JPS5642367A - Manufacture of bipolar integrated circuit - Google Patents
Manufacture of bipolar integrated circuitInfo
- Publication number
- JPS5642367A JPS5642367A JP11805379A JP11805379A JPS5642367A JP S5642367 A JPS5642367 A JP S5642367A JP 11805379 A JP11805379 A JP 11805379A JP 11805379 A JP11805379 A JP 11805379A JP S5642367 A JPS5642367 A JP S5642367A
- Authority
- JP
- Japan
- Prior art keywords
- film
- type
- diffused
- layer
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000005001 laminate film Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000002161 passivation Methods 0.000 abstract 1
- 238000001259 photo etching Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 230000003449 preventive effect Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To enable enhancement of an alkaline ion preventive property of the bipolar integrated circuit and enable a self-alignment of a base and emitter contact regions by employing a laminate film of SiO2 and Si3N4 as a passivation film formed on the surface of a substrate, and utilizing it for a diffused mask. CONSTITUTION:An n<+> type buried layer 12 is diffused in a p type Si substrate 11, an n type layer 13 is epitaxially grown on the whole surface, and is separated into an island shape through there oxide films 14. An n<+> type collector region 15 is diffused in the one island-shaped layer 13 to be connected to the layer 12, and a p<+> type base region 16 is diffused in the other layer 13. Thereafter, an SiO2 film 17 and an Si3N4 film 18 are laminated on the entire surface, holes 19-21 are opened only at the film 18, only the film 17 is removed in the hole 19 by a photoetching process, the region 16 is partly exposed, and a polycrystalline Si film 24 including n type impurity is formed thereat. Then, it is heat treated, the impurity in the film 24 is diffused, and an n<+> type emitter region 25 is formed, and aluminum and silicon electrodes are coated on the respective regions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11805379A JPS5642367A (en) | 1979-09-14 | 1979-09-14 | Manufacture of bipolar integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11805379A JPS5642367A (en) | 1979-09-14 | 1979-09-14 | Manufacture of bipolar integrated circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5642367A true JPS5642367A (en) | 1981-04-20 |
Family
ID=14726846
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11805379A Pending JPS5642367A (en) | 1979-09-14 | 1979-09-14 | Manufacture of bipolar integrated circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5642367A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58139442A (en) * | 1982-02-15 | 1983-08-18 | Hitachi Ltd | Manufacture of semiconductor device |
| JPS58197873A (en) * | 1982-05-14 | 1983-11-17 | Hitachi Ltd | Manufacture of semiconductor device |
| JPS60165166U (en) * | 1984-04-08 | 1985-11-01 | 三菱自動車工業株式会社 | Piston insertion tool |
| JPS60218873A (en) * | 1984-04-13 | 1985-11-01 | Rohm Co Ltd | Manufacture of semiconductor device |
| JPS6281227A (en) * | 1985-10-07 | 1987-04-14 | Morita Tekkosho:Kk | Clip caulking device |
| US4907063A (en) * | 1983-10-14 | 1990-03-06 | Hitachi, Ltd. | Semiconductor body, and device formed therefrom, having grooves with silicon nitride on the groove surfaces |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5119478A (en) * | 1974-08-09 | 1976-02-16 | Fujitsu Ltd | Handotaisochino seizohoho |
| JPS5488085A (en) * | 1977-12-26 | 1979-07-12 | Toshiba Corp | Nanufacture for semiconductor device |
-
1979
- 1979-09-14 JP JP11805379A patent/JPS5642367A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5119478A (en) * | 1974-08-09 | 1976-02-16 | Fujitsu Ltd | Handotaisochino seizohoho |
| JPS5488085A (en) * | 1977-12-26 | 1979-07-12 | Toshiba Corp | Nanufacture for semiconductor device |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58139442A (en) * | 1982-02-15 | 1983-08-18 | Hitachi Ltd | Manufacture of semiconductor device |
| JPH0462178B2 (en) * | 1982-02-15 | 1992-10-05 | Hitachi Ltd | |
| JPS58197873A (en) * | 1982-05-14 | 1983-11-17 | Hitachi Ltd | Manufacture of semiconductor device |
| JPH0462179B2 (en) * | 1982-05-14 | 1992-10-05 | Hitachi Ltd | |
| US4907063A (en) * | 1983-10-14 | 1990-03-06 | Hitachi, Ltd. | Semiconductor body, and device formed therefrom, having grooves with silicon nitride on the groove surfaces |
| JPS60165166U (en) * | 1984-04-08 | 1985-11-01 | 三菱自動車工業株式会社 | Piston insertion tool |
| JPH0417331Y2 (en) * | 1984-04-08 | 1992-04-17 | ||
| JPS60218873A (en) * | 1984-04-13 | 1985-11-01 | Rohm Co Ltd | Manufacture of semiconductor device |
| JPS6281227A (en) * | 1985-10-07 | 1987-04-14 | Morita Tekkosho:Kk | Clip caulking device |
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