JP2014513870A - ウォータフォール・ワイヤボンディング - Google Patents
ウォータフォール・ワイヤボンディング Download PDFInfo
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- JP2014513870A JP2014513870A JP2014510631A JP2014510631A JP2014513870A JP 2014513870 A JP2014513870 A JP 2014513870A JP 2014510631 A JP2014510631 A JP 2014510631A JP 2014510631 A JP2014510631 A JP 2014510631A JP 2014513870 A JP2014513870 A JP 2014513870A
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- wire
- bonding pad
- bonding
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- semiconductor
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- 239000004065 semiconductor Substances 0.000 claims abstract description 123
- 238000000034 method Methods 0.000 claims description 62
- 239000000758 substrate Substances 0.000 claims description 38
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 238000003825 pressing Methods 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 description 5
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
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- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
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Abstract
【選択図】図1A
Description
Claims (35)
- ボンディングパッドと、
前記ボンディングパッドと相互に拡散する連続ワイヤであって、前記ボンディングパッドを、第1の電気接点と、前記第1の電気接点と異なる第2の電気接点とに電気的に接続する前記連続ワイヤと、
を備える、ワイヤボンディング構造。 - 前記連続ワイヤが、
前記ボンディングパッドを前記第1の電気接点と電気的に接続するための第1の部分と、
前記ボンディングパッドと接触し、前記ボンディングパッドと相互に拡散する接点部と、
前記ボンディングパッドを前記第2の電気接点と電気的に接続するための第2の部分と、
を有する、請求項1に記載のワイヤボンディング構造。 - 前記ワイヤの前記接点部は、実質的に均一な厚さを備えた平坦な形状を有し、
前記ワイヤの前記第1および前記第2の部分は、前記接点部の厚さより大きい直径を備えた線形状を有する、請求項2に記載のワイヤボンディング構造。 - 前記ワイヤの前記第1の部分および前記第2の部分の直径が、約12.7μm〜約38.1μmの範囲にある、請求項3に記載のワイヤボンディング構造。
- 前記ワイヤの前記接点部の前記厚さが5ミクロン以上である、請求項4に記載のワイヤボンディング構造。
- 前記ワイヤの前記第1の部分が、前記ボンディングパッドと平行な基準面に対して約30°〜70°の角度を有し、
前記ワイヤの前記第2の部分が、前記基準面に対して約45°〜90°の角度を有する、請求項3に記載のワイヤボンディング構造。 - 前記基準面上の前記ワイヤの前記第1の部分の突出部と、前記基準面上の前記ワイヤの前記第2の部分の突出部とが一直線に沿って存在していない、請求項6に記載のワイヤボンディング構造。
- 前記ワイヤの前記接点部が、前記基準面内で実質的に円の形状を有する、請求項6に記載のワイヤボンディング構造。
- 前記ボンディングパッドが、金またはアルミニウムを含む、請求項1に記載のワイヤボンディング構造。
- 前記ワイヤは、金線、銅線、パラジウム線、パラジウムメッキ銅線または銀ベース合金線を含む、請求項1に記載のワイヤボンディング構造。
- 前記第1および前記第2の電気接点は、ダイボンディングパッド、接続パッド、導電性バンプまたはボンディングワイヤを含む、請求項1に記載のワイヤボンディング構造。
- 第1のダイボンディングパッドを含む第1の半導体ダイと、
第2のダイボンディングパッドを含む第2の半導体ダイであって、前記第1の半導体ダイが取り付けられている第2の半導体ダイと、
電気接点を含む構成要素であって、前記第2の半導体ダイが取り付けられている構成要素と、
