Yoo et al., 2011 - Google Patents
A nonpolar a-plane GaN grown on a hemispherical patterned r-plane sapphire substrateYoo et al., 2011
- Document ID
- 16571809998675470089
- Author
- Yoo G
- Park H
- Lim H
- Lee S
- Nam O
- Moon Y
- Lim C
- Kong B
- Cho H
- Publication year
- Publication venue
- Japanese Journal of Applied Physics
External Links
Snippet
A high-quality a-plane GaN layer with a pit-free, mirror-like surface was grown on a hemispherical patterned r-plane sapphire substrate (PSS) by metal–organic chemical vapor deposition. The use of the r-plane PSS reduced the density of defects such as basal plane …
- 229910002601 GaN 0 title abstract description 56
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
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