DE69434550D1 - Nichtflüchtiges Halbleiterspeicherbauelement, welches die Anforderungen an dessen Spannungsfestigkeit verringert - Google Patents

Nichtflüchtiges Halbleiterspeicherbauelement, welches die Anforderungen an dessen Spannungsfestigkeit verringert

Info

Publication number: DE69434550D1
Authority: DE; Germany
Prior art keywords: requirements; reduces; memory device; semiconductor memory; volatile semiconductor
Prior art date: 1993-03-17
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE69434550T

Other languages

English (en)

Other versions

DE69434550T2 (de

Inventor

Shouichi Kawamura

Nobuaki Takashina

Yasushi Kasa

Kiyoshi Itano

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Fujitsu Semiconductor Ltd

Original Assignee

Fujitsu Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1993-03-17

Filing date

1994-01-25

Publication date

2005-12-29

1994-01-25 Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd

2005-12-29 Application granted granted Critical

2005-12-29 Publication of DE69434550D1 publication Critical patent/DE69434550D1/de

2006-03-30 Publication of DE69434550T2 publication Critical patent/DE69434550T2/de

2014-01-26 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Physics & Mathematics (AREA)
Ceramic Engineering (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Non-Volatile Memory (AREA)
Semiconductor Memories (AREA)
Read Only Memory (AREA)

DE69434550T 1993-03-17 1994-01-25 Nichtflüchtiges Halbleiterspeicherbauelement, welches die Anforderungen an dessen Spannungsfestigkeit verringert Expired - Lifetime DE69434550T2 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP5738093A JP3342730B2 (ja)	1993-03-17	1993-03-17	不揮発性半導体記憶装置
JP5738093		1993-03-17

Publications (2)

Publication Number	Publication Date
DE69434550D1 true DE69434550D1 (de)	2005-12-29
DE69434550T2 DE69434550T2 (de)	2006-03-30

Family

ID=13054004

Family Applications (2)

Application Number	Title	Priority Date	Filing Date
DE69434695T Expired - Lifetime DE69434695T2 (de)	1993-03-17	1994-01-25	Verfahren zur Herstellung einer Halbleiteranordnung
DE69434550T Expired - Lifetime DE69434550T2 (de)	1993-03-17	1994-01-25	Nichtflüchtiges Halbleiterspeicherbauelement, welches die Anforderungen an dessen Spannungsfestigkeit verringert

Family Applications Before (1)

Application Number	Title	Priority Date	Filing Date
DE69434695T Expired - Lifetime DE69434695T2 (de)	1993-03-17	1994-01-25	Verfahren zur Herstellung einer Halbleiteranordnung

Country Status (5)

