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Khan et al., 2023 - Google Patents

Selective-area growth of GaN and AlGaN nanowires on N-polar GaN templates with 4° miscut by plasma-assisted molecular beam epitaxy

Khan et al., 2023

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Document ID
12117627930861163577
Author
Khan K
Jian Z
Li J
Sun K
Ahmadi E
Publication year
Publication venue
Journal of Crystal Growth

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Snippet

In this study, selective area growth (SAG) s of AlGaN/GaN nanowires (NWs) on miscut N- polar GaN templates were studied and compared with that grown on Ga-polar templates using plasma-assisted molecular beam epitaxy (MBE). The SAG of N-polar AlGaN/GaN NWs …
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