[go: up one dir, main page]
More Web Proxy on the site http://driver.im/

JPS6445133A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6445133A
JPS6445133A JP20215287A JP20215287A JPS6445133A JP S6445133 A JPS6445133 A JP S6445133A JP 20215287 A JP20215287 A JP 20215287A JP 20215287 A JP20215287 A JP 20215287A JP S6445133 A JPS6445133 A JP S6445133A
Authority
JP
Japan
Prior art keywords
sinxoy
layer
wiring
film
si3n4
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20215287A
Other languages
Japanese (ja)
Inventor
Juri Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP20215287A priority Critical patent/JPS6445133A/en
Publication of JPS6445133A publication Critical patent/JPS6445133A/en
Pending legal-status Critical Current

Links

Landscapes

  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To obtain excellent moisture resistance and to prevent the occurrence of stress migration of wiring, by constituting final protective films with a double-layer structure of an Si3N4 film and SiNxOy film. CONSTITUTION:An uppermost Al wiring layer 2 is formed on a substrate 1. An SiNxOy layer 3 is formed on the Al wiring 2 by a plasma CVD method and a photo CVD method. An Si3N4 film 4 is formed as an uppermost layer similarly by the plasma and photo CVD methods. Namely the alleviation of internal stress at the interface between the layer 3 and the film 4 can be achieved by controlling the component ratio of the SiNxOy (x 4/3, y 0) in a region in contact with the Si3N4 and the component ratio of the SiNxOy (x, y) in a region in contact with the Al wiring 2. Thus, excellent moisture resistance is obtained, and the occurrence of stress migration is prevented.
JP20215287A 1987-08-13 1987-08-13 Semiconductor device Pending JPS6445133A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20215287A JPS6445133A (en) 1987-08-13 1987-08-13 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20215287A JPS6445133A (en) 1987-08-13 1987-08-13 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6445133A true JPS6445133A (en) 1989-02-17

Family

ID=16452824

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20215287A Pending JPS6445133A (en) 1987-08-13 1987-08-13 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6445133A (en)

Similar Documents

Publication Publication Date Title
JPS5459080A (en) Semiconductor device
JPS6445133A (en) Semiconductor device
JPS57183052A (en) Semiconductor
JPS56115557A (en) Manufacture of semiconductor device
JPS5766673A (en) Manufacture of mos type semiconductor device
JPS5513904A (en) Semiconductor device and its manufacturing method
JPS6445132A (en) Semiconductor device
JPS6447055A (en) Manufacture of semiconductor device
JPS647550A (en) Semiconductor device
JPS5624939A (en) Manufacture of semiconductor device
JPS57202785A (en) Semiconductor device
JPS5346272A (en) Impurity diffusion method
JPS56138946A (en) Semiconductor device
JPS57128054A (en) Semiconductor device
JPS5615052A (en) Semiconductor device with multilayer wiring
JPS54101282A (en) Two layer rolysilicon semiconductor device
JPS5687346A (en) Manufacture of semiconductor device
JPS6484735A (en) Manufacture of semiconductor device
JPS55110056A (en) Semiconductor device
JPS5658248A (en) Production of semiconductor device
JPS57210659A (en) Semiconductor device
JPS57160156A (en) Semiconductor device
JPS52151567A (en) Protecting method of wiring layers
JPS5793574A (en) Manufacture of mis type semiconductor device
JPS57159035A (en) Manufacture of semiconductor device