CN1391166A - 半导体存储装置 - Google Patents
半导体存储装置 Download PDFInfo
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- CN1391166A CN1391166A CN02122786.1A CN02122786A CN1391166A CN 1391166 A CN1391166 A CN 1391166A CN 02122786 A CN02122786 A CN 02122786A CN 1391166 A CN1391166 A CN 1391166A
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- Engineering & Computer Science (AREA)
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- Theoretical Computer Science (AREA)
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- Dram (AREA)
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Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP174978/2001 | 2001-06-11 | ||
JP2001174978A JP4049297B2 (ja) | 2001-06-11 | 2001-06-11 | 半導体記憶装置 |
Related Child Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200710162432.2A Division CN101131861A (zh) | 2001-06-11 | 2002-06-11 | 半导体存储装置 |
CN200710152877.2A Division CN101127238A (zh) | 2001-06-11 | 2002-06-11 | 半导体存储装置 |
CN200710162431.8A Division CN101131860B (zh) | 2001-06-11 | 2002-06-11 | 半导体存储装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1391166A true CN1391166A (zh) | 2003-01-15 |
CN100350393C CN100350393C (zh) | 2007-11-21 |
Family
ID=19016190
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200710162432.2A Pending CN101131861A (zh) | 2001-06-11 | 2002-06-11 | 半导体存储装置 |
CNB021227861A Expired - Fee Related CN100350393C (zh) | 2001-06-11 | 2002-06-11 | 半导体存储装置 |
CN200710162431.8A Expired - Fee Related CN101131860B (zh) | 2001-06-11 | 2002-06-11 | 半导体存储装置 |
CN200710152877.2A Pending CN101127238A (zh) | 2001-06-11 | 2002-06-11 | 半导体存储装置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200710162432.2A Pending CN101131861A (zh) | 2001-06-11 | 2002-06-11 | 半导体存储装置 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200710162431.8A Expired - Fee Related CN101131860B (zh) | 2001-06-11 | 2002-06-11 | 半导体存储装置 |
CN200710152877.2A Pending CN101127238A (zh) | 2001-06-11 | 2002-06-11 | 半导体存储装置 |
Country Status (5)
Country | Link |
---|---|
US (8) | US6791877B2 (zh) |
JP (1) | JP4049297B2 (zh) |
KR (8) | KR100924407B1 (zh) |
CN (4) | CN101131861A (zh) |
TW (1) | TWI278861B (zh) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100353336C (zh) * | 2003-06-27 | 2007-12-05 | 富士通株式会社 | 数据传输方法及系统 |
CN100392619C (zh) * | 2005-02-03 | 2008-06-04 | 联发科技股份有限公司 | 控制闪存存取时间的方法、闪存的存取系统及闪存控制器 |
CN101552032B (zh) * | 2008-12-12 | 2012-01-18 | 深圳市晶凯电子技术有限公司 | 用较大容量dram参与闪存介质管理构建高速固态存储盘的方法及装置 |
CN101211649B (zh) * | 2006-12-27 | 2012-10-24 | 宇瞻科技股份有限公司 | 带有固态磁盘的动态随机存取内存模块 |
CN103280444A (zh) * | 2013-04-09 | 2013-09-04 | 北京兆易创新科技股份有限公司 | 增强型Flash的多芯片的封装芯片、同步方法和封装方法 |
CN105027092A (zh) * | 2013-03-27 | 2015-11-04 | 株式会社日立制作所 | 具有sdram接口的dram、混合闪存存储器模块 |
CN105493061A (zh) * | 2013-09-03 | 2016-04-13 | 高通股份有限公司 | 用于多芯片封装上的异构存储器的统一存储器控制器 |
CN105608027A (zh) * | 2015-12-18 | 2016-05-25 | 华为技术有限公司 | 非易失存储设备和访问非易失存储设备的方法 |
CN107341071A (zh) * | 2013-08-23 | 2017-11-10 | 慧荣科技股份有限公司 | 存取快闪存储器中储存单元的方法以及使用该方法的装置 |
CN107833589A (zh) * | 2016-09-15 | 2018-03-23 | 华邦电子股份有限公司 | 非易失性半导体存储装置 |
CN107844264A (zh) * | 2016-09-20 | 2018-03-27 | 东芝存储器株式会社 | 存储器系统以及处理器系统 |
CN107845397A (zh) * | 2016-09-20 | 2018-03-27 | 株式会社东芝 | 存储器系统以及处理器系统 |
CN109582523A (zh) * | 2018-11-26 | 2019-04-05 | 深圳忆联信息系统有限公司 | 有效分析SSD前端NVMe模块性能的方法及系统 |
Families Citing this family (183)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4049297B2 (ja) * | 2001-06-11 | 2008-02-20 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
JP2003006041A (ja) * | 2001-06-20 | 2003-01-10 | Hitachi Ltd | 半導体装置 |
US7155560B2 (en) * | 2001-06-27 | 2006-12-26 | Intel Corporation | Method and apparatus for storing data in flash memory |
FI20021620A (fi) * | 2002-09-10 | 2004-03-11 | Nokia Corp | Muistirakenne, järjestelmä ja elektroniikkalaite sekä menetelmä muistipiirin yhteydessä |
