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Caliebe et al., 2015 - Google Patents

Effects of miscut of prestructured sapphire substrates and MOVPE growth conditions on (112¯ 2) oriented GaN

Caliebe et al., 2015

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Document ID
16001053145488838780
Author
Caliebe M
Meisch T
Madel M
Scholz F
Publication year
Publication venue
Journal of Crystal Growth

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Snippet

In this work, the influence of sapphire mis-orientation on the quality of coalesced (11 2¯ 2) GaN layers grown on r-plane prestructured sapphire substrates (r-PSS) is investigated. It was found that the angle of the GaN (11 2¯ 2) plane towards the surface plane of the …
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