JPS58197873A - Manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To prevent defects in laminated layers yielded in a poly Si oxidation process and to improve reliability of a semiconductor device, by exposing Si only in a region (walled emitter region) where poly Si is made to remain in the future before poly Si is deposited, and forming an oxide film on the other Si surface. CONSTITUTION:An N type epitaxial layer 3 is grown through an N<+> type embedded layer 2 on a P type Si substrate 1. An isolation oxide film 4 is formed down to the depth reaching the N<+> embedded layer 2. Photoetching is performed on the surface of a region I of the epitaxial layer surrounded by the oxide film layer 4. An N<+> diffused layer 5 is formed so as to reach the embedded layer 2. The poly Si film on the region I , wherein an Si3N4 film mask is not formed, is oxidized, and a poly Si oxide film 9 is formed. The side of the region I is covered by a mask. A P-base layer 10 is formed in the epitaxial layer in a region II through the poly Si film by boron ion implantation. Impurities for a Schottky barrier diode are introduced in the side of a surrounding region. Ion implantation is performed for forming an N<+> emitter 11 on the surface of the base layer in the region II. Hot etching is performed on the side of the region I .

Description

Detailed Description of the Invention This invention #4 Butterfly, Poly & I (polycrystalline silicone process) In the manufacturing method of the cow stopper device, the noise prevention of stacking faults in poly 81 oxidation process -r There is something about mosquito techniques.

Semiconductor memory antistatic, -J 6K P ROM
(Pr-Ogramable Read ONLY
Memory) %'El remains 11Cν, polyS
L' (using walled emitter forgery r).

In this walled emitter formation process, poly 5iifi is applied only to the memory cell, +) a (M1 side s) O hole J
41il
I'm doing kili2MJ. It has been found that stacking faults occur on the surface of the base material in the peripheral areas where the IJB 12 pattern has been formed and etched. 〜Niko peripheral area i11
In the area Vc, the second round layer [Using the Schottky barrier diode formation, b4IwI has a defect (--causing a decrease in the step W9 of the entire memory device).

This trade is 1I111ν when oxidized with BoIJ B 1-Rhinoceros
Experiments have shown that increasing 1'lJ'lk during oxidation promotes the growth of stacking faults.

The purpose of this invention is to prevent stacking faults that occur in the poly 81 oxidation process in the Fi, poly S1 wall emitter process, and thereby improve the graininess of the raw material.

As shown in a 16KFROM (poly S1 wall emitter process) which can be applied to t';cm in one preferred embodiment of the present invention, polyS
Poly B 1 T-Shomai Arrogance-PJI Castle (Walled Emitter Chain Acid) v) Mi 81 busy edition, other T)
An oxide film is formed on sirkJ, and in the process of Europeanizing poly 81, Europeanization 1. ．． t, J310 * Kabo IJ 8
Stress t-h from poly 81 to 5IItl during 1 oxidation
It serves as a buffer to prevent stacking defects from occurring.

The present invention will be described in detail below along with examples of implementation.

Figure 1-) ~ (f) is a 16KFROM bus o* in the present invention.
This figure shows a construction phase diagram of a field that is commonly used in this field. In the same figure V, I
indicates the area (or collector), and H indicates the area that should become the memory space.

(uJp type 81 units & (8UB) M”*embedded 1 so 2 on l
Growth of N epitaxial pigeon 3 through St < th + isolation melting by oxidation @ (810
, ) 4t-M+ form to a depth that fits the embedment 2. This oxidation is applied to the next epitaxial layer IIM I
& Blood oxidation story R photo-etched and selectively circulated into the donor impurity of the ring M Expansion layer (ON) 5'! It is formed so as to cover the entire nukakomi layer 2.

(b) Responsible for territory *m<m (:voom) oxidation -(s
to, )6y is formed, and on the other hand, on the surface of The1, an epitaxial layer 31m1 is exposed and a region 1.1lfillIVC is formed.
Poly 81% 71 Deposit.

(C) 'WIIRif Kinen VC-drunk* kamasuktoshite81sNa Ill! brShadow formation.

(d) Area 1 where the above 811 end mask is not formed
The above poly 81gkllk is made into poly S1 detailed and edition 9.

(8) After removing with an etchant such as 81sNalllk hot phosphorus, remove with a etchant such as 81sNalllk heat phosphorus, etc. Note that the above-mentioned removed Kaede 6 and Bo IJ8L@7 are not removed at this time.

(After this, the epitaxial layer in the region 1 is removed using a mask, and a t-space layer 10 is formed by implanting boron ions through the epitaxial layer in the region 10, and the peripheral region 1IllK shot barrier diode (not shown) is formed by implanting boron ions. Must-have for
': & Impurity 1! FIm-Specialized, Printed Base MI Table+
kuc) Ion implantation for i+ construction for ivy 11 cedar formation
Then, the area l- is photoetched using an oxidation process of 6t. Finally, there is a person 9.111j11 for the remuneration minister! A collector electrode is formed on the ON layer 5 of ll1l by 1*mul vaporization, and the region 11 is
In step 1i, an emitter electrode is formed using a polyethylene 81 layer and vaporized. The experiment was carried out according to the process specifications of the actual J11tH above. Then 11C directly Bo IJ
81 K debo, this is a fly turned into a friend, and the base 4ij people face! ! ! ! It has been determined that stacking faults as shown in Table 1 occur.

