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Ling et al., 2010 - Google Patents

Crystal quality improvement of a-plane GaN using epitaxial lateral overgrowth on nanorods

Ling et al., 2010

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Document ID
12112087978122101021
Author
Ling S
Chao C
Chen J
Liu P
Ko T
Lu T
Kuo H
Wang S
Cheng S
Tsay J
Publication year
Publication venue
Journal of crystal growth

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Snippet

The crystal quality of a-plane GaN films was improved by using epitaxial lateral overgrowth on nano-rod GaN template. The scanning electron microscope images showed the fully coalesced regrowth process completed within only 2μm thickness. The a-plane GaN films …
Continue reading at ir.lib.nycu.edu.tw (PDF) (other versions)

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