JP5067739B2 - 磁性薄膜とその成膜方法並びに磁性薄膜の応用デバイス - Google Patents
磁性薄膜とその成膜方法並びに磁性薄膜の応用デバイス Download PDFInfo
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- JP5067739B2 JP5067739B2 JP2008193156A JP2008193156A JP5067739B2 JP 5067739 B2 JP5067739 B2 JP 5067739B2 JP 2008193156 A JP2008193156 A JP 2008193156A JP 2008193156 A JP2008193156 A JP 2008193156A JP 5067739 B2 JP5067739 B2 JP 5067739B2
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- 230000005291 magnetic effect Effects 0.000 title claims description 122
- 239000010409 thin film Substances 0.000 title claims description 64
- 239000010408 film Substances 0.000 title claims description 43
- 238000000034 method Methods 0.000 title claims description 21
- 239000000758 substrate Substances 0.000 claims description 31
- 229910001260 Pt alloy Inorganic materials 0.000 claims description 30
- 230000005415 magnetization Effects 0.000 claims description 26
- 239000000203 mixture Substances 0.000 claims description 23
- 229910045601 alloy Inorganic materials 0.000 claims description 18
- 239000000956 alloy Substances 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 230000005294 ferromagnetic effect Effects 0.000 claims description 7
- 229910052697 platinum Inorganic materials 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 31
- 239000013078 crystal Substances 0.000 description 12
- 229910020707 Co—Pt Inorganic materials 0.000 description 8
- 230000015654 memory Effects 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- IYLGZMTXKJYONK-ACLXAEORSA-N (12s,15r)-15-hydroxy-11,16-dioxo-15,20-dihydrosenecionan-12-yl acetate Chemical compound O1C(=O)[C@](CC)(O)C[C@@H](C)[C@](C)(OC(C)=O)C(=O)OCC2=CCN3[C@H]2[C@H]1CC3 IYLGZMTXKJYONK-ACLXAEORSA-N 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- IYLGZMTXKJYONK-UHFFFAOYSA-N ruwenine Natural products O1C(=O)C(CC)(O)CC(C)C(C)(OC(C)=O)C(=O)OCC2=CCN3C2C1CC3 IYLGZMTXKJYONK-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910018979 CoPt Inorganic materials 0.000 description 2
- 230000005290 antiferromagnetic effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000006249 magnetic particle Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- -1 Co is 10~35 (at%) Substances 0.000 description 1
- 229910005335 FePt Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
- G11B5/656—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing Co
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/16—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing cobalt
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
- G11B5/82—Disk carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/11—Magnetic recording head
