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CN108269792A - 瀑布引线键合 - Google Patents

瀑布引线键合 Download PDF

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Publication number
CN108269792A
CN108269792A CN201810161266.2A CN201810161266A CN108269792A CN 108269792 A CN108269792 A CN 108269792A CN 201810161266 A CN201810161266 A CN 201810161266A CN 108269792 A CN108269792 A CN 108269792A
Authority
CN
China
Prior art keywords
lead
bond pad
electrical contact
bare chip
naked core
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201810161266.2A
Other languages
English (en)
Inventor
吕忠
余芬
邱进添
俞志明
肖富强
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SanDisk SemiConductor Shanghai Co Ltd
SanDisk Information Technology Shanghai Co Ltd
Original Assignee
SanDisk SemiConductor Shanghai Co Ltd
SanDisk Information Technology Shanghai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SanDisk SemiConductor Shanghai Co Ltd, SanDisk Information Technology Shanghai Co Ltd filed Critical SanDisk SemiConductor Shanghai Co Ltd
Priority to CN201810161266.2A priority Critical patent/CN108269792A/zh
Publication of CN108269792A publication Critical patent/CN108269792A/zh
Pending legal-status Critical Current

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    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
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Abstract

公开了一种半导体器件的引线键合结构。该引线键合结构包括：键合垫；连续引线，与键合垫相互扩散，所述引线将所述键合垫与第一电接触和第二电接触电连接，第二电接触与第一电接触不同。

Description

瀑布引线键合
本发明是2011年5月18日所提出的申请号为201180044179.5、发明名称为“瀑布引线键合”的发明专利申请的分案申请。
技术领域
本技术涉及半导体装置的制造。
背景技术
引线键合是在半导体装置的制造过程中电连接比如半导体裸芯或基板的两个不同的电子元件的主要方法。
