JPS5482981A - Nanufacture of semiconductor device - Google Patents
Nanufacture of semiconductor deviceInfo
- Publication number
- JPS5482981A JPS5482981A JP15081777A JP15081777A JPS5482981A JP S5482981 A JPS5482981 A JP S5482981A JP 15081777 A JP15081777 A JP 15081777A JP 15081777 A JP15081777 A JP 15081777A JP S5482981 A JPS5482981 A JP S5482981A
- Authority
- JP
- Japan
- Prior art keywords
- film
- region
- type
- heat treatment
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Abstract
PURPOSE: To secure the self-alignment to increase the degree of integration by coating the film containing the impurity on the semiconductor substrate and providing the electrode after diffusing the impurity in the film through the heat treatment.
CONSTITUTION: N-type buried region 102a is provided within p-type Si substrate 101, and N-layer 103 is epitaxial-grown on the entire surface to oxidizing selectively via Si3N4 film 105a and 105b used as the mask. And SiO2 film 104 thus caused is used to isolate layer 103 into an island form. Then photo resist film 106 containing an opening is provided on the collector forming region; film 105b is etched away; and P-type collector region 102b is formed through diffusion. After this, film 105a is removed, and B2O3 film 107 and Si3N4 film 108 are coated on the entire film. Then P-type region 109 is formed through the heat treatment and then covered with resist film 110 at the prescribed area. Film 107 is then removed selectively to form P+-type region 111 and P-type region 112 simultaneously through the heat treatment, and P2O5 film 113 is provided to form N+-type emitter region 114 within region 112 through the heat treatment. After this, electrode 116, 114 and 115 are attached to region 111, 114 and 102b respectively.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15081777A JPS5482981A (en) | 1977-12-14 | 1977-12-14 | Nanufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15081777A JPS5482981A (en) | 1977-12-14 | 1977-12-14 | Nanufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5482981A true JPS5482981A (en) | 1979-07-02 |
JPS6115589B2 JPS6115589B2 (en) | 1986-04-24 |
Family
ID=15505054
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15081777A Granted JPS5482981A (en) | 1977-12-14 | 1977-12-14 | Nanufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5482981A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61224448A (en) * | 1985-03-29 | 1986-10-06 | Toshiba Corp | Manufacture of semiconductor device |
-
1977
- 1977-12-14 JP JP15081777A patent/JPS5482981A/en active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61224448A (en) * | 1985-03-29 | 1986-10-06 | Toshiba Corp | Manufacture of semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPS6115589B2 (en) | 1986-04-24 |
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