CN102348332B - 电路装置及其制造方法 - Google Patents
电路装置及其制造方法 Download PDFInfo
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- CN102348332B CN102348332B CN201110204479.7A CN201110204479A CN102348332B CN 102348332 B CN102348332 B CN 102348332B CN 201110204479 A CN201110204479 A CN 201110204479A CN 102348332 B CN102348332 B CN 102348332B
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Classifications
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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Abstract
本发明公开了一种电路装置及其制造方法。在现有的电路装置中存在着如下问题,即难以将配置在电路基板上的电路元件等所产生的热量向树脂密封体的外部释放。在本发明的电路装置(1)中,电路基板(4)的下表面侧及侧表面的一部分被第二树脂密封体(2B)覆盖,电路基板(4)的上表面侧等被第一树脂密封体(2A)覆盖。因为电路装置(1)向外部的散热主要经由第二树脂密封体(2B)进行,所以使第二树脂密封体(2B)所含有的填料粒径大于第一树脂密封体(2A)所含有的填料粒径,可以大幅提高电路装置(1)向外部的散热性。
Description
技术领域
本发明涉及提高树脂封装的散热性的电路装置及其制造方法。
背景技术
作为现有的电路装置的制造方法的一个实施例,已知下述的制造方法。如图9(A)所示,准备由Al基板等金属基板构成的电路装置71,在电路基板71的上表面形成具有绝缘性的树脂层72及导电图案73。然后,在导电图案73上电连接电路元件74及引线75,在电路基板71上形成混合集成电路。之后,在树脂密封模具76的型腔77内配置电路基板71,由上模78和下模79夹住引线75,由此在型腔77内固定电路基板71。
如图9(B)所示,经由树脂密封模具76的浇口部80,向型腔77内注入树脂。此时,按照箭头81所示,注入的树脂首先碰撞到电路基板71的侧表面,按照箭头81A及81B所示,树脂流入电路基板71的下表面侧及上表面侧。然后,通过在电路基板71的下表面端部设置曲面82,使树脂有效地流入电路基板71的下表面侧。电路基板71下表面的树脂密封体的厚度例如为0.5mm左右,但通过前述的树脂注入方法,可以实现对该狭窄间隙填充树脂(例如,参照专利文献1)。
还有,作为现有电路装置的一个实施例,已知下述的结构。如图10所示,电路装置91在电路基板92的上表面构筑由导电图案93和电路元件94构成的混合集成电路,由树脂密封体95整体覆盖电路基板92的上表面、侧表面及下表面。树脂密封体95由利用传递模塑法所形成的第一树脂密封体95A和将固体的树脂片熔化而形成的第二树脂密封体95B构成。需要说明的是,如图所示,与电路基板92上表面的导电图案93电连接的引线96,从树脂密封体95的侧表面向树脂密封体95的外部引出(例如,参照专利文献2)
专利文献1:(日本)特开2003-17515号公报(第6-9页、第8-9图)
专利文献2:(日本)特开2010-67852号公报(第4-10页、第1-4图)
首先,在利用图9(A)及(B)说明的制造方法中,从树脂密封模具76的浇口部80注入的树脂碰撞到电路基板71的侧表面,并且通过在电路基板71上形成的曲面82,便于在电路基板71的下表面的狭窄区域填充树脂。为了防止在电路基板71的下表面的狭窄区域存在未填充区域,该狭窄区域需要具有一定的厚度,以便于使树脂流动,这样就导致存在难以实现电路基板71下表面的树脂密封体厚度的薄膜化,从而难以提高树脂密封体的散热性的问题。