JP4499982B2 (ja) * | 2002-09-11 | 2010-07-14 | 株式会社日立製作所 | メモリシステム |
WO2004049168A1 (ja) * | 2002-11-28 | 2004-06-10 | Renesas Technology Corp. | メモリモジュール、メモリシステム、及び情報機器 |
DE10255872B4 (de) * | 2002-11-29 | 2004-09-30 | Infineon Technologies Ag | Speichermodul und Verfahren zum Betrieb eines Speichermoduls in einem Datenspeichersystem |
JP4322068B2 (ja) * | 2003-03-07 | 2009-08-26 | 富士通株式会社 | ストレージシステム及びそのデイスク負荷バランス制御方法 |
JP2004318933A (ja) * | 2003-04-11 | 2004-11-11 | Renesas Technology Corp | 半導体記憶装置 |
US7606993B2 (en) | 2003-06-10 | 2009-10-20 | Tdk Corporation | Flash memory controller, memory control circuit, flash memory system, and method for controlling data exchange between host computer and flash memory |
US7752380B2 (en) * | 2003-07-31 | 2010-07-06 | Sandisk Il Ltd | SDRAM memory device with an embedded NAND flash controller |
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JP2005071234A (ja) * | 2003-08-27 | 2005-03-17 | Hitachi Ltd | 電子機器、及び、かかる電子機器におけるシステムの起動方法 |
JP2005092969A (ja) * | 2003-09-16 | 2005-04-07 | Renesas Technology Corp | 不揮発性半導体記憶装置 |
US7797693B1 (en) * | 2003-12-12 | 2010-09-14 | Hewlett-Packard Development Company, L.P. | NAND mobile devices capable of updating firmware or software in a manner analogous to NOR mobile devices |
US7173863B2 (en) * | 2004-03-08 | 2007-02-06 | Sandisk Corporation | Flash controller cache architecture |
US8250295B2 (en) | 2004-01-05 | 2012-08-21 | Smart Modular Technologies, Inc. | Multi-rank memory module that emulates a memory module having a different number of ranks |
KR100606242B1 (ko) * | 2004-01-30 | 2006-07-31 | 삼성전자주식회사 | 불휘발성 메모리와 호스트간에 버퍼링 동작을 수행하는멀티 포트 휘발성 메모리 장치, 이를 이용한 멀티-칩패키지 반도체 장치 및 이를 이용한 데이터 처리장치 |
KR101085406B1 (ko) | 2004-02-16 | 2011-11-21 | 삼성전자주식회사 | 불 휘발성 메모리를 제어하기 위한 컨트롤러 |
US20050213399A1 (en) * | 2004-03-29 | 2005-09-29 | Hoover Patricia J | Method and apparatus to write data |
US20050231080A1 (en) * | 2004-04-14 | 2005-10-20 | Edward Torrance | Cable organizer cabinet |
US7904895B1 (en) | 2004-04-21 | 2011-03-08 | Hewlett-Packard Develpment Company, L.P. | Firmware update in electronic devices employing update agent in a flash memory card |
US7725665B2 (en) * | 2004-06-30 | 2010-05-25 | Renesas Technology Corp. | Data processor |
US8526940B1 (en) | 2004-08-17 | 2013-09-03 | Palm, Inc. | Centralized rules repository for smart phone customer care |
JP5007485B2 (ja) * | 2004-08-26 | 2012-08-22 | ソニー株式会社 | 半導体記憶装置およびそのアクセス方法、並びにメモリ制御システム |
US7158410B2 (en) * | 2004-08-27 | 2007-01-02 | Micron Technology, Inc. | Integrated DRAM-NVRAM multi-level memory |
JP2008511929A (ja) * | 2004-08-30 | 2008-04-17 | シリコン ストレージ テクノロジー、 インク. | 携帯電話の不揮発性メモリを管理するシステムおよび方法 |
US7882299B2 (en) * | 2004-12-21 | 2011-02-01 | Sandisk Corporation | System and method for use of on-chip non-volatile memory write cache |
US7424663B2 (en) * | 2005-01-19 | 2008-09-09 | Intel Corporation | Lowering voltage for cache memory operation |
KR100640555B1 (ko) | 2005-02-07 | 2006-10-31 | 삼성전자주식회사 | 데이터 복사 방법 및 이를 위한 어플리케이션 프로세서 |
US7623355B2 (en) * | 2005-03-07 | 2009-11-24 | Smart Modular Technologies, Inc. | Extended universal serial bus connectivity |
US7702839B2 (en) * | 2005-04-12 | 2010-04-20 | Nokia Corporation | Memory interface for volatile and non-volatile memory devices |
JP2006323739A (ja) | 2005-05-20 | 2006-11-30 | Renesas Technology Corp | メモリモジュール、メモリシステム、及び情報機器 |
US8041881B2 (en) | 2006-07-31 | 2011-10-18 | Google Inc. | Memory device with emulated characteristics |
US7392338B2 (en) | 2006-07-31 | 2008-06-24 | Metaram, Inc. | Interface circuit system and method for autonomously performing power management operations in conjunction with a plurality of memory circuits |