在引线键合工艺的过程中，一段引线(通常为金或铜)被供给通过针状的分配工具(称为劈刀)的中心管腔。引线从劈刀的尖端突出，在劈刀的尖端将高电压的电荷由劈刀所配备的换能器施加给该引线。该电荷熔化了位于尖端的引线，且该引线由于熔融金属的表面张力而形成了球形。当球固化时，劈刀被降低到键合表面且换能器施加超声能量。键合表面也可以被加热来帮助键合。热、压力以及超声能量的综合作用在金或铜球以及键合表面之间产生了焊接。劈刀然后拉起并离开键合表面，同时引线继续通过劈刀放出。这样形成的键合被称为球焊(ball bond)。该键合表面可以是半导体裸芯的裸芯键合垫、基板的接触垫、甚至是另一在先形成的球焊结构。
载有引线的劈刀然后可以移动到另一键合表面上，比如相邻半导体裸芯的下一个裸芯键合垫或者基板的接触垫，且劈刀下降且接触键合表面而将引线压扁，从而再次使用热、压力和超声能量形成引线键合。劈刀然后放出一小段引线并从键合表面拉断该引线。这样形成的键合被称为楔焊或缝焊。
附图说明
图1A、1B和1C分别是根据本技术的实施例的引线键合结构的示意性侧视图、俯视图和透视图。
图2A是根据本技术的实施例的瀑布引线键合工艺中所使用的引线键合装置的示意性侧视图。
图2B-2E是示出根据本技术的实施例在键合垫上键合的一段连续引线的示意性侧视图。
图3是示出根据本技术的实施例的包括两个半导体裸芯和基板的半导体装置的透视图，其采用瀑布引线键合电连接。
图4A-4E是示出根据本技术的实施例的电连接图3所示的半导体装置的瀑布引线键合工艺的侧视图。
图5是示出根据本技术的另一实施例的包括两个半导体裸芯和基板的半导体装置的透视图，其采用瀑布引线键合电连接。
图6是示出根据本技术的另一实施例的包括三个半导体裸芯和基板的半导体装置的透视图，其采用瀑布引线键合电连接。
具体实施方式
现将参考图1到6描述实施例，其涉及了瀑布引线键合结构以及具有瀑布引线键合结构的半导体装置与采用瀑布引线键合结构制造半导体装置的方法。可以理解本技术可以以许多不同的形式实现且不应解释为限于本文所阐述的实施例。而是，这些实施例被提供，使得本公开将是充分和完整的，且将本发明完全传递给本领域的技术人员。本技术旨在覆盖这些实施例的替换、修改和等同物，这些实施例被包括在由所附权利要求界定的本发明的范围和精神内。另外，在本技术的所附详细说明中，阐述了许多特定的细节，以提供本技术的完整理解。然而，对于本领域人员而言清楚的是，本技术可以在没有这样的特定细节的情况下被实现。
术语“顶”和“底”以及“上”和“下”在本文中仅为了方便和说明的目的而使用，且不旨在限制本技术的描述，而所指称的项目可以在位置上交换。
图1A、1B和1C分别显示了根据本技术的实施例的引线键合结构100的示意性侧视图、俯视图和透视图。引线键合结构100包括了其上形成有键合垫104的元件102以及键合在键合垫104的顶部上的一连续引线110。
元件102可以是半导体裸芯或基板。因此键合垫104可以是半导体裸芯上的半导体裸芯键合垫或基板上的接触垫，键合垫104的表面可以凹入元件102，如图1A所示。或者，键合垫104的表面可以基本与元件102的表面共面。基板可以包括印刷电路板(PCB)、引线框架、或者带载自动键合(TAB)。键合垫102包括金、铝或者镀金的铝。
如图1A所示，连续引线110可以被分为第一部112、第二部114和接触部116。第一部112用于连接键合垫104与第一电接触(未示出)，且第二部114用于连接键合垫104与第二电接触(未示出)。第一电接触和第二电接触可以是相邻半导体裸芯的裸芯键合垫、基板的接触垫、或在先形成的键合结构。如图1A所示，引线110的第一部112和第二部114具有基本均匀的直径的圆形横截面，该直径为在约12.7微米到约38.1微米的范围。例如，引线110的第一部112和第二部114的直径为约12.7微米、约15.2微米、约17.8微米、约20.3微米、约22.9微米、约25.4微米、约27.9微米、约30.5微米、约33.0微米、约35.6微米或约38.1微米。