为了特别解决该散热性的问题,可以考虑增大密封用树脂内的填料的含有率以及增大该填料的粒径。然而,增大填料的含有率以及增大该填料的粒径,导致出现使树脂的流动性恶化,在电路基板51的下表面易存在未填充区域的新问题。并且,就所使用的填料的材料及形状而言,在利用一种树脂整体密封整个电路基板71的制造方法中,还存在电路元件损坏、金属细线断线等问题,存在该填料的材料及形状被限定的问题。
接着,在利用图10说明的电路装置91中,虽然防止了电路装置92的下表面存在未填充区域,实现了树脂密封体的薄型化,但是,关于进一步提高散热性的结构方面却完全没有明示。
另外,由圆形标记97所表示的区域表示第一树脂密封体95A和第二树脂密封体95B的重合区域,如图所示,第二树脂密封体95B以覆盖电路基板92的下端部的程度一直形成到电路基板92的侧面。与第一树脂密封体95A及第二树脂密封体95B的单体区域相比,该重合区域的耐压特性容易变差。因此,将重合区域配置在电路基板92的下表面或电路基板的侧面下方,会导致存在经由重合区域电路基板92短路的问题。
再有,为提高电路装置91的散热性,通过实现第二树脂密封体95B的薄膜化,树脂密封体95中所占的第一树脂密封体95A的膜厚相对地变厚。因此,在树脂密封模具内将第一树脂密封体95A加热硬化时,存在由于第一树脂密封体的收缩力而使电路基板91容易上翘的问题。
发明内容
本发明鉴于上述问题而做出。在本发明的电路装置中,具有:电路基板、设置在所述电路基板的一主表面侧的导电图案、固定在所述导电图案上的电路元件及覆盖所述电路基板的树脂密封体,该电路装置的特征在于,所述电路基板包括所述一主表面、与所述一主表面相对的另一主表面、配置在所述一主表面与所述另一主表面之间的侧表面,所述树脂密封体具有覆盖至少所述电路基板的一主表面侧及一部分侧表面的第一树脂密封体以及覆盖至少所述电路基板的另一主表面侧及一部分侧表面的第二树脂密封体,所述第一树脂密封体与所述第二树脂密封体的重合区域配置在所述电路基板的侧面,所述重合区域的顶部位置低于低于所述电路基板的上表面侧的位置。
而且,在本发明的电路装置的制造方法中,在树脂密封模具中配置一主表面侧设有电路元件的电路基板,在所述树脂密封模具的型腔内注入第一密封树脂,从而形成树脂密封体,该电路装置的制造方法的特征在于,包括如下工序:准备将含有热硬化性树脂的粉末状树脂材料加压而形成的树脂片,在所述树脂密封模具的型腔内以层积在所述树脂片上的方式配置所述电路基板;由所述树脂片熔化形成的第二密封树脂覆盖与所述电路基板的一主表面相对的另一主表面侧及配置在所述电路基板的一主表面与另一主表面之间的一部分侧表面,由注入到所述型腔内的所述第一密封树脂覆盖所述电路基板的一主表面侧及一部分所述侧表面,并且在所述侧面使所述第一密封树脂与所述第二密封树脂重合而形成所述树脂密封体。
在本发明中,由两种密封树脂构成树脂密封体,在电路基板的侧面配置密封树脂的重合区域,由此能够提高耐压特性,防止电路基板短路。
而且,在本发明中,覆盖电路基板的下表面侧直至侧表面的上方的密封树脂中的填料粒径大于覆盖电路基板的上表面侧的密封树脂中的填料粒径,由此能够提高电路装置向外部的散热性。
而且,在本发明中,采用在电路基板下表面侧不配置电路元件等的结构,并且使用氧化铝作为电路基板下表面侧的树脂内的填料,由此能够大幅降低含有该填料的树脂的热阻。
还有,在本发明中,使用树脂片形成电路基板的下表面侧的树脂,由此能够增大该树脂所含有的填料的粒径,提高电路装置向外部的散热性。
而且,在本发明中,配置在电路基板的下表面侧的填料形状为多角形形状,由此能够大幅降低含有该填料的树脂的热阻。
还有,在本发明中,使用二氧化硅(シリカ)作为重视耐湿性的电路基板上表面侧的树脂内的填料,由此能够大幅降低材料成本。
而且,在本发明中,覆盖电路基板的下表面侧直至侧表面的上方的密封树脂先于覆盖电路基板的上表面侧的密封树脂硬化,由此能够防止电路基板上翘。
附图说明
图1(A)是说明本发明实施方式的电路装置的立体图,(B)是说明本发明实施方式的电路装置的剖面图;
图2(A)是说明本发明实施方式的电路装置的立体图,(B)是说明本发明实施方式的电路装置的剖面图;