US8397013B1 (en) | 2006-10-05 | 2013-03-12 | Google Inc. | Hybrid memory module |
US20080082763A1 (en) | 2006-10-02 | 2008-04-03 | Metaram, Inc. | Apparatus and method for power management of memory circuits by a system or component thereof |
US8335894B1 (en) | 2008-07-25 | 2012-12-18 | Google Inc. | Configurable memory system with interface circuit |
US10013371B2 (en) | 2005-06-24 | 2018-07-03 | Google Llc | Configurable memory circuit system and method |
US8438328B2 (en) | 2008-02-21 | 2013-05-07 | Google Inc. | Emulation of abstracted DIMMs using abstracted DRAMs |
US8081474B1 (en) | 2007-12-18 | 2011-12-20 | Google Inc. | Embossed heat spreader |
US20080028136A1 (en) | 2006-07-31 | 2008-01-31 | Schakel Keith R | Method and apparatus for refresh management of memory modules |
US8060774B2 (en) | 2005-06-24 | 2011-11-15 | Google Inc. | Memory systems and memory modules |
US8111566B1 (en) | 2007-11-16 | 2012-02-07 | Google, Inc. | Optimal channel design for memory devices for providing a high-speed memory interface |
US9542352B2 (en) | 2006-02-09 | 2017-01-10 | Google Inc. | System and method for reducing command scheduling constraints of memory circuits |
US8090897B2 (en) | 2006-07-31 | 2012-01-03 | Google Inc. | System and method for simulating an aspect of a memory circuit |
US8386722B1 (en) | 2008-06-23 | 2013-02-26 | Google Inc. | Stacked DIMM memory interface |
US8359187B2 (en) | 2005-06-24 | 2013-01-22 | Google Inc. | Simulating a different number of memory circuit devices |
US8055833B2 (en) | 2006-10-05 | 2011-11-08 | Google Inc. | System and method for increasing capacity, performance, and flexibility of flash storage |
US8077535B2 (en) | 2006-07-31 | 2011-12-13 | Google Inc. | Memory refresh apparatus and method |
US9507739B2 (en) | 2005-06-24 | 2016-11-29 | Google Inc. | Configurable memory circuit system and method |
US8244971B2 (en) | 2006-07-31 | 2012-08-14 | Google Inc. | Memory circuit system and method |
US7590796B2 (en) * | 2006-07-31 | 2009-09-15 | Metaram, Inc. | System and method for power management in memory systems |
US8796830B1 (en) | 2006-09-01 | 2014-08-05 | Google Inc. | Stackable low-profile lead frame package |
US8089795B2 (en) | 2006-02-09 | 2012-01-03 | Google Inc. | Memory module with memory stack and interface with enhanced capabilities |
US7386656B2 (en) | 2006-07-31 | 2008-06-10 | Metaram, Inc. | Interface circuit system and method for performing power management operations in conjunction with only a portion of a memory circuit |
US8327104B2 (en) | 2006-07-31 | 2012-12-04 | Google Inc. | Adjusting the timing of signals associated with a memory system |
US8130560B1 (en) | 2006-11-13 | 2012-03-06 | Google Inc. | Multi-rank partial width memory modules |
US9171585B2 (en) | 2005-06-24 | 2015-10-27 | Google Inc. | Configurable memory circuit system and method |
US8015606B1 (en) | 2005-07-14 | 2011-09-06 | Ironkey, Inc. | Storage device with website trust indication |
US8321953B2 (en) * | 2005-07-14 | 2012-11-27 | Imation Corp. | Secure storage device with offline code entry |
US8335920B2 (en) | 2005-07-14 | 2012-12-18 | Imation Corp. | Recovery of data access for a locked secure storage device |
US8505075B2 (en) * | 2005-07-14 | 2013-08-06 | Marble Security, Inc. | Enterprise device recovery |
US8438647B2 (en) * | 2005-07-14 | 2013-05-07 | Imation Corp. | Recovery of encrypted data from a secure storage device |
US7345918B2 (en) * | 2005-08-31 | 2008-03-18 | Micron Technology, Inc. | Selective threshold voltage verification and compaction |
JP5242397B2 (ja) | 2005-09-02 | 2013-07-24 | メタラム インコーポレイテッド | Dramをスタックする方法及び装置 |
US20070067620A1 (en) * | 2005-09-06 | 2007-03-22 | Ironkey, Inc. | Systems and methods for third-party authentication |
KR100673013B1 (ko) * | 2005-09-21 | 2007-01-24 | 삼성전자주식회사 | 메모리 컨트롤러 및 그것을 포함한 데이터 처리 시스템 |