在第一部112和第二部114之间的引线110的接触部116与键合垫104相互扩散，由此该接触部116被键合在键合垫104的顶部上。接触部116具有扁平的形状，其厚度基本一致且小于第一部112和第二部114的直径。然而，需要将引线110的接触部116的厚度保持得足够大，从而改善引线110和键合垫104之间的键合强度，且减少由接触部116与第一部112和第二部114之间的应力集中所导致的缺陷(比如裂纹)的风险。例如，引线110的接触部116的厚度不小于5微米。接触部116可以在平行于键合垫104的基准面A(图1A中的水平面)上具有基本圆形的形状。接触部116的在该基准面A上的直径取决于键合垫104的键合垫开口(BPO)尺寸和形成接触部116的工艺参数。接触部116的直径在第一部112和第二部114的直径的1.2-2倍的范围。或者，接触部116在该基准面A上也可以具有其他的几何形状，比如椭圆形。
引线110的第一部112具有相对于与键合垫104平行的基准面A的30°至70°的倾斜角θ。第二部114具有相对于基准面A的45°至90°的倾斜角在该情形，引线110在第一部112和接触部116之间且在接触部116和第二部114之间分别弯折，如图1B所示。也可见，引线110的第一部112和引线110的第二部114在同一方向延伸，即在基准面A上引线110的第一部112的投影和在基准面A上引线110的第二部114的投影沿一直线。或者，引线110的第一部112和引线110的第二部114可以在不同方向上延伸。例如，在基准面A上，引线110的第二部114的投影可相对于引线110的第一部112的投影具有45°或更小的倾斜角α。
引线110可以为金线、铜线、钯线、银基合金线或钯镀铜线。引线110优选包括与键合垫104的键合表面的材料相同的材料，从而改善引线110和键合垫104之间的键合强度。例如，如果引线110为金线，则键合垫104优选为金或镀金的铝。引线键合结构100的进一步的细节将参考如下所述的瀑布引线键合工艺来讨论。
图2A-2E是示出根据本技术的实施例的形成图1A所示的引线键合结构100的瀑布引线键合工艺的示意性侧视图。图2A显示了在瀑布引线键合工艺中所使用的引线键合工具，被称为劈刀120。劈刀120具有针状形状且包括了造型的针头122(例如具有圆形的横截面形状)和供给引线110的中心管腔124。在瀑布引线键合工艺过程中，连续引线110被供给通过劈刀120。劈刀120还可以包括施加电流和超声能量的换能器(未显示)。
如图2B所示，键合垫104设置在元件102上。这可以如下实现。元件102的表面被遮掩并蚀刻，从而形成界定键合垫104的位置的凹陷。然后比如金或铝的导电材料通过涂布工艺沉积在该凹陷中，形成具有其顶表面低于元件102的表面或与元件102的表面共面的键合垫104。
接下来，如图2C所示，载有连续引线110的劈刀120以与将引线键合在设置于键合垫上的导电凸块上的引线键合工艺相比相对大的角度接近键合垫104的顶表面。由此，与在先的第一电接触(未显示)连接的引线110的第一部102未被劈刀变形，具有相对于基准面A相对大的角度θ，该基准面A平行于键合垫104。在键合垫104的表面低于元件102的表面的情形，这样的大的接近角度可以避免引线110在形成键合垫104的凹陷的上角接触元件102。第一部102相对于键合垫104的角度θ优选约为30°到70°。
如图2D所示，劈刀120可以被进一步降低，且在升温的条件下。用造型的针头122通过施加压力和超声能量而将引线110压靠在键合垫104的顶表面104上。
引线键合工艺的温度优选在约140℃-175℃的范围，更优选在约160℃。由于这样的低的工艺温度，由熔点温度大于1000℃的比如金线、铜线、钯线、银基合金线或钯镀铜线的引线110在瀑布引线键合工艺中也不熔化。而是，压力、热和超声波的综合作用使得引线110变形，通过引线110的接触部116和键合垫104的顶表面中的材料的相互扩散，形成了物理和电理键合。因此，接触部116具有垂直于键合垫104的基本均匀厚度，其小于引线110的第一部112和第二部114的直径。