图3(A)是说明本发明实施方式的电路装置的制造方法的剖面图,(B)是说明本发明实施方式的电路装置的制造方法的剖面图,(C)是说明本发明实施方式的电路装置的制造方法的剖面图;
图4(A)是说明本发明实施方式的电路装置的制造方法的剖面图,(B)是说明本发明实施方式的电路装置的制造方法的剖面图;
图5(A)是说明本发明实施方式的半导体装置的平面图,(B)是说明本发明实施方式的半导体装置的剖面图;
图6(A)是说明本发明实施方式的半导体装置的制造方法的平面图,(B)是说明本发明实施方式的半导体装置的制造方法的平面图;
图7(A)是说明本发明实施方式的半导体装置的制造方法的剖面图,(B)是说明本发明实施方式的半导体装置的制造方法的剖面图,(C)是说明本发明实施方式的半导体装置的制造方法的剖面图;
图8(A)是说明本发明实施方式的半导体装置的制造方法的剖面图,(B)是说明本发明实施方式的半导体装置的制造方法的剖面图;
图9(A)是说明现有的实施方式的电路装置及其制造方法的剖面图,(B)是说明现有的实施方式的电路装置及其制造方法的剖面图;
图10是说明现有的实施方式的电路装置的剖面图。
附图标记说明
1电路装置;2树脂密封体;2A第一树脂密封体;2B第二树脂密封体;3引线;4电路基板;6导电图案;13树脂片;21树脂密封模具。
具体实施方式
下面,对本发明的第一实施方式的电路装置进行说明。图1(B)是图1(A)所示的电路装置的A-A线方向上的剖面图,图2(A)是说明树脂片的立体图,图2(B)是说明树脂片的剖面图。
图1(A)表示电路装置1的立体图,在电路装置1中,在树脂密封体2内的电路基板4(参照图1(B))上表面,构筑由导电图案6(参照图1(B))和电路元件构成的混合集成电路,与该电路连接的引线3从树脂密封体2向外部引出。而且,电路基板4的上表面、侧表面及下表面都被由热硬化性树脂构成的树脂密封体2覆盖。
如图1(B)所示,电路基板4是由铝或铜等金属形成的基板,例如,形成长×宽×厚=61mm×42.5mm×1.5mm左右的形状。在此,也可以采用金属以外的材料作为电路基板4的材料,例如也可以采用陶瓷或树脂材料作为电路基板4的材料。
绝缘层5覆盖电路基板4的整个表面区域而形成,绝缘层5由含有大量的填料的环氧树脂形成。而且,在绝缘层5上表面形成导电图案6以实现规定的电路。导电图案6由例如铜等的金属膜形成,其厚度为50μm左右。
构成电路元件的半导体元件7、芯片元件8经由焊料等接合材料9固定在导电图案6的规定位置上,而且半导体元件7与导电图案6经由金属细线10连接。在此,采用晶体管、LSI芯片、二极管等作为半导体元件7,采用芯片电阻、芯片电容等作为芯片元件8。需要说明的是,如图所示,也可以在半导体元件7和导电图案6之间设置散热部件。
引线3固定在设置于电路基板4的周边部的焊盘11上,作为通过输入信号或输出信号的外部连接端子而发挥作用。而且,如图1(A)所示,多个引线3都沿着电路基板4的长度方向的相对的两个侧边配置。需要说明的是,焊盘11为导电图案6的一个区域。
树脂密封体2由第一树脂密封体2A和第二树脂密封体2B构成,圆形标记12所示的区域是第一树脂密封体2A和第二树脂密封体2B的重合区域(树脂之间相互混合而获得足够的接合强度的区域),在该区域第一、第二树脂密封体2A、2B被一体化。与第一树脂密封体2A和第二树脂密封体2B形成为单体的区域相比较,该重合区域的耐压特性略差。当该重合区域配置在电路基板4的下表面侧或侧面的下端部附近,并且电路装置1安装在散热部件的上表面时,电路基板4和散热部件可能经由该重合区域出现短路。
因此,在本实施方式中,该重合区域配置在电路基板4的侧表面中央的上方侧,由此防止电路基板4经由该重合区域与外部部件发生短路。另外,如圆形标记12所示,电路基板4的侧表面的第二树脂密封体2B硬化而形成向电路基板4的上表面侧凸出的凸部。而且,调整树脂片13的大小及厚度,使得第二树脂密封体2B的顶部12A低于电路基板4的上表面(包括绝缘层5的表面)。根据该结构,防止构成第二树脂密封体2B的树脂向电路基板4的上表面侧漫延,并且利用该树脂所含有的氧化铝防止电路基板4的上表面侧的耐湿特性恶化,关于详细的说明将在后面叙述。另外,通过调整氧化铝的大小及形状,可以防止电路元件损坏、金属细线断线等。