KR100737913B1 (ko) * | 2005-10-04 | 2007-07-10 | 삼성전자주식회사 | 반도체 메모리 장치의 읽기 방법 |
JP2007164893A (ja) | 2005-12-13 | 2007-06-28 | Toshiba Corp | 半導体記憶装置 |
US8266378B1 (en) | 2005-12-22 | 2012-09-11 | Imation Corp. | Storage device with accessible partitions |
US8639873B1 (en) * | 2005-12-22 | 2014-01-28 | Imation Corp. | Detachable storage device with RAM cache |
US20070147115A1 (en) * | 2005-12-28 | 2007-06-28 | Fong-Long Lin | Unified memory and controller |
US7519754B2 (en) * | 2005-12-28 | 2009-04-14 | Silicon Storage Technology, Inc. | Hard disk drive cache memory and playback device |
US9632929B2 (en) | 2006-02-09 | 2017-04-25 | Google Inc. | Translating an address associated with a command communicated between a system and memory circuits |
KR100775710B1 (ko) | 2006-02-28 | 2007-11-09 | 주식회사 대우일렉트로닉스 | 전자기기의 이이피롬 데이터 처리 시스템 및 방법 |
JP5065618B2 (ja) * | 2006-05-16 | 2012-11-07 | 株式会社日立製作所 | メモリモジュール |
JP2007323321A (ja) * | 2006-05-31 | 2007-12-13 | Toshiba Corp | 半導体記憶装置およびそのデータ送信方法 |
US8209676B2 (en) | 2006-06-08 | 2012-06-26 | Hewlett-Packard Development Company, L.P. | Device management in a network |
WO2008014454A2 (en) | 2006-07-27 | 2008-01-31 | Hewlett-Packard Development Company, L.P. | User experience and dependency management in a mobile device |
US7724589B2 (en) | 2006-07-31 | 2010-05-25 | Google Inc. | System and method for delaying a signal communicated from a system to at least one of a plurality of memory circuits |
JP2008047244A (ja) * | 2006-08-18 | 2008-02-28 | Toshiba Corp | 半導体記憶装置、半導体装置、及びデータ書き込み方法 |
JP2008077810A (ja) * | 2006-09-25 | 2008-04-03 | Toshiba Corp | 不揮発性半導体記憶装置 |
KR20080029687A (ko) * | 2006-09-29 | 2008-04-03 | 한국전자통신연구원 | 암호화 기능이 내장된 메모리를 이용한 고속 대용량의암호화 장치 및 그 구현 방법 |
US7584335B2 (en) * | 2006-11-02 | 2009-09-01 | International Business Machines Corporation | Methods and arrangements for hybrid data storage |
US8745315B2 (en) * | 2006-11-06 | 2014-06-03 | Rambus Inc. | Memory Systems and methods supporting volatile and wear-leveled nonvolatile physical memory |
US7564722B2 (en) * | 2007-01-22 | 2009-07-21 | Micron Technology, Inc. | Memory system and method having volatile and non-volatile memory devices at same hierarchical level |
KR100816154B1 (ko) * | 2007-01-23 | 2008-03-21 | 주식회사 하이닉스반도체 | 플래시 메모리 소자의 어드레스 스케쥴링 방법 |
KR100875293B1 (ko) | 2007-02-08 | 2008-12-23 | 삼성전자주식회사 | 시스템 성능을 향상시킬 수 있는 플래시 메모리 시스템 |
KR100866624B1 (ko) | 2007-02-23 | 2008-11-03 | 삼성전자주식회사 | 둘 이상의 비휘발성 메모리 장치들을 제어하는 방법 및 그장치 |
US9195602B2 (en) | 2007-03-30 | 2015-11-24 | Rambus Inc. | System including hierarchical memory modules having different types of integrated circuit memory devices |
JP5669338B2 (ja) | 2007-04-26 | 2015-02-12 | 株式会社日立製作所 | 半導体装置 |
US8819384B1 (en) * | 2007-05-17 | 2014-08-26 | Marvell International Ltd. | Method and system for embedded virtual memory management |
KR100909965B1 (ko) | 2007-05-23 | 2009-07-29 | 삼성전자주식회사 | 버스를 공유하는 휘발성 메모리 및 불휘발성 메모리를구비하는 반도체 메모리 시스템 및 불휘발성 메모리의 동작제어 방법 |
US8301833B1 (en) | 2007-06-01 | 2012-10-30 | Netlist, Inc. | Non-volatile memory module |
US8874831B2 (en) | 2007-06-01 | 2014-10-28 | Netlist, Inc. | Flash-DRAM hybrid memory module |
US8904098B2 (en) | 2007-06-01 | 2014-12-02 | Netlist, Inc. | Redundant backup using non-volatile memory |
JP2008305350A (ja) * | 2007-06-11 | 2008-12-18 | Spansion Llc | メモリシステム、メモリ装置、およびメモリ装置の制御方法 |
US7986553B2 (en) * | 2007-06-15 | 2011-07-26 | Micron Technology, Inc. | Programming of a solid state memory utilizing analog communication of bit patterns |
US8209479B2 (en) | 2007-07-18 | 2012-06-26 | Google Inc. | Memory circuit system and method |
JP4922860B2 (ja) * | 2007-08-01 | 2012-04-25 | 株式会社日立製作所 | 半導体装置 |