Country	Link
US (2)	US5406524A (de)
EP (3)	EP0616368B1 (de)
JP (1)	JP3342730B2 (de)
KR (1)	KR970003808B1 (de)
DE (2)	DE69434695T2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3004043B2 (ja) *	1990-10-23	2000-01-31	株式会社東芝	不揮発性半導体メモリ装置
DE69232211T2 (de) *	1991-12-09	2002-06-27	Fujitsu Ltd., Kawasaki	Flash-Speicher mit besserer Löschbarkeit und dessen Schaltung
JP3406077B2 (ja) *	1994-08-26	2003-05-12	三菱電機株式会社	不揮発性半導体記憶装置
DE19526012C2 (de) *	1995-07-17	1997-09-11	Siemens Ag	Elektrisch lösch- und programmierbare nicht-flüchtige Speicherzelle
US5818758A (en) *	1996-12-31	1998-10-06	Intel Corporation	Zero voltage drop negative switch for dual well processes
JP3191861B2 (ja) *	1997-01-30	2001-07-23	日本電気株式会社	不揮発性半導体メモリ装置及びその消去方法
JPH10261946A (ja) *	1997-03-19	1998-09-29	Mitsubishi Electric Corp	半導体集積回路
US6026026A (en)	1997-12-05	2000-02-15	Hyundai Electronics America, Inc.	Self-convergence of post-erase threshold voltages in a flash memory cell using transient response
US6229732B1 (en)	1998-09-03	2001-05-08	Macronix International Co., Ltd.	Regulated voltage supply circuit for inducing tunneling current in floating gate memory devices
US6055186A (en) *	1998-10-23	2000-04-25	Macronix International Co., Ltd.	Regulated negative voltage supply circuit for floating gate memory devices
JP3540211B2 (ja)	1999-08-30	2004-07-07	Ｎｅｃエレクトロニクス株式会社	不揮発性半導体記憶装置及びそのプログラム方法
US6456554B1 (en) *	1999-10-19	2002-09-24	Texas Instruments Incorporated	Chip identifier and method of fabrication
US6639835B2 (en) *	2000-02-29	2003-10-28	Micron Technology, Inc.	Static NVRAM with ultra thin tunnel oxides
JP3633853B2 (ja)	2000-06-09	2005-03-30	Ｎｅｃエレクトロニクス株式会社	フラッシュメモリの消去動作制御方法およびフラッシュメモリの消去動作制御装置
JP3918442B2 (ja) *	2001-02-19	2007-05-23	ソニー株式会社	半導体装置及びその製造方法
US6703670B1 (en) *	2001-04-03	2004-03-09	National Semiconductor Corporation	Depletion-mode transistor that eliminates the need to separately set the threshold voltage of the depletion-mode transistor
JP4809545B2 (ja) *	2001-05-31	2011-11-09	株式会社半導体エネルギー研究所	半導体不揮発性メモリ及び電子機器
US20060170053A1 (en) *	2003-05-09	2006-08-03	Yee-Chia Yeo	Accumulation mode multiple gate transistor
US7095653B2 (en) *	2003-10-08	2006-08-22	Micron Technology, Inc.	Common wordline flash array architecture
US7149132B2 (en) *	2004-09-24	2006-12-12	Ovonyx, Inc.	Biasing circuit for use in a non-volatile memory device
JP2007013197A (ja) *	2006-08-24	2007-01-18	Renesas Technology Corp	不揮発性半導体記憶装置
JP5369413B2 (ja) *	2007-09-14	2013-12-18	富士電機株式会社	半導体装置
JP2012146033A (ja) *	2011-01-07	2012-08-02	Toshiba Corp	メモリ装置
US11145368B2 (en)	2020-01-06	2021-10-12	Microchip Technology Incorporated	Method and system for reliable and secure memory erase

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3660819A (en) *	1970-06-15	1972-05-02	Intel Corp	Floating gate transistor and method for charging and discharging same
US4072868A (en) *	1976-09-16	1978-02-07	International Business Machines Corporation	FET inverter with isolated substrate load
US4559694A (en) *	1978-09-13	1985-12-24	Hitachi, Ltd.	Method of manufacturing a reference voltage generator device
JPS56108258A (en) *	1980-02-01	1981-08-27	Seiko Instr & Electronics Ltd	Semiconductor device
US4490629A (en) *	1982-05-10	1984-12-25	American Microsystems, Inc.	High voltage circuits in low voltage CMOS process
US4573144A (en) *	1982-09-30	1986-02-25	Motorola, Inc.	Common floating gate programmable link
DE3468592D1 (en) *	1984-05-07	1988-02-11	Itt Ind Gmbh Deutsche	Semiconductor memory cell having an electrically floating memory gate
FR2576133B1 (fr) *	1985-01-15	1991-04-26	Eurotechnique Sa	Memoire en circuit integre a haute fiabilite
US4675557A (en) *	1986-03-20	1987-06-23	Motorola Inc.	CMOS voltage translator
JPS63153799A (ja) *	1986-08-08	1988-06-27	Nec Corp	半導体メモリ
JPS647557A (en) *	1987-06-29	1989-01-11	Nec Corp	Vertically stacked read-only memory
US4885719A (en) *	1987-08-19	1989-12-05	Ict International Cmos Technology, Inc.	Improved logic cell array using CMOS E2 PROM cells
JPH0695545B2 (ja) *	1988-01-07	1994-11-24	株式会社東芝	半導体集積回路
US4866307A (en) *	1988-04-20	1989-09-12	Texas Instruments Incorporated	Integrated programmable bit circuit using single-level poly construction
US5016217A (en) *	1988-05-17	1991-05-14	Ict International Cmos Technology, Inc.	Logic cell array using CMOS EPROM cells having reduced chip surface area
US4951114A (en) *	1988-12-05	1990-08-21	Raytheon Company	Complementary metal electrode semiconductor device
JP2888898B2 (ja) *	1990-02-23	1999-05-10	株式会社日立製作所	半導体集積回路
US5272368A (en) *	1991-05-10	1993-12-21	Altera Corporation	Complementary low power non-volatile reconfigurable EEcell
US5452248A (en) *	1991-06-27	1995-09-19	Kabushiki Kaisha Toshiba	Method of operating a nonvolatile semiconductor memory device