而且,第一树脂密封体2A是将熔融的树脂注入树脂密封模具的型腔内而形成的,第一树脂密封体2A覆盖半导体元件7等电路元件、引线3的连接部分、电路基板4的上表面及一部分侧表面(电路基板4的侧表面上方侧)。
另一方面,第二树脂密封体2B是将配置在电路基板4的下表面的树脂片13(参照图2(A))熔化而形成的,第二树脂密封体2B覆盖电路基板4的下表面,进而覆盖到如圆形标记12所示的电路基板4的侧表面的上方侧。而且,电路基板4的下表面的第二树脂密封体2B的厚度T1例如为0.1mm以上、0.3mm以下,是非常薄的薄膜。另外,电路基板4的侧表面的第二树脂密封体2B的厚度T2例如为1.0mm以下,也是薄膜。第二树脂密封体2B含有热导率良好的氧化铝,并且其厚度T1、T2为薄膜,因而可以降低第二树脂密封体2B的热阻,关于详细的说明将在后面叙述。而且,从半导体元件7等电路元件释放的热量可经由电路基板4及第二树脂密封体2B向电路装置1的外部很好地散热。
如图2(A)所示,树脂片13是通过将以热硬化性树脂为主成分的粒状粉末树脂加压加工(压锭加工)而成形的,并形成为片状树脂。作为粉末树脂,可采用环氧树脂、邻甲酚醛联苯、二环戊二烯等。而且,在粉末树脂中混入填料,作为填料,既可以采用氧化铝,也可以采用结晶二氧化硅、碎块二氧化硅、熔融二氧化硅、氮化硅中的任一种与氧化铝混合的混合物。
根据使用树脂片13的电路装置1的种类,树脂片13的平面大小(L1×L2)有所不同,但与所使用的电路基板4具有相同的大小或者比电路基板4大。另一方面,树脂片13的厚度T3例如为0.1mm以上、0.8mm以下。
如图2(B)所示,树脂片13由很多的粒状的粉末树脂14构成,该粉末树脂14由添加了填料等添加剂的环氧树脂等热硬化性树脂构成,各粉末树脂14的直径例如为1.0mm以下。而且,在树脂片13中,粉末树脂14的填充率(粉末树脂14相对于树脂片13整体容积所占的比例)在99%以上,通过这样提高树脂片13的填充率,可以抑制在树脂片13熔化而形成的第二树脂密封体2B中产生空隙(ボイド)。
如前所述,首先,第一树脂密封体2A是在树脂密封模具的型腔里注入熔融的树脂而形成的。然后,需要抑制树脂内所含有的硬的填料在注入树脂时与电路元件及金属细线发生冲突,电路元件损坏,撞倒金属细线,撞断细线。因此,形成第一树脂密封体2A的树脂所含有的填料的形状采用球状,并且采用其粒径最大为75μm左右的填料。
并且,第一树脂密封体2A主要覆盖电路基板4的上表面侧,并且与散热性相比,对防止金属细线的腐蚀等的耐湿性要求更高。为此,作为填料,采用耐湿性良好的二氧化硅,由于二氧化硅的材料成本比氧化铝低,所以采用二氧化硅既维持了第一树脂密封体2A的耐湿性,又降低了材料成本。需要说明的是,在第一树脂密封体2A中,由于重视耐湿性,因此可以减少填料的含量。这种情况下,在注入树脂时,硬的填料与电路元件或金属细线冲突的频率减小,从而能够抑制电路元件损坏等。
接着,第二树脂密封体2B是通过熔化树脂片13而形成的。通过电路基板4向熔融的树脂片13的树脂内的沉浸,第二树脂密封体2B覆盖电路基板4的下表面侧,详细情况将在后面叙述。也就是说,与第一树脂密封体2A不同,形成第二树脂密封体2B的树脂不必在电路基板4的下表面和下模22的内壁之间的例如0.3mm左右的间隙中流动。为此,形成第二树脂密封体2B的树脂所含有的填料可使用粒径最大为150μm左右的填料。即在第二树脂密封体2B中,使用比第一树脂密封体2A的填料粒径大的填料,可以大幅降低第二树脂密封体2B的热阻,大幅提高电路基板4的下表面侧的散热性。需要说明的是,如前所述,由于形成第二树脂密封体2B的树脂几乎不流动,所以填料较均匀地填充第二树脂密封体2B的整个区域。利用该结构,使第二树脂密封体2B的热阻在整体上均一。
