JPS5578568A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5578568A JPS5578568A JP15225878A JP15225878A JPS5578568A JP S5578568 A JPS5578568 A JP S5578568A JP 15225878 A JP15225878 A JP 15225878A JP 15225878 A JP15225878 A JP 15225878A JP S5578568 A JPS5578568 A JP S5578568A
- Authority
- JP
- Japan
- Prior art keywords
- impurity
- region
- layer
- film
- yielded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 239000012535 impurity Substances 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0839—Cathode regions of thyristors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To obtain electrodes having excellent ohmic contact by selectively forming the second impurity-diffused layer after the first impurity diffused layer has been formed on a semiconductor substrate, then, removing the first impurity-diffused layer, and forming metal electrodes on the exposed surfaces. CONSTITUTION:At the stage an n-type emitter layer 5 is formed on the surface of a p-type base layer 4, an impurity-density reduced region 6 is yielded on the surface of the layer 4, and an SiO2 film 7 is formed on the region 6. An impurity- density reduced region 8 is also yielded on the surface of a p-type emitter layer 2, and an SiO2 film 9 is formed on the region 8. Then, after the layers 5 and 4, the film 7 on the region 6, and the film 9 have been removed, the regions 6 and 8 are removed by lapping, etching, and the like; and the surfaces of the layers 4 and 2, which have a high impurity density, are exposed. Thereafter, metal electrodes are formed on both the exposed surfaces.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15225878A JPS5578568A (en) | 1978-12-08 | 1978-12-08 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15225878A JPS5578568A (en) | 1978-12-08 | 1978-12-08 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5578568A true JPS5578568A (en) | 1980-06-13 |
Family
ID=15536541
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15225878A Pending JPS5578568A (en) | 1978-12-08 | 1978-12-08 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5578568A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60182774A (en) * | 1984-02-29 | 1985-09-18 | Matsushita Electronics Corp | Manufacture of fet |
| JP2004103763A (en) * | 2002-09-09 | 2004-04-02 | Fuji Electric Device Technology Co Ltd | Method for manufacturing semiconductor device |
-
1978
- 1978-12-08 JP JP15225878A patent/JPS5578568A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60182774A (en) * | 1984-02-29 | 1985-09-18 | Matsushita Electronics Corp | Manufacture of fet |
| JPH0654811B2 (en) * | 1984-02-29 | 1994-07-20 | 松下電子工業株式会社 | Method for manufacturing field effect transistor |
| JP2004103763A (en) * | 2002-09-09 | 2004-04-02 | Fuji Electric Device Technology Co Ltd | Method for manufacturing semiconductor device |
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