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CN100511738C - 半导体发光元件 - Google Patents

半导体发光元件 Download PDF

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Publication number
CN100511738C
CN100511738C CNB2006100567686A CN200610056768A CN100511738C CN 100511738 C CN100511738 C CN 100511738C CN B2006100567686 A CNB2006100567686 A CN B2006100567686A CN 200610056768 A CN200610056768 A CN 200610056768A CN 100511738 C CN100511738 C CN 100511738C
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CN
China
Prior art keywords
mentioned
electrode
layer
pad electrode
wire electrode
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Expired - Fee Related
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CNB2006100567686A
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English (en)
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CN1828959A (zh
Inventor
富冈优子
小林静一郎
竹岛一树
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Stanley Electric Co Ltd
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Stanley Electric Co Ltd
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Abstract

在现有的实现了使被焊盘电极覆盖的部分不发光、提高光的取出效率的半导体发光元件中，产生了如下问题：在焊盘电极中，容易混入构成线状电极的材料，由于Au线的接合力不足而容易产生损坏等。本发明提供了一种半导体发光元件，在元件(1)的最表面半导体层(1a)的表面，具有焊盘电极(3)，在最表面半导体层和焊盘电极之间进行肖特基接合，在网状地覆盖除焊盘电极占据的部分之外的表面的线状电极(2)和最表面半导体层之间，进行欧姆接合，焊盘电极和线状电极在一部分接触，进行欧姆接合，在线状电极和焊盘电极的接触部，焊盘电极的层结构中的势垒金属层(3b)覆盖线状电极的层结构中的上部以及侧面的一部分或全部，从而使线状电极的构件不混入焊盘电极，来解决课题。

Description

半导体发光元件
技术领域
本发明涉及半导体发光元件的结构，尤其涉及电极的结构，例如，在进行引线接合的焊盘电极的背面，因为该焊盘电极不透明，所以即使发光也被上述焊盘电极遮挡或吸收，不能效率良好地取出在该背面部分所发的光，相对于施加功率，发光效率低下。
背景技术
为了解决该问题，有称为电流狭窄型发光二极管的下述的半导体发光元件：在最表面半导体层上设置焊盘电极以及与该焊盘电极接触的大致网眼状的线状电极，在上述焊盘电极和最表面半导体层之间进行肖特基接合，使得在被上述焊盘电极覆盖的部分，不流过电流也不发光，防止相对于施加电力发光量减少。