并且,第二树脂密封体2B主要以覆盖电路基板4的下表面侧及侧表面的上方为目的而形成,不可蔓延到电路基板4的上表面侧。为此,如前所述,无需考虑电路元件的损坏、金属细线的断线等问题,作为填料的形状,可使用结晶类或碎块类那样的多角形形状的填料。通过使填料的形状具备多角形形状,能增大填料的表面积,增大填料与树脂的接触面积,从而使经由填料的热的传导良好,能大幅降低第二树脂密封体2B的热阻。利用该结构,在电路装置1中,不但在电路基板4的下表面侧,而且在其侧表面侧也能实现良好的散热,可大幅提高电路装置1整体的散热性。需要说明的是,可以通过增加第二树脂密封体2B所含有的填料量,使之大于第一树脂密封体2A所含有的填料量,也能降低第二树脂密封体2B的热阻。
并且,对于第二树脂密封体2B而言,与耐湿性相比,对散热性的要求更高,作为第二树脂密封体2B所含有的填料,采用热导率为2.1W/m·K的导热性良好的氧化铝。由于第二树脂密封体2B含有氧化铝,在第二树脂密封体2B内产生多孔,提高吸湿性,但是,在电路基板4的下表面侧及侧表面侧并没有配置电路元件、金属细线等,所以不会出现特别的问题。需要说明的是,如前所述,作为第二树脂密封体2B所含有的填料,也可以采用结晶二氧化硅、碎块二氧化硅、熔融二氧化硅、氮化硅中的任一种与氧化铝混合的混合物。
如前所述,第二树脂密封体2B采用导热性良好的氧化铝,且采用像结晶类或碎块类那样的多角形形状。因此,在第二树脂密封体2B不蔓延至电路基板4的上表面侧的条件下,尽量将第二树脂密封体2B配置成一直覆盖至电路基板4的侧表面的上方,由此可以解决如前所述的短路问题,并且能提高电路装置1的散热性。也就是说,在能够维持电路基板4的上表面侧的耐湿性的范围内,可以调整第二树脂密封体2B覆盖电路基板4的侧表面的范围。
需要说明的是,在本实施方式中,虽然说明了将配置在电路基板4的下表面的树脂片13熔化并对其进行加热硬化而形成第二树脂密封体2B的情况,但本发明不限定于此。例如,也可以与第一树脂密封体2A相同,通过向树脂密封模具中注入或灌注树脂等其他的制造方法,来形成第二树脂密封体2B。即如前所述,只要能降低第二树脂密封体2B的热阻,提高电路基板4的下表面侧及侧表面侧的散热性即可。在不脱离本发明要旨的范围内,可以进行其他各种变更。
接着,对本发明的第二实施方式的电路装置的制造方法进行说明。图3(A)~图3(C)是说明电路基板在树脂密封模具内的配置情况的剖面图,图4(A)及(B)是说明在树脂密封模具内注入树脂的情况的剖面图。需要说明的是,在本实施方式中,由于说明利用图1~图2所说明的电路装置的制造方法,因此同一构成部件标注同样的附图标记,并且适当参照图1~图2。
如图3(A)所示,首先,准备电路基板4,在电路基板4上形成绝缘层5,在绝缘层5的上表面贴合例如铜的金属膜,将该金属膜蚀刻为所希望的图案,由此在电路基板4上形成导电图案6及焊盘11。然后,在导电图案6的所希望的位置固定多个半导体元件7和多个芯片元件8,而且,在焊盘11上固定引线3。
接着,在树脂密封模具21的下模22的内壁上表面载置树脂片13之后,在该树脂片13上表面载置电路基板4。然后,将上模23与下模22对接,由上下模23、22夹住引线3,由此使电路基板4的位置固定在型腔24内。需要说明的是,如前所述,在树脂密封模具21内配置并实施热处理的前阶段中,树脂片13处于粒状的热硬化性树脂被加压加工的固体状态。
如图3(B)所示,树脂片13的厚度T3例如为0.8mm左右,该厚度大于覆盖电路装置1的电路基板4下表面侧的树脂密封体2的厚度T1(参照图1(B))。
另一方面,如前所述,型腔24内的电路基板4由上下模23、22夹住引线3,电路基板4的下表面处于固定在距离下模22的内壁上表面T1的位置的状态。据此,以在树脂片13上表面载置电路基板4的状态,若由树脂密封模具21夹住引线3,则如该图中的圆形标记25所示,引线3产生弹性变形。而且,电路基板4将树脂片13向下模22侧按压,使树脂片13处于固定的状态。
如图3(C)所示,在树脂密封模具21上装备加热机构(未图示),树脂密封模具21通过该加热机构加热到树脂片13熔化并使其加热硬化的温度(例如170℃以上)。而且,在型腔24内定位树脂片13及电路基板4后,通过加热树脂密封模具21,随着时间的经过,树脂片13熔化而软化。