- Y10T428/115—Magnetic layer composition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/32—Composite [nonstructural laminate] of inorganic material having metal-compound-containing layer and having defined magnetic layer
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
- Magnetic Heads (AREA)
- Hall/Mr Elements (AREA)
Description
また、フラッシュメモリの10分の1程度の低消費電力、高集積性が可能などの長所がある。
1)このL11型Co-Ni-Pt膜は大きな一軸磁気異方性Kuを有するが、高Kuを持つことで一般に広く注目されているL10型Fe-Pt規則化合金膜よりも、以下の点で優れている。
2)また、L11型Co-Ni-Pt膜のKu,ならびに,飽和磁化Msは、いずれも、組成に依存して変化するため、組成の調整により、Ku及びMsの制御が可能である。特に、詳細は後述するが、CoをNiで置換することで、Co-Pt二元よりも、Msを低く抑えながら高Ku化が実現できる。即ち、二元合金で同じMsとなる組成と比較してKuが高くできる領域が存在する。また、Co-Pt二元よりも、低Pt濃度で、同様な特性が実現できる。
また、当該領域は、Co-Pt二元に比較して、少ないPt量で、同様な磁気特性が実現できる点が利点となる。
2 シード層
3 下地層
4 磁性層
5 保護層
Claims (11)
- L11型の原子の規則構造を有するCo-M-Pt合金(前記Mは単一若しくは複数のCo,Pt以外の金属元素を示す。)を含む磁性薄膜であって、前記Co-M-Pt合金は、Co-Ni-Pt合金またはCo-Ni-M2-Pt(前記M2は単一若しくは複数のCo,Ni,Pt以外の金属元素を示す。)であるか、もしくは、Co-Fe-Pt合金またはCo-Fe-M3-Pt(前記M3は単一若しくは複数のCo,Fe,Pt以外の金属元素を示す。)であることを特徴とする磁性薄膜。
- L11型の原子の規則構造を有するCo-M-Pt合金(前記Mは単一若しくは複数のCo,Pt以外の金属元素を示す。)を主成分とする強磁性結晶粒とそれを取り囲む非磁性粒界とからなるグラニュラ構造を備えることを特徴とする請求項1記載の磁性薄膜。
- 前記磁性薄膜の磁化容易軸が膜面に垂直に配向していることを特徴とする請求項1または2に記載の磁性薄膜。
- 前記Co-M-Pt合金は、Co-Ni-Pt合金であり、組成は、Coが10〜35(at%)、Niが20〜55(at%)、残部はPtであることを特徴とする請求項1乃至3のいずれか1項に記載の磁性薄膜。
- 基体上に、請求項1乃至4のいずれか1項に記載の磁性薄膜を成膜する方法であって、前記基体温度を150℃〜500℃の範囲とし、成膜前の真空度が1×10-4Pa以下の高真空マグネトロンスパッタ法により形成することを特徴とする磁性薄膜の成膜方法。
- 前記基体温度が270℃〜400℃の範囲であることを特徴とする請求項5に記載の磁性薄膜の成膜方法。
- 前記真空度が7×10-7Pa以下であることを特徴とする請求項5または6に記載の磁性薄膜の成膜方法。
- 基体上に、少なくとも磁性層を形成してなる垂直磁気記録媒体において、前記磁性層が請求項1乃至4のいずれか1項に記載の磁性薄膜であることを特徴とする垂直磁気記録媒体。
- 請求項1ないし4のいずれか1項に記載の磁性薄膜を備えたことを特徴とするトンネル磁気抵抗素子(TMR)。
- 請求項1ないし4のいずれか1項に記載の磁性薄膜を備えたことを特徴とする磁気抵抗ランダムアクセスメモリ(MRAM)。
- 請求項1ないし4のいずれか1項に記載の磁性薄膜を備えたことを特徴とするMEMSデバイス。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2008193156A JP5067739B2 (ja) | 2008-07-28 | 2008-07-28 | 磁性薄膜とその成膜方法並びに磁性薄膜の応用デバイス |
CN200910152089.2A CN101640098B (zh) | 2008-07-28 | 2009-07-28 | 磁性薄膜及其成膜方法以及磁性薄膜的应用装置 |
US12/510,878 US8076012B2 (en) | 2008-07-28 | 2009-07-28 | Magnetic thin film and method for forming the film, and magnetic thin film-applied device |
Applications Claiming Priority (1)
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JP2008193156A JP5067739B2 (ja) | 2008-07-28 | 2008-07-28 | 磁性薄膜とその成膜方法並びに磁性薄膜の応用デバイス |
Publications (3)
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JP2010034182A JP2010034182A (ja) | 2010-02-12 |
JP2010034182A5 JP2010034182A5 (ja) | 2012-03-15 |
JP5067739B2 true JP5067739B2 (ja) | 2012-11-07 |
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JP2008193156A Active JP5067739B2 (ja) | 2008-07-28 | 2008-07-28 | 磁性薄膜とその成膜方法並びに磁性薄膜の応用デバイス |
Country Status (3)
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US (1) | US8076012B2 (ja) |
JP (1) | JP5067739B2 (ja) |
CN (1) | CN101640098B (ja) |
Families Citing this family (12)
