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JPS55128861A - Semiconductor integrated circuit device and method of fabricating the same - Google Patents

Semiconductor integrated circuit device and method of fabricating the same

Info

Publication number
JPS55128861A
JPS55128861A JP3547279A JP3547279A JPS55128861A JP S55128861 A JPS55128861 A JP S55128861A JP 3547279 A JP3547279 A JP 3547279A JP 3547279 A JP3547279 A JP 3547279A JP S55128861 A JPS55128861 A JP S55128861A
Authority
JP
Japan
Prior art keywords
layer
type
bases
shallower
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3547279A
Other languages
Japanese (ja)
Inventor
Naonobu Sato
Takanori Nishimura
Norio Anzai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3547279A priority Critical patent/JPS55128861A/en
Publication of JPS55128861A publication Critical patent/JPS55128861A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0214Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233Integrated injection logic structures [I2L]
    • H01L27/0244I2L structures integrated in combination with analog structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To integrate and accelerate a semiconductor integrated circuit device by forming the outer bases in the same depth in a substrate of a transistor of a linear circuit and a reverse transistor of an I<2>L circuit and the inner bases shallower than the outer bases to bring polysilicon layers into contact with corresponding collectors, respectively. CONSTITUTION:An n<+>-type buried layer is formed on a n<->-type silicon substrate, an n<->-type epitaxial layer is suerimposed thereon to isolate it into I<2>L and linear regions, respectively. A p<+>- type layer 7 is formed on one region, an opening is then perforated at the base, and B ion implanted layer B1 is formed through an oxide thin film 8. A Si3N4 mask 4 is then formed at the I<2>L region, and a B ion implanted layer B2 is formed. When they are then diffused to form p-type bases 10, 11 thereon, an inner base 10b is formed shallower. The film 9 is then removed, the surface oxide film is then etched by self-matching manner, and a polysilicon layer 12 is selectively formed thereon. P is then accumulated on the entire surface to form n<+>-type collector 13 and an emitter 14 thereon. Thus, the layer 13 is formed shallower not to reach the inner base junction. A PSG 15 is then coated to form an aluminum electrode 16 thereon. Thus, the I<2>L and linear circuits are formed in high density integrity on the one substrate.
JP3547279A 1979-03-28 1979-03-28 Semiconductor integrated circuit device and method of fabricating the same Pending JPS55128861A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3547279A JPS55128861A (en) 1979-03-28 1979-03-28 Semiconductor integrated circuit device and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3547279A JPS55128861A (en) 1979-03-28 1979-03-28 Semiconductor integrated circuit device and method of fabricating the same

Publications (1)

Publication Number Publication Date
JPS55128861A true JPS55128861A (en) 1980-10-06

Family

ID=12442711

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3547279A Pending JPS55128861A (en) 1979-03-28 1979-03-28 Semiconductor integrated circuit device and method of fabricating the same

Country Status (1)

Country Link
JP (1) JPS55128861A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5827356A (en) * 1981-08-10 1983-02-18 Toshiba Corp Semiconductor integrated circuit
JPS58139442A (en) * 1982-02-15 1983-08-18 Hitachi Ltd Manufacture of semiconductor device
JPS58197873A (en) * 1982-05-14 1983-11-17 Hitachi Ltd Manufacture of semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5160177A (en) * 1974-09-03 1976-05-25 Western Electric Co Handotaisochi oyobi sonoseizohoho
JPS5261977A (en) * 1975-11-18 1977-05-21 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device and its production

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5160177A (en) * 1974-09-03 1976-05-25 Western Electric Co Handotaisochi oyobi sonoseizohoho
JPS5261977A (en) * 1975-11-18 1977-05-21 Matsushita Electric Ind Co Ltd Semiconductor integrated circuit device and its production

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5827356A (en) * 1981-08-10 1983-02-18 Toshiba Corp Semiconductor integrated circuit
JPH0131305B2 (en) * 1981-08-10 1989-06-26 Tokyo Shibaura Electric Co
JPS58139442A (en) * 1982-02-15 1983-08-18 Hitachi Ltd Manufacture of semiconductor device
JPH0462178B2 (en) * 1982-02-15 1992-10-05 Hitachi Ltd
JPS58197873A (en) * 1982-05-14 1983-11-17 Hitachi Ltd Manufacture of semiconductor device
JPH0462179B2 (en) * 1982-05-14 1992-10-05 Hitachi Ltd

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