US8080874B1 (en) | 2007-09-14 | 2011-12-20 | Google Inc. | Providing additional space between an integrated circuit and a circuit board for positioning a component therebetween |
JP4525816B2 (ja) * | 2007-09-28 | 2010-08-18 | 株式会社デンソー | 電子機器及びプログラム |
US7593284B2 (en) * | 2007-10-17 | 2009-09-22 | Unity Semiconductor Corporation | Memory emulation using resistivity-sensitive memory |
US8200932B2 (en) * | 2007-10-19 | 2012-06-12 | Virident Systems Inc. | Managing memory systems containing components with asymmetric characteristics |
US8332572B2 (en) * | 2008-02-05 | 2012-12-11 | Spansion Llc | Wear leveling mechanism using a DRAM buffer |
US8275945B2 (en) * | 2008-02-05 | 2012-09-25 | Spansion Llc | Mitigation of flash memory latency and bandwidth limitations via a write activity log and buffer |
US8352671B2 (en) * | 2008-02-05 | 2013-01-08 | Spansion Llc | Partial allocate paging mechanism using a controller and a buffer |
US8209463B2 (en) * | 2008-02-05 | 2012-06-26 | Spansion Llc | Expansion slots for flash memory based random access memory subsystem |
KR101529291B1 (ko) * | 2008-02-27 | 2015-06-17 | 삼성전자주식회사 | 플래시 메모리 장치 및 그것을 포함한 플래시 메모리시스템 |
JP2009211153A (ja) * | 2008-02-29 | 2009-09-17 | Toshiba Corp | メモリ装置、情報処理装置及び電力制御方法 |
US8745311B2 (en) * | 2008-03-31 | 2014-06-03 | Spansion Llc | Flash memory usability enhancements in main memory application |
US8738840B2 (en) * | 2008-03-31 | 2014-05-27 | Spansion Llc | Operating system based DRAM/FLASH management scheme |
JP4762267B2 (ja) * | 2008-04-21 | 2011-08-31 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
US20100146239A1 (en) * | 2008-12-08 | 2010-06-10 | Infinite Memories Ltd. | Continuous address space in non-volatile-memories (nvm) using efficient embedded management of array deficiencies |
US7864620B1 (en) * | 2009-03-19 | 2011-01-04 | Altera Corporation | Partially reconfigurable memory cell arrays |
EP2441007A1 (en) | 2009-06-09 | 2012-04-18 | Google, Inc. | Programming of dimm termination resistance values |
CN101615145B (zh) * | 2009-07-24 | 2011-12-07 | 中兴通讯股份有限公司 | 一种提高存储器数据缓存可靠性的方法和装置 |
US8180500B2 (en) * | 2009-07-29 | 2012-05-15 | Nanya Technology Corp. | Temperature sensing system and related temperature sensing method |
US8683088B2 (en) | 2009-08-06 | 2014-03-25 | Imation Corp. | Peripheral device data integrity |
US8745365B2 (en) * | 2009-08-06 | 2014-06-03 | Imation Corp. | Method and system for secure booting a computer by booting a first operating system from a secure peripheral device and launching a second operating system stored a secure area in the secure peripheral device on the first operating system |
US8402203B2 (en) * | 2009-12-31 | 2013-03-19 | Seagate Technology Llc | Systems and methods for storing data in a multi-level cell solid state storage device |
CN101894584B (zh) * | 2010-06-12 | 2013-01-16 | 苏州国芯科技有限公司 | 一种动态随机存储器读写模式信号时序参数的实现方法 |
US8793419B1 (en) * | 2010-11-22 | 2014-07-29 | Sk Hynix Memory Solutions Inc. | Interface between multiple controllers |
EP3778642A1 (en) | 2010-12-27 | 2021-02-17 | Apo-T B.V. | A polypeptide that binds aberrant cells and induces apoptosis |
KR20120079682A (ko) * | 2011-01-05 | 2012-07-13 | 삼성전자주식회사 | 디램 캐시를 포함하는 메모리 장치 및 이를 포함하는 시스템 |
US8578208B2 (en) * | 2011-01-13 | 2013-11-05 | Micron Technology, Inc. | Determining location of error detection data |
KR20120118763A (ko) * | 2011-04-19 | 2012-10-29 | 삼성전자주식회사 | 디램 패키지, 디램 패키지를 포함하는 디램 모듈, 디램 패키지를 포함하는 그래픽 모듈, 그리고 디램 패키지를 포함하는 멀티미디어 장치 |
US8913447B2 (en) * | 2011-06-24 | 2014-12-16 | Micron Technology, Inc. | Method and apparatus for memory command input and control |
US10380022B2 (en) | 2011-07-28 | 2019-08-13 | Netlist, Inc. | Hybrid memory module and system and method of operating the same |
US10838646B2 (en) | 2011-07-28 | 2020-11-17 | Netlist, Inc. | Method and apparatus for presearching stored data |
