light extracting structure includes a first area A1 overlapping the semiconductor chip 150 and a second area A2 overlapping the reflection member 130, The height or size of the protrusion 192 disposed on the first area A1 may be greater than the height or size of the protrusion 192 disposed on the second area A2. The protrusion 192 of the first area A1 disposed on the semiconductor chip 150 is arranged at a larger size so that the first area A1 on the semiconductor chip 150 and the first area A1 on the semiconductor chip 150 The light intensity deviation between the second regions A2 can be reduced. The height of the protrusion 192 of the second area A2 may be 0.3 to 0.7 times the height of the protrusion 192 of the first area A1.

14 is a fourth modification of the light source module of Fig. In the description of FIG. 14, the description of the same configuration as that described above is referred to the above description, and the configuration and explanation disclosed above can be selectively applied.

14, the light source module includes a circuit board 110, a semiconductor chip 150, a reflective member 130, a phosphor layer 170, and a light-transmitting resin layer 190 having a light extracting structure.

The outer protective portion 193A of the translucent resin layer 190 may be disposed outside the side surface of the phosphor layer 170. The outer guard part 193A may extend to the side surface of the phosphor layer 170 and the upper surface of the reflective member 130. The outer protective portion 193A of the translucent resin layer 190 may be disposed in a region not overlapping the phosphor layer 170 and may be in contact with the upper surface of the reflective member 130. [ The outer guard part 193A may be attached to a side surface of the phosphor layer 170 to prevent a part of the reflective member 130 from penetrating the upper surface of the phosphor layer 170. [ The side reflective portion 132 of the reflective member 130 is disposed outside the outer protective portion 193A of the translucent resin layer 190 and may be spaced apart from the phosphor layer 170. [ The side reflective portion 132 of the reflective member 130 may be disposed between the outer protective portion 193A of the translucent resin layer 190 and the side surface of the phosphor layer 170, And can be tightly coupled to the phosphor layer 170 and the outer protective portion 193A. Here, the side reflective portion 132 of the reflective member 130 may be disposed on the outer periphery of the phosphor layer 170 or on the outer periphery of the outer guard portion 193A.

As shown in FIG. 22, the luminous flux of the light source module of FIG. 14 is improved by 4% or more as compared with the comparative example. The comparative example is a structure in which the light source module extracts light through the phosphor layer 170 without the light transmitting resin layer 190 having the light extracting structure. The light source module of Fig. 14 further includes an outer protective portion 193A of the light transmitting resin layer 190 as compared with the light source module of Fig. 12, and the outer protective portion 193A of the light source module of Fig. The light extraction in the lateral direction can be improved.

15 is a fourth modification of the light source module of Fig. In the description of FIG. 15, the description of the same configuration as that described above is referred to the above description, and the configuration and explanation disclosed above can be selectively applied.

15, the light source module includes a circuit board 110, a semiconductor chip 150, a reflective member 130, a phosphor layer 170, and a light-transmitting resin layer 190 having a light extracting structure.

The light extracting structure of the light transmitting resin layer 190 may expose the phosphor layer 170 to a region between the plurality of protruding portions 192. In the light extracting structure, the protrusions 192 may be spaced apart from each other, or the bottoms of the protrusions 192 may be in contact with each other. The light extracting structure may improve the light extraction efficiency by opening the area between the projections 192 or by increasing the density of the projections 192.

16 shows another embodiment of the light source module in which the semiconductor chip 150 is arranged in a circular region having a predetermined diameter on a circuit board 110 and a phosphor layer and a transparent resin layer 190 are formed on the circular region, Can be arranged in a circular shape. A reflective member 130 may be disposed on the circuit board 110 to reflect light. In this case, the number or density of the semiconductor chips 150 can be increased. The shape of the outline in which the semiconductor chips 150 are arranged may be a rectangular shape or a square shape in which the circular shape of the semiconductor chip 150 is not limited thereto.

17 is an example of a lighting apparatus having a light source module according to an embodiment. In describing the above illumination device, the same parts as the configuration (s) described above can be selectively applied. The lighting device may be a backlight unit applied to a flat panel display, an interior lamp used in an indoor environment, or a headlamp, a fog lamp, a retractor, a car light, a numeral, a tail lamp, a brake light, a turn indicator, , Indoor lighting installed in a car, and the like.

17, the illumination device includes an illumination module 200 having the light source modules 100A, 100B, and 100C disclosed in the embodiment, and an inner lens 215 for controlling the brightness of light emitted from the illumination module 110 An optical control module 220 for diffracting the light emitted from the inner lens 215 to control the shape of the light, and a light control module 220 for diffusing the light emitted from the optical control module 220 to realize an optical image And an outer lens 230.

The light source modules 100A, 100B, and 100C of the illumination module 200 are the light source modules described above, and one or a plurality of light source modules may be disposed, and red, green, red, or white light may be emitted. The plurality of light source modules 100A, 100B, and 100C may be individually driven or simultaneously driven, so that the light intensity or the amount of light can be controlled.

The inner lens 215 may diffuse or condense incident light. The light control module 220 is spaced apart from the inner lens 215 by a predetermined distance D and has a pattern for controlling the shape of light at positions corresponding to the light source modules 100A, 100B, and 100C can do. The pattern may be a transparent patterned substrate, a transparent film, or a pattern that implements various optical images on a transparent sheet or implements a random pattern. For example, DOE (Diffractive optical elements) or HOE (Holographic optical elements) Can be applied.

The outer lens 230 may diffuse or condense the incident light to emit an optical image. Such a light image can be applied to a vehicle lamp when using a predetermined signal transmission, for example, a light source having a strong line, or a signal image such as a sudden stop, an alarm signal, or a progressive path signal.

18 is an example of a semiconductor chip according to the embodiment.

18, the semiconductor chip includes a light emitting structure 10 having a plurality of semiconductor layers 11, 12 and 13, a first electrode layer 20 under the light emitting structure 10, a first electrode layer 20, An insulating layer 41 and a plurality of first electrodes 25 and 25A may be provided between the first electrode layer 20 and the second electrode layer 50. The second electrode layer 50 may include an insulating layer 41 and a plurality of first electrodes 25 and 25A.

The light emitting structure 10 may include a first semiconductor layer 11, an active layer 12, and a second semiconductor layer 13. The active layer 12 may be disposed between the first semiconductor layer 11 and the second semiconductor layer 13. The active layer 12 may be disposed under the first semiconductor layer 11 and the second semiconductor layer 13 may be disposed under the active layer 12. [

For example, the first semiconductor layer 11 may include an n-type semiconductor layer doped with a first conductive dopant such as an n-type dopant, and the second semiconductor layer 13 may include a second conductive dopant such as p And a p-type semiconductor layer to which a dopant is added. Conversely, the first semiconductor layer 11 may be formed of a p-type semiconductor layer, and the second semiconductor layer 13 may be formed of an n-type semiconductor layer.

The upper surface of the first semiconductor layer 11 may be formed of a rough irregular portion 11A and the irregular surface 11A may improve the light extraction efficiency. The side end surface of the uneven surface 11A may include a polygonal shape or a hemispherical shape.

The first electrode layer 20 is disposed between the light emitting structure 10 and the second electrode layer 50 and is electrically connected to the second semiconductor layer 13 of the light emitting structure 10, (50). The first electrode layer 20 includes a first contact layer 15, a reflective layer 17 and a capping layer 19, and the first contact layer 15 is formed between the reflective layer 17 and the second semiconductor layer 13), and the reflective layer (17) is disposed between the first contact layer (15) and the capping layer (19). The first contact layer 15, the reflective layer 17, and the capping layer 19 may be formed of different conductive materials, but the present invention is not limited thereto.

The first contact layer 15 is in contact with the second semiconductor layer 13 and may form an ohmic contact with the second semiconductor layer 13, for example. The first contact layer 15 may be formed of, for example, a conductive oxide film, a conductive nitride, or a metal. The first contact layer 15 may be formed of, for example, indium tin oxide (ITO), ITO (indium tin oxide), IZO (indium zinc oxide), IZON (indium zinc nitride), AZO (aluminum zinc oxide) ), IZTO (Indium Zinc Tin Oxide), IZO (Indium Aluminum Zinc Oxide), IGZO (Indium Gallium Zinc Oxide), IGTO (Indium Gallium Tin Oxide), ATO (Antimony Tin Oxide) IZO nitride, ZnO, IrOx, RuOx, NiO, Pt, Ag, and Ti.