由于引线110相对于键合垫104相对大的接近角度，由劈刀120的造型针头122施加的力的主要分量的方向垂直于键合垫103的顶表面。这样，可以增加有利于键合的有效力，由此对于瀑布引线键合工艺可以施加小的总力，这又可避免了对于键合垫104的潜在损伤，且减小了由于过大的力施加到键合垫104时可能产生比如陷口或裂纹的缺陷的风险。否则，上述的问题可能是严重的，这是因为在瀑布引线键合工艺中，引线110被直接键合到键合垫104上，而没有在键合垫104上设置导电凸块。该力优选为约15-35克力，更优选为约20克力。比较而言，在传统的键合工艺过程中施加的力可以超过40克力。另外，由于大的接近角度，接触部116可以在基准面A上产生对应于劈刀120的针头122的截面形状的基本圆形的形状，从而由劈刀120引起的应力可以更均匀地分布在键合垫104的键合表面。接触部116的在该基准面A上的直径取决于键合垫104的键合垫开口(BPO)尺寸和形成接触部116的工艺参数，比如力、超声能量等。在该情形，接触部116的直径在引线110的直径的1.2-2倍的范围。
另外，与传统的缝焊工艺不同，劈刀120的针头122不接触键合垫104的表面。因此在瀑布键合工艺的过程中，引线110保持了连续性，即引线110保持了连续的线状，而在键合过程中没有被劈刀120所施加的力压断或完全切断。
通过劈刀120的换能器施加的超声能优选为60-100mW的范围，更优选为80mW。超声能被施加以改善引线110和键合垫104中的材料的迁移率，从而在瀑布键合工艺中，即使在小的键合力和没有导电凸块的情况下，依然可以实现可靠的键合强度。
可以理解与传统的球焊或缝焊相比，在瀑布键合工艺过程中劈刀120的移动速度可以稍慢。例如，劈刀120的移动速度是传统的球焊或缝焊工艺所使用的速度的0.8至1倍。对于形成每个引线键合结构100，该键合工艺可能花费80一200毫秒，优选约100毫秒，从而平衡引线键合工艺的产能和可靠性。
如图2E所示，在引线键合结构100形成之后，劈刀120以相对大的角度从键合垫104的表面移出，从而再次避免引线110与元件102中的凹形(其用于键合垫104)的角部接触。在该情形，与第二电接触(未显示)连接的引线100的第二部114未被劈刀变形，且优选具有相对于平行于键合垫104的基准面A的约45°-90°的角度
根据本技术的上述的引线键合结构和瀑布引线键合工艺可以被应用于各种半导体装置以电连接半导体装置中的不同元件。这将在后面通过示例进一步说明。
图3是示出根据本技术的实施例的包括两个半导体裸芯和基板的半导体装置200的透视图，其采用根据本技术的瀑布引线键合电连接。如图3所示，半导体装置200包括第一半导体裸芯210、第二半导体裸芯220和基板230。第一半导体裸芯210包括了多个第一裸芯键合垫214，第二半导体裸芯220包括多个第二裸芯键合垫224，基板230包括多个接触垫234。第一半导体裸芯210、第二半导体裸芯220和基板230以偏移的结构顺序堆叠，从而分别暴露了第一半导体裸芯210的第一裸芯键合垫214、第二半导体裸芯220的第二裸芯键合垫224以及基板230的接触垫234。第二半导体裸芯220通过本技术的瀑布引线键合工艺电连接到第一半导体裸芯210和基板230。如图1A-1C所示的引线键合结构形成于每个第二裸芯键合垫224上，从而连续引线240可以从第一半导体裸芯210成瀑布状下落，且与第二裸芯键合垫224相互扩散，且连接对应的第一裸芯键合垫214、第二裸芯键合垫224和接触垫234。因此，该键合工艺被称为“瀑布键合工艺”。可以理解可以有比在图3中所示的那些更多的键合垫214、224、接触垫234以及键合引线240。
将参看图4A-4E，参考电连接半导体装置200的瀑布引线键合工艺更详细地讨论与半导体装置200相关的细节。