US10198350B2 (en) | 2011-07-28 | 2019-02-05 | Netlist, Inc. | Memory module having volatile and non-volatile memory subsystems and method of operation |
US8423722B1 (en) * | 2011-08-26 | 2013-04-16 | Western Digital Technologies, Inc. | System and method for high performance command processing in solid state drives |
EP2760892A1 (en) | 2011-09-29 | 2014-08-06 | Apo-T B.V. | Multi-specific binding molecules targeting aberrant cells |
AU2013208364B2 (en) | 2012-01-13 | 2017-10-26 | Apo-T B.V. | Aberrant cell-restricted immunoglobulins provided with a toxic moiety |
TWI483107B (zh) * | 2012-04-03 | 2015-05-01 | Winbond Electronics Corp | 串列介面快閃記憶體裝置及其狀態暫存器的寫入方法 |
US9064603B1 (en) | 2012-11-28 | 2015-06-23 | Samsung Electronics Co., Ltd. | Semiconductor memory device and memory system including the same |
US9047172B2 (en) | 2012-11-29 | 2015-06-02 | Intel Corporation | Adaptive power control of memory map storage devices |
KR20140082181A (ko) * | 2012-12-24 | 2014-07-02 | 에스케이하이닉스 주식회사 | 메모리 시스템 |
US10372551B2 (en) | 2013-03-15 | 2019-08-06 | Netlist, Inc. | Hybrid memory system with configurable error thresholds and failure analysis capability |
WO2014155592A1 (ja) * | 2013-03-27 | 2014-10-02 | 株式会社日立製作所 | Sdramインターフェイスを有するdram、フラッシュメモリ混載メモリモジュール |
US9436600B2 (en) | 2013-06-11 | 2016-09-06 | Svic No. 28 New Technology Business Investment L.L.P. | Non-volatile memory storage for multi-channel memory system |
US9858181B2 (en) * | 2013-06-20 | 2018-01-02 | Hitachi, Ltd. | Memory module having different types of memory mounted together thereon, and information processing device having memory module mounted therein |
WO2015026826A1 (en) * | 2013-08-21 | 2015-02-26 | Everspin Technologies, Inc. | Non-destructive write/read leveling |
CN104425018B (zh) * | 2013-08-23 | 2019-07-23 | 慧荣科技股份有限公司 | 存取快闪存储器中储存单元的方法以及使用该方法的装置 |
CN108447516B (zh) * | 2013-08-23 | 2020-04-24 | 慧荣科技股份有限公司 | 存取快闪存储器中存储单元的方法以及使用该方法的装置 |
TWI588843B (zh) * | 2013-08-23 | 2017-06-21 | 慧榮科技股份有限公司 | 存取快閃記憶體中儲存單元的方法以及使用該方法的裝置 |
US10193377B2 (en) * | 2013-10-30 | 2019-01-29 | Samsung Electronics Co., Ltd. | Semiconductor energy harvest and storage system for charging an energy storage device and powering a controller and multi-sensor memory module |
US10248328B2 (en) | 2013-11-07 | 2019-04-02 | Netlist, Inc. | Direct data move between DRAM and storage on a memory module |
KR102249416B1 (ko) | 2014-06-11 | 2021-05-07 | 삼성전자주식회사 | 메모리 시스템 및 메모리 시스템의 구동 방법 |
KR102291639B1 (ko) * | 2015-07-13 | 2021-08-20 | 에스케이하이닉스 주식회사 | 레디 비지 신호를 출력하는 반도체 메모리 장치 및 그것을 포함하는 메모리 시스템 |
KR102430561B1 (ko) * | 2015-09-11 | 2022-08-09 | 삼성전자주식회사 | 듀얼 포트 디램을 포함하는 메모리 모듈 |
KR102373544B1 (ko) | 2015-11-06 | 2022-03-11 | 삼성전자주식회사 | 요청 기반의 리프레쉬를 수행하는 메모리 장치, 메모리 시스템 및 메모리 장치의 동작방법 |
US9880778B2 (en) | 2015-11-09 | 2018-01-30 | Google Inc. | Memory devices and methods |
KR102473209B1 (ko) * | 2015-12-14 | 2022-12-02 | 삼성전자주식회사 | 스토리지 장치 및 스토리지 장치의 동작 방법 |
US10296238B2 (en) * | 2015-12-18 | 2019-05-21 | Intel Corporation | Technologies for contemporaneous access of non-volatile and volatile memory in a memory device |
US9847105B2 (en) * | 2016-02-01 | 2017-12-19 | Samsung Electric Co., Ltd. | Memory package, memory module including the same, and operation method of memory package |
US10209895B2 (en) * | 2016-02-18 | 2019-02-19 | Toshiba Memory Corporation | Memory system |
US9965017B2 (en) | 2016-04-12 | 2018-05-08 | International Business Machines Corporation | System and method for conserving energy in non-volatile dual inline memory modules |
US10181346B2 (en) | 2016-08-02 | 2019-01-15 | SK Hynix Inc. | Semiconductor devices and operations thereof |
US11217286B2 (en) | 2016-06-27 | 2022-01-04 | SK Hynix Inc. | Semiconductor memory device with power down operation |