The reflective layer 17 may be electrically connected to the first contact layer 15 and the capping layer 19. The reflection layer 17 may reflect light incident from the light emitting structure 10 and increase the amount of light extracted to the outside.

The reflective layer 17 may be formed of a metal having a light reflectance of 70% or more. For example, the reflective layer 17 may be formed of a metal or an alloy including at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Cu, Au and Hf. The reflective layer 17 may be formed of one of indium-tin-oxide (ITO), indium-zinc-oxide (IZO), indium-zinc-tin- oxide (IZTO) A transparent conductive material such as indium-gallium-oxide (IGZO), indium-gallium-zinc-oxide (IGTO), aluminum-zinc oxide And may be formed in multiple layers. For example, in an embodiment, the reflective layer 17 may include at least one of Ag, Al, Ag-Pd-Cu alloy, or Ag-Cu alloy. For example, the reflective layer 17 may include an Ag layer and an Ni layer alternately or may include a Ni / Ag / Ni layer, a Ti layer, and a Pt layer. As another example, the first contact layer 15 may be formed under the reflective layer 17, and at least a part of the first contact layer 15 may be in contact with the second semiconductor layer 13 through the reflective layer 17. As another example, the reflective layer 17 may be disposed under the first contact layer 15, and a portion may contact the second semiconductor layer 13 through the first contact layer 15 .

The semiconductor chip according to the embodiment may include a capping layer 19 disposed under the reflective layer 17. The capping layer 19 is in contact with the lower surface of the reflective layer 17 and the contact portions 34 and 34A are coupled with the first electrodes 25 and 25A, As shown in Fig. The capping layer 19 may include at least one of Au, Cu, Ni, Ti, Ti, W, Cr, W, Pt, V, Fe and Mo.

The plurality of first electrodes 25 and 25A may include pads and may be disposed outside the light emitting structure 10. As another example, a plurality of second electrodes may be disposed on the outer side of the light emitting structure 10 or on the upper side of the light emitting structure 10.

The contact portions 34 and 34A of the capping layer 19 are disposed in regions that do not overlap with the light emitting structure 10 in the vertical direction and are vertically overlapped with the first electrodes 25 and 25A. The contact portions 34 and 34A of the capping layer 19 are disposed in regions that do not overlap with the first contact layer 15 and the reflective layer 17 in the vertical direction. The contact portions 34 and 34A of the capping layer 19 are disposed at a lower position than the light emitting structure 10 and may be in direct contact with the first electrodes 25 and 25A.

The first electrodes 25 and 25A may be formed as a single layer or a multilayer, and the monolayer may be Au, and in the case of a multilayer, at least two of Ti, Ag, Cu, and Au may be included. Here, the multilayer structure may be a Ti / Ag / Cu / Au laminate structure or a Ti / Cu / Au laminate structure. May be in direct contact with the first electrode (25, 25A) of the reflective layer (17) and the first contact layer (15), but is not limited thereto.

The first electrodes 25 and 25A may be disposed in a region between the outer wall of the first electrode layer 20 and the light emitting structure 10. The protective layer 30 and the light-transmitting layer 45 may be in contact with the periphery of the first electrodes 25 and 25A.

The protective layer 30 is disposed on the lower surface of the light emitting structure 10 and may be in contact with the lower surface of the second semiconductor layer 13 and the first contact layer 15, .

The inner portion of the passivation layer 30, which overlaps with the light emitting structure 10 in the vertical direction, may be vertically overlapped with the region of the protrusion 16. The outer side of the protective layer 30 extends over the contact portions 34 and 34A of the capping layer 19 and overlaps with the contact portions 34 and 34A in the vertical direction. The outer side of the protection layer 30 may be in contact with the first electrodes 25 and 25A and may be disposed on the peripheral surfaces of the first electrodes 25 and 25A, for example.

The inner side of the passivation layer 30 is disposed between the light emitting structure 10 and the first electrode layer 20 and the outer side of the passivation layer 30 is disposed between the light emitting layer 45 and the contact portions 34 and 34A of the capping layer 19. [ As shown in FIG. The outer side of the protective layer 30 may extend outside the sidewall of the light emitting structure 10 to prevent moisture from penetrating.

