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Lee et al., 2010 - Google Patents

Regrowth of semipolar GaN on nanoporous GaN template by metal organic chemical vapor deposition

Lee et al., 2010

Document ID
18101770904246063815
Author
Lee D
Jang J
Kong B
Cho H
Nam O
Publication year
Publication venue
Japanese Journal of Applied Physics

External Links

Snippet

A nanoporous semipolar GaN template has been fabricated by photoenhanced electrochemical etching to obtain porous GaN with nanoscale pores. The surface morphology of regrown semipolar GaN on a nanoporous GaN template was enhanced by …
Continue reading at iopscience.iop.org (other versions)

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
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    • C30B29/10—Inorganic compounds or compositions
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