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JPS54111793A - Semiconductor integrated circuit device and its manufacture - Google Patents

Semiconductor integrated circuit device and its manufacture

Info

Publication number
JPS54111793A
JPS54111793A JP1844678A JP1844678A JPS54111793A JP S54111793 A JPS54111793 A JP S54111793A JP 1844678 A JP1844678 A JP 1844678A JP 1844678 A JP1844678 A JP 1844678A JP S54111793 A JPS54111793 A JP S54111793A
Authority
JP
Japan
Prior art keywords
film
diode
region
electrode
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1844678A
Other languages
Japanese (ja)
Inventor
Hideaki Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1844678A priority Critical patent/JPS54111793A/en
Publication of JPS54111793A publication Critical patent/JPS54111793A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE: To decrease the forward voltage of diode and to increase the degree of integration, by forming only the electrode of diode by Al and forming other electrodes of semiconductor element with Al including Si, in the IC having Schottky barrier diode element.
CONSTITUTION: The P+ type base region 2 is formed by diffusion on the semiconductor substrate providing the N type epitaxial layer 1 and the N+ type emitter region 3 is placed in it. Next, the full surface is covered with the SiO2 film 4 and window is opened on the region 3, the Al film 7 including Si of several % is coated on the entire surface and conection is made between the region 3 and it. After that, the films 4 and 7 of the Schottky barrier diode electrodes bridged on the region 2 and the layer 1 are removed by etching and the Al film 8 is coated on the entire surface. Next, the film 8 is remained only at the diode electrode and others are removed, and the emitter electrode 9 is attached to the film 7 exposed. Thus, the area of the diode can be reduced.
COPYRIGHT: (C)1979,JPO&Japio
JP1844678A 1978-02-22 1978-02-22 Semiconductor integrated circuit device and its manufacture Pending JPS54111793A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1844678A JPS54111793A (en) 1978-02-22 1978-02-22 Semiconductor integrated circuit device and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1844678A JPS54111793A (en) 1978-02-22 1978-02-22 Semiconductor integrated circuit device and its manufacture

Publications (1)

Publication Number Publication Date
JPS54111793A true JPS54111793A (en) 1979-09-01

Family

ID=11971843

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1844678A Pending JPS54111793A (en) 1978-02-22 1978-02-22 Semiconductor integrated circuit device and its manufacture

Country Status (1)

Country Link
JP (1) JPS54111793A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5623774A (en) * 1979-08-01 1981-03-06 Hitachi Ltd Semiconductor device and its manufacture

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51111084A (en) * 1975-03-26 1976-10-01 Hitachi Ltd Semiconductor device manufucturing proceso

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51111084A (en) * 1975-03-26 1976-10-01 Hitachi Ltd Semiconductor device manufucturing proceso

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5623774A (en) * 1979-08-01 1981-03-06 Hitachi Ltd Semiconductor device and its manufacture

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