图7以及图8是表示现有的该种电流狭窄型发光二极管90的结构的示例的图，首先，如在图7中以剖面所示，在由LED芯片91的P层92、活性层93、N层94构成的发光层的上面，利用N型半导体形成由n-AlGaInP构成的最表面半导体层95。
而且，如图8所示，在上述最表面半导体层95上，对于该最表面半导体层95，铺设例如An/Sn/Ni等金属的线状电极96，该线状电极96采用蜘蛛网状等的可遍及上述最表面半导体层95的广大范围无遗漏地供给电流的形状，通过对上述最表面半导体层95和上述线状电极96进行热合金化而进行欧姆接合。
另外，在上述线状电极96的中心形成有焊盘用电极97，以使其与上述最表面半导体层95和线状电极96两者接触。此时，上述焊盘用电极97选择具有比上述最表面半导体层95的电子亲和力大的功函数的金属材料，例如Ti/Au/Pt。而且，在该焊盘用电极97上连接有接合线98，可从外部供电。
通过这样来构成，上述最表面半导体层95和上述线状电极96进行欧姆接合，上述线状电极96和上述焊盘用电极97也进行欧姆接合，只有上述最表面半导体层95和上述焊盘用电极97进行肖特基接合。
因此，被提供给上述接合线98的电力从上述焊盘用电极97经过上述线状电极96传导到上述最表面半导体层95，而不是从进行了肖特基接合的上述焊盘用电极97向上述最表面半导体层95供给电流，因此，上述焊盘用电极97的下方不发光，不进行无效的供电。
【专利文献1】日本特开2004-296979号公报
但是，在上述说明的现有结构的电流狭窄型发光二极管90的结构中，的确可以抑制焊盘用电极97的下面的发光，达到了目的，然而为了提高上述最表面半导体层95和上述线状电极96的欧姆接合性，在进行热合金化时，在线状电极96侧添加的Ge、Zn等在上述焊盘用电极97上析出，减弱了上述接合线98的接合强度。
另外，在铺设上述线状电极96时，因为该线状电极96也成为遮光的因素，所以优选在不会发生上述LED芯片91的供电不足的范围内将其形成得较细，然而由于容易发生以上说明的线状电极96侧添加的Ge、Zn等在进行热合金化时集中到一部分上、使上述线状电极96的电阻值提高等的现象，因此，5μm左右的宽度成为极限，不能比这更细，因此，也同时产生虽然结构复杂化了，但是光的取出效率并未提高的问题。
发明内容
在本发明中，作为用于解决上述以往的问题的具体手段，通过提供一种半导体发光元件来解决问题，该半导体发光元件具有：焊盘电极，其被设置于最表面半导体层的表面上，由多个层构成；线状电极，其被设置于最表面半导体层的表面，网状地覆盖上述焊盘电极所占据的部分以外的表面，和上述焊盘电极部分接触，和最表面半导体层进行欧姆接合；以及势垒金属层，其被包含于上述焊盘电极中，在上述线状电极和上述焊盘电极的接触部中，覆盖上述线状电极的上表面以及侧面的一部分或全部，在上述线状电极的欧姆层的上表面形成势垒金属层。另外，和上述说明的背景技术的焊盘用电极同样，焊盘电极是为了进行引线接合而设置的，其具有对线状电极供电的作用，至少具有用于进行引线接合的足够的面积。
根据本发明，第一，通过防止经由与最表面半导体层进行欧姆接合的线状电极与焊盘电极的接合部进行的、上述线状电极的成分的扩散移动，来解决上述的现有问题。即，通过防止构成上述线状电极的成分向上述焊盘电极的最表面以及底面(肖特基接合面)的移动扩散，能够维持金丝的接合强度、上述焊盘电极的肖特基特性。
另外，第二，通过在与最表面半导体层进行欧姆接合的线状电极、以及与上述最表面半导体层进行肖特基接合的焊盘电极的各个电极的层结构中设置势垒金属层，不管在怎样的工序阶段进行元件制造工序的热合金工序，也不产生由扩散、移动引起的Ge、Zn等向电极表面的析出，在元件制造工序的次序上获得灵活性。