如前所述,由于引线3以弹性变形后的状态被树脂密封模具21所夹住,所以,如果树脂片13熔化,则如圆形标记26所示,引线3恢复原来的形状,电路基板4沉浸到熔融的树脂内。然后,随着电路基板4的沉浸,熔融的树脂从电路基板4的下方向侧方移动并硬化,从而第二树脂密封体2B覆盖电路基板4的下表面直至侧表面的上方附近。此时,由于所形成的树脂片13的平面大小大于电路基板4,所以第二树脂密封体2B可靠地覆盖电路基板4的下表面。另外,通过使熔融的树脂从电路基板4的下方向侧方移动,能够抑制在电路基板4下表面产生空隙。
如图4(A)所示,在向设置于下模22的纵槽27投入树脂块(タブレツト)28并对其进行加热熔化后,通过柱塞29向树脂块28加压。树脂块28通过将混入了填料等添加物的粉状热硬化性树脂(环氧树脂、邻甲酚醛联苯、二环戊二烯等)加压成型为圆柱状。如前所述,因为树脂密封模具21被加热至170℃以上,所以,一旦将树脂块28投入纵槽27,则树脂块28逐渐熔化。然后,如果树脂块28熔化成液状或半固态的状态,则流经流道30并通过浇口31提供给型腔24内。
如图4(B)所示,在型腔24内填充了树脂块28熔化后的树脂。此时,由于树脂密封模具21的温度高于该熔融是树脂加热硬化的温度,所以,填充到型腔24的树脂随着时间的经过而重合并硬化。
在此,在本工序中,例如调整工序作业顺序和树脂配合,使第二树脂密封体2B先于第一树脂密封体2A加热硬化。通过这样的工序,首先,电路基板4和第二树脂密封体2B硬化成一体,从而可以防止由于第一树脂密封体2A硬化时的收缩力而使电路基板4上翘。而且,由于第一树脂密封体2A以液态状态提供给型腔24内,所以第一树脂密封体2A在施加了柱塞29的压力状态下进行加热硬化,其结果,如圆形标记12所示,在第一树脂密封体2A和第二树脂密封体2B的分界面,通过从第一树脂密封体2A向第二树脂密封体2B侧施加压力,第一、第二树脂密封体2A、2B易于重合,提高其一体化水平,从而确保该重合区域的耐湿性。
最后,如果在树脂密封模具21内第一树脂密封体2A与第二树脂密封体2B充分重合并加热硬化,则使上模23与下模22分离,取出成型品的电路装置1。之后,将填充在排气道32及流道30等的部分硬化树脂从树脂密封体2切断,加工引线的外引线部,完成如图1所示的电路装置。
接着,对本发明的第三实施方式的半导体装置进行说明。图5(B)是图5(A)所示的半导体装置在B-B方向上的剖面图,需要说明的是,在图5(A)中也图示并说明了因树脂密封体而看不到的部分,而且,在进行该说明时,适当参考图1~图2的说明。
如图5(A)所示,半导体装置41主要由岛部42、在岛部42上通过焊料等接合材料固定的半导体元件43、通过金属细线45与半导体元件43的电极焊盘44电连接的引线46以及整体覆盖上述部件的树脂密封体47构成。如图所示,支承引线48从岛部42的四角向外侧延伸,通过该支承引线48,岛部42机械地支承在框架上。
如图5(B)所示,树脂密封体47由第一树脂密封体47A和第二树脂密封体47B构成。虽然在纸面上描绘了第一树脂密封体47A与第二树脂密封体47B的分界,但在实际的半导体装置41上,第一、第二树脂密封体47A、47B是重合而被一体化。而且,第一树脂密封体47A是向树脂密封模具的型腔内注入熔融的树脂而形成的,第二树脂密封体47B是将配置在岛部42下表面的树脂片13(参照图2(A))熔化而形成的。第二树脂密封体47B的厚度T4例如为0.1mm以上、0.3mm以下,形成非常薄的膜,可降低第二树脂密封体47B的热阻。
而且,构成第一树脂密封体47A的树脂的组成与第一树脂密封体2A相同,构成第二树脂密封体47B的树脂的组成与第二树脂密封体2B相同,关于它们的说明可参考第一实施方式的图1及图2的说明,在此省略该说明。而且,如圆形标记48所示,在半导体装置41中,第二树脂密封体47B也覆盖岛部42的下表面直至侧表面的上方。而且,由于岛部42下表面的第二树脂密封体47B为薄膜,因而可降低第二树脂密封体47B的热阻,半导体元件43所释放的热量经由岛部42及第二树脂密封体47B很好地向半导体装置41的外部散热。
需要说明的是,在本实施方式中,说明了将配置在岛部42下表面的树脂片13熔化并对其加热硬化来形成第二树脂密封体47B的情况,但不限于该情况。例如,也可以与第一树脂密封体47A一样,通过向树脂密封模具注入或灌注树脂等其他的制造方法,来形成第二树脂密封体47B。即如前所述,只要能降低第二树脂密封体47B的热阻且提高岛部42下表面侧的散热性即可。在不脱离本发明的要旨的范围内,可以进行其他的各种变更。