The protective layer 30 may be defined as a channel layer, a low refractive index material, or a channel layer. The protective layer 30 may be formed of an insulating material, for example, an oxide or a nitride. For example, the protective layer 30 may include at least one of SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , May be selected and formed. The protective layer 30 may be formed of a transparent material.

The semiconductor chip according to the embodiment may include an insulating layer 41 for electrically insulating the first electrode layer 20 and the second electrode layer 50. The insulating layer 41 may be disposed between the first electrode layer 20 and the second electrode layer 50. The upper portion of the insulating layer 41 may be in contact with the protective layer 30. The insulating layer 41 may be formed of, for example, an oxide or a nitride. For example, the insulating layer 41 may include at least one of the group consisting of SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , May be selected and formed.

The insulating layer 41 may be formed to a thickness of 100 nm to 2000 nm, for example. If the thickness of the insulating layer 41 is less than 100 nm, a problem may be caused in the insulating characteristic. If the thickness of the insulating layer 41 is more than 2000 nm, have. The insulating layer 41 is in contact with the lower surface of the first electrode layer 20 and the upper surface of the second electrode layer 50 and the protective layer 30, the capping layer 19, the contact layer 15, (17).

The second electrode layer 50 may include a diffusion barrier layer 52 disposed below the insulating layer 41, a bonding layer 54 disposed below the diffusion barrier layer 52, And may include a conductive support member 56 and may be electrically connected to the first semiconductor layer 11. The second electrode layer 50 may selectively include one or two of the diffusion preventing layer 52, the bonding layer 54, and the conductive supporting member 56, and the diffusion preventing layer 52 or At least one of the bonding layers 54 may not be formed.

The diffusion preventing layer 52 may include at least one of Cu, Ni, Ti, Ti-W, Cr, W, Pt, V, Fe and Mo. The diffusion barrier layer 52 may function as a diffusion barrier layer between the insulating layer 41 and the bonding layer 54. The diffusion barrier layer 52 may be electrically connected to the bonding layer 54 and the conductive support member 56 and may be electrically connected to the first semiconductor layer 11.

The diffusion preventing layer 52 may prevent diffusion of the material contained in the bonding layer 54 toward the reflective layer 17 in the process of providing the bonding layer 54. The diffusion preventing layer 52 may prevent a substance such as tin contained in the bonding layer 54 from affecting the reflective layer 17.

The bonding layer 54 may include at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd, . The conductive support member 56 supports the light emitting structure 10 according to the embodiment and can perform a heat dissipation function. The bonding layer 54 may include a seed layer.

The conductive support member 56 may be formed of a metal or a carrier substrate, for example, a semiconductor substrate (e.g., Si, Ge) doped with Ti, Cr, Ni, Al, Pt, Au, W, Cu, Mo, , GaN, GaAs, ZnO, SiC, SiGe, and the like). The conductive supporting member 56 is a layer for supporting the light emitting device 100. The thickness of the conductive supporting member 56 may be 80% or more of the thickness of the second electrode layer 50 and 30 mu m or more.

On the other hand, the second contact layer 33 is disposed inside the first semiconductor layer 11 and is in contact with the first semiconductor layer 11. The upper surface of the second contact layer 33 may be disposed above the lower surface of the first semiconductor layer 11 and may be electrically connected to the first semiconductor layer 11, Is insulated from the layer (13).

 The second contact layer 33 may be electrically connected to the second electrode layer 50. The second contact layer 33 may be disposed through the first electrode layer 20, the active layer 12, and the second semiconductor layer 15. The second contact layer 33 is disposed in a recess 2 disposed in the light emitting structure 10 and the active layer 12 and the second semiconductor layer 15 and the protective layer 30 Lt; / RTI &gt; A plurality of the second contact layers 33 may be disposed apart from each other.

The second contact layer 33 may be connected to the protrusion 51 of the second electrode layer 50 and the protrusion 51 may protrude from the diffusion prevention layer 52. The protrusion 51 penetrates through the hole 41A disposed in the insulating layer 41 and the protection layer 30 and can be insulated from the first electrode layer 20. [

The second contact layer 33 may include at least one of Cr, V, W, Ti, Zn, Ni, Cu, Al, Au and Mo. As another example, the protrusion 501 may include at least one of the diffusion preventing layer 52 and the bonding layer 54, but is not limited thereto. For example, the protrusions 51 may include at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Ag, Nb, Pd or Ta.