并且，在上述线状电极中，作为构成成分的Ge、Zn等集中到一部分上，不会损害线状电极的导电性，以往以5μm左右的线宽为极限的线状电极已经可制作成细至2μm左右，以往被该线状电极所遮挡的光量也可以取出到外部，达到能生产更明亮的LED的效果。
附图说明
图1是表示本发明的半导体发光元件的实施方式的平面图。
图2是沿图1的A-A线的主要部分的剖面图。
图3是表示本发明的半导体发光元件的制造工序的第一工序的说明图。
图4是表示本发明的半导体发光元件的制造工序的第二工序的说明图。
图5是表示本发明的半导体发光元件的制造工序的第三工序的说明图。
图6是表示本发明的半导体发光元件的完成状态的说明图。
图7是表示现有例的剖面图。
图8是表示现有例的平面图。
符号说明
1…半导体发光元件；1a…最表面半导体层；1b…活性层；1c…衬底；2…线状电极；2a…线状电极第一欧姆层；2b…线状电极势垒金属层；2c…线状电极粘接层；2d…线状电极第二欧姆层；3…焊盘电极；3a…焊盘电极第一粘接层；3b…焊盘电极势垒金属层；3c…焊盘电极第二粘接层；3d…焊垫；4…Au丝。
具体实施方式
下面，基于图中所示的实施方式详细说明本发明。本发明涉及发光二极管1的结构以及制造方法，与在现有例中说明过的相同，关于电流狭窄型发光二极管。
而且，在本发明的发光二极管的特征在于，为了防止上述线状电极的构成元素向上述焊盘电极的上方向以及横方向的扩散移动，在上述线状电极和上述焊盘电极的接触部，在上述线状电极的上部以及侧面的一部分或全部上具有势垒金属层，在上述势垒金属层和上述最表面半导体层之间以及/或者在上述势垒金属层和上述线状电极结构之间，具有粘接层。而且，优选的是上述粘接层具有势垒功能。
另外，作为上述的在上述线状电极和上述焊盘电极的接触部所设置的势垒金属层，可列举出TiWN、TaN、WN、Ni、NiV等，只要能起到本发明作为目的的效果，并不限定于这些。
图1以及图2所示的是本发明的半导体发光元件1，图1是平面图，图2是以本发明的主要部分、即焊盘电极3以及线状电极2的部分为主的剖面图。另外，上述焊盘电极3以及线状电极2都是在与最表面半导体层1a的表面接合的状态下设置的，上述线状电极2以及焊盘电极3也是在部分接合的状态下设置的，这一点和现有例的情况是相同的。
作为能够与最表面半导体层1a之间进行欧姆接合的线状电极2用的材料，在上述最表面半导体层1a是n型的情况下，可由从Au、Ge、Sn、Ni中选择的金属或它们的共晶合金构成。
这里，为了防止上述线状电极2的构成元素Ge，Zn等移动到上述线状电极2的上部，或者经上述线状电极2和上述焊盘电极3的接触部而移动到上述焊盘电极3侧，给电极特性、形状等带来不好影响，本发明中，在构成上述线状电极2的层结构中和构成上述焊盘电极3的层结构中，形成势垒金属层2b、3b。
具体的，为了防止由于上述线状电极2的构成元素向上方以及横方向的移动扩散，而引起上述线状电极2出现缝隙，或扰乱上述最表面半导体层1a和上述焊盘电极3之间的肖特基接合特性，或减弱上述焊盘电极3与Au丝4的接合强度，在构成上述线状电极2的层结构中，设置线状电极势垒金属层2b，在构成上述焊盘电极3的层结构中，设置焊盘电极势垒金属层3b。
势垒金属层3b可以与上述线状电极2的侧面接触来设置，也可隔着后述的第一粘接层3a等其它层来设置。另外，由于上述线状电极2的构成元素向上方扩散移动，而使上述线状电极形状和表面发生变化，特别是在上述线状电极2小于5μm时，有时甚至出现线状电极2断开的情况。通过在构成上述线状电极2的层结构中设置势垒金属层2b，能够形成即使在2μm时也不发生断开的线状电极2。
这里，参照图2表示上述线状电极2的层结构中的各层的作用。将和上述最表面半导体层1a接触的一侧的层作为第1层来进行说明，该第1层是用于和上述最表面半导体层1a进行欧姆接合的线状电极第一欧姆层2a，使用适合于其的材料AuGe，在该实施方式中，形成为300nm的膜厚。