由引线材料(例如金线、铜线、钯线、银基合金线或钯镀铜线)制成的球形成在位于引线键合设备的基准位置的劈刀120的尖端，如图4A所示。
接下来，如图4B所示，劈刀120移动到第一半导体裸芯210的第一裸芯键合垫214且进行球焊。具体而言，劈刀120降下且将该球压靠第一裸芯键合垫214，同时由换能器施加超声能量。第一裸芯键合垫214还可以被加热以辅助键合。热、压力和超声能量的综合作用键合球和第一裸芯键合垫214。劈刀120然后拉起并离开第一裸芯键合垫214，而引线240通过劈刀120放出。
接下来，如图4C所示，劈刀120移动到第二裸芯键合垫224，且进行前述的瀑布引线键合工艺。由于瀑布引线键合工艺的大的接近角度，引线230的弧线高度H，也就是键合垫224与弯曲的引线240的最高点之间的垂直距离不小于75微米，而半导体裸芯的厚度为1-6微米。弯曲的引线240与裸芯210的间距至少需要大于引线240的直径，从而防止引线240与裸芯210接触。
接下来，如图4D所示，劈刀120连续放出引线240并移动到基板230的接触垫234。接着，如图4E所示，劈刀120通过缝焊将引线240直接键合到接触垫234上。
在使用上述的瀑布引线键合工艺电连接一行的裸芯键合垫和接触垫之后，劈刀120可以对于相邻的行以从顶半导体裸芯210下落到基板230的相同方式进行瀑布键合。上述的瀑布引线键合工艺可以对于半导体装置200中的半导体裸芯210、220的所有裸芯键合垫以及基板230的接触垫重复，从而形成如图3的透视图所示的半导体装置200。
可替代地，劈刀120也可以对于相邻的行以从底部的基板230到顶部的半导体裸芯210的相反方向进行瀑布键合。另外，可以理解对于所有的接触垫和裸芯键合垫，根据本技术的瀑布引线键合工艺也可以被反向施加，从而从底部的基板到上部的半导体裸芯顺序形成引线键合。半导体裸芯的键合垫的相邻行的键合顺序也可以根据具体的结构来进行调整。可以看到，在进行一行的裸芯键合垫和接触垫的电连接的过程中，引线240没有被切断，直到引线240与键合顺序中的最后一个部件键合，最后一个部件比如是基板上的接触垫或者是顶半导体裸芯上的裸芯键合垫。
虽然在图3所示的半导体装置200的引线240在上述的瀑布键合工艺中沿着一条直线，但是引线可以在瀑布键合工艺过程中从一个键合结构到另一键合结构时改变方向。图5为示出了包括两个半导体裸芯310、320和基板330的半导体装置300的透视图，其采用根据本技术的瀑布引线键合工艺电连接。如图5所示，连续引线340连接第一半导体裸芯310的左边第一个键合垫314与第二半导体裸芯320的左边第一个键合垫324，然后连接第二半导体裸芯320的左边第一个键合垫324与基板330的左边第二个接触垫334，从而改变了方向。在瀑布键合工艺过程中改变方向的能力可以在引线布局设计中提供灵活性。
上述的瀑布引线键合工艺还可以应用于包括多于两个半导体裸芯的半导体装置。例如，图6显示了包括三个半导体裸芯410、420、430和基板440的半导体装置400的透视图，其采用根据本技术的瀑布引线键合工艺电连接。如图6所示，连续引线450分别键合在第二半导体裸芯420的第二裸芯键合垫424上以及第三半导体裸芯430的第三裸芯键合垫434上。可以理解半导体装置可以包括其他数量的半导体裸芯。
使用本技术的瀑布引线键合电连接具有多个半导体裸芯的半导体装置与传统的球焊和缝焊的引线键合工艺相比，需要更少的步骤和制造时间。例如，在使用球焊或缝焊的传统引线键合工艺中，在每次进行引线键合之后，劈刀切断引线，且移回到基准点。与之不同，在瀑布引线键合中，劈刀采用连续的键合引线连续形成多个引线键合，而不切断引线且不需要将劈刀自引线键合设备的基准位置往复移动。由此，通过减小劈刀移动而节省制造时间。而且，在瀑布键合工艺中，在键合垫上没有设置导电凸块，因此节省了成本和制造时间。例如，对于具有2裸芯叠层、4裸芯叠层、8裸芯叠层和16裸芯叠层，UPH(每小时的单位数)分别改善了22％-40％、40％-55％、52％-61％以及59％-64％。