The first electrodes 25 and 25A are electrically connected to the first electrode layer 20 and may be exposed to a region outside the sidewalls of the light emitting structure 10. [ The first electrodes 25 and 25A may be arranged in a plurality. The first electrodes 25 and 25A may include at least one of Cu, Ni, Ti, Ti, W, Cr, W, Pt, V, Fe and Mo.

The light transmitting layer 45 may protect the surface of the light emitting structure 10 and may isolate the first electrode 25 and the light emitting structure 10 from each other, / RTI &gt; The light-transmitting layer 45 has a lower refractive index than the material of the semiconductor layer constituting the light-emitting structure 10, and can improve light extraction efficiency. The light-transmitting layer 45 may be formed of, for example, an oxide or a nitride. For example, the light-transmitting layer 45 may include at least one of the group consisting of SiO ₂ , Si _x O _y , Si ₃ N ₄ , Si _x N _y , SiO _x N _y , Al ₂ O ₃ , TiO ₂ , May be selected and formed. Meanwhile, the light-transmitting layer 45 may be omitted according to design. According to the embodiment, the light emitting structure 10 may be driven by the first electrode layer 20 and the second electrode layer 50.

The vehicle lighting unit according to the present invention can be applied to a tail & stop signal and a turn signal signal. That is, the present invention can be applied to various lamp devices requiring illumination, such as automobile lamps, home lighting devices, and industrial lighting devices. For example, when it is applied to a vehicle lamp, it can be applied to a headlight, a vehicle interior light, a door scarf, a rear light, and the like. In addition, the illumination device of the present invention can be applied to a backlight unit field applied to a liquid crystal display device, and can be applied to all lighting-related fields that are currently developed, commercialized, or can be implemented according to future technology development.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects and the like illustrated in the embodiments can be combined and modified by other persons skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of illustration, It can be seen that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

110: circuit board
130: reflective member
132:
150: semiconductor chip
170: Fluorescent film
180, 190: translucent resin layer
191: Incident Department
192: Light extraction structure
193: Outer guard

Claims (10)

A circuit board;
A plurality of semiconductor chips disposed on the circuit board;
A reflective member disposed around the plurality of semiconductor chips;
A plurality of semiconductor chips and a phosphor layer disposed on the reflective member; And
And a translucent resin layer disposed on the phosphor layer. The light source module according to claim 1, wherein the reflective member has an area larger than a bottom area of the phosphor layer on the circuit board, and includes a resin material. The light source module according to claim 1, wherein the reflective member includes a side reflector disposed on a side surface of the phosphor layer. The light source module according to any one of claims 1 to 3, wherein the light transmitting resin layer includes a light extracting structure having an incident portion disposed on the phosphor layer and a plurality of protrusions on the incident portion. 4. The method according to any one of claims 1 to 3,
Wherein the translucent resin layer comprises a resin material having a refractive index lower than that of the phosphor layer,
And the lower surface of the translucent resin layer has an area equal to or larger than an upper surface area of the phosphor layer. 5. The light source module according to claim 4, wherein the light transmitting resin layer includes an outer protective portion disposed on an outer periphery of the light extracting structure. The light source module according to claim 6, wherein the outer guard is disposed on at least one of an upper surface of the phosphor layer and an upper surface of the reflective member, and has a different shape from the protrusions. The light source module according to any one of claims 1 to 3, comprising a light guide layer of a transparent resin material disposed between the reflective member and the semiconductor chip. 4. The method according to any one of claims 1 to 3,
A first opening disposed on the translucent resin layer and the phosphor layer disposed on the semiconductor chip, and a second opening on the reflective member,
Wherein the circuit board has a first lead electrode below the semiconductor chips and a second lead electrode below the second opening,
Wherein the plurality of semiconductor chips are electrically connected to the first and second lead electrodes. At least one light source module;
An inner lens on the light source module; And
An outer lens on the inner lens,
The light source module includes:
A circuit board;
A plurality of semiconductor chips disposed on the circuit board;
A reflective member disposed around the plurality of semiconductor chips;
A plurality of semiconductor chips and a phosphor layer disposed on the reflective member; And
And a translucent resin layer disposed on the phosphor layer.

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