而且，在上述线状电极欧姆层2a的上表面上，使用TaN形成200nm的膜厚的线状电极势垒金属层2b，其用于阻止上述线状电极欧姆层2a的构成元素向上方向的扩散。另外，在上述线状电极势垒金属层2b的上表面上，形成50nm膜厚的Ta作为线状电极粘接层2c。
接着，对焊盘电极3的结构进行说明。和上述线状电极2同样，将和上述最表面半导体层1a接触的一侧的层作为第1层进行说明，在该第1层，形成为Ta的膜厚。由该Ta层构成的焊盘电极第一粘接层3a具有如下作用：在上述线状电极2和焊盘电极3的接合部中，对在上述线状电极2的表面由Au形成的线状电极第二欧姆层2d、和在上述焊盘电极3的第二层上形成的势垒金属层3b进行粘接。对于上述线状电极2，上述线状电极2上的一部分通过侧面与焊盘电极3接触，由于在该部分导电，所以优选使密合性高。
另外，在上述第一粘接层3a形成为覆盖与上述线状电极2的接合部的侧面的本实施例方式中，上述第一粘接层3a的一部分也具有作为势垒金属层的功能，用于防止上述线状电极2的构成元素，特别是欧姆层2a的构成元素从横方向向焊盘电极3侧扩散移动。因此，不会对上述第一粘接层3a和上述最表面半导体层1a的肖特基接合产生不好影响。另外，Ta层和上述最表面半导体层进行肖特基接合。
上述焊盘电极3的第二层由TiWN形成为200nm的膜厚，作为焊盘电极势垒金属层3b而起作用，用于阻止上述线状电极2的构成元素Ge、Zn扩散移动。在上述焊盘电极势垒金属层3b上，在第三层按照50nm的膜厚形成Ta层。另外，作为第四层，形成由Au构成的焊垫层3d。
第三层的Ta层是焊盘电极第二粘接层3c，对第二层的焊盘电极势垒金属层和第四层的Au层进行良好的粘接。由于能防止上述线状电极2的构成元素向上述焊盘电极3扩散，所以能维持焊盘电极3和最表面半导体层1a的肖特基特性，以及与上述焊垫层3d中的线的接合强度。
所谓上述焊盘电极3的第1层即焊盘电极第一粘接层3a也作为势垒层起作用，是指其阻止了上述线状电极2的构成元素向上述焊盘电极3侧的横方向的移动扩散。在上述线状电极2的构成元素移动扩散到了上述焊盘电极3侧时，上述焊盘电极3和最表面半导体层1a之间的肖特基接合崩溃，因此出现电流注入时上述焊盘电极3周围的发光变得显著的现象。
在如图2所示，用Ta形成了焊盘电极第一粘接层3a的情况下，因为完全看不到上述现象，所以能够确认该焊盘电极第一粘接层3a也作为势垒金属层而起作用。作为用于形成所述焊盘电极第一粘接层3a的、具有粘接层兼势垒层的功能的材料，除了上述Ta之外，可列举Ni、Ti等。
在形成电流狭窄形发光二极管时，根据发明人的试制、点灯试验结果，如以上所示，已确认了，根据是否作为包含势垒金属层2b的层结构，与现有的结构相比可将上述线状电极2的线宽从5μm缩小到2μm。简单计算一下，可使上述线状电极2在LED芯片的发光面上占有的面积成为1/2.5，使亮度增加与之相应的程度。
以上，根据最佳实施方式说明了本发明，而本发明不限定于此，可进一步进行各种变更、改良、组合等。特别是对于焊盘电极3和最表面半导体层1a进行肖特基接合的情况，因为本发明能维持其肖特基特性，所以特别有用，而即使在焊盘电极3和最表面半导体层1a不进行肖特基接合的结构中，通过防止线状电极2的构成元素向横方向以及上方向的移动扩散，有助于焊盘电极3和丝4电极的接合强度的维持等，这一点是清楚的。
在用欧姆电极形成了焊盘电极3的情况下，因为在焊盘电极3正下方不产生发光，所以可对应于形成焊盘电极3的位置，实施p型包层的导电型的反转、p型包层上的电流阻止层的形成等，另外，也可接着最表面半导体层1a形成SiO2等的绝缘层。在这种方式中，通过在焊盘电极3的层结构中形成势垒金属层，能保持与接合线的接合强度。