US11133042B2 (en) | 2016-06-27 | 2021-09-28 | SK Hynix Inc. | Semiconductor memory system and semiconductor memory device, which can be remotely initialized |
KR102592359B1 (ko) | 2016-06-27 | 2023-10-20 | 에스케이하이닉스 주식회사 | 반도체장치 |
US10037788B2 (en) * | 2016-08-02 | 2018-07-31 | SK Hynix Inc. | Semiconductor devices and semiconductor systems |
US9934841B1 (en) | 2016-10-21 | 2018-04-03 | Altera Corporation | Systems and methods for refreshing data in memory circuits |
CN108121664A (zh) * | 2016-11-28 | 2018-06-05 | 慧荣科技股份有限公司 | 数据储存装置以及其操作方法 |
US9865323B1 (en) * | 2016-12-07 | 2018-01-09 | Toshiba Memory Corporation | Memory device including volatile memory, nonvolatile memory and controller |
US10147712B1 (en) * | 2017-07-21 | 2018-12-04 | Micron Technology, Inc. | Memory device with a multiplexed command/address bus |
US10395722B2 (en) * | 2017-09-29 | 2019-08-27 | Intel Corporation | Reading from a mode register having different read and write timing |
EP3732712A4 (en) | 2017-12-29 | 2021-09-01 | Intel Corporation | MICROELECTRONIC ARRANGEMENTS WITH COMMUNICATION NETWORKS |
US11030132B2 (en) * | 2018-02-05 | 2021-06-08 | Micron Technology, Inc. | Synchronous memory bus access to storage media |
US11226909B2 (en) | 2018-08-24 | 2022-01-18 | Rambus Inc. | DRAM interface mode with interruptible internal transfer operation |
KR102653251B1 (ko) * | 2018-09-07 | 2024-04-01 | 에스케이하이닉스 주식회사 | 고속 데이터 리드아웃 장치 및 그를 이용한 씨모스 이미지 센서 |
CN111312319B (zh) * | 2018-12-12 | 2022-03-01 | 北京兆易创新科技股份有限公司 | 一种数据替换的方法以及装置 |
US11301403B2 (en) * | 2019-03-01 | 2022-04-12 | Micron Technology, Inc. | Command bus in memory |
JP2020154525A (ja) * | 2019-03-19 | 2020-09-24 | キオクシア株式会社 | メモリシステムおよび情報処理システム |
US12113054B2 (en) | 2019-10-21 | 2024-10-08 | Adeia Semiconductor Technologies Llc | Non-volatile dynamic random access memory |
TWI768693B (zh) * | 2020-03-02 | 2022-06-21 | 慧榮科技股份有限公司 | 用以進行全快閃記憶體陣列伺服器的資料存取管理的方法與設備 |
US11409684B2 (en) | 2020-07-31 | 2022-08-09 | Alibaba Group Holding Limited | Processing accelerator architectures |
US11625341B2 (en) | 2020-08-11 | 2023-04-11 | Alibaba Group Holding Limited | Narrow DRAM channel systems and methods |
US11929130B2 (en) * | 2020-09-30 | 2024-03-12 | Changxin Memory Technologies, Inc. | Method and device for testing sr cycle as well as method and device for testing ar number |
KR20230050612A (ko) | 2021-10-08 | 2023-04-17 | 삼성전자주식회사 | 로그 정보를 제공하는 반도체 메모리 장치 |
CN114360599A (zh) * | 2022-01-13 | 2022-04-15 | 超存极光(上海)半导体有限公司 | 一种sdram私有数据的读写方法 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0251724A (ja) | 1988-08-15 | 1990-02-21 | Hitachi Ltd | ディスク制御装置 |
US5315549A (en) * | 1991-06-11 | 1994-05-24 | Dallas Semiconductor Corporation | Memory controller for nonvolatile RAM operation, systems and methods |
JPH0546328A (ja) | 1991-08-13 | 1993-02-26 | Fujitsu Ltd | 半導体記憶装置のステージング方法 |
TW231343B (zh) * | 1992-03-17 | 1994-10-01 | Hitachi Seisakusyo Kk | |
JPH05299616A (ja) * | 1992-04-16 | 1993-11-12 | Hitachi Ltd | 半導体記憶装置 |
JPH06195258A (ja) * | 1992-07-08 | 1994-07-15 | Nec Corp | 半導体記憶装置 |
AU664912B2 (en) * | 1992-09-02 | 1995-12-07 | Dainippon Pharmaceutical Co. Ltd. | Novel 3-oxadiazolyl-1,6-naphthyridine derivatives |
ZA936048B (en) * | 1992-09-02 | 1994-03-15 | Dainippon Pharmaceutical Co | Novel 3-oxadiazolyl-1,6-napthyridine derivatives |
JPH0799512B2 (ja) * | 1992-11-18 | 1995-10-25 | インターナショナル・ビジネス・マシーンズ・コーポレイション | プログラム可能な外部記憶制御装置 |
JPH06215589A (ja) | 1993-01-18 | 1994-08-05 | Hitachi Ltd | 半導体メモリ |
KR970008188B1 (ko) | 1993-04-08 | 1997-05-21 | 가부시끼가이샤 히다찌세이사꾸쇼 | 플래시메모리의 제어방법 및 그것을 사용한 정보처리장치 |
JPH07146820A (ja) | 1993-04-08 | 1995-06-06 | Hitachi Ltd | フラッシュメモリの制御方法及び、それを用いた情報処理装置 |
US5650976A (en) | 1993-05-14 | 1997-07-22 | Micron Technology, Inc. | Dual strobed negative pumped wordlines for dynamic random access memories |
