JP5498768B2 - リソグラフィー用洗浄液及び配線形成方法 - Google Patents
リソグラフィー用洗浄液及び配線形成方法 Download PDFInfo
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- JP5498768B2 JP5498768B2 JP2009274394A JP2009274394A JP5498768B2 JP 5498768 B2 JP5498768 B2 JP 5498768B2 JP 2009274394 A JP2009274394 A JP 2009274394A JP 2009274394 A JP2009274394 A JP 2009274394A JP 5498768 B2 JP5498768 B2 JP 5498768B2
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- cleaning liquid
- lithography
- water
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- 238000004140 cleaning Methods 0.000 title claims description 57
- 238000000034 method Methods 0.000 title claims description 45
- 239000007788 liquid Substances 0.000 title claims description 43
- 238000001459 lithography Methods 0.000 claims description 45
- 239000003960 organic solvent Substances 0.000 claims description 30
- 238000005530 etching Methods 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 27
- 239000002184 metal Substances 0.000 claims description 27
- 229910052721 tungsten Inorganic materials 0.000 claims description 22
- 125000004432 carbon atom Chemical group C* 0.000 claims description 21
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 21
- 239000010937 tungsten Substances 0.000 claims description 21
- 125000000217 alkyl group Chemical group 0.000 claims description 16
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000000908 ammonium hydroxide Substances 0.000 claims description 9
- 125000001453 quaternary ammonium group Chemical group 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 8
- 125000002768 hydroxyalkyl group Chemical group 0.000 claims description 7
- 150000007529 inorganic bases Chemical class 0.000 claims description 7
- 125000003118 aryl group Chemical group 0.000 claims description 5
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 238000004587 chromatography analysis Methods 0.000 claims 1
- 238000005406 washing Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 60
- 239000000463 material Substances 0.000 description 53
- 238000005260 corrosion Methods 0.000 description 23
- 230000007797 corrosion Effects 0.000 description 22
- 150000001875 compounds Chemical class 0.000 description 20
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 12
- 239000000758 substrate Substances 0.000 description 12
- -1 4-methyl-1H-benzotriazol-1-yl Chemical group 0.000 description 11
- 239000010949 copper Substances 0.000 description 11
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 9
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 8
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 5
- 150000002430 hydrocarbons Chemical group 0.000 description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 5
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 5
- 239000004094 surface-active agent Substances 0.000 description 5
- PMNLUUOXGOOLSP-UHFFFAOYSA-N 2-mercaptopropanoic acid Chemical compound CC(S)C(O)=O PMNLUUOXGOOLSP-UHFFFAOYSA-N 0.000 description 4
- 125000001931 aliphatic group Chemical group 0.000 description 4
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 4
- 150000001565 benzotriazoles Chemical class 0.000 description 4
- 230000002401 inhibitory effect Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 125000001424 substituent group Chemical group 0.000 description 4
- PRVLWKMLAPTNIR-UHFFFAOYSA-N 2-butyl-5-methyl-1h-imidazole Chemical compound CCCCC1=NC=C(C)N1 PRVLWKMLAPTNIR-UHFFFAOYSA-N 0.000 description 3
- RIAHASMJDOMQER-UHFFFAOYSA-N 5-ethyl-2-methyl-1h-imidazole Chemical compound CCC1=CN=C(C)N1 RIAHASMJDOMQER-UHFFFAOYSA-N 0.000 description 3
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 description 3
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 125000004183 alkoxy alkyl group Chemical group 0.000 description 3
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Natural products C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 3
- 238000004380 ashing Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000012964 benzotriazole Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 125000004122 cyclic group Chemical group 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 3
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 description 3
- 239000012046 mixed solvent Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 3
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 3
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 3
- 125000003396 thiol group Chemical group [H]S* 0.000 description 3
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 2
- GIWQSPITLQVMSG-UHFFFAOYSA-N 1,2-dimethylimidazole Chemical compound CC1=NC=CN1C GIWQSPITLQVMSG-UHFFFAOYSA-N 0.000 description 2
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
- MCTWTZJPVLRJOU-UHFFFAOYSA-N 1-methyl-1H-imidazole Chemical compound CN1C=CN=C1 MCTWTZJPVLRJOU-UHFFFAOYSA-N 0.000 description 2
- ZBJLUVHQIPUCPM-UHFFFAOYSA-N 1-phenylbenzotriazole Chemical compound C1=CC=CC=C1N1C2=CC=CC=C2N=N1 ZBJLUVHQIPUCPM-UHFFFAOYSA-N 0.000 description 2
- LLPKQRMDOFYSGZ-UHFFFAOYSA-N 2,5-dimethyl-1h-imidazole Chemical compound CC1=CN=C(C)N1 LLPKQRMDOFYSGZ-UHFFFAOYSA-N 0.000 description 2
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 2
- HHYPDQBCLQZKLI-UHFFFAOYSA-N 2-[2-hydroxyethyl-[(5-methylbenzotriazol-1-yl)methyl]amino]ethanol Chemical compound CC1=CC=C2N(CN(CCO)CCO)N=NC2=C1 HHYPDQBCLQZKLI-UHFFFAOYSA-N 0.000 description 2
- WVIXTJQLKOLKTQ-UHFFFAOYSA-N 3-(benzotriazol-1-yl)propane-1,2-diol Chemical compound C1=CC=C2N(CC(O)CO)N=NC2=C1 WVIXTJQLKOLKTQ-UHFFFAOYSA-N 0.000 description 2
- LDMRLRNXHLPZJN-UHFFFAOYSA-N 3-propoxypropan-1-ol Chemical compound CCCOCCCO LDMRLRNXHLPZJN-UHFFFAOYSA-N 0.000 description 2
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 125000002029 aromatic hydrocarbon group Chemical group 0.000 description 2
- 239000012965 benzophenone Substances 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N ethylene glycol monomethyl ether acetate Natural products COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- JBFHTYHTHYHCDJ-UHFFFAOYSA-N gamma-caprolactone Chemical compound CCC1CCC(=O)O1 JBFHTYHTHYHCDJ-UHFFFAOYSA-N 0.000 description 2
- 238000011086 high cleaning Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- PJUIMOJAAPLTRJ-UHFFFAOYSA-N monothioglycerol Chemical compound OCC(O)CS PJUIMOJAAPLTRJ-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N naphthalene-acid Natural products C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 description 2
- CPRMKOQKXYSDML-UHFFFAOYSA-M rubidium hydroxide Chemical compound [OH-].[Rb+] CPRMKOQKXYSDML-UHFFFAOYSA-M 0.000 description 2
- HHVIBTZHLRERCL-UHFFFAOYSA-N sulfonyldimethane Chemical compound CS(C)(=O)=O HHVIBTZHLRERCL-UHFFFAOYSA-N 0.000 description 2
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 description 2
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 description 1
- 229940058015 1,3-butylene glycol Drugs 0.000 description 1
- AZLXQBNSOMJQEJ-UHFFFAOYSA-N 1,3-di(propan-2-yl)imidazolidin-2-one Chemical compound CC(C)N1CCN(C(C)C)C1=O AZLXQBNSOMJQEJ-UHFFFAOYSA-N 0.000 description 1
- NYCCIHSMVNRABA-UHFFFAOYSA-N 1,3-diethylimidazolidin-2-one Chemical compound CCN1CCN(CC)C1=O NYCCIHSMVNRABA-UHFFFAOYSA-N 0.000 description 1
- VKXMUYIAJVLZOM-UHFFFAOYSA-N 1-(2-aminophenyl)sulfanyl-3-sulfanylpropan-2-ol Chemical compound NC1=CC=CC=C1SCC(O)CS VKXMUYIAJVLZOM-UHFFFAOYSA-N 0.000 description 1
- WDQFELCEOPFLCZ-UHFFFAOYSA-N 1-(2-hydroxyethyl)pyrrolidin-2-one Chemical compound OCCN1CCCC1=O WDQFELCEOPFLCZ-UHFFFAOYSA-N 0.000 description 1
- KVFLEGRBTUDZRD-UHFFFAOYSA-N 1-(2-hydroxyethylsulfanyl)-3-sulfanylpropan-2-ol Chemical compound OCCSCC(O)CS KVFLEGRBTUDZRD-UHFFFAOYSA-N 0.000 description 1
- PJEXUIKBGBSHBS-UHFFFAOYSA-N 1-(hydroxymethyl)pyrrolidin-2-one Chemical compound OCN1CCCC1=O PJEXUIKBGBSHBS-UHFFFAOYSA-N 0.000 description 1
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 description 1
- ASOKPJOREAFHNY-UHFFFAOYSA-N 1-Hydroxybenzotriazole Chemical compound C1=CC=C2N(O)N=NC2=C1 ASOKPJOREAFHNY-UHFFFAOYSA-N 0.000 description 1
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- ZHPSBMQVLQEIIC-UHFFFAOYSA-N 1-methoxybenzotriazole Chemical compound C1=CC=C2N(OC)N=NC2=C1 ZHPSBMQVLQEIIC-UHFFFAOYSA-N 0.000 description 1
- HXQHRUJXQJEGER-UHFFFAOYSA-N 1-methylbenzotriazole Chemical compound C1=CC=C2N(C)N=NC2=C1 HXQHRUJXQJEGER-UHFFFAOYSA-N 0.000 description 1
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- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 description 1
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- GUOVBFFLXKJFEE-UHFFFAOYSA-N 2h-benzotriazole-5-carboxylic acid Chemical compound C1=C(C(=O)O)C=CC2=NNN=C21 GUOVBFFLXKJFEE-UHFFFAOYSA-N 0.000 description 1
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- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 125000001511 cyclopentyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C1([H])[H] 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
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- 238000007598 dipping method Methods 0.000 description 1
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- 125000001841 imino group Chemical group [H]N=* 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 150000003951 lactams Chemical class 0.000 description 1
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- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- DLEZVOPJBSAAGW-UHFFFAOYSA-N methyl benzotriazole-1-carboxylate Chemical compound C1=CC=C2N(C(=O)OC)N=NC2=C1 DLEZVOPJBSAAGW-UHFFFAOYSA-N 0.000 description 1
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 description 1
- KTDMLSMSWDJKGA-UHFFFAOYSA-M methyl(tripropyl)azanium;hydroxide Chemical compound [OH-].CCC[N+](C)(CCC)CCC KTDMLSMSWDJKGA-UHFFFAOYSA-M 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- NVTNQIBQPLGHGE-UHFFFAOYSA-N n,n-dibutylbutan-1-amine;hydrate Chemical compound [OH-].CCCC[NH+](CCCC)CCCC NVTNQIBQPLGHGE-UHFFFAOYSA-N 0.000 description 1
- AJFDBNQQDYLMJN-UHFFFAOYSA-N n,n-diethylacetamide Chemical compound CCN(CC)C(C)=O AJFDBNQQDYLMJN-UHFFFAOYSA-N 0.000 description 1
- XVHLHUNZWRKZPF-UHFFFAOYSA-N n-[(4-methylbenzotriazol-1-yl)methyl]-n-propan-2-ylpropan-2-amine Chemical compound C1=CC=C2N(CN(C(C)C)C(C)C)N=NC2=C1C XVHLHUNZWRKZPF-UHFFFAOYSA-N 0.000 description 1
- RUFMRRIYNIOMBR-UHFFFAOYSA-N n-ethyl-n-[(4-methylbenzotriazol-1-yl)methyl]ethanamine Chemical compound C1=CC=C2N(CN(CC)CC)N=NC2=C1C RUFMRRIYNIOMBR-UHFFFAOYSA-N 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001037 p-tolyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1*)C([H])([H])[H] 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
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- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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- 150000003856 quaternary ammonium compounds Chemical class 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 150000005846 sugar alcohols Polymers 0.000 description 1
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 125000004963 sulfonylalkyl group Chemical group 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- ZMANZCXQSJIPKH-UHFFFAOYSA-O triethylammonium ion Chemical compound CC[NH+](CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-O 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- PAPBSGBWRJIAAV-UHFFFAOYSA-N ε-Caprolactone Chemical compound O=C1CCCCCO1 PAPBSGBWRJIAAV-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
また、4級アンモニウム水酸化物を主成分とし、さらに全量に対して1質量%以下の水酸化カリウムを添加したリソグラフィー用洗浄液も提案されている(特許文献3を参照)。このように水酸化カリウムを添加したリソグラフィー用洗浄液は、銅やILD材料といった易腐食性材料を腐食することなく、除去性能をより高い水準に保つことができるものであった。
本発明に係るリソグラフィー用洗浄液は、4級アンモニウム水酸化物と、水溶性有機溶剤と、水と、無機塩基と、防食剤とを含有する。以下、本発明を詳細に説明するが、各材料については特に断らない限りは市販のものを用いることができる。
4級アンモニウム水酸化物としては、下記一般式(2)で表される化合物が好ましい。
水溶性有機溶剤としては、当該分野で慣用される化合物を用いることができる。水溶性有機溶剤は、アルカノールアミン系水溶性有機溶剤とそれ以外の水溶性有機溶剤とに大別され、適宜選択して用いることができる。
水の含有量は、リソグラフィー用洗浄液全量に対し、10〜80質量%であることが好ましく、15〜70質量%であることがより好ましい。このような含有量とすることにより、銅、ILD材料等の腐食を抑えながら、レジスト膜、犠牲膜、さらにはエッチング工程において生じた金属配線層や低誘電体層由来の残渣物を効果的に除去することができる。
無機塩基としては、水酸化カリウム、水酸化ナトリウム、水酸化ルビジウム等のアルカリ金属の水酸化物が好ましく、水酸化カリウムがより好ましい。無機塩基の含有量は、リソグラフィー用洗浄液全量に対し、0.1質量ppm〜1質量%であることが好ましく、1質量ppm〜0.5質量%であることがより好ましい。このような含有量とすることにより、銅、ILD材料等の腐食を抑えながら、犠牲膜に対する除去性能を高めることができる。
防食剤としては、下記一般式(1)で表される化合物が用いられる。
本発明に係るリソグラフィー用洗浄液は、必要に応じて界面活性剤を含有していてもよい。このような界面活性剤としては、アセチレンアルコール系界面活性剤等を好ましく用いることができる。界面活性剤の含有量は、リソグラフィー用洗浄液全量に対し、0.5質量%未満であることが好ましい。
本発明に係る配線形成方法は、レジスト膜を用いて半導体多層積層体の誘電体層に形成したエッチング空間に金属を埋め込むことによって金属配線層を形成する、ダマシン法を用いた配線形成方法において、上記エッチング空間の形成後に、本発明に係るリソグラフィー用洗浄液を用いて少なくとも上記レジスト膜を除去するものである。
ダマシン法を用いた配線形成方法は、より具体的には、半導体多層積層体の低誘電体層上に形成したレジストパターンをマスクとして、上記低誘電体層をエッチング処理してエッチング空間を形成し、このエッチング空間に金属を埋め込むことによって金属配線を形成するものである。なお、エッチング空間には、一時的に犠牲膜が埋め込まれる場合がある。
下記表1に示す組成及び配合量に基づき、リソグラフィー用洗浄液を調製した。なお、各試薬については、特に記載の無いものに関しては、一般に市販されている試薬を用いた。また、表中の数値は、特に断りの無い限り、質量%の単位で示されるものである。
TEAH : テトラエチルアンモニウム水酸化物
EMI : 2−エチル−4−メチルイミダゾール
BMI : 2−n−ブチル−4−メチルイミダゾール
PMI : 2−フェニル−4−メチルイミダゾール
MEI : 2−メチル−4−エチルイミダゾール
BTA : ベンゾトリアゾール
1,2DMI : 1,2−ジメチルイミダゾール
NMI : N−メチルイミダゾール
2MPA : 2−メルカプトプロピオン酸
EDG : ジエチレングリコールモノエチルエーテル
DMSO : ジメチルスルホキシド
タングステン層が形成された基板上に、第1層としてSiCからなるバリア層を、第2層としてLow−k材からなる低誘電体層(誘電体層はCVD蒸着膜)を形成し、その上にArFレジスト材料「TArF−P6111」(東京応化工業社製)を用いてレジスト膜を形成した。そして、リソグラフィー法によりレジストパターン形成し、そのレジストパターンをマスクとして低誘電体層をエッチングし、バリア層に連通するビアホールを形成した。
一方、比較例1では防食剤が存在しないため、タングステンに腐食が発生していた。また、防食材としてベンゾトリアゾール、1,2−ジメチルイミダゾール、N−メチルイミダゾール、2−メルカプトプロピオン酸を含有する比較例2〜5のリソグラフィー用洗浄液を用いた場合には、タングステンに対する腐食抑制効果がなく、タングステンに腐食が発生していた。
Claims (3)
- 前記防食剤の含有量が0.1〜10.0質量%である請求項1記載のリソグラフィー用洗浄液。
- レジスト膜を用いて半導体多層積層体の誘電体層に形成したエッチング空間に金属を埋め込むことによって金属配線層を形成する配線形成方法において、
前記半導体多層積層体はタングステンプラグが形成された層を含み、該タングステンプラグが形成された層上の誘電体層にエッチング空間が形成されており、
前記エッチング空間の形成後に、リソグラフィー用洗浄液を用いて少なくとも前記レジスト膜を除去する工程を含み、
前記リソグラフィー用洗浄液が、4級アンモニウム水酸化物と、水溶性有機溶剤と、水と、無機塩基と、下記一般式(1)で表される防食剤とを含有する配線形成方法。
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JP6493396B2 (ja) | 2014-05-02 | 2019-04-03 | 三菱瓦斯化学株式会社 | 半導体素子の洗浄液及び洗浄方法 |
WO2016076034A1 (ja) | 2014-11-13 | 2016-05-19 | 三菱瓦斯化学株式会社 | 半導体素子を洗浄するためのアルカリ土類金属を含む洗浄液、およびそれを用いた半導体素子の洗浄方法 |
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