另外，只要根据需要适当引入第一粘接层3a以及第二粘接层3c即可，在上述实施方式中，也可由势垒金属层3b和焊垫层3d这2层形成焊盘电极3。例如，虽然也可以使用由300nm的Ta层构成的势垒层、和由600nm的Au层构成的焊垫层这2层形成，但因为Ta膜较硬，所以如果进行较厚的层叠，则在与其它金属膜等的边界处发生剥离的可能性高，因此，优选如上述实施方式那样，通过作成层叠结构来缓和应力，或者，通过材料的选择，恰当地兼具势垒性和密合性。
而且，即使在设置第一粘接层3a的情况下，也未必需要在和焊盘层势垒金属层3b等相同的区域中形成，也可以仅覆盖线状电极的上表面以及侧面、最表面半导体层等而局部地形成，也可局部地用不同的材料形成。以上，如说明过的那样，根据本发明，可提供高质量的半导体发光元件。
【实施例1】
根据图3～图6依次说明本发明的半导体发光元件1的最表面半导体层1a是n型的情况的形成工序。在图3所示的衬底1c的最表面半导体层1a侧，如简略所示的那样，利用抗蚀剂R进行上述线状电极2的构图，首先，通过电阻加热法将AuGe以300nm的膜厚来成膜而作为线状电极第一欧姆层2a。
接下来，通过溅射法将TaN以200nm的膜厚来成膜而作为线状电极势垒金属层2b，将Ta以50nm的膜厚来成膜而作为线状电极粘接层2c，最后，将Au以200nm的膜厚作为线状电极第二欧姆层2d，按顺序进行蒸镀，之后，通过剥离来除去抗蚀剂R(参照图4)。
接着，在最表面半导体层1a上，利用抗蚀剂R2进行上述焊盘电极3用的构图(参照图5)，通过溅射法将Ta以50nm的膜厚成膜，作为焊盘电极第一粘接层3a，接着，将TiWN以200nm的膜厚进行成膜，形成焊盘电极势垒金属层3b。
接下来，将Ta以50nm的膜厚进行成膜作为焊盘电极第二粘接层3c，将Au进行蒸镀至100nm，最后，通过电阻加热法对Au进行蒸镀至500nm，作为合计为600nm的焊盘3d。之后，通过剥离来除去抗蚀剂，通过台面刻蚀(mesa etching)形成切割道(dicing street)，在400℃下进行合金化(参照图6)，完成本发明的半导体发光元件1。在上述线状电极上的一部分上层叠而形成焊盘电极3，特别是，第一粘接层3a以及势垒金属层3b形成为覆盖欧姆电极的焊盘电极3重叠的部分的侧面使其不露出。
这里，示出用于上述焊盘电极3和上述最表面半导体层1a进行肖特基接合的条件。可用公式q(Φm—x)求得因金属和n型半导体(上述最表面半导体层1a)的接触而产生的障壁的高度qΦn。另外，Φm是金属的功函数，x是半导体的电子亲和力。因此，在n型半导体上形成焊盘电极3的情况下，选择具有比该半导体的电子亲和力更大的功函数的金属材料。
具体的，在使用电子亲和力约为4.1eV的n-AlGaInP作为构成最表面半导体层1a的n型半导体的本发明的情况下，使用功函数在此之上的Ti(4.33eV)、Pt(5.65eV)、Ni(5.15eV)、Al(4.28eV)、Ta(4.25eV)等。

Claims (5)

1.一种半导体发光元件，具有：
焊盘电极，其被设置于最表面半导体层的表面，由多个层构成；线状电极，其被设置于最表面半导体层的表面上，网状地覆盖上述焊盘电极所占据的部分以外的表面，和上述焊盘电极部分接触，和最表面半导体层进行欧姆接合；以及势垒金属层，其被包含于上述焊盘电极中，在上述线状电极和上述焊盘电极的接触部，覆盖上述线状电极的上表面以及侧面的一部分或全部，在上述线状电极的欧姆层的上表面形成势垒金属层。
2.根据权利要求1所述的半导体发光元件，其特征在于，所述焊盘电极与最表面半导体层进行肖特基接合。
3.根据权利要求1或2所述的半导体发光元件，其特征在于，在所述焊盘电极的层结构中的势垒金属层与所述最表面半导体层之间具有粘接层。
4.根据权利要求1或2所述的半导体发光元件，其特征在于，在所述焊盘电极的层结构中的势垒金属层与所述线状电极之间具有粘接层。
5.根据权利要求3所述的半导体发光元件，其特征在于，所述粘接层由具有势垒功能的材料形成。
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