在上述的实施例中，在各半导体裸芯上的对应的裸芯键合垫之间形成了引线键合。如这里使用的，不同半导体裸芯上的“对应”裸芯键合垫指的是沿包括所述裸芯键合垫的裸芯的边缘彼此对准的不同半导体裸芯上的裸芯键合垫。由此，从图6的透视图，裸芯410、420和430的每个上的左边第一个裸芯键合垫彼此对应且引线键合在一起。裸芯410、420和430的每个的左边第二个的裸芯键合垫彼此对应且引线键合在一起。然而，在其他实施例中，也可以在各个裸芯的对角取向的裸芯键合垫之间进行上述的瀑布引线键合步骤。例如，在图6中，裸芯410的最左侧的裸芯键合垫可以根据上述的步骤引线键合到裸芯420的左边第二个裸芯键合垫。另外，在瀑布键合工艺过程中，引线不必沿同一方向，而可以改变方向，比如形成Z字形。
另外，虽然上述的实施例显示了相邻裸芯之间的引线键合，可以理解的是本技术可以被用于形成彼此不相邻的裸芯上的裸芯键合垫之间的引线键合。这样的引线键合可以形成于非相邻的裸芯上的对应裸芯键合垫之间，或者在非相邻的裸芯上的对角取向的裸芯键合垫之间。
在一个方面，本技术涉及一种半导体装置的引线键合结构。所述引线键合结构包括键合垫和连续引线。连续引线与键合垫相互扩散，所述引线将所述键合垫与第一电接触和第二电接触电连接，第二电接触与第一电接触不同。
在实施例中，连续引线具有第一部、第二部和接触部，所述第一部电连接所述键合垫和所述第一电接触，所述第二部电连接所述键合垫和所述第二电接触，所述接触部接触所述键合垫且与所述键合垫相互扩散。所述引线的接触部具有扁平形状，其具有基本均匀厚度，且所述引线的第一部和第二部具有直径大于所述接触部的厚度的线形。
在实施例中，所述引线的第一部和第二部的直径在约12.7微米到约38.1微米的范围。所述引线的接触部的厚度不小于5微米。所述引线的第一部具有相对于基准面约30°到70°的角度，所述引线的第二部具有相对于所述基准面约45°到90°的角度，所述基准面平行于所述键合垫。所述引线的第一部在所述基准面上的投影和所述引线的第二部在所述基准面上的投影不沿一直线。所述引线的接触部在上述基准面上具有基本圆形横截面形状。
在实施例中，所述键合垫包括金或铝。所述引线包括金线、铜线、钯线、银基合金线或钯镀铜线。所述第一电接触和第二电接触包括裸芯键合垫、接触垫、导电凸块或键合引线。
在另一个方面，本技术涉及一种半导体装置。所述半导体装置包括：第一半导体裸芯，包括第一裸芯键合垫；第二半导体裸芯，包括第二裸芯键合垫，所述第二半导体裸芯固定到所述第一半导体裸芯；元件，包括电接触，所述第二半导体裸芯固定到所述元件；以及连续引线，其与第二裸芯键合垫相互扩散，所述引线将所述第二半导体裸芯的第二裸芯键合垫与所述第一半导体裸芯的第一裸芯键合垫和所述元件的电接触电连接。
在实施例中，所述元件可以是基板且所述电接触是接触垫。所述基板包括印刷电路板(PCB)、引线框架和带载自动键合(TAB)。所述元件可以是第三半导体裸芯且所述电接触是第三裸芯键合垫。所述连续引线与上述第三裸芯键合垫相互扩散。所述连续引线具有第一部、第二部和接触部，所述第一部电连接所述键合垫和所述第一电接触，所述第二部电连接所述键合垫和所述第二电接触，所述接触部接触所述第二裸芯键合垫且与所述第二裸芯键合垫相互扩散。所述引线的接触部具有扁平形状，该扁平形状具有基本均匀厚度，且引线的第一部和第二部具有直径大于所述接触部的厚度的线形。
在实施例中，所述引线的第一部和第二部的直径在约12.7微米到约38.1微米的范围。所述引线的接触部的厚度不小于5微米。所述引线的第一部分具有相对于基准面约30°到70°的角度，所述引线的第二部分具有相对于所述基准面约45°到90°的角度，所述基准面平行于所述键合垫。所述引线的第一部在所述基准面上的投影和所述引线的第二部在所述基准面上的投影不沿一直线。所述引线的接触部在上述基准面上具有基本圆形横截面形状。
