JPS6445132A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6445132A JPS6445132A JP20215187A JP20215187A JPS6445132A JP S6445132 A JPS6445132 A JP S6445132A JP 20215187 A JP20215187 A JP 20215187A JP 20215187 A JP20215187 A JP 20215187A JP S6445132 A JPS6445132 A JP S6445132A
- Authority
- JP
- Japan
- Prior art keywords
- sinxoy
- sio2
- film
- sin
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To prevent stress migration of wiring, by composing final protective films of three layers of SiN, SiNxOy and SiO2. CONSTITUTION:A final Al wiring 2 is formed on a substrate 1. As final protective films, SiO2 (PSG) film 3, in which SiO2 or phosphorus is doped, an SiNxOy film 4, and an SiN film 5 are formed on the Al wiring 2. The films of SiO2, SiNxOy and SiN can be formed at low temperature by using a CVD method, a plasma CVD method and a photo CVD method. The component of the SiNxOy film 4 can be changed by controlling the flow rates of O2 and N2 as follows: on the SiO2, as SiNxOy (x 0, y 2); beneath the SiN film, as SiNxOy (x 4/3, y 0); and (x) and (y) (SiNxOy) are continuously changed from SiO2 to Si3N4. Thus excellent moisture resistance and contamination resistance are obtained, and stress migration is prevented.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20215187A JPS6445132A (en) | 1987-08-13 | 1987-08-13 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20215187A JPS6445132A (en) | 1987-08-13 | 1987-08-13 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6445132A true JPS6445132A (en) | 1989-02-17 |
Family
ID=16452807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20215187A Pending JPS6445132A (en) | 1987-08-13 | 1987-08-13 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6445132A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5851603A (en) * | 1997-07-14 | 1998-12-22 | Vanguard International Semiconductor Corporation | Method for making a plasma-enhanced chemical vapor deposited SiO2 Si3 N4 multilayer passivation layer for semiconductor applications |
| CN100380704C (en) * | 2003-10-29 | 2008-04-09 | 铼宝科技股份有限公司 | Organic light-emitting display panel |
| CN100466328C (en) * | 2003-10-29 | 2009-03-04 | 铼宝科技股份有限公司 | Organic light-emitting display panel |
-
1987
- 1987-08-13 JP JP20215187A patent/JPS6445132A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5851603A (en) * | 1997-07-14 | 1998-12-22 | Vanguard International Semiconductor Corporation | Method for making a plasma-enhanced chemical vapor deposited SiO2 Si3 N4 multilayer passivation layer for semiconductor applications |
| CN100380704C (en) * | 2003-10-29 | 2008-04-09 | 铼宝科技股份有限公司 | Organic light-emitting display panel |
| CN100466328C (en) * | 2003-10-29 | 2009-03-04 | 铼宝科技股份有限公司 | Organic light-emitting display panel |
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