In this experimental process specification, after the completion of 0M diffusion, oxidation-6
Then, a polygon 817r is directly deposited on the substrate 5.

With this foreshadowing, when Bo 1J817 becomes enemy 7, poly 81 deposit reef thickness 2QOnIn, when fi becomes t & 170 minutes (100L) ℃
, weto, ) and below, no stacking faults were observed, and poly81
Debo-Liao 25t) nm, conversion time 110 minutes, and poly 8
1 debo a 11 liao 350 nsn, half average 2.5 μm for 1 & 1240 min during hydrogenation.

3.5 μm 9 inch floor stacking defect cam was discovered by a friend. Second evil (
IL) (Kiri<Q), its product increase Hisashi wkt voice. In order to eliminate the cause of stacking faults and their relationship with process sweating, a #11 debossing layer of g□nm was applied to the crystal substrate between the wafer and the substrate 81 and the poly 81. Using the formed wafers, the dependence of stacking faults on poly81-Rhin # plating time and saponification method was investigated. That side elbow II! The process is shown in Figure 3. The horizontal axis shows the oxidation-Kishikura of the 81 substrate after oxidation of Bo17SL, and the vertical axis shows the size of the VC1 horizontal layer defect. Po1J8L [If you debo directly onto the AI board,
Regardless of the polyscale thickness or oxidation method, it can be seen that the oxidation S* of the 81 substrate increases, indicating that stacking faults will continue to grow. Furthermore, it is estimated that defects will begin to occur when the 81 substrate is reduced to about 35 nm. - million, poly8
If 81 1j direct seeding units were deposited, 81 substrates or 110
When 0n is oxidized, defects of 1.6 μm to 2.1 pm occur, whereas stacking defects do not occur even when 81 substrates are made of kloOn. I understand that. In this specification of taxpaom,
Poly81 debossed rhinoceros is 200±2Qnm polyB1 (2
) time [70 minutes (tooo°C, wsttOn). In Lots 1 to 8, which were prototyped according to this specification, the lamination was long! I was not detected at all. However, if the variation r in the poly 81 deposit II thickness is 211 m, the poly 81 deposit theoretical thickness will vary from 180 mm to 220 mm, and along with this, the oxidized dust thickness of the s1 substrate will vary from 22 nm to 66 nm. Become. In this genre, the rate of defects occurring is high. Therefore, ON amplification,
Photoregie 4! ! Add (PSM photo), polyB
Congratulations on the process specification that prevents the occurrence of stacking faults during mono-oxidation (?). Figures (IL) and [Y]) show wrinkled fish hooks with stacking faults of oxide-j and oxidation-r, respectively.

According to the non-invention mentioned above in 夾JII-, BoIJB i
81 In the process of oxidation, the layer thickness generated on the surface of the 81 substrate is reduced, and the long-awaited problem of Schottky barrier diode failure due to VC is prevented.
-Expecting that the yield will change to v/1 jealousy #4
This is a comprehensive application of the manufacturing process for a conductor device formed on a poly ST2 substrate.

[Brief explanation of drawings]

No. 11N (IL) to (0 is a process lyT view of the memory cell process according to the present invention, lKZ diagram -) to (0) are enlarged plan views showing the stacking fault occurrence situation, and Fig. 3 is an enlarged plan view of the stacking fault 8.
1 Curved edge diagram showing the thickness dependence of the substrate, Figure 4-) (Koji is an enlarged plan view showing the morphology of stacking faults. 1-Pa1!81J% plate, 2-Nm buried layer, 3...
Nm epitaxial layer, 4... Isolation oxidation-15... ON diffusion layer, 6... Brass treatment, 7... Bo IJ 81 experiment. Death...81. N4 condition, 9... Poly B1 oxidation edition, 10.
...P base, 11...N Tsuta. 1 patent attorney Susuki 1) Ri Shin-1 1st Figure 1 1 Figure 2 (b) Figure 3, 1 m clWl of sl, a (xm ') Figure 14

Claims (1)

[Claims]! , #- In the manufacturing method of an MP conductor device having a polycrystalline conductor on the surface of the base body (E), the meridian conductor!
! forming polyacrylic crystalline parts on the surface through the first oxidation;
This polycrystalline IISRM is formed into a second oxidation,
This second oxidation imr etch is removed, and then the saponification of the stripe 1 is removed by the t~ value. 2. On the surface of the cow conductor substrate, form a first region where a metal electrode is provided in contact with the half body [il [[] and a second region where a metal electrode is provided on the live body surface through a polycrystalline body surface. In order to do this, a polycrystalline cow-specific film [formed] is formed on the tangle 1 (Z) region and the grooming 2 region in the state where a starvation patch has been formed on the dentition of the living part of the first region. , selectively oxidize the conductor wire on the area of the wire to form the second oxidizer, etch it away on this second plate 11, and inject it into the living body of the second area. Through the polycrystalline conductor record, the impurity wJt stops and after 7, the 112th) clear image on the image area of 紽1 is ejected, and the first i! In the area of 1 factory and A2, the νC electric disaster was carried out) to form metal and 1 special agent and T were dedicated to the production method.