在另一个方面，本技术涉及一种在半导体装置的键合垫上形成引线键合结构的方法。所述方法包括：通过引线键合装置施加的力，将连续引线压靠在键合垫的顶表面，所述引线键合装置包括供给所述引线的中心腔；和在升高的温度相互扩散所述连续引线与所述键合垫的顶表面，由此将所述键合垫与第一电接触和第二电接触电连接，第二电接触与第一电接触不同。
在实施例中，所述力为约15-35克力。所述温度为约140-175℃。所述相互扩散所述连续引线与所述键合垫的顶表面的步骤中，施加约60-100mW的功率的超声能量。所述相互扩散所述连续引线与所述键合垫的顶表面的步骤进行大约80-200毫秒。所述相互扩散所述连续引线与所述键合垫的顶表面的步骤中，所述引线键合装置不接触所述键合垫的顶表面。
在另一个方面，本技术涉及一种制造半导体装置的方法。所述方法包括的步骤为：将一组半导体裸芯固定到基板上，所述半导体裸芯组包括顶半导体裸芯以及位于所述顶半导体裸芯和所述基板之间的一个或多个中间半导体裸芯，所述半导体裸芯组中的每个半导体裸芯包括裸芯键合垫，所述基板包括接触垫；通过引线键合装置施加的力，将连续引线压靠在中间半导体裸芯的键合垫的顶表面，引线键合装置包括供给所述引线的中心腔，并随后在升高的温度相互扩散所述连续引线与所述中间半导体裸芯的键合垫的顶表面，由此将所述中间半导体裸芯的键合垫与顶半导体裸芯的裸芯键合垫和所述基板的接触垫电连接。
本发明的前述详细说明为了图示和描述的目的呈现。其不旨在是穷尽的或将本发明限于所披露的准确形式。根据以上的教导，许多修改和变化是可能的。所描述的实施例被选择，从而最好地解释本发明的原理和其实际的应用，由此使得本领域的技术人员在各种实施例中最好地利用本发明且各种修改适于所考虑的具体用途。本发明的范围旨在由所附的权利要求所限定。

Claims (27)

1.一种引线键合结构，包括：
键合垫；和
连续引线，与键合垫相互扩散，所述引线将所述键合垫与第一电接触和第二电接触电连接，第二电接触与第一电接触不同，
其中所述连续引线具有第一部、第二部和接触部，所述第一部电连接所述键合垫和所述第一电接触，所述第二部电连接所述键合垫和所述第二电接触，所述接触部接触所述键合垫且与所述键合垫相互扩散,
所述引线的接触部在所述第一部和所述第二部之间延伸，并且在其长度方向上具有扁平形状，所述扁平形状具有基本均匀厚度，且所述引线的第一部和第二部具有线形，其直径大于所述接触部的厚度。
2.权利要求1所述的引线键合结构，其中所述引线的第一部和第二部的直径在约12.7微米到约38.1微米的范围。
3.权利要求2所述的引线键合结构，其中所述引线的接触部的厚度不小于5微米。
4.权利要求1所述的引线键合结构，其中所述引线的第一部分具有相对于基准面约30°到70°的角度，所述引线的第二部分具有相对于所述基准面约45°到90°的角度，所述基准面平行于所述键合垫。
5.权利要求4所述的引线键合结构，其中所述引线的第一部在所述基准面上的投影和所述引线的第二部在所述基准面上的投影不沿一直线。
6.权利要求4所述的引线键合结构，其中所述引线的接触部在上述基准面上具有基本圆形形状。
7.权利要求1所述的引线键合结构，其中所述键合垫包括金或铝。
8.权利要求1所述的引线键合结构，其中所述引线包括金线、铜线、钯线、银基合金线或钯镀铜线。
9.权利要求1所述的引线键合结构，其中所述第一电接触和第二电接触包括裸芯键合垫、接触垫、导电凸块或键合引线。
10.一种半导体装置，包括：
第一半导体裸芯，包括第一裸芯键合垫；
第二半导体裸芯，包括第二裸芯键合垫，所述第一半导体裸芯固定到所述第二半导体裸芯；
元件，包括电接触，所述第二半导体裸芯固定到所述元件；以及
连续引线，其与第二裸芯键合垫相互扩散，所述引线将所述第二半导体裸芯的第二裸芯键合垫与所述第一半导体裸芯的第一裸芯键合垫和所述元件的电接触电连接，
其中所述连续引线具有第一部、第二部和接触部，所述第一部电连接所述键合垫和所述第一电接触，所述第二部电连接所述键合垫和所述第二电接触，所述接触部接触所述第二裸芯键合垫且与所述第二裸芯键合垫相互扩散，