JPH0729386A (ja) * | 1993-07-13 | 1995-01-31 | Hitachi Ltd | フラッシュメモリ及びマイクロコンピュータ |
US5974513A (en) * | 1993-11-04 | 1999-10-26 | Hitachi Maxell, Ltd. | IC memory card having read/write inhibit capabilities |
US5666516A (en) * | 1993-12-16 | 1997-09-09 | International Business Machines Corporation | Protected programmable memory cartridge having selective access circuitry |
US5696917A (en) | 1994-06-03 | 1997-12-09 | Intel Corporation | Method and apparatus for performing burst read operations in an asynchronous nonvolatile memory |
JPH08129509A (ja) | 1994-11-01 | 1996-05-21 | Canon Inc | メモリ制御装置及び方法 |
US5654746A (en) | 1994-12-01 | 1997-08-05 | Scientific-Atlanta, Inc. | Secure authorization and control method and apparatus for a game delivery service |
JPH1011348A (ja) | 1996-06-24 | 1998-01-16 | Ricoh Co Ltd | Dramの制御装置およびそのdram |
JPH10134008A (ja) * | 1996-11-05 | 1998-05-22 | Mitsubishi Electric Corp | 半導体装置およびコンピュータシステム |
JPH10269109A (ja) * | 1997-03-21 | 1998-10-09 | Mitsubishi Electric Corp | マイクロコンピュータ |
JP4229482B2 (ja) * | 1997-10-24 | 2009-02-25 | 株式会社ルネサステクノロジ | フラッシュメモリ内蔵マイクロコンピュータ |
KR100266899B1 (ko) * | 1997-12-26 | 2000-10-02 | 윤종용 | 동기형 메모리 장치 |
JP4146006B2 (ja) * | 1998-09-28 | 2008-09-03 | 富士通株式会社 | フラッシュメモリを有する電子機器 |
US6324103B2 (en) * | 1998-11-11 | 2001-11-27 | Hitachi, Ltd. | Semiconductor integrated circuit device, memory module, storage device and the method for repairing semiconductor integrated circuit device |
JP2001005723A (ja) | 1999-06-21 | 2001-01-12 | Mitsubishi Electric Corp | 半導体記憶装置およびそれを用いたメモリシステム |
JP4017177B2 (ja) | 2001-02-28 | 2007-12-05 | スパンション エルエルシー | メモリ装置 |
JP2002312232A (ja) | 2001-04-10 | 2002-10-25 | Mitsubishi Electric Corp | 半導体記憶装置 |
JP4049297B2 (ja) * | 2001-06-11 | 2008-02-20 | 株式会社ルネサステクノロジ | 半導体記憶装置 |
-
2001
- 2001-06-11 JP JP2001174978A patent/JP4049297B2/ja not_active Expired - Fee Related
-
2002
- 2002-04-11 TW TW091107320A patent/TWI278861B/zh not_active IP Right Cessation
- 2002-06-10 US US10/164,905 patent/US6791877B2/en not_active Expired - Lifetime
- 2002-06-10 KR KR1020020032287A patent/KR100924407B1/ko not_active IP Right Cessation
- 2002-06-11 CN CN200710162432.2A patent/CN101131861A/zh active Pending
- 2002-06-11 CN CNB021227861A patent/CN100350393C/zh not_active Expired - Fee Related
- 2002-06-11 CN CN200710162431.8A patent/CN101131860B/zh not_active Expired - Fee Related
- 2002-06-11 CN CN200710152877.2A patent/CN101127238A/zh active Pending
-
2004
- 2004-06-07 US US10/861,452 patent/US6952368B2/en not_active Expired - Lifetime
-
2005
- 2005-06-13 US US11/152,526 patent/US7068562B2/en not_active Expired - Lifetime
-
2006
- 2006-05-24 US US11/439,139 patent/US7280426B2/en not_active Expired - Fee Related
-
2007
- 2007-05-08 US US11/797,882 patent/US7554830B2/en not_active Expired - Fee Related
-
2008
- 2008-11-28 KR KR1020080119992A patent/KR100924408B1/ko not_active IP Right Cessation
-
2009
- 2009-04-08 KR KR1020090030489A patent/KR100928364B1/ko not_active IP Right Cessation
- 2009-05-21 US US12/454,645 patent/US7872895B2/en not_active Expired - Fee Related
- 2009-12-30 KR KR1020090133978A patent/KR100990299B1/ko not_active IP Right Cessation
-
2010
- 2010-05-26 KR KR1020100049276A patent/KR101050898B1/ko active IP Right Grant
- 2010-12-06 US US12/926,706 patent/US8432716B2/en not_active Expired - Fee Related
-
2011
- 2011-02-25 KR KR1020110017202A patent/KR101151085B1/ko not_active IP Right Cessation
- 2011-10-13 KR KR1020110104400A patent/KR20110128761A/ko not_active Application Discontinuation
-
2012
- 2012-04-26 KR KR1020120043686A patent/KR20120054000A/ko active Search and Examination
- 2012-11-12 US US13/674,448 patent/US20130145081A1/en not_active Abandoned
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