接着,对本发明的第四实施方式的半导体装置的制造方法进行说明。图6(A)及(B)是说明贴片接合工艺及引线接合工艺的平面图,图7(A)~(C)是说明在树脂密封模具内配置框架的情况的剖面图,图8(A)及(B)是说明向树脂密封模具内注入树脂的情况的剖面图。需要说明的是,在本实施方式中,由于说明利用图5(A)及(B)所说明的半导体装置的制造方法,因此对同一构成部件标注相同的附图标记。而且。在进行该说明时,适当参考图3~图4的说明。
如图6(A)所示,首先,准备规定形状的引线框架51。引线框架51由例如具有0.3mm左右厚度的铜等金属板制成,通过实施蚀刻加工或冲压加工,成型为规定形状。而且,引线框架51整体为长方形形状,在引线框架51的长度方向上配置用虚线表示的多个集合模块52,一个集合模块52上形成多个搭载部53。
如图6(B)所示,在集合模块52内,连接部54、55沿着纵向及横向延伸成格子状,如虚线所示,在由连接部54、55围成的区域内形成搭载部53。然后,在每个搭载部53的岛部42上通过接合材料固定半导体元件43,并且利用金属细线45将半导体元件43的电极焊盘44和引线46电连接。
如图7(A)所示,在树脂密封模具56的下模57的内壁上表面载置树脂片13之后,在该树脂片13上表面载置岛部42。然后,将上模58与下模57对接,由此在型腔59内收纳包括岛部42的搭载部53(参照图6(B))。如图所示,利用上下模58、57夹住支承引线48,由此型腔59内的岛部42被定位。需要说明的是,如前所述,在树脂密封模具56内配置并实施热处理前阶段中,树脂片13处于粒状的热硬化性树脂被加压加工的固体状态。
如图7(B)所示,树脂片13的厚度T3例如为0.8mm左右,该厚度大于覆盖岛部42下表面侧的树脂密封体47的厚度T4(参照图7(C))。
另一方面,如前所述,型腔59内的岛部42处于由上下模58、57夹住支承引线48,岛部42的下表面定位在距离下模57的内壁上表面T3的位置的状态。据此,如果以在树脂片13上表面载置岛部42的状态通过树脂密封模具56夹住支承引线48,则支承引线48发生弹性变形,树脂片13以被岛部42向下模57按压的状态被固定。另外,虚线表示支承引线48未变形的状态。
如图7(C)所示,在树脂密封模具56上装备加热机构(未图示),树脂密封模具56通过该加热机构加热至树脂片13熔化并对其加热硬化的温度(例如170℃以上)。然后,在型腔59内定位树脂片13及岛部42后,通过加热树脂密封模具56,随着时间的经过,树脂片13熔化而软化,岛部42的下表面被熔融的树脂所覆盖。需要说明的是,第二树脂密封体47B的厚度T4例如为0.1mm以上、0.3mm以下,为非常薄的薄膜,可降低第二树脂密封体47B上的热阻。
如图所示,如果树脂片13熔化,则支承引线48的形状恢复原形,岛部42向下方沉浸。然后,随着岛部42的沉浸,熔融的树脂的一部分从岛部42的下方向侧方移动,第二树脂密封体47B覆盖到岛部42的下表面直至岛部42的侧表面的上方。
如图8(A)所示,在向设置于下模57的纵槽60投入树脂块61并对其进行加热熔化后,通过柱塞62向树脂块61加压。树脂块61是通过将混入了填料等添加物的粉状热硬化性树脂(环氧树脂、邻甲酚醛联苯、二环戊二烯等)加压成型为圆柱状。如前所述,因为树脂密封模具56被加热至170℃以上,所以,若将树脂块61投入纵槽60,则树脂块61逐渐熔化。然后,如果树脂块61熔化成液状或半固态的状态,则流经流道63并通过浇口64供给型腔59内。
如图8(B)所示,在型腔59内填充了树脂块61熔化后的树脂。此时,由于树脂密封模具56的温度高于该熔融的树脂加热硬化的温度,所以,填充型腔59的树脂随着时间的经过而重合并硬化。需要说明的是,如在前面利用图4(B)所述那样,第一树脂密封体47A与第二树脂密封体47B的分界面重合并硬化成一体。