1993
- 1993-03-17 JP JP5738093A patent/JP3342730B2/ja not_active Expired - Lifetime
1994
- 1994-01-25 EP EP94101039A patent/EP0616368B1/de not_active Expired - Lifetime
- 1994-01-25 DE DE69434695T patent/DE69434695T2/de not_active Expired - Lifetime
- 1994-01-25 EP EP02002085A patent/EP1223619B1/de not_active Expired - Lifetime
- 1994-01-25 DE DE69434550T patent/DE69434550T2/de not_active Expired - Lifetime
- 1994-01-25 US US08/186,118 patent/US5406524A/en not_active Expired - Lifetime
- 1994-01-25 EP EP02002084A patent/EP1217626A1/de not_active Withdrawn
- 1994-01-31 KR KR1019940001684A patent/KR970003808B1/ko active IP Right Grant
- 1994-12-14 US US08/358,604 patent/US5581107A/en not_active Expired - Lifetime

Also Published As

Publication number	Publication date
DE69434550T2 (de)	2006-03-30
US5581107A (en)	1996-12-03
EP1223619A1 (de)	2002-07-17
EP0616368B1 (de)	2005-11-23
KR970003808B1 (ko)	1997-03-22
DE69434695T2 (de)	2006-10-05
KR940022564A (ko)	1994-10-21
JPH06275842A (ja)	1994-09-30
EP0616368A3 (de)	1998-01-21
JP3342730B2 (ja)	2002-11-11
US5406524A (en)	1995-04-11
EP1217626A1 (de)	2002-06-26
DE69434695D1 (de)	2006-05-18
EP0616368A2 (de)	1994-09-21
EP1223619B1 (de)	2006-04-05

Publication	Publication Date	Title
DE69434550D1 (de)	2005-12-29	Nichtflüchtiges Halbleiterspeicherbauelement, welches die Anforderungen an dessen Spannungsfestigkeit verringert
EP0608075A3 (en)	1995-11-02	Non-volatile semiconductor memories.
EP0606650A3 (en)	1995-09-27	Nonvolatile semiconductor memory device.
EP0665556A3 (de)	1995-10-11	Halbleiterspeicheranordnung.
EP0671745A3 (de)	1997-02-19	Halbleiterspeicheranordnung.
EP0667620A3 (de)	1996-02-07	Halbleiterspeicheranordnung.
EP0615184A3 (de)	1997-02-12	Nichtflüchtiger Speicher.
EP0618590A3 (en)	1995-11-29	Non-volatile semiconductor memory device having verify function.
EP0613151A3 (de)	1995-03-22	Halbleiterspeichersystem mit Flash-EEPROM.
EP0589597A3 (de)	1995-08-09	Nicht - flüchtiger Flash Speicher.
DE69509134D1 (de)	1999-05-20	Doppelbankspeicher und systeme, die diesen benutzen
EP0712135A3 (de)	1996-07-03	Nicht-flüchtiger Halbleiterspeicher
EP0572026A3 (de)	1995-02-15	Halbleiterspeicheranordnung.
EP0651393A3 (de)	1995-09-20	Halbleiterspeicheranordnung.
EP0600434A3 (de)	1996-06-05	Halbleiterspeicheranordnung.
EP0627741A3 (de)	1996-06-12	Halbleiterspeicheranordnung.
EP0591850A3 (de)	1994-12-21	Halbleiterspeicheranordnung.
EP0674368A3 (de)	1996-03-20	Halbleiterlaservorrichtung.
EP0606769A3 (de)	1995-03-29	Nicht-flüchtige Halbleiterspeichern.
EP0609829A3 (de)	1995-02-01	Nichtflüchtige Halbleiterspeicheranordnung und Verfahren zur Herstellung.
EP0598400A3 (de)	1995-03-29	Halbleiterspeicheranordnung.
EP0667621A3 (de)	1996-02-07	Halbleiterspeicheranordnung.
EP0618589A3 (en)	1995-11-29	Nonvolatile storage device.
EP0570977A3 (de)	1995-03-22	Halbleiterspeicheranordnung.
EP0613149A3 (de)	1995-05-10	Halbleiterspeicheranordnung.

Legal Events

Date	Code	Title	Description
2006-12-14	8364	No opposition during term of opposition
2009-04-16	8327	Change in the person/name/address of the patent owner	Owner name: FUJITSU MICROELECTRONICS LTD., TOKYO, JP
2010-11-25	8327	Change in the person/name/address of the patent owner	Owner name: FUJITSU SEMICONDUCTOR LTD., YOKOHAMA, KANAGAWA, JP
2011-02-10	8328	Change in the person/name/address of the agent	Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE