JPS55128861A - Semiconductor integrated circuit device and method of fabricating the same - Google Patents
Semiconductor integrated circuit device and method of fabricating the sameInfo
- Publication number
- JPS55128861A JPS55128861A JP3547279A JP3547279A JPS55128861A JP S55128861 A JPS55128861 A JP S55128861A JP 3547279 A JP3547279 A JP 3547279A JP 3547279 A JP3547279 A JP 3547279A JP S55128861 A JPS55128861 A JP S55128861A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- bases
- shallower
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- 239000010408 film Substances 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 229920005591 polysilicon Polymers 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
- H01L27/0233—Integrated injection logic structures [I2L]
- H01L27/0244—I2L structures integrated in combination with analog structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To integrate and accelerate a semiconductor integrated circuit device by forming the outer bases in the same depth in a substrate of a transistor of a linear circuit and a reverse transistor of an I<2>L circuit and the inner bases shallower than the outer bases to bring polysilicon layers into contact with corresponding collectors, respectively. CONSTITUTION:An n<+>-type buried layer is formed on a n<->-type silicon substrate, an n<->-type epitaxial layer is suerimposed thereon to isolate it into I<2>L and linear regions, respectively. A p<+>- type layer 7 is formed on one region, an opening is then perforated at the base, and B ion implanted layer B1 is formed through an oxide thin film 8. A Si3N4 mask 4 is then formed at the I<2>L region, and a B ion implanted layer B2 is formed. When they are then diffused to form p-type bases 10, 11 thereon, an inner base 10b is formed shallower. The film 9 is then removed, the surface oxide film is then etched by self-matching manner, and a polysilicon layer 12 is selectively formed thereon. P is then accumulated on the entire surface to form n<+>-type collector 13 and an emitter 14 thereon. Thus, the layer 13 is formed shallower not to reach the inner base junction. A PSG 15 is then coated to form an aluminum electrode 16 thereon. Thus, the I<2>L and linear circuits are formed in high density integrity on the one substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3547279A JPS55128861A (en) | 1979-03-28 | 1979-03-28 | Semiconductor integrated circuit device and method of fabricating the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3547279A JPS55128861A (en) | 1979-03-28 | 1979-03-28 | Semiconductor integrated circuit device and method of fabricating the same |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55128861A true JPS55128861A (en) | 1980-10-06 |
Family
ID=12442711
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3547279A Pending JPS55128861A (en) | 1979-03-28 | 1979-03-28 | Semiconductor integrated circuit device and method of fabricating the same |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55128861A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5827356A (en) * | 1981-08-10 | 1983-02-18 | Toshiba Corp | Semiconductor integrated circuit |
JPS58139442A (en) * | 1982-02-15 | 1983-08-18 | Hitachi Ltd | Manufacture of semiconductor device |
JPS58197873A (en) * | 1982-05-14 | 1983-11-17 | Hitachi Ltd | Manufacture of semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5160177A (en) * | 1974-09-03 | 1976-05-25 | Western Electric Co | Handotaisochi oyobi sonoseizohoho |
JPS5261977A (en) * | 1975-11-18 | 1977-05-21 | Matsushita Electric Ind Co Ltd | Semiconductor integrated circuit device and its production |
-
1979
- 1979-03-28 JP JP3547279A patent/JPS55128861A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5160177A (en) * | 1974-09-03 | 1976-05-25 | Western Electric Co | Handotaisochi oyobi sonoseizohoho |
JPS5261977A (en) * | 1975-11-18 | 1977-05-21 | Matsushita Electric Ind Co Ltd | Semiconductor integrated circuit device and its production |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5827356A (en) * | 1981-08-10 | 1983-02-18 | Toshiba Corp | Semiconductor integrated circuit |
JPH0131305B2 (en) * | 1981-08-10 | 1989-06-26 | Tokyo Shibaura Electric Co | |
JPS58139442A (en) * | 1982-02-15 | 1983-08-18 | Hitachi Ltd | Manufacture of semiconductor device |
JPH0462178B2 (en) * | 1982-02-15 | 1992-10-05 | Hitachi Ltd | |
JPS58197873A (en) * | 1982-05-14 | 1983-11-17 | Hitachi Ltd | Manufacture of semiconductor device |
JPH0462179B2 (en) * | 1982-05-14 | 1992-10-05 | Hitachi Ltd |
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