最后,如果在树脂密封模具56内第一树脂密封体47A与第二树脂密封体47B充分重合并加热硬化,则使上模58与下模57分离,取出成型品的半导体装置41。之后,将填充在排气道65及流道63等的部分硬化树脂从树脂密封体47切断,加工引线的外引线部,完成如图5(A)所示的半导体装置。
Claims (15)
1.一种电路装置,具有:电路基板、设置在所述电路基板的一主表面侧的导电图案、固定在所述导电图案上的电路元件及覆盖所述电路基板的树脂密封体,该电路装置的特征在于,
所述电路基板包括所述一主表面、与所述一主表面相对的另一主表面、配置在所述一主表面与所述另一主表面之间的侧表面,
所述树脂密封体具有覆盖至少所述电路基板的一主表面侧及一部分侧表面的第一树脂密封体以及覆盖至少所述电路基板的另一主表面侧及一部分侧表面的第二树脂密封体,
所述第一树脂密封体与所述第二树脂密封体的重合区域配置在所述电路基板的侧面,所述重合区域的顶部位于低于所述电路基板的上表面侧的位置;
所述重合区域配置在所述电路基板的侧表面中央的上方侧。
2.如权利要求1所述的电路装置,其特征在于,
所述第二树脂密封体所含有的填料粒径大于所述第一树脂密封体所含有的填料粒径。
3.如权利要求2所述的电路装置,其特征在于,
所述第二树脂密封体所含有的填料的材质与所述第一树脂密封体所含有的填料的材质不同,所述第二树脂密封体所含有的填料的热导率大于所述第一树脂密封体所含有的填料的热导率。
4.如权利要求2或3所述的电路装置,其特征在于,
所述第二树脂密封体由配置在所述电路基板的另一主表面的下面且将粉末树脂加压形成的树脂片熔化后硬化的树脂构成。
5.如权利要求2或3所述的电路装置,其特征在于,
所述第二树脂密封体所含有的填料的形状为结晶状或碎块状。
6.如权利要求4所述的电路装置,其特征在于,
所述第二树脂密封体所含有的填料的形状为结晶状或碎块状。
7.如权利要求2或3所述的电路装置,其特征在于,
所述第一树脂密封体所含有的填料为球形的二氧化硅,所述第二树脂密封体所含有的填料为氧化铝。
8.如权利要求4所述的电路装置,其特征在于,
所述第一树脂密封体所含有的填料为球形的二氧化硅,所述第二树脂密封体所含有的填料为氧化铝。
9.如权利要求5所述的电路装置,其特征在于,
所述第一树脂密封体所含有的填料为球形的二氧化硅,所述第二树脂密封体所含有的填料为氧化铝。
10.如权利要求6所述的电路装置,其特征在于,
所述第一树脂密封体所含有的填料为球形的二氧化硅,所述第二树脂密封体所含有的填料为氧化铝。
11.一种电路装置的制造方法,在树脂密封模具中配置一主表面侧设有电路元件的电路基板,向所述树脂密封模具的型腔内注入第一密封树脂,从而形成树脂密封体;该电路装置的制造方法的特征在于,包括如下工序:
准备将含有热硬化性树脂的粉末状树脂材料加压而形成的树脂片,在所述树脂密封模具的型腔内以层积在所述树脂片上的方式配置所述电路基板;
由所述树脂片熔化形成的第二密封树脂覆盖与所述电路基板的一主表面相对的另一主表面侧及配置在所述电路基板的一主表面与另一主表面之间的一部分侧表面,由注入到所述型腔内的所述第一密封树脂覆盖所述电路基板的一主表面侧及一部分所述侧表面,并且在所述侧表面使所述第一密封树脂与所述第二密封树脂重合而形成所述树脂密封体;
重合区域配置在所述电路基板的侧表面中央的上方侧。
12.如权利要求11所述的电路装置的制造方法,其特征在于,
所述第二密封树脂所含有的填料粒径大于所述第一密封树脂所含有的填料粒径,通过使所述电路基板浸入所述第二密封树脂内,所述第二密封树脂一直覆盖到电路基板的侧表面。
13.如权利要求11或12所述的电路装置的制造方法,其特征在于,
至少在所述树脂片开始熔化后,向所述型腔内注入第一密封树脂,使所述第二密封树脂先于所述第一密封树脂加热硬化。
14.如权利要求12所述的电路装置的制造方法,其特征在于,
所述第一密封树脂所含有的填料为球形的二氧化硅,所述第二密封树脂所含有的填料为结晶状或碎块状的氧化铝。
15.如权利要求13所述的电路装置的制造方法,其特征在于,
所述第一密封树脂所含有的填料为球形的二氧化硅,所述第二密封树脂所含有的填料为结晶状或碎块状的氧化铝。
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