所述引线的接触部在所述第一部和所述第二部之间延伸，并且在其长度方向上具有扁平形状，所述扁平形状具有基本均匀厚度，且所述引线的第一部和第二部具有线形，其直径大于所述接触部的厚度。
11.权利要求10所述的半导体装置，其中所述元件是基板且所述电接触是接触垫。
12.权利要求11所述的引线键合结构，其中所述基板包括印刷电路板(PCB)、引线框架和带载自动键合(TAB)。
13.权利要求10所述的半导体装置，其中所述元件是第三半导体裸芯且所述电接触是第三裸芯键合垫。
14.权利要求13所述的半导体装置，其中所述连续引线与所述第三裸芯键合垫相互扩散。
15.权利要求10所述的半导体装置，其中所述引线的第一部和第二部的直径在约12.7微米到约38.1微米的范围。
16.权利要求10所述的半导体装置，其中所述引线的接触部的厚度不小于5微米。
17.权利要求10所述的半导体装置，其中所述引线的第一部分具有相对于基准面约30°到70°的角度，所述引线的第二部分具有相对于所述基准面约45°到90°的角度，所述基准面平行于所述键合垫。
18.权利要求17所述的半导体装置，其中所述引线的第一部在所述基准面上的投影和所述引线的第二部在所述基准面上的投影不沿一直线。
19.权利要求17所述的半导体装置，其中所述引线的接触部在所述基准面上具有基本圆形形状。
20.一种形成引线键合结构的方法，包括：
通过引线键合装置施加的力，将连续引线压靠在键合垫的顶表面，所述引线键合装置包括供给所述引线的中心腔；和
在升高的温度相互扩散所述连续引线与所述键合垫的顶表面，由此将所述键合垫与第一电接触和第二电接触电连接，第二电接触与第一电接触不同，
所述相互扩散所述连续引线与所述键合垫的顶表面的步骤中，所述相互扩散所述连续引线与所述键合垫的顶表面的步骤中，施加约60-100mW的功率的超声能量，所述相互扩散所述连续引线与所述键合垫的顶表面的步骤进行大约80-200毫秒。
21.权利要求20所述的方法，其中所述力为约15-35克力。
22.权利要求20所述的方法，其中所述温度为约140-175℃。
23.权利要求20的方法，其中所述相互扩散所述连续引线与所述键合垫的顶表面的步骤中，所述引线键合装置不接触所述键合垫的顶表面。
24.一种制造半导体装置的方法，包括的步骤为：
将一组半导体裸芯固定到基板上，所述半导体裸芯组包括顶半导体裸芯以及位于所述顶半导体裸芯和所述基板之间的一个或多个中间半导体裸芯，所述半导体裸芯组中的每个半导体裸芯包括裸芯键合垫，所述基板包括接触垫；
通过引线键合装置施加的力，将连续引线压靠在所述一个或多个中间半导体裸芯的键合垫的顶表面，所述引线键合装置包括供给所述引线的中心腔，并随后在升高的温度相互扩散所述连续引线与所述裸芯键合垫的顶表面，由此将所述一个或多个中间半导体裸芯的键合垫与顶半导体裸芯的裸芯键合垫和所述基板的接触垫电连接，
所述相互扩散所述连续引线与所述键合垫的顶表面的步骤中，施加约60-100mW的功率的超声能量，所述相互扩散所述连续引线与所述键合垫的顶表面的步骤进行大约80-200毫秒。
25.权利要求24所述的方法，其中所述力为约15-35克力。
26.权利要求24所述的方法，其中所述温度为约140-175℃。
27.权利要求24的方法，其中将所述连续引线压靠在所述键合垫的顶表面的步骤中，所述引线键合装置不接触所述键合垫的顶表面。
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EP2525403A1 (en) 2012-11-21
WO2012155345A1 (en) 2012-11-22
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KR20150122273A (ko) 2015-10-30
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