前記第2のボンディングパッドと相互に拡散する連続ワイヤであって、前記第2の半導体ダイの前記第2のダイボンディングパッドを、前記第1の半導体ダイの前記第1のダイボンディングパッドと前記構成要素の前記電気接点とに電気的に接続する連続ワイヤと、
を含む、半導体デバイス。 - 前記構成要素が基板であり、前記電気接点が接点パッドである、請求項12に記載の半導体デバイス。
- 前記基板は、プリント回路基板(PCB)、リードフレームおよびテープ自動ボンディング(TAB)テープを含む、請求項13に記載の半導体デバイス。
- 前記構成要素は第3の半導体ダイであり、前記電気接点が第3のダイボンディングパッドである、請求項12に記載の半導体デバイス。
- 前記連続ワイヤは、前記第3のダイボンディングパッドと相互に拡散している、請求項15に記載の半導体デバイス。
- 前記連続ワイヤが、
前記第2のダイボンディングパッドを前記第1のダイボンディングパッドと電気的に接続するための第1の部分と、
前記第2のダイボンディングパッドと接触し、前記第2のダイボンディングパッドと相互に拡散する接点部と、
前記第2のダイボンディングパッドを前記電気接点と電気的に接続するための第2の部分と、
を有する、請求項12に記載の半導体デバイス。 - 前記ワイヤの前記接点部は、実質的に均一な厚さを備えた平坦な形状を有し、
前記ワイヤの前記第1および前記第2の部分は、前記接点部の厚さより大きい直径を備えた線形状を有する、請求項17に記載の半導体デバイス。 - 前記ワイヤの前記第1の部分および前記第2の部分の直径が、約12.7μm〜約38.1μmの範囲にある、請求項18に記載の半導体デバイス。
- 前記ワイヤの前記接点部の前記厚さが5ミクロン以上である、請求項18に記載の半導体デバイス。
- 前記ワイヤの前記第1の部分が、前記第2のボンディングパッドと平行な基準面に対して約30°〜70°の角度を有し、
前記ワイヤの前記第2の部分が、前記基準面に対して約45°〜90°の角度を有する、請求項18に記載の半導体デバイス。 - 前記基準面上の前記ワイヤの前記第1の部分の突出部と、前記基準面上の前記ワイヤの前記第2の部分の突出部とが一直線に沿って存在していない、請求項21に記載の半導体デバイス。
- 前記ワイヤの前記接点部が、前記基準面内で実質的に円の形状を有する、請求項21に記載の半導体デバイス。
- 連続ワイヤを送る中央空洞を備えるワイヤボンディング装置によって加えられた力で、ボンディングパッドの頂面に対して前記ワイヤを押圧するステップと、
高い温度で前記連続ワイヤを前記ボンディングパッドの前記頂面と相互に拡散させることによって、前記ボンディングパッドを、第1の電気接点と、前記第1の電気接点と異なる第2の電気接点とに電気的に接続するステップと、
を備える、ワイヤボンディング構造を形成する方法。 - 前記力が約15〜35グラム重量である、請求項24に記載の方法。
- 前記温度が約140〜175℃である、請求項24に記載の方法。
- 前記連続ワイヤを前記ボンディングパッドの前記頂面と相互に拡散させる前記ステップ中に、約60〜100mWのパワーの超音波エネルギーを印加する、請求項24に記載の方法。
- 前記連続ワイヤを前記ボンディングパッドの前記頂面と相互に拡散させる前記ステップが、約80〜200ミリ秒を要する、請求項24に記載の方法。
- ボンディングパッドの頂面に対して連続ワイヤを押圧する前記ステップ中に、前記ワイヤボンディング装置が前記ボンディングパッドの前記頂面に接触しない、請求項24に記載の方法。
- 頂部半導体ダイ、および、前記頂部半導体ダイと前記基板との間の1つまたは複数の中間半導体ダイを含んだ半導体ダイ群を、基板に取り付けるステップと、
前記半導体ダイ群内の半導体ダイの各々はダイボンディングパッドを含んでおり、
前記基板は接点パッドを含んでおり、
連続ワイヤを送る中央空洞を含むワイヤボンディング装置によって加えられた力で、前記1つまたは複数の中間半導体ダイのボンディングパッドの頂面に対して前記ワイヤを押圧し、続いて高い温度で前記連続ワイヤを前記ダイボンディングパッドの前記頂面上で相互に拡散させることにより、前記頂部半導体ダイの前記ダイボンディングパッドを、前記1つまたは複数の中間半導体ダイの前記ダイボンディングパッドの前記頂面、および、前記基板の前記接点パッドに電気的に接続するステップと、
を備える、半導体デバイスを製造する方法。 - 前記力が約15〜35グラム重量である、請求項30に記載の方法。
- 前記温度が約140〜175℃である、請求項30に記載の方法。
- 前記連続ワイヤを前記ボンディングパッドの前記頂面と相互に拡散させる前記ステップ中に、約60〜100mWのパワーの超音波エネルギーを印加する、請求項30に記載の方法。
- 前記連続ワイヤを前記ボンディングパッドの前記頂面と相互に拡散させる前記ステップが、約80〜200ミリ秒を要する、請求項30に記載の方法。
- ボンディングパッドの頂面に対して連続ワイヤを押圧する前記ステップ中に、前記ワイヤボンディング装置が前記ボンディングパッドの前記頂面に接触しない、請求項30に記載の方法。
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CN103155143A (zh) | 2013-06-12 |
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