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JP5550007B2 (ja) * | 2008-12-05 | 2014-07-16 | 国立大学法人東北大学 | 磁性薄膜及びその製造方法、並びにこのような磁性薄膜を用いた各種応用デバイス |
CN102163433B (zh) * | 2010-02-23 | 2013-12-25 | 昭和电工株式会社 | 热辅助磁记录介质和磁存储装置 |
JP5570270B2 (ja) * | 2010-03-29 | 2014-08-13 | 昭和電工株式会社 | 熱アシスト磁気記録媒体及び磁気記憶装置 |
JP5346348B2 (ja) * | 2011-02-23 | 2013-11-20 | 株式会社日立製作所 | 磁気記録媒体、磁気記録装置 |
US8481181B2 (en) | 2011-03-31 | 2013-07-09 | Seagate Technology Llc | Exchange coupled magnetic elements |
US8742518B2 (en) | 2011-03-31 | 2014-06-03 | Seagate Technology Llc | Magnetic tunnel junction with free layer having exchange coupled magnetic elements |
JP5901975B2 (ja) * | 2012-01-13 | 2016-04-13 | 株式会社東芝 | 情報記録装置、及び情報記録方法 |
TWI514373B (zh) * | 2012-02-15 | 2015-12-21 | Ind Tech Res Inst | 上固定型垂直磁化穿隧磁阻元件 |
KR102017623B1 (ko) * | 2012-08-30 | 2019-09-03 | 삼성전자주식회사 | 자기 메모리 소자 |
JP6083163B2 (ja) | 2012-09-11 | 2017-02-22 | 富士電機株式会社 | 垂直磁気記録媒体およびその製造方法 |
SG11201502575TA (en) | 2012-12-06 | 2015-05-28 | Fuji Electric Co Ltd | Perpendicular magnetic recording medium |
US11810700B2 (en) * | 2018-10-30 | 2023-11-07 | Tanaka Kikinzoku Kogyo K.K. | In-plane magnetized film, in-plane magnetized film multilayer structure, hard bias layer, magnetoresistive element, and sputtering target |
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JP3434476B2 (ja) | 1999-09-29 | 2003-08-11 | 秋田県 | 高密度情報記録媒体及びその媒体の製造方法 |
JP3762277B2 (ja) * | 2000-09-29 | 2006-04-05 | キヤノン株式会社 | 磁気記録媒体及びその製造方法 |
JP2002208129A (ja) | 2000-11-09 | 2002-07-26 | Hitachi Maxell Ltd | 磁気記録媒体及びその製造方法並びに磁気記録装置 |
JP3730518B2 (ja) | 2001-01-19 | 2006-01-05 | 株式会社東芝 | 磁気記録媒体 |
JP3730906B2 (ja) | 2001-12-03 | 2006-01-05 | 日立マクセル株式会社 | 磁気記録媒体及びその製造方法並びに磁気記録装置 |
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JP2004311607A (ja) | 2003-04-04 | 2004-11-04 | Canon Inc | 磁性体、磁気記録媒体、磁気記録再生装置、情報処理装置及びその製造方法 |
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CN100510190C (zh) * | 2006-11-30 | 2009-07-08 | 复旦大学 | c轴垂直取向的L10相FePt磁记录薄膜的制备方法 |
JP2008197089A (ja) * | 2007-01-17 | 2008-08-28 | Fujikura Ltd | 磁気センサ素子及びその製造方法 |
JP5550007B2 (ja) * | 2008-12-05 | 2014-07-16 | 国立大学法人東北大学 | 磁性薄膜及びその製造方法、並びにこのような磁性薄膜を用いた各種応用デバイス |
JP2011028809A (ja) * | 2009-07-24 | 2011-02-10 | Hitachi Ltd | 磁気記録媒体 |
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- 2009-07-28 CN CN200910152089.2A patent/CN101640098B/zh active Active
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Also Published As
Publication number | Publication date |
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CN101640098B (zh) | 2013-05-29 |
JP2010034182A (ja) | 2010-02-12 |
CN101640098A (zh) | 2010-02-03 |
US20100055503A1 (en) | 2010-03-04 |
US8076012B2 (en) | 2011-12-13 |
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